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Si7748dp N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Si7748dp N-Channel 30 V (D-S) MOSFET with Schottky Diode Si7748DP www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY •SkyFETTM monolithic TrenchFET® power V (V) R (Ω)I (A) a Q (TYP.) DS DS(on) D g MOSFET and Schottky diode 0.0048 at VGS = 10 V 50 30 27.8 nC • 100 % R and UIS tested 0.0066 at VGS = 4.5 V 50 g • Material categorization: For definitions of compliance please see ® PowerPAK SO-8 Single www.vishay.com/doc?99912 D D 8 D APPLICATIONS 7 D D 6 5 • Notebook - Vcore low-side 6.15 mm 1 2 S Schottky Diode 3 S G 1 5.15 mm 4 S G Top View Bottom View N-Channel MOSFET Ordering Information: Si7748DP-T1-GE3 (lead (Pb)-free and halogen-free) S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 DS V Gate-Source Voltage VGS ± 20 a TC = 25 °C 50 a TC = 70 °C 50 Continuous Drain Current (TJ = 150 °C) ID b, c TA = 25 °C 23.5 T = 70 °C 18.6 b, c A A Pulsed Drain Current (t = 100 μs) IDM 150 a TC = 25 °C 50 Continuous Source-Drain Diode Current IS b, c TA = 25 °C 4.3 Single Pulse Avalanche Current I 30 L = 0.1 mH AS Single Pulse Avalanche Energy EAS 45 mJ TC = 25 °C 56 TC = 70 °C 31 Maximum Power Dissipation PD b, c W TA = 25 °C 4.8 b, c TA = 70 °C 3 Operating Junction and Storage Temperature Range T , T -55 to 150 J stg °C Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f t ≤ 10 s R 21 26 thJA °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.7 2.2 Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 68 °C/W. S14-1030-Rev. B, 12-May-14 1 Document Number: 68785 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7748DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 30 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 1.3 - 2.7 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = 30 V, VGS = 0 V - 0.075 0.300 Zero Gate Voltage Drain Current IDSS mA VDS = 30 V, VGS = 0 V, TJ = 100 °C - 6.7 65 a On-State Drain Current ID(on) VDS ≥ 5 V, VGS = 10 V 40 - - A V = 10 V, I = 15 A - 0.0039 0.0048 a GS D Drain-Source On-State Resistance RDS(on) Ω VGS = 4.5 V, ID = 10 A - 0.0053 0.0066 a Forward Transconductance gfs VDS = 15 V, ID = 15 A - 80 - S Dynamic b Input Capacitance Ciss - 3770 - Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz - 575 - pF Reverse Transfer Capacitance Crss - 215 - VDS = 15 V, VGS = 10 V, ID = 10 A - 61 92 Total Gate Charge Qg -27.842 nC Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A -10.2- Gate-Drain Charge Qgd -7.3- Gate Resistance Rg f = 1 MHz 0.2 1 2 Ω Turn-On Delay Time td(on) -1530 Rise Time tr VDD = 15 V, RL = 1.5 Ω -918 ≅ Ω Turn-Off Delay Time td(off) ID 10 A, VGEN = 10 V, Rg = 1 -3570 Fall Time tf -816 ns Turn-On Delay Time td(on) -3675 Rise Time tr VDD = 15 V, RL = 1.5 Ω -1630 ≅ Ω Turn-Off Delay Time td(off) ID 10 A, VGEN = 4.5 V, Rg = 1 -4485 Fall Time tf -1630 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - - 50 A Pulse Diode Forward Current (t = 100 μs) ISM --150 Body Diode Voltage VSD IS = 2 A - 0.42 0.55 V Body Diode Reverse Recovery Time trr -2550ns Body Diode Reverse Recovery Charge Qrr -1326nC IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Reverse Recovery Fall Time ta -12- ns Reverse Recovery Rise Time tb -13- Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1030-Rev. B, 12-May-14 2 Document Number: 68785 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7748DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 10 VGS =10thru4V 64 8 48 6 TC = 25 °C 32 4 - Drain Current (A) - Drain Current (A) D D I V =3V GS I 16 2 TC = 125 °C TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 012345 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.008 4500 Ciss 0.007 3600 ) Ω 0.006 VGS =4.5V 2700 0.005 1800 - On-Resistance ( VGS =10V C - Capacitance (pF) DS(on) Coss R 0.004 900 Crss 0.003 0 0 1428425670 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 ID =10A ID =20A VGS =10V 8 1.5 VDS =10V 6 1.2 VGS =4.5V VDS =15V 4 0.9 VDS =20V - On-Resistance (Normalized) - Gate-to-Source Voltage (V) GS 2 0.6 V DS(on) R 0 0.3 0.0 12.4 24.8 37.2 49.6 62.0 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-1030-Rev. B, 12-May-14 3 Document Number: 68785 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7748DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.025 ID =15A 0.020 10 ) Ω TJ = 150 °C TJ = 25 °C 1 0.015 0.010 0.1 - On-Resistance ( - Source Current (A) T = 125 °C S J I DS(on) 0.01 R 0.005 TJ =25 °C 0.001 0 0.0 0.2 0.4 0.6 0.8 1.0 0246810 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-1 200 10-2 160 30 V 10-3 120 20 V 10-4 Power (W) 80 - Reverse Current (A) 10 V R I 10-5 40 10-6 0 0 25 50 75 100 125 150 00.01.001 0.1 1 10 TJ - Junction Temperature (°C) Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 1000 IDM Limited 100 100 us ID Limited 10 1 ms 10 ms Limited by RDS(on)* 1 100 ms - Drain Current (A) D I 1 s 0.1 ° 10 s TC = 25 C Single Pulse DC BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS -Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-1030-Rev. B, 12-May-14 4 Document Number: 68785 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7748DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 75 60 Package Limited 45 30 - Drain Current (A) D I 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 70 2.25 56 1.80 42 1.35 Power (W) 28 Power (W) 0.90 14 0.45 0 0.00 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used.
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