Electrical Characterisation of Ion Implantation Induced Defects in Silicon Based Devices for Quantum Applications
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Electrical Characterisation of Ion Implantation Induced Defects in Silicon Based Devices for Quantum Applications Aochen Duan Supervised by Professor Jeffrey C. McCallum and Doctor Brett C. Johnson School of Physics The University of Melbourne Australia 1 Abstract Quantum devices that leverage the manufacturing techniques of silicon-based classical computers make them strong candidates for future quantum computers. However, the demands on device quality are much more stringent given that quantum states can de- cohere via interactions with their environment. In this thesis, a detailed investigation of ion implantation induced defects generated during device fabrication in a regime relevant to quantum device fabrication is presented. We identify different types of defects in Si using various advanced electrical characterisation techniques. The first experimental technique, electrical conductance, was used for the investigation of the interface state density of both n- and p-type MOS capacitors after ion implantation of various species followed by a rapid thermal anneal. As precise atomic placement is critical for building Si based quantum computers, implantation through the oxide in fully fabricated devices is necessary for some applications. However, implanting through the oxide might affect the quality of the Si/SiO2 interface which is in close proximity to the region in which manipulation of the qubits take place. Implanting ions in MOS capacitors through the oxide is a model for the damage that might be observed in other fabricated devices. It will be shown that the interface state density only changes significantly after a fluence of 1013 ions/cm2 except for Bi in p-type silicon, where significant increase in interface state density was observed after a fluence of 1011 Bi/cm2. The second experimental technique, deep level transient spectroscopy, was used to study the defects in the substrate of Si after ion implantation. As Er has the potential of interfacing electrical and optical properties of Si based quantum computers, it is im- portant to know what defects will be present after the implantation because of its large atomic mass. H and Er implantation damages were compared to demonstrate the more complex defect evolution for Er implantation. Although defects were still present after a 400 ˝C anneal, the concentration was reduced by at least one order of magnitude. The last experimental technique, charge pumping, was used on MOSFETs to study the interface state density directly in device structures that can be directly used in, for example, magnetic resonance and quantum sensing applications. Charge pumping has the potential of allowing measurement and manipulation of both electronic and magnetic properties of the interface defects and defects in the MOSFET channel. For such applica- tions it may be necessary to operate the device close to absolute zero temperature. The work presented here represents a first step towards device and technique development with the ultimate aim of pushing measurements to mK temperatures where quantum device operations typically operate. 2 Declaration This is to clarify that: 1. the thesis compromises only my original work towards the PhD except where indi- cated, 2. due acknowledgement has been made in the text to all other materials used, 3. the thesis is fewer than 100,000 words in length, exclusive of tables, maps, bibli- ographies and appendices. Aochen Duan 3 Acknowledgements Firstly, I want to acknowledge the difficulty the current pandemic has caused for all of us. It has changed some of our lives forever including mine. I want to hijack the beginning of this Thesis to promote mental health awareness: please reach out to people near you if you feel isolated, whether they are friends or family. A conversation with someone you care about can go a long way especially in these uncertain times. This Thesis would not have been possible without everyone who has helped along the way. I would like to start by thanking my supervisors Jeffrey McCallum and Brett Johnson for their immense support through my PhD journey, especially towards the end when completing this PhD seemed impossible due to the lockdown measures in Melbourne. They went above and beyond to ensure I was able to cross the finish line. For that I will be forever grateful. My gratitude also goes to my PhD panelist and Chair, David Jamieson and Rob Scholten, respectively, for giving me valuable feedback and constructive criticism during the progress review meetings. Both of you have helped me stay on track and motivated throughout my PhD journey. I would like to thank Chris Lew for helping me with the various critical electrical measurements presented in this Thesis. I also want to thank Stephen Gregory for your endless patience with the wire bonding, Kaijian Xing and Steve Yanni for the helpful discussions and warm company in the laboratories, and Daniel Creedon for kindly lending me various apparatuses. I would like to express my gratitude to the people in my Lunch Time in the Office group, Wee Chaimanowong, Gary Mooney, Alex Tsai, Sam Tonetto, and James Webb, for all the intellectual and entertaining conversations. You made my PhD journey much more enjoyable. Especially Gary for your companionship during the Stage 4 lockdown. Last but not least, I want to thank my partner Janny Lee for all the food you have created as it added much flavour to my PhD journey. Contents 1 Introduction 8 1.1 Quantum Computing . .8 1.2 Criteria for Realising a Quantum Computer . .9 1.3 Quantum Computer Candidates . 10 1.3.1 Photons . 10 1.3.2 Trapped Atoms . 11 1.3.3 Nuclear Magnetic Resonance . 11 1.3.4 Quantum Dots in Solids . 12 1.3.5 Superconductors . 13 1.4 The Significance of Phosphorus in Silicon Quantum Computing . 13 1.5 Complementing Silicon-Based Quantum Computing with Erbium . 14 1.6 Building a Silicon-Based Quantum Computer from Top-Down . 15 1.7 Summary . 17 2 Background 18 2.1 Silicon . 18 2.1.1 Ion Implantation . 19 2.1.2 Simulations of Ion Implantation . 20 2.1.3 Bulk Defects . 21 2.1.4 Defects in the SiO2-Si System . 22 2.2 Characterisation Technique for Bulk Defects . 23 2.2.1 Bulk Defect Statistics . 24 2.2.2 Physics of Capacitance Transient . 28 2.2.3 Deep Level Transient Spectroscopy Technique . 31 2.3 Characterisation Techniques for Interface Defects . 33 2.3.1 Conductance Technique . 33 2.3.2 Charge Pumping . 36 4 CONTENTS 5 2.4 Conclusions . 42 3 Experimental Methods 44 3.1 Introduction . 44 3.2 Sample Cleaning . 44 3.3 Oxidation and Annealing . 45 3.4 Ion Implantation . 46 3.5 Annealing . 47 3.5.1 Metal Anneal . 47 3.5.2 Dopant Activation . 48 3.5.3 Post Ion Implantation Anneal . 48 3.6 Photolithography . 48 3.7 Defect Characterisation . 52 3.8 Examples of Capacitance and Conductance Curves for MOS . 53 3.9 Deep Level Transient Spectroscopy Measurement . 55 3.10 Charge Pumping Measurement . 57 3.11 Summary . 58 4 Ion Implantation Through the Si/SiO2 Interface 59 4.1 Introduction . 59 4.2 Background . 60 4.3 Experiment . 63 4.4 Capacitance and Conductance of Implanted Si/SiO2 .................................... 66 4.4.1 P implanted Si/SiO2 ......................... 66 4.4.2 Er implanted Si/SiO2 ......................... 69 4.4.3 Bi implanted Si/SiO2 ......................... 71 4.4.4 Discussion . 72 4.5 Conclusions . 75 4.6 Future Work . 77 5 Deep Level Transient Spectroscopy Study of Defects in H- and Er- Irradiated p-Type Si 78 5.1 Introduction . 78 5.2 Background . 80 5.3 Experiment . 81 5.4 Results . 84 CONTENTS 6 5.4.1 Device Characterisation . 84 5.4.2 Defect Analysis and Discussion . 85 5.4.3 Further Discussion . 91 5.5 Conclusions . 93 5.6 Future Work . 94 6 Charge Pumping in Si MOSFETs: A Step Toward Developing a Sensi- tive Probe of Spin-Defect Interactions 95 6.1 Introduction . 95 6.2 Background . 96 6.3 Device Fabrication . 97 6.4 MOSFET Characterisation . 100 6.4.1 Van der Pauw Measurement . 101 6.4.2 Transmission Line Measurement . 101 6.4.3 IV Characteristics . 101 6.5 Charge Pumping Measurement . 104 6.6 Discussion . 113 6.7 Conclusions . 114 6.8 Future Work . 114 7 Summary, Conclusions, and Future Work 115 7.1 Ion Implantation Through the Si/SiO2 Interface . 115 7.1.1 Summary and Conclusions . 115 7.1.2 Future Work . 116 7.2 Deep Level Transient Spectroscopy Studies on p-Type Si . 116 7.2.1 Summary and Conclusions . 116 7.2.2 Future Work . 117 7.3 Charge Pumping in Si MOSFETs . 117 7.3.1 Summary and Conclusions . 117 7.3.2 Future Work . 118 7.4 Final Remarks . 118 Appendices 119 A Photolithography . 120 B MOSFET Fabrication Process . 122 C Anneal Schemes . 128 D Complementary SRIM Simulations for Chapter 4 . 129 CONTENTS 7 E Arrhenius Plots . 131 F Complementary Figures for Chapter 6 . 133 Bibliography 133 Chapter 1 Introduction Silicon-based solid-state quantum computers are promising because they can leverage the fabrication techniques used in the manufacture of classical computers. However, the demands on device quality are much more stringent given that quantum states can decohere via interactions with their environment. This thesis addresses aspects of this challenge with an investigation of the defects generated during device fabrication using the industry standard technique of ion implantation, but in a regime relevant to quantum device fabrication. In this chapter, the concept of quantum computers and the motivation for building them will be introduced. The current state of quantum computers will be discussed including the materials that are being used to build a practical quantum computer and their corresponding advantages and disadvantages. One of the proposed ways to allow communication between qubits is optically addressing Er in Si.