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FDFMA2P853 Integrated P-Channel Powertrench® MOSFET And Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. September 2008 FDFMA2P853 Integrated P-Channel PowerTrench July 2014 FDFMA2P853 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode General Description Features This device is designed specifically as a single package MOSFET: solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently RDS(ON) = 160 m: @ VGS = -2.5 V connected low forward voltage schottky diode for minimum conduction losses. RDS(ON) = 240 m: @ VGS = -1.8 V The MicroFET 2x2 package offers exceptional thermal Schottky: perfo rmance for it's physical size and is well suited to linear mode applications. VF < 0.46 V @ 500 mA Low Profile - 0.8 mm maximun - in the new package MicroFET 2x2 mm RoHS Compliant ® A NC D MOSFET and Schottky Diode A 1 6 C C D NC 2 5 G D 3 4 S MicroFET C G S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS MOSFET Drain-Source Voltage -20 V VGSS MOSFET Gate-Source Voltage r8V Drain Current -Continuous (Note 1a) -3.0 I A D -Pulsed -6 VRRM Schottky Repetitive Peak Reverse voltage 30V IO Schottky Average Forward Current (Note 1a) 1 A Power dissipation for Single Operation (Note 1a) 1.4 P W D Power dissipation for Single Operation (Note 1b) 0.7 o TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 C Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 R JA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 T oC/W RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 86 RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 140 Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity .853 FDFMA2P853 7inch 8mm 3000 units ©2008 Fairchild Semiconductor Corporation 1 FDFMA2P853 Rev. D3 (W) FDFMA2P853 Integrated P-Channel PowerTrench Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions MinTyp Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 PA –20 V 'BVDSS Breakdown Voltage Temperature I = –250 A, Referenced to 25 C mV/ C D P q –12 q 'TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 PA IGSS Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 PA –0.4 –0.7 –1.3 V 'VGS(th) Gate Threshold Voltage I = –250 A, Referenced to 25 C mV/ C D P q 2 q 'TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = –4.5 V, ID = –3.0 A 90 120 m: On–Resistance VGS = –2.5 V, ID = –2.5 A 120 160 VGS = –1.8 V, ID = –1.0 A 172 240 VGS= –4.5 V, ID = –3.0 A, TJ=125qC 118 160 ID(on) On–State Drain Current VGS = –4.5 V, VDS = –5 V –20 A gFS Forward Transconductance VDS = –5 V, ID = –3.0 A 7 S Dynamic Characteristics Ciss Input Capacitance VDS = –10 V, V GS = 0 V, 435 pF Coss Output Capacitance f = 1.0 MHz 80 pF Crss Reverse Transfer Capacitance 45 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = –10 V, ID = –1 A, 9 18 ns V = –4.5 V, R = 6 MOSFET and Schottky Diode tr Turn–On Rise Time GS GEN : 11 19 ns td(off) Turn–Off Delay Time 15 27 ns tf Turn–Off Fall Time 6 12 ns Qg Total Gate Charge VDS = –10 V, ID = –3.0 A, 4 6 nC VGS = –4.5 V Qgs Gate–Source Charge 0.8 nC Qgd Gate–Drain Charge 0.9 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.1 A VSD Drain–Source Diode Forward VGS = 0 V, IS = –1.1 A (Note 2) –0.8 –1.2 V Voltage trr Diode Reverse Recovery Time IF = –3.0 A, 17 ns dIF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge 6 nC Schottky Diode Characteristics IR Reverse Leakage VR = 5 V TJ = 25qC 9.9 50 PA TJ = 125qC 2.3 10 mA IR Reverse Leakage VR = 20 V TJ = 25qC 9.9 100 PA TJ = 85qC 0.3 1 mA TJ = 125qC 2.3 10 mA VF Forward Voltage IF = 500mA TJ = 25qC 0.4 0.46 V TJ = 125qC 0.3 0.35 VF Forward Voltage IF = 1A TJ = 25qC 0.5 0.55 V TJ = 125qC 0.49 0.54 2 FDFMA2P853 Rev D3 (W) FDFMA2P853 Integrated P-Channel PowerTrench Electrical Characteristics TA = 25°C unless otherwise noted Notes: 2 1. RTJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is determined by the user's board design. 2 (a) MOSFET RTJA = 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) MOSFET RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper 2 (c) Schottky RTJA = 86°C/W when mounted on a 1 in pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (d) Schottky RTJA = 140°C/W when mounted on a minimum pad of 2 oz copper a) 86oC/W b) 173oC/W c) 86oC/W d) 140oC/W when when when when mounted mounted on mounted mounted on on a 1in2 a minimum on a 1in2 a minimum pad of 2 oz pad of pad of 2 oz pad of copper 2 oz copper copper 2 oz copper Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0% ® MOSFET and Schottky Diode 3 FDFMA2P853 Rev. D3 (W) FDFMA2P853 Integrated P-Channel PowerTrench Typical Characteristics 6 3 V = -4.5V -2.5V GS VGS = -1.5V -2.0V 5 2.6 -3.5V -3.0V 4 2.2 -1.8V 3 1.8 -1.8V , NORMALIZED -2.0V 1.4 2 -2.5V DS(ON) , DRAIN CURRENT ,(A) DRAIN CURRENT R -3.0V D -1.5V -I -3.5V 1 1 -4.5V DRAIN-SOURCE ON-RESISTANCEDRAIN-SOURCE 0 0.6 00.511.522.5 0123456 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.4 0.28 ID = -3.0A VGS = -4.5V ID = -1.5A 1.3 0.22 ® 1.2 MOSFET and Schottky Diode 1.1 0.16 o TA = 125 C , NORMALIZED 1 DS(ON) , ON-RESISTANCE (OHM) R 0.1 o TA = 25 C 0.9 DS(ON) R DRAIN-SOURCE ON-RESISTANCE 0.8 0.04 -50 -25 0 25 50 75 100 125 150 0246810 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4.
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