DOCSLIB.ORG

———– Tips & FAQ for Diamond Heat Spreaders

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
———– Tips & FAQ for Diamond Heat Spreaders ELECTRONICS Electronics Capabilities DIAMOND HEAT SPREADERS ———– Tips & FAQ for Diamond Heat Spreaders LEVERAGING THE PROPERTIES OF DIAMOND Facing high heat flux from high power density hot spots in optoelectronics? Chemical Vapour Deposition (CVD) diamond is the key to reliability and success. The use of CVD grown diamond as high performance heat spreader is enabling for a wide range of disruptive electronics from GaN solid state RF X-band PAs to advanced ASICs to laser diodes. Naturally, understanding the fundamentals of science and engineering of the thermal properties of grown diamond is an essential part of any such building blocks. So too is the proper application needed to leverage the properties of diamond. THE MATERIAL WHAT DOES A HEAT SPREADER DO? The material is 100% sp3-bonded diamond made FOR HIGH POWER RF AND OPTOELECTRONICS, CVD DIAMOND by a microwave generated plasma CVD process. The ENABLES DEVICES TO: technology is proven to yield the highest quality diamond, – Run at higher power levels without increasing junction as defined by superior mechanical, optical and thermal operating temperature properties. Through precise process control, the growth parameters are closely set and monitored to generate – Run at the same power level, but much cooler, thereby material with the specific thermal conductivity required increasing lifetime and reliability by customers. We offer CVD diamond with thermal conductivities ranging from 1000 W/mK to 2000 W/mK. – Wide optical transmission enables CVD diamond heat Standard grades are offered as 1000 W/mK, 1300/1500 spreaders to operate within an optical path, such as in W/mK, 1800 W/mK and 2000 W/mK. Naturally different laser cavities, without optical performance degradation price points are applied to different grades. Diamond wafers (substrates) are grown in diameters from 138 FOR HIGH-VOLTAGE POWER DEVICES, CVD DIAMOND DELIVERS: mm for 1000 W/mK grade to 115 mm for 2000 W/mK. – Improved reliability and increased efficiency Material property control through direct and indirect by lowering device operating temperature thermal conductivity measurements are in place to ensure that all material produced meet the stated specifications. – Reduced system weight and footprint TRANSFORMING THERMAL MANAGEMENT – Reduction or elimination of auxiliary cooling systems Simply stated, diamond has the highest isotropic thermal conductivity of any known material at room temperature; heat is the single biggest cause of failure in TYPICAL PACKAGE GEOMETRY WITH CVD electronics. Statistically, reducing the operating junction DIAMOND MOUNTED IN MODULE temperature by 10°C can double a device lifetime. CVD diamond outperforms today’s common materials for Hot spot Chip or 'die' TIM1 - primary interface General heat thermal management, such as copper, silicon carbide and flow direction CVD Diamond TIM2 - low melting solder aluminium nitride by factors of 3 to 10 times. Heat Spreader THERMAL CONDUCTIVITY Heat DIAFILM TM200 Sink DIAFILM TM180 DIAFILM TM150 Package DIAFILM TM130 DIAFILM TM100 Cu BeO Figure 2. AIN 0 500 1000 1500 2000 Figure 1. THERMAL CONDUCTIVITY ( W / mK) Figure 1. Electronics Capabilities 2 OPTIMIZING DIAMOND HEAT SPREADERS AVAILABLE THICKNESSES AND SIZES HEAT SPREADER ATTACHMENT AND METALLIZATION For the majority of applications, the full benefit of Though non-metallized heat spreaders are available diamond heat spreader could be realized using material from Element Six, we encourage our customers to in the thickness range between 0.30 mm and 0.50 mm. It procure already metallized diamond heat spreaders. should be noted that for achieving the proper spreading, For successful integration of diamond heat spreaders, the thickness of diamond should be kept to at least it is imperative that the metallization be of the highest equal, but preferably larger than, the size of the hot spot. quality and correct thickness, as any additional layer or Though this ‘rule of thumb’ has proven to work rather material will result in additional increase in thermal well for many applications, comprehensive and detailed resistance. Typical metallization stack would consist of Ti/ thermal simulation examples are available from Element Pt/Au (100/120/1000 nm). This configuration is suitable Six. For devices requiring heat dissipation over larger for a wide range of solder processes as well as wire areas such as disk lasers, VCSEL or LED arrays thicker bonding. The titanium (adhesion layer) and platinum heat spreaders are proven to be beneficial. Most grades (barrier layer) thicknesses are usually kept fixed, but the of diamond heat spreaders are available at thicknesses gold (solder layer) thickness can be made to customer of up to 1.00 mm. The 2000 W/mK grade of material is specifications. While gold thickness on the order of commercially available at up to 3.50 mm in thickness. 1500 nm is a common choice for Au-alloy soldering, it is possible to increase the gold thickness to as high as 3500 SURFACE PREPARATION nm for applications with high electrical current densities. Surfaces need to be prepared for device mounting. This As an example, a 3000 nm gold layer has been proven to includes a smooth surface and an appropriate degree work with up to 120 A of drive current without adding of flatness to ensure good thermal contact at the TIM1 significant heat loads to the assembly. Additionally, pre- (primary thermal interface). Hence the critical surface of deposited solder materials (AuSn or AuGe) are available the heat spreader is polished to a fine finish (Ra<50 nm). at different compositions (Sn–rich or Au-rich eutectics) to Flatness of the TIM1 surface is usually between 5 and meet any alloying needs for a durable solder attachment. 10 μm over the heat spreader surface. For some critical These solder layers are typically applied in thicknesses applications, such as LDAs (Laser diode arrays) a flatness between 2500 and 4000 nm resulting in thin bond lines, value of <1 μm are achievable on the supplied parts to and hence improving overall device performance in customers. As the heat spreads out through TIM1 and combination with the advanced thermal spreading. diamond to a larger surface on the opposite side, TIM2 surface finish becomes a little less critical than TIM1. Element Six provides a fine lapped (Ra<250 nm) surface for TIM1. The fine lapped finish which meets all needs for good thermal contact to the heat sink. It also provides a visual difference for the recognition of the primary and TYPICAL APPLICATIONS secondary diamond heat spreader interface, enabling easy detection of each sides. HIGH-POWER RF DEVICES HIGH VOLTAGE POWER – Base station RF DEVICES amplifiers – Automotive sub systems VOLUME SUPPLY POINT – Satellite RF uplink – Aerospace sub systems amplifiers – Energy distribution In response to demand for high performing CVD – Microwave amplifiers – DC/DC converters diamond heat spreaders, Element Six has developed a significant fabrication and manufacturing capacity in HIGH-POWER SEMICONDUCTOR EQUIPMENT the Ascot, UK and Santa Clara, CA. OPTOELECTRONICS – Characterization – Laser diodes and laser testing EXAMPLE OF APPLICATIONS diode arrays – Die-attachment – Optical planar IC – High Power RF Devices processes modules – High Power Optoelectronics – High-brightness LEDs – High Voltage Power Devices – Semiconductor Equipment Figure 3. Electronics Capabilities 3 REDUCING THERMAL RESISTANCE A CASE STUDY (BONDED CVD DIAMOND FOR RF PACKAGING) The following case example demonstrates the significance of replacing BeO (beryllium oxide) with 1000 W/mK grade diamond. Not only is a serious source of toxicity eliminated from the package, but the overall thermal resistance between the junction and the base is reduced by 30%. Substituting 1800 W/mK grade diamond for BeO results in a further reduction in the overall thermal resistance. TEMPERATURE AS FUNCTION OF HEAT SPREADER TM100, 0.299 MM HEIGHT, 180 MIL WIDE 50 BeO HEAT CuMo flange RF device SPREADER 45 Degrees C 28.147 30.072 40 31.998 33.924 35.849 35 37.775 DIAMOND 28.147 39.701 30.072 TEMPERATURE HEAT 31.998 41.627 30 33.924 35.849 43.552 SPREADER 37.775 39.701 45.478 41.627 43.552 25 45.478 0.0 0.5 1.0 1.5 2.0 2.5 DISTANCE TO BOTTOM [mm] Figure 4. THERMAL RESISTANCE OF RF PACKAGING 100 90 FOR MORE INFORMATION 80 Element Six Technologies US Corporation* 70 3901 Burton Drive, Santa Clara, CA 95054, USA Call: +1 408 986 2400 60 Email: [email protected] Website: www.e6.com RELATIVE THERMAL RESISTANCE (%) 50 *Registered with the Department of State for handling ITAR sensitive BeO 1mm BeO 0.3mm TM100 0.3mm TM180 0.3mm and controlled defense projects. Figure 5. Electronics Capabilities © Element Six 2018. 06/18 4.
Load more

Recommended publications
  • Integrated Vapor Chamber Heat Spreader for Power Module Applications
    Proceedings of the ASME 2017 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems InterPACK2017 August 29-September 1, 2017, San Francisco, California, USA IPACK2017-74132 INTEGRATED VAPOR CHAMBER HEAT SPREADER FOR POWER MODULE APPLICATIONS Clayton L. Hose Dimeji Ibitayo Advanced Cooling Technologies, Inc. U.S. Army Research Laboratory 1046 New Holland Avenue Sensors and Electron Devices Directorate Lancaster, PA, USA 2800 Powder Mill Rd [email protected] Adelphi, MD, USA [email protected] Lauren M. Boteler Jens Weyant U.S. Army Research Laboratory Advanced Cooling Technologies, Inc. Sensors and Electron Devices Directorate 1046 New Holland Avenue 2800 Powder Mill Rd Lancaster, PA, USA Adelphi, MD, USA [email protected] [email protected] Bradley Richard Advanced Cooling Technologies, Inc. 1046 New Holland Avenue Lancaster, PA, USA [email protected] ABSTRACT spreaders. Experimental results show a 43°C reduction in This work presents a demonstration of a coefficient of device temperature compared to a standard solid CuMo heat thermal expansion (CTE) matched, high heat flux vapor spreader at a heat flux of 520 W/cm2. chamber directly integrated onto the backside of a direct bond copper (DBC) substrate to improve heat spreading and reduce INTRODUCTION thermal resistance of power electronics modules. Typical vapor There is a strong demand in the power electronics industry chambers are designed to operate at heat fluxes > 25 W/cm2 for modules with higher power densities and increased with overall thermal resistances < 0.20 °C/W. Due to the rising reliability [1-3].
    [Show full text]
  • Heat Pipes & Vapor Chambers Design Guidelines
    --- Heat Pipes & Vapor Chambers Design Guidelines Presenter George Meyer CEO, Celsia Inc. We’ll Answer these Questions • Benefits and consequences of solid materials Do I Need 2-Phase? • Some basic rules of thumb Are Vapor Chambers Just • Similarities: design, wicks & performance limits Flat Heat Pipes? • Differences: for moving or spreading heat • Heat pipes: diameter, quantity, and shape What Size Do I Need? • Vapor chambers: sizing • Attaching it to the condenser How Do I Integrate Them? • Mounting it to the heat source/ PCB What Should the Heat • Types of condensers Exchanger Look Like? • Pros and cons How Do I Model • Heat sink ballpark • CFD analysis Thermal Performance? • Excel Model • Proto testing 2 When to Use 2-Phase Devices The Short Answer • Only when the design is conduction limited or • Non-thermal goals such as weight or size can’t be achieved with other materials such as solid aluminum and/or copper. Aluminum Copper Two Phase (baselined at 1X) Base thk: 1X Base thk: 0.5X Base thk: 0.5X Weight: 1X Weight: 3X Weight: 2X Cost: 1X Cost: 1.6X Cost: 1.8X Conduction Loss in the Base: Conduction Loss in the Base: Conduction Loss in the Base: 22o Celsius 17o Celsius. If base same thickness 4o Celsius as Aluminum then 11o C If conduction loss through the base is greater than 10o C, it’s a good sign that you could be conduction limited 3 2-Phase Rules of Thumb 2-phase devices are incredible heat conductors. • 5 to 50 times better conductivity than aluminum or copper using 1 copper/water 2-phase • 1,000 to >50,000 w/mK.
    [Show full text]
  • Optimal Micro Heat Pipe Configuration on High Performance Heat Spreaders
    San Jose State University SJSU ScholarWorks Master's Theses Master's Theses and Graduate Research 2009 Optimal micro heat pipe configuration on high performance heat spreaders Seema Sandhaya Singh San Jose State University Follow this and additional works at: https://scholarworks.sjsu.edu/etd_theses Recommended Citation Singh, Seema Sandhaya, "Optimal micro heat pipe configuration on high performance heat spreaders" (2009). Master's Theses. 3683. DOI: https://doi.org/10.31979/etd.3mq6-m6aj https://scholarworks.sjsu.edu/etd_theses/3683 This Thesis is brought to you for free and open access by the Master's Theses and Graduate Research at SJSU ScholarWorks. It has been accepted for inclusion in Master's Theses by an authorized administrator of SJSU ScholarWorks. For more information, please contact [email protected]. OPTIMAL MICRO HEAT PIPE CONFIGURATION ON HIGH PERFORMANCE HEAT SPREADERS A Thesis Presented to The Faculty of the Department of Mechanical and Aerospace Engineering San Jose State University In Partial Fulfillment of the Requirements for the Degree Master of Science in Mechanical Engineering by Seema Sandhaya Singh May 2009 UMI Number: 1470973 INFORMATION TO USERS The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleed-through, substandard margins, and improper alignment can adversely affect reproduction. In the unlikely event that the author did not send a complete manuscript and there are missing pages, these will be noted. Also, if unauthorized copyright material had to be removed, a note will indicate the deletion. UMI UMI Microform 1470973 Copyright 2009 by ProQuest LLC All rights reserved.
    [Show full text]
  • Thermal Interface Materials Table of Contents
    Selection Guide Thermal Interface Materials Table of Contents Introduction . 2 Thermal Properties and Testing 4 Interface Material Selection Guide 5 GAP PAD Thermally Conductive Materials . 6 GAP PAD Comparison Data 7 Frequently Asked Questions 8 GAP PAD VO 9 GAP PAD VO Soft 10 GAP PAD VO Ultra Soft 11 GAP PAD HC 3.0 12 GAP PAD HC 5.0 13 GAP PAD 1000HD 14 GAP PAD 1000SF 15 GAP PAD HC1000 16 GAP PAD 1450 17 GAP PAD 1500 18 GAP PAD 1500R 19 GAP PAD 1500S30 20 GAP PAD A2000 21 GAP PAD 2000S40 22 GAP PAD 2200SF 23 GAP PAD A3000 24 GAP PAD 3500ULM 25 GAP PAD 5000S35 26 GAP PAD EMI 1.0 27 Gap Filler Liquid Dispensed Materials and Comparison Data . 28 Frequently Asked Questions 29 Gap Filler 1000 (Two-Part) 30 Gap Filler 1000SR (Two-Part) 31 Gap Filler 1100SF (Two-Part) 32 Gap Filler 1400SL (Two-Part) 33 Gap Filler 1500 (Two-Part) 34 Gap Filler 1500LV (Two-Part) 35 Gap Filler 2000 (Two-Part) 36 Gap Filler 3500LV (Two-Part) 37 Gap Filler 3500S35 (Two-Part) 38 Gap Filler 4000 (Two-Part) 39 Thermal Interface Compounds Comparison and FAQs. 40 TIC 1000A 41 TIC 4000 42 LIQUI-FORM 2000 43 LIQUI-FORM 3500 44 HI-FLOW Phase Change Interface Materials. 45 HI-FLOW Comparison Data 46 Frequently Asked Questions 47 HI-FLOW 105 48 HI-FLOW 225F-AC 49 HI-FLOW 225UT 50 Thermal Interface Selection Guide | HIFLOW P HIFLOW UT HIFLOW HIFLOW P Thermally Conductive Insulators Frequently Asked Questions Choosing SIL PAD Thermally Conductive Insulators SIL PAD Comparison Data Mechanical, Electrical and Thermal Properties SIL PAD Thermally Conductive Insulator Selection Table SIL PAD SIL PAD SIL PAD S SIL PAD SIL PAD ST SIL PAD SIL PAD A SIL PAD ST SIL PAD SIL PAD A SIL PAD K- SIL PAD K- SIL PAD K- QPAD II QPAD POLYPAD POLYPAD POLYPAD K- POLYPAD K- SIL PAD Tubes BONDPLY and LIQUIBOND Adhesives .....................
    [Show full text]
  • Power Electronic Fabrication Choices Vital to Performance and Yield
    Tech Brief Power Electronic Fabrication Choices Vital to Performance and Yield Accumet Tech Brief 2 Solid-State Power Electronic Fabrication Choices Vital to Performance and Yield INTRODUCTION Many solid-state power electronics, including those used in high-powered LED, RF/Microwave, electric vehicle, train and rail, electrical infrastructures, and military applications rely on physically and thermally robust ceramic ma- terials as a base. These ceramic materials are bonded to thermally and elec- trically conductive metals to help transfer thermal energy to heat spreaders/ heat sinks and away from the critical device or component active areas, while electrically insulating the power electronics from grounded shielding and enclosures. Due to the diversity of solid-state power electronic devices and components, as well as the applications, there is a wide range of substrate fabrication technologies and pre-processing that can be done. Choosing among the various options and prefab processing stages necessary to prepare a ceram- ic material, or substrate, for fabrication can be a challenge in and of itself. This technical brief includes a discussion of several of the most common power electronic substrate fabrication methods and associated prefabri- cation processing steps essential to meeting high-power electronic per- formance requirements for a wide range of applications. Further insights regarding the impact that ceramic material choices have with each substrate fabrication process are also detailed. Power Electronic Substrates Typical power electronic substrates are comprised of a ceramic base material bonded to a metal layer. This enables the creation of a mechanical and environmentally robust substrate from which power electronic devices can be placed and temperature cycled reliably, while the substrate disperses the waste heat to the assembly body or a heat sink.
    [Show full text]
  • Miniaturization, Packaging, and Thermal Analysis of Power Electronics Modules
    Miniaturization, Packaging, and Thermal Analysis of Power Electronics Modules by Alexander B. Lostetter Thesis submitted to the Faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements for the degree of Master of Science In Electrical Engineering Approved: __________________________ A. Elshabini, Chairman __________________________ __________________________ I. Besieris S. Raman May, 1998 Blacksburg, Virginia Miniaturization, Packaging, and Thermal Analysis of Power Electronics Modules by Alexander B. Lostetter Committee Chairman: A. Elshabini The Bradley Department of Electrical & Computer Engineering EXECUTIVE SUMMARY High power circuits, those involving high levels of voltages and currents to produce several kilowatts of power, would possess an optimized efficiency when driven at high frequencies (on the order of MHz). Such an approach would greatly reduce the size of capacitive and magnetic components, and thus ultimately reduce the cost of the power electronic circuits. The problem with this strategy in conventional packaging, however, is that at high frequencies, interconnects between the power devices on one board (such as Power MOSFETs or IGBTs) and components on another board (such as the coasting diodes) suffer from severe parasitic effects, thus affecting the overall electrical performance of the system. A conceivable solution to this problem is the design and construction of a power electronics module which would incorporate all power devices and supporting circuitry into one very simple and compact module. Such an approach would reduce interconnect inductances (thus reducing costly parasitic effects), increase system efficiency and electrical performance, produce a standardization for power electronic modules, and through this standardization, lower overall industry-wide system costs and increase power electronic system reliability.
    [Show full text]
  • Power Electronics High Performance Air-Cooled Heat Sinks Integratinggraphite Based Materials
    Purdue University Purdue e-Pubs International Refrigeration and Air Conditioning Conference School of Mechanical Engineering 2021 Power Electronics High Performance Air-Cooled Heat Sinks IntegratingGraphite Based Materials Carles Oliet Universitat Politècnica de Catalunya (UPC), Spain, [email protected] Pablo Castrillo Universitat Politècnica de Catalunya (UPC), Spain Eugenio Schillaci Universitat Politècnica de Catalunya (UPC), Spain Daniel Santos Universitat Politècnica de Catalunya (UPC), Spain Joaquim Rigola Universitat Politècnica de Catalunya (UPC), Spain See next page for additional authors Follow this and additional works at: https://docs.lib.purdue.edu/iracc Oliet, Carles; Castrillo, Pablo; Schillaci, Eugenio; Santos, Daniel; Rigola, Joaquim; Mullen, David; Cochrane, Nathan; McKay, Connor; Halimic, Elvedin; Hoell, Klaus; Preishuber-Pfuegl, Florian; Freismuth, Juergen; Bouton, Mathieu; and Pontrucher, Marc, "Power Electronics High Performance Air-Cooled Heat Sinks IntegratingGraphite Based Materials" (2021). International Refrigeration and Air Conditioning Conference. Paper 2207. https://docs.lib.purdue.edu/iracc/2207 This document has been made available through Purdue e-Pubs, a service of the Purdue University Libraries. Please contact [email protected] for additional information. Complete proceedings may be acquired in print and on CD-ROM directly from the Ray W. Herrick Laboratories at https://engineering.purdue.edu/Herrick/Events/orderlit.html Authors Carles Oliet, Pablo Castrillo, Eugenio Schillaci, Daniel Santos, Joaquim
    [Show full text]
  • Heat Pipe Embedded Alsic Plates for High Conductivity – Low Cte Heat Spreaders
    HEAT PIPE EMBEDDED ALSIC PLATES FOR HIGH CONDUCTIVITY – LOW CTE HEAT SPREADERS J. Weyant1, S. Garner1, M. Johnson2, M. Occhionero3 1Advanced Cooling Technologies, Inc 1046 New Holland Ave, Lancaster, Pa 17601 Phone: (717) 295-6093 Fax: (717) 295-6064 Email: [email protected] 2National Nuclear Security Administration's Kansas City Plant 3CPS Technologies Corporation Operated by Honeywell Federal Manufacturing & 111 South Worcester Street, Norton, MA 02766 Technologies, LLC Phone: (508) 222-0614 x242 Phone: (816) 997-4172 Fax: 508 222-0220 Email: [email protected] Email: [email protected] ABSTRACT affordable. Packaging materials with device and substrate compatible CTE values minimize the thermally induced Heat pipe embedded aluminum silicon carbide (AlSiC) plates stresses during power cycling [2]. Thermal stresses often are innovative heat spreaders that provide high thermal result in the delamination of substrates that disrupts the conductivity and low coefficient of thermal expansion (CTE). thermal dissipation path causing electronics thermal failure. Since heat pipes are two phase devices, they demonstrate CTE compatibility allows substrates/solder layers to be effective thermal conductivities ranging between 10,000 and optimized by reducing thickness to take full advantage of 200,000 W/m-K, depending on the heat pipe length. Installing packaging material thermal conductivity and the integrated heat pipes into an AlSiC plate dramatically increases the cooling systems. plate’s effective thermal conductivity. AlSiC plates alone have a thermal conductivity of roughly 200 W/m-K and a CTE Lightweight, high strength, high stiffness packaging materials ranging from 7-12 ppm/°C. Silicon alone has a thermal minimize failures due to shock and vibration in service as well expansion coefficient of 3 ppm/°C, which makes AlSiC a as shock that occurs during high speed automated assembly.
    [Show full text]
  • Hybrid Heat Sink Manufacturing by Cold Spray Process
    PRESS RELEASE Impact Innovations GmbH Bürgermeister-Steinberger-Ring 1 84431 Rattenkirchen Germany Hybrid Heat Sink Manufacturing by Telefon: +49 8636 695190-0 Fax: +49 8636 695190-10 Cold Spray Process Email: [email protected] Web: www.impact-innovations.com by Dr. Reeti Singh Rattenkirchen, 22nd February 2021 Electronic devices, e. g. in telecommunications and high power systems, generate heat during normal operation that must be dissipated to avoid junction temperatures exceeding tolerable limits as this can lead to performance inhibition and deterioration of reliability. It has been shown that every 10 K reduction in the junction temperature will increase the device‘s life and performance. Thus, maintaining the junction temperature below the maximum allowable limit is a primary issue. The most common way to cool devices has been air/liquid cooling using a heat sink. Conventionally, copper and aluminum heat sinks are used in the combination with such cooling systems. Copper is always a preferred choice for heat sinks due to its cooling capacity superior to aluminum; however, copper‘s weight and cost limit the size, especially for large electronics systems. Whereas due to lower thermal conductivity, aluminum heat sinks do not spread the heat quickly enough; thus, a large surface area or taller fins are required, which is not a plausible option in many cases. Moreover, a problem arises if a heat sink is substantially larger than the integrated circuit devices it resides on. If the electronic device generates heat faster than the heat sink spreads, portions of the heat sink far away from the device do not contribute much to heat dissipation.
    [Show full text]
  • Diamond-Based Multimaterials for Thermal Management Applications
    DIAMOND-BASED MULTIMATERIALS FOR THERMAL MANAGEMENT APPLICATIONS By Clio Azina A DISSERTATION Presented to the Faculty of The Graduate College at the University of Nebraska, United States and The Graduate College at the University of Bordeaux, France In Partial Fulfillment of Requirements For the Degree of Doctor of Philosophy Major: Engineering (Electrical Engineering) Major: Chemistry (Physical-Chemistry of Condensed Matter) Under the Supervision of: Professor Yongfeng Lu, University of Nebraska-Lincoln Professor Jean-François Silvain, University of Bordeaux Lincoln, Nebraska November, 2017 THÈSE EN COTUTELLE PRÉSENTÉE POUR OBTENIR LE GRADE DE DOCTEUR DE L’UNIVERSITÉ DE BORDEAUX ET DE L’UNIVERSITÉ DU NEBRASKA ÉCOLE DOCTORALE DES SCIENCES CHIMIQUES (Université de Bordeaux) SPÉCIALITÉ : Physico-Chimie de la Matière Condensée ÉCOLE DOCTORALE DE GENIE ELECTRIQUE (Université du Nebraska) SPÉCIALITÉ : Génie Electrique Par Clio AZINA Optimisation de multi-matériaux à base de diamant pour la gestion thermique Sous la direction de M. Jean-François SILVAIN et M. Yongfeng LU Soutenue le 21 Novembre 2017 Rapporteurs : Mme Anne JOULAIN Professeur, PDP Institut P’, Université de Poitiers M. Hansang KWON Maître de conférences, Pukyong National University Examinateurs : M. Jerry HUDGINS Professeur, ECE, UNL M. Sidy NDAO Maître de conférences, MME, UNL M. Pierre-Marie GEFFROY Chargé de Recherche CNRS, SPCTS, Université de Limoges M. Guillaume LACOMBE Ingénieur Recherche et Développement, Composite Innovation Invités M. Natale IANNO Professeur, ECE, UNL M. Jean-Marc HEINTZ Professeur INP Bordeaux, ICMCB, ENSCBP DIAMOND-BASED MULTIMATERIALS FOR THERMAL MANAGEMENT APPLICATIONS Clio Azina, Ph.D. University of Nebraska; University of Bordeaux, 2017 Advisors: Yongfeng Lu, Jean-François Silvain Today, the microelectronics industry uses higher functioning frequencies in commercialized components.
    [Show full text]
  • BGA Socket with Heatsink for High Power Devices
    BGA Socket with Heatsink for High Power Devices Introduction The classic function of a socket is to provide a connection mechanism from the IC (Integrated Circuit) to the circuit board with as little electrical load as possible. This allows the IC to function as it is soldered into the PCB (printed circuit board) but can be replaced by another IC to upgrade or test multiple IC’s. With the advent of “light bulb power” type IC’s getting into the tens of watts perhaps even 40 to 50 watts, the socket needs to accommodate removal of the heat due to this power or the IC will self destruct or worse. Socket Overview Two of the most common high frequency contactors for a socket are elastomer and pogo pin with bandwidths of 6-20 GHz and 2-10 GHz respectively depending on the connection components selected. A functional drawing of a socket using these connection mechanisms is shown in Figure 1. The socket consists of the connection mechanism that interconnects BGA balls to the target PCB pads, socket body for precisely placing the IC over the connection mechanism, and a compression mechanism to apply the down force to compress the BGA’s into the connection mechanism. In a high power application the compression mechanism needs to perform double duty acting as a heatsink pulling the heat out of the IC. A backing plate may be needed to provide the rigidity for the connection mechanism to work reliably. This is dependent on the size of the chip, flatness required, PCB material and PCB thickness.
    [Show full text]
  • Refractory Metals for Thermal Management |2|
    High Performance Metal Solutions Refractory Metals for Thermal Management |2| Introducing H.C. Starck H.C. Starck is an international Introducing H.C. Starck 2 company with 3,000 employees Materials – Development – Solutions 3 around the world. Our 12 ISO- certified production locations, Materials: research and laboratory facilities, High Tech Materials for High Tech Solutions 4 – 5 and sales and business offices are located in Europe, North America, Development: and Asia. We apply our engineering, The Innovative Power of H.C. Starck 6 technology, and industry expertise to develop custom solutions for our Solutions: customers. We produce a unique Value-Added Product Solutions for Thermal Management Products 7 assortment of refractory metals, Pure Products 7 including molybdenum, tungsten, Laminate Products 8 tantalum, niobium, rhenium, and Composite Products 9 their alloys, as well as advanced Plating 10 ceramics. Comparison of Product Properties 10 – 11 |3| Materials … … stands for H.C. Starck providing a unique range of high performance materials that are 1 unsurpassed in quality and supply reliability. Development … … stands for our intensive R&D and application-oriented expertise, which makes us a driving force behind new products, 2 technologies, applications and markets. Solutions … … stands for the ability to support our customers along the entire value chain – from powder to finished 3 components – with innovative and customized solutions. Materials – Development – Solutions: Driving Your Value Creation Our high tech materials and technologies, creatively combined with the innovative power of H.C. Starck, produce value-added solutions for thermal management applications. |4| | Materials | High Tech Materials for High Tech Applications H.C. Starck has decades of experience in the production of high performance materials that provide solutions to demanding applications in the electronics industry.
    [Show full text]