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(1)4» W Transmission US 7,711,015 B2 Page 2 US007711015B2 (12) Unlted States Patent (10) Patent N0.2 US 7,711,015 B2 Holonyak, Jr. et al. (45) Date of Patent: May 4, 2010 (54) METHOD FOR CONTROLLING OPERATION 4,845,535 A 7/1989 Yamanishi et a1. ........ .. 315/172 OF LIGHT EMITTING TRANSISTORS AND 4,958,208 A 9/1990 Tanaka ........... .. 357/34 LASER TRANSISTORS 5,003,366 A 3/1991 Mishima et al. 357/34 5,239,550 A 8/1993 Jain .......................... .. 372/45 75 _ . _ 5,293,050 A 3/1994 Chapple-Sokolet al. .... .. 257/17 ( ) Inventors‘ H‘irlonyagilh" UrbanIaL’ IL gs)’ 5,334,854 A 8/1994 Ono et al. ................... .. 257/13 1 0,“ eng’ ampalgn’ (U )’ 5,389,804 A 2/1995 Yokoyama et al. 257/197 Gabnelwalter, Urbana> IL (Us) 5,399,880 A 3/1995 Chand ............ .. 257/21 _ 5,414,273 A 5/1995 Shimura et al. ....... .. 257/17 (73) Asslgneei Th1? Board 0fTr_l1st_ees of The 5,588,015 A 12/1996 Yang .............. .. .. 372/45012 Unlverslty 0f 111111018, Urbana, IL (US) 5,684,308 A 11/1997 Lovejoy etal. ........... .. 257/184 5,723,872 A 3/1998 Seabaugh et al. ........... .. 257/25 ( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 (Continued) USC‘ 1540’) by 240 days‘ FOREIGN PATENT DOCUMENTS (21) APP1- NO-I 11/805359 JP 61231788 10/1986 (22) Filed: May 24, 2007 (Continued) (65) Prior Publication Data OTHER PUBLICATIONS Us Zoos/0240173 A1 Oct 2’ 2008 Light-Emitting Transistor: Light Emission From InGaP/GaAs Heterojunction Bipolar Transistors, M. Feng, N. Holonyak, Jr., and Related US. Application Data W‘ Hafez’ Appl' Phys‘ Lett‘ 84’ 151 (2004)‘ (60) Provisional application No. 60/921,425, ?led on Apr. (Continued) 2’ 2007' Primary ExamineriDung T Nguyen (51) Int- Cl‘ (74) Attorney, Agent, or FzrmiMartm Novack H01S 3/113 (2006.01) (57) ABSTRACT (52) US. Cl. ............................. .. 372/11; 372/1; 372/30; _ _ _ 372/3 8'03 A method for controlling operation of a transistor includes the (58) Fleld of Classl?catlon Search ................. .. 372/11, following Steps: providing a bipolar transistor having emitter’ _ _ _ 372/1’ 30 base and collector regions; applying electrical signals to the See aPPhCaUOn ?le for Complete Search hlstory- transistor to produce light emission from the transistor; (56) References Cited effecting photon-assisted tunneling of carriers in the transis tor With self-generated photons of the light emission, and U.S. PATENT DOCUMENTS controlling operation of the transistor by controlling the pho ton-assisted tunneling. 2,569,347 A 9/1951 Shockley 4,485,391 A 11/1984 Poulain et al. .............. .. 357/19 4,710,936 A 12/1987 Shibata et a1. .............. .. 372/45 29 Claims, 11 Drawing Sheets (3) V02: V55: 0 Equilibrium se iCollector Sub-Collector (1)4» w Transmission US 7,711,015 B2 Page 2 US. PATENT DOCUMENTS P. Grossman, and J. Choma, Jr., “Large Signal Modeling of HBT’s Including Self-Heating and Transit Time Effects” IEEE Transactions 5,780,880 A 7/1998 Enquist .................... .. 257/197 On Microwave Theory And Techniques, vol. 40, No. 3, Mar. 1992. 5,796,714 A 8/1998 Chino et al. 372/50 Y. Mori, J. Shibata,Y. Sasai, H. SeriZawa, and T. Kajiwar, “Operation 6,337,494 B1 1/2002 Ryum et al. 257/197 Principle Of The InGaAsP/InP Laser Transistor”, Appl. Phys. Lett. 6,479,844 B2 11/2002 Taylor ......... .. 257/192 47(7), Oct. 1, 1985. 6,737,684 B1 5/2004 Takagiet al. 257/194 J. Genoe, C. Van Hoof, K. Fobelets, R. Mertens, and G. Borghs, “pnp 6,974,969 B2 12/2005 Taylor ...... .. .. 257/24 Resonant Tunneling Light Emitting Transistor” Appl. Phys. Lett. 62 7,091,082 B2 8/2006 Feng et al. .. 438/235 (9), Aug. 31, 1992. 7,286,583 B2 10/2007 Feng et al. 372/30 P. Berger, N. Chand, and N. Dutta, “An AlGaAs Double-Heterojunc 2002/0030195 A1 3/2002 Yoshiiet al. 257/101 tion Bipolar Transistor Grown By Molecular-Beam Epitaxy”, Appl. 2005/0040387 A1* 2/2005 Feng et al. .. 257/14 2005/0040432 A1 2/2005 Feng et al. 257/198 Phys. Lett. 59 (9), Aug. 26, 1991. 2005/0054172 A1 3/2005 Feng et al. 438/313 E. Zanoni, L. Vendrame, and P Pavan, “Hot-Electron 2006/0208290 A1 9/2006 Feng et al. 257/292 Electroluminescence in AlGaAs/GaAs Heterojunction Bipolar Tran 2007/0201523 A1 8/2007 Walter et a1. 372/43 sistors”, Appl. Phys. Lett. 62 (4), Jan. 25, 1993. 2009/0115346 A1* 5/2009 Walter et a1. .............. .. 315/291 M. Harris, B. Wagner, S. Halpern and M. Dobbs, “Full Two-Dimen sional Electroluminescent (EL) Analysis of GaAs/AlGaAs HBTs”, FOREIGN PATENT DOCUMENTS IEEE 99CH36296. 37th Annual International Reliability Physics Symposium, San Diego., California, 1999. JP 2007067023 3/2007 K. Wang, P. Asbeck, M. Chang, G. Sullivan, and D. Millar, WO WO2005/020287 3/2005 “Noninterfering Optical Method Of HBT Circuit Evaluation”, Elec WO WO2006/093883 8/2006 tronics Letters, vol. 25 No. 17, Aug. 17, 1989. J. Bardeen and W.H. Brattain, “The Transistor, A Semi-conductor OTHER PUBLICATIONS Triode,” Physical Review 74, (1948). W. Shockley, “The Theory of p-n Junctions in Semiconductors and Quantum-Well-Base Heterojunction Bipolar Light-Emitting Tran p-n Junction Transistors,” Bell System Technology Journal 28, 435 sistor, M. Feng, N. Holonyak, Jr., and R. Chan, Appl. Phys. Lett. 84, 489 (1949). 1952 (2004). Type-II GaAsSb/InP Heterojunction Bipolar Li ght-Emitting Transis R.N. Hall, G.E. Fenner, J.D. Kingsley, T.J. Soltys, and R0. Carlson, tor, M. Feng, N. Holonyak, Jr., B. Chu-Kung, G. Walter, and R. Chan, “Coherent Light Emission From GaAs Junctions,” Phys. Rev. Lett., Appl. Phys. Lett. 84, 4792 (2004). vol. 9. pp. 366-368, Nov. 1, 1962. Laser Operation Of A Heterojunction Bipolar Light-Emitting Tran M.I. Nathan, W.P. Dumke, G. Burns, F.H. Dill, Jr., and G. Lasher, sistor, G. Walter, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. Phys. “Stimulated Emission of Radiation From GaAs p-n Junction,” Appl. Lett. 85, 4768 (2004). Phys. Lett., vol. 1, pp. 62-64. Nov. 1962. Microwave Operation And Modulation Of A Transistor Laser, R. N. Holonyak, Jr. and SF. Bevacqua, “Coherent (Visible) Light Emis Chan, M. Feng, N. Holonyak, Jr., and G. Walter, Appl. Phys. Lett. 86, sion From GaAs l_XPX Junctions,” Appl. Phys. Lett., vol. 1, pp. 82-83, 131114 (2005). Dec. 1962. Room Temperature Continuous Wave Operation Of A Heterojunc TM. Quist, R.H. Rediker, R.J. Keyes, W.E. Krag, B. Lax, A.L. tion Bipolar Transistor Laser, M. Feng, N. Holonyak, Jr., G. Walter, McWhorter, and H.J. Zeiger, “Semiconductor Maser of GaAs,” Appl. and R. Chan, Appl. Phys. Lett. 87, 131103 (2005). Phys. Lett., vol. 1. pp. 91-92, Nov. 1962. Visible Spectrum Light-Emitting Transistors, F. Dixon, R. Chan, G. H. Kroemer, “Theory Of A Wide-Gap Emitter For Transistors,” Pro Walter, N. Holonyak, Jr., M. Feng, X. B. Zhang, J. H. Ryou, and R. D. ceedings ofthe IRE 45, 1535-1537 (1957). Dupuis, Appl. Phys. Lett. 88, 012108 (2006). W. HafeZ, J.W. Lai and M. Feng, “InP/InGaAs SHBTs with 75 nm The Transistor Laser, N. Holonyak, M Feng, Spectrum, IEEE vol. 43, Collector and fr>500 GHZ”, Electronic Letters, vol. 39, No. 20, Oct. Issue 2, Feb. 2006. 2003. Signal Mixing In A Multiple Input Transistor Laser Near Threshold, W. HafeZ, J.W. Lai, and M. Feng “Record fT and fT + fMAX Perfor M. Feng, N. Holonyak, Jr., R. Chan, A. James, and G. Walter, Appl. mance of InP/InGaAs Single Heterojunction Bipolar Transistors,” Phys. Lett. 88, 063509 (2006). Electronics Letters, May 2003. Collector Current Map Of Gain And Stimulated Recombination On W. HafeZ, J .W. Lai, and M. Feng. “Sub-micron InP/InGaAs Single The Base Quantum Well Transitions Of A Transistor Laser, R. Chan ,N. Holonyak, Jr. ,A. James , G. Walter, Appl. Phys. Lett. 88, 143508 Heterojunction Bipolar Transistors With fT of 377 GHZ,” IEEE Elec (2006). tron Device Letters, May 2003. Collector Breakdown In The Heterojunction Bipolar Transistor laser, W. HafeZ, J .W. Lai and M. Feng, “Vertical scaling of 0.25 um Emitter G. Walter, A. James, N. Holonyak, Jr., M. Feng, and R. Chan, Appl. InP/InGaAs Single Heterojunction Bipolar Transistors With fTof 452 Physics Lett. 88, 232105 (2006). GHZ,” IEEE Electron Devices Letters, Jul. 2003. High-Speed (Z1 GHZ) Electrical and Optical Adding, Mixing, and P. Enquist, A. Paolella, A.S. Morris, F.E. Reed, L. DeBarros, A.J. Processing of Square-Wave SignalsWith aTransistor Laser, M. Feng, Tessmer, and J .A. Hutchby, “Performance Evaluation Of Heterojunc N. Holonyak, Jr., R. Chan, A. James, and G. Walter, IEEE Photonics tion Bipolar Transistors Designed For High Optical Gain”, Research Technology Lett., vol. 18, No. 11, Jun. 1, 2006. Triangle Institute, Research Triangle Park, NC, ARL, Research Graded-Base InGaN/GaN Heterojunction Bipolar Light-Emitting Laboratory, Ft. Monmouth, NJ, Applied Research and Technology, Transistors, B.F. Chu-Kung, M. Feng, G. Walter, and J. Holonyak, Jr. Wake Forest, NC, , IEEE, pp. 278-287, 1995. et al., Appl. Physics Lett. 89, 082108 (2006). Yukihiko Arai, Masaaki Sakuta, Hiroshi Takano, Takashi Usikubo, Carrier Lifetime And Modulation Bandwidth of A Quantum Well RyoZo Furukawa, and Masao Kobayashi, “Optical Devices From AlGaAs/InGaP/GaAs/InGaAs Transistor Laser, M. Feng, N. AlGaAs-GaAs HBTs Heavily Doped With Amphoteric Si”, IEEE Holonyak, Jr., A. James, K. Cimino, G. Walter, and R. Chan, Appl. Transactoins On Electron Devices, pp. 632-638, V0. 42. No. 4, Apr. Phys. Lett 89, 113504 (2006). 1995. Chirp In A Transistor laser: FranZ-Keldysh Reduction of The G.W.
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