DOCSLIB.ORG

TRANSISTORS N-CHANNEL MOSFETS, SURFACE MOUNT IRF540NS 100V, 33A, 44M Ohms

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
TRANSISTORS N-CHANNEL MOSFETS, SURFACE MOUNT IRF540NS 100V, 33A, 44M Ohms TRANSISTORS N-CHANNEL MOSFETS, SURFACE MOUNT IRF540NS 100V, 33A, 44M Ohms. CAT# IRF540NS 95¢ each 10 for 85¢ each • 100 for 70¢ each TO-18 TO-92 TO-218 TO-220 TO-3 RF1S640 18A, 200V, 0.180 Ohm CAT# RF1S640 65¢ each TRIAC 10 for 60¢ each • 100 for 45¢ each CAT# AMP VOLT CASE Each 10 900v. TO-263. MAC223A8 25 600 TO-220 1.85 1.75 IRFBF20S Q6015L5 15 600 TO-220 1.60 1.40 CAT# IRFBF20S 60¢ each Q6025P 25 600 TO-3 base 5.50 5.15 BUK92150-55A. 55V, 11A, 36W, 97m Ohm. CAT# BUK92150 4 for $1.00 N-CHANNEL J-FET 100 for 19¢ each 30V 350MW. TO-92 package. CAT# 2N5638 5 for $1.00 • 100 for 15¢ ea. TRANSISTORS CAT# Description Price 100 N-CHANNEL MOSFETS, TO-220 D33D30 NPN, TO-92 5 for $1.00 .16 D45H5 PNP, TO-220 .75 each .65 BUZ11A 26 Amp, 50 Volt, 0.055 Ohms. PN2222A NPN, TO-92 5 for .80 .15 With right-angle pre-formed leads. 2N2222A NPN, TO-18 2 for 1.00 .40 2N2906 PNP, TO-18 2 for $1.00 .35 CAT# BUZ11A 75¢ each PN2907 PNP, TO-92 5 for .75 .10 10 for 65¢ each 100 for 55¢ each MJE2955T PNP, TO-220 .65 each MJE3055T NPN, TO-220 .65 each BUZ71A ST Micro. 50V, < 0.12 Ohms , 13 A. 2N3055 NPN, TO-3 $1.25 each .95 CAT# BUZ71A 75¢ each 2N3904 NPN, TO-92 5 for .75 .13 10 for 65¢ each • 100 for 53¢ each 2N3906 PNP, TO-92 5 for .75 .13 2N4124 NPN, TO-92 5 for .75 .13 2N4400 NPN, TO-92 5 for .50 .08 IRF734 1.2 Ohms (max.). 450 V (min.). 4.9 A (max.). 62 deg C. 2N4401 NPN, TO-92 5 for .75 .13 2N4403 PNP, TO-92 10 for .80 .05 CAT# IRF734 65¢ each 2N5401 PNP, TO-92 .25 each .20 10 for 55¢ each • 100 for 45¢ each 2SC2352 NPN, TO-92 3 for 1.00 .29 2SC3457 NPN, TO-220 .65 each .50 IRFZ40 50 Amp 50 Volt 2SC5511 NPN, TO-220 $1.35 each CAT# IRFZ40 $1.25 each KSP8599 PNP, TO-92 5 for .50 .08 10 for $1.10 each MJL1302A PNP, TO-264 $3.00 each MPS8599 PNP, TO-92 5 for .50 .08 MPSA92 PNP, TO-92 3 for $1.00 .28 75Amp 25V power MTP75N03HDL TIP30C PNP, 1A 100V, TO-220 4 for $1.00 .20 CAT# MTP75N03HDL $1.75 each TIP31C NPN, 3A 100V, TO220 .45 each .35 10 for $1.50 each TIP32C PNP, 3A 100V, TO220 .35 each .30 ZTX651 NPN, 2A, 80V, TO-92 .35 each .30 IRF820 500V, 3.0 Ohm, 2.5A. CAT# IRF820 85¢ each TO-92 SOCKET 10 for 75¢ each • 100 for 65¢ each CAT# STR-92 4 for $1.00 • 100 for $20.00 IRFBG30 1000V, 3.1A, 5.0 Ohms. CAT# IRFBG30 $1.00 each BJTs - BIPOLAR TRANSISTOR 10 for 90¢ each • 100 for 85¢ each 2SA1930 180V 2A BJT, TO-220-3 FP PNP, complement to 2SC5171. DARLINGTON TRANSISTORS CAT# 2SA1930 85¢ each CAT# Desc Ea 100+ GES-5307 NPN, TO-92 5 for 50¢ .08 2SC5171 180V 2A BJT, TO-220-3 FP MPSA13 NPN, TO-92 5 for 50¢ .08 NPN, complement to 2SA1930. TIP112 NPN TO-220 .50 .40 CAT# 2SC5171 85¢ each TIP120 NPN, 5A 60V, TO-220 .75 .65 TIP142 NPN, 10A 100V, TO247 1.10 .95 OPTOISOLATORS 6 pin DIP package BILATERAL TRIGGER (DIAC) CAT# Description 1 10 100 4N25 NPN transistor output .45 .40 .35 4N26 NPN transistor output .40 .35 .30 CAT # DB-3 28-36 volt 3 for $1.00 100/$27.00 4N27 NPN transistor output .45 .40 .30 4N33 NPN darlington output .50 .45 .35 N-CHANNEL MOSFETS 4N35 NPN transistor output .60 .50 .40 4N38 NPN transistor output .40 .37 .35 RFD4N06L 4A 60V logic level. TO-251 case. H11F1 MOSFET output 1.00 .80 .70 MOC3011 Triac output .50 .45 .40 CAT# RFD4N06L 70¢ each MOC3022 Triac output 1.00 .90 .70 10 for 65¢ each • 100 for 55¢ each TLP372 Darlington output .75 .70 .65 52 30 DAY MONEY-BACK GUARANTEE.
Load more

Recommended publications
  • An Evaluation of Bipolar Transistors Suitable for Active Antenna Applications
    An Evaluation of Bipolar Transistors Suitable for Active Antenna Applications by Chris Trask / N7ZWY Sonoran Radio Research P.O. Box 25240 Tempe, AZ 85285-5240 Senior Member IEEE Email: [email protected] 30 November 2008 Revised 2 December 2008 Revised 5 December 2008 Revised 15 December 2008 Trask, “Bipolar Transistor Evaluation” 1 15 December 2008 Introduction families on a curve tracer or by measuring the performance of the device in a circuit. In the design of active antennas, the intermodulation distortion (IMD) and noise fig- When using a curve tracer, there are a ure (NF) performance of the active devices are number of items that need to be carefully ob- important design considerations together with served in order to ascertain the potential IMD cost and availability. Many designs that have performance of a given device. These include, been published in recent years claim to have but are not limited to, the flatness of the indi- good IMD performance, but make use of de- vidual traces in the linear region, the straight- vices that were obsolete even when the circuitry ness of the individual traces in the linear region, was in the design stage. Other devices that the spacing between the traces, the saturation are readily available have improved perform- voltage, and the transition between the satura- ance, and it may simply be a matter of the de- tion region and the linear region. signers lacking sufficient information to make intelligent choices so as to arrive at finished Curve families for bipolar devices are gen- designs having a performance/cost ratio that erated by applying a fixed base current (IB) to would be attractive to builders and which make the device and then varying the collector volt- use of devices that are currently in production age (VCE)while observing the collector current and which are available from popular distribu- (IC).
    [Show full text]
  • Ferranti Quick Reference Guide
    FERRANTI SEMICONDUCTORS A short-form data book covering discrete components & integrated circuits @ FERRANTI pic 1983 The copyright in this work is vested in Ferranti pic and this document is issued for the purpose only for which it is supplied. No licence is implied for the use of any patented feature. It must not be reported in whole or in part or used for tendering or manufacturing purposes except under an agreement or with the consent in writing of Ferranti pic and then only on the condition that this notice is included in any such reproduction. Information furnished is believed to be accurate but no liability in respect of any use of it is accepted by Ferranti pic. Issue 2. February 1983 Prinled in U.S.A. iii CONTENTS This data book contains abbreviated information on the entire range of Ferranti Semiconductors. Individual data sheets are available on request, as is technical advice on the usage of any of the devices listed. PRODUCT LIST SECTION 1 DISCRETE COMPONENTS SECTION 2 INTEGRATED CIRCUITS SECTION 3 UNCOMMITTED LOGIC ARRAYS SECTION 4 PACKAGE OUTLINES SECTION 5 SALES OFFICES, SALES REPRESENTATIVES DISTRIBUTORS (ii) ALPHA·NUMERIC PRODUCT LIST DEVICE TYPE PAGE(S) DEVICE TYPE PAGE(S) DEVICE TYPE PAGE(S) BAT21 H13. H14 BC182P E4 BCW29 H5 BAT21J H13. H14 BC183P E5 BCW29R H5 BAT22 H13. H14 BC184P E9 BCW30 H5 BAT22J H13. H14 BCW30R H5 BAT23 H13. H14 BC212P E6 BCW31 H5 BAT23H H13. H14 BC213P E6 BCW31R H5 BC214P E10 BAT24 H13. H14 BAT24H H13. H14 BC237P E4 BCW32 H5 BAT25 H13. H14 BC238P E5 BCW32R H5 BAT26 H13.
    [Show full text]
  • Precision Voltage-To-Current Converter/Transmitter Xtr110
    XTR110 SBOS141C – JANUARY 1984 – REVISED SEPTEMBER 2009 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS G 4mA TO 20mA TRANSMITTER INDUSTRIAL PROCESS CONTROL G SELECTABLE INPUT/OUTPUT RANGES: G PRESSURE/TEMPERATURE TRANSMITTERS 0V to +5V, 0V to +10V Inputs G CURRENT-MODE BRIDGE EXCITATION 0mA to 20mA, 5mA to 25mA Outputs G GROUNDED TRANSDUCER CIRCUITS Other Ranges G CURRENT SOURCE REFERENCE FOR DATA G 0.005% MAX NONLINEARITY, 14 BIT ACQUISITION G PRECISION +10V REFERENCE OUTPUT G PROGRAMMABLE CURRENT SOURCE FOR G SINGLE-SUPPLY OPERATION TEST EQUIPMENT G WIDE SUPPLY RANGE: 13.5V to 40V G POWER PLANT/ENERGY SYSTEM MONITORING DESCRIPTION The XTR110 is a precision voltage-to-current converter designed for analog signal transmission. It accepts inputs V Force 15 16 +V of 0 to 5V or 0 to 10V and can be connected for outputs of REF CC R9 V Sense 12 +10V 1 Source 4mA to 20mA, 0mA to 20mA, 5mA to 25mA, and many other REF R Reference 8 Resistor commonly used ranges. V Adjust 11 13 Source REF Sense A precision on-chip metal film resistor network provides input Gate V (10V) 4 A 14 scaling and current offsetting. An internal 10V voltage refer- IN1 2 Drive V In 3 7 ence can be used to drive external circuitry. REF R1 Offset (zero) R3 R The XTR110 is available in 16-pin plastic DIP, ceramic DIP 5 6 Adjust and SOL-16 surface-mount packages. Commercial and in- R 4 A1 dustrial temperature range models are available. R2 Span 8 Adjust R7 V (5V) 5 10 4mA IN2 Span R6 Common 2 9 16mA Span Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
    [Show full text]
  • Optoisolators Transistors
    TRANSISTORS TRANSISTORS CAT# Description Price 100 2N2222A NPN, TO-18 2 for $1.50 .60 2N2906 PNP, TO-18 2 for $1.00 .35 PN2907 PNP, TO-92 5 for .75 .10 2N3055 NPN, TO-3 $2.35 each 2.00 TO-18 TO-92 TO-202 TO-218 TO-220 TO-3 2N3904 NPN, TO-92 5 for .75 .13 2N3906 PNP, TO-92 5 for .75 .13 TRIAC 2N4124 NPN, TO-92 5 for .75 .13 2N4400 NPN, TO-92 5 for .50 .08 CAT# AMP VOLT CASE Each 10 2N4401 NPN, TO-92 5 for .75 .13 Q6025P 25 600 TO-3 base 3.00 2.50 2N4403 PNP, TO-92 10 for .80 .05 2N5401 PNP, TO-92 .25 each .20 SCR 2N5416 PNP, TO-39 $1.95 each 2SC2352 NPN, TO-92 3 for 1.00 .29 8A 200V TO-202 SCR. 200 uA gate current. 2SC3457 NPN, TO-220 .65 each .50 CAT# S306B1 45¢ each • 10 for 40¢ each 2SC5511 NPN, TO-220 .95 each .75 BC556B PNP, TO-92 5 for $1.00 Gate sensitive SCR, Teccor T106F41. D33D30 NPN, TO-92 5 for $1.00 .16 Off-state voltage: 50V. Gate trigger, D45H5 PNP, TO-220 .75 each .65 Gate: 200uA 3-pin DIP package. KSP8599 PNP, TO-92 5 for .50 .08 CAT# T106F41 2 for $1.00 MJL1302A PNP, TO-264 $3.00 each MPS8599 PNP, TO-92 5 for .50 .08 N-CHANNEL J-FET PN2222A NPN, TO-92 5 for .80 .15 TIP31C NPN, 3A 100V, TO220 .45 each .35 30V 350MW.
    [Show full text]
  • Linear Voltage Regulators
    Linear Voltage Regulators LINEAR VOLTAGE REGULATORS INTRODUCTION Block Diagram of Linear Voltage Regulator UNREGULA TED V = V (1+R /R ) INPUT OUT REF F E ERROR AMP I I OA B POWER where VREF is a temterature VOLTAGE stabilised reference voltage. REFERENCE TRANSISTOR I T IL max = VSEN max/RSEN I L where VSEN max is set by either CURRENT and TEMPERA TURE TJmax or by the absolute RSEN SENSING maximum current, whichever is R smaller. I E L O RE RF G U L U T O/P VOLTAGE SENSING O L - V + P F A A U D T T E D Discrete Voltage Regulator UNREGULATED INPUT D 0,1 µF S LF351 2N5337 10k 110V 2N3055 7,5V 60Hz 500 mW 47 to 1000 pF 0,1 µF 1k CFIL TO CI RCUI T 2N2222 GR OU N D I L RSEN R RF E G O U L + U T RE O L 0,1 µF Vout A A P D - T U E T SEPA RA TE GROUND FOR LOA D I L D Discrete voltage regulators generally provide much better performance than IC regulators because the op amp used has more gain and because the power transistor does not heat up the rest of the circuit. For most applications, IC regulators perform very satisfactorily. -1- Linear Voltage Regulators EFFICIENCY OF LINEAR REGULATORS Linear regulators are easier to design and generally less expensive but waste more power because the power elements (transistors) operate in their active or linear mode. Switching regulators are more complex and more difficult to design but are more power efficient because their power elements (transistors) are switched ON and OFF alternately and consume very little power.
    [Show full text]
  • National Semiconductor Voltage Regulator Handbook 1980
    CD 09O VOLTAGE REGULATOR HANDBOOK NATIONAL SEMICONDUCTOR 37 Loverock Road Reading Berkshire RG3 1ED Telephone (0734) 585171 Telex 848370 Celdis Electronic Distributed Speddisto Art ive Components I>ivi*k>n HW VOLTAGE REGULATOR HANDBOOK NATIONAL SEMICONDUCTOR Contributors: Nello Sevastopoulos Jim Sherwin Dennis Bonn George Cleveland James E. Solomon 'National Semiconductor Corporation 2900 Semiconductor Drive, Santa Clara, CalHornla 96051 [4M| 737-5000(TWX (910) 339-92J0 dmertWd: Hatloijl aoafl not «Burri* iny [•itmnslbHlny lor uta at my circuitry »ny no elrsuM pit*nl lictnut *r* implied, «no Nit>snil reimnS the fin.ni. si Sitm wiihaul nolie* to Ch*rv|}t »«> clrcuilry. nw Table of Contents 1.0 Introduction ...... ,,,......,..,, 1-1 1.1 How to Use this Book ., , 1-1 1.2 Features of On-Card Regulation 1-1 1.3 Fixed Voltage 3-Terminal Regulator Description 1-4 1.4 Comparison, Fixed Voltage 3-Terminal vs Variable Voltage Regulators by Application 1-4 2.0 Data Sheet Summary 2*1 3.0 Product Selection Procedures . .3-1 4.0 Heat Flow & Thermal Resistance .4-1 5.0 Selection of Commercial Heat Sink 5-1 6.0 Custom Heat Sink Design ,6-1 7.0 Applications Circuits and Descriptive Information 7-1 7.1 Positive Regulators .7-1 7.2 Negative Regulators 7-5 7.3 Dual Tracking Regulators 7-6 7.4 Adjustable Voltage Regulators 7-20 7.5 Automotive Applications 7*32 8.0 Power Supply Design 8-1 8.1 Scope , ,. , 8-1 8.2 Capacitor Selection 8-4 8.3 Diode Selection 8-4 9.0 Appendix , .
    [Show full text]
  • 2N3055 Datasheet Pdf
    2n3055 Datasheet Pdf 1 / 6 2n3055 Datasheet Pdf 2 / 6 3 / 6 Maximum Ratings[edit]The maximum collector-to-emitter voltage for the 2N3055, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with 100 ohms a 70 volt breakdown rating, VCER, and the Collector-Emitter Sustaining voltage, VCEO(sus), is given by ON Semiconductor. 1. datasheet 2. datasheet view access 3. datasheet view 2N3055 SILICON NPN TRANSISTOR SGS-THOMSONPREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in JedecTO-3 metalcase.. 1Specifications2HistorySpecifications[edit]The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mid-1970s the fT could be as low as 0.. 5 MHzPackaged in a TO-3 case style, it is a 15 amp, 60 volt (or more, see below), 115 watt power transistor with a β (forward current gain) of 20 to 70 at a collector current of 4 A (this may be 100 to 200 when testing using a multimeter[6]).. INTERNAL SCHEMATIC DIAGRAM October1995 ABSOLUTE MAXIMUM RATINGS Symbol 21 rows 2N3055 Datasheet, 2N3055 PDF, 2N3055 Data sheet, 2N3055 manual, 2N3055 pdf, 2N3055. datasheet datasheet, datasheet or data sheet, datasheet bc548, datasheet atmega328p, datasheet arduino uno, datasheet 1n4007, datasheetcatalog, datasheet esp32, datasheet lm317, datasheet lm358, datasheet view, datasheet pdf, datasheet view access, datasheet meaning, datasheets for datasets, datasheet 360 3utools Latest Version Download For Windows 7 32 Bit [1] Its numbering follows the JEDEC standard [2] It is a transistor type of enduring popularity.
    [Show full text]
  • 6.101 Course Roadmap Time Domain Analysis
    6.101 Course Roadmap • Passive components: RLC –with RF • Diodes • Transistors: BJT, MOSFET, antennas • Op‐amps, 555 timer, ECG • • Course Roadmap Switch Mode Power Supplies • Rectification • • Bipolar Junction Transistor Fiber optics, PPG • Applications Acnowledgements: Neamen, Donald: Microelectronics Circuit Analysis and Design, 3rd Edition The Art Of Electronics by Horowitz and Hill 6.101 Spring 2020 Lecture 3 1 6.101 Spring 2020 Lecture 3 2 Time Domain Analysis Fourier Series ‐ Ramp v (Ac KAm cosmt)*cosct KA v A cos t m [cos( )t cos( )t] c c 2 c m c m function [ t, sum ] = ramp(number) %generate a ramp based on fixed number of terms % t = 0:.1:pi*4; % display two full cycles with 0.1 spacing sum = 0 for n=1:number sum = sum + sin(n*t)*(-1)^(n+1)/(n*pi); end plot(t, sum) shg end 6.101 Spring 2020 Lecture 3 3 6.101 Spring 2020 Lecture 3 4 CT: center tap Rectifier Circuits Full Wave Bridge vs Center Tapped + 1N4001 + V = 120 V 60 Hz 12.6 VCT RMS C F R L v OUT out - Pri Sec 3a) Half-wave rectifier circuit diagram 1N4001 + + 120 V 60 Hz 12.6 VCT RMS C F R L v OUT Vout = - Pri Sec Center tapped advantages: 1N4001 3b) Full-wave rectifier circuit diagram • Lower diode voltage drop (high efficiency) 4x 1N4001 + • Secondary windings carries ½ average + 12.6 VCT RMS 120 V 60 Hz CF R v L OUT Vout = current (thinner windings, easier to wind) - Pri Sec • Used in computer power supplies 3c) Bridge rectifier circuit diagram RC >> 16.6ms why? 6.101 Spring 2020 Lecture 3 5 6.101 Spring 2020 Lecture 3 6 Power Supply Ripple Voltage Calculation Physical Wiring Matters D2 conduction angle in degrees 6.101 Spring 2020 Lecture 3 7 6.101 Spring 2020 Lecture 3 8 5 V Adapters Diode AC Resistance 500 ma 1000 ma 300 ma 6.101 Spring 2020 Lecture 3 9 6.101 Spring 2020 Lecture 3 10 Log Amplifier Bipolar Junction Transistors bypass caps 0.1uf caps (2) NPN collector • BJT can operate in a linear ic = βib mode (amplifier) or can ID i IR = - ID b operate as a digital switch.
    [Show full text]
  • IC Sockets & Transistors
    IC Sockets & Transistors .050" (1.27mm) Pitch SIMM Sockets Transistors (Continued) DWeb Code: FEN • 72 positions • Left polarization Order in multiples of 10 Y h @ Ic) • Contact: phosphor bronze Part No. Mfr. Product No. Pkg. Desc. Vceo Min. ( FE 1 10 100 • PCB retention: press-fit plastic peg 669791 783498 FSC 2N4401TAR TO-92 NPN 40 20 @ .1mA ...... $.06 $.05 • Contact plating (plating thickness): gold (0.76µm; 30µ"); tin/lead (5µm; 200µ") 211490 ! 2N4923 TO-225 NPN — 80 @ 1A......... .45 .39 .35 669791: Right polarization; gold contact plating 2125608 MOT SPS4942(9568) TO-92 NPN 30 60 @ .5A ......... .05 .04 Part No. Mfr. Part No. Description 1 10 1201380 FSC PN4953 TO-92 NPN 30 150 @ .01A ....... .05 .04 Semiconductors 669791 15-82-0778R Vertical .......................................................... $1.95 $1.49 310666 ! 2N5038 TO-3 NPN 150 20 @ 12A .... 4.75 4.49 3.95 ! 670784 15-82-1538R Right angle ...................................................... 1.95 1.49 140373 2N5179 TO-72 NPN 12 25 @ .003A . 1.09 .99 .89 1945081 FSC 2N5306 TO-92 NPN 25 7000 @ .002A ..... .09 .07 Transistors DWeb Code: FEN 924300 ST 2N6284R TO-3/2 NPN 100 750 @ 10A .... 3.25 2.95 2.59 140353 ! 2N6488 TO-220AB NPN 80 20 @ 5A ........ .29 .25 .15 Order in multiples of 10 1945031 FSC MPS6515 TO-92 NPN 25 250 @ .002A ..... .05 .03 Y h @ Ic) Part No. Mfr. Product No. Pkg. Desc. Vceo Min. ( FE 1 10 100 194618 ! 2N6547 TO-3 NPN 400 12 @ 5A ...... 4.49 4.25 3.75 26462 ! MPSA06 TO-92 NPN 80 100k @ .01A ......
    [Show full text]
  • Bipolar Junction Transistors
    Module www.learnabout-electronics.org 3 Bipolar Junction Transistors Module 3.1 Bipolar Junction Transistors What you’ll learn in Module 3 What are BJTs? Section 3.1 Bipolar Junction Transistors (BJTs). • BJT circuit symbols. • BJT output transistors. • Complementary pairs. • Small signal BJTs. • Common transistor packages. Section 3.2 Making Transistors. • Germanium Alloy Diffused Transistors. Fig. 3.1.1 Bipolar Junction Transistors • Silicon Planar Transistors. Bi-polar transistors are amongst the most widely used Section 3.3 How a BJT Works. devices for amplification of all types of electrical • Doping. signals in discrete circuits, i.e. circuits made from individual components rather than integrated circuits • Current Flow. (I/Cs). BJTs are also used in circuits together with I/Cs Section 3.4 BJT Animation. , since it is often more practical to use discrete output • Base bias transistors where a higher power output is needed than • Collector current the I/C can provide. For example an integrated circuit may carry out all of the processing of the signals in a • Junction potential system, but then pass the processed signal to a single Section 3.5 Current Gain. discrete transistor or a pair of matched transistors for • Bipolar Transistor Characteristics power amplification to drive a loudspeaker or other output device. It is also often more convenient to use a • Transfer. discrete transistor for an individual circuit within a • Input. larger system, for which I/Cs are not readily available. • Output. • Mutual. Section 3.6 Transistor Connections. • Common Emitter. • Common Collector. • Common Base. Section 3.7 Bipolar Transistor Quiz. • Check your understanding of Bipolar Transistors.
    [Show full text]
  • The Smd Codebook
    Read our latest product news at www.soselectronic.com THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code. Identifying the manufacturers' type number of an SMD device from the package code can be a difficult task, involving combing through many different databooks. This HTML book is designed to provide an easy means of device identification. It lists well over 3,400 device codes in alphabetical order, together with type numbers, device characteristics or equivalents and pinout information. How to use the SMD Codebook To identify a particular SMD device, first identify the package style and note the ID code printed on the device. Now look up the code in the alphanumeric listing which forms the main part of this book by clicking on the first character shown in the left-menu. Unfortunately, each device code is not necessarily unique. For example a device coded 1A might be either a BC846A or a FMMT3904. Even the same manufacturer may use the same code for different devices! Documents from SOS electronic web page. For more information visit www.soselectronic.com If there is more than one entry, use the package style to differentiate between devices with the same ID code. This compilation has been collected from R P Blackwell G4PMK, manufacturers' data and other sources of SMD device ID codes, pinout and leaded device equivalent information. The entries under the Manufacturer column are not intended to be comprehensive; rather they are intended to provide help on locating sources of more detailed information if you require it.
    [Show full text]
  • Series for Design Engineers
    Series for Design Engineers Brown Power Supply Cookbook, Second Edition Dostál Operational Amplifiers, Second Edition Dye Radio Frequency Transistors: Principles and Practical Applications, Second Edition Gates Energy Products Rechargeable Batteries Applications Handbook Hickman Electronic Circuits, Systems and Standards: The Best of EDN Marston Newnes Electronic Circuits Pocket Book Marston Integrated Circuit and Waveform Generator Handbook Marston Diode, Transistor and FET Circuits Manual Pease Troubleshooting Analog Circuits Sinclair Passive Components Williams Analog Circuit Design: Art, Science and Personalities Power Supply Cookbook Second Edition Marty Brown Boston Oxford Johannesburg Melbourne New Delhi Newnes is an imprint of Butterworth–Heinemann. Copyright © 2001 by Butterworth–Heinemann A member of the Reed Elsevier group All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, electronic, mechanical, photocopying, recording, or otherwise, without the prior written permission of the publisher. Recognizing the importance of preserving what has been written, Butterworth–Heinemann prints its books on acid-free paper whenever possible. Butterworth–Heinemann supports the efforts of American Forests and the Global ReLeaf program in its campaign for the betterment of trees, forests, and our environment. Library of Congress Cataloging-in-Publication Data Brown, Marty. Power supply cookbook / Marty Brown.—2nd ed. p. cm. Includes bibliographical references and index. ISBN 0-7506-7329-X 1. Electric power supplies to apparatus—Design and construction. 2. Power electronics. 3. Electronic apparatus and appliances—power supply. I. Title. TK7868.P6 B76 2001 621.381¢044—dc21 00-050054 British Library Cataloguing-in-Publication Data A catalogue record for this book is available from the British Library.
    [Show full text]