Hybrid integrated semiconductor lasers with silicon nitride feedback circuits Klaus-J. Boller1,3,*, Albert van Rees1, Youwen Fan1,2, Jesse Mak1, Rob E.M. Lammerink1, Cornelis A.A. Franken1, Peter J.M. van der Slot1, David A.I. Marpaung1, Carsten Fallnich3,1, J¨ornP. Epping2, Ruud M. Oldenbeuving2, Dimitri Geskus2, Ronald Dekker2, Ilka Visscher2, Robert Grootjans2, Chris G.H. Roeloffzen2, Marcel Hoekman2, Edwin J. Klein2, Arne Leinse2, and Ren´eG. Heideman2 1Laser Physics and Nonlinear Optics, Mesa+ Institute for Nanotechnology, Department for Science and Technology, Applied Nanophotonics, University of Twente, Enschede, The Netherlands 2LioniX International BV, Enschede, The Netherlands 3University of M¨unster,Institute of Applied Physics, Germany *Corresponding author:
[email protected] December 19, 2019 Abstract Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compati- bility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 µm wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser. 1 Introduction The extreme coherence of light generated with lasers has been the key to great progress in science, for instance in testing natures fundamental symmetries [1, 2], properties of matter [3, 4], or for the detection of gravitational waves [5].