1.ABSTRACT Sound Operated Switch Is One of the Interesting Applications of 555 Timer IC. the Circuit Uses A555 Timer IC and Transistor BC547 for Its Operation
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ME430 Mechatronics Lab 2: Transistors, H-Bridges, and Motors
Name ____________________________________ Name ____________________________________ ME430 Mechatronics Lab 2: Transistors, H‐Bridges, and motors The lab team has demonstrated: Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate ______________ Sourcing Current ______________ Sinking Current Part (B) Driving DC Motors using Logic Gates and Transistors ______________ NPN BJT transistor ______________ N‐channel MOSFET transistor ______________ Darlington Chip (ULN2003) Part (C) Using 12 Volt Power Supplies to Drive Lamps and Fans ______________ MOSFETs ______________ BJTs ______________ Darlingtons Part (D) Using a Darlington to drive multiple LEDs ______________ Dancing lights Part (E) Bi‐directional Control of Motors with H‐Bridge chips ______________ DC Motor with bi‐directional 5V drive circuit ______________ Linear actuator DC motor with bi‐directional 12V drive circuit ______________ Stepper Motor at 5V with 2 sets of bi‐directional phases ME430 Mechatronics: Lab 2 1 Part (A) Driving LEDs and DC Motors by Sourcing and Sinking Current from a Logic Gate In the “Intro to Transistors” video lecture, you also learned about sourcing and sinking current from a logic gate. Sinking the current allows much higher current levels. In this part we would like to build the two configurations and verify that they work. (1) Sourcing Current First, rebuild the simple current sourcing circuit you built for the beginning of Lab 1. Make sure that one works before you move on. Recall that it looks like We would like to modify the circuit to also drive (by sourcing the current from the 7404) a DC (brushed) motor. These are the ordinary‐looking silver‐grey motors. -
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package
2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch TO−66 Type Package Description: The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose amplifier, low−frequency switching and hammer driver applications. Features: D High DC Current Gain: hFE = 3000 Typ @ IC = 2A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO ...................................................... 60V Collector−Base Voltage, VCB ......................................................... 60V Emitter−Base Voltage, VEB ........................................................... 5V Collector Current, IC Continuous ................................................................... 4A Peak ........................................................................ 8A Base Current, IB ................................................................. 80mA Total Power Dissipation (TC = +25C), PD ............................................ 50W Derate Above 25C..................................................... 0.286W/C Operating Junction Temperature Range, TJ ..................................−65 to +200C Storage Temperature Range, Tstg ..........................................−65 to +200C Thermal Resistance, Junction−to−Case, RthJC ..................................... 3.5C/W Electrical Characteristics: (TC = +25C unless -
ULN2803A Darlington Transistor Arrays Datasheet
Product Order Technical Tools & Support & Folder Now Documents Software Community ULN2803A SLRS049H –FEBRUARY 1997–REVISED FEBRUARY 2017 ULN2803A Darlington Transistor Arrays 1 Features 3 Description The ULN2803A device is a 50 V, 500 mA Darlington 1• 500-mA-Rated Collector Current (Single Output) transistor array. The device consists of eight NPN Darlington pairs that feature high-voltage outputs with • High-Voltage Outputs: 50 V common-cathode clamp diodes for switching • Output Clamp Diodes inductive loads. The collector-current rating of each • Inputs Compatible With Various Types of Logic Darlington pair is 500 mA. The Darlington pairs may be connected in parallel for higher current capability. 2 Applications Applications include relay drivers, hammer drivers, • Relay Drivers lamp drivers, display drivers (LED and gas discharge), line drivers, and logic buffers. The • Hammer Drivers ULN2803A device has a 2.7-kΩ series base resistor • Lamp Drivers for each Darlington pair for operation directly with • Display Drivers (LED and Gas Discharge) TTL or 5-V CMOS devices. • Line Drivers Device Information(1) • Logic Buffers PART NUMBER PACKAGE BODY SIZE (NOM) • Stepper Motors ULN2803ADW SOIC (18) 11.55 mm × 7.50 mm • IP Camera (1) For all available packages, see the orderable addendum at • HVAC Valve and LED Dot Matrix the end of the data sheet. Logic Diagram 1 18 1B 1C 2 17 2B 2C 3 16 3B 3C 4 15 4B 4C 5 14 5B 5C 6 13 6B 6C 7 12 7B 7C 8 11 8B 8C 10 COM 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. -
Radiation Characterisation for New Tantalum Polymer Capacitors
1 Radiation Characterisation for New Tantalum Polymer Capacitors P. Martin, I. Lopez-Calle, E. Muñoz, M. Domínguez, M. Morales, D. Núñez, D. Lacombe, Y. Morilla, C. Mota, J. Pedroso. (polyethylenedioxythiophene), with same successful results Abstract —Polymer tantalum capacitor technology was than standard manganese dioxide tantalum capacitors [1]. developed in response to demands from the market to lower the The radiation test has been performed at RadLab [2] [3] ESR of tantalum capacitors while preserving their small case radiation facility from ALTER TECHNOLOGY, which is size and high reliability. The technology is promising in several awarded with ISO-17025 accreditation to perform radiation aspects. The higher quality interface between the dielectric and test according to ESCC 22900, MIL-STD-750 and MIL-STD- the polymer cathode increases the breakdown voltage of the 883 TM1019, including the dosimetry process; and the device, as well as reducing its DC leakage current, even at extreme radiation exposure conditions. laboratory suitability for MIL-STD-883 and MIL-STD-750 provided by the Defense Logistics Agency (DLA). These I. INTRODUCTION accreditations make this state-of-the-art radiation facility one of a kind. Passive parts and particularly capacitors offering for space applications have evolved significantly during past few years. II. DESCRIPTION OF THE DEVICES UNDER TEST New materials and structures aiming to offer advanced electrical performance and improving the ratio capacitance A. Solid-electrolyte tantalum capacitors per volume of these components have been introduced Solid-electrolyte tantalum capacitors were first developed recently. and commercially produced in the 1950s. They represented a Additionally, future missions approved by ESA where high quantum leap forward in miniaturization and reliability over levels of radiation are involved, and the lack of experimental data corresponding to these new technologies in families existing wound-foil wet electrolytic capacitors. -
Operator Manual
OPERATOR MANUAL , , , " FOR MODELS HTR 1005B·18 . HTR 1005B·1 E8 HTR 1005B·1J8 HUNTRON INSTRUMENTS. INC.• 15123 Hwy. 99 North. Lynnwood. WA 98037. (800)426-9265 • (206)743-3171 • Telex 152951 TABLE OF CONTENTS SECTION 1 - GENERAL INFORMATION 1.1 ABOUT THIS MANUAL 1.2 TRACKER DESCRIPTION , 1-1 1.3 PRINCIPLES OF TRACKER OPERATION , 1-3 1.3,1 Tracker Test Signal ,, ,, 1-3 1.3.2 Horizontal and Vertical Deflection of the Display " , 1-3 1.3.3 Short and Open Circuit Displays .",' , , 1-4 SECTION 2 - TRACKER OPERATION 2.1 GENERAL , ,,, 2-1 2.2 CONTROLS AND INDICATORS , .. ,., , 2-1 2.3 ALTERNATE MODE OPERATION , 2-3 2.4 FUSE REPLACEMENT ,', ' 2-3 SECTION 3 - TESTING DIODES 3.1 THE SEMICONDUCTOR DIODE AND ITS CHARACTERISTICS 3-1 3.1.1 Diode Symbol and Definition ., , , 3-1 3.1.2 The Volt-Ampere Characteristic , , , 3-2 3.2 SILICON RECTIFIER DIODES. , ,, 3-2 3.2.1 Patterns ofa Good Diode 3-2 3.2.2 Patterns ofa Defective Diode ," 3-3 3.3 HIGH VOLTAGE SILICON DIODES , , 3-3 3.4 RECTIFIER BRIDGES ,, 3-5 3.5 LIGHT-EMITTING DIODES 3-8 3.6 ZENER DIODES 3-8 SECTION 4 - TESTING TRANSISTORS 4.1 BIPOLAR JUNCTION TRANSISTORS ,,,,,,,, ,, 4-1 4,2 NPN BIPOLAR TRANSISTORS ,., .. , , 4-1 4,2.1 B-E Junction Testing ,' ,, "., '" ' 4-2 4.2.2 C-E Connection Testing , , 4-2 4.2.3 C-B Junction Testing , ,., 4-3 4.3 PNP BIPOLAR TRANSISTORS ,, , 4-4 4.4 POWER TRANSISTORS - NPN OR PNP 4-5 4.5 DARLINGTON TRANSISTORS ., ,., ',.,., 4-5 4.6 JFET TRANSISTORS ,, 4-8 4.7 MOSFET TRANSISTORS , ,,,,,.,',,,.,, 4-9 4.7. -
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays
MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of http://onsemi.com industrial and consumer applications. Their high breakdown voltage and internal suppression diodes insure freedom from problems associated with inductive loads. Peak inrush currents to 500 mA PDIP−16 P SUFFIX permit them to drive incandescent lamps. CASE 648 The MC1413, B with a 2.7 kW series input resistor is well suited for 16 systems utilizing a 5.0 V TTL or CMOS Logic. 1 Features SOIC−16 • Pb−Free Packages are Available* D SUFFIX 16 CASE 751B • NCV Prefix for Automotive and Other Applications Requiring Site 1 and Control Changes 1/7 MC1413, B ORDERING INFORMATION † 2.7 k Pin 9 Device Package Shipping MC1413D SOIC−16 48 Units/Rail 5.0 k MC1413DG SOIC−16 48 Units/Tube 3.0 k (Pb−Free) MC1413DR2 SOIC−16 2500 Tape & Reel MC1413DR2G SOIC−16 2500 Tape & Reel (Pb−Free) Figure 1. Representative Schematic Diagram MC1413P PDIP−16 25 Units/Rail MC1413PG PDIP−16 25 Units/Rail (Pb−Free) 1 16 MC1413BD SOIC−16 48 Units/Rail MC1413BDG SOIC−16 48 Units/Rail 2 15 (Pb−Free) MC1413BDR2 SOIC−16 2500 Tape & Reel 3 14 MC1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) 4 13 MC1413BP PDIP−16 25 Units/Rail MC1413BPG PDIP−16 25 Units/Rail 5 12 (Pb−Free) NCV1413BDR2 SOIC−16 2500 Tape & Reel 6 11 NCV1413BDR2G SOIC−16 2500 Tape & Reel (Pb−Free) 7 10 †For information on tape and reel specifications, including part orientation and tape sizes, please 8 9 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. -
Vysoké Učení Technické V Brně Dielektrické
VYSOKÉ UČENÍ TECHNICKÉ V BRNĚ BRNO UNIVERSITY OF TECHNOLOGY FAKULTA ELEKTROTECHNIKY A KOMUNIKAČNÍCH TECHNOLOGIÍ ÚSTAV FYZIKY FACULTY OF ELECTRICAL ENGINEERING AND COMMUNICATION DEPARTMENT OF PHYSICS DIELEKTRICKÉ VLASTNOSTI TENKÝCH VRSTEV OXIDŮ TANTALU A NIOBU DIELECTRIC PROPERTIES OF THIN TANTALUM AND NIOBIUM OXIDE LAYERS ZKRÁCENÁ VERZE DOKTORSKÉ PRÁCE SHORT VERSION OF DOCTORAL THESIS AUTHOR Ing. INAS ABUETWIRAT AUTOR PRÁCE SUPERVISOR Assoc. Prof. Ing. KAREL LIEDERMANN, Ph.D, MEng. VEDOUCÍ PRÁCE BRNO 2014 ABUETWIRAT, I. Dielectric properties of thin tantalum and niobium oxide layer. Brno: Brno University of Technology, Faculty of Electrical Engineering and Communication, 2014, 32 p., Research Advisor: Karel Liedermann, PhD, MEng, Assoc. Prof. © Inas Abuetwirat, 2014 KLÍČOVÁ SLOVA Dielektrická spektroskopie, dielektrická relaxace, dielektrická spektra, elektrická vodivost, oxid tantalu, oxid niobu. KEYWORDS Dielectric spectroscopy, dielectric relaxation, dielectric spectra, electrical conductivity, tantalum oxide, niobium oxide. Depository of the manuscript: Department of Science and Research, Dean’s Office, FEEC BUT Brno, Technická 10, 616 Brno. Contents 1. INTRODUCTION............................................................................................................. 1 2. MATERIAL UNDER STUDY......................................................................................... 2 2.1. Tantalum pent-oxide (Ta2O5) ...................................................................................... 2 2.2. Niobium pent-oxide -
Darlington Class Ab Pushpull Amplifier
© 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company DARLINGTON CLASS AB PUSHPULL AMPLIFIER • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Push Pull Amplifier When an amplifier is biased at cutoff so that it operates in the linear region for 180 degree of the input cycle and is in cutoff for 180 degree, it is a class B amplifier. Class AB amplifiers are biased to conduct for slightly more than 180 degree. The primary advantage of a class B or class AB amplifier over a class A amplifier is that either one is more efficient than a class A amplifier; you can get more output power for a given amount of input power. A disadvantage of class B or class AB is that it is more difficult to implement the circuit in order to get a linear reproduction of the input waveform. The term push-pull refers to a common type of class B or class AB amplifier circuit in which two transistors are used on alternating half- cycles to reproduce the input waveform at the output. • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Darlington Push Pull Amplifier The complementary Darlington, also known as the Sziklai pair, it is similar to the traditional Darlington pair except it uses complementary transistors (one npn and one pnp). The complementary Darlington is used when it is determined that output power transistors of the same type should be used (both npn or both pnp). Class AB push-pull amplifier consists of two npn output power transistors, The upper part of the push-pull configuration is a traditional Darlington, and the lower part is a complementary Darlington. -
President's Letter
PRESIDENT’S LETTER Dear Members and Friends, With summer waning and autumn fast approaching this can mean only one thing, the General Assembly and associated technical meeting is not far away. All indications are that this will be a most successful event based on the number of registrants and applicants for new membership. The site of this year’s General Assembly, the historic city of York, in northeast England, looks to be an excellent place to catch up with “old” friends and make new ones. And for the accompanying participants, there is a wealth of things to do and see during the day whether it is going on the prearranged tours or just leisurely strolling the city’s cobblestoned streets. I am certain that those of us involved in the meeting will be keenly interested in hearing what our spouses, partners and friends will have seen and experienced during their daily sojourns. As for the discussions we will have at the General Assembly, the breadth of the technical presentations, the panel session on the progress in the area of Conflict Minerals as well as the market presentation by Dennis Zogbi, President of Paumanok Publications, I am certain there is more than enough technical and market content to keep everyone actively engaged in the meeting. The Executive Committee of the T.I.C. appreciates the time and effort that goes into preparing the presentations and accompanying documentations and thanks in advance all those who have committed in this manner to making this a very successful meeting. I thank everyone who has worked with me over the last year. -
Products Catalog Index
Products Catalog Index PART NO. MANUFACTURER DESCRIPTION URL PRICE NRSA471M25V10x16TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA471M25V10x16TRF-datasheet.html QUOTE NRSA471M35V10x20TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA471M35V10x20TRF-datasheet.html QUOTE NRSA472M10V16x25TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA472M10V16x25TRF-datasheet.html QUOTE NRSA472M16V16x31TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA472M16V16x31TRF-datasheet.html QUOTE NRSA472M25V18x36TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA472M25V18x36TRF-datasheet.html QUOTE NRSA472M35V22x36TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA472M35V22x36TRF-datasheet.html QUOTE NRSA472M50V22x42TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA472M50V22x42TRF-datasheet.html QUOTE NRSA4R7M100V5x11TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA4R7M100V5x11TRF-datasheet.html QUOTE NRSA4R7M50V5x11TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA4R7M50V5x11TRF-datasheet.html QUOTE NRSA682M10V16x31TRF NIC Components Miniature Aluminum Electrolytic Capacitor http://www.searchdatasheet.com/NRSA682M10V16x31TRF-datasheet.html QUOTE NRSZ4R7M50V5x11 -
Design of a 100W Power Amplifier with Darlington Complementary Symmetry Output Power Transistor
UNIVERSITY OF NAIROBI FACULTY OF ENGINEERING DEPARTMENT OF ELECTRICAL AND INFORMATION ENGINEERING DESIGN OF A 100W POWER AMPLIFIER WITH DARLINGTON COMPLEMENTARY SYMMETRY OUTPUT POWER TRANSISTOR PROJECT INDEX: 113 SUBMITTED BY: KOLL JACKSON RISONA F17/37338/2010 SUPERVISOR: MR. S. L OGABA EXAMINER: PROF ABUNGU PROJECT SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENT FOR THE AWARD OF THE DEGREE OF BACHELOR OF SCIENCE IN ELECTRICAL AND ELECTRONIC ENGINEERING OF THE UNIVERSITY OF NAIROBI 2016 i DECLARATION OF ORIGINALITY I, KOLL JACKSON RISONA (F17/37338/2010), hereby declare that this project is my original work. To the best of my knowledge, the work presented here has not been presented for a degree in any other Institution of Higher Learning. ………………………………………… ………………… Name of student Date This project has been submitted for examination with my approval as university supervisor. ………………………………………… ………………… Name of supervisor Date ii DEDICATION I dedicate this project to my parents Mr. and Mrs. John Kol ole Sawi, my siblings and friends for their continued and undying support throughout this journey and I am forever grateful for the opportunity they have given me to achieve my dreams. iii ACKNOWLEDGEMENT I would like to express my gratitude towards my project supervisor Mr. S.L. Ogaba of The Nairobi University and my colleagues for their guidance and constant supervision as well as providing necessary information regarding the project and also for their support in completing the project. I am also grateful to electronics lab technicians for giving me permission to use their facilities. iv ABSTRACT An amplifier is an electronic device used to magnify the value of a signal. -
Highly Increased Capacitance and Thermal Stability of Anodic Oxide Films on Oxygen-Incorporated Zr-Ti Alloy
Title Highly increased capacitance and thermal stability of anodic oxide films on oxygen-incorporated Zr-Ti alloy Author(s) Habazaki, H.; Kobayashi, K.; Tsuji, E.; Zhu, C.; Aoki, Y.; Nagata, S. Journal of Solid State Electrochemistry, 21(10), 2807-2816 Citation https://doi.org/10.1007/s10008-017-3607-2 Issue Date 2017-10 Doc URL http://hdl.handle.net/2115/71554 Rights "The final publication is available at link.springer.com". Type article (author version) File Information ZrTi_ox_rev.pdf Instructions for use Hokkaido University Collection of Scholarly and Academic Papers : HUSCAP Highly increased capacitance and thermal stability of anodic oxide films on oxygen-incorporated Zr-Ti alloy H. Habazaki1,*, K. Kobayashi1, E. Tsuji1, C. Zhu1, Y. Aoki1, S. Nagata2 1Division of Applied Chemistry, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan 2Institute for Materials Research, Tohoku University, 2-1-1, katahira, Aoba-ku, Sendai 980-8577, Japan *Corresponding author: Phone & Fax: +81-11-706-6575, e-mail: [email protected] 1 Abstract Heat treatment of Zr-24 at% Ti alloy with barrier-type dielectric anodic oxide films was conducted at 473 K in air to examine the thermal stability of the dielectric oxide films for possible electrolytic capacitor application. The anodic oxide film was formed by anodizing of the alloy at 50 V for 30 min in 0.1 mol dm-3 ammonium pentaborate electrolyte. The anodic oxide film of 125 nm thickness was crystalline, containing both monoclinic and tetragonal ZrO2 phase. It was found that marked thickening of the oxide film with generation of cracks occurred during heat treatment at 473 K.