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Laser Linewidth, Frequency Noise and Measurement
Laser Linewidth, Frequency Noise and Measurement WHITEPAPER | MARCH 2021 OPTICAL SENSING Yihong Chen, Hank Blauvelt EMCORE Corporation, Alhambra, CA, USA LASER LINEWIDTH AND FREQUENCY NOISE Frequency Noise Power Spectrum Density SPECTRUM DENSITY Frequency noise power spectrum density reveals detailed information about phase noise of a laser, which is the root Single Frequency Laser and Frequency (phase) cause of laser spectral broadening. In principle, laser line Noise shape can be constructed from frequency noise power Ideally, a single frequency laser operates at single spectrum density although in most cases it can only be frequency with zero linewidth. In a real world, however, a done numerically. Laser linewidth can be extracted. laser has a finite linewidth because of phase fluctuation, Correlation between laser line shape and which causes instantaneous frequency shifted away from frequency noise power spectrum density (ref the central frequency: δν(t) = (1/2π) dφ/dt. [1]) Linewidth Laser linewidth is an important parameter for characterizing the purity of wavelength (frequency) and coherence of a Graphic (Heading 4-Subhead Black) light source. Typically, laser linewidth is defined as Full Width at Half-Maximum (FWHM), or 3 dB bandwidth (SEE FIGURE 1) Direct optical spectrum measurements using a grating Equation (1) is difficult to calculate, but a based optical spectrum analyzer can only measure the simpler expression gives a good approximation laser line shape with resolution down to ~pm range, which (ref [2]) corresponds to GHz level. Indirect linewidth measurement An effective integrated linewidth ∆_ can be found by can be done through self-heterodyne/homodyne technique solving the equation: or measuring frequency noise using frequency discriminator. -
High-Power Solid-State Lasers from a Laser Glass Perspective
LLNL-JRNL-464385 High-Power Solid-State Lasers from a Laser Glass Perspective J. H. Campbell, J. S. Hayden, A. J. Marker December 22, 2010 Internationakl Journal of Applied Glass Science Disclaimer This document was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor Lawrence Livermore National Security, LLC, nor any of their employees makes any warranty, expressed or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States government or Lawrence Livermore National Security, LLC. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or Lawrence Livermore National Security, LLC, and shall not be used for advertising or product endorsement purposes. High-Power Solid-State Lasers from a Laser Glass Perspective John H. Campbell, Lawrence Livermore National Laboratory, Livermore, CA Joseph S. Hayden and Alex Marker, Schott North America, Inc., Duryea, PA Abstract Advances in laser glass compositions and manufacturing have enabled a new class of high-energy/high- power (HEHP), petawatt (PW) and high-average-power (HAP) laser systems that are being used for fusion energy ignition demonstration, fundamental physics research and materials processing, respectively. The requirements for these three laser systems are different necessitating different glasses or groups of glasses. -
Saturable Absorber Mirrors for Passive Mode-Locking
Saturable Absorber Mirrors For Passive Mode-locking R. Hohmuth1 3, G. Paunescu2, J. Hein2, C. H. Lange3, W. Richter1 3, 1 Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Germany, tel: +493641947444, fax: +493641947442, [email protected] 2 Institut fuer Optik und Quantenelektronik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena, Germany 3 BATOP GmbH, Th.-Koerner-Str. 4, 99425 Weimar, Germany Introduction Saturable Absorber Mirror (SAM) Saturable absorber mirrors (SAMs) are inexpensive and schematic laser set-up compact devices for passive mode-locking of diode pumped solid state lasers. Such laser systems can provide ultrashort cavity, length L -cavity with gain medium pulse trains with high repetition rates. Typical values for pulse pulse -high reflective mirror and TRT=2L/c ) t output mirror with partially ( duration ranging from 100 fs up to 10 ps. For instance a I y t transmission i s Nd:YAG laser can be mode-locked with pulse duration of 8 ps n e -saturable absorber as t n and mean output power of 6 W. I modulator On this poster we present results for a Yb: KYW laser passive =>pulse trains spaced by mode-locked by SAMs with three different modulation depths round-trip time TRT=2L/c time t between 0.6% and 2.0%. SAMs were prepared by solid- gain medium high reflective mirror (pumped e.g. output mirror source molecular beam epitaxy with a low-temperature (LT) with saturable absorber by laser diode) (SAM) grown InGaAs absorbing quantum well. LT InGaAs quantum well SAM design SAM reflection spectrum Ta O or SiO / dielectric cover Requirements for passive mode- 25 2 conduction 71.2 nm GaAs / barrier E 7 nm c1 71.2 nm GaAs / barrier locking band Ec LT InGaAs 74.7 nm GaAs The mode-locking regime is stable agaist the onset of quantum well InGaAs 88.4 nm AlAs multiple pulsing as long as the pulse duration is smaller energy : 25x Bragg mirror than t . -
Narrow Line Width Frequency Comb Source Based on an Injection-Locked III-V-On-Silicon Mode-Locked Laser
Narrow line width frequency comb source based on an injection-locked III-V-on-silicon mode-locked laser Sarah Uvin,1;2;∗ Shahram Keyvaninia,3 Francois Lelarge,4 Guang-Hua Duan,4 Bart Kuyken1;2 and Gunther Roelkens1;2 1Photonics Research Group, Department of Information Technology, Ghent University - imec, Sint-Pietersnieuwstraat 41, 9000 Ghent, Belgium 2Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent, Belgium 3Fraunhofer Heinrich-Hertz-Institut Einsteinufer 37 10587, Berlin, Germany 4III-V lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA Leti, France ∗[email protected] Abstract: In this paper, we report the optical injection locking of an L-band (∼1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source. This technique allows us to reduce the MHz optical line width of the mode-locked laser longitudinal modes down to the line width of the source used for injection locking, 50 kHz. We show that more than 50 laser lines generated by the mode-locked laser are coherent with the narrow line width CW source. Two locking techniques are explored. In a first approach a hybrid mode-locked laser is injection-locked with a CW source. In a second approach, light from a modulated CW source is injected in a passively mode-locked laser cavity. The realization of such a frequency comb on a chip enables transceivers for high spectral efficiency optical communication. © 2016 Optical Society of America OCIS codes: (250.5300) Photonic integrated circuits; (140.4050) Mode-locked lasers. -
Arxiv:2106.00060V1 [Physics.Optics] 31 May 2021
Self-injection locking of the gain-switched laser diode Artem E. Shitikov1,∗ Valery E. Lobanov1, Nikita M. Kondratiev1, Andrey S. Voloshin2, Evgeny A. Lonshakov1, and Igor A. Bilenko1,3 1Russian Quantum Center, 143026 Skolkovo, Russia 2Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), CH-1015 Lausanne, Switzerland and 3Faculty of Physics, Lomonosov Moscow State University, 119991 Moscow, Russia (Dated: April 2021) We experimentally observed self-injection locking regime of the gain-switched laser to high-Q optical microresonator. We revealed that comb generated by the gain-switched laser experiences a dramatic reduce of comb teeth linewidths in this regime. We demonstrated the Lorentzian linewidth of the comb teeth of sub-kHz scale as narrow as for non-switched self-injection locked laser. Such setup allows generation of high-contrast electrically-tunable optical frequency combs with tunable comb line spacing in a wide range from 10 kHz up to 10 GHz. The characteristics of the generated combs were studied for various modulation parameters - modulation frequency and amplitude, and for parameters, defining the efficiency of the self-injection locking - locking phase, coupling efficiency, pump frequency detuning. I. INTRODUCTION In this work, we developed the first microresonator stabilized gain-switched laser operating in the SIL Narrow-linewidth lasers are in increasing demand in regime. We demonstrated experimentally high-contrast science and bleeding edge technologies as they give a electrically tuned optical frequency combs with line competitive advantage in such areas as coherent com- spacing from 10 kHz to 10 GHz. It was revealed that munications [1], high-precision spectroscopy [2, 3], op- SIL leads to a frequency distillation of each comb teeth tical clocks [4, 5], ultrafast optical ranging [6–8] and and consequently increase the comb contrast. -
2.6 Q-Switched Erbium-Doped Fiber Laser
COPYRIGHT AND CITATION CONSIDERATIONS FOR THIS THESIS/ DISSERTATION o Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use. o NonCommercial — You may not use the material for commercial purposes. o ShareAlike — If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original. How to cite this thesis Surname, Initial(s). (2012) Title of the thesis or dissertation. PhD. (Chemistry)/ M.Sc. (Physics)/ M.A. (Philosophy)/M.Com. (Finance) etc. [Unpublished]: University of Johannesburg. Retrieved from: https://ujcontent.uj.ac.za/vital/access/manager/Index?site_name=Research%20Output (Accessed: Date). Development, characterisation and analysis of an active Q-switched fiber laser based on the modulation of a fiber Fabry-Perot tunable filter By KABOKO JEAN-JACQUES MONGA DISSERTATION Submitted for partial fulfillment of the requirements for the degree DOCTOR OF PHILOSOPHY in ELECTRICAL AND ELECTRONIC ENGINEERING SCIENCES in the FACULTY OF ENGINEERING at the UNIVERSITY OF JOHANNESBURG STUDY LEADERS: Dr. Rodolfo Martinez Manuel Pr. Johan Meyer April 2018 Abstract The field of fiber lasers and fiber optic devices has experienced a sustained rapid growth. In particular, all-fiber Q-switched lasers offer inherent advantages of relatively low cost, compact design, light weight, low maintenance, and increased robustness and simplicity over other fiber laser systems. In this thesis, a design of a new Q-switching approach in all-fiber based laser is proposed. -
Cavity Ring-Down Spectrometer for High-Fidelity Molecular Absorption Measurements
Journal of Quantitative Spectroscopy & Radiative Transfer 161 (2015) 11–20 Contents lists available at ScienceDirect Journal of Quantitative Spectroscopy & Radiative Transfer journal homepage: www.elsevier.com/locate/jqsrt Cavity ring-down spectrometer for high-fidelity molecular absorption measurements H. Lin a,b, Z.D. Reed a, V.T. Sironneau a, J.T. Hodges a,n a National Institute of Standards and Technology, Gaithersburg, MD, USA b National Institute of Metrology, Beijing 100029, China article info abstract Article history: We present a cavity ring-down spectrometer which was developed for near-infrared Received 26 January 2015 measurements of laser absorption by atmospheric greenhouse gases. This system has Received in revised form several important attributes that make it possible to conduct broad spectral surveys and 23 March 2015 to determine line-by-line parameters with wide dynamic range, and high spectral Accepted 24 March 2015 resolution, sensitivity and accuracy. We demonstrate a noise-equivalent absorption Available online 1 April 2015 coefficient of 4 Â 10 À12 cmÀ1 HzÀ1/2 and a signal-to-noise ratio of 1.5 Â 106:1 in an Keywords: absorption spectrum of carbon monoxide. We also present high-resolution measurements Cavity ring-down spectroscopy of trace methane in air spanning more than 1.2 THz and having a frequency axing with an Line shape uncertainty less than 100 kHz. Finally, we discuss how this system enables stringent tests Carbon dioxide of advanced line shape models. To illustrate, we measured an air-broadened carbon Speed dependent effects dioxide transition over a wide pressure range and analyzed these data with a multi- spectrum fit of the partially correlated, quadratic speed-dependent Nelkin–Ghatak profile. -
Advanced Semiconductor Lasers
INSTITUT NATIONAL DES SCIENCES APPLIQUÉES ADVANCED SEMICONDUCTOR LASERS Frédéric Grillot Université Européenne de Bretagne Laboratoire CNRS FOTON 20 avenue des buttes de Coesmes 35043 Rennes Cedex [email protected] Second Version - Year 2010 2 Contents 1 Basics of Semiconductor Lasers 7 1.1 Principle of Operation . .7 1.1.1 Radiative Transitions in a Semiconductor . .7 1.1.2 Optical Gain and Laser Cavity . .9 1.1.3 Output Light-Current Characteristic . 11 1.1.4 Carrier Confinement . 13 1.1.5 Optical Field Confinement and Spatial Modes . 15 1.1.6 Near- and Far-Field Patterns . 17 1.2 Quantum Well Lasers . 18 1.3 Quantum Dot Lasers . 20 1.4 Single-Frequency Lasers . 23 1.4.1 Short-Cavity Lasers . 23 1.4.2 Coupled-Cavity Lasers . 23 1.4.3 Injection-Locked Lasers . 24 1.4.4 DBR Lasers . 25 1.4.5 DFB Lasers . 26 2 Advances in Measurements of Physical Parameters of Semiconductor Lasers 31 2.1 Measurements of the Optical Gain . 31 2.1.1 Determination of the Optical Gain from the Amplified Spontaneous Emission . 32 2.1.2 Determination of the Optical Gain from the True Spontaneous Emission 34 2.2 Measurement of the Optical Loss . 36 2.3 Measurement of the Carrier Leakage in Semiconductor Lasers . 37 2.3.1 Optical Technique of Studying the Carrier Leakage . 37 2.3.2 Electrical Technique of Studying Carrier Leakage . 38 2.4 Electrical and Optical Measurements of RF Modulation Response below Thresh- old.......................................... 40 2.4.1 Determination of the Carrier Lifetime from the Device Impedance . -
Arxiv:1911.10820V2 [Physics.Optics] 18 Dec 2019
Hybrid integrated semiconductor lasers with silicon nitride feedback circuits Klaus-J. Boller1,3,*, Albert van Rees1, Youwen Fan1,2, Jesse Mak1, Rob E.M. Lammerink1, Cornelis A.A. Franken1, Peter J.M. van der Slot1, David A.I. Marpaung1, Carsten Fallnich3,1, J¨ornP. Epping2, Ruud M. Oldenbeuving2, Dimitri Geskus2, Ronald Dekker2, Ilka Visscher2, Robert Grootjans2, Chris G.H. Roeloffzen2, Marcel Hoekman2, Edwin J. Klein2, Arne Leinse2, and Ren´eG. Heideman2 1Laser Physics and Nonlinear Optics, Mesa+ Institute for Nanotechnology, Department for Science and Technology, Applied Nanophotonics, University of Twente, Enschede, The Netherlands 2LioniX International BV, Enschede, The Netherlands 3University of M¨unster,Institute of Applied Physics, Germany *Corresponding author: [email protected] December 19, 2019 Abstract Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compati- bility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 µm wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser. 1 Introduction The extreme coherence of light generated with lasers has been the key to great progress in science, for instance in testing natures fundamental symmetries [1, 2], properties of matter [3, 4], or for the detection of gravitational waves [5]. -
Laser Linewidth at the Sub-Hertz Level
NPL Report CLM 8 September1999 Laser Linewidth at the sub-Hertz Level M. Roberts P. Thy lor P. Gill Centre for Length Metrology National Physical Laboratory Teddington, Middlesex, TWll OLW Abstract A number of fields require state of the art low noise laser systems. The report has been written to aid the development of a laser source with a sub-hertz linewidth. The report brings together the most recent work in the field of laser stabilisation, along with a description of the rele- vant basic principles. There are explanations of the parameters used to describe laser noise and stability (power spectral density, Allan vari- ance, linewidth, modulation index). The effects of perturbation on a laser (plus reference cavity) system are discussed, including vibration, acoustic noise, thermal effects and opto-electrical considerations. The report concludes with a recommended laser system, drawing on the facts learnt during the process of writing this report. NPL Report CLM 8 @Crown Copyright 1999 Reproduced by permissionof the Controller of HMSO ISSN 1369-6777 Extracts from this report may be reproduced provided the source is acknowledged and the extract is not taken out of context Authorised for publication on behalf of the Managing Director of NPL by Dr David Robinson 1 Introd uction 1 1.11.21.3 AssumptionsOmissionsLaser Noise Requirements. ... 1 2 2 1.4 Choice of Laser/Servo Electronics 3 1.61.51.7 TheReferenceReport State summary.List.of the Art. 4 4 6 2 Noise 9 2.1 Measurementtechniques """"""' "'.. 9 2.32.2 2.3.12.1.12.2.12.2.22.2.4FrequencyCharacterisation2.2.3 AllanvarianceRelatingTheRelatingModulationPower Modulationfour Spectral Spectralmeasurementof index,Frequency Density.Analysis. -
Laser Output Couplers
Nd:YAG LASER OPTICS LASER OUTPUT COUPLERS An output coupler is a partially reflecting dielectric mirror used in a SUBSTRATE laser cavity. It transmits a part of the circulating intracavity power for Material UV grade Fused Silica or BK7 glass generating a useful output from the laser. S1 Surface Flatness λ/10 typical at 633 nm A low transmission output coupler leads to a low laser threshold, but S1 Surface Quality 20 –10 scratch & dig (MIL-PRF-13830B) also possibly to poor laser efficiency if the losses due to output coupling S2 Surface Flatness λ/10 typical at 633 nm do not dominate over other parasitic losses in the laser cavity. The S2 Surface Quality 20 –10 scratch & dig (MIL-PRF-13830B) output coupler transmission is often chosen to maximize the achieved Diameter Tolerance +0.00 mm; -0.12 mm output power, although its optimum value may be lower or higher if Thickness Tolerance ±0.25 mm there are other design purposes (minimizing the intracavity intensities Parallelism 30 arcsec or suppressing Q-switching instabilities in a passively mode-locked Chamfer 0.3 mm at 45° typical laser). COATING Technology Electron beam multilayer dielectric Adhesion and Durability Per MIL-C-675A. Insoluble in lab solvents Clear Aperture Exceeds central 85% of diameter OPTICS LASER :YAG Damage Threshold: Nd BK7 >3 J/cm2, 8 nsec pulse, 1064 nm typical UV FS >6 J/cm2, 8 nsec pulse, 1064 nm typical Coated Surface Flatness λ/10 at 633 nm over clear aperture Angle of Incidence 0 – 8° (normal) Back side antireflection coated R < 0.2% LASER OUTPUT COUPLERS SIZE -
Short Wave Infrared Cavity Ring Down Spectroscopy (SWIR CRDS) Sensor
PNNL-14475 Chemical Sensing Using Infrared Cavity Enhanced Spectroscopy: Short Wave Infrared Cavity Ring Down Spectroscopy (SWIR CRDS) Sensor R. M. Williams J.S. Thompson W.W. Harper T.L. Stewart P.M. Aker October 2003 Prepared for the U.S. Department of Energy under Contract DE-AC06-76RL01830 DISCLAIMER This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor Battelle Memorial Institute, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof, or Battelle Memorial Institute. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. PACIFIC NORTHWEST NATIONAL LABORATORY operated by BATTELLE for the UNITED STATES DEPARTMENT OF ENERGY under Contract DE-AC06-76RL01830 Printed in the United States of America Available to DOE and DOE contractors from the Office of Scientific and Technical Information, P.O. Box 62, Oak Ridge, TN 37831-0062; ph: (865) 576-8401 fax: (865) 576-5728 email: [email protected] Available to the public from the National Technical Information Service, U.S.