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MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays

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MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of http://onsemi.com industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA PDIP−16 P SUFFIX permit them to drive incandescent lamps. CASE 648 The MC1413, B with a 2.7 kW series input resistor is well suited for 16 systems utilizing a 5.0 V TTL or CMOS Logic. 1 Features SOIC−16 • Pb−Free Packages are Available* D SUFFIX 16 CASE 751B • NCV Prefix for Automotive and Other Applications Requiring Site 1 and Control Changes 1/7 MC1413, B ORDERING INFORMATION † 2.7 k Pin 9 Device Package Shipping MC1413D SOIC−16 48 Units/Rail 5.0 k MC1413DG SOIC−16 48 Units/Tube 3.0 k (Pb−Free) MC1413DR2 SOIC−16 2500 Tape & Reel MC1413DR2G SOIC−16 2500 Tape & Reel (Pb−Free) Figure 1. Representative Schematic Diagram MC1413P PDIP−16 25 Units/Rail MC1413PG PDIP−16 25 Units/Rail (Pb−Free) 1 16 MC1413BD SOIC−16 48 Units/Rail MC1413BDG SOIC−16 48 Units/Rail 2 15 (Pb−Free) MC1413BDR2 SOIC−16 2500 Tape & Reel 3 14 MC1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) 4 13 MC1413BP PDIP−16 25 Units/Rail MC1413BPG PDIP−16 25 Units/Rail 5 12 (Pb−Free) NCV1413BDR2 SOIC−16 2500 Tape & Reel 6 11 NCV1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) 7 10 †For information on tape and reel specifications, including part orientation and tape sizes, please 8 9 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (Top View) DEVICE MARKING INFORMATION Figure 2. PIN CONNECTIONS See general marking information in the device marking section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: July, 2006 − Rev. 8 MC1413/D MC1413, MC1413B, NCV1413B MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.) Rating Symbol Value Unit Output Voltage VO 50 V Input Voltage VI 30 V Collector Current − Continuous IC 500 mA Base Current − Continuous IB 25 mA Operating Ambient Temperature Range TA °C MC1413 −20 to +85 MC1413B −40 to +85 NCV1413B −40 to +125 Storage Temperature Range Tstg −55 to +150 °C Junction Temperature TJ 150 °C Thermal Resistance, Junction−to−Ambient RqJA °C/W Case 648, P Suffix 67 Case 751B, D Suffix 100 Thermal Resistance, Junction−to−Case RqJC °C/W Case 648, P Suffix 22 Case 751B, D Suffix 20 Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 2000 Machine Model (MM) 400 Charged Device Model (CDM) 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 2 MC1413, MC1413B, NCV1413B ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Output Leakage Current ICEX mA (VO = 50 V, TA = +85°C) All Types − − 100 (VO = 50 V, TA = +25°C) All Types − − 50 Collector−Emitter Saturation Voltage VCE(sat) V (IC = 350 mA, IB = 500 mA) All Types − 1.1 1.6 (IC = 200 mA, IB = 350 mA) All Types − 0.95 1.3 (IC = 100 mA, IB = 250 mA) All Types − 0.85 1.1 Input Current − On Condition II(on) mA (VI = 3.85 V) MC1413, B − 0.93 1.35 Input Voltage − On Condition VI(on) V (VCE = 2.0 V, IC = 200 mA) MC1413, B − − 2.4 (VCE = 2.0 V, IC = 250 mA) MC1413, B − − 2.7 (VCE = 2.0 V, IC = 300 mA) MC1413, B − − 3.0 Input Current − Off Condition All Types II(off) 50 100 − mA (IC = 500 mA, TA = 85°C) DC Current Gain hFE 1000 − − − (VCE = 2.0 V, IC = 350 mA) Input Capacitance CI − 15 30 pF Turn−On Delay Time ton − 0.25 1.0 ms (50% EI to 50% EO) Turn−Off Delay Time toff − 0.25 1.0 ms (50% EI to 50% EO) Clamp Diode Leakage Current TA = +25°C IR − − 50 mA (VR = 50 V) TA = +85°C − − 100 Clamp Diode Forward Voltage VF − 1.5 2.0 V (IF = 350 mA) NOTE: NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring site and change control. http://onsemi.com 3 MC1413, MC1413B, NCV1413B TYPICAL PERFORMANCE CURVES − TA = 25°C 400 400 300 300 All Types MC1413, B 200 200 , OUTPUT CURRENT (mA) CURRENT , OUTPUT 100 (mA) CURRENT , OUTPUT 100 O O I I 0 0 0 1.0 2.0 3.0 4.0 5.08.09.0 10 11 12 0 50 100 150 200 250 300 350 400 VI, INPUT VOLTAGE (V) II, INPUT CURRENT (mA) Figure 3. Output Current versus Input Voltage Figure 4. Output Current versus Input Current 800 2.5 700 PIN 13 2.0 600 PIN 10 Maximum 500 1 Output Conducting at a Time 1.5 PIN 16 400 Typical 300 1.0 , INPUT CURRENT (mA) CURRENT , INPUT I 200 I , COLLECTOR CURRENT (mA) CURRENT , COLLECTOR 0.5 C All Types I 100 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.04.0 5.0 6.0 7.0 8.0 VCE(sat), SATURATION VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 5. Typical Output Characteristics Figure 6. Input Characteristics − MC1413, B 1000 1 700 500 2 3 300 4 200 5 , COLLECTOR CURRENT (mA) CURRENT , COLLECTOR 6 NUMBER OF DRIVERS USED C I 7 100 10 20 30 50 70 100 % DUTY CYCLE Figure 7. Maximum Collector Current versus Duty Cycle (and Number of Drivers in Use) http://onsemi.com 4 MC1413, MC1413B, NCV1413B MARKING DIAGRAMS PDIP−16 P SUFFIX CASE 648 16 16 MC1413P MC1413BP ULN2003A ULQ2003A AWLYYWWG AWLYYWWG 1 1 SOIC−16 D SUFFIX CASE 751B 16 16 16 MC1413DG MC1413BDG NCV1413BDG AWLYWW AWLYWW AWLYWW 1 1 1 A = Assembly Location WL = Wafer Lot YY, Y = Year WW = Work Week G = Pb−Free Package http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PDIP−16 CASE 648−08 ISSUE V 16 DATE 22 APR 2015 1 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. D A 2. CONTROLLING DIMENSION: INCHES. 16 9 E 3. DIMENSIONS A, A1 AND L ARE MEASURED WITH THE PACK- H AGE SEATED IN JEDEC SEATING PLANE GAUGE GS−3. 4. DIMENSIONS D, D1 AND E1 DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS ARE NOT TO EXCEED 0.10 INCH. E1 5. DIMENSION E IS MEASURED AT A POINT 0.015 BELOW DATUM PLANE H WITH THE LEADS CONSTRAINED PERPENDICULAR TO DATUM C. 6. DIMENSION eB IS MEASURED AT THE LEAD TIPS WITH THE 18 c LEADS UNCONSTRAINED. NOTE 8 b2 7. DATUM PLANE H IS COINCIDENT WITH THE BOTTOM OF THE B END VIEW LEADS, WHERE THE LEADS EXIT THE BODY. TOP VIEW WITH LEADS CONSTRAINED 8. PACKAGE CONTOUR IS OPTIONAL (ROUNDED OR SQUARE NOTE 5 CORNERS). A2 e/2 INCHES MILLIMETERS A DIM MIN MAX MIN MAX NOTE 3 A −−−− 0.210 −−− 5.33 L A1 0.015 −−−− 0.38 −−− A2 0.115 0.195 2.92 4.95 b 0.014 0.022 0.35 0.56 b2 0.060 TYP 1.52 TYP A1 SEATING C 0.008 0.014 0.20 0.36 C PLANE M D 0.735 0.775 18.67 19.69 D1 D1 0.005 −−−− 0.13 −−− e eB E 0.300 0.325 7.62 8.26 E1 0.240 0.280 6.10 7.11 16X END VIEW b e 0.100 BSC 2.54 BSC NOTE 6 0.010 M CAM B M eB −−−− 0.430 −−− 10.92 SIDE VIEW L 0.115 0.150 2.92 3.81 M −−−− 10 ° −−− 10 ° GENERIC MARKING DIAGRAM* 16 XXXXXXXXXXXX XXXXXXXXXXXX STYLE 1: STYLE 2: AWLYYWWG PIN 1. CATHODE PIN 1. COMMON DRAIN 1 2. CATHODE 2. COMMON DRAIN 3. CATHODE 3. COMMON DRAIN 4. CATHODE 4. COMMON DRAIN XXXXX = Specific Device Code 5. CATHODE 5. COMMON DRAIN A = Assembly Location 6. CATHODE 6. COMMON DRAIN WL = Wafer Lot 7. CATHODE 7. COMMON DRAIN 8. CATHODE 8. COMMON DRAIN YY = Year 9. ANODE 9. GATE WW = Work Week 10. ANODE 10. SOURCE 11. ANODE 11. GATE G = Pb−Free Package 12. ANODE 12. SOURCE 13. ANODE 13. GATE *This information is generic. Please refer to 14. ANODE 14. SOURCE device data sheet for actual part marking. 15. ANODE 15. GATE G 16. ANODE 16. SOURCE Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42431B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: PDIP−16 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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