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Power Electronic Fabrication Choices Vital to Performance and Yield Tech Brief Power Electronic Fabrication Choices Vital to Performance and Yield Accumet Tech Brief 2 Solid-State Power Electronic Fabrication Choices Vital to Performance and Yield INTRODUCTION Many solid-state power electronics, including those used in high-powered LED, RF/Microwave, electric vehicle, train and rail, electrical infrastructures, and military applications rely on physically and thermally robust ceramic ma- terials as a base. These ceramic materials are bonded to thermally and elec- trically conductive metals to help transfer thermal energy to heat spreaders/ heat sinks and away from the critical device or component active areas, while electrically insulating the power electronics from grounded shielding and enclosures. Due to the diversity of solid-state power electronic devices and components, as well as the applications, there is a wide range of substrate fabrication technologies and pre-processing that can be done. Choosing among the various options and prefab processing stages necessary to prepare a ceram- ic material, or substrate, for fabrication can be a challenge in and of itself. This technical brief includes a discussion of several of the most common power electronic substrate fabrication methods and associated prefabri- cation processing steps essential to meeting high-power electronic per- formance requirements for a wide range of applications. Further insights regarding the impact that ceramic material choices have with each substrate fabrication process are also detailed. Power Electronic Substrates Typical power electronic substrates are comprised of a ceramic base material bonded to a metal layer. This enables the creation of a mechanical and environmentally robust substrate from which power electronic devices can be placed and temperature cycled reliably, while the substrate disperses the waste heat to the assembly body or a heat sink. Furthermore, the adhesion between the ceramic material and metal layer help to prevent the metal— which typically has a much higher coefficient of thermal expansion than the semiconductor and ceramic—from expanding at higher temperatures and damaging the semiconductors used in the power electronic components and devices. In this respect, ceramic material-based substrates can outper- form organic-insulator substrates, as a ceramic material better maintains Electric Car Lithium Battery Pack its dimensional stability over time while the organic-insulative substrates The high voltage and current carried by elec- deteriorate over time. tric vehicle chargers, inverters, and switches rely on high power solid state electronics Having a thicker insulating substrate (thicker ceramic base material) nega- built on robust ceramic substrates. tively impacts the thermal conductivity of a substrate, but also simultaneous- ly increases the electrical insulation of the substrate, which must be consid- www.accumet.com Accumet Tech Brief 3 Solid-State Power Electronic Fabrication Choices Vital to Performance and Yield ered prior to selecting a ceramic material and substrate thickness. Moreover, having a closer CTE to the semiconductor of the power device is desirable for larger die sizes, as less mechanical strain will be induced on the chip during temperature cycling. There are several common methods and combinations of ceramic material and metal to develop a power electronic substrate. These include Direct Bonded Copper (DBC), Active Metal Brazing (AMB), and Thick Print Copper (TPC). This section will describe the features of these substrate fabrication methods and how they pair with the various ceramic substrates. Direct Bonded Copper (DBC) DBC is a very common process in which a copper oxide (eutectic bond) is formed between a copper sheet to the oxides in the ceramic substrate in a nitrogen and oxygen atmosphere and at very high temperatures—near 1070 degrees Celsius. With DBC no interlayer material is necessary, but the temperature must be kept below 1085 degrees Celsius, as copper melts at this temperature. DBC is often a two-layer process, where the back of the substrate is a solid and unfeatured sheet of copper, and where the top cop- per layer is structured using chemical etching, or is performed to develop the electrical circuit traces. The bottom copper layer is most often soldered to a heat spreader or heatsink. Due to the relatively low cost of the process, alumina is often used with the DBC process to develop low-cost substrates. However, the sensitivity of the Comparison of Direct Bonded Copper eutectic bonding with DBC makes developing a high-yield mass production and Thick Film Copper High Power process of large DBC cards challenging. Substrate Fabrication Processes AlN and BeO are also used to make DBC substrates. Though more ex- pensive, AlN and BeO bases offer much greater thermal conductivity than alumina, with AlN being seven to eight times more thermally conductive and BeO being twice again as thermally conductive as AlN. AlN also offers a much closer CTE to Si and SiC semiconductor chips than alumina, but is also mechanically weaker than either alumina or BeO. Hence, for the same me- chanical strength, a much thicker slab of AlN is needed. AlN DBC substrates also require an additional precision lapping and controlled oxidation stage to achieve proper eutectic bonding. The thick copper-foil and high-performance ceramic materials enable DBC substrates to be very mechanically robust and reliable with good thermal conductivity. The thick copper of a DBC substrate also exhibits excellent electrical conductivity, while the thick ceramic provides substantial electrical insulation between the top circuit layer and grounded bottom layer. Solder and thick-wire stages are also readily performed on DBC substrates. DBC process technology steps www.accumet.com Accumet Tech Brief 4 Solid-State Power Electronic Fabrication Choices Vital to Performance and Yield Active Metal Brazing (AMB) With AMB a metal foil, typically copper, is bonded to a ceramic using a vacuum brazing process. Silver and copper, with additional titanium or indi- um brazing materials are most often used during AMB. AMB temperatures range from 800 to 1000 degrees Celsius, which is generally 50 to 100 de- grees Celsius above the braze alloys melting temperature. AMB substrates are made in a vacuum or inert atmosphere to prevent chemical action of the highly reactive braze alloys. AMB substrates are most often composed of alumina or AlN. Alumina AMB substrates can benefit from a thicker copper-foil layer than AlN AMB substrates, as the greater mechanical strength of alumina helps prevent damage to the semiconductor from the metal-to-semiconductor CTE mis- match. Thicker copper in an AMB substrate enables greater current-carrying capacity and improved heat spreading compared to thinner copper AMB substrates, which could translate to better thermal control of a power device or a subsequently smaller power device die size. Another process that uses brazing is Direct Bonded Aluminum (DBA), which actually uses an aluminum-silicon (AlSi) composite to bond thick aluminum foil to a ceramic. Though aluminum exhibits less thermal and electrical conductivity than copper, the softer aluminum foil also imparts less physical strain on the semiconductor chip during temperature cycling. Hence, DBA substrates can typically undergo many more thermal cycles than DBC or AMB with copper foil. Active Metal Brazing Process Steps www.accumet.com Accumet Tech Brief 5 Solid-State Power Electronic Fabrication Choices Vital to Performance and Yield Thick Print Copper (TPC) A TPC substrate is fabricated by applying a copper-powder paste via screen printing to a ceramic substrate and then firing the piece between 850 and 950 degrees Celsius to sinter the copper powder to the ceramic. TPC cre- ates a high-adhesion bond between the metal and ceramic, which enables extreme reliability during temperature cycling. Moreover, with TPC, thick and wide copper traces, as well as thin and narrow copper traces, can be devel- oped on the same substrate, allowing for logic, analog, RF, and high-power circuits to be developed simultaneously. Very thick silver and copper conductors, between 25 and 300 micrometers, can be developed on a wide range of ceramic substrates. Unlike other substrate fabrication processes, TPC substrates can be built with through- hole interconnects, which can be used to develop multi-sided circuits or high thermal conductivity vias for enhanced thermal dissipation. TPC substrates have been used for the past several decades in military, automotive, aero- space, and other high-power applications that require extreme reliability. The ceramic and metal bond can also be tailored with the TPC process to control the bond depth in the ceramic. Furthermore, the metal paste can be enhanced with adhesion promoting materials, such as glass and oxide ma- terials, to tailor the CTE of the TPC substrate to better match the semicon- ductor of the power-device die. TPC substrates can also be fabricated with standard assembly processes, such as soldering and thick-wire bonding. Newer technologies, similar to TPC, are silver sintering and silver soldering. These methods use silver (Ag) metal powder or tin-silver (SnAg) to develop very thermal- and electric-conductive traces on a ceramic base material. Both the silver soldering and sintering processes require extremely precise temperature and timing control. The ceramic base material’s surface finish must also be well-matched to the process to enable proper adhesion. Properties DBC Thick
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