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Etude, Réalisation Et Caractérisation De Memristors Organiques Électro-Greffés En Tant Que Nanosynapses De Circuits Neuro-Inspirés Théo Cabaret

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Etude, Réalisation Et Caractérisation De Memristors Organiques Électro-Greffés En Tant Que Nanosynapses De Circuits Neuro-Inspirés Théo Cabaret Etude, réalisation et caractérisation de memristors organiques électro-greffés en tant que nanosynapses de circuits neuro-inspirés Théo Cabaret To cite this version: Théo Cabaret. Etude, réalisation et caractérisation de memristors organiques électro-greffés en tant que nanosynapses de circuits neuro-inspirés. Autre [cond-mat.other]. Université Paris Sud - Paris XI, 2014. Français. NNT : 2014PA112168. tel-01196515 HAL Id: tel-01196515 https://tel.archives-ouvertes.fr/tel-01196515 Submitted on 10 Sep 2015 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. UNIVERSITÉ PARIS-SUD ÉCOLE DOCTORALE : STITS (422) Laboratoire d’innovation en chimie des surfaces et nanosciences, IRAMIS, CEA & Nano-Architecture, IEF, Université Paris-sud THÈSE DE DOCTORAT PHYSIQUE par Théo CABARET Etude, réalisation et caractérisation de memristors organiques électro-greffés en tant que nanosynapses de circuits neuro-inspirés Date de soutenance : 09/09/2014 Composition du jury : Directeur de thèse : Jacques-Olivier KLEIN Professeur des Universités (Université Paris-Sud) Encadrant de thèse : Vincent DERYCKE Directeur de laboratoire (CEA de Saclay) Rapporteurs : Ian O’CONNOR Professeur des Universités (Ecole centrale Lyon) Dominique VUILLAUME Directeur de recherche (CNRS) Examinateurs : Jean-Christophe LACROIX Professeur des Universités (Université Paris Diderot) Cristell MANEUX Professeur des Universités (Université de Bordeaux 1) Arnaud BOURNEL Professeur des Universités (Université Paris-Sud) Table des matières Remerciements Je tiens à remercier en premier les rapporteurs de ce manuscrit, Mr O’Connor et Mr Vuillaume ainsi que le président du jury Mr Lacroix et les examinateurs Mme Maneux et Mr Bournel. Je remercie aussi mon directeur de thèse Jacques-Olivier Klein ainsi que mon encadrant Vincent Derycke. Je tiens aussi à remercier toutes les personnes qui m’ont accueilli au sein des différents laboratoires dans lesquels j’ai pu travailler, je pense entre autres à Eric Vincent, Serge Palacin et François Daviaud. Je veux aussi chaleureusement remercier Bruno Jousselme pour l’aide qu’il m’a apportée pour toute la partie électrochimie de mon doctorat. Enfin je veux remercier toutes les personnes qui m’ont aidé pendant ces trois années. Je pense notamment à Laure, ma correctrice attitrée (mais vraiment pas que ça même si je pense que ce rôle lui a laissé une impression durable) qui a dû lire ma thèse presque autant de fois que moi, à Olivier Segut, Olivier Bichler, Jean Etienne Lorival et Djaafar Chabi pour leur connaissance dans le domaine des circuits qu’ils ont bien voulu partager avec moi mais aussi à Gaga (non pas la chanteuse), Léa, Mr Cordialement (aussi appelé Joël), Nassim, Ploplo (dit Ploplounet ou Diplodocus), Tiphaine, Patrick et toutes les autres personnes qui ont croisé ma route pendant ces trois années. Enfin, je tiens à remercier ma famille et ma chérie pour leur soutien indéfectible. Table des matières Table des matières Table des matières ................................................................................................................................. 1 Table des acronymes ............................................................................................................................. 3 Introduction ........................................................................................................................................... 5 Chapitre 1 : Electronique neuromorphique et memristors ............................................................... 9 I. Intérêt des memristors pour l’électronique neuromorphique .......................................................................... 9 a) Contexte et principe de fonctionnement des réseaux de neurones artificiels............................................. 9 b) Rôle des memristors dans le contexte des réseaux de neurones artificiels .............................................. 13 II. Les memristors: contexte et applications potentielles.................................................................................. 15 a) Origines et cadre théorique des memristors ............................................................................................. 15 b) Les différentes applications potentielles des memristors ........................................................................ 19 III. Historique et description physique de différents types de memristors ....................................................... 21 a) Les memristors de type métal-isolant-métal (MIM) ................................................................................ 22 b) Les memristors à base de matériaux à changement de phase .................................................................. 28 c) Les memristors à base de matériaux organiques ..................................................................................... 31 IV. Le circuit mixte du projet MOOREA ......................................................................................................... 39 a) L’algorithme d’apprentissage .................................................................................................................. 39 b) Critères nécessaires à une intégration efficace du memristor .................................................................. 41 Références ................................................................................................................................................... 44 Chapitre 2 : Une proposition de memristor organique .................................................................... 49 I. Mémoires à base de complexes métalliques : état de l’art ............................................................................ 49 a) Dispositif à base de SAMs ou de molécules uniques .............................................................................. 49 b) Dispositifs à base de films de complexes métalliques ............................................................................. 51 II. Mémoires à base de films electrogreffés de Fe2+tris(bipyridine) ................................................................. 53 a) Synthèse de la molécule active ................................................................................................................ 53 b) Méthode de fabrication et propriétés des films ....................................................................................... 54 III. Les méthodes de fabrication des dispositifs ............................................................................................... 63 a) Les méthodes de reprise de contact sur une couche organique : état de l’art .......................................... 63 b) La jonction horizontale............................................................................................................................ 69 c) La jonction crossbar intégrant un nanotube de carbone comme électrode .............................................. 70 d) Du dispositif individuel aux matrices ...................................................................................................... 74 Références ................................................................................................................................................... 76 Chapitre 3 : Etude du memristor et de ses performances ............................................................... 79 I. Mode de fonctionnement des memristors ..................................................................................................... 79 II. Endurance, variabilité intra-dispositif et temps de rétention ....................................................................... 84 a) Endurance et variabilité ........................................................................................................................... 84 b) Différences entre dispositifs à nanotubes et dispositifs horizontaux ....................................................... 85 c) Temps de rétention .................................................................................................................................. 87 III. Etats de conductivité intermédiaires ........................................................................................................... 89 a) Caractéristiques des états intermédiaires atteints par limitation externe du courant ............................... 89 b) Caractéristiques des états intermédiaires atteints par des rampes de tension .......................................... 90 c) Caractéristiques des états intermédiaires atteints par des impulsions de tension..................................... 91 d) Caractéristiques des états intermédiaires atteints par des séries d’impulsions de tension ....................... 92 IV. Endurance, variabilité intra-dispositif et temps de rétention en mode impulsionnel .................................. 94 a) Endurance et rétention ............................................................................................................................. 94 b) Vitesse de programmation ......................................................................................................................
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