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Navy Electricity and Electronics Training Series
NONRESIDENT TRAINING COURSE SEPTEMBER 1998 Navy Electricity and Electronics Training Series Module 7—Introduction to Solid-State Devices and Power Supplies NAVEDTRA 14179 DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. Although the words “he,” “him,” and “his” are used sparingly in this course to enhance communication, they are not intended to be gender driven or to affront or discriminate against anyone. DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited. PREFACE By enrolling in this self-study course, you have demonstrated a desire to improve yourself and the Navy. Remember, however, this self-study course is only one part of the total Navy training program. Practical experience, schools, selected reading, and your desire to succeed are also necessary to successfully round out a fully meaningful training program. COURSE OVERVIEW: To introduce the student to the subject of Solid-State Devices and Power Supplies who needs such a background in accomplishing daily work and/or in preparing for further study. THE COURSE: This self-study course is organized into subject matter areas, each containing learning objectives to help you determine what you should learn along with text and illustrations to help you understand the information. The subject matter reflects day-to-day requirements and experiences of personnel in the rating or skill area. It also reflects guidance provided by Enlisted Community Managers (ECMs) and other senior personnel, technical references, instructions, etc., and either the occupational or naval standards, which are listed in the Manual of Navy Enlisted Manpower Personnel Classifications and Occupational Standards, NAVPERS 18068. THE QUESTIONS: The questions that appear in this course are designed to help you understand the material in the text. -
Supercapattery: Merit-Merge of Capacitive and Nernstian Charge Storage Mechanisms
Supercapattery: Merit-merge of capacitive and Nernstian charge storage mechanisms George Zheng Chen University of Nottingham Ningbo China, 199 Taikang East Road, Ningbo, 315100, Zhejiang, China. First published 2020 This work is made available under the terms of the Creative Commons Attribution 4.0 International License: http://creativecommons.org/licenses/by/4.0 The work is licenced to the University of Nottingham Ningbo China under the Global University Publication Licence: https://www.nottingham.edu.cn/en/library/documents/research- support/global-university-publications-licence-2.0.pdf Supercapattery: Merit-merge of capacitive and Nernstian charge storage mechanisms George Zheng Chen1,2 1 Department of Chemical and Environmental Engineering, Faculty of Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, UK 2 Department of Chemical and Environmental Engineering, Faculty of Science and Engineering, University of Nottingham Ningbo China, University Park, Ningbo 315100, China Email: [email protected] Abstract Supercapattery is the generic name for hybrids of supercapacitor and rechargeable battery. Batteries store charge via Faradaic processes, involving reversible transfer of localised or zone-delocalised valence electrons. The former is governed by the Nernst equation. The latter leads to pseudocapacitance (or Faradaic capacitance) which may be differentiated from electric double layer capacitance with spectroscopic assistance such as electron spin resonance. Since capacitive storage is the basis of supercapacitors, the combination of capacitive and Nernstian mechanisms has dominated supercapattery research since 2018, covering nanostructured and compounded metal oxides and sulfides, water-in-salt and redox active electrolytes and bipolar stacks of multi-cells. The technical achievements so far, such as specific energy of 270 Wh/kg in aqueous electrolyte, and charging-discharging for over 5000 cycles, benchmark a challenging but promising future of supercapattery. -
Equivalent Circuit of Unsymmetrical Inductance Diode Using Linvill Lumped Model
Scholars' Mine Masters Theses Student Theses and Dissertations 1965 Equivalent circuit of unsymmetrical inductance diode using Linvill lumped model Donald Lawrence Willyard Follow this and additional works at: https://scholarsmine.mst.edu/masters_theses Part of the Electrical and Computer Engineering Commons Department: Recommended Citation Willyard, Donald Lawrence, "Equivalent circuit of unsymmetrical inductance diode using Linvill lumped model" (1965). Masters Theses. 5235. https://scholarsmine.mst.edu/masters_theses/5235 This thesis is brought to you by Scholars' Mine, a service of the Missouri S&T Library and Learning Resources. This work is protected by U. S. Copyright Law. Unauthorized use including reproduction for redistribution requires the permission of the copyright holder. For more information, please contact [email protected]. EQUIV ALBNT CJ.RCUIT OF UNSYMMETRICAL INDUCTANCE DIODE USDJG LINVJLL LUMPED MODEL BY AP'/ r· ol~'- t'\.)J} - / OONALD L~ vJILLYARD J V~ ~~ :;> A THESIS submitted to the faculty of the UNIVERSITY OF MISSOURI AT ROLLA in partial fulfillment of the requirements for the ~gree of 1-W3TER OF SCIENCE IN ELECTRICAL ENGINEERING Rolla, Missouri 1965 Approved By ~/}/)/~~) ~~ ii ABSTRACT Integrated circuit techniques and applications are rapidJ.y changing the electronics industry. A problem common to both state of-the-art approaches to integrated circuit fabrication is that of miniaturizing and intGgrating inductors. It is found that, for a certain range of injection current levels, certain unsymmetrically doped junction diodes have an inductive small-signal impedance. This thesis discusses the theor,y of inductance diodes and applies finite difference equations and the Linvill lumped model to the differential equations that describe their carrier nov.r processes. -
History of Transistors
TRANSISTOR MUSEUM™ HISTORY OF TRANSISTORS VOLUME 1 THE FIRST GERMANIUM HOBBYIST TRANSISTORS Special Collection of Historic Transistors Designed for the Historian, Engineer, Experimenter, Researcher and Hobbyist INCLUDED ARE CLASSIC EXAMPLES OF THESE 1950/60s GERMANIUM HOBBYIST TRANSISTORS 2N35 2N107 SURFACE BARRIER 2N170 CK78X A Publication of the Transistor Museum™ Copyright © 2009 by Jack Ward ABOUT THIS BOOK AND THE TRANSISTOR MUSEUM™ This book is the first of a series of History of Transistors publications developed by the Transistor Museum™. The History of Transistors Volume 1 documents The First Germanium Hobbyist Transistors, a subject that should be of great interest to the modern-day experimenter, engineer, historian, researcher and hobbyist. Included in the book are technical descriptions, historical commentary, circuits, and photographs of the famous germanium transistors that first appeared in the 1950s and have had a profound effect on the world of electronics ever since. Also included are working examples of some of the best remembered hobbyist transistors – 2N35, 2N107, Surface Barrier, 2N170, and CK78X. The web version of this book is available as a pdf at this url: http://www.semiconductormuseum.com/MuseumLibrary/HistoryOfTransistorsVolume1.pdf You can purchase a hardcopy version of the book, which also includes packaged examples of all five hobbyist transistors listed above, as well as additional storage/display envelopes for starting your own collection. You can visit the Transistor Museum™ Store for details on how to purchase this book as well as numerous other historic semiconductors and publications. http://www.semiconductormuseum.com/MuseumStore/MuseumStore_Index.htm The Transistor Museum™ is a virtual museum that has been developed to help preserve the history of the greatest invention of the 20TH century – the TRANSISTOR. -
ME430 Mechatronics Lab 2: Transistors, H-Bridges, and Motors
Name ____________________________________ Name ____________________________________ ME430 Mechatronics Lab 2: Transistors, H‐Bridges, and motors The lab team has demonstrated: Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate ______________ Sourcing Current ______________ Sinking Current Part (B) Driving DC Motors using Logic Gates and Transistors ______________ NPN BJT transistor ______________ N‐channel MOSFET transistor ______________ Darlington Chip (ULN2003) Part (C) Using 12 Volt Power Supplies to Drive Lamps and Fans ______________ MOSFETs ______________ BJTs ______________ Darlingtons Part (D) Using a Darlington to drive multiple LEDs ______________ Dancing lights Part (E) Bi‐directional Control of Motors with H‐Bridge chips ______________ DC Motor with bi‐directional 5V drive circuit ______________ Linear actuator DC motor with bi‐directional 12V drive circuit ______________ Stepper Motor at 5V with 2 sets of bi‐directional phases ME430 Mechatronics: Lab 2 1 Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate In the “Intro to Transistors” video lecture, you also learned about sourcing and sinking current from a logic gate. Sinking the current allows much higher current levels. In this part we would like to build the two configurations and verify that they work. (1) Sourcing Current First, rebuild the simple current sourcing circuit you built for the beginning of Lab 1. Make sure that one works before you move on. Recall that it looks like We would like to modify the circuit to also drive (by sourcing the current from the 7404) a DC (brushed) motor. These are the ordinary‐looking silver‐grey motors. -
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO ...................................................... 60V Collector−Base Voltage, VCB ......................................................... 60V Emitter−Base Voltage, VEB ........................................................... 5V Collector Current, IC Continuous ................................................................... 4A Peak ........................................................................ 8A Base Current, IB ................................................................. 80mA Total Power Dissipation (TC = +25C), PD ............................................ 50W Derate Above 25C..................................................... 0.286W/C Operating Junction Temperature Range, TJ ..................................−65 to +200C Storage Temperature Range, Tstg ..........................................−65 to +200C Thermal Resistance, Junction−to−Case, RthJC ..................................... 3.5C/W Electrical Characteristics: (TC = +25C unless -
ULN2803A Darlington Transistor Arrays Datasheet
Product Order Technical Tools & Support & Folder Now Documents Software Community ULN2803A SLRS049H –FEBRUARY 1997–REVISED FEBRUARY 2017 ULN2803A Darlington Transistor Arrays 1 Features 3 Description The ULN2803A device is a 50 V, 500 mA Darlington 1• 500-mA-Rated Collector Current (Single Output) transistor array. The device consists of eight NPN Darlington pairs that feature high-voltage outputs with • High-Voltage Outputs: 50 V common-cathode clamp diodes for switching • Output Clamp Diodes inductive loads. The collector-current rating of each • Inputs Compatible With Various Types of Logic Darlington pair is 500 mA. The Darlington pairs may be connected in parallel for higher current capability. 2 Applications Applications include relay drivers, hammer drivers, • Relay Drivers lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. The • Hammer Drivers ULN2803A device has a 2.7-kΩ series base resistor • Lamp Drivers for each Darlington pair for operation directly with • Display Drivers (LED and Gas Discharge) TTL or 5-V CMOS devices. • Line Drivers Device Information(1) • Logic Buffers PART NUMBER PACKAGE BODY SIZE (NOM) • Stepper Motors ULN2803ADW SOIC (18) 11.55 mm × 7.50 mm • IP Camera (1) For all available packages, see the orderable addendum at • HVAC Valve and LED Dot Matrix the end of the data sheet. Logic Diagram 1 18 1B 1C 2 17 2B 2C 3 16 3B 3C 4 15 4B 4C 5 14 5B 5C 6 13 6B 6C 7 12 7B 7C 8 11 8B 8C 10 COM 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. -
Effects of Various Electrical Fields on Seed Germination Fredrick Warner Wheaton Iowa State University
Iowa State University Capstones, Theses and Retrospective Theses and Dissertations Dissertations 1968 Effects of various electrical fields on seed germination Fredrick Warner Wheaton Iowa State University Follow this and additional works at: https://lib.dr.iastate.edu/rtd Part of the Agriculture Commons, and the Bioresource and Agricultural Engineering Commons Recommended Citation Wheaton, Fredrick Warner, "Effects of various electrical fields on seed germination " (1968). Retrospective Theses and Dissertations. 3521. https://lib.dr.iastate.edu/rtd/3521 This Dissertation is brought to you for free and open access by the Iowa State University Capstones, Theses and Dissertations at Iowa State University Digital Repository. It has been accepted for inclusion in Retrospective Theses and Dissertations by an authorized administrator of Iowa State University Digital Repository. For more information, please contact [email protected]. This dissertation has been microfilmed exactly as received 69-4288 WHEATON, Fredrick Warner, 1942- EFFECTS OF VARIOUS ELECTRICAL FIELDS ON SEED GERMINATION. Iowa State University, Ph.D., 1968 Engineering, agricultural University Microfilms, Inc., Ann Arbor, Michigan EFFECTS OF VARIOUS ELECTRICAL FIELDS ON SEED GERMINATION by Fredrick Warner Wheaton A Dissertation Submitted to the Graduate Faculty in Partial Fulfillment of The Requirements for the Degree of DOCTOR OF PHILOSOPHY Major Subject: Agricultural Engineering Approved : Signature was redacted for privacy. Signature was redacted for privacy. Signature was -
Automatic Gain Control of Transistor Amplifiers
Calhoun: The NPS Institutional Archive Theses and Dissertations Thesis Collection 1955 Automatic gain control of transistor amplifiers Bryan, William L. http://hdl.handle.net/10945/13960 M«nl«ey, California AUTOMATIC GAIN CONTROL OF TRANSISTOR AMPLIFIERS William L* Bxyan 1^ AUTOMATIC GAIN CONTROL OF TRANSISTOR AMPLIFIERS by William Littell Bryan Lieutenant, United States Navy Submitted in partial fulfillment of the requirements for the degree of MASTER OF SCIENCE IN ENGINEERING ELECTRONICS United States Naval Postgraduate School Monterey, California 19 5 5 Tlicsls " •'-'»i;;.;„;'"''"^"'«j This work is accepted as fulfilling the thesis requirements for the degree of * MASTER OF SCIENCE IN ENGINEERING ELECTRONICS from th« United States Naval Postgraduate School PREFACE The rapid progress made in the field of semiconduc- tors since the invention of the transistor seven years ago has widely broadened our theoretical knowledge in the field and greatly increased the potentialities of these devices. Particularly our increasing ability to manxifac- ture reproducible transistors has brought us to the point of designing circuits for specific application to tran- sistors, not just to illustrate the application but rathei* •ngineered to rigid specifications. This paper treats Just such a design, that of obtaining automatic gain control of a transistor amplifier. There has been as yet little published about this difficult problem, and much of the work here presented is believed to be original* The majority of the experimental work connected with this thesis was performed during the author's Industrial Experience Tour while at Lenkurt Electric Company, San Carlos, California, and he is indebted to them for their cooperation and assistance. -
BJT JFET MOSFET Circa 1960 1970 1980 Gm/I (Signal Gain) Best Better Good
• Crossover Distortion •FETS • Spec sheets • Configurations • Applications Acknowledgements: Neamen, Donald: Microelectronics Circuit Analysis and Design, 3rd Edition 6.101 Spring 2020 Lecture 6 1 Three Stage Amplifier – Crossover Distortion Hole Feedback 6.101 Spring 2020 Lecture 5 2 Crossover Distortion Analysis 6.101 Spring 2020 Lecture 5 3 Crossover Distortion Analysis 11 1 v v v e 10 in 10 out • The distortion 0.6v in each direction or 1.2v total vg 570ve resulting in a hole that is: 11 1 0.0172*1.2 ~ 0.02v vout 570 vin vout vn 10 10 • Increasing open loop gain 11 570 will reduce the crossover 1 v 10 v v 10.81v 0.0172v distortion. out 1 in 1 n in n 1 570 1 570 10 10 6.101 Spring 2020 Lecture 5 4 BJT ‐ FET Bipolar Junction Transistor Field Effect Transistor • Three terminal device • Three terminal device • Collector current controlled • Channel conduction by base current ib= f(Vbe) controlled by electric field • Think as current amplifier • No forward biased junction • NPN and PNP i.e. no current • JFETs, MOSFETs • Depletion mode, enhancement mode 6.101 Spring 2020 Lecture 6 5 BJT ‐ JFETS ‐ MOSFETS BJT JFET MOSFET Circa 1960 1970 1980 Gm/I (signal gain) Best Better Good Isolation PN Junction Metal Oxide* ESD Low Moderate Very sensitive Control Current Voltage Voltage Power YES No Yes *silicon dioxide 6.101 Spring 2020 Lecture 6 6 Voltage Noise * * Horowitz & Hill, Art of Electronics 3rd Edition p 170 6.101 Spring 2020 Lecture 6 7 FET Family Tree FET JFET depletion MOSFET n-channel p-channel depletion enhancement n-channel Vgs(off) gate source cutoff or n-channel p-channel Vp pinch-off voltage Vgs(th) gate source threshold voltage 6.101 Spring 2020 Lecture 6 8 Transistor Polarity Mapping* + output n-channel depletion n-channel enhancment n-channel JFET npn bjt input - + p-channel enhancment p-channel JFT pnp bjt - * Horwitz & Hill, the Art of Electronics, 3rd Edition 6.101 Spring 2020 Lecture 6 9 MOSFET & JFETS • MOSFETS – Much more finicky difficult process (to make) than JFET’s. -
Products Catalog Index
Products Catalog Index PART NO. MANUFACTURER DESCRIPTION URL PRICE 2N5116 National Semiconductor Pro-Electron Transistor Datasheets http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 National Semiconductor JFET SWitches/Choppers http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 Philips Semiconductors / P-Channel JFET http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE NXP Semiconductors 2N5116 Siliconix FET Design Catalogue 1979 http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 Siliconix MOSPOWER Design Data Book 1983 http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5116 Vishay Telefunken TRANS JFET P-CH 25MA 3TO-206AA http://www.searchdatasheet.com/2N5116-datasheet.html QUOTE 2N5135 Central Semiconductor NPN EPOXY - SWITCHING AND http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE GENERAL PURPOSE 2N5135 Continental Device India Semiconductor Device Data Book 1996 http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE Limited 2N5135 Fairchild Semiconductor Full Line Condensed Catalogue 1977 http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 Motorola Motorola Semiconductor Datasheet Library http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 National Semiconductor NPN Transistors http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 National Semiconductor General Purpose Amplifiers and Switches http://www.searchdatasheet.com/2N5135-datasheet.html QUOTE 2N5135 National Semiconductor Pro-Electron Transistor Datasheets http://www.searchdatasheet.com/2N5135-datasheet.html -
"Reading Transistor Markings" by Electronics Express
Source: Electronics Express, http://www.elexp.com/hints_tips.aspx Reading Transistor Markings Most transistor markings follow one of these codes: JEDEC, JIS or Pro-Electron. For ICs, look for known numbers (e.g. 741, 4001, 7400) between the prefix and the suffix. Don't confuse it with the date code. ICs typically have two numbers: The part number and the date code. 1. Joint Electron Device Engineering Council (JEDEC) These part numbers take the form: digit, letter, sequential number, [suffix] The letter is always 'N', and the first digit is 1 for diodes, 2 for transistors, 3 for four-leaded devices, and so forth. But 4N and 5N are reserved for opto-couplers. The sequential numbers run from 100 to 9999 and indicate the approximate time the device was first made. If present, a suffix could indicate various things. For example, a 2N2222A is an enhanced version of a 2N2222. It has higher gain, frequency, and voltage ratings. Always check the data sheet. Examples: 1N914 (diode), 2N2222, 2N2222A, 2N904 (transistors). NOTE: When a metal-can version of a JEDEC transistor is remade in a plastic package, it is often given a number such as PN2222A which is a 2N2222A in a plastic case. 2. Japanese Industrial Standard (JIS) These part numbers take the form: digit, two letters, sequential number, [optional suffix] Digits are 1 for diodes, 2 for transistors, and so forth. The letters indicate the type and intended application of the de- vice according to the following code: SA: PNP HF transistor SB: PNP AF transistor SC: NPN HF transistor SD: NPN AF transistor SE: Diodes SF: Thyristors SG: Gunn devices SH: UJT SJ: P-channel FET SK: N-channel FET SM: Triac SQ: LED SR: Rectifier SS: Signal diodes ST: Avalanche diodes SV: Varicaps SZ: Zener diodes The sequential numbers run from 10-9999.