Introduction to Transistors
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The Invention of the Transistor
The invention of the transistor Michael Riordan Department of Physics, University of California, Santa Cruz, California 95064 Lillian Hoddeson Department of History, University of Illinois, Urbana, Illinois 61801 Conyers Herring Department of Applied Physics, Stanford University, Stanford, California 94305 [S0034-6861(99)00302-5] Arguably the most important invention of the past standing of solid-state physics. We conclude with an century, the transistor is often cited as the exemplar of analysis of the impact of this breakthrough upon the how scientific research can lead to useful commercial discipline itself. products. Emerging in 1947 from a Bell Telephone Laboratories program of basic research on the physics I. PRELIMINARY INVESTIGATIONS of solids, it began to replace vacuum tubes in the 1950s and eventually spawned the integrated circuit and The quantum theory of solids was fairly well estab- microprocessor—the heart of a semiconductor industry lished by the mid-1930s, when semiconductors began to now generating annual sales of more than $150 billion. be of interest to industrial scientists seeking solid-state These solid-state electronic devices are what have put alternatives to vacuum-tube amplifiers and electrome- computers in our laps and on desktops and permitted chanical relays. Based on the work of Felix Bloch, Ru- them to communicate with each other over telephone dolf Peierls, and Alan Wilson, there was an established networks around the globe. The transistor has aptly understanding of the band structure of electron energies been called the ‘‘nerve cell’’ of the Information Age. in ideal crystals (Hoddeson, Baym, and Eckert, 1987; Actually the history of this invention is far more in- Hoddeson et al., 1992). -
A HISTORY of the SOLAR CELL, in PATENTS Karthik Kumar, Ph.D
A HISTORY OF THE SOLAR CELL, IN PATENTS Karthik Kumar, Ph.D., Finnegan, Henderson, Farabow, Garrett & Dunner, LLP 901 New York Avenue, N.W., Washington, D.C. 20001 [email protected] Member, Artificial Intelligence & Other Emerging Technologies Committee Intellectual Property Owners Association 1501 M St. N.W., Suite 1150, Washington, D.C. 20005 [email protected] Introduction Solar cell technology has seen exponential growth over the last two decades. It has evolved from serving small-scale niche applications to being considered a mainstream energy source. For example, worldwide solar photovoltaic capacity had grown to 512 Gigawatts by the end of 2018 (representing 27% growth from 2017)1. In 1956, solar panels cost roughly $300 per watt. By 1975, that figure had dropped to just over $100 a watt. Today, a solar panel can cost as little as $0.50 a watt. Several countries are edging towards double-digit contribution to their electricity needs from solar technology, a trend that by most accounts is forecast to continue into the foreseeable future. This exponential adoption has been made possible by 180 years of continuing technological innovation in this industry. Aided by patent protection, this centuries-long technological innovation has steadily improved solar energy conversion efficiency while lowering volume production costs. That history is also littered with the names of some of the foremost scientists and engineers to walk this earth. In this article, we review that history, as captured in the patents filed contemporaneously with the technological innovation. 1 Wiki-Solar, Utility-scale solar in 2018: Still growing thanks to Australia and other later entrants, https://wiki-solar.org/library/public/190314_Utility-scale_solar_in_2018.pdf (Mar. -
Chapter1: Semiconductor Diode
Chapter1: Semiconductor Diode. Electronics I Discussion Eng.Abdo Salah Theoretical Background: • The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively c harged ions in P side of junction(an atom in P -side accept electron and be comes negatively c harged ion) and po sitive ly c harged ion on n side (an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not app lied acros s the diode , de pletion region for ms as shown in the above figure. When the voltage is applied be tween the two terminals of the diode (anode and cathode) two possibilities arises depending o n polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P -type material to recombine with the ions near boundary and to flow crossing junction. -
High Energy Yield Bifacial-IBC Solar Cells Enabled by Poly-Siox Carrier Selective Passivating Contacts
High energy yield Bifacial-IBC solar cells enabled by poly-SiOx carrier selective passivating contacts Zakaria Asalieh TU Delft i High energy yield Bifacial-IBC solar cells enabled by poly-SiOX carrier selective passivating contacts By Zakaria Asalieh in partial fulfilment of the requirements for the degree of Master of Science at the Delft University of Technology, to be defended publicly on Thursday April 1, 2021 at 15:00 Supervisor: Asso. Prof. dr. Olindo Isabella Dr. Guangtao Yang Thesis committee: Assoc. Prof. dr. Olindo Isabella, TU Delft (ESE-PVMD) Prof. dr. Miro Zeman, TU Delft (ESE-PVMD) Dr. Massimo Mastrangeli, TU Delft (ECTM) Dr. Guangtao Yang, TU Delft (ESE,PVMD) ii iii Conference Abstract Evaluation and demonstration of bifacial-IBC solar cells featuring poly-Si alloy passivating contacts- Guangtao Yang, Zakaria Asalieh, Paul Procel, YiFeng Zhao, Can Han, Luana Mazzarella, Miro Zeman, Olindo Isabella – EUPVSEC 2021 iv v Acknowledgement First, I would like to express my gratitude to Dr Olindo Isabella for giving me the opportunity to work with his group. He is one of the main reasons why I chose to do my master thesis in the PVMD group. After finishing my internship on solar cells, he recommended me to join the thesis projects event where I decided to work on this interesting thesis topic. I cannot forget his support when my family and I had the Covid-19 virus. Second, I'd like to thank my daily supervisor Dr Guangtao Yang, despite supervising multiple MSc students, was able to provide me with all of the necessary guidance during this work. -
An Integrated Semiconductor Device Enabling Non-Optical Genome Sequencing
ARTICLE doi:10.1038/nature10242 An integrated semiconductor device enabling non-optical genome sequencing Jonathan M. Rothberg1, Wolfgang Hinz1, Todd M. Rearick1, Jonathan Schultz1, William Mileski1, Mel Davey1, John H. Leamon1, Kim Johnson1, Mark J. Milgrew1, Matthew Edwards1, Jeremy Hoon1, Jan F. Simons1, David Marran1, Jason W. Myers1, John F. Davidson1, Annika Branting1, John R. Nobile1, Bernard P. Puc1, David Light1, Travis A. Clark1, Martin Huber1, Jeffrey T. Branciforte1, Isaac B. Stoner1, Simon E. Cawley1, Michael Lyons1, Yutao Fu1, Nils Homer1, Marina Sedova1, Xin Miao1, Brian Reed1, Jeffrey Sabina1, Erika Feierstein1, Michelle Schorn1, Mohammad Alanjary1, Eileen Dimalanta1, Devin Dressman1, Rachel Kasinskas1, Tanya Sokolsky1, Jacqueline A. Fidanza1, Eugeni Namsaraev1, Kevin J. McKernan1, Alan Williams1, G. Thomas Roth1 & James Bustillo1 The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. -
Microphonics & Lorentz Detuning: Determined by Cavity/Cryomodule Design and Background Environment
Old Dominion University October 2012 2 2 2 f opt (b 1) fo IRQQ(/) where b oocos V Phase Amplitude Controller Controller Klystron 1.0 Limiter 0.9 0.8 Loop 0.7 Phase Amplitude 0.6 CEBAF 6 GeV Set Point 0.5 Amplitude CEBAF Upgrade Detector 0.4 Cavity 0.3 0.2 Energy Content (Normalized)Content Energy 0.1 Reference Phase 0.0 Phase -1,000 -800 -600 -400 -200 0 200 Set Point Detector Detuning (Hz) • RF Systems • What are you controlling? • Cavity Equations • Control Systems Cavity Models • Algorithms Generator Driven Resonator (GDR) Self Excited Loop (SEL) • Hardware Receiver ADC/Jitter Transmitter Digital Signal Processing • Cavity Tuning & Resonance Control Stepper Motor Piezo • RF Systems are broken RF Control Power down into two parts. Electronics Amplifier • The high power section consisting of the power amplifier and the high power transmission line Waveguide/ (waveguide or coax) Coax • The Low power (level) section (LLRF) consisting of the field and resonance control components Cavity • Think your grandfathers “Hi-Fi” stereo or your guitar amp. • Intensity modulation of DC beam by control grid • Efficiency ~ 50-70% (dependent on operation Triode Tetrode mode) • Gain 10-20 dB • Frequency dc – 500 MHz • Power to 1 MW • Velocity modulation with input Cavity • Drift space and several cavities to achieve bunching • It is highly efficient DC to RF Conversion (50%+) • High gain >50 dB • CW klystrons typically have a modulating anode for - Gain control - RF drive power in saturation • Power: CW 1 MW, Pulsed 5 MW • Frequencies 300 MHz to 10 GHz+ A. Nassiri CW SCRF workshop 2012 • Intensity modulation of DC beam by control grid • It is highly efficient DC to RF Conversion approaching 70% • Unfortunately low gain 22 dB (max) • Power: CW to 80 kW • Frequencies 300 MHz to 1.5 GHz As a tetrode As a klystron A. -
Vlsi Design Lecture Notes B.Tech (Iv Year – I Sem) (2018-19)
VLSI DESIGN LECTURE NOTES B.TECH (IV YEAR – I SEM) (2018-19) Prepared by Dr. V.M. Senthilkumar, Professor/ECE & Ms.M.Anusha, AP/ECE Department of Electronics and Communication Engineering MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY (Autonomous Institution – UGC, Govt. of India) Recognized under 2(f) and 12 (B) of UGC ACT 1956 (Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade - ISO 9001:2015 Certified) Maisammaguda, Dhulapally (Post Via. Kompally), Secunderabad – 500100, Telangana State, India Unit -1 IC Technologies, MOS & Bi CMOS Circuits Unit -1 IC Technologies, MOS & Bi CMOS Circuits UNIT-I IC Technologies Introduction Basic Electrical Properties of MOS and BiCMOS Circuits MOS I - V relationships DS DS PMOS MOS transistor Threshold Voltage - VT figure of NMOS merit-ω0 Transconductance-g , g ; CMOS m ds Pass transistor & NMOS Inverter, Various BiCMOS pull ups, CMOS Inverter Technologies analysis and design Bi-CMOS Inverters Unit -1 IC Technologies, MOS & Bi CMOS Circuits INTRODUCTION TO IC TECHNOLOGY The development of electronics endless with invention of vaccum tubes and associated electronic circuits. This activity termed as vaccum tube electronics, afterward the evolution of solid state devices and consequent development of integrated circuits are responsible for the present status of communication, computing and instrumentation. • The first vaccum tube diode was invented by john ambrase Fleming in 1904. • The vaccum triode was invented by lee de forest in 1906. Early developments of the Integrated Circuit (IC) go back to 1949. German engineer Werner Jacobi filed a patent for an IC like semiconductor amplifying device showing five transistors on a common substrate in a 2-stage amplifier arrangement. -
Economic Research Working Paper No. 27
Economic Research Working Paper No. 27 Breakthrough technologies – Semiconductor, innovation and intellectual property Thomas Hoeren Francesca Guadagno Sacha Wunsch-Vincent Economics & Statistics Series November 2015 Breakthrough Technologies – Semiconductors, Innovation and Intellectual Property Thomas Hoeren*, Francesca Guadagno**, Sacha Wunsch-Vincent** Abstract Semiconductor technology is at the origin of today’s digital economy. Its contribution to innova- tion, productivity and economic growth in the past four decades has been extensive. This paper analyzes how this breakthrough technology came about, how it diffused, and what role intellec- tual property (IP) played historically. The paper finds that the semiconductor innovation ecosys- tem evolved considerably over time, reflecting in particular the move from early-stage invention and first commercialization to mass production and diffusion. All phases relied heavily on con- tributions in fundamental science, linkages to public research and individual entrepreneurship. Government policy, in the form of demand-side and industrial policies were key. In terms of IP, patents were used intensively. However, they were often used as an effective means of sharing technology, rather than merely as a tool to block competitors. Antitrust policy helped spur key patent holders to set up liberal licensing policies. In contrast, and potentially as a cautionary tale for the future, the creation of new IP forms – the sui generis system to protect mask design - did not produce the desired outcome. Finally, copyright has gained in importance more re- cently. Keywords: semiconductors, innovation, patent, sui generis, copyright, intellectual property JEL Classification: O330, O340, O470, O380 Disclaimer: The views expressed in this article are those of the authors and do not necessarily reflect the views of the World Intellectual Property Organization or its member states. -
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500. -
Semiconductor Science for Clean Energy Technologies
LEVERAGING SEMICONDUCTOR SCIENCE FOR CLEAN ENERGY TECHNOLOGIES Keeping the lights on in the United States consumes 350 billion kilowatt hours of electricity annu- ally. Most of that light still comes from incandescent bulbs, which haven’t changed much since Thomas Edison invented them 140 years ago. But now a dramatically more efficient lighting tech- nology is seeing rapid adoption: semiconductor devices known as light-emitting diodes (LEDs) use 85 percent less energy than incandescent bulbs, last 25 times as long, and have the potential to save U.S. consumers a huge portion of the electricity now used for lighting. High-performance solar power plant in Alamosa, Colorado. It generates electricity with multi-layer solar cells, developed by the National Renewable Energy Laboratory, that absorb and utilize more of the sun’s energy. (Dennis Schroeder / National Renewable Energy Laboratory) How we generate electricity is also changing. The costs of to produce an electrical current. The challenge has been solar cells that convert light from the sun into electricity to improve the efficiency with which solar cells convert have come down dramatically over the past decade. As a sunlight to electricity and to reduce their cost for commer- result, solar power installations have grown rapidly, and cial applications. Initially, solar cell production techniques in 2016 accounted for a significant share of all the new borrowed heavily from the semiconductor industry. Silicon electrical generating capacity installed in the U.S. This solar cells are built on wafers cut from ingots of crystal- grid-scale power market is dominated by silicon solar cells, line silicon, just as are the chips that drive computers. -
IX.3. a Semiconductor Device Primer – Bipolar Transistors LBNL 2
1 IX.3. Bipolar Transistors Consider the npn structure shown below. COLLECTOR n- BASE + +p -IC- + +n- I -B EMITTER The base and emitter form a diode, which is forward biased so that a base current IB flows. The base current injects holes into the base-emitter junction. As in a simple diode, this gives rise to a corresponding electron current through the base-emitter junction. If the potential applied to the collector is sufficiently positive so that the electrons passing from the emitter to the base are driven towards the collector, an external current IC will flow in the collector circuit. The ratio of collector to base current is equal to the ratio of electron to hole currents traversing the base-emitter junction. In an ideal diode IC I nBE Dn / N ALn N D Dn Lp = = = I B I pBE Dp / N D Lp N A Dp Ln Introduction to Radiation Detctors and Electronics, 13-Apr-99 Helmuth Spieler IX.3. A Semiconductor Device Primer – Bipolar Transistors LBNL 2 If the ratio of doping concentrations in the emitter and base regions ND /NA is sufficiently large, the collector current will be greater than the base current. ⇒ DC current gain Furthermore, we expect the collector current to saturate when the collector voltage becomes large enough to capture all of the minority carrier electrons injected into the base. Since the current inside the transistor comprises both electrons and holes, the device is called a bipolar transistor. Dimensions and doping levels of a modern high-frequency transistor (5 – 10 GHz bandwidth) 0 0.5 1.0 1.5 Distance [µm] (adapted from Sze) Introduction to Radiation Detctors and Electronics, 13-Apr-99 Helmuth Spieler IX.3. -
Rendons À Julius, Oskar, Herbert, Greenleaf, Jagadish
Rendons à Julius, Oskar, Herbert, Greenleaf, Jagadish .… ce qui est à eux ! Et comment la France a failli devancer les USA à 48 jours prés! Par Jean- Marie Mathieu RFL3657 [email protected] Nous connaissons tous la découverte du ‘’transfer-resistor’’ ou transistor en 1948 aux USA, événement majeur marquant la naissance de l’ère du semi-conducteur (dite aussi électronique du solide, ou électronique froide). En effet, après la deuxième guerre mondiale William Bradford Shockley chez Bell Telephone Laboratories (BTL) dirige une équipe dont les membres principaux sont John Bardeen et Walter Houser Brattain. Ces deux derniers soudés par une très amicale coopération, travaillent sur la conductivité superficielle du Germanium en utilisant deux contacts polarisés. John est le théoricien (docteur en 1935 et compétant en mécanique quantique), Walter est l’expérimentateur et découvreur. Ils montrent que l’on peut moduler la conductivité, et l’idée qu’il pourrait y avoir un phénomène d’amplification devient évidente. Ainsi inspirés, ils aboutissent rapidement en décembre 1947. De son coté, Shockley travaille sur l’action du champ électrique dans les oxydes métalliques (semi-conducteur) et il sent le succès lui échapper. L’ambiance de l’équipe se dégrade, et Shockley s’oppose à Bardeen et Brattain. Finalement Bardeen et Bratten présentent seuls le ‘’Semi-Conductor Triode ‘’ à la Physical Review le 25 juin 1948 (voir ci dessous). Une photo de presse de 1948 montre de gauche à droite John, William et Walter. On voit ci-dessous un prototype de circuit intégré à 40 transistors pour calculateur de tir fait par Walter Mac Williams à B.T.L.