DSS25-0025B Schottky Diode VRRM = 25 V IFAV = 25 A High Performance Schottky Diode V = 0.45 V Low Loss and Soft Recovery F Single Diode Part number DSS25-0025B 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf ● Rectifiers in switch mode power ● Housing: TO-220 ● Extremely low switching losses supplies (SMPS) ●rIndustry standard outline ● low Irm values ● Free wheeling diode in low voltage ●rEpoxy meets UL 94V-0 ● Improved thermal behaviour converters ● ● High reliability circuit operation rRoHS compliant ● Low voltage peaks for reduced protection circuits ● Low noise switching R a t i n g s Symbol Definition snoitidnoC min. typ. max. tinU VRRM max. repetitive reverse voltage TVJ °C=25 25 V IR reverse current VR = 25V TVJ = 25 C° 20 mA VR = 25V TVJ = 100°C 80 Am V F forward voltage IF =25 A TVJ =25 °C 0.52 V IF =50 A 0.67 V IF =25 A TVJ =125 °C 0.45 V IF =50 A 0.66 V IFAV average forward current rectangular, d = 0.5 TC = 125°C 25 A VF0 threshold voltage TVJ = 150°C 0.21 V for power loss calculation only r F slope resistance 8.8 mΩ R thJC thermal resistance junction to case 1.40 K/W TVJ virtual junction temperature -55 150 °C Ptot total power dissipation TC 25°C= 90 W IFSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45°C 330 A EAS non-repetitive avalanche energy I AS =20 A; L =100 µH TVJ = °C25 20 mJ IAR repetitive avalanche current VA = 1.5·VR typ.; f = 10 kHz 2 A IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per diode unless otherwise specified 20071001b © 2007 IXYS all rights reserved DSS25-0025B Ratings Symbol Definition Conditions min. typ. max. Unit 1) IRMS RMS current per pin 35 A RthCH thermal resistance case to heatsink 0.50 K/W Tstg storage temperature -55 150 °C Weight 2 g mounting torque M D 0.4 0.8 Nm F mounting force with clip 20 60 N C 1) I RMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Marking on product abcdef Logo YYWW DateCode Assembly Code XXXXXX Ordering Part Name Marking on Product Delivering Mode Base Qty Code Key Standard DSS25-0025B DSS25-0025B Tube 50 475114 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 20071001b © 2007 IXYS all rights reserved DSS25-0025B Outlines TO-220 IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 20071001b © 2007 IXYS all rights reserved DSS25-0025B 100 10000 1000 T =150°C A mA VJ pF I R 100 125°C CT IF 100°C 10 10 1000 75°C 1 TVJ = 150°C 50°C 125°C 25°C 0.1 25°C TVJ=25°C 1 0.01 100 0.0 0.2 0.4 0.6 V 0 5 10 15 20V 25 0 5 10 15 20V 25 V VF R VR Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current Fig. 3 Typ. junction capacitance drop characteristics IR vs. reverse voltage VR CT vs. reverse voltage VR 40 20 A W P(AV) 30 15 d=0.5 DC IF(AV) d= 20 10 DC 0.5 0.33 0.25 10 5 0.17 0.08 0 0 04080120160°C 0102030A TC IF(AV) Fig. 4 Avg. forward current IF(AV) Fig. 5 Forward power loss vs. case temperature TC characteristics 2 1 D=0.5 K/W 0.33 0.25 ZthJC 0.17 0.08 Single Pulse 0.1 DSS 25-0025B Note: All curves are per diode 0.01 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. * Data according to IEC 60747and per diode unless otherwise specified 20071001b © 2007 IXYS all rights reserved.