Schottky Diode VRRM = 25 V IFAV = 25 a High Performance Schottky Diode V = 0.45 V Low Loss and Soft Recovery F Single Diode Part Number

DSS25-0025B

Schottky Diode VRRM = 25 V IFAV = 25 A High Performance Schottky Diode V = 0.45 V Low Loss and Soft Recovery F Single Diode Part number

DSS25-0025B 3 1

Backside: cathode

Features / Advantages: Applications: Package: ● Very low Vf ● Rectifiers in switch mode power ● Housing: TO-220 ● Extremely low switching losses supplies (SMPS) ●rIndustry standard outline ● low Irm values ● Free wheeling diode in low voltage ●rEpoxy meets UL 94V-0 ● Improved thermal behaviour converters ● ● High reliability circuit operation rRoHS compliant ● Low voltage peaks for reduced protection circuits ● Low noise switching R a t i n g s Symbol Definition snoitidnoC min. typ. max. tinU

VRRM max. repetitive reverse voltage TVJ °C=25 25 V

IR reverse current VR = 25V TVJ = 25 C° 20 mA

VR = 25V TVJ = 100°C 80 Am

V F forward voltage IF =25 A TVJ =25 °C 0.52 V

IF =50 A 0.67 V

IF =25 A TVJ =125 °C 0.45 V

IF =50 A 0.66 V

IFAV average forward current rectangular, d = 0.5 TC = 125°C 25 A

VF0 threshold voltage TVJ = 150°C 0.21 V for power loss calculation only r F slope resistance 8.8 mΩ

R thJC thermal resistance junction to case 1.40 K/W

TVJ virtual junction temperature -55 150 °C

Ptot total power dissipation TC 25°C= 90 W

IFSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45°C 330 A

EAS non-repetitive avalanche energy I AS =20 A; L =100 µH TVJ = °C25 20 mJ

IAR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz 2 A

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20071001b

Ratings Symbol Definition Conditions min. typ. max. Unit 1) IRMS RMS current per pin 35 A

RthCH thermal resistance case to heatsink 0.50 K/W

Tstg storage temperature -55 150 °C Weight 2 g mounting torque M D 0.4 0.8 Nm F mounting force with clip 20 60 N C

1) I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside.

Product Marking

Marking on product abcdef

Logo YYWW

DateCode Assembly Code XXXXXX

Ordering Part Name Marking on Product Delivering Mode Base Qty Code Key Standard DSS25-0025B DSS25-0025B Tube 50 475114

IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 20071001b

Outlines TO-220

IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 20071001b

100 10000 1000 T =150°C A mA VJ pF I R 100 125°C CT IF

100°C 10 10 1000 75°C 1 TVJ = 150°C 50°C 125°C 25°C 0.1 25°C

TVJ=25°C 1 0.01 100 0.0 0.2 0.4 0.6 V 0 5 10 15 20V 25 0 5 10 15 20V 25 V VF R VR Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current Fig. 3 Typ. junction capacitance

drop characteristics IR vs. reverse voltage VR CT vs. reverse voltage VR

40 20

A W P(AV) 30 15 d=0.5 DC IF(AV)

d= 20 10 DC 0.5 0.33 0.25 10 5 0.17 0.08

0 0 04080120160°C 0102030A

TC IF(AV)

Fig. 4 Avg. forward current IF(AV) Fig. 5 Forward power loss

vs. case temperature TC characteristics

1 D=0.5 K/W 0.33 0.25 ZthJC 0.17

0.08 Single Pulse 0.1

DSS 25-0025B Note: All curves are per diode 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles

IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 20071001b