Chapter 11 Alternating-Current Power the Text for the Theory Portion of This Chapter Was Written by Ken Stuart, W3VVN
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ME430 Mechatronics Lab 2: Transistors, H-Bridges, and Motors
Name ____________________________________ Name ____________________________________ ME430 Mechatronics Lab 2: Transistors, H‐Bridges, and motors The lab team has demonstrated: Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate ______________ Sourcing Current ______________ Sinking Current Part (B) Driving DC Motors using Logic Gates and Transistors ______________ NPN BJT transistor ______________ N‐channel MOSFET transistor ______________ Darlington Chip (ULN2003) Part (C) Using 12 Volt Power Supplies to Drive Lamps and Fans ______________ MOSFETs ______________ BJTs ______________ Darlingtons Part (D) Using a Darlington to drive multiple LEDs ______________ Dancing lights Part (E) Bi‐directional Control of Motors with H‐Bridge chips ______________ DC Motor with bi‐directional 5V drive circuit ______________ Linear actuator DC motor with bi‐directional 12V drive circuit ______________ Stepper Motor at 5V with 2 sets of bi‐directional phases ME430 Mechatronics: Lab 2 1 Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate In the “Intro to Transistors” video lecture, you also learned about sourcing and sinking current from a logic gate. Sinking the current allows much higher current levels. In this part we would like to build the two configurations and verify that they work. (1) Sourcing Current First, rebuild the simple current sourcing circuit you built for the beginning of Lab 1. Make sure that one works before you move on. Recall that it looks like We would like to modify the circuit to also drive (by sourcing the current from the 7404) a DC (brushed) motor. These are the ordinary‐looking silver‐grey motors. -
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO ...................................................... 60V Collector−Base Voltage, VCB ......................................................... 60V Emitter−Base Voltage, VEB ........................................................... 5V Collector Current, IC Continuous ................................................................... 4A Peak ........................................................................ 8A Base Current, IB ................................................................. 80mA Total Power Dissipation (TC = +25C), PD ............................................ 50W Derate Above 25C..................................................... 0.286W/C Operating Junction Temperature Range, TJ ..................................−65 to +200C Storage Temperature Range, Tstg ..........................................−65 to +200C Thermal Resistance, Junction−to−Case, RthJC ..................................... 3.5C/W Electrical Characteristics: (TC = +25C unless -
Precision Voltage-To-Current Converter/Transmitter Xtr110
XTR110 SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS G 4mA TO 20mA TRANSMITTER INDUSTRIAL PROCESS CONTROL G SELECTABLE INPUT/OUTPUT RANGES: G PRESSURE/TEMPERATURE TRANSMITTERS 0V to +5V, 0V to +10V Inputs G CURRENT-MODE BRIDGE EXCITATION 0mA to 20mA, 5mA to 25mA Outputs G GROUNDED TRANSDUCER CIRCUITS Other Ranges G CURRENT SOURCE REFERENCE FOR DATA G 0.005% MAX NONLINEARITY, 14 BIT ACQUISITION G PRECISION +10V REFERENCE OUTPUT G PROGRAMMABLE CURRENT SOURCE FOR G SINGLE-SUPPLY OPERATION TEST EQUIPMENT G WIDE SUPPLY RANGE: 13.5V to 40V G POWER PLANT/ENERGY SYSTEM MONITORING DESCRIPTION The XTR110 is a precision voltage-to-current converter designed for analog signal transmission. It accepts inputs V Force 15 16 +V of 0 to 5V or 0 to 10V and can be connected for outputs of REF CC R9 V Sense 12 +10V 1 Source 4mA to 20mA, 0mA to 20mA, 5mA to 25mA, and many other REF R Reference 8 Resistor commonly used ranges. V Adjust 11 13 Source REF Sense A precision on-chip metal film resistor network provides input Gate V (10V) 4 A 14 scaling and current offsetting. An internal 10V voltage refer- IN1 2 Drive V In 3 7 ence can be used to drive external circuitry. REF R1 Offset (zero) R3 R The XTR110 is available in 16-pin plastic DIP, ceramic DIP 5 6 Adjust and SOL-16 surface-mount packages. Commercial and in- R 4 A1 dustrial temperature range models are available. R2 Span 8 Adjust R7 V (5V) 5 10 4mA IN2 Span R6 Common 2 9 16mA Span Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. -
ULN2803A Darlington Transistor Arrays Datasheet
Product Order Technical Tools & Support & Folder Now Documents Software Community ULN2803A SLRS049H –FEBRUARY 1997–REVISED FEBRUARY 2017 ULN2803A Darlington Transistor Arrays 1 Features 3 Description The ULN2803A device is a 50 V, 500 mA Darlington 1• 500-mA-Rated Collector Current (Single Output) transistor array. The device consists of eight NPN Darlington pairs that feature high-voltage outputs with • High-Voltage Outputs: 50 V common-cathode clamp diodes for switching • Output Clamp Diodes inductive loads. The collector-current rating of each • Inputs Compatible With Various Types of Logic Darlington pair is 500 mA. The Darlington pairs may be connected in parallel for higher current capability. 2 Applications Applications include relay drivers, hammer drivers, • Relay Drivers lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. The • Hammer Drivers ULN2803A device has a 2.7-kΩ series base resistor • Lamp Drivers for each Darlington pair for operation directly with • Display Drivers (LED and Gas Discharge) TTL or 5-V CMOS devices. • Line Drivers Device Information(1) • Logic Buffers PART NUMBER PACKAGE BODY SIZE (NOM) • Stepper Motors ULN2803ADW SOIC (18) 11.55 mm × 7.50 mm • IP Camera (1) For all available packages, see the orderable addendum at • HVAC Valve and LED Dot Matrix the end of the data sheet. Logic Diagram 1 18 1B 1C 2 17 2B 2C 3 16 3B 3C 4 15 4B 4C 5 14 5B 5C 6 13 6B 6C 7 12 7B 7C 8 11 8B 8C 10 COM 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. -
Optoisolators Transistors
TRANSISTORS TRANSISTORS CAT# Description Price 100 2N2222A NPN, TO-18 2 for $1.50 .60 2N2906 PNP, TO-18 2 for $1.00 .35 PN2907 PNP, TO-92 5 for .75 .10 2N3055 NPN, TO-3 $2.35 each 2.00 TO-18 TO-92 TO-202 TO-218 TO-220 TO-3 2N3904 NPN, TO-92 5 for .75 .13 2N3906 PNP, TO-92 5 for .75 .13 TRIAC 2N4124 NPN, TO-92 5 for .75 .13 2N4400 NPN, TO-92 5 for .50 .08 CAT# AMP VOLT CASE Each 10 2N4401 NPN, TO-92 5 for .75 .13 Q6025P 25 600 TO-3 base 3.00 2.50 2N4403 PNP, TO-92 10 for .80 .05 2N5401 PNP, TO-92 .25 each .20 SCR 2N5416 PNP, TO-39 $1.95 each 2SC2352 NPN, TO-92 3 for 1.00 .29 8A 200V TO-202 SCR. 200 uA gate current. 2SC3457 NPN, TO-220 .65 each .50 CAT# S306B1 45¢ each • 10 for 40¢ each 2SC5511 NPN, TO-220 .95 each .75 BC556B PNP, TO-92 5 for $1.00 Gate sensitive SCR, Teccor T106F41. D33D30 NPN, TO-92 5 for $1.00 .16 Off-state voltage: 50V. Gate trigger, D45H5 PNP, TO-220 .75 each .65 Gate: 200uA 3-pin DIP package. KSP8599 PNP, TO-92 5 for .50 .08 CAT# T106F41 2 for $1.00 MJL1302A PNP, TO-264 $3.00 each MPS8599 PNP, TO-92 5 for .50 .08 N-CHANNEL J-FET PN2222A NPN, TO-92 5 for .80 .15 TIP31C NPN, 3A 100V, TO220 .45 each .35 30V 350MW. -
Operator Manual
OPERATOR MANUAL , , , " FOR MODELS HTR 1005B·18 . HTR 1005B·1 E8 HTR 1005B·1J8 HUNTRON INSTRUMENTS. INC.• 15123 Hwy. 99 North. Lynnwood. WA 98037. (800)426-9265 • (206)743-3171 • Telex 152951 TABLE OF CONTENTS SECTION 1 - GENERAL INFORMATION 1.1 ABOUT THIS MANUAL 1.2 TRACKER DESCRIPTION , 1-1 1.3 PRINCIPLES OF TRACKER OPERATION , 1-3 1.3,1 Tracker Test Signal ,, ,, 1-3 1.3.2 Horizontal and Vertical Deflection of the Display " , 1-3 1.3.3 Short and Open Circuit Displays .",' , , 1-4 SECTION 2 - TRACKER OPERATION 2.1 GENERAL , ,,, 2-1 2.2 CONTROLS AND INDICATORS , .. ,., , 2-1 2.3 ALTERNATE MODE OPERATION , 2-3 2.4 FUSE REPLACEMENT ,', ' 2-3 SECTION 3 - TESTING DIODES 3.1 THE SEMICONDUCTOR DIODE AND ITS CHARACTERISTICS 3-1 3.1.1 Diode Symbol and Definition ., , , 3-1 3.1.2 The Volt-Ampere Characteristic , , , 3-2 3.2 SILICON RECTIFIER DIODES. , ,, 3-2 3.2.1 Patterns ofa Good Diode 3-2 3.2.2 Patterns ofa Defective Diode ," 3-3 3.3 HIGH VOLTAGE SILICON DIODES , , 3-3 3.4 RECTIFIER BRIDGES ,, 3-5 3.5 LIGHT-EMITTING DIODES 3-8 3.6 ZENER DIODES 3-8 SECTION 4 - TESTING TRANSISTORS 4.1 BIPOLAR JUNCTION TRANSISTORS ,,,,,,,, ,, 4-1 4,2 NPN BIPOLAR TRANSISTORS ,., .. , , 4-1 4,2.1 B-E Junction Testing ,' ,, "., '" ' 4-2 4.2.2 C-E Connection Testing , , 4-2 4.2.3 C-B Junction Testing , ,., 4-3 4.3 PNP BIPOLAR TRANSISTORS ,, , 4-4 4.4 POWER TRANSISTORS - NPN OR PNP 4-5 4.5 DARLINGTON TRANSISTORS ., ,., ',.,., 4-5 4.6 JFET TRANSISTORS ,, 4-8 4.7 MOSFET TRANSISTORS , ,,,,,.,',,,.,, 4-9 4.7. -
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of http://onsemi.com industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA PDIP−16 P SUFFIX permit them to drive incandescent lamps. CASE 648 The MC1413, B with a 2.7 kW series input resistor is well suited for 16 systems utilizing a 5.0 V TTL or CMOS Logic. 1 Features SOIC−16 • Pb−Free Packages are Available* D SUFFIX 16 CASE 751B • NCV Prefix for Automotive and Other Applications Requiring Site 1 and Control Changes 1/7 MC1413, B ORDERING INFORMATION † 2.7 k Pin 9 Device Package Shipping MC1413D SOIC−16 48 Units/Rail 5.0 k MC1413DG SOIC−16 48 Units/Tube 3.0 k (Pb−Free) MC1413DR2 SOIC−16 2500 Tape & Reel MC1413DR2G SOIC−16 2500 Tape & Reel (Pb−Free) Figure 1. Representative Schematic Diagram MC1413P PDIP−16 25 Units/Rail MC1413PG PDIP−16 25 Units/Rail (Pb−Free) 1 16 MC1413BD SOIC−16 48 Units/Rail MC1413BDG SOIC−16 48 Units/Rail 2 15 (Pb−Free) MC1413BDR2 SOIC−16 2500 Tape & Reel 3 14 MC1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) 4 13 MC1413BP PDIP−16 25 Units/Rail MC1413BPG PDIP−16 25 Units/Rail 5 12 (Pb−Free) NCV1413BDR2 SOIC−16 2500 Tape & Reel 6 11 NCV1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) 7 10 †For information on tape and reel specifications, including part orientation and tape sizes, please 8 9 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. -
TRANSISTORS N-CHANNEL MOSFETS, SURFACE MOUNT IRF540NS 100V, 33A, 44M Ohms
TRANSISTORS N-CHANNEL MOSFETS, SURFACE MOUNT IRF540NS 100V, 33A, 44M Ohms. CAT# IRF540NS 95¢ each 10 for 85¢ each • 100 for 70¢ each TO-18 TO-92 TO-218 TO-220 TO-3 RF1S640 18A, 200V, 0.180 Ohm CAT# RF1S640 65¢ each TRIAC 10 for 60¢ each • 100 for 45¢ each CAT# AMP VOLT CASE Each 10 900v. TO-263. MAC223A8 25 600 TO-220 1.85 1.75 IRFBF20S Q6015L5 15 600 TO-220 1.60 1.40 CAT# IRFBF20S 60¢ each Q6025P 25 600 TO-3 base 5.50 5.15 BUK92150-55A. 55V, 11A, 36W, 97m Ohm. CAT# BUK92150 4 for $1.00 N-CHANNEL J-FET 100 for 19¢ each 30V 350MW. TO-92 package. CAT# 2N5638 5 for $1.00 • 100 for 15¢ ea. TRANSISTORS CAT# Description Price 100 N-CHANNEL MOSFETS, TO-220 D33D30 NPN, TO-92 5 for $1.00 .16 D45H5 PNP, TO-220 .75 each .65 BUZ11A 26 Amp, 50 Volt, 0.055 Ohms. PN2222A NPN, TO-92 5 for .80 .15 With right-angle pre-formed leads. 2N2222A NPN, TO-18 2 for 1.00 .40 2N2906 PNP, TO-18 2 for $1.00 .35 CAT# BUZ11A 75¢ each PN2907 PNP, TO-92 5 for .75 .10 10 for 65¢ each 100 for 55¢ each MJE2955T PNP, TO-220 .65 each MJE3055T NPN, TO-220 .65 each BUZ71A ST Micro. 50V, < 0.12 Ohms , 13 A. 2N3055 NPN, TO-3 $1.25 each .95 CAT# BUZ71A 75¢ each 2N3904 NPN, TO-92 5 for .75 .13 10 for 65¢ each • 100 for 53¢ each 2N3906 PNP, TO-92 5 for .75 .13 2N4124 NPN, TO-92 5 for .75 .13 2N4400 NPN, TO-92 5 for .50 .08 IRF734 1.2 Ohms (max.). -
Linear Voltage Regulators
Linear Voltage Regulators LINEAR VOLTAGE REGULATORS INTRODUCTION Block Diagram of Linear Voltage Regulator UNREGULA TED V = V (1+R /R ) INPUT OUT REF F E ERROR AMP I I OA B POWER where VREF is a temterature VOLTAGE stabilised reference voltage. REFERENCE TRANSISTOR I T IL max = VSEN max/RSEN I L where VSEN max is set by either CURRENT and TEMPERA TURE TJmax or by the absolute RSEN SENSING maximum current, whichever is R smaller. I E L O RE RF G U L U T O/P VOLTAGE SENSING O L - V + P F A A U D T T E D Discrete Voltage Regulator UNREGULATED INPUT D 0,1 µF S LF351 2N5337 10k 110V 2N3055 7,5V 60Hz 500 mW 47 to 1000 pF 0,1 µF 1k CFIL TO CI RCUI T 2N2222 GR OU N D I L RSEN R RF E G O U L + U T RE O L 0,1 µF Vout A A P D - T U E T SEPA RA TE GROUND FOR LOA D I L D Discrete voltage regulators generally provide much better performance than IC regulators because the op amp used has more gain and because the power transistor does not heat up the rest of the circuit. For most applications, IC regulators perform very satisfactorily. -1- Linear Voltage Regulators EFFICIENCY OF LINEAR REGULATORS Linear regulators are easier to design and generally less expensive but waste more power because the power elements (transistors) operate in their active or linear mode. Switching regulators are more complex and more difficult to design but are more power efficient because their power elements (transistors) are switched ON and OFF alternately and consume very little power. -
Darlington Class Ab Pushpull Amplifier
© 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company DARLINGTON CLASS AB PUSHPULL AMPLIFIER • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Push Pull Amplifier When an amplifier is biased at cutoff so that it operates in the linear region for 180 degree of the input cycle and is in cutoff for 180 degree, it is a class B amplifier. Class AB amplifiers are biased to conduct for slightly more than 180 degree. The primary advantage of a class B or class AB amplifier over a class A amplifier is that either one is more efficient than a class A amplifier; you can get more output power for a given amount of input power. A disadvantage of class B or class AB is that it is more difficult to implement the circuit in order to get a linear reproduction of the input waveform. The term push-pull refers to a common type of class B or class AB amplifier circuit in which two transistors are used on alternating half- cycles to reproduce the input waveform at the output. • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Darlington Push Pull Amplifier The complementary Darlington, also known as the Sziklai pair, it is similar to the traditional Darlington pair except it uses complementary transistors (one npn and one pnp). The complementary Darlington is used when it is determined that output power transistors of the same type should be used (both npn or both pnp). Class AB push-pull amplifier consists of two npn output power transistors, The upper part of the push-pull configuration is a traditional Darlington, and the lower part is a complementary Darlington. -
National Semiconductor Voltage Regulator Handbook 1980
CD 09O VOLTAGE REGULATOR HANDBOOK NATIONAL SEMICONDUCTOR 37 Loverock Road Reading Berkshire RG3 1ED Telephone (0734) 585171 Telex 848370 Celdis Electronic Distributed Speddisto Art ive Components I>ivi*k>n HW VOLTAGE REGULATOR HANDBOOK NATIONAL SEMICONDUCTOR Contributors: Nello Sevastopoulos Jim Sherwin Dennis Bonn George Cleveland James E. Solomon 'National Semiconductor Corporation 2900 Semiconductor Drive, Santa Clara, CalHornla 96051 [4M| 737-5000(TWX (910) 339-92J0 dmertWd: Hatloijl aoafl not «Burri* iny [•itmnslbHlny lor uta at my circuitry »ny no elrsuM pit*nl lictnut *r* implied, «no Nit>snil reimnS the fin.ni. si Sitm wiihaul nolie* to Ch*rv|}t »«> clrcuilry. nw Table of Contents 1.0 Introduction ...... ,,,......,..,, 1-1 1.1 How to Use this Book ., , 1-1 1.2 Features of On-Card Regulation 1-1 1.3 Fixed Voltage 3-Terminal Regulator Description 1-4 1.4 Comparison, Fixed Voltage 3-Terminal vs Variable Voltage Regulators by Application 1-4 2.0 Data Sheet Summary 2*1 3.0 Product Selection Procedures . .3-1 4.0 Heat Flow & Thermal Resistance .4-1 5.0 Selection of Commercial Heat Sink 5-1 6.0 Custom Heat Sink Design ,6-1 7.0 Applications Circuits and Descriptive Information 7-1 7.1 Positive Regulators .7-1 7.2 Negative Regulators 7-5 7.3 Dual Tracking Regulators 7-6 7.4 Adjustable Voltage Regulators 7-20 7.5 Automotive Applications 7*32 8.0 Power Supply Design 8-1 8.1 Scope , ,. , 8-1 8.2 Capacitor Selection 8-4 8.3 Diode Selection 8-4 9.0 Appendix , . -
2N3055 Datasheet Pdf
2n3055 Datasheet Pdf 1 / 6 2n3055 Datasheet Pdf 2 / 6 3 / 6 Maximum Ratings[edit]The maximum collector-to-emitter voltage for the 2N3055, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with 100 ohms a 70 volt breakdown rating, VCER, and the Collector-Emitter Sustaining voltage, VCEO(sus), is given by ON Semiconductor. 1. datasheet 2. datasheet view access 3. datasheet view 2N3055 SILICON NPN TRANSISTOR SGS-THOMSONPREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in JedecTO-3 metalcase.. 1Specifications2HistorySpecifications[edit]The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mid-1970s the fT could be as low as 0.. 5 MHzPackaged in a TO-3 case style, it is a 15 amp, 60 volt (or more, see below), 115 watt power transistor with a β (forward current gain) of 20 to 70 at a collector current of 4 A (this may be 100 to 200 when testing using a multimeter[6]).. INTERNAL SCHEMATIC DIAGRAM October1995 ABSOLUTE MAXIMUM RATINGS Symbol 21 rows 2N3055 Datasheet, 2N3055 PDF, 2N3055 Data sheet, 2N3055 manual, 2N3055 pdf, 2N3055. datasheet datasheet, datasheet or data sheet, datasheet bc548, datasheet atmega328p, datasheet arduino uno, datasheet 1n4007, datasheetcatalog, datasheet esp32, datasheet lm317, datasheet lm358, datasheet view, datasheet pdf, datasheet view access, datasheet meaning, datasheets for datasets, datasheet 360 3utools Latest Version Download For Windows 7 32 Bit [1] Its numbering follows the JEDEC standard [2] It is a transistor type of enduring popularity.