Of Components, Packaging and Manufacturing Technology
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China's Progress in Semiconductor Manufacturing Equipment
MARCH 2021 China’s Progress in Semiconductor Manufacturing Equipment Accelerants and Policy Implications CSET Policy Brief AUTHORS Will Hunt Saif M. Khan Dahlia Peterson Executive Summary China has a chip problem. It depends entirely on the United States and U.S. allies for access to advanced commercial semiconductors, which underpin all modern technologies, from smartphones to fighter jets to artificial intelligence. China’s current chip dependence allows the United States and its allies to control the export of advanced chips to Chinese state and private actors whose activities threaten human rights and international security. Chip dependence is also expensive: China currently depends on imports for most of the chips it consumes. China has therefore prioritized indigenizing advanced semiconductor manufacturing equipment (SME), which chip factories require to make leading-edge chips. But indigenizing advanced SME will be hard since Chinese firms have serious weaknesses in almost all SME sub-sectors, especially photolithography, metrology, and inspection. Meanwhile, the top global SME firms—based in the United States, Japan, and the Netherlands—enjoy wide moats of intellectual property and world- class teams of engineers, making it exceptionally difficult for newcomers to the SME industry to catch up to the leading edge. But for a country with China’s resources and political will, catching up in SME is not impossible. Whether China manages to close this gap will depend on its access to five technological accelerants: 1. Equipment components. Building advanced SME often requires access to a range of complex components, which SME firms often buy from third party suppliers and then assemble into finished SME. -
The NASA Electronic Parts and Packaging (NEPP) '02 Workshop
The NASA Electronic Parts and Packaging (NEPP) ‘02 Workshop 1 JPL 400-1015, 04/02 2 The NASA Electronic Parts and Packaging (NEPP) ‘02 Workshop April 30 - May 2, 2002 Hilton Nassau Bay & Marina Houston, TX Organized by: NEPP Information, Management and Dissemination Project 3 Message ________________________ from Chuck Barnes, NEPP Program Manager Welcome to the Annual NEPP Workshop on Electronic Parts, Packaging, and Radiation Characterization for Space Applications! We’re happy you are with us and look forward to talking with you. Let’s start off with a few words about the NASA Electronic Parts and Packaging (NEPP) Program. The NEPP objectives are to: Assess the reliability of newly available electronic parts and packaging technologies for usage on NASA projects through validations, assessments and characterizations and the development of test methods/tools. Expedite infusion paths for advanced (emerging) electronic parts and packaging technologies by evaluations of readiness for manufacturability and project usage considerations. Provide NASA Projects with technology selection, application, and validation guidelines for electronic parts and packaging hardware and processes. Retain and disseminate electronic parts and packaging assurance, reliability validations, tools and availability information to the NASA community. NEPP is organized around three technology concentrations and the Information Management and Dissemination effort. The technology concentrations are Electronic Parts (EPAR), Electronic Packaging (EPAC), and Electronic Radiation Characterization (ERC). The Information Management & Dissemination (IMD) project is responsible for making all NEPP products and deliverables accessible in a controlled manner and is coordinating this conference. The Electronic Parts Project is tied to satisfying the needs of NASA programs/projects for evaluation of newly available and advanced electronic parts and maximizing effectiveness and efficiency through leveraging by teaming and partnering with industry and other agencies. -
American Semiconductor Equipment Technologies
t, f • American Semiconductor Equipment Technologies American Semiconductor Equipment Technologies 6110 Variel Avenue Woodland Hills, California 91367 Telephone: (818) 884-5050 (Thousands of Dollars) Balance Sheet (Fiscal year ending 3/31/86) Working Capital $4,375 Long-Term Debt $2,000 Net Worth $3,446 Current Liability to Net Worth 183.75% Current Liability to Inventory 131.89% Total Liability to Net Worth 241.79% Fixed Assets to Net Worth 241.79% Total Employees 150 Operating performance data are not available Source: Dun & Bradstreet SEMS Industry Econometrics © 1987 Dataquest Incorporated May American Semiconductor Equipment Technologies (Material in this section has been compiled from Dun & Bradstreet financials, Dataquest's SEMS data base, and company literature supplied by ASET. For more information on this start-up company, Dataguest clients are invited to use their inquiry privileges.) > ir THE COMPAMY Background American Semiconductor Equipment Technologies (ASET) was formed in February 1986 to pursue both ongoing and newly developing markets for lithographic systems. The Company was organized by Greg Reyes and Ralph Miller with funding of $3.9 million from four venture capital firms. ASET's product line includes i-line wafer steppers, g-line wafer steppers, substrate steppers, standalone image repeaters and pattern generators, and combination systems. 0perat,^7"g aT«d Strategy ASET Corporation currently serves the semiconductor equipment markets in the image patterning area. The Company also looks to develop business in alternate industries, including laser cards, flat panel displays, and hybrid substrates. ASET maintains research efforts directed toward expanding micro- lithographic technology. ASET acquired the assets of TRE Corporation's wafer stepper and pattern generation manufacturing unit early in 1986. -
Integrated Circuit
PREMLILA VITHALDAS POLYTECHNIC S. N. D. T. Women’s University, Juhu Campus, Santacruz (West), Mumbai- 400 049. Maharashtra (INDIA). Integrated Circuit PREPARED BY Miss. Rohini A. Mane (G. R. No.: 15070113) Miss. Anjali J. Maurya (G. R. No.: 15070114) Miss. Tejal S. Mejari (G. R. No.: 15070115) . Diploma in Electronics: Semester VII (June - November 2018) Introduction: History: The separately manufactured components like An integrated circuit is a thin slice of silicon resistor, capacitor, diode, and transistor are joined by or sometimes another material that has been specially wires or by printed circuit boards (PCB) to form processed so that a tiny electric circuit is etched on its circuit. These circuits are called discrete circuits and surface. The circuit can have many millions of they have following disadvantages. microscopic individual elements, including 1. In a large electronic circuit, there may be very transistors, resistors, capacitors, and conductors, all large number of components and as a result electrically connected in a certain way to perform the discrete assembly will occupy very large some useful function. space. 2. They are formed by soldering which causes a problem of reliability. To overcome these problems of space conservation and reliability the integrated circuit were developed(IC). Figure2 The first Integrated circuit The first integrated circuits were based on the idea that the same process used to make clusters of transistors on silicon wafers might be used to make a functional circuit, such as an amplifier circuit or a computer logic circuit. Slices of the semiconductor Figure1 Integrated Circuit materials silicon and germanium were already being printed with patterns, the exposed surfaces etched with An integrated circuit (IC), sometimes called a chemicals, and then the pattern removed, leaving chip or microchip, is a semiconductor wafer on which dozens of individual transistors, ready to be sliced up thousands or millions of tiny resistors, capacitors, and and packed individually. -
Transistors to Integrated Circuits
resistanc collectod ean r capacit foune yar o t d commercial silicon controlled rectifier, today's necessarye b relative .Th e advantage lineaf so r thyristor. This later wor alss kowa r baseou n do and circular structures are considered both for 1956 research [19]. base resistanc r collectofo d an er capacity. Parameters, which are expected to affect the In the process of diffusing the p-type substrate frequency behavior considerede ar , , including wafer into an n-p-n configuration for the first emitter depletion layer capacity, collector stage of p-n-p-n construction, particularly in the depletion layer capacit diffusiod yan n transit redistribution "drive-in" e donophasth f ro e time. Finall parametere yth s which mighe b t diffusion at higher temperature in a dry gas obtainabl comparee ear d with those needer dfo ambient (typically > 1100°C in H2), Frosch a few typical switching applications." would seriously damag r waferseou wafee Th . r surface woul e erodedb pittedd an d r eveo , n The Planar Process totally destroyed. Every time this happenee dth s e apparenlosexpressiowa th s y b tn o n The development of oxide masking by Frosch Frosch' smentiono t face t no , ourn o , s (N.H.). and Derick [9,10] on silicon deserves special We would make some adjustments, get more attention inasmuch as they anticipated planar, oxide- silicon wafers ready, and try again. protected device processing. Silicon is the key ingredien oxids MOSFEr it fo d ey an tpave wa Te dth In the early Spring of 1955, Frosch commented integrated electronics [22]. -
Electronic Packaging Technologies 1
ElectronicElectronic PackagingPackaging TechnologiesTechnologies Sergio Lopez-Buedo, Eduardo Boemo Universidad Autonoma de Madrid e-mail: [email protected] Electronic Packaging Technologies 1 Introduction to Electronic Packaging • Electronic Packaging is a multi-disciplinary subject – Mechanical, Electrical and Industrial Engineering, Chemistry, Physics and even Marketing • Electronic Packaging: Housing and interconnection of integrated circuits to form electronic systems • Electronic Packaging must provide – Circuit support and protection – Heat dissipation – Signal distribution – Manufacturability and serviceability – Power distribution Electronic Packaging Technologies 2 Issues in Electronic Packaging Electrical analysis and testing Mechanical analysis and Reliability, Chemistry, testing Physics, Mat. performance, cost, Eng.. market need/timing, manufacturability, yields…other Thermal Manufacturing analysis and and Industrial testing Eng.. Market analysis Electronic Packaging Technologies 3 Hierarchy of Interconnection Levels • Level 0 – Gate-to-gate interconnections on the silicon die • Level 1 – Connections from the chip to its package • Level 2 – PCB, from component to component or to external connector • Level 3 – Connections between PCBs, including backplanes or motherboards • Level 4 – Connections between subassemblies, for example a rack • Level 5 – Connections between physically separate systems, using for example an Ethernet LAN Electronic Packaging Technologies 4 Blue Gene: Example of Connection Hierarchy Electronic -
2005 Injection Molded & Micro Fabrication Electronic Packaging
2005 INJECTION MOLDED & MICRO FABRICATION ELECTRONIC PACKAGING Dr. Ken Gilleo ET-Trends LLC Warwick, RI Dennis Jones Matrix, Inc. Providence, RI Abstract Thermoset epoxies, discovered nearly 80 years ago, remain the workhorse plastic for electronic packaging and printed circuit boards, but this could change with increasing technical, economic and regulatory demands. Modern halogen-free thermoplastics now boast superior properties and highly automated high-efficiency high-volume processes. Injection molding can readily produce intricate 3D structures suitable for electronic component packaging and 3D molded circuits. Although there is a well-established packaging infrastructure tied to thermoset epoxies there is a much larger world-wide manufacturing base that excels in thermoplastics. Nearly 16-billion pounds of thermoplastics are molded into various parts each year in the USA alone; 30 times higher than for epoxies. We believe that the time is right for adding thermoplastic packages, interconnects and circuitry to 21st century electronics. This paper will discuss concepts, novel designs, new processes and the advancements for injection molded packaging and highlight their impressive attributes; the lowest moisture uptake, the fastest processing and the highest stability in the world of polymers. While MEMS (Micro-Electro-Mechanical Systems) packaging will be a central theme, general component packaging will also be discussed including power packages and digital camera modules. The discussion will include the development of new BGA concepts that utilize automatic insert-molding of tiny metal balls to create the 1st (to chip) and 2nd level (to circuit board) interconnect system. Assembly topics will cover package sealing methods that include laser welding. New Multi-Chip Package (MCP) ideas based on insert-molded flexible circuitry will be described that could find use in stackable designs. -
Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap
National Aeronautics and Space Administration Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap Reza Ghaffarian, Ph.D. Jet Propulsion Laboratory Pasadena, California Jet Propulsion Laboratory California Institute of Technology Pasadena, California JPL Publication 15-4 2/15 National Aeronautics and Space Administration Book of Knowledge (BOK) for NASA Electronic Packaging Roadmap NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance Reza Ghaffarian, Ph.D. Jet Propulsion Laboratory Pasadena, California NASA WBS: 724297.40.43 JPL Project Number: 104593 Task Number: 40.49.02.24 Jet Propulsion Laboratory 4800 Oak Grove Drive Pasadena, CA 91109 http://nepp.nasa.gov i This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not constitute or imply its endorsement by the United States Government or the Jet Propulsion Laboratory, California Institute of Technology. ©2015 California Institute of Technology. Government sponsorship acknowledged. Acknowledgments The author would like to acknowledge many people from industry and the Jet Propulsion Laboratory (JPL) who were critical to the progress of this activity. The author extends his appreciation to program managers of the National Aeronautics and Space Administration Electronics Parts and Packaging (NEPP) Program, including Michael Sampson, Ken LaBel, Dr. Charles Barnes, and Dr. Douglas Sheldon, for their continuous support and encouragement. ii OBJECTIVES AND PRODUCTS The objective of this document is to update the NASA roadmap on packaging technologies (initially released in 2007) and to present the current trends toward further reducing size and increasing functionality. -
Ceramic Leadless Chip Carrier (LCC)
Ceramic,Leadless,Chip,Carrier,(L Ceramic Leadless Chip Carrier (LCC) Literature Number: SNOA023 Ceramic Leadless Chip Carrier (LCC) August 1999 Ceramic Leadless Chip Carrier (LCC) 20 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E20A © 2000 National Semiconductor Corporation MS101105 www.national.com 20 Lead Ceramic Leadless Chip Carrier NS Package Number EA20B Ceramic Leadless Chip Carrier (LCC) www.national.com 2 Ceramic Leadless Chip Carrier (LCC) 24 Lead Ceramic Leadless Chip Carrier NS Package Number E24B 28 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E28A 3 www.national.com 28 Lead Ceramic Leadless Chip Carrier, Dual Cavity NS Package Number EA028C Ceramic Leadless Chip Carrier (LCC) www.national.com 4 Ceramic Leadless Chip Carrier (LCC) 32 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E32A 32 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E32B 5 www.national.com 32 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E32C Ceramic Leadless Chip Carrier (LCC) 32 Lead Ceramic Leadless Chip Carrier, Type E NS Package Number EA32B www.national.com 6 Ceramic Leadless Chip Carrier (LCC) 32 Lead Ceramic Leadless Chip Carrier, DIP NS Package Number EA32C 40 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E40A 7 www.national.com 44 Lead Ceramic Leadless Chip Carrier, Type C NS Package Number E44A Ceramic Leadless Chip Carrier (LCC) 48 Lead Ceramic Leadless Chip Carrier NS Package Number EA48B www.national.com 8 Ceramic Leadless Chip Carrier (LCC) 68 Lead Ceramic -
ELEC3221 Digital IC & Sytems Design Iain Mcnally Koushik Maharatna Basel Halak ELEC3221 / ELEC6241 Digital IC & Sytems D
ELEC3221 ELEC3221 / ELEC6241- module merge for 2016/2017 Digital IC & Sytems Design Digital IC & Sytems Design SoC Design Techniques Iain McNally Iain McNally 10 lectures 10 lectures ≈ ≈ Koushik Maharatna Koushik Maharatna 12 lectures 12 lectures ≈ ≈ Basel Halak Basel Halak 12 lectures 12 lectures ≈ ≈ 1001 1001 ELEC3221 / ELEC6241 Digital IC & Sytems Design Assessment Digital IC & Sytems Design • SoC Design Techniques 10% Coursework L-Edit Gate Design (BIM) 90% Examination Iain McNally Books • 10 lectures ≈ Integrated Circuit Design Koushik Maharatna a.k.a. Principles of CMOS VLSI Design - A Circuits and Systems Perspective Neil Weste & David Harris 12 lectures ≈ Pearson, 2011 Basel Halak Digital System Design with SystemVerilog Mark Zwolinski 12 lectures ≈ Pearson Prentice-Hall, 2010 1001 1002 Digital IC & Sytems Design History Iain McNally 1947 First Transistor Integrated Circuit Design John Bardeen, Walter Brattain, and William Shockley (Bell Labs) Content • 1952 Integrated Circuits Proposed – Introduction Geoffrey Dummer (Royal Radar Establishment) - prototype failed... – Overview of Technologies 1958 First Integrated Circuit – Layout Jack Kilby (Texas Instruments) - Co-inventor – CMOS Processing 1959 First Planar Integrated Circuit – Design Rules and Abstraction Robert Noyce (Fairchild) - Co-inventor – Cell Design and Euler Paths – System Design using Standard Cells 1961 First Commercial ICs – Wider View Simple logic functions from TI and Fairchild Notes & Resources 1965 Moore’s Law • http://users.ecs.soton.ac.uk/bim/notes/icd Gordon Moore (Fairchild) observes the trends in integration. 1003 1004 History 1947 Point Contact Transistor Collector Emitter 1947 First Transistor John Bardeen, Walter Brattain, and William Shockley (Bell Labs) Base 1952 Integrated Circuits Proposed Geoffrey Dummer (Royal Radar Establishment) - prototype failed.. -
Quad Flat No-Lead (QFN) Evauation Test
National Aeronautics and Space Administration Quad Flat No-Lead (QFN) Evaluation Testing Reza Ghaffarian, Ph.D. Jet Propulsion Laboratory Pasadena, California Jet Propulsion Laboratory California Institute of Technology Pasadena, California 6/17 National Aeronautics and Space Administration Quad Flat No-Lead (QFN) Evaluation Testing NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Success Reza Ghaffarian, Ph.D. Jet Propulsion Laboratory Pasadena, California NASA WBS: 724297.40.43 JPL Project Number: 104593 Task Number: 40.49.02.35 Jet Propulsion Laboratory 4800 Oak Grove Drive Pasadena, CA 91109 http://nepp.nasa.gov 6/17 This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not constitute or imply its endorsement by the United States Government or the Jet Propulsion Laboratory, California Institute of Technology. Copyright 2017. California Institute of Technology. Government sponsorship acknowledged. Acknowledgments The author would like to acknowledge many people from industry and the Jet Propulsion Laboratory (JPL) who were critical to the progress of this activity including the Rochester Institute of Technology (RIT). The author extends his appreciation to program managers of the National Aeronautics and Space -
Silicon Valley Group
Silicon Valley Group ANNUAL REPORT AND FORM 10-K Silicon Valley Group Enabling integrated circuit manufacturers to win the productivity race by providing leading-edge technology products that maximize yield through innovative design is the driving force of Silicon Valley Group. Our mission is fulfilled when products are delivered and installed on time and top-of-the-line service and support are provided to help customers achieve their productivity objectives. SILICON VALLEY GROUP TECHNOLOGY LEADER We are prepared for growth. a letter to our shareholders AS THE SEMICONDUCTOR GROWTH CYCLE GAINS MOMENTUM, SVG IS WELL POSITIONED FOR THE FUTURE. As the semiconductor industry goes, so too does SVG. The recent industry downturn, which started in 1998 and continued into 1999, presented major hurdles for Silicon Valley Group and its customers. It particularly impacted SVG at a time when our lithography manufacturing capacity and other capabilities had been increased to take advantage of what had been predicted to be a period of unprecedented growth. Managing a downturn is no easy feat. Although our return to profitability in the fourth quarter of the fiscal year was not as vigorous as we would have liked, I am pleased to say that SVG has risen to the challenge. We focused on the long-term health of the Company with cash preservation and investments in research and development (R&D). Our business is cyclical in nature, and I believe that the current upward momentum we are experiencing in the industry is a very positive indicator for the future. This was a very difficult year for SVG.