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Design of a Low Voltage Class-AB CMOS Super Buffer Amplifier with Sub Threshold and Leakage Control Rakesh Gupta
International Journal of Engineering Trends and Technology (IJETT) – Volume 7 Number 1- Jan 2014 Design of a Low Voltage Class-AB CMOS Super Buffer Amplifier with Sub Threshold and Leakage Control Rakesh Gupta Assistant Professor, Electrical and Electronic Department, Uttar Pradesh Technical University, Lucknow Uttar Pradesh, India Abstract-- common problems like input common mode range, This paper describes a CMOS analogy voltage supper output swing, and linearity of the device. In the buffer designed to have extremely low static current resulting form to implement the desired analogue Consumption as well as high current drive capability. A device we apply the CMOS technology with low new technique is used to reduce the leakage power of voltage and low power techniques. Voltage supper class-AB CMOS buffer circuits without affecting dynamic power dissipation. The name of applied buffers are essential building blocks in analog and technique is TRANSISTOR GATING TECHNIQUE, mixed-signal circuits and processing systems, which gives the high speed buffer with the reduced low especially for applications where the weak signal power dissipation (1.105%), low leakage and reduced needs to be delivered to a large capacitive load area (3.08%) also. The proposed buffer is simulated at without being distorted To achieve higher density and 45nm CMOS technology and the circuit is operated at performance and lower power consumption, CMOS 3.3V supply[11]. Consumption is comparable to the devices have been scaled for more than 30 years. switching component. Reports indicate that 40% or Transistor delay times have decreased by more than even higher percentage of the total power consumption 30% per technology generation resulting in doubling is due to the leakage of transistors. -
Bias Circuits for RF Devices
Bias Circuits for RF Devices Iulian Rosu, YO3DAC / VA3IUL, http://www.qsl.net/va3iul A lot of RF schematics mention: “bias circuit not shown”; when actually one of the most critical yet often overlooked aspects in any RF circuit design is the bias network. The bias network determines the amplifier performance over temperature as well as RF drive. The DC bias condition of the RF transistors is usually established independently of the RF design. Power efficiency, stability, noise, thermal runway, and ease to use are the main concerns when selecting a bias configuration. A transistor amplifier must possess a DC biasing circuit for a couple of reasons. • We would require two separate voltage supplies to furnish the desired class of bias for both the emitter-collector and the emitter-base voltages. • This is in fact still done in certain applications, but biasing was invented so that these separate voltages could be obtained from but a single supply. • Transistors are remarkably temperature sensitive, inviting a condition called thermal runaway. Thermal runaway will rapidly destroy a bipolar transistor, as collector current quickly and uncontrollably increases to damaging levels as the temperature rises, unless the amplifier is temperature stabilized to nullify this effect. Amplifier Bias Classes of Operation Special classes of amplifier bias levels are utilized to achieve different objectives, each with its own distinct advantages and disadvantages. The most prevalent classes of bias operation are Class A, AB, B, and C. All of these classes use circuit components to bias the transistor at a different DC operating current, or “ICQ”. When a BJT does not have an A.C. -
High-Speed Rail-To-Rail Class-AB Buffer Amplifier with Compact
electronics Article High-Speed Rail-to-Rail Class-AB Buffer Amplifier with Compact, Adaptive Biasing for FPD Applications Chang-Ho An 1,* and Bai-Sun Kong 2,3,* 1 Department of Digital Electronics, Daelim University College, 29 Imgok-ro, Dongan-gu, Anyang-si 13916, Gyeonggi-do, Korea 2 Department of Electrical and Computer Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Gyeonggi-do, Korea 3 Department of Artificial Intelligence, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon 16419, Gyeonggi-do, Korea * Correspondence: [email protected] (C.-H.A.); [email protected] (B.-S.K.) Received: 21 October 2020; Accepted: 25 November 2020; Published: 29 November 2020 Abstract: A high-slew-rate, low-power, CMOS, rail-to-rail buffer amplifier for large flat-panel-display (FPD) applications is proposed. The major circuit of the output buffer is a rail-to-rail, folded-cascode, class-AB amplifier which can control the tail current source using a compact, novel, adaptive biasing scheme. The proposed output buffer amplifier enhances the slew rate throughout the entire rail-to-rail input signal range. To obtain a high slew rate and low power consumption without increasing the static current, the tail current source of the adaptive biasing generates extra current during the transition time of the output buffer amplifier. A column driver IC incorporating the proposed buffer amplifier was fabricated in a 1.6-µm 18-V CMOS technology, whose evaluation results indicated that the static current was reduced by up to 39.2% when providing an identical settling time. The proposed amplifier also achieved up to 49.1% (90% falling) and 19.9 % (99.9% falling) improvements in terms of settling time for almost the same static current drawn and active area occupied. -
CA3140, CA3140A Datasheet
DATASHEET CA3140, CA3140A FN957 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Rev.10.00 Jul 11, 2005 The CA3140A and CA3140 are integrated circuit operational Features amplifiers that combine the advantages of high voltage • MOSFET Input Stage PMOS transistors with high voltage bipolar transistors on a - Very High Input Impedance (Z ) -1.5T (Typ) single monolithic chip. IN - Very Low Input Current (Il) -10pA (Typ) at 15V The CA3140A and CA3140 BiMOS operational amplifiers - Wide Common Mode Input Voltage Range (VlCR) - Can be feature gate protected MOSFET (PMOS) transistors in the Swung 0.5V Below Negative Supply Voltage Rail input circuit to provide very high input impedance, very low - Output Swing Complements Input Common Mode input current, and high speed performance. The CA3140A Range and CA3140 operate at supply voltage from 4V to 36V • Directly Replaces Industry Type 741 in Most Applications (either single or dual supply). These operational amplifiers are internally phase compensated to achieve stable • Pb-Free Plus Anneal Available (RoHS Compliant) operation in unity gain follower operation, and additionally, have access terminal for a supplementary external capacitor Applications if additional frequency roll-off is desired. Terminals are also • Ground-Referenced Single Supply Amplifiers in provided for use in applications requiring input offset voltage Automobile and Portable Instrumentation nulling. The use of PMOS field effect transistors in the input • Sample and Hold Amplifiers stage results in common mode input voltage capability down to 0.5V below the negative supply terminal, an important • Long Duration Timers/Multivibrators attribute for single supply applications. The output stage (seconds-Minutes-Hours) uses bipolar transistors and includes built-in protection • Photocurrent Instrumentation against damage from load terminal short circuiting to either • Peak Detectors supply rail or to ground. -
Common Gate Amplifier
© 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company COMMON GATE AMPLIFIER • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Common Gate Amplifier A common-gate amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a current buffer or voltage amplifier. In the circuit the source terminal of the transistor serves as the input, the drain is the output and the gate is connected to ground, or common, hence its name. The analogous bipolar junction transistor circuit is the common-base amplifier. Input signal is applied to the source, output is taken from the drain. current gain is about unity, input resistance is low, output resistance is high a CG stage is a current buffer. It takes a current at the input that may have a relatively small Norton equivalent resistance and replicates it at the output port, which is a good current source due to the high output resistance. • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Circuit Topology • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company Waveforms Input Voltage Output Voltage • ACTIVATE solidThinking © 2017 solidThinking, Inc. Proprietary and Confidential. All rights reserved. An Altair Company The common-source and common-drain configurations have extremely high input resistances because the gate is the input terminal. In contrast, the common-gate configuration where the source is the input terminal has a low input resistance. Common gate FET configuration provides a low input impedance while offering a high output impedance. -
Digital Simulation and Recreation of a Vacuum Tube Guitar Amp by John
Digital Simulation and Recreation of a Vacuum Tube Guitar Amp by John Ragland A thesis submitted to the Graduate Faculty of Auburn University in partial fulfillment of the requirements for the Degree of Master of Science Auburn, Alabama May 2, 2020 Keywords: guitar, amplifier, nonlinear modeling, digital audio, vacuum-tube, distortion, signal processing, real-time simulation, guitar effects pedal Copyright 2020 by John Ragland Approved by Thaddeus Roppel, Associate Professor, Electrical and Computer Engineering Christopher Harris, Assistant Professor, Electrical and Computer Engineering Yin Sun, Assistant Professor, Electrical and Computer Engineering Abstract This thesis presents the process of designing, building, and testing a system that will be referred to herein as the Digital Guitar Amplifier. The Digital Guitar Amplifier is a real time digital audio signal processing unit that implements a signal processing algorithm that emulates the sound of a Fender Blues Jr. The Digital Guitar Amplifier fits within a reasonable footprint for a guitar effects pedal. The digital signal processor has CD level audio quality. The signal processing algorithm attempts to maintain the legacy of the vacuum tube within the math and processing of the algorithm by physically modelling the vacuum tube circuit. A mathematical comparison and human hearing survey is presented, which demonstrates that the sound of the Digital Guitar Amplifier compares favorably to the sound of a real Fender Blues Jr. amplifier. The algorithm that is developed can be extended to emulate any tube amplifier. 2 Acknowledgments I would like to thank my advisor Dr. Roppel for his guidance throughout my thesis research and writing process. I would like to thank Dr. -
The Bipolar Junction Transistor (BJT)
The Bipolar Junction Transistor (BJT) Introduction he transistor, derived from transfer resistor, is a three terminal device whose resistance between two terminals is controlled by the third. The term bipolar reflects the fact that T there are two types of carriers, holes and electrons which form the currents in the transistor. If only one carrier is employed (electron or hole), it is considered a unipolar device like field effect transistor (FET). The transistor is constructed with three doped semiconductor regions separated by two pn junctions. The three regions are called Emitter (E), Base (B), and Collector (C). Physical representations of the two types of BJTs are shown in Figure (1–1). One type consists of two n -regions separated by a p-region (npn), and the other type consists of two p-regions separated by an n- region (pnp). Figure (1-1) Transistor Basic Structure The outer layers have widths much greater than the sandwiched p– or n–type layer. The doping of the sandwiched layer is also considerably less than that of the outer layers (typically, 10:1 or less). This lower doping level decreases the conductivity of the base (increases the resistance) due to the limited number of “free” carriers. Figure (1-2) shows the schematic symbols for the npn and pnp transistors 1 College of Electronics Engineering - Communication Engineering Dept. Figure (1-2) standard transistor symbol Transistor operation Objective: understanding the basic operation of the transistor and its naming In order for the transistor to operate properly as an amplifier, the two pn junctions must be correctly biased with external voltages. -
United States Patent (19) 11 Patent Number: 6,034,316
US00603431.6A UnitedO States Patent (19) 11 Patent Number: 6,034,316 HOOver (45) Date of Patent: Mar. 7, 2000 54 CONTROLS FOR MUSICAL INSTRUMENT 5,378,850 1/1995 Tumura. SUSTANERS 5,449,858 9/1995 Menning et al.. 5,523,526 6/1996 Shattil. 76 Inventor: Alan Anderson Hoover, 3937 5,585,588 12/1996 Tumura. Cranbrook Dr., Indianapolis, Ind. 46240 OTHER PUBLICATIONS 21 Appl. No.: 09/258,251 NAMM Statistical Review of U.S. Music Products Industry, 1-1. 1998 National ASSociation of Music Merchants Publication, 22 Filed: Feb. 25, 1999 Carlsbad, CA. (51) Int. Cl." ..................................................... G10H 1/057 52 U.S. Cl. ......................................... 84/738; 84/DIG. 10 (List continued on next page.) 58 Field of Search ................................ 84/738, DIG. 10 Primary Examiner Stanley J. Witkowski 56) References Cited 57 ABSTRACT U.S. PATENT DOCUMENTS A Sustainer is provided for prolonging the vibrations of 472,019 3/1892 Omhart. Strings of a Stringed musical instrument. The instrument has 1,002,036 8/1911 Clement. at least one magnetic pickup means responsive to the 1,893,895 6/1933 Hammond. Vibrations of the Strings. The pickup produces an output 2,001,723 5/1935 Hammond. Signal in response to the vibrations of the instrument Strings. 2,600,870 6/1952 Hathaway et al.. At least one control potentiometer provides the capability to 2,672,781 3/1954 Miessner. control at least one parameter of the output Signal. The 3,185,755 5/1965 Williams et al.. Sustainer comprises a String driver transducer capable of E. 8.7 R et al. -
FET) Field Effect Transistor Projects
50 (FET) Field Effect Transistor Projects F. G. RAYER, T. ENG. (CEI), ASSOC. IERE 50 (F.E.T.) Field Effect Transistor Projects by F. G. RAYER, T. Eng. (CEI), Assoc. IERE BABANI PRESS The Publishing Division of Babani Trading and Finance Co. Ltd. The Grampians Shepherds Bush Road London W6 7NF England INTRODUCTION Field effect transistors find application in a wide variety of cir- cuits. The projects described here include radio frequency am- plifiers and converters, test equipment and receiver aids, tuners, receivers, mixers and tone controls, as well as various miscella- neous devices which are useful in the home. It will be found that in general the actual FET used is not criti- cal, and many suitable types will perform satisfactorily. The FET is a low noise, high gain device with many uses, and the dual gate FET is of particular utility for mixer and other applications. This book should be found to contain something of particular interest for every class of enthusiast - short wave-listener, radio amateur, experimenter, or audio devotee. FET Operation Figure 1 will help clarify the working of the field effect transis- tor. “A” represents the essential elements of the device, which has Source lead 5, Gate lead G, and Drain connection D. The path for current is from Source to Drain through the semiconduc- tor material, this path being termed the channel. With the N-chan- nel FET, the carriers are electrons. The Source is connected to negative of the supply, and Drain to positive. P-type gates are formed on the N-type channel, providing PN junctions. -
Opto Coupled Devices Module 5.0
Module www.learnabout-electronics.org 5 Opto Coupled Devices Module 5.0 What you’ll learn in Module 5.0 Opto Devices & Phototransistors After studying this section, you should be able to: Describe the operation of a phototransistor. Describe typical uses for photo couplers. Describe the advantages and disadvantages of different optocouplers: • Phototransistor types. • Photodiode types. Fig. 5.0.1 Transistor Optocouplers & Opto Sensors Optocouplers or opto isolators consisting of a combination of an infrared LED (also IRED or ILED) and an infra red sensitive device such as a photodiode or a phototransistor are widely used to pass information between two parts of a circuit that operate at very different voltage levels. Their main purpose is to provide electrical isolation between two parts of a circuit, increasing safety for users by reducing the risk of electric shocks, and preventing damage to equipment by potential short circuits between high-energy output and low-energy input circuits. They are also used in a number of sensor applications to sense the presence of physical objects. Transistor Optocouplers The devices shown in Fig. 5.0.1 use phototransistors as their sensing elements as they are many times more sensitive than photodiodes and can therefore produce higher values of current at their outputs. Example 1 in Fig. 5.0.1 illustrates the simplest form of opto coupling consisting of an infrared LED (with a clear plastic case) and an infrared phototransistor with a black plastic case that shields the phototransistor from light in the visible spectrum whilst allowing infrared light to pass through. Notice that the phototransistor has only two connections, collector and emitter, the input to the base being infrared light. -
2/24/2021 16:01 Common Collector CC Amplifier Design Vout Is Not
Common Collector CC Amplifier Design Vout is not inverted so the gains Av and Ai are positive. Designing procedure of common collector BJT amplifier has three areas. First, we have to set the Q-point, which is the DC operating point. Since, there is no specification regarding the Q-point in the design requirements; it leaves the designer enough freedom to choose the operating point as necessary for the application. However, remember that the specifications are in terms of input and output impedance, gain, frequency response characteristics and peak output voltages ultimately restricts the Q-point in a narrow window. It is difficult to derive this point without some intelligent guess and the following steps would work out for the given conditions. We will start to choose a Q-point to allow maximum output voltage swing For the Common Collector configuration, the circuit diagram shown in CC Figure 1. The small signal equivalent model in CC Figure 3. For this configuration, same steps are involved for the calculation of Rb1, Rb2 and Re with few minor changes. Note that Rc is absent in this case. Vpos Vpos Cbyp Vin Vin2 Rb1 Ri Cin Vb Vout NPN Riso Cout Rgen 50 Rb2 Chi Re Chi2 Rload Vneg Function Generator Rin Rin2 Vneg Rout Figure 1: BJT Common Collector CC configuration Page 1 of 9 Revised: 2/24/2021 16:01 CC Part 1: Measure the device parameters use CC Figure 2 Measure transistor parameters ICest , VCEsat, βDC, βDC,VE, VCE, βAC, βDC, ro, and rπ Step CC 1.1: Estimate the Ic collector current Q-point use IC estimate ≈ 2.6 * Iload peak this is not the solution to your design Q-point. -
AD636 Low Level, True RMS-To-DC Converter
Low Level, True RMS-to-DC Converter Data Sheet AD636 FEATURES FUNCTIONAL BLOCK DIAGRAM True rms-to-dc conversion V ABSOLUTE 200 mV full scale IN VALUE Laser-trimmed to high accuracy 0.5% maximum error (AD636K) SQUARER dB 1.0% maximum error (AD636J) COM DIVIDER Wide response capability CAV +VS Computes rms of ac and dc signals +VS 1 MHz, −3 dB bandwidth: V rms > 100 mV CURRENT Signal crest factor of 6 for 0.5% error MIRROR dB output with 50 dB range 10kΩ Low power: 800 μA quiescent current RL +VS Single or dual supply operation IOUT Monolithic integrated circuit BUFFER IN BUF Low cost 10kΩ BUFFER OUT AD636 40kΩ GENERAL DESCRIPTION –VS The AD636 is a low power monolithic IC that performs true –V S 00787-001 rms-to-dc conversion on low level signals. It offers performance Figure 1. that is comparable or superior to that of hybrid and modular converters costing much more. The AD636 is specified for a The AD636 is available in two accuracy grades. The total error of the signal range of 0 mV to 200 mV rms. Crest factors up to 6 can J-version is typically less than ±0.5 mV ± 1.0% of reading, while be accommodated with less than 0.5% additional error, allowing the total error of the AD636K is less than ±0.2 mV to ±0.5% of accurate measurement of complex input waveforms. reading. Both versions are temperature rated for operation between 0°C and 70°C and available in 14-lead SBDIP and 10-lead The low power supply current requirement of the AD636, TO-100 metal can.