CS Front Cover vFinal DR 26/4/10 10:55 Page 1
Optical switching Faster and smaller
QCLs The leap from toys to tools
Taiwan LEDs Back lit displays and street lighting fuels growth
LED yield EPI defect and MOCVD control
Vacuum and Abatement Integrated solution
SemiLeds Vertical architecture boosts performance
Brighter and cheaper LED start up company The right cut with new offering Opportunities from new LED competition How to stay competitive sapphire approach
An Angel Business Communications publication April/May 2010 Volume 16 Number 3 Temescal is now a division of Ferrotec
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CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY editorialview
April/May 2010 Volume 16 Number 3
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Account Managers Shehzad Munshi [email protected] Quantum cascade lasers +44 (0)1923 690215 Tommy Beazley [email protected] +44 (0)1923 690222 USA Representatives shake off the R&D tag Brun Media Tom Brun E: [email protected] Tel: 724 539-2404 Janice Jenkins E: [email protected] The quantum cascade laser represents the pinnacle of bandgap engineering. Tel: 724-929-3550 By controlling of the thickness and composition of hundreds of very thin layers, Director of Logistics Sharon Cowley [email protected] engineers are able to tweak the wavefunctions of the electrons and holes that +44 (0)1923 690200 skitter through this structure, and ultimately fine-tune its emission. Design & Production Manager Mitchell Gaynor [email protected] +44 (0)1923 690214 Thanks to this control, quantum cascade lasers can span a range of wavelengths that are outside the grasp of their more conventional, III-V Circulation Director Jan Smoothy [email protected] cousins. This includes vast swathes of the infrared spectrum with energies that +44 (0)1923 690200 can be used to probe the absorption lines of various gases, and far longer Subscriptions Manager wavelengths close to a terahertz. Debbie Higham [email protected] +44 (0)1923 690220 If powerful enough, easy-to-use and affordable quantum cascade lasers were Chief Operating Officer Stephen Whitehurst [email protected] available, then these sources would have a great chance of finding application +44 (0)2476 718970 in detecting gases, distracting heat-seeking missiles and aiding the Directors construction of terahertz imaging systems. But for many years this class of Bill Dunlop Uprichard – CEO Stephen Whitehurst – COO laser, which was invented in the mid-1990s, has produced relatively feeble Jan Smoothy – CFO powers and been caged in a cryostat. But now the tide is turning … Haroon Malik, Jackie Cannon, Scott Adams, Sharon Cowley, Sukhi Bhadal
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Compound Semiconductor is published eight times a year on a controlled circulation basis. More recently, the US firm Pranalytica has produced quantum cascade lasers Non-qualifying individuals can subscribe at: £105.00/€158 pa (UK & Europe), £138.00 pa (air mail), $198 pa (USA). that deliver several Watts at room temperature via single-mode emission. This Cover price £4.50. All information herein is believed to be correct at time of advance has come through a radical change in the structure of the laser: a going to press. The publisher does not accept responsibility for any errors and omissions. The views expressed in this change in the way that phonons are used to help to drive electrons to their publication are not necessarily those of the publisher. Every effort has been made to obtain copyright permission for the material contained in this publication. lowest energy level within the laser. Angel Business Communications Ltd will be happy to acknowledge any copyright oversights in a subsequent issue of the publication. Like Razeghi and her co-workers, the team at Pranalytica have detailed their Angel Business Communications Ltd © Copyright 2010. All rights reserved. Contents may not be efforts in an exclusive feature for Compound Semiconductor. If you want to reproduced in whole or part without the written consent of the publishers. The paper used within this magazine is read about the details of this new type quantum cascade structure, and the produced by chain of custody certified manufacturers, guaranteeing sustainable sourcing. performance that it has realized, you can find their feature on p. 22.
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CONNECTING THE COMPOUND SEMICONDUCTOR COMMUNITY contents
Volume 16 Number 3
industry & technology
Optical switches need to consume less power, cut their footprint and speed up if they are to stand a 13 good chance of serving future needs. One way to realize all this and more is to turn to switches that employ microdisk or photonic crystal lasers.
Sapphire can form the bedrock forthe growth of relatively thick, single crystal epitaxial films of 18 rhombohedral SiGe. This material has much higher carrier mobility than single crystal silicon, and could spur the development of ultra-fast chipsets.
A revolutionary active region is the driver behind the record single-facet output powers emanating from a 22 new quantum cascade lasers (QCLs). Tawian’s LED industry has weathered the global economic storm, and it is now recovering fast thanks 26 to increased deployment of this chip in street lighting and display backlights.
LED device yield is impacted by epi defect correlation and MOCVD process control. Challenges 13 31 that are assisted with in line inspection techniques. HBLED manufacturers are faced with many challenges including vacuum and abatement. There 36 are benefits of combination technologies. Combining a metallic foundation with a vertical current path creates an LED that prevents current 39 crowding, realizes excellent thermal management, and delivers high efficacies and long lifetimes.
A UK start-up is claiming to have developed a novel device treatment technology that paves the way for 18 26 42 the manufacture of brighter, lower-cost LEDs
news
Flexible OLEDs from 07 Fraunhofer
CIGS efficiency records. 11 JV for CIGS project
LETI shows off CMOS laser. 12 GaN growth predicted
April/May 2010 www.compoundsemiconductor.net 5 Project11 14/1/10 12:58 Page 44
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led news
with a barrier layer system, patented by the Dr. Nicolas Schiller, head of the business Fraunhofer FEP, without compromising its unit Coating of Flexible Products at the FEP Flexible luminosity. adds, “The coating processes opens up potential to reduce costs.” OLEDs from Dr. Christian May, head of the business unit, Organic Materials and Systems at the The technology developed marks a Fraunhofer IPMS stated, “Developing the milestone towards industrial manufacturing Fraunhofer flexible OLED, experience from both of flexible OLEDs. Other devices, such as institutes has been united. We integrated organic solar cells or memory systems, Low-cost, energy efficient lighting becomes the barrier layer systems from Fraunhofer could be developed. The work is going to tangible thanks to barrier coating systems FEP into technology of the IPMS.” be continued in a larger consortium. for flexible OLEDs developed by Fraunhofer researchers. Organic light-emitting diodes (OLEDs) are nowadays synonymous with next generation lighting, which could replace common light-bulbs in a couple of years. They convert electricity very efficiently into light of high quality. However, existing OLEDs on the market are costly and mostly deposited on rigid materials such as glass.
Scientists from two Fraunhofer Institutes in Germany assembled flexible, large-area organic light-emitting diodes with barrier layer systems which are necessary for long device lifetimes. The Fraunhofer Institute for Photonic Microsystems IPMS and the Fraunhofer Institute for Electron Beam and Plasma Technology FEP for the first time manufactured a flexible OLED in a roll-to-roll production and encapsulated the device in a subsequent inline-process. This process design would allow the production in a single plant. The steps were developed in the frame of the project ROLLEX, funded by the German federal ministry of education and research (BMBF).
Professor Karl Leo, director of the Fraunhofer IPMS, confirms: “The successful assembly of an OLED in a roll-to-roll process means a breakthrough on the way to highly efficient and competitive devices. The project shows the capacity of Dresden as a focal point for organic electronics.”
A major component of flexible organic LEDs is the homogenous encapsulation of luminescent layers with transparent barrier layer systems. Permeation of only small amounts of humidity or oxygen shortens the lifetime of the devices drastically, which explains the strong need for barrier systems protecting the luminescent materials on a large area without defects.
However, the barrier layers should not absorb the emitted light and should not interfere with the colours of the light. The researchers of the Fraunhofer Institutes deposited OLED materials on a cheap aluminium foil in a roll-to-roll pilot plant, further encapsulated the luminescent foil
April/May 2010 www.compoundsemiconductor.net 7 EuroLED Advertorial Final 26/4/10 10:56 Page 8
advertorial expo
euroLED - Europe’s leading event in Solid State Lighting! This event will be the 7th annual euroLED consisting of conference, exhibition and gala dinner. euroLED 2010 will continue to promote the Everlight – Anglia – MARL – and Arrow all exhibitors includes The Bergquist Company, global LED industry, developing themes of premier sponsors of euroLED 2010. Forge Europa, Carclo, Silica and Farnell. future lighting, intelligent energy and the New to euroLED 2010 is the Conference influencers of the low carbon economy . This Expert Panel, whose members have a wealth On 9th June 2010 the industry will be invited event supports future Birmingham Science of commercial and technical expertise. to the Gala Dinner which attracted 220 Park Aston’s focus on innovation to help drive international delegates last year. the knowledge economy. The Panel comprises Lee Bensley (Philips ACDC will be showcasing their Double Decker Lighting), Geoff Williams (Thorn Lighting), Jon LED Bus suitable for networking area for euroLED 2009 provided an impressive array of Potter (Future Lighting), Dr Gareth Jones delegates. new approaches in solving technical challenges (PPE/KTN), Paul Drosihn (Arrow Lighting) and and 2010 is expected to offer much more. LED Dan Scott (Anglia Lighting). euroLED is being supported by The Lighting based technology is being increasingly viewed Industry Federation & The Lighting Association, as significant segment within energy efficient The euroLED 2010 conference showcase who will be hosting seminars / workshops in “Clean Technology” sector, by addressing current innovation; look forward to next the exhibition arena over the two days. environmental issues. generation products and also identify future development opportunities for the industry. UKTI are supporting the show with a 1 to 1 The market had significant changes since meetings area for UK industries to discuss 2009, with niche high value applications Key attractions: ambitions and strategic direction. attracting collaborative R&D with products in Conference showcases innovation for illumination and lighting currently competing in lighting industry with a highly respected Expert To participate in euroLED 2010, please visit the a $2Bn market. Driving innovation forward in Panel. official euroLED website: www.euroLED.org.uk the LED industry are organisations such as Extended exhibition space from 2009. or contact Eve Gaut, euroLED Manager at Philips Lighting, OSRAM – Future Lighting - As well as the premier sponsors, euroLED [email protected] or on +44 (0) 121 250 3515.
8 www.compoundsemiconductor.net April/May 2010 Riber vFinal 26/4/10 11:18 Page 9
interview industry
Achieving GaN heights
Riber is a French company that has evolved into the leading suppliers of Molecular Beam Epitaxy (MBE) for the Gallium Nitride (GaN) industry. Michel Picault, Marketing Director and Pierre Bouchaib, Sales Director of Riber spoke to Compound Semiconductor about the outlook for the industry and for their company.
GaN for LED is unique in its ability to produce blue A light that can be converted to white light. GaN for CATV enables high power in a range of microwave frequency spectrums, for transmission across a wide band. GaN for Solar can capture green and blue light from the solar spectrum increasing the energy captured for higher currents in the PV cell. In RF and diode devices GaN can sustain high voltage for new devices required for power electronics in electrical or hybrid cars (900 volts). In any electrical car at least 5 to 7 heavy duty diodes or IC’s made out of GaN are necessary.
what is Compact21 is and why was it funded by Q the European Community (EC)?
Compact21 is a research laboratory working on A MBE with a goal to improve manufacturing of monocrystaline films of compound semiconductor materials used in microwave, optoelectronic and sensing applications. Funding was received through a EC R&D programme because GaN is viewed as an enabler for future microwave and lasers devices. Riber states they are a world leader in MBE Q products. Why do you think this is true and will Some industry analysts expect a bottleneck in an increase in application demand for GaN encourage Q MOCVD tools that may impact on the HB LED new players aiming for some of your market share? supply. Do you think this could be a problem in?
Riber is the world leader in MBE with more than There might be tensions in MOCVD supply, and A 50% of the market share on a yearly basis with A some end-users might consider developing their twice as many installed tools than the next competitor. own tools, but supply will ultimately catch-up demand. This has been the case since MBE began in the 1970’s. Riber’s customer base is evenly distributed across global Why is your MBE system more competitive than regions with around 30% in each. Riber offers the widest Q those produced by your rivals and what does range of MBE systems covering diverse applications (IIIV, 2010 hold for Riber? II VI, ZnO) and usages (R&D , pilot line and Production). We have preferred Ammonia Nitride production instead of This depends upon application. For the GaN LED RF plasma although we have such systems in the field. A market, MOCVD is a better choice. Compared to The Ammonia Nitride approach allows 3 to 5 times higher other MBE systems our GaN Systems have proven to growth speeds which is crucial for a customer’s costs. produce good GaN structures (Mainly in RF) over large There are few competitors at present and Riber’s substrate in a real production environment. We believe experience makes it difficult for new players. 2010 will be a good year in terms of R&D MBE Systems but also in production systems sales. We will continue to Why is GaN so important across such a wide increase our MBE market while diversifying into Q range of communities eg LEDs, solar, breakthrough technologies such as OLED and CIGS for community access television components (CATV)? our effusion cells.
April/May 2010 www.compoundsemiconductor.net 9 Project3 26/4/10 10:32 Page 8
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For more information, please contact Oxford Instruments Plasma Technology: Tel: +44 (0)1934 837 000 Email: [email protected] www.oxford-instruments.com/plasma News vFinalDR 26/4/10 11:05 Page 11
solar news CIGS - Efficiences near 16%
A Japanese team of scientists have They have worked on the technical The result of this important study will be demonstrated the world's highest challenges of alkali addition control and published in the 57th Spring Meeting, 2010, photovoltaic energy conversion efficiency integration processes, and succeeded in of The Japan Society of Applied Physics, among monolithically integrated flexible solar drastically enhancing the photovoltaic held at Shonan Campus, Tokai University, in cell submodules (certified efficiency) of 15.9 energy conversion efficiency of an March , 2010, and at the 35th IEEE % (aperture area: 75.7 cm2) using a CIGS integrated-type flexible CIGS solar cell Photovoltaic Specialists Conference to be thin film (a solar cell material). using a submodule-size substrate of the held in June, 2010 where the scientists wioll practical use level. present their findings. Lightweight and flexible solar cells are attracting attention as a key technology for wider use of photovoltaic power generation; we can expect wider applications because they can be installed even at locations where current solar cell panel modules cannot be installed. However, it was extremely difficult to obtain photovoltaic energy conversion efficiency higher than 10 % in a flexible solar cell module of an integrated structure. Cambrios and Ascent Announce collaboration on Solar Power
Ascent Solar Technologies is a developer of flexible thin-film photovoltaic modules while Cambrios uses nanotechnology to simplify electronic materials manufacturing processes and improve end-product performance. Ascent says it will investigate whether its Copper-Indium-Gallium- Selenium (CIGS) photovoltaics thin-film solar modules can be used with Cambrios' ClearOhm coatings. ClearOhm films produce a transparent, conductive film by wet processing are alleged to have improved properties by comparison to traditional transparent conductive oxides.
Although CIGS solar cells are not as efficient as crystalline silicon solar cells they are expected to be substantially cheaper due to the much lower material cost and potentially lower fabrication cost. Another advantage of CIGS over crystalline silicon is that they have a direct bandgap and thus require much thinner layers to absorb the same amount of light.
"Ascent Solar has very high efficiency CIGS solar cells so they are the perfect partner for this program," Cambrios Chief Executive Officer Michael Knapp said in a statement.
April/May 2010 www.compoundsemiconductor.net 11 News vFinalDR 26/4/10 11:05 Page 12
news industry
The enormous computing power of multi- processor systems and manufacturing tools Leti shows off being considered will require data transfer new CMOS rates of more than 100Terabit/s. These data rates may be needed on-chip, e.g. in multi-core processors, which are laser expected to require total on-chip data rates of up to 100TB/s by 2015, or off-chip, e.g. Letihas announced that it has demonstrated in short-distance data interconnects, a fully CMOS-compatible laser source requiring up to 100TB/s over a distance of coupled to a silicon waveguide, a major 10-100 meters. Optical interconnects are milestone toward the WADIMOS project’s the only viable technology for transmitting goal of fabricating silicon photonics circuits these amounts of data. in CMOS foundries. Besides a huge data rate, optical WADIMOS is an EU-funded research interconnects also allow for additional project to demonstrate a photonic flexibility through the use of wavelength interconnect layer on CMOS. Leti’s partners division multiplexing. This feature may be in the project, which is coordinated by help realize more intelligent interconnect Imec, include STMicroelectronics, MAPPER systems such as the optical network-on-chip Lithography, the Lyon Institute of system that the WADIMOS project also is Nanotechnology (ILN) and the University of studying. Trento. WADIMOS, which is an abbreviation for Working with a circuit design from INL and Wavelength Division Multiplexed Photonic Imec, Leti completed the specific process Layer on CMOS, will build a complex studies for the laser source to adapt and photonic interconnect layer incorporating modify standard III-V materials process multi-channel microsources, microdetectors steps that would comply with a CMOS and different advanced wavelength routing environment. Leti replaced gold-based metal functions directly integrated with electronic contacts with a Ti/TiN/AlCu metal stack. driver circuits. It also will demonstrate the WADIMOS partners at SPIE Photonics application of the electro-photonic ICs in an Europe 2010 in Brussels will present the on-chip optical network and a terabit optical results, April 12-16. datalink.
GaN market 'poised for growth' GaN products could soon see a growing demand for use in low-power applications. The market for gallium nitride (GaN) products could be set to take off in the months ahead due to an increasing demand for chips produced using this compound semiconductor.
With applications in mobile handsets, wireless communications, servers and notebooks, GaN-based chips are likely to see a significant boost in demand due to the low-power benefits they offer, Chip Design Mag reported in a recent blog by Ann Mutschler.
"The benefits of GaN in low power are density, efficiency and cost. Ultimately, it gives you a better trade-off for all three of Elsewhere, International Rectifier announced those compared to silicon and the key is to it has opened a new manufacturing facility in make it below a certain cost threshold," San Jose where it will be focusing on the commented Tim McDonald, vice-president production of GaN and silicon materials for of the emerging technologies group at use in space, aerospace, military and heavy- International Rectifier. duty industrial applications.
12 www.compoundsemiconductor.net April/May 2010 Historic Final 26/4/10 16:09 Page 13
InP optoelectronics technology
Optical switching: faster, smaller, and more frugal
Optical switches need to consume less power, cut their footprint and speed up if they are to stand a good chance of serving tomorrow’s optical networks and PC infrastructure. One way to realize all this and more is to turn to switches that employ microdisk or photonic crystal lasers, according to a European Research team.
etwork traffic is rising, driven in the main by a Photonic packet switching could also aid other rise in internet traffic. This had led to an applications, particularly computing. Optical technology Nincrease in the transmission of data-packets, which is already being deployed in ever-shorter links, and in contain a header section with address information, plus a the future there is a high likelihood that this will be payload detailing information content. used to boost the bandwidth and power efficiency in computers. The next step after this will be progression To cope with increases in data transfer, system from simply the transportation of data in the optical manufacturers are developing electronic packet switches. domain to its manipulation too. This will deliver a But these packet switches are a short-term fix: they are massive pay-off, because it will eliminate the need for power hungry and they are not suited to scaling to higher conversion between the electrical and optical domains. bit rates. Turning to photonic packet switching could Thanks to the promise of optical switching in various address these issues, and it has another benefit too – it applications, several research groups have been is the only technology that can realize packet switching at looking seriously at this technology for about a ultrahigh bit rates. decade. During this time researchers have realized
April/May 2010 www.compoundsemiconductor.net 13 Historic Final 26/4/10 10:57 Page 14
technology InP optoelectronics
one of the major weaknesses of all-optical packet top it all, it is extremely difficult and unpractical to switching is the omission of large optical random access integrate several switches, delay line buffers, wavelength memories, which are needed for buffering. Efforts have converters and gates together into practically useable tended to focus on realizing buffering through various photonic integrated circuits (PICs) for optical packet delay lines, such as slow-light waveguides, and re- switching. However, despite these challenges, progress is circulating fiber loops. However, buffering times have to being made, thanks in part to recent developments in be relatively short if the signal is not to be degraded by heterogeneous integration of InP-based devices onto attenuation or distortion. There are also concerns relating silicon-on-insulator (SOI ) passive circuits, and small, low- to the footprint and power consumption of delay-line- power lasers that can be achieved using this approach. based buffers. This has led to the need to compromise between the different figures of merit. To make matters Our European team is capitalizing on this success and worse, other devices for optical switching and routing, developing low-power, small-footprint PICs for all-optical such as wavelength converters, are usually based on one packet switching through a project called HISTORIC – or more semiconductor optical amplifiers with a large heterogeneous InP-on-silicon technology for optical power consumption and a substantial footprint. And to routing and logic. This program, which kicked off in July
Tunnel Quantum junction well Top metal
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SiO2 Lateral contact SOI wg.
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Grating coupler Microdisk laser
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Figure 1. Microdisk lasers could provide a key building block for next-generation optical switches that set a new benchmark for speed, low-power consumption, and a small footprint. These tiny lasers are united with silicon-on- insulator waveguides, with coupling provided by a grating coupler (a). A scanning electron microscopy image reveals the various layers in the structure (b). Light-voltage curves show the two competing modes produced by the microdisk laser, which has a 7.5 μm diameter (c). Lasing spectrum for the CW mode at a bias of 3.8 mA (d) . All powers are calculated inside the SOI waveguide by taking into account the coupling efficiency of the grating coupler. (From: L. Liu, et al,, ‘An ultra-small, low power all-optical flip-flop memory on a silicon chip’, Nature Photonics, ISSN , 1749-4885, 4 182-187, March 2010)
14 www.compoundsemiconductor.net April/May 2010 Historic Final 26/4/10 10:57 Page 15
InP optoelectronics technology
2008 and has 2.3 million Euros of funding from the Figure 2. The European Union, is a two-pronged effort: PICs comprising microdisk laser microdisk lasers and resonators; and photonic-crystal- wavelength based lasers heterogeneously integrated onto SOI wafers converter has and interconnected by silicon wire waveguides. a higher bit-error-rate Four partners are involved in the project: imec-Ghent at 20 Gbit/s University, Belgium, which is acting as the coordinator; CNRS-LPN (Laboratory of Photonics and Nanostructures), France; the Technical University Eindhoven (TUe), the Netherlands; and IBM Zurich Research Labs, Switzerland. All partners are collaborating on the design of the PICs.
The fabrication and technological development of the microdisk-based PICs is taking place in the clean rooms of imec-Ghent University, while the facilities at CNRS- LPN and TUe are being used to create photonic crystal- Major strides in this direction were made in the first year based PICs. The PICs are to be used by IBM and the of the project. This included the fabrication of 7.5 μm systems group at TUe to perform the systems experiments diameter, microdisk-lasers that form all-optical flip-flops, and evaluate the quality of various architectures. which were coupled to silicon wire waveguides (Fig. 1). This is the first electrically pumped, all-optical flip-flop on For the individual building blocks, such as the all-optical silicon fabricated using CMOS technology (a detailed flip-flops and gates, a footprint of less than 200 μm2 is report is provided in our Nature Photonics paper targeted. Scaling to these device dimensions should lead published earlier this year). Switching occurs between to record low switching times of tens of picoseconds and predominant clockwise and anticlockwise lasers modes, switching energies below 10 fJ. and can be realized with switching times and energies of Together with the small footprint and low propagation loss just 60 ps and 1.8 fJ. in the silicon wire waveguides, this promises to create optical packet switches with competitive speeds and very The threshold current of our microdisk lasers is only 0.33 low power consumption. mA. Between threshold and 1.7mA these lasers have two Tiny lasers competing modes, but at a higher drive current they are
April/May 2010 www.compoundsemiconductor.net 15 Project4 26/4/10 10:35 Page 16
Ideas that shine out in HB LED production
Patterning of Sapphire by ICP
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InP optoelectronics technology
first InP-membrane photonic crystal laser heterogeneously integrated onto SOI. This novel device holds the key to a step-change in the performance of an all-optical flip-flop. Microdisk-laser-based, all-optical flip-flops promise to deliver power consumption below 1 mW, combined with switching energies of a few fJ and a footprint of just a few hundred microns squared. But equivalents based on photonic crystal lasers should realize power consumptions that are an order of magnitude lower, alongside a footprint of just a few tens of microns squared.
Efforts directed at fabricating photonic crystal lasers heterogeneously integrated onto SOI are being led by CNRS-LPN and TUe. LPN has so far concentrated on the coupling of photonic crystal lasers to photonic circuits implemented in SOI. Coupling is tough, due to the very small mode size of the photonic crystal lasers, but the first InP-based photonic crystal lasers heterogeneously Figure 3. bi-stable (see Fig. 1). A further reduction of the threshold integrated onto silicon-on-insulator have been Scanning current and the operating current (at which bi-stability is demonstrated (see fig. 3). electron obtained) should be possible by shrinking disk microscopy dimensions, increasing the current injection efficiency, and Pumping the lasers with short pulses from a titanium- images show cutting the various reflections that lead to coupling sapphire source produces lasing. Emission from the the alignment between clockwise and counter clockwise modes. photonic crystal lasers was coupled evanescently into of the InP The same disk lasers that are used as all-optical flip-flop single-mode silicon waveguides (see fig. 4). Coupling to photonic crystal memories have also been demonstrated as all-optical single mode fiber was, just as for the microdisk lasers, to the silicon gates and all-optical wavelength converters, which realized with surface grating couplers. waveguide currently operate at up to 20 Gbit/s. The small footprint and lower power consumption associated with microdisk The TUe is focusing on electrical pumping of InP- lasers enables a new level of performance, in terms of membranes with a thickness of less than 200 nm. The Gbit/s/mW μm2. The bit error rate for this technology is key to this approach is micro-scale integration of active suitable for the target applications (see Fig. 2). At a 10 and passive components with a transparent, high- Figure 4. Gbit/s speed the converter operates error free, and at resistance layer. This layer is in the center of the The photonic 20Gbit/s the bit error rate is below 10-3, which is membrane, outside the active region, and it acts as a crystal laser considered sufficient for systems employing forward error current-blocking layer between the n and p-type contact can realize correction. All these results were presented in more detail layers. By employing a current-blocking layer everywhere lasing via at the 2010 Optical Fiber Communications Conference. except in the active region, it is possible to create an optical pumping A further success of HISTORIC is the fabrication of the “electrical pin-hole” for funneling all the current flow through the region. This design enables the electrodes to be placed far enough from the laser cavity, with an efficient current injection in the active region.
Future goals for the HISTORIC project include: the fabrication and testing of PICs implementing combinatorial logic such as NAND, XOR, and other gates; and sequential logic such as D-latches or optical shift registers. IBM, TUe and IMEC have already conceived several inventive designs for all-optical logic circuits, making use of interconnect microdisk lasers and gates. These components should be ready within a matter of weeks, and will be tested extensively in the following months. If progress goes according to plan, this will pave the way for the realization of large-scale, low-power, small footprint PICs for all–optical packet switching and routing.
This article was written by the HISTORIC project team.
April/May 2010 www.compoundsemiconductor.net 17 NASA vFinal DR 26/4/10 10:59 Page 18
technology SiGe
SiGe finds a fantastic home on sapphire
Sapphire can form the bedrock for the growth of relatively thick, single crystal epitaxial films of rhombohedral SiGe. This material has much higher carrier mobility than single crystal silicon, and could spur the development of ultra-fast chipsets, say Yeonjoo Park and Sang Choi from NASA Langley Research Center.
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SiGe technology
and-gap engineering is one of the most Bimportant guidelines to design new semiconductor alloys and devices. For the last 60 years, two important semiconductor alloy engineering models were developed for band-gap engineering; the cubic crystal structure model shown in Figure 1-(a) and hexagonal crystal structure model shown in Figure 1-(b). The first cubic crystal model includes group IV semiconductors (Si,Ge,C) of diamond structure, and group III-V (GaAs, InP, etc.) and group II-VI (ZnSe, CdTe, etc.) semiconductors of cubic zinc-blende structure. The second hexagonal crystal model includes III-Nitride semiconductors (GaN, AlN, InGaN, etc.) and hexagonal SiC semiconductors. Figure 1. Crystal structure of (a) cubic zinc-blende or diamond structure, (b) hexagonal Wurtzite structure, (c) crystal symmetry group relation, (d) Our team at NASA Langley Research Center proposed Rhombohedrally aligned SiGe on c-plane Sapphire, (e) two possible and proved that a third alloy engineering model - alignments of SiGe on trigonal c-plane Sapphire, twin to each other “rhombohedral-trigonal crystal model” - can be established between the cubic one and hexagonal one. A simple diagram of rhombohedral-trigonal crystal model is shown in Figure 1-(c). In details of the new model, a general cubic crystal is not only a special case of tetragonal crystal but also a special case of a rhombohedral crystal with inter-planar angle of 90°. When a cubic crystal is strained in the [111] direction, it becomes a rhombohedron. Thus, a cubic crystal belongs to a rhombohedral crystal group.
Additional mathematical transformation equation transforms any rhombohedral crystal into a trigonal crystal in hexagonal frame. Therefore, cubic crystals belong to a more general trigonal crystal group and the epitaxy between cubic crystals and trigonal crystals can be established not as an accidental coincidence-lattice- matching but as a fundamental crystal symmetry relation. Figure 1-(d) shows such an example of rhombohedrally aligned cubic SiGe on trigonal c-plane sapphire. The problem of this epitaxy is that two crystal structures which are twin to each other can be formed as shown in Figure 1-(e), the top view. This twin defect was a major problem Figure 2. Innovative patented XRD methods characterize integral density in the rhombohedral epitaxy and has hindered further and spatial distribution of twin defects applications so far.
However, we found that optimized growth under new X- patents pending 2, 4, and 5). Figure 2 shows the ray diffraction (XRD) characterization can eliminate twin characterization results by XRD. Innovative XRD wafer defect and form single crystalline rhombohedral SiGe mapping method shows spatial distribution of major single layer on c-plane sapphire in one of the crystal alignment crystalline SiGe (99.8%) (Left image) and twin defect of Figure 1-(e). This is because threefold symmetry of a SiGe (0.1%) (Right image) that exist on the same trigonal crystal prefers one rhombohedrally aligned cubic sapphire wafer clipped by three plastic jaws outside. Twin crystal to the other. Thus, a symmetry breaking occurs crystal defect is reduced to below 0.1% and it exists only between two cubic crystals that are rotated by 60° from at the edge of a wafer. The successful development of each other, i.e. one cubic crystal becomes dominant and rhombohedrally aligned SiGe has also led the inventors to the other cubic crystal diminishes. construct a new hybrid bandgap engineering diagram with transformed lattice constants. In conventional cubic The discovery of super-hetero-epitaxy growth technology bandgap engineering diagram, the distance of [100] for rhombohedral single crystalline SiGe on c-plane vector, i.e. lattice constant of a cube is used as sapphire was confirmed by the NASA-invented new XRD coincidence lattice distance. On the other hand, methods: (1) Total defect density measurement and (2) conventional hexagonal bandgap engineering diagram Spatial wafer mapping method (see further reading, uses the distance of basal plane basis vector as
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technology SiGe
coincidence lattice distance. Direct comparison of the two lattice constants, one from the cubic crystal and the other from the hexagonal crystal is not very meaningful because it is an apples-to-oranges comparison although they are often plotted in one diagram. To the contrary, in rhombohedral super-hetero-epitaxy, three <2-20> vectors of cubic crystal that are perpendicular to [111] vector is making coincidence lattice matching with the combination of basal basis vectors of the trigonal crystal. Also, by adding another fact that hexagonal crystals can be epitaxially grown on trigonal crystals such as GaN on Sapphire with in-plane rotation, a combined ab-initio hybrid bandgap engineering diagram was developed and under test now.
Hundreds of new alloys and thousands of new device structures can be fabricated with rhombohedral-trigonal model because this epitaxial scheme is not only limited to SiGe on sapphire but can be extended to other cubic Figure 3. Applications of rhombohedral semiconductors on trigonal crystals semiconductors on thousands of trigonal crystals in nature. It is expected that not all trigonal crystals can accommodate rhombohedrally aligned cubic crystals, but selected trigonal crystals that have enough difference of formation energies between two cubic crystals rotated by 60° can yield a single crystal epitaxial layer.
To identify other new materials within the rhombohedral super-hetero-epitaxy category, NASA scientists have selected a few candidate materials and they are developing the growth methods. Another benefit of rhombohedral super-hetero-epitaxy in addition to new hybrid crystal structure is that it has unprecedented lattice matching conditions that are different from cubic lattice matching. These new opportunities to create lattice matched and strained semiconductors are under study now. It is also interesting that a cubic semiconductor on trigonal substrate is strained from <1-10> directions and elongated or compressed along [111] direction so that it deforms into a rhombohedron shape while conventional Figure 4. Inter-crystal-structure epitaxy possibility relations with cubic epitaxy creates tetragonal deformation by strains in applicability of twin detection XRD methods <100> direction.
Many trigonal crystals are insulators like sapphire. NASA’s rhombohedrally single crystal SiGe is the first of Therefore, it is also possible to create SiGe on Insulator its kind ever achieved in the world. Therefore, there is no (SGOI) with a possible lattice matching condition. Tables competition. The highly anticipated increase in charge 1 and 2 show how the key features of currently mobility of the proposed materials technology is unique developing lattice matched SiGe on Insulator (LM-SGOI) for the development of ultra fast chipsets. The lattice- under our research compare to existing products or matched SiGe is also complemented by silicon oxide as technologies: The far right column of table 1 shows the an insulator, unlike the arsenide, antimonide, or other NASA Langley developed SiGe material that is compound semiconductors. compatible with the conventional insulator silicon oxide. The compatibility of SiGe with the silicon oxide is a very A proper insulation material like SiO2 for lattice-matched important factor for wafer-based mass production. SiGe allows fabrication of several hundreds of chips on a Table 2 shows the attainable speed of SiGe chipsets wafer basis. Compound semiconductors, such as zinc- based on the gate length and the charge mobility. blendes and Wurtzites, do not have proper insulators to Lattice-matched SiGe widely opens a possibility of allow mass production, instead of a single chip. chipset speed improvement, while the single crystal silicon itself has its own intrinsic limit on speed even by Another challenge is to incorporate higher germanium miniaturized feature size. From this table, one can easily content into SiGe layer to raise carrier mobility. For imagine the great impact of NASA Langley’s example, the electron mobility of germanium is 4,000 rhombohedral lattice-matched silicon-germanium material cm2/V·s while that of silicon is only 1,400 cm2/V·s. By on the new generation ultrafast chipset development. providing a suitable substrate for SiGe layer, transistors of
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SiGe technology
higher operation frequencies can be fabricated as shown in Table 2. Ultra-CMOS Rhombohedral semiconductors on trigonal substrates can improve the following products: Ultra fast Complementary Metal Oxide Semiconductor (CMOS) chipsets; Hetero- junction Bipolar Transistors (HBT); Thermo-Electric (TE) device; photo-voltaic solar cell device; advanced detectors; high frequency high power transmitters; and others as shown in Figure 3.
Before our research, trigonal crystal materials were not considered to be compatible with cubic semiconductors. The hybrid structure of rhombohedrally deformed cubic semiconductors and trigonal crystals create new opportunities to fabricate completely new single-crystal Table 1. Comparison of Si, SOI, SiGe on Si, and LM-SGOI technologies alloy structures for ultrafast semiconductor chip development beyond the silicon-based chip technology.
Since the NASA’s rhombohedral SiGe can allow faster electron motion with higher germanium contents than single crystal silicon has, it will offer the development of ultrafast chipsets for numerous applications. In addition, hexagonal space symmetry materials can be grown on trigonal space symmetry materials such as GaN on c- plane sapphire.
We summarize the following inter-crystal-structure epitaxial relation between cubic [111] direction, trigonal [0001] direction, and hexagonal [0001] direction for further possibilities as shown in Figure 4. This diagram shows the possibility of epitaxial growth from underlying Table 2. Expected operation speed of a transistor with various mobilities substrate material of one space symmetry group to an and gate lengths epitaxial layer of a different space symmetry group. A solid line means that it is possible to form a single crystal layer, and a dashed line means that double This research has won a R&D100 award in 2009 and it has double-edge position defect creates huge difficulties to form a single impact as the world’s first development of single crystalline rhombohedral crystal. A round green circle indicates that twin detection SiGe semiconductors on trigonal substrates and opening the first window to XRD methods can be applied and an empty circle means hybrid crystal structure alloy engineering, namely, “Rhombohedral Hybrid that twin detection XRD methods do not work. Band-gap Engineering” with innovative XRD methods.
Further reading
Yeonjoon Park, Sang H. Choi, Glen C. King, and James R. Elliott “Hybrid Bandgap Yeonjoon Park, Sang H. Choi, Glen C. King, and James R. Elliott Engineering for Rhombohedral Super-Hetero-Epitaxy”, NASA Case No. LAR 17405-1, “Supporting XRD DATA for rhombohedrally-grown diamond-structured group-IV alloys June 28, 2006. [patent filed on April 23, 2007] on basal plane of trigonal substrate”, NASA Case No. LAR 17392-1, June 28, 2006. Yeonjoon Park, Sang H. Choi, Glen C. King, and James R. Elliott, “Supporting DATA (XRD [patent filed on September 5, 2008] and EBSD) for Hybrid Bandgap Engineering for Rhombohedral Super-Hetero-Epitaxy”, Yeonjoon Park, Sang H. Choi, and Glen C. King, “Lattice Matched SiGe Layer on NASA Case No. LAR 17519-1, March 12, 2007. [patent filed on August 25, 2008] Single Crystalline Sapphire Substrate”, Invention Disclosure, NASA Case No. LAR Yeonjoon Park, Sang H. Choi, Glen C. King, and James R. Elliott, “New 16868-1, February 26, 2004. [patent filed on April 23, 2007] Rhombohedral Alignment of Cubic Semiconductor On Trigonal Substrate At A High Yeonjoon Park, Sang H. Choi, and Glen C. King, “Silicon Germanium Semiconductive Temperature”, NASA Case No. Alloy And Method Of Fabricating Same”, U.S. Patent No. 7,341,883, March 11, 2008 LAR-17553-1, July 10, 2007. [patent filed on September 5, 2008] Yeonjoon Park, Sang H. Choi, Glen C. King, James Elliott, Diane M. Stoakley, “Graded Yeonjoon Park, Sang H. Choi, and Glen C. King, “Epitaxial Growth of Group IV Indexed SiGe Layers on Lattice Matched SiGe Layers on Sapphire”, U.S. Patent No. Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal”, Invention 7,514,726 B2, April 7, 2009 Disclosure, NASA Case No. LAR 17185-1, June 13, 2005. [patent filed on Yeonjoon Park, Glen C. King, and Sang H. Choi, “Highly [111]-oriented SiGe layer on c- July 13, 2006] plane sapphire”, Journal of Crystal Growth, Vol. 310, Issue 11, p2724~2731, May 15, 2008.
April/May 2010 www.compoundsemiconductor.net 21 Pranalytica vFINAL 26/4/10 11:01 Page 22
technology lasers
QCLs take the leap from toys to tools
A revolutionary active region is the driver behind the record single-facet output powers emanating from Pranalytica’s quantum cascade lasers (QCLs). This advance will spur the launch of compact, lightweight, multi-watt, mid-wave infrared lasers, say the company’s Richard Maulini, Arkadiy Lyakh, Alexei Tsekoun and Kumar Patel.
CLs are a novel class of laser that can plug Fig.1. A typical Qcritical gaps in the mid-wave and long- QCL design wave infrared spectral regions that are currently served by employs a two- very few continuous wave (CW), room temperature solid- phonon active state sources. QCLs can operate in this spectral range region. because their emission is not based on conduction band Longitudinal to valence bands transitions that govern the emission of optical phonons conventional laser diodes. Instead, they generate laser are needed for emission from transitions between confined intersubband transitions states formed within a superlattice of alternating layers of between levels materials with lower and higher bandgaps, known as 3 and 2, and 2 quantum wells and barriers. The emission wavelength is and 1 (left). then dictated by properties of the superlattice, such as Pranalytica the thickness of the wells and barriers, and this opens up uses an a range of wavelengths that can be reached through alternative bandgap engineering. approach with a non-resonant The fundamental idea behind the QCLs is not new and which has a wall-plug efficiency of 13%, was the result of extraction dates back to the early 1970s. However, practical multiple advances that span the entire QCL production active region realization of this device took nearly 25 years, due to the chain, from fundamental design of the active region that vastly extreme demand that the laser structure puts on epitaxial through to thermal management of the chip. increases the quality. Even after the first working QCL was produced, freedom of this class of laser remained little more than a laboratory Beckoning applications QCL design curiosity for a decade. Initial performance was poor, and Thanks to these improvements, our QCLs are now (right) the first generation of QCLs were available only in the attractive candidates for real world applications. In the form of individual chips, or chips on carrier assemblies. defense market space, they are being explored for Consequently, integrating this class of laser into a system protection of military and civilian aircraft, and high-power required expertise in QCL handling, powering and handheld devices are being tested as target illuminators. packaging. In addition, early designs had to be cooled to In addition, several non-defense QCL applications are cryogenic temperatures - CW, room-temperature imminent, including free-space optical communications, performance was only realized in 2002. ultra-sensitive trace-gas sensing based on photo-acoustic spectroscopy and other detection techniques and remote At Pranalytica, our mission has been to improve the sensing. performance of QCLs and their packaging, so that they can make the transition from laboratory devices to There is no denying that it has taken the QCL community commercial lasers that can serve a host of applications. a long time to get to the stage where its lasers are Thanks in part to funding from the US Defense Advanced commercially viable. That’s partly because this class of Research Projects Agency, we have made significant laser has a relatively complex design, consisting of strides in this direction, including a recent room- hundreds of superlattice layers, each with a thickness of temperature demonstration of 3W, CW output from one just a few nanometers. Imperfections in the hetero- single facet of a 4.6 μm laser. This record-breaking laser, interfaces can cause undesirable carrier scattering, and in
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lasers technology
Fig. 2. 6 μm and beyond. Shorter wavelengths can be reached Pranalytica’s by increasing the depth of the quantum wells. A higher 4.6 μm QCLs conduction band offset is then needed, which can be feature a non- realized through increasing the indium concentration in resonant InGaAs, along with the aluminum concentration in InAlAs. extraction However, compositional adjustments pay the penalty of active region adding strain into the superlattice, because these ternary and can deliver compositions are no longer lattice-matched to InP a record- substrates. Strain can be partially ameliorated through breaking CW careful selection of alternating compressively strained and output of 3W at tensile strained layers of appropriate thickness. By 293 K optimizing this approach, we have made record-breaking 4.6 μm lasers that contain about 1 percent strain.
The leading materials candidates for wavelengths shorter than about 3.8 μm are III-V antimonides, which have larger conduction band offsets. Present efforts have focussed on either the InGaAs/AlAsSb or InAs/AlSb systems. QCLs built from these pairings of materials hold significant promise for short wavelength emission, but the worst case, distortion of the shape of a given quantum room-temperature, CW performance is yet to be realized. level, driving the design away from the optimum. Superior active regions In addition, QCL performance can be compromised by QCLs are unipolar devices, with emission governed by small deviations in growth uniformity, both across the intersubband transitions that do not depend on the wafer and in the timings of the growth process. Since intrinsic properties of the material, but rather on the carriers traverse the superlattice structure sequentially, thickness and depth of the quantum wells and barriers any thickness deviations within the structure will degrade that make up the gain medium. The challenge for device performance. So it is no surprise that advances in designers of QCLs is to simultaneously optimize all the MBE held the key to practical realization of the first quantum cascade structure parameters influencing laser QCLs. performance.
Most QCLs are made from a combination of InGaAs wells Most of today’s QCLs are designed using the two-phonon and InAlAs barriers, grown on an InP substrate. This resonance approach (see Fig.1). The lower laser level 3 is material system is popular because it is well understood, depopulated by two consecutive non-radiative transitions thanks to its use in numerous telecom lasers. But that’s to the levels 2 and 1, which are each spaced by roughly not the only reason for selecting this particular material the longitudinal optical (LO) phonon energy ELO in the system – the pairing of In0.52Al0.48As and material (In the case of InGaAs, ELO is about 35 meV). In0.53Ga0.47As is lattice-matched to InP, simplifying the With this design, the lower laser level is rapidly epitaxial growth of very thick QCL structures. This depopulated, thanks to fast resonant, phonon-assisted combination produces a conduction band offset in excess scattering. But this advantage has to be weighed against of 0.5 eV, so it is possible to construct QCLs emitting at the shackles of the two-phonon QCL design. Once the two phonon resonance condition is met, there are not Fig.3: A robust sufficient degrees of freedom remaining in the design to facet coating optimize its other aspects. For example, with this design has aided it is difficult to increase the energy spacing E54 between development of the upper laser level 4 and the active region level 5, which reliable, high- ultimately suppresses parasitic carrier injection into the power mid- latter state. infrared QCLs. This includes We have regained design flexibility for the QCL by 2.5W QCLs removing the two-phonon resonance condition and turning that show no to a non-resonant extraction approach. Our design signs of replaces a single, resonant final state with several closely degradation spaced final states separated from the state above by during a 100- substantially more than ELO. Even though the transition hour pre- to each of the new final states is slower than that in the delivery test resonant case, carrier lifetime in the state above is
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technology lasers
QCLs run in CW mode generate a substantial amount of heat – typically 10 MW/cm3 – and we have addressed these thermal issues with a buried-heterostructure geometry. The epitaxial laser structure is etched to form near-vertical ridges defining the side-walls of the laser cavity, and valleys are overgrown with a material providing superior thermal conductivity to that of the active region superlattice. This additional material, MOCVD-deposited iron-doped InP in the case of InGaAs/InAlAs QCLs, is transparent to the lasing wavelength and electrically insulating. At the package level, we have pioneered the use of epi-side mounting of QCLs for efficient thermal management. Thanks to optimized thermal management, we have realized a ratio of pulsed-to-CW output power of just 1.5 for a 3W QCL attached to a diamond submount. This type of submount is widely used to report results, because it is very efficient at extracting heat from QCLs, but its thermal expansion mismatch to the thermal expansion of the QCL material impairs long-term reliability. In the case of diamond substrates, to prevent damage to the laser, QCLs are soldered to the submounts with soft QCLs can be reduced thanks to the introduction of several parallel indium solder, but this leads to solder electro-migration at mounted in extraction paths. high temperatures and/or high currents densities. butterfly packages MBE or MOCVD? We circumvent all these issues by: utilizing AlN containing The first QCLs were produced by MBE, a technique that submounts with a thermal coefficient similar to that of the thermoelectric is adept at producing precise growth of thin layers with laser; bonding the submount to the QCL with hard AuSn coolers and abrupt heterointerfaces. This form of epitaxy dominated solder; and optimizing device geometry and facet coatings collimation the growth of QCLs for a decade, but notable for room-temperature, CW operation. This has enabled a optics improvements to MOCVD technology during the 1990s maximum CW output of 2.9W at 293K. We have also have enabled process engineers to now have a choice of studied the performance of our QCLs without deposition techniques. MOCVD’s potential advantages thermoelectric cooling (often called “uncooled” operation) include a faster growth rate - a particular cost advantage and found that they produce a maximum average power of for the very thick QCL structures - and nominally lower 1.2W, and a CW power in excess of 1W. Recently, thanks reactor maintenance. to further improvements in thermal management, we have raised the bar for average power output for “uncooled” The first MOCVD-grown QCL was demonstrated in 2005 operation to 2.0W. by researchers at the University of Sheffield, UK, and since then this approach has been gaining traction. As of It is worth noting that our output power and wallplug today there is no consensus in the QCL field regarding efficiency figures are given for single-ended emission. As fundamental superiority of MBE or MOCVD, and we keep with all edge-emitting semiconductor lasers, as-cleaved an open mind, producing lasers with both techniques. QCLs emit light equally from both facets, and many researchers report the combined output from both facets We have produced a portfolio of high-quality, QCL epi- as the output power. But the vast majority of applications structures for emission in the medium-wave infrared by demand single-ended output, a requirement that is fulfilled optimizing our growth process for strained structures by depositing a high reflectivity coating on one of the containing hundreds of nanometer-thick layers. QCL facets. This is a daunting task for high-power QCLs – quality is normally assessed through measurements of the optical power density on the facet of a 2W laser can spontaneous emission spectrum’s full-width at half- exceed 10 MW/cm2. However, we have risen to the maximum: our 4.6 μm structures have a value of just 26 challenge of producing a reliability coating operating in meV at room temperature, 20 percent less than that of the mid-infrared and developed QCLs emitting 1W or previous growths of the same design. more that can deliver many thousands of hours of degradation-free operation (see Fig.3). To simplify systems integration of our QCLs, we have developed advanced, high-reliability, self-contained To facilitate the integration of our QCL chips into various packages that employ well-proven telecom practices. applications and ensure long-term reliability, these devices These require only electrical power and heat sinking to are installed into custom-designed butterfly type packages operate. containing a thermoelectric cooler and collimation optics.
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lasers technology
Output powers in excess of 1W can be produced from an uncooled package (left). A table-top variant has also been produced (above). This version can also drive the laser with pulses exhibiting rise and fall times of less than 5 ns
This complete system, which is hermetically sealed in Any systems integrator requires infrastructure in addition to Further nitrogen atmosphere, is very compact – its mass is less the laser package, including drive electronics and package reading than 100 g and it has a volume below 50 cm3. An thermal management. These tasks for room-temperature, CW additional appeal of these hermetic packages is that by QCLs are challenging, because this class of laser requires Jérôme Faist et providing a well-defined electrical and optical system significantly higher drive voltages (12-16V) than its diode al., Science 264, interface, they free system designers from needing to cousin, as well as a more capable form of external thermal 553–556 become QCL experts, thereby dramatically reducing the management. To reduce the barrier to entry for QCL system (1994). risk and time for developing QCL applications. integration, we have developed appropriate drivers, heatsinks Mattias Beck et and controllers that represent the entirety of equipment al., Science 295, Some applications require higher powers, and to meet necessary for operating a QCL in a customer’s system. Such 301–305 these needs we have developed specially packaged, systems, which are now commercially available in several (2002). cryogenic QCLs that deliver a CW output in excess of different versions with a CW output power in excess of 2.5W, Jérôme Faist et 7W at 80K. However, the increase in the output power of should help to unlock the door to deployment of lasers for al. IEEE J. this chip has the downside of a more expensive, larger protection of military and civilian aircraft, gas sensing, and a Quant. Electron. and heavier system. host of other important applications. 38, 533 (2002). Arkadiy Lyakh et al. , Appl. Phys. Lett. 95, 141113, (2009). Richard Maulini et al., Appl. Phys. Lett. 95, 151112, (2009). Robert Curl et al., Chem Phys. Lett. 487, 1-18 (2010).
Pranalytica manufactures commercial, turn-key, high-power QCL systems that operate off standard AC power and can deliver CW output powers in excess of 2.5W (above). The laser head houses the QCL and its thermal management system, and a controller provides all of the necessary supply, command, control and safety functionality. This version can deliver more than 2W of collimated radiation at 4.6 μm. For applications requiring projection of the QCL beam over several kilometers, the laser head can be coupled to an external objective (right)
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technology LEDs
LED-backlit displays and street lighting fuel Taiwan’s LED growth
Tawian’s LED industry has weathered the global economic storm, and it is now recovering fast thanks to increased deployment of this chip in street lighting and display backlights. The Photonic Industry and Technology Development Association (PIDA) details the transformation.
he financial crisis brought a global downturn at the LED illumination has increased from 5 percent in 2008 to Tvery beginning of 2009 that led to a slowdown of 7 percent in 2009. PIDA’s analysts forecast continued market development and a decline in revenue generated growth for the next few years generated by the by Taiwan’s LED industry. However, strong demand from deployment of LEDs in signs/ displays and illumination. LED TVs is reviving the industry beyond expectation. It is thought that revenue from Taiwan’s LED industry hit NTD In 2009, LED streetlights and LED-backlit TVs (or LED 80 billion ($ 2.5 billion) in 2009, which is 3 percent TVs, the term coined by Samsung) were the applications higher than it was for the previous year. And PIDA that attracted the most interest in Taiwan’s LED industry. analysts predict that the LED industry will do even better Regarding LED streetlights, the government collaborated in 2010, with the year-on-year revenue growth of 13 with several industry players to set up three demonstration percent. areas in Taipei city. Later, in June 2009, the Cross-straits Taiwan’s LED LED Forum provided a prime opportunity for a Taiwanese revenue was The leading application for Taiwan’s LED products is LED player to install a demonstration involving about 1.4 flat towards the mobile phones, with a 37 percent share of total revenue, million street lamps in 21 major cities in China. Taiwan- end of the followed by electronic devices, accounting for 32 percent. based chipmakers are believed to benefit from China’s noughties, but The market share taken by these two applications slightly insufficient domestic production of LED chips. it will pick up shrank in 2009, due to rising revenues in signs/displays over the next and illumination. The former accounts for more than 20 LED TVs have taken off beyond industry players’ few years. percent of LED sales, and has delivered 5 percent expectation, and sold half a million units within a hundred Credit: PIDA revenue growth compared with 2008, while the share of days, triggering a battle to launch LED TV among brand name companies including Sony, LG, Sharp, and Toshiba, who are all vying for market share. This has increased demand for LEDs, benefiting Taiwan’s chipmakers and packagers. For example, sales at Taiwan’s largest LED chipmaker, Epistar, have been growing since summer 2009, and in January 2010 they hit NTD 1.3 billion, more than double that for January of the previous year. Another leading LED player, Formosa Epitaxy, has also seen its revenue increase recently. In February 2010 sales hit NTD 203 million. The company has installed 43 MOCVD reactors since the fourth quarter of 2009, and it will add another 55 this year that will give the firm a year-on-year increase in capacity of 40 percent. Government-backed growth In order to reflect the industry’s need to commercialize the LED, as well as to put into effect the Energy-Saving and
26 www.compoundsemiconductor.net April/May 2010 Taiwan LED vFINAL 26/4/10 11:24 Page 27
LEDs technology
Market analyst Strategies Unlimited predicts that the proportion of LEDs used for displays will grow substantially from 2009 (top) to 2012 (bottom)
The proportion of Taiwan’s LED production deployed in signs and displays will rise during the first few years of this decade. Credit: PIDA
Carbon-Reduction Action Plan, Taiwan’s central and local governments collaborated with a number of industry players. This led to an announcement in December 2008 to set up three exclusive demonstration areas, making it abundantly clear that the government wants to nurture the LED industry. national standards, enactment of regulations, and The three demonstration areas are located in Taipei city innovation awards programs. and include 228 Peace Park, Fuzhou Street and Nanyiang Street and its neighborhood. In 228 Peace Park, an LED In addition, according to Taipei City Government - one of lighting landscape, plus a garden control system and the cities on the island that invests a great deal of money accessories, were adopted to showcase the impressive and effort in driving the environmental protection activities grand sight down at Kaidagelan Boulevard. Around - the exclusive demonstration can act as a catalyst that Fuzhou Street, LED outdoor street bulbs were used to spurs more effective follow-up commitments to energy- light up the roadway. In the neighborhood of Nanyiang saving. Mayor Longbing Hao acknowledged that global Street LED lighting fixture were designed to beam down warming is getting worse and will cause a great deal of on the paving. harm, but this state of affairs can be mitigated if governments throughout the world, including Taipei, According to Chii-Ming Yiin, Taiwan’s Minister of develop measures to reduce greenhouse gas emissions. Economic Affairs, with years of subsidization from the In Mayor Hao’s expectation, more than 140,000 government plus advanced technology improvement from incandescent streetlamps in Taipei city will soon be business initiatives, the long-anticipated third revolution in replaced with power-saving, LED-based bulbs. lighting has arrived. Minister Yiin also claimed that Taiwan is leading the world in terms of LED production by According to LEDinside, an independent industry volume, and it can drive the industry growth that began research institute based in Taiwan, the nation’s streetlight last year. What the government aims to contribute to this market offer a potential business opportunity valued at development is to draw up a well-arranged plan, including around NT $40-50 billion for local LED firms. The
According to Chii-Ming Yiin, Taiwan’s Minister of Economic Affairs, with years of subsidization from the government plus advanced technology improvement from business initiatives, the long-anticipated third revolution in lighting has arrived
April/May 2010 www.compoundsemiconductor.net 27 Taiwan LED vFINAL 26/4/10 11:24 Page 28
technology LEDs
the project include Lite-On Technology Corp., a well- established LED firm that will help to build a fully integrated supply chain of LEDs among Taiwanese high- tech heavyweights, along with companies such as: Alliance Optotek Corporation, a solid-state lighting solution provider for lighting industries; China Electric Mfg. Corporation, an own-branded lighting company supplying a full range of products including LED and Solar Energy lighting systems; and Lustrous Technology Ltd, a leading COB packaging technology company.
Lighting may be the future for LEDs, but today revenue is driven by chip deployment in other applications, ranging from cell phones to large-sized products such as The number of attendees at LED Lighting Taiwan has notebooks, TVs and monitors. Large-sized display risen rapidly over the last few years backlighting should become the largest LED application market in near future, according to PIDA. LED application in displays will soar from 1 percent in 2009 to 23 percent government earmarked NT $200-300 million to install in 2012, bringing a strong growth in the LED market. LED streetlights in 2009. LEDinside also predicted that Taiwanese LED firms that specialized in packaging, Thanks to the low cost associated with LED backlights in including Unity Opto Technology Co., Ltd, Bright LED small-sized displays, this technology that combines high Electronics Corp., and Foxsemicon Integrated Technology efficiencies with low weight has enjoyed substantial Inc., will benefit from the plan. success in small-sized products. The technology is now starting to be deployed in large panels (not including Given the wide range of activities needed to implement netbooks), with shipments reaching 79.8 million units. The the production of LED-based systems for new penetration rate was 18 percent in 2009, a four-fold applications, collaboration across the industry is widely growth compared with the previous year. In total, the accepted as the right way to go. Two companies penetration rate of LED back-lit notebooks leapt from 11 expected to produce LED chips for this effort are: Epistar percent in 2008 to 51 percent in 2009, becoming the Corporation, which is located in the central city of Hsin- strongest driver of growth of LED backlit modules in chu and is developing and manufacturing high brightness large-sized panels. Concerning LCD TV, the penetration LED products by applying its own proprietary MOCVD technology; and Formosa Epitaxy Incorporation, a Taoyuan-based manufacturer of InGaN LED wafers and chips that is offering InGaN blue, green, and near-UV LED products.
On the packaging side, players that join
Rising sales of LED backlights for LCD TVs are driving strong growth of Taiwan’s LED industry. Firms involved in the supply chain include: LED TV panel makers AUO, CMO, CPT; LED TV brand names Amstran, BenQ, CMO; LED chip makers Epistar, Formosa Epitaxy, Tekcore, Huga, Optotech, Lextar, Chi Mei Lighting; LED packagers Unity Opto, Everlight, Harvatek, LiteOn, LHTC, Wellypower; and LED lead frame producer I-Chiun Credit: Samsung
28 www.compoundsemiconductor.net April/May 2010 Project3 22/2/10 16:01 Page 17
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CSapril_p29_ad.indd 1 26/4/10 11:38:40 Meeting Chairs fall meeting Kristi Anseth Boston, MA, November 30-December 4 t www.mrs.org/fall2009 University of Colorado Tel 303-735-5336 [email protected] INFORMATION PROCESSING AND SENSING ENERGY AND THE ENVIRONMENT II: Mechanochemistry in Materials Science Li-Chyong Chen A: High-k Dielectrics on Semiconductors Q: Photovoltaic Materials and Manufacturing JJ: Multiscale Dynamics in Confining Systems National Taiwan University with High Carrier Mobility Issues II KK: Nanoscale Pattern Formation Tel 886-2-33665249 B: Reliability and Materials Issues of R: Advanced Nanostructured Solar Cells LL: Multiphysics Modeling in Materials Design [email protected] Semiconductor Optical and Electrical S: Organic Materials and Devices for MM: Ultrafast Processes in Materials Science Devices Sustainable Energy Systems NN: Advanced Microscopy and Spectroscopy Peter Gumbsch C: Large-Area Processing and Patterning T: Nanomaterials for Polymer Electrolyte University of Karlsruhe (TH) Techniques for Imaging Materials with for Optical, Photovoltaic, and Electronic Membrane Fuel Cells High Spatial Resolution Tel 49-72-1608-4363 Devices II U: Materials Challenges Facing Electrical peter.gumbsch@izbs. OO: Dynamic Scanning Probes—Imaging, D: Organic Materials for Printable Thin-Film Energy Storage uni-karlsruhe.de Characterization, and Manipulation Electronic Devices V: Materials Research Needs to Advance --and-- PP: Materials Education Fraunhofer-Institut fuer E: Advanced Materials for Half-Metallic and Nuclear Energy Werkstoffmechanik IWM Organic Spintronics W: Hydrogen Storage Materials HEALTH AND BIOLOGICAL MATERIALS F: Multiferroic and Ferroelectric Materials Y: Catalytic Materials for Energy, Green Tel 49-761-5142-100 QQ: Responsive Gels and Biopolymer peter.gumbsch@iwm. G: Magnetic Shape Memory Alloys Processes, and Nanotechnology Assemblies fraunhofer.de H: ZnO and Related Materials Z: Energy Harvesting— I: III-Nitride Materials for Sensing, Energy From Fundamentals to Devices RR: Engineering Biomaterials for Regenerative Ji-Cheng Zhao Conversion, and Controlled Light-Matter AA: Renewable Biomaterials and Bioenergy— Medicine The Ohio State University Interactions Current Developments and Challenges SS: Biosurfaces and Biointerfaces Tel 614-292-9462 J: Diamond Electronics and Bioelectronics— BB: Green Chemistry in Research and TT: Nanobiotechnology and [email protected] Fundamentals to Applications III Development of Advanced Materials Nanobiophotonics— Opportunities and Challenges *** NANOSCIENCE AND TECHNOLOGY MATERIALS ACROSS THE SCALES UU: Molecular Biomimetics and Materials For additional information, K: Nanotubes and Related Nanostructures CC: Phonon Engineering for Enhanced Materials Design visit the MRS Web site at L: Large-Area Electronics from Carbon Solutions—Theory and Applications VV: Micro- and Nanoscale Processing of Nanotubes, Graphene, and Related DD: Microelectromechanical Systems— www.mrs.org/meetings/ Biomaterials Noncarbon Nanostructures Materials and Devices III or contact: M: Multifunction at the Nanoscale through EE: Metamaterials—From Modeling and WW: Polymer Nanofibers—Fundamental Studies Member Services Nanowires Fabrication to Application and Emerging Applications Materials Research Society N: Colloidal Nanoparticles for Electronic FF: Mechanical Behavior of Nanomaterials— XX: Biological Imaging and Sensing Using 506 Keystone Drive Applications—Light Emission, Detection, Experiments and Modeling Nanoparticle Assemblies Warrendale, PA 15086-7573 Photovoltaics, and Transport GG: Plasticity in Confined Volumes— YY: Compatibility of Nanomaterials Tel 724-779-3003 O: Excitons and Plasmon Resonances Modeling and Experiments Fax 724-779-8313 in Nanostructures II HH: Multiscale Polycrystal Mechanics GENERAL INTEREST [email protected] P: The Business of Nanotechnology II of Complex Microstructures X: Frontiers of Materials Research Taiwan LED vFINAL 26/4/10 11:25 Page 30
technology LEDs
JLEDS to enhance the cooperation between the local and global LED industry. PIDA also cooperates with overseas Taiwan trade offices/foreign trade offices to market the green image of LED Lighting Taiwan. In addition, the international technical and trade press will be out in force, helping to give more exposure to the show.
Apart from the exhibition itself, PIDA also presents special events such as the Opening Ceremony, Outstanding Photonics Product Award, Welcome Reception Party, Exhibitors’ Seminar, and Business Match Meeting to help promote this annual event. In 2009, LED leaders including Nichia, Cree, Dow Corning, Panasonic, Seoul Semiconductor, Optotech, Everlight, Genius Electronic Optical and LiteOn attended this photonic event and made it a success. Top tier providers will be at LED Lighting Taiwan again this year.
LED Street rate of the LED back-lit versions has grown from 0.5 LED Lighting Taiwan 2010, with the strong commitment Lights in 228 percent in 2008 to 2.5 percent in 2009, and LED-lit and support from both local and world-class LED Peace Park. monitors might be over 2 million in 2009 with the manufacturers, promises to help boost the industry’s Credit PIDA penetration rate at 1.6 percent. vitality, as well as stimulate the business. Thanks to the efforts from all participants at the show, LED Lighting Taiwan, being the most powerful LED manufacturing Taiwan 2010 will create win-win opportunities for everyone engine in the world, is well known for its integrated and and bring tremendous success to the LED industry. comprehensive LED industry supply chain. In order to reflect the trend and the bright performance of Taiwan’s LED industry, LED Lighting Taiwan 2010, scheduled to be held from June 9th to 11th 2010, will not only bring the most updated developments and features of Taiwan’s LED industry - it will also showcase the synergy between local and global LED manufacturers, and how this synergy can help to create business opportunities.
This year show organizer PIDA has launched a global marketing initiative to boost the visibility of this exposition. PIDA is going to arrange official visiting activities, such as cooperating with Science Parks, meeting with international delegates from Germany, UK and the Republic of Ireland, and organizations such OITDA and
Taiwan’s Top 10 LED Backlight Module Manufacturers Millions of LED street lights are being deployed in Taiwan. The supply chain involves: LED chips from Coretronic Coporation BridgeLux, Cree, Epistar, Formosa Epitaxy, Nichia, Radiant Opto-Electronics Corporation Osram, SemiLEDs; LED packages from Everlight, Forhouse Corporation LiteOn, AOT, Bright, Harvatek, Lustrous; LED thermal Nano Electro-Optical Technology (Nano-Op) modules from TTIC, CCI, AVC, Neng Tyi, Lustrous, Kenmos Technology NeoPac Opto, Advanced Thermal Devices, AuguX; Forward Electronics Co., Ltd LED lamp poles from Toalux, Everready Precision; and Chi Lin Technology Co., Ltd LED street lamp systems from FITI, NeoPac Opto, Global Lighting Technologies, Inc. Bright LED, TTIC, Advanced Thermal Devices, K-Bridge Electronics Co., Ltd Harvatek, LEOTEK, Delta, TGI, Unity Opto, Neo-Neon, Precisions (L) Corp Tatung, Genius, Topco, Anteya, Yeong Li, Alliance Optotek, AuguX, Everlight
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LED inspection
Optimising LED manufacturing
LED manufacturers seek new methods to reduce manufacturing costs and improve productivity in an increasingly demanding market. Tom Pierson, Ranju Arya, Columbine Robinson of KLA- Tencor Corporation discuss how epitaxy process control can result in improved MOCVD uptime and overall yield. Challenges that can be assisted with inline inspection techniques.
o meet the requirements of demanding new Inline inspection for LED process Tmarket applications such as LCD backlighting and LED performance is defined by optical characteristics general lighting, light emitting diode (LED) manufacturers such as efficiency, brightness, and colour quality, which must slash costs and boost fab productivity. Inline depend on the composition and structure of the device inspection will be critical in that effort, speeding the fab layer. The industry currently uses photoluminescence, ramp process and increasing production yields. In the reflectance measurements, x-ray diffraction, and similar front end wafer semiconductor process, epitaxial layer analytical techniques to monitor wavelength, film thickness defects in particular can account for as much as 50% of uniformity, material composition, and other metrics tied to the total wafer level yield budget. The KLA-Tencor’s optical performance and parametric yield. In addition, the Candela surface inspection system is designed for the industry is seeing increasing adoption of automated inspection needs of the LED industry and can capture a inspection tools for monitoring and control of epitaxial wide variety of mission-critical substrate and epitaxial defects. Epi defects are known to impact the electrical defects. Full implementation of inline inspection and and optical properties of LED devices as well as limiting statistical process control (SPC) could cut yield loss from reliability and lifetime. Functional yields can vary from epi defects in half while significantly increasing the metal- batch to batch – typical yields at full wafer test (FWT) can organic chemical vapour deposition (MOCVD) reactor range from 60% to above 90% depending on chip uptime. design, material defects, and fabrication process
Figure 1: Key inspection points in the LED manufacturing process
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LED inspection
Epi defect correlation KLA-Tencor’s inline inspection system is designed specifically for the defect inspection requirements of the LED industry. The optical design uses multi-channel detection technology to measure the scatter, reflectivity, phase shift, and topographic variations across the transparent substrate surface (Figure 2). Multiple measurements are made enabling production grade throughput and 100% surface coverage.
After scanning, the analysis software extracts defects from the background signal, classifies them by defect type, and reports defect parameters and locations. For example, during inspection of polished sapphire substrates, the inspection recipe may include particles, scratches, pits, slurry residues and stains. Typical GaN-epitaxial layer Figure 2: variations. Epitaxial layer defects in particular can account defects include particles, scratches, micropits, Candela design for as much as 50% of the total wafer level yield budget. microcracks, crescents, circles, hexagon bumps, and with multi- Industry leaders who use automated inspection to monitor other topographic defects. channel defect densities within wafer, wafer-to-wafer, and batch-to- analysis to batch estimate that optimal inspection practices can An analysis grid can be set to match the die dimensions, detect and reduce the yield impact of material defects and offer allowing correlations between individual defects and final classify a wide significantly higher yields. wafer test results. For example, Figure 3 shows the range of influence of epi defects on device performance. In this mission-critical Key inspection points across the front-end process study, the device die grid was overlaid on the Candela defects include before and after cleaning and final preparation of defect map and pass/fail criteria was set based on known substrates, and after deposition of the epitaxial layer killer defects (i.e. epi pits, crescents, hexagon bumps, and (Figure 1). If a yield crash occurs, having data from topography clusters). It is important to note that surface multiple inspection points greatly simplifies the root cause particles were omitted from the pass/fail criteria as analysis and helps prevent misguided process surface particles are added and removed many times adjustments. There is no need to alter MOCVD process throughout processing. parameters when the underlying problem can be traced to incoming substrate quality. After device fabrication, FWT electrical probe data was collected. Failed die were defined as those with a reverse leakage current greater than 1mA indicating a short of the device p-n junction. The corresponding yield map was overlaid with the Candela defect map to demonstrate the correlation between epi defects and LED device yield. Dies with known killer epi defects had a 52.1% failure rate (or kill ratio) at electrical testing, while dies without epi defects had only a 10.5% failure rate. Thus, dies with killer epi defects had a 5X greater probability of failure than those without defects.
Figure 4 shows the bar graph of the yield loss for the samples in this study. From the correlation investigation, total yield loss can be partitioned into “epi defect induced yield loss” and “other sources of yield loss.” Other sources of yield loss include fabrication induced defects, particle and handling contamination, etc. The total yield loss after FWT for the three LED wafers analyzed was 15.3%, 17.5%, and 14.3% of which 6.0%, 7.2%, and 5.5%, respectively, could be attributed to epi defects. In this example, the epi defect induced yield loss represents Figure 3: Correlation of epi defects to LED device yield roughly 40% of the total yield loss budget.
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LED inspection
Best Known Methods (BKMs) Manual inspection techniques are inadequate for full wafer coverage and do not provide detection and classification results in a quantitative and repeatable manner. At best, manual inspection techniques might detect a rise in defectivity due to a major process excursion, but they will miss a transient increase in the severity of specific killer defects such as pits or hexagon bumps. Such minor excursions, subtle increases in killer defect densities, are virtually undetectable through manual inspection techniques, but can account for a substantial fraction of total yield loss.
Figure 5 shows the value of automated inspection for manufacturers can more readily set and enforce material early detection of an epi reactor excursion of epi pits quality specifications, raising both yield and overall device Figure 4: known to short the device p-n junction. The upper portion performance. Sample yield of the figure illustrates a minor excursion which goes Loss undetected by manual inspection. A typical fab cycle MOCVD processes produce a variety of GaN epi defects; through FWT is two to three weeks. Thus, for a common yield-impacting defects include hexagonal pits manufacturer running at 20,000 wafer starts per month and bumps, crescents, circles, and other topographic (WSPM) the feedback loop does not occur until the defects. In addition to such device killers, GaN epi cracks wafers reach electrical FWT. In the case of a two-week are also known to be a significant reliability killer. As fab cycle, a minor excursion would expose 10,000 wafers LEDs make their way into higher-end applications such as to increased defect densities and increased yield loss. LCD backlighting, automotive, and general lighting, field The lower portion of Figure 5 illustrates how automated reliability and LED performance longevity are of critical inspection isolates the defect excursion. importance.
Corrective actions quickly reduce defectivity levels to GaN epi cracks can be extremely problematic to LED Figure 5: within process control limits. Fewer wafers are exposed to makers as these defects cannot be screened at FWT or The value of killer defects, reducing incremental yield loss. Early final probe test and only later result in field failures and automated detection of excursions through automated inspection expensive recalls. inspection for translates to millions of dollars in savings each year for early detection LED chip makers. The cost of the MOCVD epitaxial layer Figures 7.a and 7.b illustrate Candela inspection images of an epi is also an important contributor to overall device cost. for GaN epi morphology and epi crack defects. These reactor MOCVD equipment accounts for about 65% of the defects can be readily detected and classified in the excursion of capital cost of an LED fab (source: Bank of America output defect map. epi pits Merrill Lynch Global Research, 2009). Maximizing the uptime and productivity of these systems is critical. Leading LED manufacturers use Candela defect data to implement SPC monitoring on each MOCVD reactor, thereby providing a rapid control loop should the defect density of a given reactor exceed process control limits. Substrate and epi-layer defects Common defects on sapphire substrates include particles, pits, scratches and CMP process stains. Substrate pits are known to cause GaN epi defects. Sapphire substrate stains are a root cause of localized areas of GaN epi roughness, where underlying high densities of atomic crystal dislocations can short device p-n junctions. Figure 6 illustrates the cause-and-effect of substrate stains on subsequent GaN-epi growth.
Automated inspection of incoming substrates verifies substrate quality. With clear pass/fail criteria,
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LED inspection
implemented, defect levels are high with wide run-to-run tolerances. Quantitative and methodical inspection results provide engineers with the necessary data to design experiments aimed to reduce epi defectivity and improve production yields. On average, LED makers will achieve a 2-3% improvement in FWT yield within the first 6 months of ownership.
2. Fewer production lots exposed to yield loss from minor excursions. Once baseline defect levels are established, control limits are put in place to monitor each MOCVD reactor. Defect inspection provides a feedback loop for corrective actions on MOCVD process parameters. Inspection sampling rates are typically 100% in order to address within-wafer, wafer-to-wafer, and run-to-run trends. Reduced exposure to minor excursions — which may last for weeks, or even months — is the most common economic gain realized by LED device manufacturers.
Figure 6: Improving yield 3. Prevention of minor excursions from becoming Impact of Inline inspection delivers ROI by helping to improve yield, major excursions. substrate stains minimize process excursions, and increase MOCVD Defect inspection not only provides a feedback loop to on GaN-epi uptime. Inline defect inspection, combined with SPC minimize the impact of minor excursions, but also helps to monitoring, provides a rapid feedback loop for tuning prevent minor excursions from becoming major excursions reactor growth parameters and correcting process thereby improving MOCVD uptime and overall problems. If these interventions keep epi defectivity within productivity. control limits there is less need for preventive maintenance procedures and their associated downtime. These three components of value are the key drivers for implementation of automated inline inspection. Reducing Figure 8 illustrates a timeline representative of the killer defect densities results in yield improvement while evolution of process control improvements and benefits defect density SPC results in less exposure to minor derived from automated inline inspection. The x-axis excursions and increased MOCVD uptime. Leading LED begins at time = 0, i.e. the point in time when an LED fab manufacturers worldwide have demonstrated that the implements automated inspection with production SPC value derived from automated inspection translates to monitoring. Figure 8 summarizes the three key economic millions of dollars in savings each year. benefits derived from automated inspection with SPC: Conclusions 1. Killer defect reduction from process improvement. Epi defects in the bottleneck MOCVD process are When production-grade automated inspection is first frequent yield killers and account for roughly half of the
Above left: Figure 7.a: Candela specular and topography images of typical epi topography defects Above right: Figure 7.b: Candela specular and topography images of typical epi crack defects
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LED inspection
Figure 8: Key value drivers of automated inline inspection
total wafer level yield budget. Implementation of inline reduction, early detection and prevention of minor inspection and SPC monitoring of the MOCVD process and major excursion trends. KLA-Tencor’s Candela could cut the yield loss from epi defects in half. surface inspection system allows comprehensive inspection and control of epi process and helps LED These yield and productivity (MOCVD uptime) manufacturers realize this multi-million dollar yield enhancements are achieved through killer defect opportunity.
April/May 2010 www.compoundsemiconductor.net 35 BOC Final DR 26/4/10 10:46 Page 36
industry interview
Improved LED production with integrated vacuum and abatement Companies seek to constantly improve their production methods. HBLED manufacturers are faced with many challenges including vacuum and abatement. Mike Czerniak, Product Marketing Manager, Exhaust Gas Management at Edwards discusses the benefits of combustion based abatement technology.
he technology used to Tmanufacture high brightness LEDs (HBLEDs) made from gallium nitride (GaN) has developed rapidly over the last dozen years, and market growth has continued, despite the current economic slowdown. This is a combination of developments in LED technology, the size and Figure 1: contrast benefits LEDs offer in flat HBLEDs are panel applications and adesire by replacing both governments and individual incandescent consumers around the world to bulbs in reduce energy consumption due to automobiles. concerns about global warming. As manufacturing processes scale to conventional wet scrubbers, requiring Current market opportunities driving higher volumes, the relative them to be cleaned every month or the expansion in LED production contribution of variable costs to cost- two, during which time the already include laptop computers, as of-ownership (CoO) often grows as production tools are idle, reducing well as liquid crystal displays (LCD) fixed costs are distributed over the productivity and increasing tool CoO. backlighting used in LED TVs and increased volume of production. In automotive applications. The LED addition, ramping LED volume This article discusses the pumping consumer lighting market is also production also increases the and abatement requirements needed showing growth as LED efficiency demands on both vacuum and to accommodate the use of hydrogen has increased to over 100 lumens abatement systems, which must and ammonia in HBLED production, per watt. For LED technology to handle higher volumes of production and highlights an abatement become truly competitive in mass- gases or manufacturing by-products, technology that can significantly market applications, however, it must respectively. reduce manufacturing cost of still achieve even greater reductions ownership. It also presents a new in the initial cost per lumen. The GaN compound semiconductor approach to implementing vacuum manufacturing processes used to and abatement systems within a LED manufacturers hope to achieve produce LEDs require large flows of process tool that can help to further this cost reduction through economy hydrogen and ammonia. Because of reduce system CoO. of scale that comes with high volume the small size of the hydrogen production. Increasing production is molecule, this gas is difficult to Vacuum Pumping dependent upon demand. LED pump, especially in high volumes. Pumping hydrogen, regardless of the manufacturing strategies are focused At the same time, depending on the process involved, presents certain on addressing the technical aspects abatement technology in use, challenges because of the gas’s of high-volume production, while also ammonia can produce solid by- small molecular size and low minimizing both the capital products during the waste removal viscosity, which is approximately half expenditures and operating costs of process that tend to clog the bath, that of nitrogen. While these production equipment. recirculation pump and drain pipes in characteristics are not an issue when
36 www.compoundsemiconductor.net April/May 2010 BOC Final DR 26/4/10 10:46 Page 37
interview industry
operates with clearances set to powder handling. In addition, account for the thermal properties of Edwards’ pumps incorporate a the gas, and integrates a progressive unique, proprietary seal technology nitrogen purge capacity to offset the that helps to prevent ammonia leaks. challenges of pumping this lighter These capabilities reduce gas at higher pressures. Finally, since maintenance intervals and extend hydrogen is flammable if mixed with pump life, thereby helping to reduce an oxidant such as air, the pump overall tool CoO. The vacuum pump exhaust must be appropriately offers further CoO savings through managed to avoid ignition. reduced energy consumption.
As mentioned earlier, pumps used in Exhaust Gas Abatement the metalorganic chemical vapor- In LED manufacturing, the extraction, phase deposition (MOCVD) safe handling and disposal of gases processes used to manufacture from MOCVD processes significantly Figure 2: pumping at low pressures, they LEDs also handle high volumes of contribute to manufacturing CoO. Edwards’ iXH become a problem when the gas is ammonia. This means they must be The conventional approach to dry vacuum compressed towards atmospheric highly corrosive-resistant. Modular exhaust gas management uses a wet pump has been pressure in a vacuum pump. At these dry pumps have proven to address scrubbing technology that adds specifically pressures, due to its low viscosity, the challenges of pumping both significant costs to the manufacturing designed to hydrogen tends to leak back through ammonia and hydrogen in a process in terms of energy use, handle the high pump clearances, reducing the production environment, while also water consumption and treatment. volumes of effective pumping speed. offering potential CoO savings. ammonia and Hydrogen also has a much higher Edward’s iXH pump (Fig. 2), for Combustion-based abatement offers hydrogen thermal conductivity (seven times example, has been specifically an attractive alternative to wet involved in greater) than heavier gases such as designed to meet the challenges scrubbing. While capital costs are HBLED nitrogen. As a result, systems associated with pumping high approximately the same, combustion- production pumping hydrogen typically have a volumes of ammonia and hydrogen based abatement systems offer different thermal profile and different with enhanced purge flow, greatly reduced operating costs, as component dimensions than those temperature-controlled operating illustrated in Figure 3. Their large pumping nitrogen. A pump optimized range, light gas performance and input flow capability, typically to deal with hydrogen ideally corrosive resistance and improved equivalent to three to five process tool exhausts, eliminates capacity constraints and helps minimize Abatement System SG3000 Wet capital expenditures. At the same No. tools per abatement system 6 3 time, their use of the exhaust gases Fresh water cost $0 $4,505 as the main fuel in the abatement Waste water cost $0 $0 process significantly reduces energy Power cost $4,505 $751 costs. In addition, innovative reaction Nat. gas cost $2,147 $0 chemistries minimize the formation of H2 cost $501 $0 unwanted by-products such as CDA cost $0 $0 nitrogen oxides (NOx), a regulated H2SO4 dosing cost $0 $1,430 emission, or ammonium solids, which require increased system NH3-N treatment by Gas striping tower $0 $751 maintenance downtime, thereby Value of Ammonium sulphate recovered reducing tool productivity. from gas stripping $0 -$2,893 Heat recovery -$20,000 $0 The wet scrubbing technology N2 Cost $158 $158 typically used in the GaN MOCVD GaNcat cartridges/year $0 $0 process essentially bubbles the GaNcat Cartridges disposal costs/year $0 $0 gases through a tub of water where Potential value of heat recovered from they are absorbed. This process, exhaust gas $0 however, does not remove hydrogen, which is the most common waste Total Utility Cost -$12,689 $4,702 gas produced in the MOCVD process. While hydrogen emissions Figure 3: Cost Comparison of Operating Costs for Combustion-Based Systems vs. Wet are not regulated, allowing the gas to Scrub Abatement Systems be vented directly into the
April/May 2010 www.compoundsemiconductor.net 37 BOC Final DR 26/4/10 10:46 Page 38
industry interview
atmosphere, there is a slight, but result, maintenance intervals are potential danger that static electricity increased, while maintenance times could ignite the hydrogen during the and spares inventory requirements abatement process, causing an are reduced, all of which helps to explosion and fire. further reduce system CoO.
The second most common gas When burning ammonia in a produced as a by-product of the combustion-based abatement MOCVD process is ammonia. While system, there is always the danger of water scrubbing can eliminate this creating NOx emissions, which are gas, there is a danger, when hard strictly regulated in most regions of water (water containing calcium or the world. Edwards’ Atlas and magnesium salts) is used, that the Spectra G (Fig. 5) abatement ammonia will react with the salts in systems avoid this danger by using a the water producing ammonium proprietary process that carefully solids. Hard water occurs anywhere controls the oxidation of the gases that mountain run-off is a major being burned to minimize NOx source of water, which constitutes a emissions. large portion of the globe. As mentioned earlier, these ammonia In addition to the benefits of solids can build up in the system, combustion-based exhaust systems thereby increasing maintenance in terms of safety, lower CoO and requirements and increasing CoO. reduced environmental concerns, combustion-based abatement Combustion-based abatement technology has a well-established technology solves both these track record for reliability. Hundreds problems by burning the exhaust of combustion-based exhaust Using an integrated vacuum pump Figure 4: Four gases in a controlled way. (Figure 4 abatement systems are deployed at a and abatement system, such as Stage provides a schematic of a typical variety of companies in the Edwards’ Zenith system can reduce Combustion four-stage combustion abatement semiconductor, flat panel and solar installation time by up to 70 percent, system.) The only outside energy cell industries. The efficiency of its cut installation costs by over 60 required is that to operate a small gas treatment process has been percent and eliminate over 50 pilot light, similar to the ones used in field-tested and meets the most percent of facilities connections. home gas furnaces or stoves. Not stringent air emission regulations in Overall capital expenditures are also only does this approach eliminate the Europe, the United States and Asia. significantly reduced. In the case of hydrogen safety issue and the It is currently experiencing a high rate phosphide MOCVD, the Zenith also maintenance problem caused by of adoption by leading LED significantly improves the safety ammonium solids, it offers significant manufacturers world wide. when dealing with toxic gases like reductions in energy costs compared phosphine and arsine. to wet scrub technology. An Integrated Solution The benefits of integrating related In addition, the combustion-based subsystems in a manufacturing tool Author Biography: system is air cooled, with the air flow has been proven in a variety of M.R. Czerniak, Product Marketing being generated by the house industries, such as semiconductor Manager, Exhaust Gas Management, extraction system. This air-cooled and flat panel manufacturing, to help Edwards. design ensures that combustion by- reduce overall manufacturing CoO in products are efficiently transported a variety of ways. For example the from the system to the factory central combined vacuum and exhaust Mike Czerniak received his PhD at scrubber or dust filter. An air-cooled management systems provide Manchester U., and started as a system eliminates many of the fixed enhanced safety, process tool scientist at Philips’ UK laboratories and operating costs associated with compatibility, minimum footprint and before moving to its fab in Nijmegen, a wet process, including the cost of reduced CoO. In addition, since they working on compound the water itself, the capital and are housed in a single extracted semiconductor applications. He was operating costs associated with cabinet with a single utility in marketing at Cambridge water pumps, the energy to run them connection, these integrated systems Instruments and VG Semicon; he is and water treatment costs. Air-cooled provide a highly cost-effective means now the product marketing manager systems are also simpler in design of providing protection should of the Exhaust Gas Management and have fewer moving parts. As a leakage occur. Division of Edwards.
38 www.compoundsemiconductor.net April/May 2010 Semi LEDs vFINAL 26/4/10 11:19 Page 39
LEDs technology
SemiLEDs: Vertical architecture boosts LED performance
Combining a metallic foundation with a vertical current path creates an LED that prevents current crowding, realizes excellent thermal management, and delivers the high efficacies and long lifetimes needed for general illumination, says SemiLEDs’ Trung Doan.
aN-based LEDs are already serving many contact layer, and the extraction efficiency is improved applications. They are illuminating mobile with the mirror, which is highly reflective at visible G wavelengths. Thanks to this design, our LEDs trap far less phone keypads, backlighting LCD displays, generating camera flash, and providing the red and green light than typical, large LEDs on sapphire. components in full-color outdoor displays. With recent breakthroughs in efficiency and cost, high-brightness, Copper alloy vs sapphire high-power versions of this device are starting to gain Our VLEDs have excellent thermal management that traction in general lighting. stems from the copper alloy foundation. The thermal Figure 1: conductivity of this metal, 400W/mK, is far higher than SemiLEDs’ The general lighting market promises to be very lucrative, that of any substrate currently used for LEDs – it is more devices employ but success in this sector requires low-cost manufacture than ten times that of sapphire - and this gives our a vertical of LEDs with excellent thermal management, efficacy, and devices superior heat dissipation through the chip and out conduction reliability. Managing the heat generated by the LED is of the heat sink. This leads to a lower junction geometry and critical, because increases in junction temperature shorten temperature and ultimately a higher-efficacy, longer-lasting feature a device lifetime and cut efficacy – a 20 degree C rise in device. metal alloy junction temperature drives down output power by at least foundation. 5 percent. An efficacy greater than 100 lm/W is also Conventional LEDs are also hampered by the location of The metal needed if LED products are to offer a viable alternative to the n- and p-type electrode pads. Both these pads are alloy is highly incumbent lighting technologies. And these solid-state located on the same side as sapphire, an electrical reflective, and devices must also deliver a reliability of 20,000 hours insulator. Device processing involves the removal of p- can boost under continuous operation and have a cost of GaN and the active region to expose the n-GaN layer on the light ownerships that exceeds 200 lumens per dollar. which the n-pad is deposited. The downside of all this extraction processing is that it cuts the total emission area of the efficiency of At SemiLEDs we have developed an LED that can meet device. the LED all these criteria. Our firm, which is headquartered in the US and has chip fabrication facilities in Hsinchu Science Park, Taiwan, released an I-core LED in December 2009 that is capable of very high levels of performance, thanks to its vertical device architecture and metal alloy base.
The I-core shares the vertical LED (VLED) structure of all our products. It consists of: a mirror, directly deposited on copper alloy that acts as an anode and reflector; a 0.2 μm thick p-GaN/p-AlGaN layer; an InGaN/GaN multiple quantum well active region; and a 4 μm thick n-GaN layer (see Figure 1). The n-surface is patterned to enhance the light extraction. One benefit of this novel architecture is that it avoids the current crowding issues that plague conventional LEDs, because current can pass vertically from the anode to the cathode. Additional strengths are that the photons generated in the active layer can escape without passing through any semi-transparent conductive
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technology LEDs
A further weakness of the conventional device architecture is associated with its routing of the current through the chip (see Figure 2). As current passes from the anode to the cathode it spreads laterally along the n- GaN layer. This causes current crowding underneath the n-pad, which increases serial dynamic resistance and operating voltage, and ultimately impairs LED efficacy. Conventional GaN-on-sapphire LEDs can also be hampered by a lack of current spreading in the p-GaN layer, due to its low conductivity.
Weaknesses associated with GaN-on-sapphire LEDs, such as current crowding issues and the low thermal conductivity of the substrate (which is typically 100 μm thick) force conventional LEDs to operate under low current density conditions in order to prevent thermal Fig.4 Even at very high drive currents, the operating problems. This hampers the application of conventional voltage of SemiLEDs I-core LED is well below 4V GaN LEDs on sapphire, especially high-power versions used for required for solid-state lighting applications. Current crowding is not an issue in our VLEDs, because the current travels vertically from the bottom anode to the than its p-type cousin, and this enables sufficient current top cathode (see Figure 3). This path slashes the serial spreading – there is no need to resort to a semi- dynamic resistance compared to conventional LEDs on transparent conductive layer. sapphire. In addition, n-GaN has much higher conductivity Avoiding the use of this semi-transparent layer reduces light absorption in the device, thereby boosting LED output, and the excellent current spreading in the n-type layer opens the door to scaling chip dimensions without impacting efficiency.
LEDs with a vertical architecture can generate heat in the active region and at the metal contact, and dissipate this energy through the p-type GaN interface. However, we have found that heat extraction can be even faster if the thin p-type GaN (~0.2 μm) layer is directly laid on the layers of a high thermal conductivity metal alloy. Thanks to faster heat dissipation, it is possible to realize the high drive currents needed for LEDs targeting solid-state lighting applications. Figure 2: One of the weaknesses of conventional LEDs on sapphire is their lateral conduction path between Electrode design the n- and p-type electrodes. This increase the The efficacy of any LED depends on its electrode resistance in the device, thereby increasing the LED’s arrangement, because this affects how light can escape operating voltage and reducing its efficiency from the top surface of the n-GaN layer. In our devices, we employ an n-electrode pattern that takes into account the current spreading of the n-GaN layer. We have found that each n-electrode line can spread the current over 250 μm. The electrode design for our I-core LED differs Figure 3: from the first-generation devices, and improves light One of the extraction and brightness. Thanks to higher conductivity in strengths of the n-GaN layer, the total area covered by the electrode SemiLEDs can be reduced, leading to less light being blocked by device this structure. On top of this increase in brightness, the architecture is latest design offers a high degree of compatibility with the vertical single and double wire bonds. conduction path that The efficacy benchmark for LED targeting conventional abolishes lighting is 100 lm/W, and our I-Core device is more than current capable of this – it can deliver 120 lm/W at a drive crowding current of 350 mA, which corresponds to a forward
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LEDs technology
Figure 5: SemiLEDs latest LEDs are more robust than previous products. Figure 6: The reliability of packaged VLED chips in Output fell by less than 5 percent during a 2,000 hour burn in test at light output power after 3 times reflow junction temperature of 115±10degrees C
voltage is only 3.0V. This performance is realized by forward voltage shift of less than 1 percent for a 350 mA housing the device in a white LED package. When drive current; and no leakage current at -5 V. designing our I-core LED, we did more than just focus on optimizing the brightness of the chip – we also strived to Our packaged I-core LEDs are capable of operating in improve reliability. Assessments were made by placing the harsh environments, such as desert conditions or on the chip in a SMD package with silicone capsulation, and outside of an airplane. Figure 6 shows the reliability of testing this entity in a closed space with a stable ambient packaged I-core chips and light output power after temperature. The device was mounted on a PCB and subjected to three times reflow cycle testing, a process driven at 350 mA, and we calculated that its junction that involves heating the device from ambient to around temperature was 115±10 degrees C. These tests showed 250 degrees C, and then cooling it at up to 6 degrres C that the light output fell by less than 5 percent, even after per second. The light output remains steady at 100 a burn-in test of 2,000 hours. In real life applications at percent throughout these cycles. Figure 7 shows that the room temperature, no degradation of light output has packaged I-core LEDs show no operation voltage failures been observed so far. after three times reflow cycle testing.
The excellent reliability of our I-core LED, which builds on When we designed our I-core LED, we addressed all the the performance of earlier products, is also evident from major issues that are currently facing high power LEDs. the results of our thermal shock tests. These tests Our latest product is not only the most reliable device that involved assessments of packaged LEDs held at we have ever made – it is also significantly brighter. This temperatures ranging from –40 degrees C (15min) to 125 is partly the result of a robust design that delivers far high degrees C (15min). After 500 cycles of high and low light extraction, and also a consequence of a superior temperature aging, our packaged I-core LEDs showed: no epitaxial structure that delivers a higher internal efficiency. obvious degradation of the light output power; a typical Another key strength of the I-core is the patented, SemiLEDs has proprietary MvpLED technology on which it is based, improved the which features a vertical structure with a copper alloy electrode base that provides multiple benefits over conventional geometry of its LEDs on sapphire. Thanks to all these strengths, we LEDs. The believe that the I-core is well-positioned to be at the electrodes in forefront of the solid-state lighting revolution. the previous generation of devices (left) covered a higher proportion of the chip area than the I-Core LED (right), and this led to Figure 7: The reliability of packaged I-core LEDs in higher light operation voltage at 350mA after 3 times reflow absorption
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technology LEDs
Seren promises brighter, cheaper LEDs
A UK start-up is claiming to have developed a novel device treatment technology that paves the way for the manufacture of brighter, lower-cost LEDs. Richard Stevenson investigates.
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LEDs technology
Templates for Blue & eneral illumination offers by the crystal quality by reducing the Gfar the most lucrative market dislocation density.” UV LEDs for the white LED. But if this nitride-based device is to grab significant market share The standard approach to forming these from incandescents and compact structures involves a process known as two GaN, AlN, AlGaN, fluorescent lamps, then its output will have step growth: deposition of a low- InN, InGaN to increase and production costs fall. temperature GaN nucleation layer; followed by growth of a thick GaN layer and then the One company that claims to have a main structure at a higher temperature. technology that can do just this is a little “There are a number of issues relating to known UK start-up called Seren Photonics. that two step growth, particularly for the UV This University of Sheffield spin-off, which LED,” explains Wang. “For example, there takes its name from the Welsh word for star, are strong external absorption issues, a has an intriguing, low-cost device treatment cracking issue, and there’s another major that is claimed to boost light output by point – [Shuji] Nakumura’s patent. You increasing extraction efficiency and internal can’t get around that.” quantum efficiency. Wang and his team explored a different “We combine fundamental physics and route to nitride growth based on a high- device technology to achieve a new type of temperature, AlN buffer. Although this device,” says Tao Wang, the technical technology was developed for UV LEDs, it director and the current driving force behind can be used to improve the crystal quality of the company’s technology. Exactly how the any form of nitride device. World leaders in development company increases its LED output is a bit of of Hydride Vapour Phase Epitaxy a mystery, because Wang is not prepared to According to Wang, there are several (HVPE) processes and techniques go into specifics at this stage. That’s a advantages associated with the high- for the production of novel shame for everyone with an interest in the temperature AlN buffer approach, including compound semiconductors inner workings of LED chips, but Wang’s freedom regarding the thickness of this AlN tight-lipped approach is understandable: layer – it just needs to be smooth. Further • Templates although Seren has filed for a key patent, it gains for LED production including a Wafer size: 50mm-150mm is yet to be granted. But when it is, Wang massive reduction in the density of • assures us that he will lift the veil and dislocations, particularly the screw type. • Research grade InGaN wafers publish a series of papers detailing the Evidence for this is provided by X-ray • Custom design epitaxy technology. rocking-curve measurements, and Contract development transmission electron microscopy. • Nitride veteran • Small and large batch Wang’s interest in the nitrides goes back a While Wang was developing his process for quantities available long way, and before he came to the UK he improving UV LED material quality, he Wide range of materials (GaN, spent five years working at the Nitride started to think about a new way to process Semiconductor Organization in Tokushima, devices. The technology that underpins AlN, AlGaN, InN and InGaN) Japan. During his time at this company, Seren Photonics was underway. “The idea on different sizes and types of which is spin-off of the local university, he started in 2004, and we did some substrates (sapphire or SiC) focused on epitaxial growth technology. preliminary work in July 2007, which is While he was there he yearned for the directly related to the IP technology that Contact us now! freedom associated with an academic Seren has,” explains Wang. Email: [email protected] career, and in 2002 he took a lectureship at Technologies and Devices International the University of Sheffield. “Sheffield has Getting going Tel: +1 301 572 7834 good facilities, and allows me to have my When researchers at most universities think www.oxford-instruments.com/tdi1 own group,” explains Wang. about starting a company, they have to go out and try and win funding themselves. At When he arrived at Sheffield he began by Sheffield, though, things are a quite different focusing on improving the epitaxial quality of indeed. In 2005, this university gave the ultraviolet LED structures. “The UV LED is rights for all of its university-owned research much more sensitive to dislocation density to Fusion IP, which has been supporting than the blue or the green. We wanted to Seren Photonics since its inception in use a different, novel technology to improve December 2009.
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technology LEDs
and light output. The only part of LED delivering over 200 lm/W, and other fabrication that cannot be performed by researchers have claimed that the Wang’s team is the packaging of the chip. theoretical efficiency limit for LEDs is just “Eventually we’ll have to do this, but at this over 300 lm/W. The implication is that a moment we would like to make a doubling of light output from Cree’s chip is collaboration with a company that does impossible. However, Wang argues that packaging.” theoretical efficiency figures can be misleading. “The theoretical value for the So today’s evaluations are based on bare limit depends on a lot of factors. I’ve heard a chips. They have found that their treatment talk that says 480 lm/W. It’s unclear – of 0.3 mm by 0.3 mm chips driven at 20 mA nobody knows.” leads to a doubling of light output, while plotoluminescence intensity undergoes a Chipmakers are a secretive bunch, and it is massive hike, increasing by a factor of 6-10. possible that one of them may already be Seren Photonics has access to growth using a process like that developed by facilities at the EPSRC National Centre Wang claims that his treatment can not only Wang to boost LED output. But Wang for III-V Technologies in Sheffield boost LED output – it can also cut the cost- thinks that this is unlikely. He argues that his per-lumen of these emitters. He argues that process is not related to improving epitaxial his process is compatible with LED quality, which is the path of progress Seren is currently led by managing director, epiwafers of reasonable material quality. pursued by the leading chipmakers, such as Carl Griffiths, who has experience in the III- When treated with his process, he claims Nichia and Cree. But to be on the safe side, V industry, having previously worked for the that they can outperform LEDs made with Wang and his colleagues have employed Welsh instrumentation firm ORS. Griffiths the very best material. “With Nichia, the experts to trawl through the patent literature has a very wide experience in marketing and crystal quality is high, but the cost is also on their behalf. This turned up nothing that management, according to Wang, plus high. Our idea is to use standard, encroaches on Seren’s technology. good expertise in demonstrating the commercially available epiwafers – not the company’s LEDs to potential customers. best available.” Even if Seren’s IP is safe for year to come, it Seren also has a chairman, Peter Grant, would be tough for this start-up to take on who is the director of Fusion IP, plus an Obviously, lowering the cost-per-lumen by the big chipmakers. However, that is not the employee in charge of financing. this approach is only possible if the plan for the company – it wants to license treatment process per wafer is cheaper than its technology to these firms, and work with Funding for the development of Seren the difference in price between the highest them. To this end, over the next twelve Photonics’ technology partly comes from quality epiwafers and standard equivalents. months the Sheffield spin-out is aiming to Fusion IP and another, undisclosed Wang claims that this is the case. He says attract more funding from companies that company. In addition, efforts can be that his treatment technology requires just a are interested in sharing its technology. supported by some of the research grants few processing steps, and these can be Armed with this cash, it will then develop that Wang receives from the Engineering performed with the existing equipment better devices for sampling. and Physical Sciences Research Council found in chipmakers’ manufacturing (EPSRC). It’s hard to put an exact figure on facilities, so there are no concerns over high Seren’s technology is still it its infancy, and total funding, but Wang estimates that it is capital expenditure. it will be interesting to see how much about £0.5 million, which is enough to progress can be made over the next few support two post-docs that are developing LEDs deployed for general lighting years. “Currently we don’t know what is the Seren’s technology. More investment in the applications are driven at high current limit that we can have – it could be ten company could follow shortly – several densities, and their performance is times higher, it could be twenty times companies have been in contact, and this hampered by droop. This phenomenon, higher,” enthuses Wang. But even if it’s only may lead to further funding for Seren, or the which is attracting tremendous debate over half as good as that, then Seren is destined sharing of its technology with other its origin, causes a decline in external for success, because its technology will play chipmakers. quantum efficiency as drive current a key part in the development of brighter increases. Wang says that his treated LEDs for general lighting. Today the devices are fabricated at the devices are less susceptible to droop, EPSRC National Centre for III-V because they are able to deliver an Technologies, and Seren just has to pay the equivalent light output at lower drive current. Tao Wang is a Reader in costs of accessing these facilities. Semiconductor Materials Measurements of the devices that are One key question concerning Wang’s and Devices and an produced are performed in Wang’s lab, treatment is whether it could deliver a EPSRC Advanced which is equipped with tools for measuring doubling of the output of all forms of chip. Research Fellow LED photoluminescence, electrical behavior, Cree recently reported a lab device
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LED technology
LED has competition for lighting
There is a lot of hope for LED in general lighting applications but the race is far from won with competing technologies also claiming a stake in this lucrative market. Thomas P. Pearsall, General Secretary of European Photonics Industry Consortium (EPIC) asks what will it take for LEDs to succeed against competing solutions.
lmost everyone knows that HB-LEDs offer a Anew source of lighting with lower energy consumption and longer lifetime. LEDs are now mass-manufactured and sold on a commercial basis. They are the preferred solution for many important lighting applications. A major exception is general lighting applications in home and business applications, which together account for more than 66% (Light’s Labour’s Lost, IEA, 2006, p.35) of the electrical consumption for lighting.
The three main areas where attention is needed in order of priority are marketing, manufacturing cost reduction and performance improvement. LED lighting solutions are more expensive than all other commercial alternatives on a euro-per-lumen basis. LEDs can be sold today in high-end luminaires where the unique performance and appearance of LEDs can contribute to the added value. Two examples are automobiles and backlighting for flat-panel displays. However, the lighting industry has chosen to aim instead at low-end bulb replacement. LED solutions are not cost- competitive for this market segment. In our opinion this of chip size, reduction in current density, improvement in Figure 1. LEDs marketing strategy needs modification. wavelength conversion technologies, and better have a way to packaging for thermal, electrical and optical management. go before In general lighting applications, customers do not buy A reduction of 75% in costs within five years seems to us becoming the technology. They purchase performance and pay attention to be within reach. number one to cost. Since LEDs are efficient, operating costs are low, lighting choice and the cost of ownership is essentially the cost of A competitive lamp for general lighting should produce acquisition. The cost of LED “light bulbs” in euros per about 600 to 1000 lumens. Commercially available LED lumen needs to decline by 75% before they can be lamps do not yet reach this level of emission. There is a competitive with existing fluorescent alternatives. On the lot of space inside the “light bulb” housing, and redesign other hand, there is market space for a higher-priced, of LED lamps can make use of this space to incorporate higher-functionality “smart LED” luminaires which could arrays of LEDs that operate at the maximum efficacy not be challenged by fluorescent solutions. point, rather than at maximum brightness. More engineering work is needed to develop phosphor Manufacturing costs for LEDs will come down. The Haitz technologies that are highly reproducible with colour Law learning-curve predicts that the cost per lumen will temperatures and which do not age. be 50% lower by the time the current generation of compact fluorescent lamps (CFL) burns out. Cost These advances would make sensible standardization reductions for general lighting will come from photonic possible, so that commercially available lamps correspond integration, manufacture on larger substrates, optimisation to accepted levels of performance both in terms of light
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technology LED
An excellent example is the mobile phone. How many owners of this widely used instrument know that there is a modulation-doped mobility-enhanced GaAs transistor inside that exploits quantum mechanics to reduce noise and power consumption? (answer: fewer than one in one million). The features that have assured the success of mobile phones are performance, appearance, ease of use, acquisition cost, reliability, etc
emission and performance over lifetime. Such standards This short list is not exhaustive, and illustrates how the would give a boost to sales on one hand, and prevent the HB-LED can be used successfully as a permanent, non- market space from contamination by cheap, replaceable lighting system in a luminaire that will be underperforming imitations. discarded and replaced periodically for other reasons. Periodic replacement helps to ensure a continuing market Marketing HB LEDs for LED lighting. The HB-LED is chosen because of its An important principle to retain is that practically no one is performance in the application. The LEDs represent a willing to pay more for a product just because it exploits small part of the cost of the luminaire. new or exotic technology. Few people understand or care Automotive lighting that some of the world’s most skilled scientists and HB-LEDs combine high-brightness, low-power engineers have toiled for years to develop technology into consumption, long lifetime, attractive full-colour design a product. capability. A challenge: reach optical power of 1000 lumens from a single chip. An excellent example is the mobile phone. How many LED Backlighting of LCD displays owners of this widely used instrument know that there is a This is the fastest-growing market segment for HB modulation-doped mobility-enhanced GaAs transistor LEDs, LED backlight panels come in two different inside that exploits quantum mechanics to reduce noise designs: edge-illumination and area illumination. and power consumption? (answer: fewer than one in one Coloured RGB LEDs are used along with white LEDs. million). The features that have assured the success of 2-d area illumination enables enhanced contrast and mobile phones are performance, appearance, ease of use, lower power consumption.The volume leading acquisition cost, reliability, etc. Technology is not on the application is backlighting of LCD screens for PCs. list. The same is true for the adoption of HB-LEDs in This market will saturate around 2012 when all PC general lighting. screens will be LED backlit. The volumes for television displays will continue to grow through 2015 when this Appearance market is expected also to saturate. Samsung is the In the case of general lighting, there are two ways to leading adopter and investor fo this application. present any light source. Either it is incorporated in a luminaire, or it is sold as a replacement bulb. The Surgical Lighting appearance factor of these two presentations is radically LED lamps are a lighting source for surgical theatres different. Lighting fixtures with attractive appearance are that does not “cook” the organs under operation. A sold for hundreds of euros. On the other hand, the challenge: marketing needs to assure that LEDs lamp appearance factor of a GLS lightbulb is nearly zero, design can produce the same colour temperature and although there is a familiarity feature, as it is about 100 colour rendering from lamp to lamp and from theatre to years old. Cost of acquisition can be traded off in theatre and over time. Consistent colour balance and exchange for appearance, as Apple has demonstrated rendition are key to the surgeon’s identification of with the i-Phone. HB-LED lamps, with a high acquisition diseased/damaged tissue. cost, can be successfully marketed as part of an expensive luminaire. Examples of expensive luminaires are Architectural and Outdoor Lighting automobiles, LED-LCD television, building illumination, LEDs projection lighting opens up a new dimension in etc. As detailed below, these are exactly the areas where architecture. There are increasing examples of lighting HB-LED lighting has strong market penetration. that defines new facades, effectively replacing architecture. No other source combines luminance and HB-LED Marketing successes access to the full colour palette. Outdoor street lighting
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LED technology
benefits from the fast and simple turn-on of LED lamps for 1000 hours per year, and that the cost of electricity is to implement lighting-on-demand. A challenge: can it 12 euro cents per kWh. Pay-back time assuming that the be shown that outdoor lamps with a good CRI actually incandescent is replaced every year, and the CFL is require less luminance and less power compared to a replaced after 5 years: low-CRI lamp (like sodium vapour) to achieve the same lighting perception? The first result is that the CFL gives a positive result on a cost of ownership basis in the third year. In this simple The lighting customer pays two costs: acquisition and model, the LED is not a cost-effective alternative to the operation. The LED has a relatively high cost of CFL. The break-even point for the LED relative to acquisition compared to other lighting solutions, while the incandescent lamps occurs at 7 years, and if account is cost of operation is the lowest. At the moment of taken of the interest that could be earned on the initial purchase, the cost of acquisition is clearly displayed, but saving, the break-even point occurs after year 10. The there is little or no information about the cost of operation. example illustrates that LED lighting is still too expensive It is no wonder that customers overwhelmingly choose the to be competitive in general lighting applications, if cost of lighting source with the lowest cost of acquisition. ownership is the only criterion. Consumers may be willing to pay a higher cost of acquisition if they can justify the expense. A pleasing In the second scenario below, we consider how much the appearance, new and useful functionality as well as overall cost of LEDs needs to be reduced in order to achieve cost payback in 3 to 5 years makes the proposition payback within 5 years time. All payback calculations are attractive. estimates, and depend on local conditions of application as well as the acquisition and operating costs of lamps. Lighting manufacturers have uniformly decided to For example, in Canada ( and other northern countries), manufacture and market LEDs in the form of GLS bulbs the incandescent light bulb is an helpful heating source as and halogen lamps. This decision removes the well as an inefficient lighting source. Replacement of appearance factor from pricing. They have also decided incandescent lighting by CFL requires additional not to introduce new functionality (such as wireless “operational costs” to supplement heating needs. In control from a mobile phone). This decision removes the Mediterranean countries, the heat generated incandescent functionality factor from pricing. As a result, the adoption lighting is a negative. Use of air conditioning to evacuate of LED lighting will depend only on the payback period. this heat is part of the “operational cost” of incandescent Since the payback period is variable, depending on usage lighting. and electricity tariffs, a precise number cannot be printed on the package, so the customer has no information. In This simple model suggests that an LED lamp could be our opinion this marketing strategy will lead to priced only a few euros more than a CFL in order to be disappointing results and slower than necessary takeup cost-competitive in general lighting applications. Similar for LEDs. conclusions have been reached by Cleantech Approach, who have carried out a more detailed study, Solid-State In the scenario below we show the payback calculation Lighting Benchmark Analysis : Pricing Lifetime costs, and for three scenarios, comparing an incandescent lamp, a Payback that estimates payback times for LED lighting CFL and an LED. The parameters used were taken from replacement for many applications. The conclusion of this commercial products on sale in the largest department study, with which we are in agreement, is that LED store in Paris, France, one that specialises in hardware, lighting is not yet cost competitive with compact lamps and lighting. We assume that the lamps are used fluorescent lighting (CFL).
pay back YEAR 1 23456 7 8910 10 lumens/watt Incandescent 5.1 10.2 15.3 20.4 25.5 30.6 35.7 40.8 45.9 51 40 lumens/W CFL 11 11.8 12.6 13.4 14.2 23 23.8 24.6 25.4 26.2 80 lumens/watt LED 35 35.42 35.8 36.3 36.7 37.1 37.5 37.9 38.4 38.8
pay back YEAR 123456 7 8910 10 lumens/watt Incandescent 5.1 10.2 15.3 20.4 25.5 30.6 35.7 40.8 45.9 51 40 lumens/W CFL 11 11.8 12.6 13.4 14.2 23 23.8 24.6 25.4 26.2 80 lumens/watt LED 13.0 13.4 13.8 14.3 14.7 15.1 15.5 15.9 16.4 16.8
April/May 2010 www.compoundsemiconductor.net 47 CS EPIC vFinal DR 26/4/10 12:20 Page 48
technology SiGe
we could expect a 40% overall cost reduction in 5 years due to “standard” ingenuity. Examples of improvements of this type would be: Processing on larger substrates Increasing chip size Lower cost, higher throughput laser lithography Reduction in current density to reduce losses from droop, and improve efficacy Optimise production for high yield Higher performance phosphors Filling the light-bulb form factor Innovations in thermal management Simplification of the electrical power interface
The Haitz Laws also tell us that disruptive concepts will Figure 2. Lighting product display in a neighbourhood supermarket. The be needed. These may be based on continuous red and orange ovals identify incandescent and halogen while the green processing of LEDs, new synthetic substrates and shows fluorescent. The lamps are primarily by Philips and Osram. alternatives to phosphors for wavelength conversion that would yield strictly repeatable colour temperature. The third key element in cost reduction will come from Incandescent lightbulbs will soon be a thing of the past. standards. Standards bring important cost reductions As they burn out, they will be replaced. The halogen lamp, from manufacturers, while raising appeal for consumers. which looks like an incandescent, and gives off the same Many engineers are working on standards for LEDs. There quality of light and heat, is a possible replacement are international bodies like the CIE, as well as national proposed by major lamp manufacturers. They are three ones such as Energy Star in the United States. A feature times more expensive than incandescent bulbs, but last of a good standard is its relevance to the application only twice as long. Many consumers may understand that under consideration. Standards for automotive lighting this is an even more expensive choice. It is probable that are not the same as general lighting. most of the 12 billion lamp sockets world-wide, which now contain incandescent lamps, will be filled by CFL when Conclusion the incandescent bulb burns out. Since the CFL lasts for Following the ban on incandescent lamps for general 5 to 8 years, this sets the time by which manufacturers lighting, LEDs will not capture this opportunity because should have a competitively priced product. As another there are not yet units that deliver performance at example, I visited a neighbourhood store where I am likely competitive pricing. The space will be filled by CFL and to to go to buy a lamp. Space on the shelves is precious, some measure by halogen lighting substitutes. LEDs and allotted only to products that sell. In figure 2 you can manufacturers will have a second opportunity to replace see that the lighting display is crowded, with 70% of the CFL lamps approaching the end of their product life. product space given to incandescent technologies and Manufacturers should achieve something like a 70% 30% to CFL. There were no LED lamps on display in this reduction in pricing over the next five years in order to location. capture this opportunity.
Manufacturing cost reduction Standard learning-curve improvements will not be enough The current application space for general lighting involving to reach this ambitious target. Substantial disruptive point sources like light bulbs, consists of 12 billion invention will be needed. Large LED manufacturers have sockets (see Light’s Labours Lost, IEA, 2006). As also major investments in the competing technologies, incandescent lighting is being phased out, these sockets and will continue to exploit the lighting solutions that are being filled by principally by CFL replacements with a generate the best return on investment. However, if the lifetime of 5 to 8 years. This lifetime creates a potential pricing of LEDs and CFL lamps becomes similar, there opening for LED general lighting sources. During the next may be a chance to implement a ban on fluorescent five years, the costs of LED solutions need to drop by lighting as a way to limit mercury proliferation in the about 70% in order to reach competitive pricing levels. environment. Finding a future for LEDs in the general lighting market depends on a complex mixture of elements The Haitz Laws observe trends in LED performance and most of which need substantial improvements: marketing, cost. Currently the cost per lumen is dropping at about manufacturing methods, performance, technology and 10% per year. Extrapolating, using this rate tells us that standards, being the most important.
48 www.compoundsemiconductor.net April/May 2010 Research Review Final 26/4/10 11:01 Page 49
review research
LED droop: Lumileds strengthens Auger case
Philips Lumileds has gathered further To determine differential carrier lifetimes, the saturates, due to a process known as evidence to support its claim that Auger researchers fabricated vertically injected phase-space filling. recombination is the primary cause of LED LEDs, and drove them with 3 μs pulses to droop, the decline in a device’s external avoid device heating. A small, AC voltage The researchers then compared their data quantum efficiency at higher drive currents. was superimposed onto this series of with the standard model for the pulses, and this provided a probe for the recombination rate, which involves the sum Researchers Aurélien David and Michael lifetime measurement. of: Shockley-Read-Hall recombination; Grundmann determined that droop is radiative, bimolecular recombination; and an correlated to a shortening of the non- By assuming perfect injection efficiency, the Auger process that depends on the cube of radiative lifetime after studying a 430 nm researchers calculated carrier density, and the carrier density. This model provided an GaN LED featuring a double heterostructure then the radiative and non-radiative lifetimes. excellent fit to the experimental data, and with a 15 nm thick InGaN layer. “The non- produced a value for the Auger coefficient radiative lifetime is quantitatively compatible They found that the non-radiative of 10-29 cm6 s-1. with Auger scattering, which supports contribution to the lifetime decreases as Auger as being this non-radiative current increases, indicating the onset of an A. David et al. Appl. Phys. Lett. 96 mechanism,” explains David. additional non-radiative process. At high 103504 (2010) current densities the radiative lifetime Although the data presented by Lumileds is in quantitative agreement with Auger scattering, it is still possible that droop is caused by another mechanism. The origin of droop is highly controversial, and many Swiss speed AlInN HEMTs different theories for its cause have been put forward over the last few years. A Swiss partnership between Colombo Bolognesi’s group at ETH-Zürich and One alternative explanation for droop is Nicolas Grandjean’s group at EPFL have interband absorption, which, like Auger broken the speed record for AlInN/GaN scattering, is a non-radiative process that HEMTs. When deposited on SiC, their depends on a cubic power law related to devices can deliver a current gain cut-off the carrier density. However, David and frequency (fT) of 144 GHz, an extrinsic Grundmann argue that interband absorption transconductance of 480 mS/mm and a is related to optical re-absorption, and is maximum current density of 1.84 A/mm. strongly influenced by geometric factors. Silicon offers a cheaper, but inferior Droop, however, appears to have a foundation that leads to a fT of 113 GHz. The AlInN/GaN HEMT fabricated by ETH universal, geometry-independent behavior. Zürich and EPFL features Ni/Au T-shaped AlInN/GaN HEMTs promise faster speeds 100 nm gates. Credit: ETH Zurich Another explanation for droop is based on than their AlGaN/GaN cousins, but until energetic carriers flying over the active now they have lagged a long way behind. region. However, the Lumileds’ researchers “Our work has closed the gap for 100 nm One of the weaknesses of the team’s say that this can now be ruled out, because gate lengths, presumably thanks to progress AlInN/GaN HEMT is its residual gate this process would not influence the lifetime in the crystal quality of AlInN/GaN leakage, which prevents complete channel of the carriers trapped in the active region. materials,” explains Bolognesi. pinch-off at source-drain voltages above 3V. They have shown that this lifetime shortens The source of this leakage might be caused at higher current densities. He claims that the AlInN/GaN HEMT has by tunneling through the barrier, or leakage the potential to outperform its AlGaN/GaN through either dislocation cores or the One scenario that they cannot rule out is equivalent because its heterostructure can surface of the structure. carrier capture and escape. However, they realize a higher channel electron density believe that this is unlikely, because there is with a thin top barrier. “This allows one to “If the gate leakage problem can be fixed, it no reason why this process should depend place the gate electrode closer to the will be interesting to explore how these on the cube of the carrier density. channel and thereby maintain a better devices behave in power applications,” says electrostatic control of the transistor, so as Bolognesi. Another target for the Probing the sample to minimize the so-called ‘short-channel partnership is the optimization of the Lumileds’ latest work on droop has focused effects’ that curtail performance in shorter epitaxial and device fabrication processes. on determining the evolution of radiative and gate devices.” Thanks to the combination of “And of course, we are interested in finding non-radiative lifetimes by measuring the small gate-to-channel distance and a high out just how fast we can make these differential carrier lifetimes in LEDs, and electron density in the channel, these devices go.” combining this data with an internal transistors can realize very high quantum efficiency measurement that gave transconductances, and ultimately higher H. Sun et al. IEEE Electron Device Lett. a peak value of 65 percent. cut-off frequencies. 31 292 (2010)
April/May 2010 www.compoundsemiconductor.net 49 Research Review Final 26/4/10 11:01 Page 50
research review Complex barrier boosts UV output
Japanese researchers have developed a complex electron-blocking region that can increase electron injection and deliver a massive hike in ultraviolet LED output.
Switching from a conventional single barrier to a multi-quantum barrier led to a seven- fold increase in the output of a 250 nm LED. The latter device delivered a maximum output of 15 mW, and a peak external quantum efficiency of 1.5 percent.
The team of researchers from RIKEN, Saitama, and CREST estimate that the modification to the barrier increased electron injection efficiency from 22 percent to 75 percent. Low injection efficiency - which results from a combination of electron leakage from the active region into the p- type layers, and low hole concentration in The multi-quantum barrier has increased the output power and the external quantum AlGaN layers with an aluminum content of efficiency of ultra-violet LEDs. 70 percent or more – is a major factor limiting the output of ultraviolet LEDs. μ 2 m-thick, silicon doped Al0.77Ga0.23N 20 mA current. According to Hirayama, this Lead author Hideki Hirayama told buffer; a three layer multiple quantum well high voltage stems from the 1 mm Compound Semiconductor that the team with 1.5 nm undoped Al0.62Ga0.38N wells separation between the two electrodes. selected the thickness of the barrier and and 6 nm Al0.77Ga0.23N barriers; a 25 They have now reduced this distance with a valley layers in their multi-quantum barrier to nm-thick undoped Al0.77Ga0.23N barrier; a flip-chip device geometry, and the operating enhance its electron reflection. Calculations five layer multi-quantum barrier with 4 nm- voltage has plummeted to just 8V. suggest that the effective height of the thick, magnesium-doped Al0.95Ga0.05N barrier is two-to-three times that of a single barriers and 5 nm-thick magnesium-doped Improvements in light extraction efficiency barrier. Al0.77Ga0.23N inter layers; a 25 nm-thick, are now on the agenda. The latest devices magnesium-doped Al0.77Ga0.23N layer; extract just eight percent of the light, and Low-pressure MOCVD was used to grow and a 60 nm-thick, magnesium-doped the team plans to improve this figure by a the ultraviolet LED structure on a low- contact layer. Both electrodes were made factor of five. threading-dislocation density AlN buffer that from Ni/Au, and the p-type electrode was was 3.4 μm thick, and had an “edge-type” 300 μm x 300 μm. H. Hirayama et al. Appl. Phys. Express 3 dislocation density of 7 x 108 cm-2. 031002 (2010) The LED described in the Japanese team’s http://www.riken.go.jp/r-world/info/ The ultraviolet LED structure consisted of: a paper had an operating voltage of 32 V at release/press/2010/100225/index.html
Double barrier increases MOSFET mobility Scientists from the University of Texas at structure, which has channel electrons channel devices [with a length of 20 μm], Austin have broken the channel mobility provided by a silicon δ-doping layer, rather where short channel effects are not a record for an inversion-type/accumulation- than a gate bias. However, realizing this problem.” type III-V MOSFET. higher mobility comes at the expense of fabricating a more complicated structure, The team now plans to work on devices with The key to realizing a mobility of 4729 according to team-member Jack Lee. new channel layers, such as InAs, which cm2/Vs was the addition of an promise even higher mobility. “We will also InP/In0.52Al0.48As barrier on top of the The University of Texas researchers could measure effective channel mobility for III-V transistor. This addition reduces the chance further increase the channel mobility of their MOSFETs at different temperatures, and of electrons spilling over from the channel to devices by increasing the thickness of their find scattering mechanisms that influence the barrier, where mobility is compromised. InP layer in the barrier beyond 5 nm.“But we channel mobility,” says Lee. have not tried [this] because the short A higher mobility of 5500 cm2/Vs has been channel effect would be much more severe,” H. Zhao et al. Appl. Phys. Lett. 96 102101 reported in an III-V MOSHEMTs-like says Lee. “ In our work we used long (2010)
50 www.compoundsemiconductor.net April/May 2010 Corporate Partners v2 25/2/10 11:22 Page 43
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solution based on advanced mobile and IP Industry news technologies, the initial offering to the U.S. market will be at 700 MHz. The cooperation may eventually be expanded to worldwide Further open positions at LayTec markets and other frequencies. 2010-04-21 The joint solution will allegedly enhance Since January 2009 LayTec‘s staff increased interoperable voice, video and data by more than 20%, yet the company still communications within and between contunues growing. public safety agencies and help streamline operations, while reducing costs associated We offer open positions for an experimental with maintaining multiple non-interoperable physicist (R&D), a constructing engineer networks. (R&D), a service engineer (customer support), software developer, physicist (Bachelor of Sci.), “Communications is becoming the ‘oil‘ that software & system tester. For more information makes other industries run, providing new please visit www.laytec.de/ careers.html levels of efficiency and safety and delivering new applications and services that were impossible before,” commented Tom Burns, president of Alcatel-Lucent’s Enterprise Alcatel-Lucent and EADS team up to activities. “By combining our best-in-class provide advanced broadband solutions end-to-end broadband wireless solutions 2010-04-20 with EADS’ public safety applications and technologies, we will provide first responders The partnership will focus on developing and and public safety organizations new powerful providing powerful mobile solutions to the communication tools and services.” emergency services in the United States. Hervé Guillou, CEO of Defence & Alcatel-Lucent is a global supplier to mobile and Communications Systems in EADS Defence converged broadband networking applications & Security added “We are looking to propose and services while EADS Defence & Security mission-critical systems combining the specializes in providing systems solutions to strengths of our COR P25 radio system the armed forces and civil security worldwide. open architecture with the next generation of networks and applications in order to better It was yesterday announced that they had respond to customer requirements.” “We have signed an agreement intending to jointly found the best partner as Alcatel-Lucent is a develop and offer a powerful mobile solution leader in LTE and has a strong presence in based on the rising 4G standard called LTE North America” (Long Term Evolution). In addition, the public safety Project 251 (P25) standards will provide mission-critical communications to fire, police and ambulance departments. Solar firm Precision Flow Technologies to increase jobs to 385 The two companies will market the joint solution 2010-04-20 through either their existing sales channels or through service providers and systems The company have been subcontracted to integrators. produce SiC semi-conductor grade material to be used in U.S. military applications Through a fully integrated, end-to-end
April/May 2010 www.compoundsemiconductor.net 53 news digest ♦ compound semiconductor
Precision Flow Technologies, who design operates off the normal power supply which and manufacture ultra high purity process provides current to the load during operation. gas delivery systems, gas purge and In the event of normal power supply failure, the mixing systems used in the semiconductor battery provides backup power until the normal industry,will be subcontracted to produce SiC power supply is restored. semiconductor-grade material. Along with Precision Flow Technologies is one of 15 three other subcontractors, they have received companies in The Solar Energy Consortium, funding totaling $2.8 millionfrom Saratoga which Hinchey helped spearhead. County-based C9 Corporation.
The funding will be partly used for the company to build a 40,000-square-foot manufacturing Riber announces further orders for MBE kits facility at TechCity, which is in the process of in India and US 2010-04-20 being transformed into Hudson Valley’s first eco-friendly commercial and light industrial complex. The new R&D reactors will be employed in biosensor, solar cell and various GaAs based Hinchey, D-Hurley, U.S. representative said heterostructures employment by the Saugerties-based company is now expected to expand by 190 from 185 to French based firm Riber, a manufacturer about 375. Furthermore, an additional 31 jobs of MBE systems providing globally to the are expected for construction of facilities for the compound semiconductor industry, has company at TechCity. announced two orders for reactors which will be used in research and development. Company president, Kevin Brady said in December that Precision Flow could EPIR Technologies, based in Illinois serves grow double to $200 million if the product the civilian and defense sectors and when development is successful. formed in 1998, focused on developing infrared materials for the US military. Since then, it “If you look beyond the military application, the has expanded its repertoire and the latest commercial opportunities could literally double MBE32 reactor acquisition should meet the the size of the company if you hit the timing requirements of its latest developments which correctly,” he said. include biosensors and PV solar cells.
The military applications being addressed Having successfully demonstrated a novel include increasing battery life for powering scheme for detecting biological warfare agents hand-held and back-pack devices for troops, in HVAC systems, EPIR is currently in the recharging unmanned reconnaissance process of prototyping the sensors based on platforms, and development of hybrid vehicles. this technology.
The company is also working with Sunovia One of the benefits of solar panels used in these type of applications is that the battery Energy Technologies to produce low-cost, high- is constantly in a state of ‘float charging’, efficiency multijunction solar cells, modules and which is most commonly used for backup systems for space, commercial and residential and emergency power applications where the applications. discharge of the battery is infrequent. An additional order for an EPINEAT research system has been received from an Indian In the float charging state, the charger, battery and load are connected in parallel. The charger research institution. The EPINEAT system
54 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest will enable the laboratory to expand its Up to now, the firm has focused its efforts on development capacities for the design of GaAs designing breakthroughs in ballast circuitry for based III-V systems, such as lasers, power electronic ballasts to manufacturers. electronics and RF communications.
The MBE system is optimized for GaAs EPC introduces Demo Board Using processing and has advantages over MOCVD Enhancement Mode GaN Transistors growth due to the ultra-high vacuum (which 2010-04-19 could in theory improve cleanliness and hence reduce impurities) and the lower growth EPC9002 contains two GaN transistors and temperatures required. all critical components needed for optimal switching performance This order strengthens Riber’s position in the Far East market which is currently the fastest EPC, the first company to produce Gallium- growing region in the semiconductor industry. Nitride-on-Silicon transistors as power MOSFET replacements in all forms of computer, cell phones and flat-panel displays has unveiled the EPC9002. This development PureSpectrum enters LED market board will allegedly make it easier for 2010-04-19 developers to design with EPC1001 100V GaN Power Transistors. A new player has entered the LED market. With a 50 V maximum input voltage, 7 A PureSpectrum Lighting has entered the highly maximum output current, the EPC9002 board competitive light-emitting diode (LED) market has been designed to simplify the evaluation with its new product - the PAR38 process of the EPC1001 GaN power transistor. The Par38 can provide 30,000 hours of It includes all the critical components needed light output to the equivalent of a 75-watt for easy connection into any existing converter. incandescent bulb. It contains 42 LEDs and consumes approximately nine watts of power. The 2” x 1.5” board is priced at $95 and along with two EPC1001 GaN transistors in a “Our goal has always been to introduce half bridge configuration, it has gate drivers, products and technologies which are in demand an on board gate drive supply and various now and viable in the long term and we cannot probe points to facilitate simple waveform ignore the energy and cost savings offered by measurement and efficiency calculation. LED products for niche markets,” commented company director of product development Originally, GaN-on-silicon transistors were Garth Kullman. depletion-mode types in that they required a negative voltage to turn them off. However, the The product is to go on display at both the ideal mode for board designers would be to use National Hardware Show and LightFair transistors like today’s silicon-only MOSFETs International, which are taking place in Las which are usually non-conducting and require a Vegas, Nevada in May. positive voltage to turn them on.
PureSpectrum was founded in Savannah, A breakthrough made by EPC using standard Georgia in 2006 and is a developer of new MOS processing equipment has now enabled lighting technologies which it hopes will become device-grade GaN to be grown on a silicon the cornerstones of energy-efficient illumination substrate to produce enhancement-mode FETs in the future. which have a similar fundamental operating
April/May 2010 www.compoundsemiconductor.net 55 news digest ♦ compound semiconductor mechanism to silicon-only MOSFETs. Philips Lumileds was set up in the late 1990s and has since become one of the foremost GaN-on-silicon transistors, which have suppliers of solid-state lighting in the world. a comparable cost to their silicon-only counterparts, however, offer superior It manufactures and sells billions of LEDs performance compared with silicon and SiC. annually and is actively involved in the They have lower resistance and the low development of new LED technologies and temperature coefficient and exceptionally high research into further improving the energy electron mobility enable GaN devices to handle efficiency of these products. very high switching speeds.
The system also offers self-isolation enabling Smart Grids to utilise GaN efficient monolithic power ICs to be fabricated 2010-04-16 economically and the transistor blocking- voltage may be customized as the distance GaN compound semiconductors will be integral between the drain and gate in a GaN transistor to the development of new technologies is proportional to the blocking-voltage. The development of next-generation Smart Grids will utilise a range of new materials, including superconductors, carbon nanotubes Philips Lumileds supplies LEDs for China and gallium nitride (GaN), it has been stated. highway project 2010-04-16 A report by Nanomarkets has outlined the importance of these technologies over the Two tunnels have been completed in China that coming decade in the development of new utilise Philips Lumileds LEDs for illumination. types of cable, power electronics, cable insulators, cable dielectrics and energy storage A new tunnel lighting project in China devices. is to utilise light-emitting diodes (LEDs) manufactured by Philips Lumileds in a bid to In fact, the report claimed the focus on these reduce energy consumption by up to 60 per technologies will mean there is likely to be cent. unparalleled demand for GaN and other compound semiconductor materials as the Chinese tunnel developer Xi’an Liming has market matures. worked with Future Lighting Solutions - a distribution partner of Philips - to furnish two The report stated: “These advanced materials new highway tunnels in the Xinkailing and will promote new grid architectures in addition Wangzhuyuan No 2 tunnels of the Liu’an-to- to enhancing power system control and Wuhan highway. reliability, reducing costs, and improving power quality and equipment lifespan.” In total, the project has used 3,900 LUXEON Rebel LEDs from Philips Lumileds. Elsewhere, Ann Mutschler recently argued in a blog post for Chip Design Mag that the low- “Future’s help in designing and optimising these power benefits of GaN and other compound tunnel fixtures was instrumental in our ability to semiconductors in chip design means that this both meet and exceed the national standards will be another area where demand is likely to for this kind of lamp and thereby win the lighting be strong for the foreseeable future. contract for these two tunnels,” said Yijing Mu, general manager of Xi’an Liming.
56 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Philips Lumileds extends Future partnership materials such as glass. The development of 2010-04-15 flexible, organic light-emitting diodes, which Philips Lumileds has announced a continuation can be manufactured on an industrial scale, of its partnership with Future Lighting Solutions. promises economies of scale and accordingly broader marketing of the environmentally Future has enjoyed a ten-year collaboration sound and highly efficient devices. with Philips as an exclusive distribution partner and this announcement further strengthens the Scientists from two renowned Fraunhofer relationship between the two firms. Institutes from Dresden (Germany) assembled flexible, large-area organic light-emitting diodes As such, the company is to become a direct with barrier layer systems which are necessary supplier of basic LED light engine components for long device lifetimes. The Fraunhofer under the Philips LED licensing programme. Institute for Photonic Microsystems IPMS and the Fraunhofer Institute for Electron Beam “This exciting expansion of our relationship and Plasma Technology FEP for the first time will allow Philips and Future to enhance our manufactured a flexible OLED in a roll-to-roll offer to the OEM market, serving existing and production and encapsulated the device in new customers with a broader portfolio of LED a subsequent inline-process. This process lighting solutions and services,” commented design would allow the production in a single Rudy Provoost, chief executive officer of Philips plant. The steps were developed in the frame Lighting. of the project ROLLEX (roll-to-roll production of highly efficient light-emitting diodes on Elsewhere, Future was recently awarded the flexible substrates, support codes 13N8858 Industry Leadership prize in LED Journal’s and 13N8857), funded by the German federal annual Innova Awards. ministry of education and research (BMBF).
It achieved recognition from the publication Professor Karl Leo, director of the Fraunhofer for its SSL Designer tool, having previously IPMS, confirms: “The successful assembly won the award in 2008 for its QLED Thermal of an OLED in a roll-to-roll process means a Design and Simulation software - making this breakthrough on the way to highly efficient and the second year in a row that the company has competitive devices. The achievement of this taken home this accolade. project proves the capacity of Dresden as a focal point for research in organic electronics.”
Flexible OLEDs from Fraunhofer A major component of flexible organic LEDs is 2010-04-19 the homogenous encapsulation of luminescent layers with transparent barrier layer systems. Low-cost, energy efficient lighting becomes Permeation of only small amounts of humidity tangible thanks to barrier coating systems or oxygen shortens the lifetime of the devices for flexible OLEDs developed by Fraunhofer drastically, which explains the strong need for researchers barrier systems protecting the luminescent materials on a large area without defects. Organic light-emitting diodes (OLEDs) are However, the barrier layers should not absorb nowadays synonymous with next generation the emitted light and should not interfere with lighting, which could replace common light- the colours of the light. bulbs in a couple of years. They convert electricity very efficiently into light of high The researchers of the Fraunhofer Institutes quality. However, existing OLEDs on the deposited OLED materials on a cheap market are costly and mostly deposited on rigid aluminium foil in a roll-to-roll pilot plant, further
April/May 2010 www.compoundsemiconductor.net 57 news digest ♦ compound semiconductor encapsulated the luminescent foil with a barrier Watch out for the Imaging Revolution in the layer system, patented by the Fraunhofer FEP, Military without compromising its luminosity. 2010-04-15
Dr. Christian May, head of the business Cameras for use in all environments and unit, Organic Materials and Systems at lighting conditions exhibited at SPIE conference the Fraunhofer IPMS, is pleased about the promising project: “Developing the flexible The SPIE Defense, Security and Sensing OLED, experience from both institutes have symposium is one of the leading conferences been united in an optimal way. I am avid for showcasing optoelectronic and electronic that we integrated the effective barrier layer equipment used in the military sector. Based in systems developed from the Fraunhofer FEP into the OLED-technology of the Fraunhofer Orlando, Florida between April 5 and 9th 2010, IPMS.” the latest technologies and applications in infrared, sensors, image analysis and devices Dr. Nicolas Schiller, head of the business unit were presented. Coating of Flexible Products at the Fraunhofer FEP adds: “The coating processes are all Spire Semiconductor uses its MOCVD growth done in a roll-to-roll modus with a continuously facility to produce 50mm to 100mm GaAs and moved substrate which opens up strong InP based epitaxial wafers and works with its potential to reduce costs.” customers to design and fabricate VCSELs, LEDs, photodetectors and modulators. General The technology developed by the two Manager of Spire Semiconductor, Mr. Edward Fraunhofer Institutes marks a milestone on Gagnon was at the show where high-efficiency the way towards an industrial manufacturing GaAs solar cells, were exhibited. of flexible OLEDs. Besides OLEDs, also other devices, such as organic solar cells or memory French company Sofradir demonstrated their systems, could be realized in intermediate Scorpio Focal Planar Array (FPA) which utilises terms. The work is going to be continued by the a 15mm pitch longwavelength IR detector Dresden Institutes in a bigger consortium. (LWIR) featuring video imaging. The smaller the pixel pitch, the greater the detectors spatial resolution. A combination of small pitch and longwavelength makes new system architectures available to defense and security equipment makers.
Demonstration Scorpio MWIR detector housing IR chip with integrated optics from Sofradir and Onera
58 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Problems with blooming (where one pixel Belgian firm Xenics, who design and has too much illumination which overflows manufacture IR detectors and cameras from into a neighboring pixel) have already been 400 to 14000nm in both linescan and 2-D mode successfully tackled by Sofradir in the presented its latest product the Onca-MWIR- mid-wavelength range and they have now InSb. improvised the mature technology to eliminate the problem in the long wavelength region. With real-time image correction this camera uses a 2-D InSb array with 320 x 256 or 640 x Furthermore, the operating temperature of 512 pixel resolution. Like the Rice NIR600, it 100K is greater than the industry standard of has a 14-bit image and offers both a standard 80K resulting in an enhanced cooler reliability and high speed video rate. The Onca-MWIR- and longer autonomy for battery operated InSb is optimized for highly stable stand equipment. alone and PC-driven thermal imaging and thermography applications. Sensors Unlimited unveiled their new InGaAs based SU320HX shortwavelength IR (SWIR) Papers presented at the conference include video camera designed for use in haze, fog, a collaboration between Magnolia Optical smoke, and dust and throughout all hours of Technologies and Kopin demonstrating that the day and night. Again, it is suited to military using InGaAs quantum wells of varying surveillance applications as well as marine thickness and composition can provide high intelligence tasks and is backward compatible efficiency solar cells. They also presented a with its predecessor the KT. paper based on InN- based quantum dot solar cells. Advantages of nitride semiconductors The camera is claimed to be lighter, smaller in solar cells over other materials are the and more energy efficient than its cooled mid- large range of energy gaps, superior radiation wave, long-wave IR and germanium-based IR resistance, and tolerance to high temperatures. competitors.
Recently, Sensors Unlimited’s cameras were JEDEC Announces 25th Annual Reliability used on NASA’s LCROSS mission to detect of Compound Semiconductors (ROCS) moisture on the moon. Workshop is Moving to Mantech 2010-04-15 RiceCamera Technologies, who have recently entered into partnership with SVS-Vistek, JEDEC Solid State Technology Association specializes in short and long wavelength IR announces that the 25th annual ROCS thermal cameras. These are mainly used in Workshop will now be held one day before the robotics equipment and automated inspection MANTECH Conference systems. What: JEDEC Solid State Technology They exhibited their latest product, the NIR600 Association, the global leader in the NIR-SWIR VDS camera which features an development of standards for the InGaAs sensor which has a spectral response microelectronics industry, announces that the from 900nm to 1700nm. With a resolution of 25th annual ROCS Workshop will now be held 320 x 256 it offers speeds of up to 100fps and one day before the MANTECH Conference, sensitivity beyond 1 micron. The scientific with the objective of bringing together grade camera with ‘NIR Perfection’ can be researchers, manufacturers and users of used in multiple applications including machine compound semiconductor devices. vision and military imaging. ROCS will highlight papers presenting the latest
April/May 2010 www.compoundsemiconductor.net 59 news digest ♦ compound semiconductor results and new developments in all phases of manager of NanoGaN, is to be a keynote compound semiconductor reliability, which will speaker at the event and will highlight the be presented in four sessions by authors from growing demand for high-purity, low-defect groups in the US, Europe and Asia. gallium nitride substrates with which high- efficiency compound semiconductors can be ROCS 2010 will offer a special focus on the manufactured. reliability of Gallium Nitride (GaN) devices, which are drawing increasing attention due to Dr Humphreys said: “We are keen to create their usefulness in a wide range of applications, awareness of new materials which will from solar and LEDs to RF and diode devices. revolutionise the lighting industry once they Ample time for discussion and questions is enter mainstream production. The use of these planned. materials offers the potential to significantly reduce energy consumption and carbon When: Monday, May 17, 2010 - onsite emissions.” registration starts at 7:30AM The conference is an annual event which Early bird pre-registration discounts end May 3, each year provides a forum for businesses 2010 to showcase the latest trends within the semiconductor sector. Where:Portland Marriott Downtown Waterfront
For complete program information and Philips unveils LED bulb to replace 60-watt registration, visit: traditional bulb 2010-04-14 http://www.jedec.org/home/gaas/preregister. htm Philips dimmable bulb will operate at 12-watts enabling energy savings of up to 80%
Philips, one of whose specialties is in energy S2K event to highlight compound efficient lighting solutions and new lighting semiconductor importance applications announces it new 60 watt- 2010-04-14 equivalent LED replacement bulb. The product will be launched by the end of 2010 and deliver An annual conference is showcasing the an industry benchmark of 806 lumens of warm importance of compound semiconductor white light. technology. For businesses such as hotels who replace An event being held in Cardiff on June high concentrations of 60 watt lamps, the 1st and 2nd will highlight the importance Philips’ LED solution could save up to €20 per of new technologies such as compound lamp per year due to the 25,000-hour lifetime. semiconductors in improving energy efficiency. New U.S. lighting legislation preventing the The S2K 2010 conference is this year being manufacture of incandescent bulbs will come chaired by Ravi Silva, professor of solid- into force from 2012. The manufacture of the state electronics, director of the Advanced traditional light bulb (which can emit as much Technology Institute at the University of Surrey as 90% of its energy as heat) will become and head of the Nano-Electronics Centre. obsolete as of January 2014.
However, Bedwyr Humphreys, general Light + Building is providing Philips with a
60 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest platform to launch additions to its portfolio silicon photonics circuits in CMOS foundries. of LED lighting solutions for consumer and WADIMOS is an EU-funded research project professional applications and include: to demonstrate a photonic interconnect layer on CMOS. Leti’s partners in the project, * LivingAmbiance – a remote controlled which is coordinated by Imec, include integration system where multiple light sources STMicroelectronics, MAPPER Lithography, in the home can be customized to set ambient Lyon Institute of Nanotechnology (ILN) and the lighting to match any mood. University of Trento.
* The Lirio - collections of sophisticated Working with a circuit design from INL and consumer luminaires to match modern interiors Imec, Leti completed the specific process possessing bold new forms, materials and studies for the laser source to adapt and modify finishes. The collections would be designed in standard III-V materials process steps that conjunction with Philips, Arcitone and Ledino. would comply with a CMOS environment. Leti replaced gold-based metal contacts with a Ti/ * LED luminaire and control solutions for offices TiN/AlCu metal stack.WADIMOS partners at and shops which are aimed at improving SPIE Photonics Europe 2010 in Brussels will road and pedestrian safety, reduce night-time present the results, April 12-16. light disturbance and make significant energy savings. The enormous computing power of multi- processor systems and manufacturing tools “Philips recognizes and understands the being considered will require data transfer fundamental changes taking place in the rates of more than 100Terabit/s. These data world today,” says Rudy Provoost, CEO of rates may be needed on-chip, e.g. in multi- Philips Lighting and a member of the board core processors, which are expected to require of management of Royal Philips Electronics. total on-chip data rates of up to 100TB/s “Lifestyles are changing, urbanization is by 2015, or off-chip, e.g. in short-distance presenting new challenges for city leaders, data interconnects, requiring up to 100TB/s and society in general is more environmentally over a distance of 10-100 meters. Optical aware. We are applying the functional and interconnects are the only viable technology for creative potential of LED lighting to address transmitting these amounts of these trends, and to simply enhance life with data. light.” Besides a huge data rate, optical interconnects With Philips, GEC and Cree and many others also allow for additional flexibility through the in the helm, it will be interesting to see who use of wavelength division multiplexing. This comes out on top in the LED revolution … feature may be help realize more intelligent interconnect systems such as the optical network-on-chip system that the WADIMOS project also is studying. Leti shows off new CMOS laser 2010-04-14 WADIMOS, which is an abbreviation for Wavelength Division Multiplexed Photonic Leti demonstrates CMOS-compatible laser Layer on CMOS, will build a complex photonic source coupled to a silicon waveguide interconnect layer incorporating multi-channel Leti has announced that it has demonstrated a microsources, microdetectors and different fully CMOS-compatible laser source coupled to advanced wavelength routing functions directly a silicon waveguide, a major milestone toward integrated with electronic driver circuits. It also the WADIMOS project’s goal of fabricating will demonstrate the application of the electro-
April/May 2010 www.compoundsemiconductor.net 61 news digest ♦ compound semiconductor photonic ICs in an on-chip optical network and lighting into homes.” a terabit optical datalink. OLED Lighting: A review of the patent landscape report is an invaluable guide to OLED lighting patent filings see explosive technology developers, patent departments, growth since 2000 licensing departments, and business 2010-04-14 developers who want to develop technology and patent strategies. It will help to understand Growth coincides with increasing Government how the OLED lighting industry is developing funding of OLED lighting with respect to patents. Readers of the report will be able to determine the technology OLED lighting patents filings are growing space, identify the number of patents being rapidly with more than 90% of filings appearing filed, by who, and when. It will also outline the since 2000 according to the latest OLED application space. Lighting: A review of the patent landscape report from cintelliq Limited, a leading provider More than 1,800 published (EP, JP, US, of information services and technology and WO) and granted patents (EP and US) consulting to the organic semiconductor and assigned to more than 200 commercial and organic electronics industries. This recent study academic organisations were included in the identifies more than 1,800 patents focused on analysis to produce OLED Lighting: A review of white OLED for lighting applications. the patent landscape report
According to the company’s OLED Lighting: Organisations in this report inlcude; GE, A reciew of the patent landscape report, the Osram, Philips, Panasonic, Samsung, LG traditional lighting companies account for 22% Display, Toshiba, Sony, CDT, UDC, Novaled, of the patents filed, closely followed by imaging/ Kodak, Konica Minolta, Fuji Photo Film, optics companies, and OLED technology Cambridge University, Princeton University, providers. Yamagata University, Technische Universität Dresden and many more. Analysing the patents filed show six main innovation clusters, device structures, materials, applications, outcoupling, manufacturing, ancillary with the top three accounting for 67% of the patents. Several organisations for example Kodak and Konica Minolta are present in the top three of more than one cluster.
“This report is the first of its kind to clearly identify in details the filing strategies of the leading OLED lighting developers. This report is an essential resource for developing a company’s technology development and roadmap”, said Craig Cruickshank, lead Atlumin & MCP join forces to enable faster analyst cintelliq Limited. Craig added, “Looking production of specialty materials 2010-04-14 forward, the explosive growth in OLED lighting patents is set to continue over the next 5 years. Expansion of development capability and Government funding, Government legislation manufacturing capacity are the primary goals and commercialisation will help drive OLED
62 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest the integration class manufacturing on a global basis. The Atlumin, a global provider of materials used in complementary synergies will substantially renewable energy such as solar modules and increase our business scale and expand our MCP, a major supplier of advanced materials customer base. This is another step in our primarily made from indium, gallium, selenium strategy to compress the material supply chain and tellurium have integrated to form Atlumin and offer increased system level efficiency Energy. to our customers, thereby helping them to be more competitive.” The new group will focus on manufacturing materials including those found in the compound semiconductor industry and will Avago has a go at transforming lighting with continue with the advanced recycling and miniature 3-Watt LED reclaim programs that both MCP and Atlumin 2010-04-14 are credited with. Energy efficient with 140 degree viewing angle The companies expect the integrated and high flux output, LED is suited to safety, operations to be leaner and faster and emergency and portable lighting provide customers with a more complete and streamlined solution. Avago manufactures a broad array of LED products and now introduces its compact high Atlumin will now operate under the new name brightness 3W ASMT-Jx32 which delivers a while the MCP brand name will be retained minimum output of 100 lumens (lm) at 350mA for existing products. Certain products and driving current. services will be manufactured at both Atlumin / MCP UK and Sunnyvale, California facilities. The InGaN based device available in blue and white (in cool, neutral and warm versions),is Laurent Raskin, CEO of MCP Group SA also suited to street and residential lighting commented, “We believe this is a powerful and is claimed to provide good color uniformity. strategic combination. Adding Atlumin Each device is priced at $2.50 in 1,000 piece leadership and supporting additional investment quantities and is available now. in Wellingborough accelerates and broadens With a footprint of only 5 mm by 4 mm and the MCP Wellingborough value proposition.” at 1.85 mm thick, Avago claims tests have demonstrated a lifetime of 50,000 hours. The “By leveraging the diversified operations and emitter is designed to handle high thermal employee skill sets of both organizations, this and high drive currents of up to 700 mA combined company is well positioned in a and features a maximum allowable junction marketplace full of opportunities. Under the temperature of 135 degrees-C to provide leadership of Gregory Phipps, we are confident greater lighting design flexibility. the integration of our businesses will create tremendous value for our customers and The LED has a high Electrostatic Discharge provide opportunities for our employees. (ESD) resistance of 16 kV making special ESD protection equipment unnecessary to handle Gregory Phipps, President of Atlumin remarked, the part during installation. It is compatible with “through this integration, we’re creating a the standard SMT reflow soldering process world-class leader in specialty materials and and is encapsulated in a heat and UV resistant metals. By combining MCP Wellingborough’s silicone material. lean, high volume manufacturing platform with Atlumin’s innovative development and attentive Featuring a low thermal resistance of 9 account teams, the net result will be best-in- degree-C per Watt, the electrically neutral
April/May 2010 www.compoundsemiconductor.net 63 news digest ♦ compound semiconductor heat pad allows arrays to be connected on a and environmentally,” says Michael Petras, common heat sink, thus simplifying thermal president and CEO of GE Lighting. design and is also lead-free and RoHS compliant. The LED system operates at 29 watts per door, compared with an average of 73 watts with the existing fluorescent lamps, and Target will Target and GE join forces to produce LED see additional savings due to the integration refrigerated display cases of motion-activated occupancy sensors for the 2010-04-14 majority of the display cases.
Energy usage will be cut by 60% compared to fluorescent systems Cambrios and Ascent Announce In its bid to revolutionize the environmental collaboration on Solar Power 2010-04-13 impacts and energy usage of its products,
Minneapolis-based Target Corporation will Research targeted at applications of CIGS install over 55,000 doors incorporating GE solar cells to U.S. military applications high-performance LED units.
Ascent Solar Technologies is a developer of The freezer and cooler door cases will be flexible thin-film photovoltaic modules while installed in 500 stores nationwide. Cambrios uses nanotechnology to simplify
electronic materials manufacturing processes “Target strives to be a responsible steward and improve end-product performance. of the environment,” remarks Target Vice Ascent says it will investigate whether its President Tony Heredia. “We continue to find Copper-Indium-Gallium-Selenium (CIGS) ways we can increase energy efficiency and photovoltaics thin-film solar modules can be pilot new technologies. Efforts like these, used with Cambrios’ ClearOhm coatings. which help reduce one of our largest operating ClearOhm films produce a transparent, expenses, also curtail our impact on the conductive film by wet processing are alleged environment.” to have improved properties by comparison to
traditional transparent conductive oxides. Having already converted 150 stores in 2009,
Target intends to convert an additional 350 Although CIGS solar cells are not as efficient stores in 2010. The GE LED systems will as crystalline silicon solar cells they are be used in new and remodeled stores going expected to be substantially cheaper due to the forward. much lower material cost and potentially lower
fabrication cost. GE has sold more than 700,000 LED refrigerated display case lights since their Another advantage of CIGS over crystalline invention in 2006. Forty of the top 50 silicon is that they have a direct bandgap and U.S. grocers and supermarkets are using thus require much thinner layers to absorb the the solutions, as well as 19 of the top 25 same amount of light. convenience store chains.
“Ascent Solar has very high efficiency CIGS “Through this conversion to reliable GE- solar cells so they are the perfect partner for quality LED systems and through additional this program,” Cambrios Chief Executive Officer initiatives that we’re helping to execute, Target Michael Knapp said in a statement. is making great strides both operationally
64 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
“Unlike transparent conductive oxides GaN market ‘poised for growth’ typically used as thin-film solar cell electrodes, 2010-04-09 Cambrios’ ClearOhm material is also highly flexible. Together our companies have the GaN products could soon see a growing right technologies to provide the Army with demand for use in low-power applications. lightweight, flexible CIGS solar cells with better efficiency than what has been possible to date.” The market for gallium nitride (GaN) products could be set to take off in the months ahead due to an increasing demand for chips produced using this compound semiconductor. MTC announces SiC partnership with Sintec 2010-04-12 With applications in mobile handsets, wireless communications, servers and notebooks, GaN- Distribution partnership announced between based chips are likely to see a significant boost MTC and Sintec. in demand due to the low-power benefits they offer, Chip Design Mag reported in a recent Morgan Technical Ceramics (MTC) has blog by Ann Mutschler. announced a distribution partnership with Kennametal Sintec Keramik for its pyrolytic “The benefits of GaN in low power are density, boron nitride (PBN) and chemical vapour efficiency and cost. Ultimately, it gives you a distribution silicon carbide (SiC) materials. better trade-off for all three of those compared to silicon and the key is to make it below Each of these materials is used in the a certain cost threshold,” commented Tim development of compound semiconductors, McDonald, vice-president of the emerging with PBN particularly useful as it provides technologies group at International Rectifier. superior mechanical strength and thermal stability. Elsewhere, International Rectifier announced it has opened a new manufacturing facility in San The firm also noted that its SiC products Jose where it will be focusing on the production outperform conventional materials in hostile of GaN and silicon materials for use in space, chemical and plasma environments. aerospace, military and heavy-duty industrial applications. “We continually look at ways to improve our processes and by working with Sintec we will be able to shorten lead times, meaning WCDMA Handset Semiconductor Revenue customers will receive products sooner,” said Predicted to Exceed $30 Billion by 2014 Phil McGraw, general manager of MTC. 2010-04-09
MTC is a division of The Morgan Crucible Research and Markets announce the addition Company and specialises in the design, of the “Worldwide Cellular Phone Components manufacture and marketing of materials 5-Year Forecast” to its ‘Phone Component for use in a range of applications, such as Forecast’ telecommunications, fire protection and in medical instrumentation. The mobile phone started off as a practical and convenient communications device Formed in 2003, the company recently acquired but is now relied upon as a mini-computer. two UK businesses - Certech and Carpenter Wideband Code Division Multiple Access Advanced Ceramics. (WCDMA) is a standard found in 3G mobile telecommunications networks.
April/May 2010 www.compoundsemiconductor.net 65 news digest ♦ compound semiconductor
The recent success of smartphones and GE launches LED bulb to replace 40-watt wireless broadband has spurred phone incandescents by 2014 manufacturers to push ahead with their 4G 2010-04-09 plans. This is deemed necessary in order to meet the constantly increasing phone demand New bulb will last 17 years and consume only by consumers. This should in turn have a 9-watts while delivering nearly the same output positive effect on the compound semiconductor as current incandescent and halogen bulbs growth industry and impact the cost of GaAs based HBT chips. GE Appliances & Lighting which provides lighting to commercial, industrial and residential Research and Markets provide the latest data sectors has unveiled the Energy Smart LED on international and regional markets, key bulb which is designed to distribute light like an industries, the top companies, new products incandescent bulb. and the latest trends. The Phone Component Forecast is an Excel spreadsheet containing Providing energy savings of 77% over the 5-year forecasts (currently 2009 to 2014) for traditional 40-watt bulb, it will be available by handsets, handset revenues, and handset early 2011 and is expected to retail between semiconductor revenue by region and $40 to $50. The new product has been technology type. designed to provide better direct light in all directions and not just out of the top as most The data also includes handset semiconductor current LED bulbs are prone to do. revenue by its precise function and forecasts for Wi-Fi dual-mode phones, Bluetooth, GPS New U.S. lighting legislation preventing the and touchscreen phones, cameras, analog manufacture of traditional bulbs will come TV tuners and accelerometers in phones, and into force from 2012 and the table below phones with pico projectors. shows when the incandescents will have to be replaced. Predictions by Research and Markets are that LTE applications and multimedia processor Incandescent power | Cannot be made from revenue will exceed $400 million by 2014. Also the TD-SCDMA handset semiconductor 100-watt | January 2012 revenue in 2010 will increase more than five- fold compared with nascent 2009 levels. 75-watt | January 2013
In addition, the Latin America region is 60 and 40-watt | January 2014 expected to see the most significant growth in WCDMA handsets and exceed the Middle East The 40-watt incandescent LED replacement & Africa by 2011, and the North American and offers 450 lumens while currently available Eastern European regions by 2012. LED bulbs produce 350 lumens or less. Other advantages of LEDs over incandescent light Overall, handset semiconductor revenue is sources include improved robustness, smaller predicted to see a more moderate five-year size, faster switching, and greater durability compound annual growth rate of 2.1%, as and reliability. They are however relatively semiconductor revenue for CDMA and GSM expensive and require more precise current handsets declines throughout the forecast and heat management than traditional light period, according to market research firm In- sources. Stat. “This is a bulb that can virtually light your kid’s bedroom desk lamp from birth through high
66 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest school graduation,” says John Strainic, global strong growth for the last five years, and product general manager, GE Lighting. offer a best-in-class portfolio of products,” said Harwood. “The opening of Inphi UK He added “Consumers have been reluctant to demonstrates the company’s commitment to move away from less efficient incandescent becoming a global technology leader, investing bulbs because they love the light quality. This in key talent and customers worldwide.” new GE Energy Smart LED bulb will address that lighting preference head-on and give Young Sohn, President and CEO at Inphi consumers yet another option to light their stated “Establishing our UK center allows us homes and businesses.” to capitalize on the area’s enormous cache of talent and knowledge. This move will form the next step in our worldwide growth Inphi opens UK office to speed 100 Gbit/s and augments our leadership in innovative interfaces designs, dedication to excellence in product 2010-04-08 development, and commitment to advancing industry standards.” New R & D centre to help seal Inphi’s reputation as global technology leader Inphi helps solve bandwidth, capacity and LED Linear Tube Lamps power issues faced by data centers and 40 2010-04-07 Gbps/100 Gbps networks. Global Market Forecast & Analysis The Californian-headquartered firm produces products for the server and storage, networking ElectroniCast Consultants, a market research and communications sectors and it is credited consultancy, have announced the release of a with devising the first DDR3-1600 Memory new market review and forecast of the global Interface Buffer. consumption of light emitting diode (LED) linear tube lamps, which are used in new Providing globally to over 200 manufacturers in construction, retrofitting of existing (installed- memory modules, transponders and telecoms, based) and as a replacement for fluorescent its wide product range includes those based linear lamps (tubes). on a number of compound semiconductors including InP and GaAs. This report provides an independent examination and analysis of the changing The new R & D team based in Preston market dynamics for two major types of LED- Deanery, Northants, aims to create a new based linear tube lamps, segmented by length class of high-speed interface device to be (less than 4 feet and 4 feet or longer) and by used in advanced analog circuit design in technology: 100 Gbps networks. Director of Inphi United Kingdom, Mike Harwood has 20 years of · DIP LED Linear Tube Lamps experience in microelectronics design with · SMD LED Linear Tube Lamps HSZ Consulting and Texas Instruments. He hopes to aid innovation in signal integrity, In terms of volume (the number of units), the power management, packaging and process worldwide use of LED linear tube lamps will technologies. increase at a dramatic average annual growth rate of 85 percent (2009-2016). Last year, “I’m excited to join Inphi at this stage of its 19 percent of LED linear tubes were SMD- business. They’ve had a positive track record, based LED tubes 120cm or longer; SMD LED
April/May 2010 www.compoundsemiconductor.net 67 news digest ♦ compound semiconductor tube lamps (less than 120cm) represented 11 percent of the global volume; The shorter “Therefore, the timeframe of 2009-2016 will length (less than 120cm) DIP tube lamps held be the launching pad for this particular LED 20 percent of the relative market share and the lamp. The worldwide LED linear tube lamp market leader was the longer LED DIP linear marketplace is forecasted to increase in tube lamps (see Figure 1). consumption value (in dollars) at an average annual growth rate of nearly 71 percent,” The global market is segmented into the Montgomery added. following major application categories: This 400-page market forecast report is · Government Interior Lighting available immediately, at a fee of $3,800, from ElectroniCast Consultants. For detailed · Government Exterior Lighting information on this or other services provided · Commercial/Industrial Lighting by ElectroniCast, please contact Theresa Hosking, Marketing/Sales; thosking@ · Professional Display & Signage electronicastconsultants.com
· Mass-Transit and Other Vehicles
· Residential
According to ElectroniCast Consultants, the automatic assembly and test manufacturing process for the surface mounted device (SMD) light emitting diode linear tube lamps allows for mass-production capability. In addition, over the next few years, the average selling prices of the LED linear tube lamps will be driven lower, as a result of production efficiencies, yield-number improvements (aided by quality controls), competition (both market competition and technological competition), marketing/sales distribution improvements, and other factors.
“Over the next 7-years, it will become apparent Optoelectronics, Sensors, and Discretes to that it will take less LEDs per lamp to provide Hit Record Sales in 2010 more brightness, at a lower average selling 2010-04-07 price per lamp,” said Stephen Montgomery, president of International business at After amazing turnaround in 2009, the O-S-D ElectroniCast. markets will outpace ICs the next five years
“During the forecast period (2009-2016), as the After a horrific first quarter in 2009, use of the component-level bulbs increase, as semiconductor sales of optoelectronics and the competition intensifies, as the consumer sensor devices staged dramatic turnarounds awareness increases, as the automatic test and finished the entire year with declines of and assembly (the manufacturing processes) just 5% and 2%, respectively, from record- of the piece-parts and higher-level components high revenues recorded in 2008, according improves, the road will be paved for lower price to IC Insights’ newly completed 2010 LEDs with a higher lumen/W rating to be use in Optoelectronics, Sensors, and Discretes the LED linear tube lamp.”
68 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
(O-S-D) Report. Recoveries in discrete networks, notebook PCs, cellphones, industrial semiconductors and actuator devices were and medical equipment, and automotive also impressive in the final three quarters of systems, according to the latest edition of the last year, but those market segments still fell by annual O-S-D Report. During the 2009-2014 16% and 12%, respectively, in 2009. forecast period, combined O-S-D sales are expected to increase at a compound annual Based on detailed market analysis in the new growth rate (CAGR) of about 13% compared 300-page O-S-D Report, strong recovery to the projected 12% CAGR for IC sales in the momentum is expected to continue in 2010 same five-year timeframe. with optoelectronics, sensors/actuators, and discretes markets all reaching new record-high Higher growth rates for MEMS-based revenues this year. The 2010 O-S-D Report accelerometers, gyroscope devices, actuators, shows optoelectronics sales increasing 27% to pressure sensors, high-brightness LEDs, $23.3 billion, sensor/actuator revenues climbing CMOS image sensors, and optical-network 33% to $6.8 billion, and discretes growing 29% laser transmitters are expected to lift O-S-D to $19.7 billion this year. Within the sensors/ sales by a greater annual percentage than actuators market segment, sales of devices overall IC sales in the next five years. The made with microelectromechanical systems new report shows O-S-D revenues accounting (MEMS) technology are forecast to grow 34% for 17% of the projected $419 billion to $5.6 billion in 2010 after declining 5% in semiconductor total in 2014 compared to 16% 2009 to $4.2 billion. of $238 billion in 2009.
The dramatic turnaround in 2009 was mostly driven by replenishment of semiconductor inventories at systems manufacturers once their markets stabilized following the sharp falloff in product demand that occurred in the depth of the 2008-2009 economic recession. In practically all O-S-D product categories, sequential quarterly sales growth rebounded in 2Q09 by 20-40% from economically depressed levels in 1Q09. Those increases continued through the rest of the year, turning 2009 into a modest setback for optoelectronics and the sensor/actuator markets. However, the discretes market segment—including power Figure 1 Report Details The 2010 edition transistors—faced a greater uphill climb out of of the O-S-D Report continues to expand the early slump in 2009 and finished the year IC Insights’ coverage of the semiconductor with a decline of 16%—its second worst drop in industry with detailed analysis of trends and 25 years behind the 25% plunge suffered in the growth rates in the optoelectronics, sensors/ 2001 semiconductor recession. First-quarter actuators, and discretes market segments. sales slumps, overall 2009 performance, The 300-page 2010 report (with 220 charts and the 2010 forecast for the O-S-D market and figures) is available for $2,485 in either a segments are compared in Figure 1. three-ring binder or CD-ROM format. Additional In 2010, strong sales growth in optoelectronics, individual copies of the CD-ROM or binder sensors/actuators, and discretes will be driven sell for $495 each. The report is also available by the ongoing recovery in demand for portable under a multi-user corporate license for $5,885. electronics, consumer products, high-speed For more information, please visit www. icinsights.com/prodsrvs/osdreport/.
April/May 2010 www.compoundsemiconductor.net 69 news digest ♦ compound semiconductor
RFMD(R) Ranks No. 1 in Global Ranking of with the world’s top-tier mobile device Mobile Phone Power Amplifiers and Front manufacturers and cellular platform providers.” End Modules 2010-04-06 RFMD is capitalizing on major global secular growth trends and continues to enjoy strength RF Micro Devices, Inc announced today that in CPG, supported by strong 2010 handset Gartner Dataquest has recognized RFMD unit volumes, expanded participation across as the worldwide leading supplier of mobile customer and channel partner programs and phone power amplifiers and front end modules, increasing adoption of connected devices, based on revenue, and the worldwide leading including smart phones and 3G devices. supplier of mobile phone RF devices, based on Additionally, RFMD’s Multi-Market Products revenue, for 2009. Group (MPG) is seeing a broad-based recovery across its diversified end-markets, led by RF Micro Devices, Inc. (Nasdaq:RFMD), a applications in SmartEnergy AMI, Defense and global leader in the design and manufacture of Power, Point-to-Point Backhaul, WiMAX/WiFi high-performance radio frequency components CPE, Electronic Toll Collection in China, and and compound semiconductor technologies, Catalog/Standard products. announced today that Gartner Dataquest has recognized RFMD as the worldwide leading supplier of mobile phone power amplifiers and CIGS - Efficiences near 16% front end modules, based on revenue, and the 2010-04-07 worldwide leading supplier of mobile phone RF Achievement of the World’s Highest devices, based on revenue, for 2009. Photovoltaic Energy Conversion Efficiency as According to the March 29, 2010 report, a Flexible CIGS Solar Cell Submodule - Slim “Market Share Analysis: Mobile Phone and highly efficient integrated-type solar cell module is realized without grid electrodes on Application-Specific Semiconductors, Worldwide, 2009,” RFMD maintained its the surface number one position in both categories. Also in the report, Gartner Dataquest identified RFMD Shigeru Niki (Leader; concurrently, Deputy as the world’s 8th largest supplier of overall Director of Research Center for Photovoltaics), mobile phone Shogo Ishizuka (Research Scientist) et al., application-specific semiconductors in 2009, of the Thin Film Compound Semiconductor based on revenue. RFMD’s 2009 revenue Team, Research Center for Photovoltaics in the category increased to $712 million, (Director: Michio Kondo), the National Institute according to Gartner Dataquest, highlighting of Advanced Industrial Science and Technology RFMD as one of only four companies in (AIST; President: Tamotsu Nomakuchi) have Gartner Dataquest’s report to achieve year- demonstrated the world’s highest photovoltaic over-year growth in this category. energy conversion efficiency among monolithically integrated flexible solar cell Eric Creviston, President of RFMD’s Cellular submodules (independently certified efficiency) Products Group (CPG), said, “We believe of 15.9 % (aperture area: 75.7 cm2) using a Gartner Dataquest’s independent research CIGS thin film (a solar cell material). findings highlight RFMD’s product leadership and the continued success of our customer Lightweight and flexible solar cells are attracting attention as a key technology for diversification efforts. We are committed to wider use of photovoltaic power generation; we expanding our leadership position in cellular can expect wider applications because they RF components by delivering breakthrough can be installed even at locations where current products and leveraging our relationships
70 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest solar cell panel modules cannot be installed. Greenbelt, Maryland, has taken delivery of an astronomy instrument which uses silicon However, it was extremely difficult to obtain carbide to allow it to be light enough to fly photovoltaic energy conversion efficiency onboard the James Webb Space Telescope. higher than 10 % in a flexible solar cell module of an integrated structure. The Near-Infrared multi-object Spectrograph, We have worked on the technical challenges or NIRSpec, uses advanced ceramics based of alkali addition control and integration on silicon carbide in both its optics and its wider processes, and succeeded in drastically structure. enhancing the photovoltaic energy conversion NASA explains that this helps to keep the efficiency of an integrated-type flexible CIGS solar cell using a submodule-size substrate of weight of the device down, while allowing it the practical use level. to be one of the most advanced astronomical instruments ever created. The result of this study will be published in the 57th Spring Meeting, 2010, of The Japan Operating at a temperature of 40 K (-233 Society of Applied Physics, to be held at degrees C), each microshutter on the NIRSpec Shonan Campus, Tokai University, on March must work over a lifecycle of around 100,000 17–20, 2010, and in the 35th IEEE Photovoltaic open-close sequences. Specialists Conference to be held in Hawaii, USA, on June 20–25, 2010. In all, 250,000 shutters complete the design of the telescope, called Webb for short, with each measuring approximately the thickness of a human hair.
This allows 100 different objects in the sky to be observed at once, each for the necessary duration to allow enough faint light from the origins of the universe to be collected in order for analysis to be conducted successfully.
Power Electronics Japan Forum 2010 from Silicon to SiC and GaN Integrated-type flexible CIGS solar cell 2010-04-01 modules and lighting LEDs powered by them Yole Développement and its Japanese partner, Global Information, present the Power Electronics Japan Forum, on June 1&2, 2010. Silicon carbide used in advanced astronomy instrument Power electronics are currently facing a huge 2010-04-01 transition as the demand for efficient power
conversion systems is increasing along with Silicon carbide plays a vital role in studying the the “Green-Tech” introduction. The Green origins of the universe in NASA’s James Webb revolution is now impacting all application fields Space Telescope. in power electronics pushed by regulations: from low power with the need for improved cell- NASA’s Goddard Space Flight Center in phone battery chargers; to mid-range where
April/May 2010 www.compoundsemiconductor.net 71 news digest ♦ compound semiconductor motor control, home appliances, PV inverters, and materials for use in making solar cells, EV/HEV and white goods may consume less Natcore Technology Inc. has executed a letter energy; to higher power in which train traction, of intent to purchase Vanguard Solar, Inc., a wind turbines and energy T&D are expecting private firm controlling key intellectual property new solutions to reduce conversion losses. in the field of solar energy. The closing of the transaction is subject to the completion of This battle for an efficient world starts at the due diligence and mutually agreeable legal heart of every system: the power devices. documentation. These devices today are mainly based on silicon technology. Silicon diodes and silicon Vanguard has focused on the development transistors (MOSFET, IGBT, Thyristors…) of a flexible, thin-film photovoltaic material are the key components and are constantly potentially capable of silicon solar cell-like improving their performance, reliability, life- efficiency at one-tenth the manufacturing cost time and efficiency. However, year-to-year and one-twentieth the capital investment. improvements are slowing as they approach maximum theoretical specs. Vanguard employs a proprietary chemical bath process similar to Natcore’s liquid New materials have emerged in recent years phase deposition (LPD) technology, although and some may be able to displace existing Vanguard is growing II-VI compound silicon devices with enhanced characteristics, semiconductor thin films on carbon nanotubes less loss, higher operation temperature, longer at room temperature and ambient pressure, life-time and greater robustness to cycles. while Natcore has thus far concentrated on SiC was the first technology commercially producing solar cells by growing silicon dioxide introduced in the early 2000’s and GaN is now films on silicon substrates. coming to market as well. The first-generation products from Vanguard’s This 2-day seminar will begin with a review method could produce 15%-16% efficiencies the main market metrics from devices to at module costs of 60 cents to 70 cents per applications and current state of the art of watt. It is anticipated that second-generation the Silicon-based power electronics. It will technology could achieve 20% efficiencies then explore the capabilities of GaN and SiC at even lower costs per watt. The investment to disrupt that equilibrium and will highlight for production facilities is projected as low as the recent developments in a selection of $10 million to $15 million per 100-megawatt applications. to 150-megawatt production capability, as Register online at the website: http://www. compared with current costs of as much as the-infoshop.com/conference/power- $250 million for standard solar-cell production electronics-japan10/ facilities. Vanguard’s production equipment would be designed for insertion into an existing roll-to-roll film-coating line of the sort that has been displaced by the emergence of digital Natcore Technology Enlarges Solar Science photography. All production materials are widely Portfolio available and dramatically cheaper than silicon 2010-03-31 and other thin film systems. If successfully developed, the process would enable a very Vanguard’s technology to complement cost-efficient production capability in large- Natcore’s scale facilities.
One month after announcing the formation of Two of Vanguard’s shareholders are Professor a joint venture in China to produce equipment Andrew Barron and Dr. Dennis Flood, both of
72 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest whom are scientific founders of Natcore. It was obligation to update any forward-looking collectively felt that the acquisition of Vanguard statements or forward-looking statements that Solar and the integration of its technology into are incorporated by reference herein. Natcore’s intellectual property portfolio would continue to expand the depth and breadth of SOURCE Natcore Technology Inc. Natcore’s impact on the solar energy industry.
As consideration for the purchase of Vanguard Solar, Natcore has agreed to issue Vanguard Imec and partners start work on EU project shareholders common shares of Natcore PRIMA Technology, subject to the approval of the 2010-03-31
TSX Venture Exchange. Specific terms of the transaction will be provided upon closing of the Imec announces that it has started work, acquisition. together with its project partners, on PRIMA, a project under the EU’s 7th framework program “We are particularly excited about this for ICT (FP7). acquisition because it represents another compelling outgrowth of Prof. Barron’s The project’s goal is to improve the efficiency and cost of solar cells though the use of foundational work in chemical processes that metallic nanostructures. Next to imec, the mimic materials growth in nature,” says Chuck project coordinator, the partners involved in Provini, Natcore’s President and CEO. “In PRIMA are Imperial College (London, UK), fact, our company name, a combination of Chalmers University of Technology (Sweden), ‘nature’ and ‘core,’ was chosen to reflect this Photovoltech (Belgium), Quantasol (UK) and synthesis of natural processes--like the growth Australian National University (Australia). of an abalone shell-- that grow extraordinary materials in widely varied environments. By employing ultra-pure chemicals and modern Certain nanostructured metallic surfaces materials science, Prof. Barron has been able show unique characteristics: they can absorb to combine the best of man and nature.” and intensify light at specific wavelengths. This is because the incoming light results in Statements in this press release other than a collective oscillation of the electrons at the purely historical factual information, including metal’s surface. This phenomenon, studied statements relating to revenues or profits, or under the name plasmonics, has many the Company’s future plans and objectives, promising applications. It can be exploited to or expected sales, cash flows, and capital transmit optical signals through nanosized expenditures constitute forward-looking interconnects on chips, in nanoparticles that statements. Forward-looking statements are recognize and interact with biomolecules, or in based on numerous assumptions and are solar cells. subject to all of the risks and uncertainties With solar cells, metallic nanostructures can inherent in the Company’s business, including boost the absorption of light into the cell’s risks inherent in the technology history. There photoactive material. And with an enhanced can be no assurance that such forward- light absorption, it is possible to produce looking statements will prove to be accurate, cells with less base material, thus thinner as actual results and future events could and cheaper cells. Metal nanostructures can differ materially from those anticipated in such improve the absorption in various types of cells, statements. Accordingly, readers should not for example crystalline Si cells, cells based place undue reliance on such statements. on high-performance III-V semiconductors, or Except in accordance with applicable securities organic and dye-sensitized solar cells. laws, the Company expressly disclaims any
April/May 2010 www.compoundsemiconductor.net 73 news digest ♦ compound semiconductor
The aim of the FP7 project PRIMA is twofold. Mr Coffey added that the company’s share First, the project wants to gain insight price has been trending upwards recently, into the physical mechanisms of metallic achieving support on a par for the 50-day nanostructures, and in how they can improve moving average and with a buy range of the light absorption of the solar cell’s material. between 34 and 37. Second, the project’s partners want to study how these structures can best be integrated Veeco was founded in 1945 by two scientists into the production of solar cells. For this, they who took part in the Manhattan Project. will test a number of structures, benchmarking them against state-of-the-art solar cells. The The name is derived from the Vacuum performance and applicability of these cells will Electronic Equipment Company. However, in then be assessed by solar cell companies that the 1960s the firm merged with Lambda and are participating in the project. the Veeco of today was born.
European science traditionally is a leader in both the fields of photovoltaics and SSL Designer ‘achieves industry plasmonics and this project helps to maintain recognition’ Europe’s strong position. Moreover it provides 2010-03-30 the participating industrial partners with a competitive advantage, which should create A tool to streamline the design of LEDs has employment and sustainable economic growth been recognised with an award. in Europe, while simultaneously contributing to a reduction of the emission of greenhouse Future Lighting Solutions has received gases. recognition for the development of a tool which makes the design and manufacture of light- emitting diodes (LEDs) that much simpler, it Veeco ‘a leading player’ has been revealed. 2010-03-30 The firm’s SSL Designer product earned the Veeco has been described as one of the Industry Leadership accolade in LED Journal’s foremost companies for solar, LEDs and annual Innova Awards competition. It allows nanotechnology. businesses to optimise baseline system requirements and costs for LED production for Veeco has been described as leading player in solid-state applications. the fields of solar, LED and nano-technology. “We developed SSL Designer to help LED Brendan Coffey, editor of the Cabot Green application developers quickly map out the Investor, told Blogging Stocks that the New initial design of a new product, as well as York-based firm supplies tools and components manage the tradeoffs between performance to 80 per cent of the world’s LED manufacturers and costs,” said Patrick Durand, worldwide and had an order backlog as of the end of 2009 technical director for Future Lighting Solutions. of $402 million (£266.3 million) The company has pledged to showcase its SSL He commented: “The strength of the LED and Designer product - along with a number of its solar business, along with efficiencies Veeco other design offerings - at the Light + building management found during belt-tightening of in Frankfurt on April 11th to 16th and at Lightfair early 2009, means Veeco is on track to post its International in Las Vegas on May 12th to 14th first profit since 2006 this year.” - booth 1,121.
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TriQuint announced Supplier of the Year by for the Eastern District of Texas against ZTE STMicroelectronics. 2010-03-30 Avago alleges that certain STMicroelectronics Radio frequency device and foundry services products infringe four of Avago’s patents provider TriQuint has been honoured by a covering optical navigation technology Chinese wireless systems company. and is seeks cash compensation and an order preventing further infringement of the ZTE has honoured TriQuint by naming the technology. company as its Supplier of the Year for 2009. “Avago has devoted significant resources to inventing, developing and progressing the Chinese manufacturer of wireless technology that enables the optical mouse. communications systems equipment ZTE When necessary, we will defend our intellectual stated the firm has provided superior cost, property against infringement.” reliability, service and systems performance over the course of the last year, making Avago Technologies is a pioneer in the field TriQuint the recipient of this award for the third of navigation sensors and has spent millions year in a row. of dollars over many years developing the fundamental enabling technology behind optical Tim Dunn, vice-president for mobile devices at mouse sensors as well as a number of novel TriQuint, commented: “TriQuint is committed improvements. to providing ZTE with quality products and excellent service as together we address the Avago’s General Counsel, Patricia H. McCall, growth challenges inherent in the dynamic stated, “Avago has devoted significant telecommunications industry.” resources to inventing, developing and progressing the technology that enables the TriQuint was founded in 1985 and specialises optical mouse. When necessary, we will defend in the production of high-performance radio our intellectual property against infringement.” frequency modules, components and foundry services. The case is Avago Technologies U.S. Inc. et al. v. STMicroelectronics Inc. et al., case number In particular, it is a leading gallium arsenide 10-cv-00092 in the U.S. District Court for the supplier to major defence and space Eastern District of Texas. Avago is represented contractors, as well as delivering a range of by Mayer Brown LLP and Potter Minton PC. other products including gallium nitride and surface acoustic and bulk acoustic wave technologies. Global LED Market to Reach $14.8 Billion by 2015 Avago Technologies Files Optical Sensor IP 2010-03-31 Lawsuit Against STMicroelectronics 2010-03-30 The global LED market is projected to reach US$14.8 billion by 2015, driven by escalating Avago Technologies, a leading supplier of demand for efficient and larger electronic analog interface components for wired and displays for TV, lighting fixtures, notebooks wireless communications, industrial and and mobile handsets. The focus on energy consumer applications, announced today conservation is expected to promote uptake of that on March 15, 2010 Avago filed a patent LEDs in residential and commercial sectors infringement lawsuit in the U.S. District Court
April/May 2010 www.compoundsemiconductor.net 75 news digest ♦ compound semiconductor
Global LED market is expected to witness televisions, apart from the lighting sector. rapid growth, led by increasing demand for efficient displays and lighting fixtures along Nichia, Cree, Osram, Toyoda Gosei, and Philips with the rising awareness levels about energy Lumileds represent the five major players in conservation. Though high prices restricted the global LED market, and are commonly the initial use of LEDs to a small group of referred to as the “Big-5”. In 2008, Japanese applications (which included decorative company Nichia emerged as the biggest lighting, exit signs, architectural lighting, supplier, accounting for a quarter of the global and entertainment lighting), the current LED LED output. Key players profiled in the report market is relatively broad in terms of end- include Avago Technologies, Cree Inc., Edison use applications and encompasses notebook Opto Corporation, Citizen Electronics Co. Ltd., PCs, LCD TVs, residential and commercial Epistar Corporation, General Electric Company, lighting, handsets, and signals and displays. Lumination LLC, Nichia Corporation, Everlight Improvements in luminous efficacy and Electronics Co., Ltd., OPTOTECH Corporation, application technologies of LEDs led to their Kingbright Elec. Co., Ltd., OSRAM Opto utilization in backlights, landscape lighting, Semiconductors GmbH, OSRAM SYLVANIA traffic lights, and automobile lights. Due to Inc., Philips Lumileds Lighting Company, rising environmental concerns, most of the Stanley Electric Co. Ltd., Toyoda Gosei Co., governments are focusing on phasing out of Ltd., Seoul Semiconductor Co., Ltd., and incandescent lights, replacing them with energy Universal Display Corporation. efficient LED lights. The report titled “Light Emitting Diode (LED): Short-term growth is likely to be propelled A Global Market Report” announced by by the growing popularity of LED TVs and Global Industry Analysts, Inc., provides a notebooks, while general lighting segment is comprehensive review of market trends, end- expected to drive market growth in the long use market analysis, competitive scenario, run, as stated by the new market research product introductions/innovations, and recent report on Light Emitting Diode (LED) market. industry activity. The study analyzes market Mobile phones emerged as the leading end- data and analytics in terms of volume and use market with more than 25% share of value value sales for end-use markets including sales for 2009, while LCD TV is expected to Automotive, Phones, Portable PCs (Netbooks post the fastest growth in terms of volume and Notebooks), LCD TV, and Lighting & sales. The market is also expected to benefit Others. from rapid technological advancements that are For more details about this comprehensive expected to bring down the number of chips market research report, please visit - http:// per box as well as the average selling price of www.strategyr.com/LEDs_Light_Emitting_ LEDs. Diodes_Market_Report.asp Light Emitting Diode (LED): A Global Market Report Camtek announces Canon MJ partnership Although the global economic crisis significantly 2010-03-29 influenced the operations of LED market in 2009 leading to a sales decline in major LED Optical monitoring technology producer Camtek utilizing sectors such as has announced a partnership with Canon MJ. mobile phones, large outdoor displays and automotive, the decline was partly offset by Camtek has announced a strategic partnership the increasing use of LEDs in segments such with Canon Marketing Japan (Canon MJ) to as backlights for notebook PCs and LCD boost sales of its automatic optical inspection
76 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest systems in the country. new and more efficient ways of collecting energy and converting it into useable forms. The device has applications in memory These materials are also transforming the products, LED, CIS, 3D integration, MEMS, energy consumption of devices as mundane, compound semiconductor and automotive but important as lighting applications. We are integrated circuit yield enhancement and, as looking forward to showcasing these new such, the firm feels a partnership with Canon technologies during 2010’s event” MJ is in both organisations’ best interests. One of the keynote speakers during the event Kunio Kurihara, director of Canon MJ, will be Bedwyr Humphreys, General Manager commented: “By concluding this distribution of NanoGaN Ltd., a subsidiary of IQE plc, which agreement with Camtek, Canon MJ adds to its is developing and manufacturing free standing line-up wafer inspection systems that can be gallium nitride substrates that are used in the used in a wide range of semiconductor front- manufacture of blue laser diodes for optical end and back-end applications.” storage and UHB-LEDs for solid-state lighting (SSL). A key driver for rapid adoption of high Camtek specialises in the development of power UHB-LEDs in SSL is the need for much products to enhance production processes higher efficacy devices, which realistically, can and yield and is focused predominantly on the only be manufactured using low defect density compound semiconductor, printed circuit board free-standing GaN substrates. Commenting and IC substrates markets. on the opportunity to talk at this year’s S2K conference, Dr Humphreys added “We are Its products are used to monitor the production keen to create awareness of new materials of these technologies, with its inspection which will revolutionise the lighting industry equipment key to the detection of minor once they enter mainstream production. defects and pinpointing where manufacturing The use of these materials offers the potential improvements can be made. to significantly reduce energy consumption and carbon emissions”. Other confirmed speakers include: Malcolm Penn – Future Horizons, S2K 2010 event Low carbon technology Ed Ostan – Plasma-Therm, Martin Behringer announced. – OSRAM, PK Nathan – Brunel University, 2010-03-29 Raghu Das – ID Tech X and Michael LeGoff
- Plessey First launched in the year 2000, 1st & 2nd June 2010, City Hall, Cardiff Semiconductor 2000 as it was then known was designed to create a platform for dialogue and Prof. S. Ravi P. Silva, will be the Chairman of business development for the semiconductor this year’s S2K event in Cardiff. Ravi Silva, industry. The event now supports many of Professor of Solid State Electronics, is the the niche sectors which have developed over Director of the Advanced Technology Institute the past decade as well as supporting the (ATI) at the University of Surrey and heads the traditional spirit of the event which was to give Nano-Electronics Centre (NEC), which is an European based companies and in particular interdisciplinary research activity. The NEC has UK companies a global overview of market over 50 research staff. development and upcoming trends.
Speaking about the event Ravi stated “We This year’s S2K event which will be held in are all keen to manage carbon emissions and Cardiff on the 1st and 2nd June will build on the electronics has a particularly important role to new format of 2009 where several new features play. The development of new materials on the were incorporated and resulted in a very nanoscale is giving us the potential to develop
April/May 2010 www.compoundsemiconductor.net 77 news digest ♦ compound semiconductor successful and well attended event with a great use in high-power, high-frequency applications. level of engagement. The event will again be held at the Cardiff City Hall and the organisers, In particular, for use in the growth of AlGaN/ JEMI UK Ltd expect more that 120 top level GaN-based high electron mobility transistor micro, nano and semiconductor professionals structures. to attend the event. For more information on how to register for S2K or exhibit at the event, Dr Klaus Koehler, deputy department head of visit www.semiconductor2k.com or contact IAF’s epitaxy group, commented: “We have the JEMI office on +44 131 650 7815 or jemi- already made a good start on the development [email protected] of GaN on SiC transistors on our existing Aixtron reactors. However, we now need to JEMI UK JEMI UK is the Joint Equipment and significantly expand our capabilities.” Materials Initiative;anon- profit organisation, representing more than 55 companies and The institute stated its belief that the use form part of a network of organisations of GaN compound semiconductors will be throughout Europe. JEMI UK was founded commercially viable in the near future and this to promote the development of a strong new order will go a long way to making this a infrastructure to support the growth of reality. companies in the Semiconductor supplier industry, while ensuring that the interests Aixtron has its headquarters in Herzogenrath, of manufacturers and suppliers within the Germany, but operates offices throughout industry are properly represented. As part Europe, the US, Australia and Asia. of the value added services offered to its members, JEMI organises technical visits to major semiconductor facilities across the UK Walsin Lihwa signs with KAAI for joint R&D and Europe to encourage member to member of integrated light sources networking. 2010-03-26
Further details about JEMI UK and how to Walsin Lihwa Corporation announced today become a member can be obtained from their a cooperation agreement signed with the website at www.jemiuk.com or by telephoning US-based KAAI for the two parties’ joint Claire Watson on +44 131 650 7815 development of integrated light source packaging solutions.
Aixtron reports IAF epitaxy order The three-year program will develop a new 2010-03-26 generation of environmentally-sound photonics
applications. IAF has placed an order for an AIX 2800G4 HT, 11x4-inch MOCVD tool with Aixtron. Walsin Lihwa also invites three founders of KAAI as science advisors - professors Aixtron has announced the Fraunhofer Institute from Solid State Lighting & Display Center, for Applied Solid State Physics (IAF) has University of California, Santa Barbara (UCSB), placed an order for an AIX 2800G4 HT, 11x4- including the “father of blue light” Shuji inch metal-organic chemical vapour deposition Nakamura, as well as Dr. Steven Denbaars and (MOCVD) tool. Dr. James Speck who also attended the signing ceremony. IAF is planning to use the device to further its research into gallium nitride (GaN) on silicon Ching Hu, President of Walsin Lihwa Micro- carbide (SiC) compound semiconductors for Optical-Mechanical-Electronic Group, and
78 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Richard Craig, CEO of KAAI, presided over created a completely new way to produce the signing today. KAAI is world renowned for high quality semiconductor materials demonstrating the first continuous wave green critical for advanced microelectronics and Gallium Nitride lasers. nanotechnology. Published in the March 26 issue of Science, their research is a According to President Ching Hu, the advanced fundamental step forward in nanomaterials blue and green laser technology at KAAI science that could lead to significant advances will be critical to Walsin Lihwa¡¦s integrated in computer chips, photovoltaic cells, light source business development, and the biomarkers and other applications, according R&D cooperation between the companies is to authors and to experts not affiliated with the expected to effectively share resources and study. talents to generate an amazing synergy. “This is a major, major advance that shows In 2000, Walsin Lihwa commenced micro- it is possible to do something that was electromechanical system (MEMS) impossible to do before,” said Massachusetts development. In the past few years, the Institute of Technology Associate Professor company has been dedicating itself to MEMS Francesco Stellacci, whose own work focuses applications for integrated light sources with on discovery of new properties in nanoscale near 200 patents secured. materials and the development of new Walsin Lihwa strives for the R&D of integrated nanofabrication schemes. “This research light source packaging and wafer level actually shows that it’s possible at the packaging, providing total solutions to optical, nanoscale for two materials to happily coexist mechanical and electronic applications. The at their interface, two materials that would not MEMS team has been effectively attracting coexist otherwise,” explained Stellacci, who local and overseas talents enabling R&D was not involved in the study. independence in order to become a leading provider of miniaturized module. Led by Min Ouyang, an assistant professor in the department of physics and the Maryland Established in 1966, Walsin Lihwa is committed NanoCenter, the University of Maryland team to the manufacture and R&D of copper cables has created a process that uses chemical and wires, power cables and wires, and thermodynamics to produce, in solution, a specialty steel products. broad range of different combination materials, each with a shell of structurally perfect mono- The company -- a leader of power cable and crystal semiconductor around a metal core. wires as well as specialty steel products in Ouyang and fellow researchers Jiatao Zhang, the Greater China market -- has successfully Yun Tang and Kwan Lee, say their method expanded into the fields of MEMS and offers a host of benefits over the existing environmentally-sound photonics applications. process, known as epitaxy, used to create single crystal semiconductors and related devices. The biggest advantage of their non- University of Maryland claim breakthrough epitaxial process may be that it avoids two key material advance constraints of epitaxy -- a limit on deposition 2010-03-26 semiconductor layer thickness and a rigid requirement for “lattice matching.” Revolutionary solution for semiconductor and nano materials published in Science The constraints of the epitaxial method restrict the materials that can be formed with it. For University of Maryland researchers have example, authors Ouyang, Zhang, Tang and Lee note that attempts to use epitaxy
April/May 2010 www.compoundsemiconductor.net 79 news digest ♦ compound semiconductor to achieve the kind of hybrid core-shell in part by the NSF as a Materials Research nanostructures they demonstrate in their article Science and Engineering Centres shared have been unsuccessful. experiment facility.
“Our process should allow creation of materials “Nonepitaxial Growth of Hybrid Core-Shell that yield highly integrated multi-functional Nanostructures with Large Lattice Mismatches,” microelectronic components; better, more Jiatao Zhang, Yun Tang, Kwan Lee, Min efficient materials for photovoltaic cells; and Ouyang, Science, March 26, 2010. new biomarkers,” said Ouyang, who noted his team is in the process of applying for a patent. “We envision for example that we can use this LCD TVs to Exceed 180 Million Units in 2010 method to create new types of photovoltaic 2010-03-26 cells that are ten times more efficient in converting sunlight to electricity than current LED-Backlit Models to See Major Growth, cells.” Reaching 20% of LCD TVs This Year
“Our method doesn’t require a clean room 2009 was a robust year for the overall flat panel facility and the materials don’t have to be TV market, with total units rising worldwide by formed in a vacuum the ways those made by more than 32%, very similar to 2008 growth conventional epitaxy do,” Ouyang said. “Thus rates. In markets such as Japan and China, it also would be much simpler and cheaper for growth in 2009 was better than in 2008, companies to mass produce materials with our despite the recession. Given the strong result process.” in 2009 and the positive influence of new technology introductions such as 3D and LED, Epitaxy is one of the cornerstones of DisplaySearch has increased its worldwide contemporary semiconductor industry and TV market forecast for 2010 by more than 10 nanotechnology, and has been considered the million units to 228 million units. most affordable method of high quality crystal growth for many semiconductor materials “The rapid transition to flat panel technologies including silicon-germanium, gallium nitride, in emerging markets and the robust level of gallium arsenide, indium phosphide and growth even in mature markets has led us graphene. to improve our outlook for 2010,” observed Hisakazu Torii, Vice President of TV Market The new method also can be used to design Research for DisplaySearch. “This is especially and fabricate artificial quantum structures that true for LCD TVs, which are now projected help scientists understand and manipulate to exceed 180 million units in 2010, a 24% the basic physics of quantum information increase over 2009. This is helped by the processing at the nanoscale, said Ouyang, introduction of new technologies like 3D, as noting that he and his team have a separate well as the expansion of newer features like paper on the quantum science applications of LED backlights and internet connectivity.” this method that they expect to be published in the near future. Price erosion was the major factor contributing to the excellent growth in 2009, with LCD This work was supported by the Office of Naval TV average prices falling 24% from 2008, Research, the National Science Foundation much more than any preceding year. In 2010, (NSF), and Beckman Foundation. Facility volume-weighted average prices are only support was from Maryland Nanocentre and projected to fall by 5% for LCD TVs and 10% its Nanoscale Imaging, Spectroscopy, and for plasma TVs. The reasons for the more Properties Laboratory, which is supported modest decline are renewed growth in larger
80 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest screen sizes, the fact that prices fell so far among manufacturers in 2010, with LED in 2009, and the increased share of more models comprising more than 50% of some expensive LED-backlit LCD TV models, which lineups, will drive that average premium down carry a notable premium. Plasma TV unit to less than 70% over 40” and as low as shipments are expected to rise about 6% in 17% at 22-24”. Overall, this should push the 2010 to just over 15 million units, after a 2% LED-backlit LCD TV market to more than 35 decline in 2009, aided by more robust 40”+ million units or 20% of total LCD TV shipments growth and the introduction of 3D plasma TVs worldwide.” from a number of different manufacturers. CRT TV shipments will continue to fade from the DisplaySearch is now tracking LCD TV market, falling by 36% in 2010 after a 40% drop shipments by backlight type, breaking the in 2009. market into edge-type and direct-type (full- array).For 2010 as a whole, almost 90% of LCD TVs will be of the edge-type variety. This Figure 1: Worldwide TV Market by is due to the lower cost associated with using Technology a smaller number of LEDs at the perimeter, as
well as the attractive thin and light form factor.
Figure 2: LCD TV Market Revenue Share by Backlight Type
Source: DisplaySearch Quarterly Advanced Global TV Shipment and Forecast Report Source: DisplaySearch Quarterly Advanced 2010 LED-Backlit LCD TV Shipments to Global TV Shipment and Forecast Report Exceed 35 Million Units The high frame-rate segment of the LCD TV The LCD TV shipment outlook has been market also continues to expand, with 120 Hz increased to 180 million units in 2010, driven and higher frame rates accounting for about in part by the rapid expansion of LED backlit 22% of LCD TV unit shipments in 2010. At models.In 2009, an estimated 3.6 million LED- larger screen sizes, the 120 Hz+ share jumps backlit LCD TVs shipped worldwide, with more to more than 50%. Of course, on a revenue than half of that coming in Q4’09. For 2010, basis, the share is much higher due to the companies throughout the supply chain are market premiums associated with high frame- gearing up for a more aggressive rollout of LED rate models. models. The DisplaySearch Q1’10 Quarterly Advanced “LED-backlit LCD TVs carried a significant Global TV Shipment and Forecast Report premium in 2009 over CCFL-backlit includes panel and TV shipments by region counterparts, more than 100% on average and by size for nearly 60 brands, and also above 40” screen sizes,” noted Paul Gagnon, includes rolling 16-quarter forecasts, TV cost/ Director of North America TV Market Research. price forecasts and design wins. This report is “However, the increased level of competition delivered in PowerPoint and includes Excel-
April/May 2010 www.compoundsemiconductor.net 81 news digest ♦ compound semiconductor based data and tables.. Program Manager [email protected] Learn more about DisplaySearch’s TV market forecast at the DisplaySearch Taiwan FPD Conference, to be held on April 8-9 at the Taipei International Convention Center in New plant for LED boom in India Taipei, Taiwan, and the SID DisplaySearch 2010-03-25 Business Conference on May 24 during SID Display Week in Seattle, Washington. For De Core Nanosemiconductor setting up more information on these events, visit www. semiconductor chips plant in India displaysearch.com/events. According to reports in news wires in India, De Compact Mid-Ultraviolet Technology 2010-03-26 Core Nanosemiconductor, led by Punjab-based Deepak Loomba, is setting up what it claims DARPA is soliciting innovative research will be the country’s first semiconductor chips proposals in the area of efficient middle plant, at Gandhinagar in Gujarat. The facility ultraviolet (200-300 nm) emitter technology. will initially manufacture semiconductor chips for light emitting diode (LED) lamps in a bid The goal of the Compact Mid-Ultraviolet to capitalise on a growing LED and blue ray Technology program is to develop the essential markets. The company will invest Rs 1,100 heteroepitaxy, waveguides, cavities, and crore over the next five years for manufacturing contacts to enable efficient light emitting diodes LED lamps. This will include Rs 900 crore on (LEDs) and chip-scale semiconductor lasers the Gandhinagar plant and Rs 200 crore at operating at wavelengths below 275nm. Other their existing plant at Noida compact technologies resulting in mid-UV lasers will also be considered to the extent “The LED lamps plant in Noida is expected that an overall footprint and performance to commence in two months. For these LED competitive with a semiconductor solution lamps, we need chips, which we decided to can be reasonably achieved. These ultraviolet produce in India. Making chips in India will devices will significantly improve the size, bring down the cost of LED lamps,” Loomba, weight, power, and capability of chemical/ the company’s MD and CEO. “We are setting biological-agent detectors, portable water up this plant in GIDC Electronic SEZ. We set purification illuminators, and numerous other up the plant on four acres of land and are UV-dependent applications with respect to interested in buying two acres adjacent to it,” existing systems. he is quoted as saying.
Proposed research should investigate The goal is to have the capacity to produce 400 innovative approaches that enable million chips annually at Gandhinagar and to revolutionary advances in science, devices, or produce 70 lakh LED lamps annually at Noida. systems. Specifically excluded is research that primarily results in evolutionary improvements The company also plans to make chips for to the existing state of practice. mobile phones and blue ray components.
Contracting Office Address 3701 North Fairfax Drive Arlington, TriQuint ‘most popular’ semiconductor Virginia 22203-1714 brand in China 2010-03-25 Primary Point of Contact John Albrecht, TriQuint has achieved an award in China for
82 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest being the favoured supplier of semiconductors President Dr. Rick Tsai and the hard work and RF products. of all the colleagues involved, the strategy, goals, and execution of our new businesses Radio frequency (RF) device and compound have developed very successfully in the past semiconductor developer TriQuint has received several months. The groundbreaking for our the accolade of being the most popular LED lighting R&D centre and fab is an excellent semiconductor brand in China, it has been example, and I look forward to even more revealed. progress once construction is complete.”
The honour was bestowed following an online “LED lighting is a promising industry, and poll of readers of China Electronic News and we will make full use of TSMC’s technology incorporating the choices of the publication’s leadership and manufacturing excellence editorial team. The company began operating in semiconductors to develop and integrate in the country in 2001 and has subsequently LED technology, process, and packaging and opened offices in Shanghai, Shenzhen and testing,” said Dr. Rick Tsai, TSMC President Zhongshan, as well as launching a Chinese- of New Businesses. “ We will enter the market language website. next year by offering LED light sources and light engines to pursue the broad business “We are honoured to receive this award from opportunities of the LED lighting industry.” China Electronic News,” said Ting Xiong, China country manager of TriQuint. This LED fab is located on Li-Hsin Road 4 of the Hsinchu Science Park and will be built in Other awards which the company has received two phases. Investment in plant and equipment in recent years include the Raytheon 4 Star for the first phase is expected to reach NT$5.5 Excellence award in 2009, Kyocera RF Supplier billion, and equipment move-in is scheduled for of the Year 2009, the ZTE Best Global Supplier fourth quarter of 2010 with volume production 2008-09 and the Northrop Grumman Strategic in the first quarter of 2011. TSMC will make Supplier Award 2008, as well as being voted a decisions on construction of the second phase finalist in the Portland Business Journal 2009 depending on future business needs. Manufacturing Awards. TSMC is actively recruiting for its LED lighting business and welcomes talent in areas TSMC breaks ground on fab for LED lighting including technology development, process business integration, product mechanical engineering, 2010-03-25 packaging, testing, equipment engineering, facilities, and business development. TSMC today held a groundbreaking ceremony for its LED lighting R&D centre and fab in Hsinchu Science Park, setting an important milestone for the company’s entry into green Join the 25th Anniversary CS MANTECH energy. conference 2010-03-25 “To further strengthen long-term growth in TSMC’s revenues and profits, we not only May 17-20, 2010 in Portland, Oregon USA continue to pursue excellence in the field of dedicated IC foundry, we are also developing Bring yourself up-to-date on the latest new businesses such as LED lighting and in optimum compound semiconductor solar power,” said TSMC Chairman and CEO manufacturing processes. Dr. Morris Chang. “With the leadership of
April/May 2010 www.compoundsemiconductor.net 83 news digest ♦ compound semiconductor
To celebrate the Silver Anniversary, special sessions will be held looking back at the history of the CS industry and what’s in store for the future. The 2010 CS MANTECH program begins on Monday, May 17th with a series of tutorial workshops focused on the basics of CS RF device manufacturing technology. In addition, this year’s conference will host the internationally acclaimed ROCS Workshop (Reliability of Compound Semiconductors) being held on opening day of the conference.
No CS MANTECH would be complete without the associated social gatherings and exhibit hall Chung Hoon Lee/Seoul Semiconductor, Prof. hours providing attendees with an exceptional Shuji Nakamura opportunity to network with fellow leaders in the field. He is widely known for having developed the high-brightness blue LED based on GaN in The Portland Marriott Downtown Waterfront 1993 while working for Nichia Corporation in Hotel, will be the host and is just steps away Japan. from the scenic Waterfront Park on the Willamette River, as well as the vast array of In those days, developing a blue LED was dining and entertainment options Portland has considered impossible; only red and green to offer. LEDs had been available for the prior 20 years. Prof. Nakamura’s innovation allowed LED For more information including registration, manufacturers to produce LEDs with three technical sessions and exhibits please visit: primary colors (red, green and blue) which www.csmantech.org could be mixed to express 16 million colors. Perhaps most importantly, the new technology was leveraged by the LED industry to begin Shuji Nakamura, Prominent LED Lighting commercial production of white LEDs, the Scholar and Inventor, Joins Seoul semiconductor ecological light source. Semiconductor as Consultant 2010-03-25 GaN-based white LED will be an integral part of the global wave of lighting upgrades worldwide. Shuji Nakamura, widely known as the “Thomas Nakamura is a co-author of “The Blue Laser Edison of the LED industry” has been named Diode: The Complete Story” (Springer, 2000). a scientific adviser to the leading global LED His work is chronicled in the book “Brilliant! manufacturer Seoul Semiconductor Co., Ltd. Shuji Nakamura And the Revolution in Lighting Nakamura is a professor at the Materials Technology” by Bob Johnstone (Prometheus Department of the College of Engineering, Books, 2007). University of California, Santa Barbara (UCSB). In 2006, Nakamura won the Millennium Technology Prize of Finland, known as “the Nobel Prize in the technology field.” In 2004, he received the Benjamin Franklin Medal in the engineering segment, previously conferred upon Thomas Edison and Albert Einstein.
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In addition, he won The Economist’s Innovation GaN is an emerging process technology for Award, given to only six scientists who have power management chips that recently moved made an outstanding contribution to innovation beyond the university-based testing phase and of technology. In 2009, he received the Harvey into the commercialization stage. Prize from the Technion in Israel. The technology represents an attractive market Nakamura holds B.A., M.A. and Ph.D. degrees opportunity for suppliers by providing their in Electronic Engineering from the University customers with capabilities that may be out of of Tokushima, Japan. He was appointed a the reach of present semiconductor process professor in the Materials Department at materials. University of California, Santa Barbara, in 2000. iSuppli believes that during the past two years, As a professor in the Material Department several events have occurred that have made and co-director of the Solid State Lighting and GaN an up-and-coming star in the power Energy Center (SSLEC) at the University of management semiconductor world. California, Santa Barbara, Prof. Nakamura is leading the effort to develop the next- First, the use of silicon has reached its practical generation LED and Laser Diode (LD) based limits in power management semiconductors. on the blue LED, as well as a GaN-based solar Furthermore, there have been major cell. breakthroughs in growing GaN layers on “Seoul Semiconductor Co., Ltd. is proud to be silicon. Power designers also want to develop one of the industrial sponsors of the SSLEC. more efficient systems and to update their high- Prof. Nakamura’s consulting will lead Seoul voltage products to waste less electricity. Semiconductor’s bright future,” Senior Vice President S.M. Lee of Seoul Semiconductor Component suppliers have begun offering GaN said. parts. International Rectifier Corp., for instance, released its first GaN technology-based Point- Doug Hardman, North American Marketing of-Load (POL) solutions in February, while Director for Seoul Semiconductor, said: Efficient Power Conversions Corp. (EPCC) “The legendary Professor Shuji Nakamura’s is placing all its bets on GaN technology, consultancy with Seoul Semiconductor is sure releasing 10 power MOSFET devices this to accelerate our leadership position in LED month. technology for North America and all the world.” The figure presents iSuppli’s GaN power management revenue forecast for the period of GaN Power Management Chip Market Set 2008 through 2013. for Boom 2010-03-24
Events over the past two years have allowed the technology to reach its potential
Thanks to rapid growth in the high-end server, notebook, mobile handset and wired communication segments, the Gallium Nitride (GaN) power management semiconductor market is expected to reach $183.6 million in revenue by 2013, up from virtually nil in 2010, according to iSuppli Corp.
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Efficiency needed SVTC ranks global solar companies 2010-03-24 The adoption of GaN devices will be driven by the improved efficiency and small form factors European companies are the most enabled by the material. Such benefits are in environmentally aware in report from Silicon particularly high demand for portable electronic Valley Toxics Coalition products, including mobile PCs and smart phones. They also provide advantages for The Silicon Valley Toxics Coalition (SVTC) has power-hungry electronic equipment, such as released its 2010 Solar Company Scorecard enterprise servers and wired communications that ranks manufacturers of solar photovoltaic infrastructure gear. (PV) modules according to a range of factors including environmental health and safety, However, adoption of GaN technology for sustainability, workers’ rights, and social justice. these applications in 2010 and 2011 will be Companies self-reported on these areas and slow due to the high cost of parts using the the results serve as a resource for institutional material. As the technology advances and the purchasers, investors and consumers. cost of manufacturing GaN technology drops in 2012 and 2013, the technology will begin “Supporting SVTC’s groundbreaking research to steal market share away from conventional was significant because it is the first time that MOSFETs, driver ICs and voltage regulator ICs. the social and environmental performance of solar companies has been assessed and The first adoption of GaN devices most likely compared. Solar power is key to helping solve will be among servers, which always demand the world’s climate crisis,” explained Sheila high-performance devices and often are Davis, executive director of SVTC. “But the one of the first product areas to accept new industry still faces serious issues that need to technologies that improve performance. Over be addressed before it can be considered truly the next three years, the bulk of device volume ‘clean and green’ and socially just.” likely will be driven by notebooks, as the power The 14 responding companies represented 24 savings and smaller form factor delivered by percent of the 2008 module market share and GaN will be in high demand. . 31 percent of the cumulative market share.
Marijana Vukicevic is the principal analyst for The top three scores were earned by German power management at iSuppli Corp. manufacturers Calyxo, SolarWorld and Sovello, scoring 90, 88 and 73 respectively. Discover more about the emerging power management technologies with Vukicevic’s new The two U.S.-based respondents scored in report entitled World of Unlimited Possibilities the mid range: First Solar in Arizona received — GaN Devices to Capture Market Share. For a score of 67 and Colorado-based Abound more information on this report, please visit: received a 63. The report also found that: http://www.isuppli.com/Pages/World-of- * 57% of respondents would support Unlimited-Possibilities-GaN-Devices-to- mandatory take back and recycling programs in Capture-Market-Share.aspx the markets where they sell solar panels.
* 42.8% of companies are setting aside money to finance the collection and disposal of end-of-life panels and 50% said that they provide recycling services free of charge.
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* 50% have undertaken analysis of their Sustainable Solar Energy Industry report issued supply chain to document the social and in January 2009 as part of the organization’s environmental impacts associated with different Clean and Just Solar Energy Campaign. production phases. The report detailed the hazards related to the * 36% of companies said that they conduct manufacturing and disposal of solar PV panels lifecycle analyses or risk assessments on new and recommends actions that the solar industry chemicals, including nanomaterials. can take toward creating a sustainable sector.
“The solar industry needs high corporate responsibility standards if it is to fulfil its potential as a truly sustainable industry,” said OEM acquires Tegal legacy equipment 2010-03-24 Seb Beloe, head of sustainable and responsible investment (SRI) research at Henderson OEM Group acquires legacy thin film etch and Global Investors, which sponsored the survey. PVD product lines from Tegal Corporation “Supporting SVTC’s groundbreaking research was significant because it is the first time that the social and environmental performance of solar companies has been assessed and compared.”
“The solar industry can learn from other industries that have adopted responsible social, environmental and supply chain standards in order to prevent future problems,” added Steven Heim, director of social research and advocacy for Boston Common Asset Management, another sponsor. “SVTC’s research will help promote best practices by the OEM Group, equipment solution providers solar industry.” to worldwide makers of Silicon, MEMS, LED, RFID, Power Devices, and Photovoltaic SVTC is calling for mandatory take back and devices, have announced 2010 the successful responsible recycling by solar companies as completion of the acquisition of Tegal a step toward reducing the solar industry’s Corporation’s legacy Thin Film Etch and PVD environmental footprint. product lines. In this acquisition, OEM Group adds the Tegal 900ACS, 980ACS, 6500 As the solar industry works to replace fossil HRe and 6500 Spectra series Thin Film Etch fuels, it is in the industry’s best interest to products, and the Sputtered Films Endeavor ensure that pollutants from the panels don’t and AMS PVD series products to their enter the environment. “LEGENDS” offering. Tegal’s legacy product lines will join the MRC Eclipse (PVD), AG Only the solar producers can ensure that this Heatpulse (RTP), Lam AutoEtch (Etch), and will happen by eliminating toxic chemicals Varian Sunset (Implant) platforms. from their products and by taking responsibility for their environmental and health impacts OEM Group will bring continued global support throughout the entire lifecycle. to existing Tegal Thin Film Etch and PVD customers, with an install base approaching The Solar Company Scorecard follows 2000 systems; and, by integrating these world the release of SVTC’s Toward a Just and class technologies into their already deep
April/May 2010 www.compoundsemiconductor.net 87 news digest ♦ compound semiconductor product mix, OEM Group is well positioned Institute providing insight into GaN to serve the growing number of customers in 2010-03-23 emerging markets, like MEMS, BAW, LEDs, and beyond. OEM Group will also build upon The many achievements of the Institute of Tegal’s success in AlN PVD foundry services, High Pressure Physics in Warsaw have been and offer the most comprehensive mix of PVD highlighted. platforms to their foundry customers. The Institute of High Pressure Physics in OEM Group’s president, Mr. Wayne Jeveli, Warsaw has highlighted the work carried out comments on today’s exciting acquisition: “In by its scientists in the development of gallium early 2008, OEM Group launched a strategic nitride-based (GaN) compound semiconductors initiative that responded to changes prevalent over the last 30 years. in our industry. We saw a need for nimble, cost conscious, global vendors to serve the future Institute director Professor Sylwester Porowski needs of mature fabs in all markets, including said in an interview with Polish Market fabs manufacturing at 8”, 6” and below. We also Online that work at the institute has focused saw emerging markets that could truly benefit on delivering defect-free GaN crystals for from existing, cost effective technologies. many years. In addition, it has worked on the Since that time, we have completed 3 marquee development of applications for these crystals, acquisitions. including in metal-organic chemical vapour deposition, molecular beam epitaxy and in laser The first in 2008 included the LEGENDS assets of Applied Materials and Metron. In diode systems. 2009, we followed this up with our purchase of the Air Products Tool Services Group. And “Green is the only colour missing in the RGB now, today’s acquisition takes our LEGENDS (red, green and blue) laser colour triangle. offering to a new level. Tegal’s PVD technology Without green it is impossible to show natural complements our existing PVD product offering colours through projectors, laser displays or perfectly, and gives unique capabilities in TVs,” he commented. applications likes AlN. However, Professor Porowski is confident this Of course, Tegal has an unparalleled brand in situation will soon be rectified, as scientists thin film plasma etch, earned over 38 years of are on the brink of making true green lasers industry experience. This new depth in plasma a reality. The institute was founded in 1958 etch truly completes our offering to current and by academician LF Vereshchagin. It originally emerging markets. Our vision for OEM Group’s dedicated its work to improvements for the LEGENDS strategy is ‘Proven Technology for a diamond industry in the USSR in the 1960s, New World’, and we’ve just taken another major before being declared an official scientific step to making this a reality.” institute in 2004.
The Tegal Thin Film Etch and PVD product acquisition, last year’s opening of their new SAFC plan TMG plant expansion global headquarters in the US and distribution 2010-03-23 centre in Japan, and nearly complete service facility in Taiwan, place OEM Group at SAFC Hitech, a business segment within the forefront of serving these new market SAFC, a division of the Sigma-Aldrich requirements. Group, has announced it plans to invest $2m (approximately £1.2m) in expanding production of trimethylgallium (TMG) at its
Bromborough, Wirral, UK manufacturing plant.
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The investment, which was supported by draws on our Bromborough facility’s core Wirral Council and The Mersey Partnership competencies, but also reinforces Sigma- (TMP), who helped secure additional funding Aldrich’s overall strategy of leveraging of £300,000 from the Northwest Regional proprietary technologies and capabilities into Development Agency (NWDA), is expected to new, fast growing market segments, thus enable SAFC Hitech to strengthen its position differentiating ourselves and our materials as a leading supplier of TMG and satisfy offerings through technical innovation,” the growing demand for the material in the commented Dr. Geoff Irvine, VP, Business production of high brightness LEDs (HBLEDs) Development, SAFC Hitech. for use in applications such as backlighting in flat panel television sets and energy efficient “This investment is expected to accelerate the lighting delivery of TMG to a growing market position and reinforce our position as a leading global Reducing energy consumption and extending manufacturing and distributor for the growing energy efficiency are trends driving the global LED market worldwide, as well as create jobs electronics industry to provide more energy- in the area, which is positive news given the efficient products and systems. current economic climate.”
Demand in the lighting industry, for example, has seen improvement with the deployment of Finisar to Demonstrate Tunable XFP Optical LEDs to replace currently ubiquitous systems Transceiver - incandescent light bulbs, fluorescent lighting 2010-03-23 and its compact fluorescent lamp (CFL) derivative. As a result, the electronics market is Finisar will also demonstrate Low Port Count at the start of a phase where mass manufacture Wavelength Selective Switch (WSS) and New of HBLEDs is occurring. Programmable Optical Processors Enabling 40 and 100 Gb/s Applications TMG has been manufactured at SAFC Hitech’s Bromborough facility for a number of years, Finisar Corporation today announced that it primarily for supply to the global semiconductor will demonstrate several new technologies and industry. products at OFC, including a 10 Gb/s tunable XFP transceiver operating from 8.5 to 11.3 Gb/s However, as TMG also fulfills the technical across multiple protocols, an Edge Wavelength criteria for devices designed for the LED, laser, Processor (EWP) 1x2 port 50 GHz Wavelength communication and other markets, the boom Selective Switch, and a WaveShaper Optical in demand for LEDs has led to the conclusion Processor. Based on innovations such as high- that expanding the plant - with its expertise performance Liquid Crystal on Silicon (LCoS) and specific manufacturing knowledge for this technology and high-volume manufacturing process - was the ideal business solution to capabilities, these demonstrations confirm meet customer demand. Finisar’s commitment to providing developers and system integrators with the key tools The £300,000 Grant for Business Investment and equipment they need to design and (GBI), which was awarded by the NWDA, implement reliable, high-speed communications is part of ‘Solutions for Business’, the UK applications. Government’s package of publicly-funded business support designed to help companies 10 Gb/s Tunable XFP Highlighting Finisar’s start and grow. exhibit will be the 10 Gb/s tunable C-Band XFP, a wavelength-tunable optical transceiver “Expanding our TMG capacity not only designed for high-volume production. The
April/May 2010 www.compoundsemiconductor.net 89 news digest ♦ compound semiconductor demonstration will show the transceiver’s offers the unique capability to control both the wavelength-changing abilities and superior amplitude and phase characteristics of filters optical performance required for high- and switches to simplify development and bandwidth optical transport networks. The testing of high-speed optical systems at 40 and performance exceeds many industry standard 100 Gb/s. specifications such as SONET/SDH, OTN, Ethernet, and Fiber Channel. Providing full -- The S-Series WaveShaper, currently C-Band wavelength selection in a compact shipping, offers independently programmable form factor, the transceiver has exceptional control of the amplitude and phase power dissipation margin to MSA requirements. characteristics of a optical filter. It provides an The tunable XFP enables greater line card extensive range of control functions, including density, flexible provisioning to match changing adjustable center frequency, high extinction, bandwidth demand, decreased maintenance programmable dispersion, and support for both cost through remote configurability, and narrow-band and broad-band system testing. simplified inventory control. It is the ideal tool for DWDM system and component testing, optical pulse shaping and “Finisar is a market leader in fiber optic control, and high-speed optical research and transceiver technology with the facilities in- development. place to support a high-volume ramp of the tunable XFP,” said Rafik Ward, Vice President -- Being shown for the first time is the M-Series of Marketing at Finisar. “We are uniquely WaveShaper. Measuring just 210 x 140 x 37 positioned to address the specific technical and mm, the M-Series is designed for systems manufacturing needs of OEMs as they make integrators who wish to utilize WaveShaper’s the transition to tunable transceivers.” unique amplitude and phase control capabilities as part of their own system or subsystem. EWP Wavelength Selective Switch Finisar will also be showing a demonstration of its EWP Available as both a Programmable Optical 1x2 Wavelength Selective Switch in operation Filter and as a four-port Programmable Optical under typical network application conditions. Processor, the M-Series WaveShaper begins Based on Finisar’s industry-leading LCoS shipping in calendar Q2 2010. technology, the EWP provides 1x2 / 2x1 port operation at 50/100 GHz channel spacing with -- The P76 Shape Selectable Filter, also being broad pass-band and full 0-20 dB attenuation shown for the first time, is a tunable optical control without compromising 40/100 G filter with programmable center frequency, functionality or performance. The EWP also bandwidth and the ability to select the filter supports dual 50/100 GHz channel operation shape from a range of built-in profiles including and channel contouring. The EWP employs Flat-Top, Gaussian, and Lorentzian. The advanced High Temperature Co-fired Ceramic P76 contains no moving parts and is easily (HTCC) hermetic packaging technology, which controlled from its touch-screen display. together with its advanced optical design, allows it to fit onto a single height card. This In addition to these demonstrations, Finisar compact design provides a cost-effective will display equipment from its wide portfolio dynamic switching solution for the network of optical products, including transceivers, edge. transponders, WSS ROADMs, advanced optical components, and passive devices. For Programmable Optical Processors Finisar will more information about OFC/NFOEC, visit also demonstrate three LCoS-based products www.ofcnfoec.org. from its WaveShaper family of Programmable Optical Processors. The WaveShaper family
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Oxford Instruments - TDI Appoints new Kyma Responds to CS Article entitled “Bulk General Manager at Silver Spring, Maryland, GaN: Ammonothermal Trumps HVPE” USA 2010-03-24 2010-03-23 Kyma Technologies, Inc., supplier of ultra-high Oxford Instruments - TDI, part of the Oxford purity crystalline gallium nitride (GaN) and Instruments Group, announces the appointment aluminum nitride (AlN) materials and related of Neil Wester as General Manager. products and services, released the following statements in response to a feature article that was published in Compound Semiconductor on March 1, 2010, entitled “Bulk GaN: Ammonothermal Trumps HVPE.”
“We have mixed feelings about responding in the public domain, but in the end we have chosen to do so,” said Dr. Keith Evans, Kyma president and CEO. “Kyma’s stakeholders can rest assured that the GaN HVPE growth His key responsibility will be to oversee both process is here to stay, and that HVPE will product and process developments at TDI’s remain the primary technology used to make Silver Spring, Maryland, USA facility. With GaN boules from which commercially available a Masters degree in Material Science and substrates can be sliced and polished.” Engineering, Neil has extensive R&D and product development experience with key Kyma uses the hydride vapor phase epitaxy players in the Integrated-circuit, Solar, and (HVPE) process for making GaN substrates. Optoelectronic material and device industries, Along with others, Kyma has shown that the including TDI’s focus area of HB LED. quality of HVPE GaN improves as it grows Aimed at the LED, high efficiency laser, thicker after starting on a foreign substrate solar, and power IC devices markets, TDI’s (which is usually sapphire). If high-quality proprietary Hydride Vapour Phase Epitaxy GaN seeds were to become available, the (HVPE) technology has allowed it to develop foreign substrate could be eliminated and the CrystalFlexTM, a prototype highvolume, value proposition of HVPE for GaN device industrial-scale manufacturing machine for free- applications would be further strengthened. standing Gallium Nitride (GaN) materials. “We read the article as an affirmation that TDI collaborators include the University HVPE is the commercial leader in large part of Maryland and other U.S. researchers due to its high growth rate, high purity, and and manufacturers. The recently awarded its demonstrated benefits in commercially grant of $600,000 by the Maryland Energy important devices. HVPE’s primary challenge Administration will help TDI achieve the broad is the lack of availability of good seeds. In adoption of energy-efficient LED lighting, and contrast, ammonothermal growth makes expand its workforce. higher quality crystals, but at growth rates of 2-4 micron/hr. This is well below the 1mm/hr Oxford Instruments aims to pursue responsible that is typical of all commercially successful development and deeper understanding of the semiconductor material manufacturing world through science and technology, and processes (including hydrothermal quartz), and this award will contribute enormously to this therefore ammonothermal is not in the market,” endeavour. stated Evans.
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“We believe that the article represents SAFC Hitech Well Positioned for High- the perfect argument for employing Brightness LED Manufacturing Boom ammonothermal grown GaN seeds in an HVPE 2010-03-23 growth process,” stated Dr. Ed Preble, Kyma COO and VP Business Development. “Such a TMG Expansion at Bromborough UK Plant combination represents the ultimate in terms of GaN substrate product quality, cost, and time- SAFC Hitech, a business segment within to-market.” SAFC, a division of the Sigma-Aldrich® Kyma hopes that ammonothermal grown GaN Group today announced it plans to invest seeds will become commercially available, $2m (approximately 1.2m pounds Sterling) in while in parallel it is developing new HVPE expanding production of trimethylgallium (TMG) based seed generation techniques that at its Bromborough, Wirral, UK manufacturing potentially render the foreign substrate a non- plant. The investment, which was supported issue. by Wirral Council and The Mersey Partnership (TMP), who helped secure additional funding of “Our latest HVPE-only seed expansion and 300,000 pounds from the Northwest Regional boule growth results show great promise and Development Agency (NWDA), is expected to benefit due to recent innovations at Kyma,” enable SAFC Hitech to strengthen its position added Preble. “Our intent is to develop seeded as a leading global supplier of TMG and satisfy boule growth processes which effectively the growing demand for the material in the put foreign seed based GaN defects and the production of high brightness LEDs (HBLEDs) associated single wafer limited liftoff processes for use in applications such as backlighting in behind us. This will drive GaN prices from over flat panel television sets and energy efficient $1000 per 2” wafer down to less than $100 per lighting. 2” wafer.” Reducing energy consumption and extending Additionally, there are many other secondary energy efficiency are trends driving the global parameters and growth technology subtleties electronics industry to provide more energy- that are also important with respect to the efficient products and systems. Demand in manufacturability of a GaN growth process, the lighting industry, for example, has seen such as the controllability of n-type and improvement with the deployment of LEDs compensation doping, the temperature to replace currently ubiquitous systems – dependence of substrate electrical conductivity, incandescent light bulbs, fluorescent lighting presence of unintentional background and its compact fluorescent lamp (CFL) impurities, presence of native vacancies and derivative. As a result, the electronics market is anti-site defects, and the ability to expand at the start of a phase where mass manufacture the crystal in one or more crystallographic of HBLEDs is occurring. directions. Lastly, 100% recyclability of unused gallium in Kyma’s HVPE growth systems has TMG has been manufactured at SAFC Hitech’s allowed Kyma to trade off growth efficiency for Bromborough facility for a number of years, process stability and speed, eliminating the primarily for supply to the global semiconductor need to have high efficiency gallium utilization industry. However, as TMG also fulfills the in each growth run. Kyma believes these technical criteria for devices designed for the many secondary issues favor HVPE over LED, laser, communication and other markets, ammonothermal growth. the boom in demand for LEDs has led to the conclusion that expanding the plant – with its expertise and specific manufacturing knowledge for this process – was the ideal business solution to meet customer demand.
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The 300,000 pounds Grant for Business Tegal sold to OEM Group the Tegal 900ACS, Investment (GBI), which was awarded by the 980ACS, 6500 HRe- and 6500 Spectra NWDA, is part of ‘Solutions for Business’, the series Thin Film Etch products, along with the UK Government’s package of publicly-funded Sputtered Films Endeavor and AMS PVD series business support designed to help companies products, intellectual property and process start and grow. know-how. OEM Group will bring continued global support to existing Tegal Thin Film Etch “Expanding our TMG capacity not only and PVD customers, and will integrate these draws on our Bromborough facility’s core world class technologies into their LEGENDS competencies, but also reinforces Sigma- offering, which already includes the MRC Aldrich’s overall strategy of leveraging Eclipse (PVD), AG Heatpulse (RTP), Lam proprietary technologies and capabilities into AutoEtch (Etch), and Varian Sunset (Implant) new, fast growing market segments, thus platforms. differentiating ourselves and our materials offerings through technical innovation,” “OEM Group is the perfect company for these commented Dr. Geoff Irvine, VP, Business Tegal products, which represent an important Development, SAFC Hitech. “This investment legacy in semiconductor capital equipment is expected to accelerate the delivery of TMG and process technology,” said Thomas Mika, to a growing market position and reinforce President and CEO, Tegal Corporation. “We are our position as a leading global manufacturer pleased that we have been able to place these and distributor for the growing LED market products and many of the skilled employees worldwide, as well as create jobs in the area, associated with them in a company whose which is positive news given the current business model is built on the continued sales, economic climate.” service and support of late life cycle technology into new and existing customers and markets.” For further information regarding SAFC Hitech’s “We are honored to continue providing Tegal’s portfolio of products and services, go to www. world class Thin Film Etch solutions to the safchitech.com. market; and, with the addition of the Sputtered Films technologies to our own PVD focus, we believe we will have an unmatched product Tegal Sells Thin Film Etch and PVD Assets offering,” said Wayne Jeveli, President of OEM to OEM Group Group. “Over the course of more than 30 years, 2010-03-24 Tegal’s brand has symbolized innovation,
quality and customer focus. We believe these Tegal Retains and Will Continue to Sell and attributes will continue on for many years at Support Its Deep Reactive Ion Etch (DRIE) OEM Group.” Systems Globally While Continuing to Pursue Strategic Alternatives for the Company The sale of the Thin Film Etch and PVD product lines to OEM Group represents a significant Tegal Corporation, an innovator of specialized step in Tegal’s execution of its previously production solutions for the fabrication of announced pursuit of strategic alternatives advanced MEMS, power ICs and optoelectronic for the benefit of Tegal’s stockholders. While devices, today announced that it has sold continuing to evaluate strategic alternatives its legacy thin film etch and physical vapor for the Company, Tegal intends to continue to deposition (PVD) product lines to OEM Group, sell and support its full range of Deep Reactive Inc. for aggregate consideration of up to $3 Ion Etch (DRIE) systems that it acquired from million, of which a maximum of $1 million is Alcatel Micro Machining Systems (AMMS) in subject to OEM Group’s achievement of certain September, 2008. Tegal’s DRIE systems are target sales levels.
April/May 2010 www.compoundsemiconductor.net 93 news digest ♦ compound semiconductor critical enablers for etching silicon and dielectric Ideally, the highest solar cell efficiency is films found in the MEMS, bio-tech, power IC, achieved by having a wide range of band gaps optoelectronic, and 3D-IC markets. Tegal DRIE that matches the entire solar spectrum, said tools are employed in MEMS foundries and Ning, a professor in the School of Electrical, commercial high volume manufacturing lines Computer and Energy Engineering, a part of world-wide, and can be found in numerous ASU’s Ira A. Fulton Schools of Engineering. academic and commercial research and development laboratories throughout the world. He said that in LED lighting applications, more available band gaps means more colors can be emitted, providing more flexibility in color engineering or color rendering of light. New alloys key to efficient energy and lighting For example, different proportions of red, green 2010-03-23 and blue colors would mix with different white colors. More flexibility would allow white color Nanowire advances promise improved light- to be adjusted to suit various situations, or emitting diodes and solar-energy generation individual preferences.
A recent advance by ASU researchers in Similarly, Ning said, detection of different colors developing nanowires could lead to more requires semiconductors of different band efficient photovoltaic cells for generating energy gaps. The more band gaps that are available, from sunlight, and to better light-emitting diodes the more information can be acquired about (LEDs) that could replace less energy-efficient an object to be detected. Thus, all of these incandescent light bulbs. lighting applications can be improved by having Electrical engineers Cun-Zheng Ning and Alian semiconductors with a wide range of band Pan are working to improve quaternary alloy gaps. semiconductor nanowire materials. The researchers said the hurdle is that every Nanowires are tens of nanometers in diameter manmade or naturally occurring semiconductor and tens of microns in length. Quaternary has only a specific band gap. alloys are made of semiconductors with four elements, often made by alloying two or more One standard way to broaden the range compound semiconductors. of band gaps is to alloy two or more semiconductors. By adjusting the relative Semiconductors are the material basis for proportion of two semiconductors in an alloy, technologies such as solar cells, high-efficiency it’s possible to develop new band gaps between LEDs for lighting, and for visible and infrared those of the two semiconductors. detectors. But accomplishing this requires a condition One of the most critical parameters of called lattice constant matching, which requires semiconductors that determine the feasibility similar inter-atomic spaces between two for these technologies is the band gap. The semiconductors to be grown together. band gap of a semiconductor determines, for example, if a given wavelength of sun “This is why we cannot grow alloys of arbitrary light is absorbed or left unchanged by the compositions to achieve arbitrary band semiconductor in a solar cell. gaps,” Ning said. “This lack of available band gaps is one of the reasons current solar cell Band gap also determines what color of light an efficiency is low, and why we do not have LED LED emits. To make solar cells more efficient, lighting colors that can be adjusted for various it’s necessary to increase the range of band situations.” gaps.
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In recent attempts to grow semiconductor the design and fabrication of such solar cells. nanowires with “almost” arbitrary band gaps, the research team led by Ning and Pan, an Similarly, the new quaternary alloy nanowires assistant research professor, have used a new with large wavelength span can be explored for approach to produce an extremely wide range color-engineered light applications. of band gaps. The researchers have demonstrated that color They alloyed two semiconductors, zinc control through alloy composition control can sulfide (ZnS) and cadmium selenide (CdSe) be extended to two spatial dimensions, a step to produce the quaternary semiconductor closer to color design for direct white light alloy ZnCdSSe, which produced continuously generation or for color displays. varying compositions of elements on a single The team’s research was initially supported by substrate (a material on which a circuit is Science Foundation Arizona and by the U.S. formed or fabricated). Army Research Office. For more information, Ning said this is the first time a quaternary see the research group’s Web site at http:// semiconductor has been produced in the form nanophotonics.asu.edu of a nanowire or nanoparticle.
By controlling the spatial variation of various elements and the temperature of a substrate Chevron Tests Emerging Solar Technologies (called the dual-gradient method), the team in Central California 2010-03-22 produced light emissions that ranged from 350 to 720 nanometers on a single substrate only a few centimeters in size. Former Bakersfield Refinery Converted to Next- Generation Solar Demonstration Facility The color spread across the substrate can be controlled to a large degree, and Ning said Chevron Corporation (NYSE: CVX) today he believes this dual-gradient method can be announced the start of Project Brightfield, more generally applied to produce other alloy a demonstration of next-generation solar semiconductors or expand the band gap range energy technologies in Bakersfield, California. of these alloys. The project, created on the site of a former Chevron refinery, will evaluate seven emerging To explore the use of quaternary alloy materials photovoltaic technologies to help determine for making photovoltaic cells more efficient, his the potential application of renewable power at team has developed a lateral multi-cell design other company-owned facilities. combined with a dispersive concentrator. The former refinery site has been repurposed The concept of dispersive concentration, or to test the performance of six emerging thin-film spectral split concentration, has been explored technologies and one emerging crystalline- for decades. But the typical application uses a silicon photovoltaic technology, which were separate solar cell for each wavelength band. provided by independent solar companies. With the new materials, Ning said he hopes Chevron Tests Solar Technologies to build a monolithic lateral super-cell that contains multiple subcells in parallel, each optimized for a given wavelength band. The multiple subcells can absorb the entire solar spectrum. Such solar cells will be able to achieve extremely high efficiency with low fabrication cost. The team is working on both
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various conditions and compare it against a benchmark solar technology — a brand of commercially available solar photovoltaic technology — that has also been installed on the site.
Project Brightfield is Chevron’s second completed project that repurposes an existing asset to integrate renewable power. The first was a wind farm on a former Texaco Download Video Transcript (72 KB) refinery site near Casper, Wyoming, where 11 wind turbines generate 16.5 megawatts of “By bringing together seven emerging solar power. A third project — a concentrating solar technologies, Project Brightfield represents photovoltaic installation at a Chevron Mining one of the most comprehensive solar energy Inc. facility near Questa, New Mexico — is tests of its kind and is an innovative approach scheduled to be completed by the end of 2010. to evaluating new technologies,” said Des King, president of Chevron Technology Chevron is one of the world’s leading integrated Ventures, the division of Chevron U.S.A. Inc. energy companies, with subsidiaries that that identifies, evaluates and demonstrates conduct business worldwide. The company’s emerging technologies. “Testing competing success is driven by the ingenuity and technologies side by side means that we can commitment of its employees and their better understand their potential application at application of the most innovative technologies other Chevron facilities.” in the world. Chevron is involved in virtually every facet of the energy industry. The The 7,700 solar panels on the 8-acre site will company explores for, produces and transports generate approximately 740 kW of electricity. The produced power will be directed to the local crude oil and natural gas; refines, markets and distributes transportation fuels and other utility grid as well as to Chevron’s oil production energy products; manufactures and sells operations at the Kern River Field. petrochemical products; generates power and “Chevron has operated in the San Joaquin produces geothermal energy; provides energy Valley for more than a century. Throughout efficiency solutions; and develops the energy this time, our engineers have developed resources of the future. Chevron is based in breakthrough technologies that have helped San Ramon, Calif. More information about make us the leading oil and gas producer in the Chevron is available at www.chevron.com. state,” said Bruce Johnson, vice president of Chevron’s San Joaquin Valley Business Unit. “The Brightfield solar demonstration facility is a CyOptics 500Gbps TOSA/ROSA Claims New clear example of Chevron’s efforts to find ways Record For Photonic Integration to integrate innovative technologies into our 2010-03-22 business.” CyOptics Inc. today announced the successful The companies demonstrating thin-film demonstration of a claimed industry first technologies are Abound Solar, MiaSolé, ½ Terabit/s (500Gbps) Transmit Optical Schüco, Solar Frontier, Sharp, and Solibro, Subassembly (TOSA) and Receive Optical while the crystalline-silicon photovoltaic Subassembly (ROSA) technology is provided by Innovalight. Each solar company can access data about its CyOptics Inc., a designer and manufacturer of technology, find out how well it performs in Photonic Integration Circuits, today announced
96 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest the successful demonstration of a claimed (InP) device technology for the fabrication industry first ½ Terabit/s (500Gbps) Transmit of the cutting edge 40G EML array and Optical Subassembly (TOSA) and Receive 40G PIN detectors, as well as its highly Optical Subassembly (ROSA) targeted at next automated hybridization and planar packaging generation Ethernet applications. The Photonic platforms for the assembly of the TERAPIC Integrated Circuit (PIC) components leverage a components. The PLCs for this demonstration combination of monolithic and hybrid integration used Silicon on Insulator (SOI) technology to deliver 500Gbps in a single pair of TOSA and designed and fabricated by Kotura, CyOptics’ ROSA. partner in the ATP/NIST project. For the future commercialization of the TERAPIC technology, While the IEEE is expected to ratify a standard CyOptics intends to also leverage its in-house for 100G Ethernet by the middle of 2010, initial Silica PLC platform. industry and standard body discussions have already started on how to make the next leap to The transmission tests were performed over 1 Terabit to meet the ever-increasing demand 2km of SMF with each channel tested at for optical bandwidth. The 500G demonstration 40Gbps. For the demo, a commercial SOA was marks the successful completion of the 2nd used in front of the ROSA to boost the signal. year milestone as part of a three-year project Each channel was tested to be error free to funded by the U.S. Commerce Department’s National Institute of Standards and Technology (NIST) Advanced Technology Program (ATP) Veeco Announces 8th Annual International to develop the next generation Terabit Photonic Nanoscience Conference Integrated Circuit (TERAPIC™). The final 2010-03-22 project goal targets the demonstration of optical laser and receiver components for transmission Veeco Instruments Inc., provider of atomic speeds of up to 1 Terabit/s (1,000Gbps) by the force microscopes (AFMs) to the nanoscience end of 2010. community, announced today that it will host the “Seeing at the Nanoscale VIII” conference The TOSA encompasses 12 electro-absorptive at the Congress Center, Basel, Switzerland, modulated lasers (EMLs) with wavelength August 30-September 1, 2010, as part of the channels from 1270nm to 1380nm on a 10nm 550th anniversary celebrations of the University channel grid. The lasers are grouped in three of Basel. (3) arrays with each array monolithically integrating four (4) EMLs. Each EML has a In its eighth year, the conference has a solid typical small-signal bandwidth of >30GHz reputation for providing an optimum forum for allowing non-return-to-zero (NRZ) operation academic and industrial scientists to share at 43Gbps. The three EML arrays are flip-chip information and exchange ideas on a wide bonded to a planar lightguide circuit (PLC), variety of cutting-edge nanotechnology topics, which serves as the mounting platform and ranging from novel imaging approaches and provides the optical multiplexer (MUX) function. unique material characterization to combining The ROSA couples the signal through an AFM with other technologies, such as confocal optical PLC-based de-multiplexer (DeMux) microscopy and Raman spectroscopy. to twelve (12) high-speed PIN detectors with a 3dB bandwidth of more than 50GHz “Nature is the best example of a system and a continuous wave (CW) responsivity functioning on the nanometer scale, where of 0.8A/W. The current package dimensions the involved materials, energy consumption of the TOSA are 22mm x 22mm, and the and data handling are optimized,” commented ROSA 30mm wide x 26mm long. CyOptics Conference Chair Christoph Gerber, Director leverages its high speed Indium Phosphide for Scientific Communication, NCCR, Institute
April/May 2010 www.compoundsemiconductor.net 97 news digest ♦ compound semiconductor of Physics at the University of Basel. “The the close proximity of the conference location emergence of the STM and AFM led to a to the birthplace of SPM technology,” remarked paradigm shift in the understanding and Chanmin Su, Director of Technology at Veeco. perception of matter at its most fundamental level, and opened the doors to the nanoworld. Abstracts for oral and poster presentations Today these technologies are still making a are now being accepted at www.veeco.com/ tremendous impact on disciplines ranging from nanoconference. physics and chemistry through information Conference sessions for 2010 include: technology, spintronics, quantum computing, and molecular electronics, all the way to life Session I: Nanobio EUR Molecular Machines sciences. According to the Web of Science, and Systems over 7,000 AFM-related papers were published Invited Speakers: in 2009 alone, bringing the total to more than Hermann Gaub (Ludwig-Maximilians Universität 80,000 since its invention. As a consequence, München, Germany) revolutionary concepts have stimulated a wide Zhifeng Shao (Shanghai Jiaotong University, spread of new technologies in recent years. China) Veeco’s annual Seeing at the Nanoscale conference is therefore a must in the agenda of Session II: Nanobio EUR Cells and Tissues every nanoscientist.” Invited Speakers: Alan Grodzinsky (MIT, USA) “I think we can all appreciate how the traditional Michael Sheetz (Columbia University, USA, and boundaries of scientific disciplines are blurred the National University of Singapore) at the nanoscale,” added Conference Co- Session III: Nanomaterials EUR Properties: Chair Roderick Lim, Argovia Professor for Electric, Magnetic, Chemical, Thermal, Optical. Nanobiology, Biozentrum and the Swiss Invited Speakers: Nanoscience Institute at the University of Julie MacPherson (University of Warwick, Basel. “Not just in the methods of visualizing United Kingdom) and manipulating molecular processes, but Fraser Stoddart (Northwestern University, USA) even more so in how we conceive of new concepts and solve problems. With this in mind, Session IV: Nanomechanics Christoph and I are committed to bringing out Invited Speakers: the synergies that exist between the physical Greg Meyers (Dow Chemical, USA) and biological sciences in our planning of Ernst Meyer (University of Basel, Switzerland) Seeing at the Nanoscale VIII in Basel. We are particularly honored that several of the leading Session V: Advances in SPM Instrumentation: experts who practice such interdisciplinarity New Instrument Development, High Resolution, have agreed to attend. It is also fantastic Combination of AFM with Other Technologies that our enthusiasm is shared by our joint Invited Speakers: organizers: Veeco, the Swiss Gerhard Meyer (IBM Zürich, Switzerland) Nanoscience Institute, the Biozentrum, and the Markus B. Raschke (University of Washington, M.E. Müller Foundation of Switzerland. I do USA) urge folks from all walks of science to join us In conjunction with the 2½-day conference, for this remarkable event.” Veeco will host a half-day training course The “Seeing at Nanoscale conference covering a variety of AFM techniques, including continues the tradition of building the SPM the new, groundbreaking ScanAsyst(TM) community in leading technology innovation and PeakForce QNM(TM) Imaging Modes. and applications. This year we are excited by Together, these proprietary advances provide the attendance of distinguished speakers and unique capabilities for AFM quantitative
98 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest analysis and ease of use. providers and telecom companies to compete or combine services to gain market share and More details on the sessions, abstract better serve subscribers. This move toward submissions, and invited speaker presentations convergence means that to achieve success, may be found at http://www.veeco.com/ system operators need to add low-cost, high- nanoconference. bandwidth technologies to their networks, a process made easier and more efficient with TriQuint TriAccess products. The name TriQuint’s TriAccess Product Line Supports ‘TriAccess’ is derived from the three ways Faster Convergence of Telecommunications TriQuint products assist CATV engineers to Services in China create improved broadband 75-Ohm access: 2010-03-21 Better efficiency, better linearity and smaller- size devices for CATV / FTTH systems. TriQuint’s TriAccess CATV / FTTH Products Offer Integrated Solutions That Can Lower “TriQuint’s TriAccess on-chip linearized Costs for More Efficient, Competitive Networks solutions have been shown to help CATV network manufacturers develop more efficient TriQuint Semiconductor, today announced products that use less power. At the same that its complete TriAccess™ line of cable TV time TriQuint products enable higher-speed (CATV) and Fiber to the Home (FTTH) products connections, or a larger service area for supports the China State Council ‘Three into converged video, voice and high-speed One’ initiative for competitive, world-class internet. TriAccess amplifiers and filters provide high-speed broadband connectivity. TriQuint’s end-to-end solutions for all major segments of TriAccess products increase efficiency and the 75-Ohm market,” said Ting Xiong, TriQuint’s lower overall costs for Edge QAM / DOCSIS® Country Manager for China. 3.0, FTTH, cable TV infrastructure and TriQuint’s TriAccess devices for Edge QAM / subscriber premises cable systems. DOCSIS® 3.0, CATV infrastructure, subscriber “Connect the Digital World to the Global (home) amplification and Fiber to the Home Network” (FTTH) give manufacturers and product designers simplified RF connectivity that supports a large variety of wideband services such as HDTV, high-speed data and Video on Demand (VOD).
Edge QAM / DOCSIS® 3.0 Amplifiers: The TriAccess product portfolio is designed to facilitate high-speed wideband CATV connections for a more efficient use of the cable TV spectrum. These products include the world’s first on-chip linearized amplifier: TriQuint’s TAT7467H, which is designed with reliable GaAs pHEMT technology and offers 40%+ efficiency for lower operational costs and enhanced competitiveness. TriQuint TriAccess The Chinese government’s support for telecom, products, including TGA2807-SM for slightly television and internet convergence increases higher output levels, excel at meeting stringent the opportunity for traditional CATV network DOCSIS® 3.0 specifications. operators, broadcasters, internet service
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competitive advantage: the ability to increase network performance to meet the new home architecture standards desired by leading MSOs.
TriQuint’s TriAccess line, including low power consumption on-chip linearized ICs, low noise receivers and stable home amplifiers, will be exhibited at the China Content Broadcasting Networks (CCBN) conference in Beijing (22-25 Fiber to the Home (FTTH) & RF over Glass March 2010), Booth 1B017. (RFoG): To better compete, incumbent cable operators and new market entrants need Samples and evaluation boards are available solutions that effectively provide HDTV, digital for TriQuint’s TriAccess products now in voice and high-speed internet by leveraging release. Visit the website at: http://cn.triquint. existing network equipment and cable modems. com or www.triquint.com for more information The most effective way to deliver the highest and data sheets. Contact TriQuint Product bandwidth capability over existing networks is Marketing for details: [email protected]. with FTTH, including systems using RFoG (RF over Glass); these solutions are particularly TriQuint Semiconductor is a leading beneficial for new construction and network manufacturer of gallium arsenide, gallium upgrades. TriQuint’s TriAccess line includes nitride (GaN), surface acoustic and bulk products like the TAT6254D that are specifically acoustic wave (SAW / BAW) products designed to support the needs of the RFoG including packaged devices and monolithic specification. microwave integrated circuits (MMICs). Its high- performance 75-Ohm products include drop CATV Infrastructure: TriQuint’s new TriAccess amplifiers, push-pull and power doubler MMICs, portfolio now offers solutions at the die, SAW filters, multi-chip modules, ESD protectors packaged die and multi-chip module levels. and highly integrated devices for CATV / FTTH The new design of the high-gain TAT8858 applications. TriQuint also serves wireless base (integrated push-pull amplifier), combined with station and mobile device markets (handsets, TriQuint’s TAT8857 (integrated power doubler), WLAN, GPS, WiMAX) with a wide range of are ideal for CATV infrastructure applications, GaAs, GaN, SAW and BAW discrete devices providing the economy of GaAs-based design and integrated modules and superior efficiency performance.
Home / Subscriber Amplifiers: The TriAccess Vice President Joe Biden Visited Cree to line of high performance ICs (drop amplifiers) Discuss Green Technology and American for subscriber applications offer multiple gain Innovation levels that cost-effectively enable central 2010-03-19 gateway and multi-room architectures as well as MOCA (Multimedia over Coax Alliance) and Vice President Met with Cree CEO Chuck Ethernet over coax applications. TriQuint’s new Swoboda and Employees TAT7430B and TAT7427 provide increased gain, (22.5 dB and 18.0 dB, respectively), to Vice President Joe Biden visited Cree (Nasdaq: complement the TAT7461 16 dB product; all CREE) to discuss the Obama administration’s devices meet stringent distortion requirements. commitment to fighting for issues important TriQuint’s CATV subscriber / home solutions to America’s middle class families, including empower manufacturers with a decisive, creating well-paying manufacturing jobs and
100 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest building the clean energy economy. Cree, laser systems to manufacturers in China and based in Durham, North Carolina, is a market- throughout the world.” leading manufacturer of LED (light-emitting diode) products.
Vice President Biden toured Cree’s facilities NYSERDA Announces $1.5 million Award to with Chuck Swoboda, chairman and chief Establish Clean Energy Business Incubator executive officer of Cree, and spoke with Program 2010-03-19 employees about the benefits of working for a green technology company and their concerns about the economy. College of Nanoscale Science and Engineering secures additional $1.5 million in private “The ongoing support from the Obama investment and attracts Magnolia Solar administration is important as we promote the Corporation as first corporate partner for iCLEAN initiative value of energy efficiency and sustainability in today’s economy,” said Swoboda. “Cree is creating American clean-tech jobs right now, as The New York State Energy Research we continue to lead the LED lighting revolution.” and Development Authority (NYSERDA) is providing $1.5 million to establish a clean energy incubator program at the College of Nanoscale Science and Engineering (CNSE) of Chinese patent for JPSA the University at Albany that will help growing 2010-03-19 companies develop and commercialize clean energy technologies and create jobs in the JPSA awarded laser scribing patent in China Tech Valley, it was announced today at the UAlbany NanoCollege. The announcement J. P. Sercel Associates Inc., (JPSA) have was made by NYSERDA President and CEO announced that China P.R. has awarded a Francis J. Murray, Chancellor Nancy Zimpher, patent to JPSA covering the unique laser and CNSE Senior Vice President and CEO Dr. scribing technology used by JPSA Laser. The Alain Kaloyeros. same process has been previously patented by JPSA in the USA, Taiwan, Korea, and Japan.
JPSA’s patented scribing technology permits an industry-leading 2.5um kerf, which provides more die per wafer, higher throughput, less debris, minimized heat affected zone (HAZ), and faster return on investment (ROI). The ChromaDice system significantly increases throughput and yield.
In announcing the new China P.R. patent, Jeffrey Sercel, JPSA’s Chief Technology The NYSERDA funding will establish the Incubators for Collaborating and Leveraging Officer, said, “This patent protects our growing presence in China’s laser scribing market. Energy and Nanotechnology (iCLEAN), JPSA has long been in the forefront of spearheaded by CNSE’s Energy and advancing new laser techniques for LED and Environmental Technology Applications Center semiconductor manufacturing, and we look (E2TAC). CNSE has attracted an additional forward to providing more of our high precision $1.5 million in private investment to support
April/May 2010 www.compoundsemiconductor.net 101 news digest ♦ compound semiconductor the activities of iCLEAN, as well as the to drive economic investment and growth, program’s first corporate partner. Magnolia particularly in the most critical sectors of Solar Corporation, a leading developer of our economy, including alternative energy nanostructure-based thin film solar cells, is technologies.” partnering with CNSE’s E2TAC on advanced research to enable the development of high- “This critical investment in the iCLEAN initiative efficiency, low-cost solar cells. further demonstrates NYSERDA’s recognized leadership in building a robust and vibrant clean Over the next four years, iCLEAN expects energy sector in New York State,” said Dr. Alain to incubate 25 successful companies, with Kaloyeros, Senior Vice President and CEO the potential for creating 125 new jobs and of CNSE. “This funding will enable advanced investing nearly $125 million into the regional research at the UAlbany NanoCollege that economy. is essential for the commercialization of innovative green energy technologies, and also “With its wealth of talent and clean energy provide opportunities to attract alternative and expertise, the College of Nanoscale Science renewable energy companies and green collar and Engineering of the University at Albany is jobs to New York.” an ideal location for a new business incubator that will help early-stage businesses grow, iCLEAN partners will have access to CNSE’s create jobs in Tech Valley, and compete in the state-of-the-art laboratories and cleanroom national economy,” said Francis J. Murray Jr., facilities, gain valuable networking opportunities President and CEO of NYSERDA. “The funding through regional and national partnerships we announce today represents Governor to raise funding through venture capital, and David Paterson’s commitment to invest in receive comprehensive and professional the infrastructure that will help innovators services. In addition, the iCLEAN program will develop their products, take their ideas to the host an Entrepreneurial Development Series on market, and expand New York’s clean energy clean energy to train and transition corporate industries.” executives into the growing clean energy industry. SUNY Chancellor Nancy L. Zimpher praised NYSERDA, CNSE and Magnolia Solar “With vital support from NYSERDA, the iCLEAN Corporation for their collaboration on iCLEAN program will allow CNSE’s E2TAC to help saying, “This partnership leverages our accelerate the development of clean energy collective strengths in developing the economy technologies that are important for New York’s while focusing on sustainable, low-cost energy. environmental and economic future,” said Dr. It is fitting that we are spending the day at the Pradeep College of Nanoscale Science and Engineering as we begin to finalize our strategic plan - which is all about the revitalization of New Haldar, Director of CNSE’s E2TAC. “We are York’s economy and the quality of life of our particularly pleased to support the growth of citizens.” emerging alternative energy companies, as evidenced by our partnership with Magnolia “The world-class educational and research Solar, and look forward to working with our portfolios at UAlbany’s College of Nanoscale partners at the Hudson Valley Center for Science and Engineering will be further Innovation to enable additional collaborations in enhanced through this vital funding from the future.” NYSERDA,” said University at Albany President George M. Philip. “The creation of “We are delighted to enter into this partnership this innovative clean energy incubator also with the College of Nanoscale Science and illustrates the NanoCollege’s unique ability Engineering, through which we gain access
102 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest to world-class intellectual and technological Professor Kaloyeros. NYSERDA funds will capabilities that are unmatched in the world,” leverage assets that already exist at the said Dr. Ashok K. Sood, President and CEO College of Nanoscale Science and Engineering of Magnolia Solar Corporation [Stock Symbol: and allow emerging companies to grow, flourish MGLT]. “We are excited to begin working with and create new clean jobs right here in the CNSE and NYSERDA to bring our technology Capital Region.” for low cost, high efficiency thin-film based solar panels to the marketplace more quickly. Congressman Paul Tonko said, Accelerating time to market with CNSE and “Congratulations to the State University of New NYSERDA support is necessary for our future York, the College of Nanoscale Science and success. We look forward to being a part of Engineering and NYSERDA for bringing this New York’s fast-growing clean energy sector.” forward thinking project to reality. This incubator will help bring cutting edge, innovative ideas The iCLEAN program is a partnership between and technologies from the drawing board CNSE’s E2TAC and the Hudson Valley Center to the marketplace, and create the thriving for Innovation (HVCFI) in Kingston. The businesses of tomorrow. This is great news partnership in this NYSERDA-funded initiative for our region, which is rapidly positioning will seek to expand existing incubator programs itself to be one of the leaders in our emerging at these facilities and create a new, larger innovation economy.” incubation center at the NYSERDA-owned Saratoga Technology + Energy Park® (STEP®) Assembly Majority Leader Ronald Canestrari in Malta. said, “This multi-million dollar green initiative is the direct result of the innovative and The iCLEAN is the sixth clean energy business collaborative spirit between NYSERDA and incubator created by NYSERDA over the past SUNY’s College of Nanoscale Science and year, and the third to be located on a SUNY Engineering. It’s yet another example of campus. The other incubators funded last the exciting, cutting edge technology that is year are located at the University at Buffalo, simultaneously transforming our environment Rochester Institute of Technology, The Tech and our economy. Chancellor Zimpher, Dr. Garden in Syracuse, and the Polytechnic Kaloyeros, Mr. Murray and all involved are to Institute of New York University in Brooklyn. be commended for their continued leadership Last month, NYSERDA announced an and vision.” incubator program located on the Stony Brook University campus. Assemblyman Tim Gordon (I)-Bethlehem said, “We know that New York State is moving Tech Valley is a 19-county region that towards greater reliance on renewable sources encompasses the Capital Region, parts of the of energy and green technology. The question North Country, Hudson Valley, and Mohawk is; will we be buying the new energy systems Valley. from overseas, or manufacturing the systems The following statements were provided in for export here in New York? The initiative support of today’s announcement: between NYSERDA and Albany Nanotech is exactly what we need to be doing, if New York U.S. Senator Kirsten Gillibrand said, “This is to remain the Empire State.” announcement is yet another indication that New York State is the premier location for Albany County Executive Mike Breslin said, high tech and clean energy. The partnership “Today’s announcement highlights another between NYSERDA and the University of the many opportunities that exist in our at Albany is a testament to the ingenuity region for economic growth. The incubator and leadership of Chancellor Zimpher and program is an exciting, cutting-edge melding
April/May 2010 www.compoundsemiconductor.net 103 news digest ♦ compound semiconductor of economic development, clean energy and centres—literally around the clock—to deliver a nanotechnology, which will help innovative breakthrough product to market.” companies to grow and create jobs for the entire region. The GE/PrimeStar product is being developed at PrimeStar’s headquarters in Arvada, Colo. A team of PrimeStar technologists with GE announce CdTe thin film plans more than 100 years of combined thin film 2010-03-19 deposition expertise is working closely with GE researchers, who are focused on several GE plan a global approach to CdTe thin film key areas in order to achieve best-in-class solar modules technology. These include device efficiency, reliability, production and installation costs and manufacturability. Hundreds of technologists in Germany, China, India and the United States are working on GE solar technologies today— addressing these challenges in the following ways:
The team in Munich, at the heart of the global solar industry, is utilizing world-class indoor and outdoor solar system test facilities where they study finished module performance to identify and address degradation mechanisms and packaging issues. In addition to the focus on With the race on in earnest to have the most the module itself, this team also brings deep efficient, low-cost solar module on the market, expertise at the system level. This allows them GE announced it is focusing its research and to define system-level optimized features and development efforts on thin film photovoltaic metrics for the module. (PV) technology in conjunction with PrimeStar Solar Inc., the startup firm in which GE is In China, where most of the world’s CdTe raw a majority investor. Working closely with materials are found, researchers at GE’s China PrimeStar technology experts, the company is Technology Centre in Shanghai are focused bringing to bear the full scale of its four Global on CdTe materials and the impact they have Research operations to address each of the on device performance. Improving material challenges required to bring a new product to quality and developing advanced materials market. characterization techniques are key topics being addressed by the Shanghai team. “After having completed an exhaustive survey of the PV landscape, we determined that thin In India, GE is leveraging extensive modelling films were the optimum path for GE,” said capabilities at its John F. Welch Technology Danielle Merfeld, GE’s solar R&D leader. Centre in Bangalore. Unlike the exclusively “Specifically, the CdTe technology from experimental approach favored by many in this PrimeStar has great potential. Bringing together field, GE believes that dramatic improvements world-class materials expertise, unique in the device performance and reliability will materials and systems modelling and design be realized through a deeper understanding of capabilities and state-of-the-art indoor and the materials and basic physics of the device. outdoor solar testing facilities, GE researchers The team in Bangalore is tasked with building are innovating across our four global research comprehensive models to help guide advanced device design.
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Finally, GE’s research team in Niskayuna, to demonstrate its technological leadership. N.Y., is working on all facets of CdTe module With the introduction of our new innovative development, including material growth, technologies in our Next Generation Platform, device development and robust process the AIX G5 HT, we provide a revolutionary development. Their technical expertise cuts new reactor design to our customers that across diverse fields such as surface chemistry, enables more than the doubling of productivity laser processing and plasma physics. compared to the previous MOCVD generation.“ Equally diverse is their product development experience, which they have derived from GE’s For further information on AIXTRON AG please other technology-focused businesses such as consult our website at: www.aixtron.com. Healthcare, Lighting and Batteries. GE currently provides a range of utility-scale solar solutions, including smart grid power Dowa Succeeds in Practical Application for electronics and pre-packaged systems. GE’s Mass Production of a Deep Ultraviolet LED Brilliance solar inverter offers reliable power Chip Having the World`s Highest Output conversion technology derived from its industry- 2010-03-18 leading 1.5 megawatt wind turbine. Dowa Electronics Materials Co., Ltd., a subsidiary of Dowa Holdings Co., Ltd., has Multiple tool order for AIXTRON’s New successfully developed practical applications Generation AIX G5 HT System for a deep ultraviolet LED that generates 2010-03-19 shorter wavelengths than the ultraviolet LEDs currently available on the market. Dowa AIXTRON AG today announced that Tekcore Electronics Materials has begun to offer Co. Ltd of Taiwan has placed a multiple order samples to develop a market. for AIXTRON’s latest MOCVD System, the AIX G5 HT, to expand their manufacturing capacity The deep ultraviolet LED chip is expected to of high brightness light emitting diodes (HB- be used in a wide range of fields, including LEDs). resin cure, adhesion, drying, medical treatment, The order was received, shortly after AIXTRON analyses, photo catalysts, water purification, and sterilization, and is attracting the attention announced the launch of its next generation of companies worldwide. Compared with MOCVD systems AIX G5 HT and CRIUS® II. the existing mercury light source, the LED AIXTRON is very pleased with the success of chip is expected to diversify wavelengths, these new system generations, having already create mercury-free light sources, and have received multiple purchase orders for tools of a longer life. Because of a lack of suppliers both technologies. able to mass-produce deep ultraviolet LEDs, Based on the proven Planetary Reactor® the market is immature. However, if a supply design, the AIX G5 HT features the largest system is established, we expect a market wafer capacity available (56x2/14x4/8x6inch) worth tens of billions of yen will emerge. in combination with revolutionary new reactor design features providing highest productivity The deep ultraviolet LED consists of a nitride and layer quality by allowing very high growth semiconductor and has been very difficult rates at high process pressures. The tool to manufacture. No manufacturers have capabilities also include fully automated therefore succeeded in mass-production. operation and advanced fab integration. Dowa Electronics Materials has succeeded in developing a practical application for a Dr. Rainer Beccard, Vice President Marketing deep ultraviolet LED chip that emits light at AIXTRON explains: “AIXTRON is committed
April/May 2010 www.compoundsemiconductor.net 105 news digest ♦ compound semiconductor with wavelengths of 300 nm to 350 nm. The to the Canadian Space Agency (CSA) as part company created an LED with the world’s of its corporate strategy to extend its core highest output power in wavelengths by capabilities in next generation Micro Electronic combining its own AIN template (high-quality Modules. This delivery is the latest step in AIN film growing on the sapphire substrate) BreconRidge’s goal to become a key partner technology, and the newly obtained ultraviolet with the Aerospace and Defense industries. LED epi growth technology from Palo Alto Prior milestones include collaborative design Research Center (PARC) and RIKEN. The and manufacturing contributions to programs currently available sample has achieved an involving defense and aerospace radars, optical output power of 1.4mW with 20mA in radio-astronomy systems and defense wavelengths of 320nm to 350nm. communication systems.
Dowa Semiconductor Akita Co., Ltd., a “Emerging technologies like Gallium-Nitride subsidiary manufacturer of Dowa Electronics require an innovative approach in all aspects Materials, is creating prototypes and is striving of product design and manufacturing.” to start mass production. It will seek to increase commented John Pokinko, VP Engineering at the output power while at the same time BreconRidge. “We are aggressively pursuing developing deep ultraviolet LED chips that will all opportunities to further our expertise in emit light with shorter wavelengths. applying these new technologies in advanced RF and microelectronic solutions. Successful Dowa Electronics Materials has the ability to completion of the CSA GaN packaging contract manufacture many types of GaAs products represents a key stepping stone in this and has more than 20 years of experience strategy.” in the red and infrared LED business. The company has also in recent years been rapidly Gallium-Nitride leads an emerging class of enhancing the Iineup of nitride semiconductors. semiconductor technologies designed to In the first stage, it has launched a nitride tackle the RF challenges of next-generation electronic device cellular network base stations and satellite communications systems. Compact packaging (HEMT) epi for high-frequency waves used at and stringent linearity requirements challenge next-generation mobile phone base stations, today’s designers to meet heat dissipation etc. and for power semiconductors. The deep and bandwidth allocation objectives. GaN ultraviolet LED chip is a nitride product in the based electronics offers the potential to cost- second stage. With the introduction of this effectively address these challenges. product Dowa aims to bolster the base of its semiconductor business. The National Research Council’s Canadian Photonics Fabrication Centre (NRC-CPFC) was responsible for fabricating the GaN die used BreconRidge Address`s Future Gallium- in this project at their world-class industrial Nitride Based Programs & Technologies. grade facility. “Few companies in the Electronic 2010-03-18 Manufacturing Services sector have the capabilities to assemble and package Gallium- BreconRidge Expands Monolithic Microwave Nitride electronics.”, observed Cyril McKelvie, Integrated Circuit (MMIC) Assembly President at BreconRidge. “Being able to Capabilities to Address Future Gallium-Nitride deliver these first modules is a reflection of our Based Programs and Technologies. desire, skills and capabilities to address the emerging needs of the Aerospace and Defense BreconRidge Corporation packaged and sectors. Ultimately, our customers will benefit shipped over 90 Gallium-Nitride (GaN) modules from our accumulated experience with Gallium-
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Nitride electronics.” 2008-2009 Semiconductor Materials Market by World Region (Dollar in U.S. billions; Percentage Year-over- Semiconductor materials contracted for Year) 2009 2008 2009 % 2010-03-18 Region Japan 9.96 7.63 -23.4 SEMI have reported global semiconductor Taiwan 7.87 6.77 -14.0 Rest of World 6.90 5.98 -13.3 material sales of US$34.6 Billion South Korea 5.90 4.69 -20.5 North America 4.99 3.79 -24.1 China 3.57 3.26 -8.7 The global semiconductor materials market Europe 3.32 2.52 -24.1 contracted 19 percent in 2009 compared to Total 42.51 34.63 -18.5 2008 as the semiconductor industry reacted quickly to deteriorating market conditions in the first part of the year. While the decline in 2009 LED business ‘expected to grow’ in Taiwan was significant, it was less than the 26 percent 2010-03-18 decline the semiconductor materials industry incurred in 2001. The Taiwanese LED market could be set for
considerable growth. Semiconductor materials market revenues totalled $34.6 billion globally in 2009. Total The market for LED products is set to grow wafer fabrication materials and packaging materials were $17.9 billion and $16.8 billion, significantly in Taiwan over the coming 12 months, it has been forecast. respectively. Comparable revenues for these segments in 2008 were $24.2 billion for wafer Digitimes reported that Philips Taiwan general fabrication materials and $18.3 billion for manager Edward Po believes sales in the packaging materials. Significant decreases in silicon revenues contributed to the year-over- Taiwanese market for the firm could quadruple during the course of 2010 in comparison to last year decline in the wafer fabrication materials year’s levels. market.
He said these increases will be forged through Japan remains the largest consumer of a growing demand for LED lighting in the semiconductor materials with a 22 percent country, as well as the introduction of LED share due to its large wafer fab and advanced drivers and modules in 2010. packaging base. All regional markets experienced double-digit declines with the In addition, Mr Po claimed the company is exception of China, which contracted about set to focus on the midstream and upstream 9 percent. Increases in gold metal pricing sectors in particular this year. helped to offset declines in regions with strong packaging bases. (The ROW region is defined Philips develops a range of LED products which as Singapore, Malaysia, Philippines, other it claims have uses in many areas, including in areas of Southeast Asia and smaller global both indoor and outdoor lighting, signage and markets). backlighting for screens.
The company stated LED solutions can help create specific moods in spaces, ranging from relaxing blues to more vibrant reds and oranges to wake up observers.
April/May 2010 www.compoundsemiconductor.net 107 news digest ♦ compound semiconductor
Cree Announces Industry’s Most Energy- STAR® luminaire and lamp requirements. Cree Efficient Neutral and Warm Lighting-Class is accelerating the LED lighting revolution by LEDs pushing through performance milestones.” 2010-03-17 XP-G LEDs deliver high efficacy at high XLamp XP-G LEDs available up to 109 lumens current, potentially reducing the required per watt at 3000 K CCT number of LEDs, as well as the size and cost of LED fixtures. Neutral-white and warm-white Cree, Inc., a market leader in LED lighting, XP-G LEDs are commercially available now in announces the commercial availability of the the industry’s smallest ANSI-based chromaticity award-winning XLamp® XP-G LED in warm- bins. To find an authorized Cree XLamp and neutral-white color temperatures (2600 distributor in your area, please visit www.cree. K to 5000 K CCT). These new XP-G LEDs com/buyxlamp extend Cree’s highest level of light output and efficacy across the white color spectrum, driving general lighting applications such as Umicore completes construction of new US LED replacement lamps, outdoor area and germanium substrates production facility commercial luminaires. 2010-03-17 The warm white (3000 K) XLamp XP-G provides up to 114 lumens and 109 lumens Materials technology company Umicore per watt at 350 mA. Driven at 1.0 A, the XP-G has completed the construction of its new warm-white produces up to 285 lumens at 84 germanium substrates production facility in lumens per watt, which is four times the light Quapaw, Oklahoma, USA, adjacent to the output than the highest available XLamp XR-E existing site. warm-white LED at equal efficacy. The 40,000 square foot facility is now The neutral-white (4000 K) XLamp XP-G provides up to 139 lumens and 132 lumens undergoing process start-up and qualification runs. The new substrate facility is located on per watt at 350 mA. Driven at 1.5 A, the XP-G the same campus as the Umicore germanium neutral-white produces up to 463 lumens, which optics and high purity chemicals operation is four times the light output of the XLamp XR-E for the US market and will be integrated in cool-white LED at equal efficacy. the existing IS014001, 2004 system in the
course of 2010. This allows for a completely “We are excited to be working with the newest integrated supply chain operation, emphasizing Cree XP-G LEDs,” said Bob Fugerer, president, prompt internal recycling thereby minimizing Sunovia Energy Technologies, Inc. “The inventory stocking requirements of the valuable extremely high efficacy levels are enabling germanium metal. us to offer our Aimed Optics™ luminaires in a neutral color while maintaining the same pace- The production operation itself is modelled setting mounting-height-to-pole-spacing ratio on the Olen facility in Belgium which has and fitted target efficiency that we previously successfully supplied millions of substrates for achieved with cool-white color temperatures.” space and terrestrial photovoltaic applications. The new facility in Quapaw embodies proven “Cree is once again setting industry-leading state-of-the-art equipment and an advanced efficacy levels in warm and neutral white,” product tracking system. said Paul Thieken, Cree, director of marketing, LED Components. “These new XP-G LEDs “With Quapaw in addition to Olen, our total can enable LED lighting products that not installed annual production capacity stands at 1 only meet but exceed the current ENERGY million germanium wafers (4” eq). With our two
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Ge wafer plants in Europe and the USA, we’re applications in healthcare and wellness. now in an excellent position to meet market demand for the foreseeable future,” says Carl PLACE-it looks beyond the bulb for lighting Quaeyhaegens, General Manager of Umicore’s applications, optimally exploiting the energy worldwide substrates business line. efficient and small form-factor characteristics of new lighting technologies like LEDs and Germanium wafers are a core component OLEDs (organic LEDs). Imagine a lamp that of triple junction (III-V) high-efficiency solar is not fixed to the ceiling, but can instead be cells used on the vast majority of all satellites designed in any shape, or even blended into launched today. Triple junction (III-V) solar cells the surroundings, or curtains that emit light based on germanium wafers are also widely to mimic natural daylight conditions. Imagine applied in terrestrial Concentrated PV systems illuminating jackets for children to safeguard (CPV), an emerging, highly promising, and them as they cycle home from school and ultimately lowest electricity cost technology of even bandages that shine light on the body to all PV technologies, for areas with high direct treat skin diseases. These are just some of the sunlight irradiation (DNI). examples of products that could become reality in the near future.
“Until now, large area electronics R&D has been carried out independently for flexible, elastic and fabric based technologies,” says Liesbeth van Pieterson, senior scientist at Philips Research and project leader of PLACE-it. “In the PLACE-it project, foil, elastic and fabric substrate technologies will be systematically co-developed with the common goal of heterogeneous integration.”
PLACE-it received €10.9 million funding by the European Community’s Seventh Framework Programme. The project aims to realize an PLACE-it makes light flat and flexible industrial platform for lightweight, thin and 2010-03-17 flexible optoelectronics systems within three and a half years and will: Leading companies and institutes in lighting and flexible electronics, including Philips, Holst Develop an integration platform of foil, elastic Centre/TNO, imec, Freudenberg, TU Berlin and and fabric optoelectronic technologies. more have joined forces to co-develop the route Create foil, elastic and fabric-based devices for to integrate light into people’s surroundings light emission, electronics and sensing. be it ceilings, walls, floors, furniture, soft Formulate industry design guidelines for light- furnishings, and even garments. emitting flexible surfaces and textiles. Build demonstrators of compelling beyond-the- The ultimate aim of this PLACE-it (Platform bulb applications. for Large Area Comformable Electronics by PLACE-it will share the outcome of the project InTegration) initiative is to realize an industrial with third parties and start the dialogue with platform for thin, lightweight and flexible designers, architects, governments, industry optoelectronics systems that will not only open and other stakeholders to discuss the future new dimensions in product design, but will of comfortable ambient lighting and the also create unique opportunities for on-body requirements/conditions for an industrial
April/May 2010 www.compoundsemiconductor.net 109 news digest ♦ compound semiconductor platform. Tekcore announces placement to fund MOCVD purchase About PLACE-it 2010-03-16 PLACE-it is the”Platform for Large Area Tekcore has announced a placement to provide Conformable Electronics by InTegration” and additional MOCVD machines to help meet a aims to integrate lighting into people’s daily growing demand for its products. surroundings. The point of departure is that technology should be bendable and stretchable LED chip manufacturer Tekcore has announced – not flat, square and fragile. The aim is to the placement of an additional 100 million combine technical performance with elasticity, shares worth NT$3 billion (£62.24 million) in comfort and light in light-emitting flexible order to fund the purchase of additional metal- surfaces and textiles. PLACE-it works with 12 organic chemical vapour deposition (MOCVD) partners in the project: Centexbel, Freudenberg machines. Forschungsdienste KG, Freudenberg NOK
Mechatronics, Freudenberg Mektec Europe, The firm said that growing demand for its Grupo Antolin, imec’s associated laboratory products in the backlighting sector in particular at Ghent University, Philips Research, Philips have led it to make this announcement. Lighting, Philips Lumalive, Netherlands
Organisation for Applied By the end of the first quarter of 2010, the Scientific Research (Holst Centre/TNO), company hopes to have made significant Ohmatex , RWTH Aachen, Technische investment in MOCVD and plans to own 38 Universität Berlin, TITV Greiz and University machines - up from 27 at the end of 2009. of Heidelberg. More information www.place-it- project.eu . Increased demand for its high-brightness (HB) LEDs is also forecast to push up the company’s revenue by 20 per cent over the first three months of the year to NT$160 million. Tekcore was founded in 2000 and specialises in the development of HB LED technology.
The firm’s products have a range of uses, such as primary light sources for fibre-optic cabling, LCD and projection backlighting, vehicle, interior and exterior lighting, as well as in large- scale displays and billboards.
Sapphire Substrate Market Exceeded $200M in 2010 2010-03-16
Sapphire material market exceeded $200M in 2010 despite the downturn.
Sapphire product is serving mainly 2 applications in the electronics field: GaN-based LED and RF devices, both for mobile phones (Silicon-on-Sapphire SoS technology).
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The sapphire substrate market for electronic and 4 wafers. We ran our proprietary Sapphire applications has reached a market volume of Growth Cost Model tool and found that only approximately 9 million wafers (2 equivalent) Kyropulos and EFG growth techniques could for LED augmented by some 10s of thousands generate a sub $6/sq. inch c-plan wafer cost 6 and 8 wafers for SoS RF applications in in 6 diameter, which is again very expensive 2009. compared to smaller diameter materials. Japan captures almost half the business Despite the 2009 economic situation and thanks mostly to LCD LED backlight With more than 44% market share, Japanese applications, the c-plan sapphire wafer market sapphire producers are again leading the grew +4% over 2009 compared to 2008 in the business in 2009. Kyocera and Namiki are LED segment. now collecting more than $100M in sapphire revenues for both substrates and non-substrate On the other hand, r-plan sapphire business for (Optical applications) products. Shinkosha and SoS applications has been strongly affected by Sumitomo Metal Mining are also part of the the recession as the main application markets TOP-12 players. are related to consumer appliances (mainly mobile phones). As a result, a -55% revenue In the US, Rubicon has faced a severe decline has been observed on the r-plan side. downturn on the r-plan segment as its main client Peregrine has strongly reduced its 2 sapphire price as low as ever but shortage orders. In Europe, Monocrystal Plc. remains the risk could generate turbulence number one actor.
The price pressure on 2 remains critical and This report provides a complete analysis of the our models showed that most of the suppliers 2 main applications targeted by the sapphire are having a very tiny margin on that material substrates along with key market metrics. It and some of them are even losing money in describes the involvement of the major material that business. The 2 price level, especially suppliers and gives a snapshot of the sapphire in Taiwan, was extremely low and the industry playground. The report presents the psychological $10 threshold has probably been $ and unit values on the 2006-2013 time scale reached. However, we stay confident that 2 for the GaN-based LED and SoS-based RF wafer price will gain +15% to 20% in 2010 as a devices and their equivalence in substrate shortage situation cannot be excluded. consumptions and related material market size.
Indeed, our Demand-Capacity analysis shows Benefits of the report for equipment and a risk-zone that should occur during the second material manufacturers: half of 2010, where all the planned capacity wont be fully installed, facing a demand in * Analysis of the structure of the sapphire LED that can create some turbulence. Now, industry and evolution of the industrial food we feel comfortable saying that this stress chain period should end early in 2011 with the full * Calculation of substrate volumes to be ramp-up of sapphire producers. Is 6 sapphire produced for every market segments economically viable for LED? * Status of diameter currently in use and transition forecasted in the future 2009 saw the introduction of first industrial tools running 6 diameter for LED manufacture. It is Benefits of the report for the devices still unclear how 6 sapphire can bring a strong manufacturers: added-value on the LED manufacturing cost as the market price of these substrates stays * Analysis of the current applications and very high in comparison to $/sq. inch costs for 2 detailed analysis of the future businesses * Analysis of the competition from large
April/May 2010 www.compoundsemiconductor.net 111 news digest ♦ compound semiconductor companies to small start up 25 Countries * Volume and price forecast Market trends Companies Mentioned:
* ACME Electronics Corporation. With virtually unlimited potential, photovoltaic * Alpha Crystal Technology Corp.: ACTC (PV) technology is the most promising source * Advanced System Technology of electricity for the future. * Crystal GmbH Driven by carbon concerns, desire for * CrystalQ energy independence and limited oil and * Crystal Systems gas production, many governments want to * Crystal Wise increase the share of electricity produced by * Crystal On solar panels. However, photovoltaic electricity * Epistone production remains one of the most expensive. * Exiton * ILJIN Display Co. An effective way to increase PV electricity * Jiaozuo City Crystal Photoelectric Material production is to reduce the cost through Co., Ltd . targeted incentives. In the last ten years a number of government sponsored incentive * Juropol programs have been established. * Kyocera * M.J Corporation Japan and Germany led the way and each * Monocrystal PLC, Inc. encountered tremendous success. The demand * Namiki for solar panels experienced in recent years in * N-Crystals those countries has been a direct result of their * Precision Sapphire Technologies incentive programs. * Rubicon Technology * Saito Optical Science When a country decides to promote PV energy * Saifei with incentives it will result in: immediate * Saint-Gobain Crystals investment opportunities; creation of thousands * San Chih Semiconductor of jobs; and shipping of solar products in * Sapphire Technology Co., Ltd substantial volumes. * Sino American Silicon But, incentive programs are complex and * Shinkosha it is crucial for everyone involved to have a * Silian Sapphire Corporation clear picture of the situation to make informed * Siltron / LG choices. For more information visit http://www. With virtually unlimited potential, photovoltaic researchandmarkets.com/research/2df43b/ (PV) technology is the most promising source sapphire_substrate of electricity for the future.
Driven by carbon concerns, desire for Understand the Details and Impact of energy independence and limited oil and PhotoVoltaic Installation Incentive Programs gas production, many governments want to 2010-03-16 increase the share of electricity produced by solar panels. However, photovoltaic electricity Research and Markets has announced production remains one of the most expensive. the addition of the PV Incentive Programs - Understand the Details and Impact of An effective way to increase PV electricity PhotoVoltaic Installation Incentive Programs in production is to reduce the cost through
112 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest targeted incentives. In the last ten years a Past amount of installation and government number of government sponsored incentive forecast programs have been established. Who should buy? Japan and Germany led the way and each encountered tremendous success. The demand Industrial companies and/or investors who for solar panels experienced in recent years in need accurate information on countries to make those countries has been a direct result of their strategic decisions. Information described in incentive programs. this report is based on an in-depth investigation that Yole Dveloppement carried out on 80 Objectives of the report countries worldwide. We have discussed with the main organizations and controlling bureau After discussing with key experts for each in each country to get access to the right country and analyzing their programs, we have information. published this report to explain the market in detail. The objective of this report is to provide For more information visit http://www. the best information on each country active in researchandmarkets.com/research/096c59/ the PV field with data summarizing the type and pv_incentive_progr the definition of incentive programs in a concise way.
For each country the following information is Seoul Semiconductor LEDs Illuminate provided: Tourist Destination 2010-03-16 General data VALENCIA, Spain, Streets will be brighter, * Population 2006 (million) tourists safer, and electrical bills lesser in * GDP 2006 (billion 2000$) this Mediterranean resort region, thanks to * Growth of GDP 1990-2006 (%) 1,000 new energy-efficient and cost-effective * Total Energy production (Mtoe) streetlights using Seoul Semiconductor LEDs. * Energy use (Mtoe) * Energy use growth 2005-2006 (%) It’s all part of a program initiated by Revolution * Electricity production (GWh) LED of Spain to replace existing light bulbs * Electricity consumption (GWh) on streets and in public facilities throughout * Electric Power consumption per capita the country with high-quality, energy-efficient (kWh per capita) lighting.
Energy sources breakdown One thousand street lights using LEDs from Seoul Semiconductor, the global-leading * Nuclear, oil, wind, PV LED manufacturer, have been installed in the municipality of Rafelbunyol. Irradiation map Description of the incentive program A year of testing by Revolution LED proved that Seoul Semiconductor’s long-lasting LEDs are * MWp up to the job. Seoul Semiconductor LEDs offer * Key targets and possible cutoff points the world’s best luminous efficacy (100lm/W) Breakdown installation type from a single light source. They reliably deliver the necessary brightness and last three times * Residential, commercial, solar farms, rural longer than traditional street lights. electrification Revolution LED reports that energy
April/May 2010 www.compoundsemiconductor.net 113 news digest ♦ compound semiconductor consumption has been reduced 65 percent as a Prior to the ITC matter, Avago sued Emcore result of replacing 160 W light bulbs with Seoul for infringement of the patents in December Semiconductor’s. The lighting products used 2008 in the U.S. District Court for the Northern in street lights contain 56, 112 and 168 LEDs District of California. The District Court case made by Seoul Semiconductor for three models against Emcore for damages is temporarily respectively. The 56 W LED light bulb replaces stayed until an ITC Order becomes final. Avago the existing 160 W bulb and lasts three times will pursue the infringement charges in the as long. The performance of the light bulbs was District Court when the stay is lifted. verified by Polytechnic University of Valencia and the Valencian Institute of Technology. This past week, the ITC found that Avago patents cover parallel fiber optics products and The program is so successful, Sr. Vice components made and sold by Emcore and President S.M. Lee of Seoul Semiconductor used for data communications for core routing said, that 3,000 additional lighting fixtures and enterprise networking. soon will be installed throughout the Valencian Community. In addition, product testing is Avago’s General Counsel, Patricia H. McCall, underway on the Atlantic coastal community of stated “Avago is pleased by the ITC’s decision Jerez, Spain, where 23,000 street lights will be and remains committed to protecting and, replaced. where necessary, taking action to enforce its valuable patent and intellectual property rights. Our belief in the strength of our intellectual property in parallel fiber optics is validated by ITC Rules in Favor of Avago Technologies in this decision.” Parallel Fiber Optics Case 2010-03-16 In the next phase of the case, the ITC will consider the appropriate scope of an exclusion Avago Technologies, supplier of analog order enjoining Emcore from importing the interface components for communications, infringing optoelectronic products and systems industrial and consumer applications, employing these components into the United announced today that on Friday March 12, States for the term of Avago’s patents. The 2010, the International Trade Commission ITC has recommended an exclusion order issued the Initial Determination finding a to prevent further importation, and also violation of Section 337 of the Tariff Act of recommended a cease and desist order to 1930, as amended, 19 U.S.C. § 1337, in favor prevent Emcore from selling already imported of Avago Technologies, upholding the validity infringing products. of Avago’s patents and finding that Emcore Corporation infringes Avago’s intellectual The case is In the Matter of Certain property by importing and selling certain Optoelectronic Devices, Components Thereof optoelectronics products used in optical and Products Containing the Same, case communication systems. After a one-week number 337-TA-669, in the U.S. International hearing in November 2009, and post-hearing Trade Commission. Avago was represented by briefing, the ITC also rejected Emcore’s Novak Druce + Quigg LLP. invalidity and other defenses.
In March 2009, the ITC announced that it would RFMD announces PV breakthrough take up Avago’s complaint, which accused 2010-03-15 New Mexico-based Emcore of making fiber optic components that infringe Avago’s U.S. RF Micro Devices has announced the Patent Numbers 5,359,447 and 5,761,229. development of a new PV system using gallium arsenide compound semiconductors.
114 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
RF Micro Devoices (RFMD) has announced a Satoshi Yamasaki (Principal Research breakthrough in the commercialisation of high- Scientist), the Energy Technology Research performance photovoltaic (PV) cells. Institute (ETRI) (Director: Yasuo Hasegawa) and Toshiharu Makino, the Energy Enabling The company reported it has developed Technology Group (Leader: Shin-ichi the world’s first PV unit utilising high- Nishizawa), ETRI of the National Institute of volume six-inch gallium arsenide compound Advanced Industrial Science and Technology semiconductors. (AIST) (President: Tamotsu Nomakuchi) successfully enhanced the output power of RFMD stated the development was the an ultraviolet (UV) light emitting diode (LED) culmination of a partnership with the US using semiconducting diamond in cooperation Department of Energy’s National Renewable with the National Institute for Materials Science Energy Laboratory (NREL) which it entered into (NIMS) (President: Sukekatsu Ushioda) on July 1st last year. and Syntek Co., Ltd. (President: Susumu Yamazaki), and also confirmed the sterilization Alfonso Velosa, research director for of Escherichia coli (E. coli) in collaboration with semiconductors at Gartner, said: “Within a the Corporate Advanced Technology Center few years the concentrated PV market may (Head: Shinobu Kinoshita) of Iwasaki Electric be able to deliver large volumes of renewable Co., Ltd. electricity, based in part on obtaining large volumes of high-quality - yet low-cost - solar Owing to a global increasing trend of epidemic cells, from bankable manufacturers.” diseases caused by viruses such as the novel influenza A (H1N1), sterilization has become a NREL is the only federal agency dedicated critical necessity for society and daily life. Dry to the development, commercialisation and sterilization by UV light is a widely employed deployment of next-generation renewable technique, in which a mercury lamp is used energy sources throughout the US. as the light source. However, mercury lamps require bulky equipment, and further, mercury It began operating in 1977 as the Solar Energy is not environment-friendly. Therefore, there Research Institute, but later changed its name is a need for the development of UV LEDs, after being designated a national laboratory in which do not contain mercury and facilitate 1991. easy sterilization. Although LED illuminations have been widely used as energy-saving light sources, e.g., Christmas illuminations, Sterilization by a Diamond LED UV LEDs are yet to be put to practical use. 2010-03-15 Mercury-free UV LEDs can be employed as portable and easy-to-use germicidal lamps. Output power of deep ultraviolet light enhanced AIST has improved the quality of a diamond semiconductor, which is called the ultimate semiconductor, and has been conducting research and development aiming at its application to electronic devices. This has led to the development of LEDs that are based on a novel principle, according to which excitons are used for emitting UV light with a wavelength of 235 nm. We succeeded in developing a diamond LED with an output power of 0.3 mW, which is close to the practical output
April/May 2010 www.compoundsemiconductor.net 115 news digest ♦ compound semiconductor power value, by improving the quality of the widely used gallium nitride based materials, it diamond and the structure of the device. We is more difficult to fabricate LEDs emitting light confirmed the sterilization of E. coli by UV light of shorter wavelengths. In fact, LEDs that emit of the diamond LED. The results indicate that light of wavelength 350 nm or shorter are not the developed diamond LED has potential commercially available. applications as portable germicidal lamps. History of Research The results will be exhibited at nano tech 2010 International Nanotechnology Exhibition Although diamond is known to be a good & Conference, commencing on February 17, semiconductor, it is not as widely used as 2010 at Tokyo Big Sight. silicon because of the difficulties involved in processing methods and improvement in the quality of diamond. AIST has gathered knowledge pertaining to diamond synthesis, electronic device technology, and the physics concerning diamond. On the basis of this knowledge, AIST aimed at the first practical application of diamond to electronic devices and was successful in generating highly efficient UV light emission by excitons, which are characteristic of diamonds (released to the press on August 28, 2006). The LEDs based on the new principle emit 235-nm light, which is effective for sterilization. We successfully
increased the luminescent efficiency of the LED by improving the diamond quality and Social Background for Research the device structure, and demonstrated its Owing to a global increasing trend of epidemic effectiveness in sterilization. diseases caused by viruses such as the novel This research and development were influenza A (H1N1), sterilization has become promoted in collaboration with NIMS and a critical necessity for society and daily Kobe Steel, Ltd. (President and CEO: Hiroshi life. Sterilization is generally carried out by Sato) under the “Research and Development using heat, chemicals, and UV light. In these of Nanodevices for Practical Utilization of sterilization treatments, UV light has many Nanotechnology” project supported by the New advantages as follows: it is effective against Energy and Industrial Technology Development thermotolerant bacteria, it has no adverse Organization (NEDO) in FY2007 and FY2008. chemical effects, and it directly acts on the This research is also being conducted by AIST, bacterial DNA to inhibit proliferation. Light Iwasaki Electric Co., Ltd. (President: Takao with a wavelength of around 260 nm—the Kumasaka) and Syntek Co., Ltd. with the wavelength at which DNA absorbs light—is support of the product performance evaluation capable of significant bacterial sterilization. project for small and medium enterprises in the Although low-pressure mercury lamps that FY2009. emit 254-nm UV light are currently used, the lamps use mercury, which is environmentally Details of Research unfriendly. Therefore, the development of semiconductor LEDs is desirable. The developed LED has a three-layered structure consisting of an n layer, an i layer, and Although the development of UV LEDs has a p layer, as shown in Fig. 2. This structure been promoted by using LEDs composed of was fabricated by the microwave plasma
116 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest chemical vapor deposition method evolved Although UV light is invisible, weak visible light at AIST. A circular titanium electrode having that is simultaneously emitted is observed. a diameter of 0.15 mm was deposited on the front side of the LED, and another titanium electrode was deposited all over the rear side.
In the i layer (a light-emitting layer), negatively charged electrons and positively charged holes from the n and p layers, respectively, combine to generate electron-hole pairs, called excitons. The diamond LED utilizes the light emitted from the i layer when the excitons disappear. While conventional LEDs utilize the light emitted during direct recombination of the electrons and holes, the diamond LED is based on a novel principle utilizing the excitons.
Figure 4 Spectrum of the emitted light
Strong light at 235 nm is emitted. Weak visible light is also observed.
As shown in Fig. 5, the diamond LED was placed approximately 2 mm above the agar medium on which E. coli bacteria were Figure 2 Cross section of the diamond UV LED spread. A current of 300 mA (corresponding to Figure 3 shows light emission from the approximately 0.1 mW) was applied, and UV fabricated LED. Figure 4 shows the emission light was irradiated for 100 s (actual irradiation spectrum; a peak appears at 235 nm, was performed by repeating UV irradiation for which is characteristic of diamond excitons. 10 ms at intervals of 90 ms. This required 1000 Simultaneously, visible light due to the s). The medium was incubated for 24 hours crystalline defects is also observed. Even after the irradiation, and the proliferation of E. though most of the generated UV light is coli was observed. Figure 6 shows the image obstructed by the electrode as shown in Fig. of the agar medium that was incubated for 24 5, the emission intensity is 0.3 mW, and the hours. From the figure, it could be seen that external quantum efficiency is found to be E. coli did not grow in the UV-irradiated region, approximately 0.01%. indicating the sterilization by the fabricated diamond LED. Although the electrode was circular with a diameter of only 0.15 mm, the sterilized area was a circle with a diameter of approximately 10 mm. In other words, the sterilized area was nearly 1000 times the electrode area.
In the case of the developed LED, most of the light emitted from the i layer was blocked by the electrode and absorbed internally, and only Figure 3 Light emission from the diamond LED the light that escaped from the circumference of the electrode was available for sterilization.
April/May 2010 www.compoundsemiconductor.net 117 news digest ♦ compound semiconductor
Nevertheless, the intensity of the emitted light Future Schedule was adequate for confirming sterilization. We intend to improve the device structure To enable the applicability of our diamond UV to increase the extracting efficiency of the LED to practical sterilization, we will enhance generated light. the emission intensity by improving the device structure and substantiate the LED’s rapid sterilization capability.
Source: National Institute of Advanced Industrial Science and Technology (AIST).
http://www.aist.go.jp/aist_e/latest_ research/2010/20100305/20100305.html
Harsh Environment Fiber Optic Components and Devices/Parts Global Market Forecast & Analysis 2010-03-15
ElectroniCast Consultants, a leading market Figure 5 Red areas denote the light emitting & technology forecast consultancy addressing regions. Light that escaped from the circumference of the electrode was used for the fiber optics communications industry, today announced the release of their market sterilization. forecast and analysis of the global market consumption and technology trends of fiber optic components, and supporting devices and parts, which are designed to operate in harsh environments, beyond the environment of commercial telecom and datacom (premise) installations.
“The environments encountered by the components included in this analysis and forecast often require custom designed packaging, with much smaller quantities required, compared to packaging of components for conventional/commercial applications,” said Jeff D. Montgomery, chairman and founder of ElectroniCast
Consultants –and the director of the study Figure 6 Image of the agar plate on which the program. “The environmental extremes that E. coli was spread. UV light was directed at must be accommodated are greater, there often the center by the diamond LED, and incubation is a need for minimizing size and weight, shock was carried out for 24 hours. At the point of and vibration environments are more extreme,” irradiation, E. coli was killed, while proliferation Montgomery added. of E. coli was observed in the surrounding purple area. According to ElectroniCast, the American region in 2009, led in global consumption of
118 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest harsh environment fiber optic components This market forecast and analysis report is with 53 percent relative market share ($328 available immediately from ElectroniCast million), as detailed in Figure 1. The European Consultants. For detailed information on this region held second-place and the Asia Pacific or other services provided by ElectroniCast, occupied third-place. “Over the 2009-2019 please contact Theresa Hosking, Marketing/ period, however, consumption of these Sales; [email protected] components will expand faster in the European (Telephone/USA: 707/275-9397) and the Asia Pacific regions,” Montgomery said.
Harsh Environment Defined Harsh Environment RFMD Achieves Milestone in (HE) is defined, by ElectroniCast, as environment beyond the limits normally Commercialization of High-Performance encountered by commercial telecom, datacom Photovoltaic Cells 2010-03-16 and commercial intra-equipment fiber data links; extremes of RF Micro Devices, Inc. a global leader in the - Temperature; above or below (-40 to +75) design and manufacture of high-performance degrees C radio frequency components and compound - Shock and vibration semiconductor technologies, today announced - Tensile strength (e.g., for fiber-guided it has successfully manufactured the industry’s missiles, tethered sensors, etc.) first photovoltaic cell using high-volume six-inch - High electromagnetic or radio-frequency (EMI/ gallium arsenide (GaAs) machinery. RFI/EMP) interference - Corrosive and/or solvent surroundings The photovoltaic (PV) cell was manufactured - Atomic and other Radiation in RFMD’s existing high-volume, six-inch GaAs - External pressure extremes wafer fabrication facilities in Greensboro, NC, - Rough handling during installation/deployment with no fabrication equipment modifications. - Others This achievement represents the first in a series of milestone achievements anticipated Necessary rough handling during installation by RFMD related to the commercialization of or deployment also qualifies as a “harsh high-performance multijunction PV cells. environment”. RFMD is a pioneer in compound semiconductor SEE DATA FIGURE manufacturing with a proven ability to commercialize new technologies. On July 1, 2009, RFMD announced it had entered into a cooperative agreement with the U.S. Department of Energy’s National Renewable Energy Laboratory (NREL) to develop a commercially viable and high volume-capable compound semiconductor-based process for high-performance multijunction PV cells.
NREL Director Dan Arvizu said, “NREL’s collaboration with RFMD demonstrates our commitment to developing the best technologies for renewable energy and aligning with the most capable partners to commercialize and deploy each technology. We applaud RFMD’s successful achievement of
April/May 2010 www.compoundsemiconductor.net 119 news digest ♦ compound semiconductor this first technical performance milestone.” using technology capable of best-in-class solar cell conversion efficiency. NREL’s technology Bob Bruggeworth, president and CEO of has demonstrated one of the world’s highest RFMD, said, “By combining NREL’s technology reported solar cell conversion efficiencies, leadership and decades of research with at 40.8 percent, and continued substantial RFMD’s industry-leading cost structure and improvements in efficiency are anticipated. technical expertise in commercializing high- performance, reliability-proven compound semiconductors, we are accelerating the Market status for solid-state lighting commercialization of a next-generation process equipment in the form of LEDs technology that promises the solar industry’s 2010-03-15 lowest cost, highest-performance PV cells.” The goal of BCC Research was to determine Alfonso Velosa, Research Director, the current status of the market for solid-state Semiconductors, Gartner, said, “The lighting equipment in the form of light-emitting semiconductor industry continues to diodes (LEDs), and to assess their growth demonstrate its ability to innovate and produce potential from 2008 to 2009 and then to 2014. lower cost products that enable nascent The types of LEDs and their value for various industries to emerge. Semiconductor firms consumer and industrial applications are of have the potential to change the dynamics in particular interest. the concentrated PV market, since they may be able to produce low cost, high efficiency solar cells on their existing, depreciated equipment A solid-state lighting initiative has been in and robust manufacturing processes. Within place for the past 10 years and is targeted at a few years the concentrated PV market may replacing traditional lighting products, such as be able to deliver large volumes of renewable bulbs, with LEDs. BCC Research provides a electricity, based in part on obtaining large comprehensive analysis of the progress to date volumes of high quality -- yet low cost -- solar and its overall market potential. cells, from ‘bankable’ manufacturers.” Summary of report RFMD achieved this PV cell milestone in the Global shipments of high-brightness LEDs Foundation Phase of the agreement, during reached $5.5 billion in 2008. The market is which the capability to manufacture basic PV projected to dip slightly to $5.4 billion in 2009 cells at RFMD’s manufacturing facilities is because of the global economic recession, but being established. After the Foundation Phase, then increase at a compound annual growth a Technology Demonstration Phase will begin, rate (CAGR) of 8.1% through 2014. during which PV cells leveraging NREL’s IP and technology will be fabricated at RFMD’s LED shipments for the automotive market are manufacturing facilities. The final phase of expected to decline from $849.5 million in the agreement is the Production Readiness 2008 to $766.6 million in 2009. The automotive Phase, during which RFMD’s high-volume, six- sector was affected severely by the economic inch fabs will demonstrate high-performance problems and is managing its way back to the PV cells with high yields, high reliability, high plus side. Shipments of LEDs in the automotive reproducibility and low cost. sector will reach $1.3 billion annually by 2014, a 5-year CAGR of 11.5%. The successful execution of RFMD’s multi-year agreement with NREL is expected to result Display backlighting has been and still is a in the high-volume production of PV cells in growing market for LEDs. Shipments reached RFMD’s fabs as early as calendar year 2012, $869.4 million in 2008 and are anticipated to
120 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest rise to $933 million in 2009 and then to $1.5 First Solar Sells 30 Megawatt Solar billion by 2014, a 5-year CAGR of 11.1%. Photovoltaic Power Project 2010-03-15 Mobile devices, the largest portion of the LED market, recorded revenues of $2.5 billion in First Solar Sells 30 Megawatt Solar 2008 and will decline slightly in 2009 to an Photovoltaic Power Project to Southern estimated $2.4 billion. Despite the growing Company and Turner Renewable Energy saturation in this part of the market, shipments of new mobile devices with additional features are projected to reach $3 billion by 2014. First Solar, Inc. (Nasdaq:FSLR) today announced it has sold a 30 megawatt (AC) The combined market for signals and signage photovoltaic solar power project to Southern applications recorded revenues of $692.3 Company (NYSE:SO) and Turner Renewable million in 2008 and will increase to $717.3 Energy. Financial terms of the transaction were million by 2014. The 2009 to 2014 CAGR for not disclosed. these combined markets is 8%.
General illumination, which has the largest The Cimarron I Solar Project is adjacent to long-range potential for LEDs, had shipments in the Vermejo Park Ranch in northern New 2008 valued at $548 million. They will grow to Mexico. First Solar developed the project an estimated $564.5 million in 2009 and then to and is providing engineering, procurement $1.2 billion by 2014. Their CAGR is projected to and construction (EPC) services. First Solar be 16.6%, the highest of all the industries. will also provide operation and maintenance services under a 25-year contract. The facility We see reasonable economic recovery for all of will supply power to approximately 9,000 the industries in this report. The automotive and homes, or 18,000 residents, and displace over mobile device markets were the hardest hit in 45,000 tons of CO2 per year. 2008 but will join the others in recovery in 2009 and more normal growth by 2014. “The Cimarron I project is yet another example of First Solar’s capability to realize utility- Summary figure scale solar projects,” said Rob Gillette, First value of global led shipments by industry, Solar chief executive officer. “Combining the 2008-2014 required technology, manufacturing, project ($ millions) development and EPC expertise enables First Solar to be a leader in sustainable energy development.”
Construction of the solar project will begin this month, with completion and commercial operation expected by year end 2010. It will employ approximately 500,000 photovoltaic modules manufactured by First Solar using its advanced thin film technology. The project will create over 200 jobs at construction peak. Source: BCC Research Electricity generated by the plant will serve a 25-year power purchase agreement with the Tri-State Generation and Transmission Association, a not-for-profit wholesale power supplier to 44 electric cooperatives serving 1.4
April/May 2010 www.compoundsemiconductor.net 121 news digest ♦ compound semiconductor million customers across Colorado, Nebraska, of its newly expanded Tainan Manufacturing New Mexico and Wyoming. Centre in Tainan, Taiwan. The nearly 15,000 About First Solar square meter facility will enhance Applied’s capability to serve its FPD and thin film solar First Solar manufactures solar modules with PV customers in Asia while capitalizing on an advanced semiconductor technology and Taiwan’s excellent location, strong talent pool provides comprehensive photovoltaic (PV) and supply chain efficiencies. system solutions. The company is delivering an economically viable alternative to fossil-fuel “The Tainan Manufacturing Centre is one of our generation today. From raw material sourcing biggest investments in Asia and puts Taiwan at through end-of-life collection and recycling, the center of our display and solar equipment First Solar is focused on creating cost-effective, technology efforts,” said Mike Splinter, renewable energy solutions that protect and chairman and CEO of Applied Materials. enhance the environment. For more information “Applied has a 20-year history of success in about First Solar, please visit http://www. Taiwan and with this expanded centre, we are firstsolar.com setting a strong foundation for even greater success in the next 20 years. I would like For First Solar Investors to thank our customers, employees and the Taiwan government who helped make this This release contains forward-looking state-of-the-art manufacturing facility possible.” statements which are made pursuant to the safe harbor provisions of Section 21E of the The Tainan Manufacturing Centre employs Securities Exchange Act of 1934. The forward- approximately 150 people and is expected looking statements in this release do not to build and ship about 100 new PECVD and constitute guarantees of future performance. PVD systems this year – a 400% increase in Those statements involve a number of factors shipments from last year. The Centre’s Tainan that could cause actual results to differ location and extensive supply chain in Asia materially, including risks associated with the will enable Applied to more rapidly meet the company’s business involving the company’s demands of its large base of display and solar products, their development and distribution, customers in Asia. economic and competitive factors and the company’s key strategic relationships and Applied Materials has a major presence in other risks detailed in the company’s filings Taiwan with more than 800 employees in 10 with the Securities and Exchange Commission. offices across the country. A leading market First Solar assumes no obligation to update for semiconductor and FPD manufacturing, any forward-looking information contained Taiwan is also becoming an increasingly in this press release or with respect to the active region for solar energy. In 2009, Taiwan announcements described herein passed renewable energy legislation aimed at promoting the use of renewable energy and boosting energy diversification. Applied has donated R&D systems for thin film solar AMAT announces expansion in Taiwan energy research to some of Taiwan’s leading 2010-03-16 universities and supports education efforts through its Applied Young Talent program. Applied Materials announces capacity growth for display and solar Equipment Manufacturing Taiwanese Premier D.Y. Wu, Dr. L.C. Lee, Capability in Taiwan minister of Taiwan’s National Science Council, Tainan County Mayor H.J. Su and S.C. Lin, vice Applied Materials has announced the opening minister of Taiwan Economic Affairs, attended
122 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest the festivities and recognized the contributions TH: The compound semiconductor market Applied has made to the country after 20 years is significant—many billions of dollars. It is of doing business in Taiwan. used as a material for products ranging from lasers for DVD players and telecom networks “I am pleased that Applied Materials, a globally to electronics for mobile phone handsets and recognized company, is continuing to invest base stations, to high-brightness LEDs for flat in Tainan and we will provide our full support panel displays and lighting, to solar cells based to making the Centre a great success,” on CdTe and other exotic materials, to night said Premier D.Y. Wu. “This is an exciting vision goggles for soldiers. It’s much more than time for Taiwan’s technology industry as an emerging sector. It has grown steadily over solar energy and flat panel displays emerge many years, and will continue for many more. as major opportunities for our economic development in the 21st century. We celebrate UZ: Well I think a major problem with industry Applied’s successful history in Taiwan and the and predictions in our time is the limited time extraordinary achievements made through the frame. The only thing which really seems collaboration and commitment of our people.” to matter is the quarterly report and ever increasing increases of revenue. Then comes a tough year caused by professional gambling on the finance market where the connection Industry Reader Comment between a company’s performance and the 2010-03-16 corresponding share values has long been lost and everyone is talking of a decline. I don’t Questions and Answers from Compound think that the view of a collective “compound Semiconductor Professionals semiconductor industry” is valid anymore. A couple of years ago, the only major business If you wish to add your comments please send within compound semiconductors were GaAs them to [email protected] RF transistors, small indicator LEDs and perhaps some laser diodes and fiber-optic
transmitters/receivers. But now you have Answers are from: “compound semiconductors” everywhere: LED lighting, flat-screen displays, multimedia players, power electronics, solar cells
Will Compound Semiconductor remain a niche industry?
TH: I dispute that it is a niche, considering Uwe Zimmermann, PhD its size in the billions of dollars and the vital Thin Film Solar Cell role it plays in many products. If you compare Tom Hausken, PhD Group Director, Photonics and compound semiconductor sales to silicon, then The Ångström Compound yes, it will always be a much smaller segment. Laboratory Semiconductors This is largely because silicon is so incredibly Strategies Unlimited cost-effective for so many things. You use www.strategies-u.com compound semiconductors for electronics only The Compound Semiconductor industry has when you need greater performance, and this been regarded as an emerging sector for a is usually for smaller volume applications where number of years but there is a sense that this even silicon is expensive. For everything else, may change. What do you think has occurred silicon is cheaper. to enable this market growth? That said, products based on compound
April/May 2010 www.compoundsemiconductor.net 123 news digest ♦ compound semiconductor semiconductors will see strong growth in manufacturing methods will improve further sales in coming years, especially from high- and be more efficient in materials and machine brightness LEDs as well as from thin-film utilization. Take high-brightness LEDs for solar cells. The overall revenues of compound example - we have come from costly and slow semiconductor products will become more MBE to MOCVD processes, chip sizes have significant compared to silicon. Not more— shrunk and wafer sizes gone up. However, more significant. it also seems that industry - because of the short-sighted quarterly planning - has lost at UZ: I don’t think that it is a viable approach to least some of its interest in driving R&D forward put all “Compound Semiconductor” business lately. under one roof anymore - the applications and markets have become too diverse. Soon What areas of application do you believe will be it will not really matter anymore, if a power the most successful for the CS industry? transistor in a power supply or an electric car is made of silicon, silicon carbide or gallium TH: If successful means the most profit over nitride. Not for the engineer who constructs the the longest period, maybe military applications electronic circuit - but of course the compound would come out high on the list. Or SiC semiconductor transistors will perform superior transistors for power management. It’s hard to to their silicon cousins. say.
Cost of materials has always been a concern in A very important segment to watch is high- this sector. What ways do you see the industry brightness LEDs. This is set to grow over driving down cost and are there areas that you 50% this year, to $20 billion by 2014. That’s feel could be improved in cost savings? huge growth, all thanks to compound semiconductors. TH: Everyone has their favorite fabrication technology, whether it’s putting GaN on silicon, UZ: LED lighting and solar cells or organic semiconductors for roll-to-roll solar While recognizing that no-one has a crystal cell manufacturing. I’m agnostic about that. The ball, where do you see the industry in three biggest driver from the market point of view is years time? Five years time? Ten years time? finding a high volume application to drive down manufacturing costs for other applications. TH: The strong growth in high-brightness This has already happened in some segments. LEDs will be the biggest news for this decade. GaAs chips are cheap enough that they appear Perhaps mobile phone handsets was the big in mobile phone handsets, but the margins are news of the last one. Solar cells and power thinner there, too. transistors will also be important. Since each of these uses a different substrate material, it’s Other drivers are things like industry standards, hard to generalize across the whole industry. or government incentives, such as those driving There will continue to be many suppliers, each solar cell installations in Germany and Spain. specializing in different products. It’s a very What I’m not a big believer in is larger wafer fragmented market. sizes. That may be a good move in some UZ: If the industry itself is not willing to invest cases, but it has be right. A lot of products just and look beyond quarterly reports I will not don’t merit it. Even in silicon. either.
UZ: Some of the base materials in our business What areas of microelectronics do you are scarce and will remain expensive. But with believe will only be addressed by Compound the growing industry also the market for refined Semiconductors? base materials will grow and reduce cost. Also
124 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
TH: Two key areas: on recyclable devices - especially with regard to the packaging. High frequency power amplifiers. This means GaAs, GaN, and InP electronics for handsets, If you wish to add your comments please send base stations, and various wireless and wireline them to [email protected] communications applications, and other microwave range applications.
High power transistors for power management. Mitsubishi Electric Develops New Optical This means mainly SiC but maybe also GaN Transmission Devices 2010-03-16 power transistors for things like hybrid cars, motors and generators, server farms, and Mitsubishi Electric Corporation (TOKYO: possibly even consumer electronics. 6503) announced today that it has developed UZ: Electronic power devices, lighting LEDs transmission devices featuring the world’s top- and solar cells are devices with square- level characteristics for super high-speed, 100 millimetre dimensions while modern processors Gb Ethernet applications that multiplex four are going towards nanometre dimensions. wavelength channels of 25 Gbps-speed optical There is no “micro” anymore. I do not see III-V signals in parallel. or II-VI materials in microprocessors or similar devices in the near future at least. Of the two devices, the high speed direct modulation-distributed feed back (DFB) laser What issues do you believe are important for diode, which is incorporated in devices that this industry and market sector? Based on your send out optical signals, features modulated company and you personal perspective? waveforms of 25 Gbps. The photo diode array, TH: There are a few big issues that are beyond which is incorporated in receiver modules, has just manufacturing or product marketing, a leading-edge responsivity of 0.88 amperes particularly those that relate to government per watt (A/W). Part of these development policy. Government incentives and energy achievements stem from a government project prices are critically important to solar energy called “R&D on High-speed Optical Transport and LED lighting. Or disincentives, such as System Technologies (High-Speed Low-power- consumption Optical Transport Technology for the coming ban on inefficient incandescent lamps. Improved product standards also help Ethernet)” overseen by the Ministry of Internal LEDs to gain acceptance by customers. Night Affairs and Communications in Japan. vision supplier FLIR has done well during the years of the Iraq and Afghanistan wars, despite Background the current recession. The expansion of the Transmission volume over optical iPhone and roaming Internet service is pushing communication networks is rapidly increasing. wireless providers to upgrade their network To respond to this increase, the IEEE is infrastructure. These are hugely important expected to set a standard for 100 Gb Ethernet factors (100GbE) in June 2010, which will increase the UZ: Upcoming issues with the massive maximum transmission speed from the current spreading of LEDs for lighting and of solar cells 10 Gbps Ethernet standard. Specifically, will be the issue of recycling, especially with the within transmission distances of 100 meters background of the scarcity of some of the basic to 10 kilometers, such as between local data chemical elements (In, Ga) and the possible centers and inside buildings, a standard environmental impact of others (As, P, Sb, Se, called “100GBASE-LR4” is being considered Te). I assume that industry should try to focus as a method to transmit data at 100 Gbps by wavelength multiplexing four channels of 1.3
April/May 2010 www.compoundsemiconductor.net 125 news digest ♦ compound semiconductor micrometer-wavelength 25 Gbps signals in The photo diode developed by Mitsubishi parallel. To send and receive these optical Electric has a new highly reflective mirror at signals, each end requires four optical the bottom of its optical absorption layer, which semiconductor chips that operate at 25 Gbps: reflects the signal light so that the light will go four DFB laser diodes to send optical signals through the thin absorption layers twice to be and four photo diodes to receive these signals. converted into electrical signals. Through this design, Mitsubishi Electric was able to achieve high speed operation of up to 25 Gbps, with Product Features a top-level high responsivity of 0.88 A/W. 1) Achieves direct modulation eye diagrams Integration of four photo diodes into one array with high mask margin of 26 % or more, at a chip helps reduce the size of the receiver low power consumption of 0.1 W or less There modules to less than three cc, which is one is demand for 25 Gbps direct modulation DFB third in volume compared to the total volume of laser diodes that can be operated directly four discrete photo diode modules. by modulation signals and therefore do not require external modulation devices, which can in turn lead to 2/3 lower energy consumption Other Features and lower transmission equipment costs. It Characteristics of 25 Gbps DFB laser diodes was difficult until now, however, to raise the speed to as fast as 25 Gbps because at high speed, the mask margin, an index that shows the quality of modulation waveforms (eye diagrams), becomes lower. The active layer of the newly developed laser diode, where laser beams are made, incorporates a buried active layer structure using AlGaInAs. The laser diode also has an active layer with a short cavity, and by keeping down the density of the operational A 3D nanostructure for improved solar-cell current, as well as by inhibiting the electrons efficiency in the active layer from dispersing at high 2010-03-16 temperature, Mitsubishi Electric achieved low energy consumption and a world-leading level Ali Javey, Zhiyong Fan, Daniel Ruebusch, of quality in eye diagrams. Even at a very high and Rehan Kapadia Recent advancements in operating temperature of 50 degrees C and low nanopillar arrays lead to more cost-effective average current of 45 mA, the newly developed photovoltaics. laser diode can achieve an optical output of 9 dBm and a high mask margin of 26% or Cost-effective photovoltaic (PV) technologies more. As a result, this device will enable up are the key for large-scale deployment of to 10 kilometers of transmission under the solar cells capable of producing clean energy. 100GBASE-LR4 standard with low energy Although conventional planar crystalline consumption of 0.1 W or less. PV cells can provide good efficiencies, they are not viable for large-scale deployment 2) Four 25 Gbps photo diodes with high because of relatively high costs. On the responsivity of 0.88 A/W integrated in one array other hand, inorganic and organic thin-film chip There is a tradeoff between gaining high semiconductor-based PV cells have low speed by making optical absorption layers material and fabrication cost, but their large- thinner and achieving high responsivity in photo scale performance is poor. diodes, which made it difficult to gain sufficient responsivity at a very high speed of 25 Gbps. Nanostructured materials grown with low-cost,
126 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest bottom-up approaches usually have crystalline is an estimated $5.4 billion in 2009, but is nature and, therefore, are promising candidates expected to increase to $8.2 billion in 2014, for to achieve cost-effective PV cells. In addition, a 5-year compound annual growth rate (CAGR) ordered nanostructures have demonstrated of 8.7%. intriguing optical and electrical properties favoring photon broadband absorption and The second-largest segment of the market, photocarrier collection. This suggests a display backlighting, is expected to reach potential route towards next-generation, nearly $1.6 billion in 2014, after increasing at high-efficiency PV devices. There has been a CAGR of 11.1% from the estimated 2009 extensive research into using nanostructured value of $933 million.The automotive segment materials,1,2 such as silicon and gallium is estimated to be worth nearly $267 million in arsenide nanowires. Although these materials 2009, and is expected to grow at a CAGR of have been widely used for high-efficiency 11.5% to reach more than $1.3 billion in 2014. planar solar cells, they have high surface- recombination velocities and, thus, are not ideal General illumination is the fastest-growing materials for nanostructured PV cells. segment, with a 5-year CAGR of 16.4%. Its value is estimated at nearly $565 million in We have developed a promising solar-cell 2009 and is expected to grow to $1.2 billion in module based on vertically oriented and 2014. spatially ordered cadmium sulfide (CdS) nanowires, or nanopillars (NPLs), embedded in A solid-state lighting initiative has been in a cadmium telluride (CdTe) thin film. The CdS/ place for 10 years and is targeted at replacing CdTe combination has relatively low surface- traditional lighting products, such as bulbs, recombination velocity and so is ideal for with LEDs. BCC Research provides a taking advantage of the high surface/junction comprehensive analysis of the progress to date area to promote carrier-collection efficiency. and its overall market potential. Significantly, we have also achieved template- assisted growth of highly ordered NPL arrays High-brightness light-emitting diodes operate on aluminum foil, avoiding costly epitaxial much more efficiently than traditional light bulb growth. products. They use a fraction of the power needed for bulb technology, have much longer For full article see: 10 March 2010, SPIE operating lifetimes, and contain no substances Newsroom. http://spie.org/x39220.xml?highligh that will harm the environment. Different t=x2400&ArticleID=x39220 material structures are used to fabricate these devices, and their fabrication methods are unique.
LED market worth $8.2 billion in 2014 This study will be of interest to those in the 2010-03-16 photonics industry, manufacturers of solid-state devices, microelectronic manufacturers, those Global market for light-emitting diodes for involved with automotive and transportation lighting applications to be worth $8.2 Billion in lighting systems, makers of mobile devices, 2014 traffic planners, municipal administrators, and those involved with general illumination According to a new technical market research report, in homes, offices, and industrial locations. LIGHT-EMITTING DIODES FOR The report also will be of interest to home (SMC018C) from LIGHTING APPLICATIONS designers, builders, and companies engaged in BCC Research (www.bccresearch.com), the the manufacture of deposition equipment. global market for light-emitting diodes (LEDs)
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ANADIGICS Introduces multi-mode, high- family includes the ALT6701, ALT6702, performance power amplifiers ALT6704, ALT6712 and ALT6713 products, 2010-03-16 which are tailored to cover UMTS and LTE bands 1, 2, 4, 12 and 13 that are available Industry’s Most Efficient Power Amplifiers across various geographic locations including for Emerging 4G LTE and 3G HSPA+ Mobile the USA, Japan, Western Europe and China. Market Each of these devices is now available for ANADIGICS, Inc.today introduced a new set of customer sampling; evaluation kits are also multi-mode, high-performance power amplifiers available upon request. Volume ramp into production is aligned with market needs to (PAs) designed for wireless datacards and meet customer design cycles for introduction of handsets for the rapidly emerging 4G Long the industry’s earliest datacard modules for LTE Term Evolution (LTE) and advanced HSPA+ networks. technologies. Key Product Facts and Highlights: These new single-band PAs are built using the fourth generation of ANADIGICS’ patented • ALT6701, ALT6702, ALT6704, ALT6712 and HELP (High-Efficiency-at-Low-Power) ALT6713 are packaged in a 10-pin 3x3x1 (mm). technology to deliver exceptional performance • This family of PAs features the lowest to customers making USB modules and Quiescent current in the industry (3mA). new generation handsets based on the LTE • Each device has been thoroughly standard. characterized under 16-QPSK, 64-QAM and HSPA+ modulations to ensure compatibility Analyst firm Gartner states that LTE is on with high bandwidth applications. track to become one of the dominant 4G • An integrated “daisy chainable” directional technologies for mobile broadband within this coupler with 20dB directivity is included inside decade. By 2015, LTE coverage is expected the package. to reach at least 50 percent of all mobile • This family offers three mode states to subscribers in the United States and Western maximize power-added efficiency at several Europe. The ANADIGICS HELP4 LTE family of power levels during the operation of an LTE PAs has been designed to meet the stringent handset. linearity needs of LTE modulation and offer the highest power and efficiency in the industry. Specific Applications:
“We are proud to continue driving innovation • ALT6701: Band 1 LTE wireless devices; Band in power amplifier technology for mobile 1 (IMT) WCDMA/HSPA applications as the industry expands beyond WCDMA toward LTE for 4G applications,” wireless devices; and Band Class 6 CDMA/ stated Prasanth Perugupalli, Director of EVDO wireless devices • ALT6702: Band 2 LTE Wireless RF Products Line at ANADIGICS. wireless devices; Band 2 (PCS) WCDMA/HSPA “With the HELP4™ family, we have reduced the average current consumption by an impressive wireless devices; and Band Class 1 CDMA/ 30% over previous generation PAs. We EVDO wireless devices • ALT6704: Band 4 LTE also continue to lead the industry in terms of wireless devices; Band 4 (IMT) WCDMA/HSPA performance in current savings at the frequently used low power levels in handsets.” wireless devices; and AWS/KPCS CDMA/ EVDO wireless devices • ALT6712: Band 12 ANADIGICS’ new HELP4 LTE power amplifier and 17 LTE wireless devices • ALT6713: Band
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13 and 14 LTE wireless devices second-generation CIGS modules (Copper/ Indium/Gallium-De Selenide).
LEDs: The 2009 Market Review One of the benefits of CIGS technology is that it 2010-03-10 can be used to generate more electricity under the same light conditions than other currently LEDs: The 2009 Market Review shows strong available technologies and therefore, has a recovery for both LEDs and OLEDs, and a higher output. “The conversion efficiency of banner year for HB-LEDs in 2010. CIGS is very stable over time and this means that the electrical output will remain without EPIC, The European Photonics Industry significant changes over the years,” says CMD, Consortium (www.epic-assoc.com) announced adding that “the indium and copper component the release of LEDs: The 2009 Market Review. has the ability to absorb the solar spectrum and The report, which is distributed exclusively to this allows up to 99% utilisation in the first few EPIC members, tracks the response of the microns of the material”. lighting and display industries to one of the most difficult economic crises in recent year. The absorption capacity makes the indium/ HB-LED and OLED unit production figures as copper an excellent and efficient medium as well as revenues have been summarized for a PV material; moreover, it also has a small major players around the world for the 2-year amount of gallium/deSelenide that covers period of 2008 and 2009. The HB-LED sector the entire solar spectrum, optimising solar showed a strong recovery during Q-3 and radiation absorption. Gallium also increases the Q-4 of 2009, led by backlighting of flat-panel current and the efficiency of the solar cell itself. displays. HB-LEDs are underperforming in the Cell conversion efficiencies decrease more general lighting segment due to the presence slowly over time with CIGS, offering a notable of lower–cost, energy-efficient lighting solutions increase in Kwh/Kwp and implying “that CIGS involving halogen and fluorescent technologies. is the technology of the future”. Performance of bellwether companies is “The projected production of the installation an important indicator of the commercial was slated to produce 1,100 Kw but our initial development of solid-state lighting. In its results have demonstrated that the actual analysis, EPIC shows that the production of production may be more than 1,100,000 kw/h HB- LEDs should reach record levels in 2010 per annum and this further demonstrates and again in 2011. that there are more possibilities for the CIGS technology,” declares CMD in a recent press release.
CDM completes largest CIGS array Power generated by the CIGS array is 2010-03-10 converted and monitored using Solar Max100C central inverters, set up in strings and Largest rooftop CIGS photovoltaic array controlled through MaxConnect Plus. All of the installed in Italy production data is transmitted via Ethernet, allowing for 100% control of the installation. Photovoltaics specialist, CDM, has announced completion of what it describes as “the largest CMD reports that the new CIGS array produces CIGS PV installation in the world”, comprising 18% more Kw/h that another of its PV arrays 3,600 228w panels installed on a rooftop in the using CaTe 275 (75W) modules from First province of Vicenza, Italy. The rooftop array is Solar. located near the town of Orgiano and uses new Currently, CMD has a rooftop installation of
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67KW above its premises where different First Solar will build the Desert Sunlight project technologies can be compared side by side. using its industry leading thin-film photovoltaic “Today’s most influential technologies such as solar modules and providing its project Micro-Morph, First Solar, Polycrystalline, Fuji development, engineering, procurement and Flex and CIGS are feature on our rooftop and construction capabilities. With construction have public access from 9 am to 5 pm Monday- expected to start by the end of 2010 and Friday,” says the company. completion as early as 2013, the project will displace 300,000 metric tons of CO2 per This Orgiano array was developed with the year, the equivalent of taking 60,000 cars support of Espacasa SL (Spain), Yohkon off the road. It will also create approximately Energia SL (Spain) and Global Solar Energy 430 construction jobs. The project’s permit (USA). application has been fast tracked by the Bureau of Land Management. Source: Renewable Energy Magazine www. renewableenergymagazine.com “First Solar is one of the few companies that has all the capabilities required to realize very large, utility-scale solar projects like Desert First Solar Signs Contract with PG&E for Sunlight, which are important in helping our 300 MW Photovoltaic Solar Power Project customers and California reach the state’s 2010-03-09 renewable energy goals,” said Rob Gillette, First Solar chief executive officer. First Solar, Inc. (Nasdaq: FSLR) today announced a power purchase agreement to First Solar has 1,700 megawatts of utility- supply Pacific Gas and Electric Company with scale power projects with power purchase renewable electricity from a 300 megawatt (AC) agreements in North America. utility-scale photovoltaic solar power facility that First Solar is developing in Southern California. About First Solar
The Desert Sunlight project, to be located First Solar manufactures solar modules with near Desert Center in eastern Riverside an advanced semiconductor technology and County, Calif., will have a total capacity of 550 provides comprehensive photovoltaic (PV) megawatts, enough to power approximately system solutions. The company is delivering 160,000 area homes - or about 480,000 an economically viable alternative to fossil-fuel residents. The other 250 MW portion of the generation today. From raw material sourcing project is already under contract to Southern through end-of-life collection and recycling, California Edison. First Solar’s power purchase First Solar is focused on creating cost-effective, agreements with PG&E and SCE are subject renewable energy solutions that protect and to the approval of the California Public Utilities enhance the environment. For more information Commission. about First Solar, please visit http://www. firstsolar.com.
Shakeout Shifts Solar’s Center From Europe to China 2010-03-09
Solar Industry Will Grow to $77 Billion in 2015, but Not Before Bloodletting Resets the Supply
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Curve, Says Lux Research It compares Lux’s demand model for each geography against the expectations of installers Reeling from a stormy 2009, the solar market and project developers, and against projections will soon see lopsided supply and demand for supply-side capacity and production. Among rush back into parity, according to a new report its key findings: from Lux Research. Strong demand growth in Asia and the U.S. will push the market to 9.3 * Capacity remains well above demand GW for $39 billion in 2010, while continued -- signaling violent changes ahead. Expect the price reductions will open new markets and supply and demand curves to move abruptly drive solar to a 26.4 GW market in 2015 for together over the next few years due to $77 billion in revenue. Meanwhile, China -- to company failures - either through firms folding date a large manufacturer of solar modules outright, or becoming “zombies” that still exist and materials, but not yet a large buyer of on paper but produce little or no product. them -- will swing into action and become the Demand will also increase in producing regions world’s largest market for solar in 2015. The such as China, prompted by government report underscores, however, that the renewed subsidies and other factors. balance between supply and demand will arrive only after a wave of company failures and lower * Low-cost x-Si technologies dominate, utilization rates. but thin-film and CSP nibble at the margins. As financing begins to return to solar in Titled “Solar’s Shakeout: Europe Loses 2010, crystalline silicon players will continue Leadership as China Rises,” the report to use low price as a weapon against new analyzes economic competitiveness and other technologies that don’t share its “bankability” or drivers for the industry’s six major technologies: scale. Even so, new technologies such as CSP, crystalline silicon (x-Si), cadmium telluride CIGS, and even HCPV technologies will gain (CdTe), thin film silicon (TF-Si), copper indium at the margins. The future of thin film silicon gallium diselenide (CIGS), high concentrating remains more questionable. photovoltaics (HCPV), and solar thermal -- also known as concentrating solar power (CSP). * Solar adoption will be a multi- decade story. While it won’t meet outsized “We found that solar’s short-term pain will expectations in the near-term, solar will enable it to exceed growth expectations over wildly beat them long-term -- albeit often in the very long-term,” said Ted Sullivan, a senior unexpected ways. At its core, solar is an energy analyst for Lux Research, and the report’s lead and construction industry, not a consumer- author. “The volume of solar installations will oriented one like semiconductors or IT. As grow at a 23% annual rate from 2010 to 2015, a result, its adoption cycle is determined but revenue will grow by just 14%, as prices fall by replacement cycles for residential and due to remaining over-capacity. While current commercial roofs -- typically 15 years to 20 subsidies in China and elsewhere will help years -- and for natural gas power plants, up to soak up some of that capacity, there will be 30 years. widespread company failures throughout the value chain first.” “The continuing glut threatens low-quality and The report updates earlier market size and high-cost players alike,” said Sullivan. “The demand forecasts, extends Lux Research’s decline of firms selling low-quality systems outlook through 2015, and adds three new is intuitive, but over-capacity also threatens geographies -- Czech Republic, New Jersey, developed players like Evergreen Solar and and Ontario -- due to their high levels of Uni-Solar -- which have incredibly innovative subsidies and rapidly developing markets. technologies, but high operating costs and insufficient scale.”
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OSTAR Headlamp and the OSLON ECE, are “Solar’s Shakeout: Europe Loses Leadership available in the finely graded color classes of as China Rises,” is part of the Lux Solar ECE color binning bringing color harmony to Intelligence service. Clients subscribing to this the front of the vehicle. service receive ongoing research on market With a power draw of 5 W and an operating and technology trends, continuous technology current of 1.4 A, the OSTAR Compact achieves scouting reports and proprietary data points in a typical brightness of 300 lm and its 2 mm² the weekly Lux Research Solar Journal, and chip provides high luminance. With this small, on-demand inquiry with Lux Research analysts. high power light source light guide systems can be produced with just two LEDs. This Daytime running light with only two LEDs 2010-03-09 robust component also has the optimum heat removal rate of 6 K/W, making it ideal for the The OSTAR Compact from OSRAM Opto high-temperature zones at the front of an Semiconductors has been developed automobile. OSTAR Compact does not require specifically for use in vehicle headlights. The a reflector or lens. high-power LED is designed for Daytime Running Light (DRL) applications based on the “Light guides are available in many different use of light guides. designs, from a simple rod to complex 3D versions”, said Peter Knittl, Marketing Director for the Automotive Division at OSRAM Opto Its compact dimensions and its capability Semiconductors. “To offer new designs in to drive high currents make it ideal for both variable forms and an alternative to point-like existing and new headlight designs. In DRL designs, you need one thing above all else addition to the usual point-like LED lighting – a small high-power light source.” solutions, linear or two-dimensional designs can be produced with only a small number of Thanks to the SMT package the OSTAR semiconductor light sources. Compact is easy to handle. It will last as long as the vehicle, eliminating the need for replacement and therefore saves on costs. The red and yellow versions of OSTAR Compact can be used for signal lighting.
ROCS: Reliability of Compound Semiconductors Workshop 2010-03-08
Use of LEDs for daytime running light 2010-05-17, Portland, USA applications is on the rise – and not only in top-of-the-line models. These energy-saving The annual workshop on Compound light sources are fast becoming the light Semiconductor reliability will be held one day source of choice in mid-range vehicles as well. before the MANTECH Conference with the With the surface-mounted OSTAR Compact, objective of bringing together researchers, OSRAM Opto Semiconductors is extending manufacturers and users of Compound its offering of LEDs for DRL applications. The Semiconductor devices. The annual ROCS entire automotive LED portfolio of a headlight Workshop usually involves about 50-80 manufacturer can now be perfectly matched participants. The program is typically arranged because these high-current LEDs, such as the into 4 sessions covering a variety of topics
132 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest and types of devices. The format is informal high efficiency rates. Factors like growing with questions for clarification allowed during environmental concerns, encouragement of presentations. Each presentation is about 15 support schemes in form of feed-in–tariffs, minutes in length, with five minutes for specific increased usage of small scale applications questions and comments. Ample time for more and declining polysilicon prices will drive the discussion is allowed during the luncheon and solar PV market in future. breaks between sessions. Registration for the workshop includes the full day of presentations, Although there are a number of companies a copy of the digest of papers, a continental engaged in the manufacturing of PV cells, breakfast, a luncheon and two breaks. Q-cells enjoys a clear leadership in the global PV market. The other major manufacturers URL http://www.jedec.org/home/gaas/ include First Solar, Suntech Power, Sharp, JA preregister.htm Solar, Kyocera, Yingli Green Energy, Motech, Organiser JEDEC Solid State Sun Power and Sanyo. Technology Association, www.jedec.org E-mail address [email protected] The current report gives an overview of Phone 703-907-7540 the global solar PV market, discussing the various technologies, size of the market and geographic distribution. The important solar PV markets like the US, Europe and Asia have Solar Photovoltaic Cell Market Report: The been analyzed. The key trends, drivers of Updated 2010 Edition the market and the challenges faced are also 2010-03-08 discussed in detail. The competitive aspect of
the market is highlighted and the key players Research and Markets announces the addition of the “Solar Photovoltaic Cell Market Report: are profiled with their business strategies. 2010 Edition” By combining SPSS Inc.’s data integration and analysis capabilities with our relevant Solar photovoltaic is emerging as a findings, we have predicted the future growth of major power source due to its numerous the industry. We employed various significant environmental and economic benefits. variables that have an impact on this industry Installations of PV cells and modules around and created regression models with SPSS the world have been growing since 1998 and Base to determine the future direction of the recorded a tremendous growth in 2008. There industry. Before deploying the regression has been a continuous development of PV in model, the relationship between several established markets (like Germany, the US and independent or predictor variables and the Japan), an exceptionally good growth in Spain dependent variable was analyzed using and the emergence of new markets, such as standard SPSS output, including charts, tables France, the Czech Republic, Portugal and and tests. Belgium. Key Topics Covered: Due to the growing demand for renewable energy sources, the production of solar 1. Solar Photovoltaic Market cells and photovoltaic arrays has advanced 2. Major Markets dramatically in recent years. Apart from the 3. Industry Trends conventional wafer based silicon technologies, 4. Growth Drivers there has been an emergence of new 5. Challenges technologies like CIGS (copper indium gallium 6. Competitive Landscape selenide) and CPV (concentrated photovoltaic) 7. Company Profiles which are more cost effective and deliver 8. Global PV Market Outlook
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innovation. We responded to the calls from the Companies Mentioned: EU’s High Level Group on the Competitiveness Q-Cells of the Chemical Industry by further First Solar strengthening our relationship with the value Suntech Power chain. By adding our voice to the innovation debate, we are working together towards a For more information visit http://www. common goal for an innovative and sustainable researchandmarkets.com/research/123685/ Europe.” solar_photovoltaic The final report will be presented to the European Commission and will be made EU project discusses material research available to the public. needs 2010-03-05 Oxford Instruments Launches 2010 EU project discusses the future of innovation & Seminars research for sustainable chemistry 2010-03-05
Sectors which are among the most important Oxford Instruments Plasma Technology will for sustainable development and future hold co-host several seminars & workshops innovation in Europe have joined forces this year in conjunction with key research with the chemical industry at a workshop institutes & universities - these will be on a hosted by the EU Technology Platform for variety of topics. Speakers will come from Sustainable Chemistry (SusChem) this week in the host universities and from a number of other institutes and industry, in addition to Luxembourg. Over two days, the five sectors - automotive, solar energy, solid state lighting, process and applications experts from Oxford civil engineering and aviation/aerospace - have Instruments Plasma Technology, providing their shared their future research needs with the in-depth knowledge of the chosen topic. chemical industry and European Commission. 15-16th July 2010 New Frontiers in Plasma Nanopatterning These industries depend on the chemical Hosted by The Molecular Foundry, Lawrence industry to bring forward new materials to Berkeley National Laboratory, CA, USA enable them to develop products which will make Europe more competitive and more 27-28th September 2010 sustainable. The chemical industry provides Dry processing for Nanoelectronics and materials for innovation across all industry Micromechanics: growth, deposition and sectors, so this event marked a new direction in etching Hosted by University of Freiburg/ value chain cooperation which will continue at IMTEK, Germany the annual Stakeholder Event, being held this year in Lyon, France on 4 May. The output of The company is planning to hold a Seminar/ the workshop will be presented to the European Workshop in the UK, date to be confirmed. Commission and will serve as input to the 8th Programmes are available , so to find out more Framework Programme for Research (FP8). about each seminar and/or to register for a place email: [email protected] SusChem’s Ger Spork said “At the Hybrid Workshop in Luxembourg, we have put our Oxford Instruments’ etch, deposition and heads together with other leading industries growth systems provide process solutions to define the future of materials research and for the micro- and nanometre engineering of materials for semiconductor, optoelectronics,
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MEMS & microfluidics, high quality optical emissivity-corrected pyrometry at 3 different coating and many other applications in micro- radial positions and enable an absolute and nanotechnology. temperature control of the grow on all heating zones of the succeptor. The accuracy of the To find out more about Oxford Instruments temperature measurement after calibration Plasma Technology’s process and product by LayTec’s new AbsoluT tool is better than offering see www.oxford-instruments.com ±1 K. The online growth-rate analysis with the accuracy up to ±0.001nm/s is, of course, also possible. Product news
In-situ seminar in Lake Tahoe on 24 May 2010-04-21
LayTec invites all customers to its 13th in-situ seminar
LayTec invites all customers to its 13th in-situ seminar to be held in conjunction with the IC MOVPE XV in Lake Tahoe, USA on May 24 at 7-9 p.m. If you have not received the invitation or if you are not a customer yet, but interested in in-situ monitoring, please feel free to register at [email protected]. Additionally to this, the Curve® head is an ideal tool for strain control and wafer bow measurements. It helps to minimize bowing- related non-uniformities in GaN LED production First EpiCurve®Triple TT sold! on 4” and larger wafers. For further information 2010-04-21 please contact [email protected]
LayTec is proud to announce the sale of an EpiCurve®Triple TT to a leading LED manufacturer in the USA. Tom Thieme – LayTec‘s new manager for business development in China and Taiwan The in-situ system will be used for GaN 2010-04-21 LED production in a multiple-ring MOCVD reactor. The unique combination of a Curve® LayTec is further enforcing its sales team and optical head for wafer bowing control and 3 welcomes Tom Thieme – the new manager for EpiTT heads for temperature and reflectance business development in China and Taiwan. measurements (Fig. 1) will be the first metrology system of this kind.
EpiCurve®Triple TT is specially designed for application in huge showerhead MOCVD reactors like CRIUS for GaN LED production and GaN/Si applications. Like in LayTec’s EpiTriple TT, the three EpiTT heads of EpiCurve®Triple TT measure reflectance and
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While LayTec’s market share in Asia is growing, personalized product solutions and versioning Mr. Thieme is now appointed to coordinate the of single products for the flexible and printed sales activities, to strengthen the cooperation organic electronics market. As part of the go- network and to work directly with customers to-market strategy, InnoPhysics is developing and LayTec’s distributors in China and Taiwan. a PlasmaPrint toolkit integratable with existing table-top R&D print platforms. Tom Thieme brings into LayTec not only a profound technical and scientific background In a joint effort Holst Centre and InnoPhysics as a graduate in process engineering, but also have shown the feasibility of surface tension 14 years experience in international sales and contrast patterning and printing as a valuable marketing. Until now Mr. Thieme has worked technology for the production of energy efficient at Atotech (a part of the Total Group) and OLEDs. This successful concept validation has focused on electrochemical process solutions led to a collaboration between Holst Centre for electronic and semiconductor industry. and InnoPhysics to further develop the surface He gathered valuable experience in product tension contrast patterning and printing method integration, establishing and managing product and explore a number of new processes to portfolios, customer networking, relationship create patterns of functional materials on management and many other fields. flexible substrates using the InnoPhysics technology. We welcome Tom on board and are confident that his work will further boost LayTec’s RonnAndriessen, Program Manager Large- activities in Asia! Area Printing at Holst Centre: “We are very pleased to see that a young startup company is able to benefit from the collaboration within our open innovation environment. We wish Plasma printing on the way InnoPhysics a successful next step in bringing 2010-04-20 its technology to the market.” AlquinStevens, CTO of InnoPhysics: “The validation of our InnoPhysicsB.V., a Dutch startup company from technology by Holst Centre, as a global the Vision Dynamics Group, has demonstrated research institute in the field of printed a proprietary Digital-on-Demand PlasmaPrint electronics, is of vital importance in our first hardware solution that enables software steps towards the market. The collaboration patterned surface functionalization, etching has resulted in a speed up of application and and deposition of functional coatings on thin product development, and the open innovation (plastic) substrates. After successful feasibility environment has provided us access to the studies performed at Holst Centre in the area market and its players.” of flexible electronics such as OLED lighting, InnoPhysics is now developing a go-to-market strategy for the new technology.
Printed electronics is a fast growing market with a large variety of different applications such as RFID tags, organic and polymer LEDs and solar cells. The proprietary InnoPhysics technology solution operates on a large variety of plastic substrates in ambient conditions, at room temperature and it provides flexibility in patterning, i.e. mask-less, which is especially important during the prototyping phase,
136 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
LED lighting ‘to replace incandescent bulbs’ out research highlighting the benefits of GaN 2010-04-19 compound semiconductors in the development of energy-efficient transistors. The uptake of LED bulbs is set to increase significantly following a ban on incandescent He said that “by using GaN transistors, lightbulbs. mobile telephone operators could significantly decrease their energy consumption and Warner Philips, co-founder of light-emitting reduce their CO2 emissions by several tens of diode (LED) start-up business Lemnis Lighting, thousand tonnes”. has said that within five years, 80 to 90 per cent of bulbs will be LED-based. Professor Bolognesi argued that to provide the best efficiency and transfer rates, electrons Mr Philips told Business Week that his must flow through the transistor material as company plans to launch a full range of LED easily as possible and GaN-based components lighting products to help replace incandescent offer less resistance than comparable bulbs at this year’s Lightfair convention, which technologies. is being held in Las Vegas next month. Elsewhere, the Institute of High Pressure The firm introduced its first LED bulb capable Physics in Warsaw recently highlighted its of being plugged into a standard lightbulb port role in the development of GaN compound more than four years ago. semiconductors over the last 30 years.
However, the fact the EU has now banned the Institute director Professor Sylwester Porowski use of incandescent bulbs across its member said in an interview with Polish Market Online states - with phased removal of these products that the process for delivering high-quality, taking place over the coming years - means defect-free GaN crystals is one which has been that the market is likely to see increasing a high priority for many years now. demand in the future.
Lemnis stated that demand for lighting makes up 19 per cent of the world’s energy needs Avago unveils OFN order at present. However, the introduction of 2010-04-16 more energy-efficient lighting solutions could significantly reduce this requirement in the A new $40 million OFN order has been years ahead. announced by Avago.
Avago Technologies has announced a new GaN transistors ‘are highly efficient’ $40 million (£25.9 million) order for its Optical 2010-04-19 Finger Navigation (OFN) active components.
GaN transistors could hold the key to greater The company has stepped up its OFN energy efficiency in the future. development programmes in the last 18 months and as, a result, has secured a significant order Gallium nitride (GaN) transistors could become from an unnamed OFN module manufacturer. the cornerstone of energy-efficient electronics in the future, a new report has argued. Khin-Mien Chong, Avago’s vice-president and general manger for navigation interface Colombo Bolognesi, professor for millimetre- devices, said: “This order confirms Avago wave electronics at ETH Zurich, has carried as the leading developer and manufacturer
April/May 2010 www.compoundsemiconductor.net 137 news digest ♦ compound semiconductor of optical navigation sensors for a host of smallest ever. Due to the margins that their applications, including mobile platforms.” designers have been able to reserve between the operational and maximum specified He added that the order is a vindication of the parameters for the core devices (such as company’s decision to increase its development operating temperature and voltages), in this area. “Advantech prides itself on bringing the The firm specialises in the production of latest technologies to market,” says Vagan III-V compound and silicon semiconductor Shakhgildian, President and Chief Operating technology, as well as analogue, mixed- Officer of Advantech. “After much research and signal and optoelectronics components and development, we can now say that we have subsystems. harnessed the power of this technology and can deliver the benefits to our customers.” Its products have a range of applications As winner of Canada’s 50 Best Managed - predominantly in the fields of wireless Companies Program for three consecutive communications, wired infrastructure, industrial years and winner of the Best Overall Company and automotive electronics and consumer and of the Year and the best R&D company in computing peripherals. Quebec (PME) at the Mercuriades Award, the Advantech’s R&D program has benchmarked some of the industry’s most innovative Advantech Introduces Wireless Miniature products. GaN Power Amplifiers 2010-04-16
Ku-band products last 80k hours and are Unique AC powered Acriche LED reaches claimed to be the smallest in the world new peaks 2010-04-15
Canadian based firm Advantech which Seoul Semiconductor 100 lumens/watt LED is specializes in wireless networking solutions, in mass production and 150 lm/w version will today reveals its new range of solid state power follow by end of 2010 amplifiers (SSPAs) and Block-Up Converters
(BUCs or SSPBs) which use GaN technology. Seoul Semiconductor has announced its Feedback from the first customers using the G latest development in its Acriche, the only series is said to be extremely positive. semiconductor light source that can be driven GaN amplifiers offer considerably better by an alternating current power source without performance and efficiency than their the need for an AC-DC converter. The result is conventional GaAs based counterparts. They a significant reduction in cost and energy when are claimed to have a better reliability and are compared to standard DC LED technology. also lighter and more compact. Due to the core device parameters (such as operating In addition, in the case of some LEDs, using temperature and voltages) capable in GaN the AC-DC converter may lead to a reduced based devices, the MTBF (Mean Time Between life for the bulb if the converter has a shorter Failures) for the Ku-band is an impressive average life than the LED. 80,000 hours. GaN amplifiers also offer better gain and power over extremely broadbands. The Acriche also claims to offer a reduction in the environmental impact of lighting, Advantech claim that the new line comprising reducing carbon dioxide emissions without a 50W, 100W and 250W versions are the compromise in brightness or quality of light and
138 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest is claimed to have a lifespan of over 35,000 Avago reveals new HB LEDs hours. 2010-04-15 A new HB LED product has been launched by Since achieving a luminous efficiency of Avago. 100 lm/w in February, the research and development sector has been focusing on the Avago Technologies has announced the launch 150 lm/w model and the company aim high of a new high-brightness light-emitting diode volume production of this version to begin by (HB LED) - the ASMT-Ax3x Power LED. 2011. The firm has expanded its range of three- Acriche is suitable for many residential and watt, high-power LEDs for use in solid-state commercial lighting applications where the applications and the ASMT-Ax3x Power LED main source of available power is AC. is capable of an output of 113 lumens with a viewing angle of 140 degrees - making it suitable for backlighting of advertising displays, channel letters and contour lighting.
It is encapsulated in a heat and UV-resistant silicone shell, with multiple HB LEDs capable of being fitted to a single heat sink - making thermal design for its users more straightforward.
Avago offers a range of LED products, coming in a multitude of colours including cyan, amber, red, deep red, blue, green, white and yellow.
The European Union’s legislation has already The firm was founded more than 40 years banned the sale of incandescent light bulbs of ago and specialises in the development of more than 100-watts (since September 2009), compound III-V semiconductor-based products. although bulbs in stock may still be sold. The It currently employs more than 1,000 design U.S. is waiting until January 2012 to take the and product engineers and holds more than same step. 5,000 patents in the US.
Hence competition among LED manufacturers will become even more rife in the replacement DuPont Microcircuit Materials expands of halogen lamps, incandescent light bulbs and printed electronic offerings fluorescent lighting with LED technology. 2010-04-14
Two of the world’s largest lighting companies New silver conductive inks target touch screen already have products, for lighting applications, and OLED Markets in mass production using the Acriche. Furthermore, more than 100 companies are DuPont Microcircuit Materials (MCM) is beginning to utilize the Acriche in various expanding its portfolio of silver conductive inks applications. formulated for use in printed electronics, to meet the need for low-cost processing in the high-growth and emerging markets for Touch Screens and devices such as Organic Light Emitting Diodes (OLEDs). The new screen
April/May 2010 www.compoundsemiconductor.net 139 news digest ♦ compound semiconductor printable inks include: DuPont 7723, a low encapsulating layers that are compatible temperature firing silver ink suitable for printing with many substrate surfaces including on glass, and DuPont 9169, a low temperature polyester, glass, and ceramic. MCM ink curing Ag ink designed for flexible substrates. technologies are suitable for screen print, flexo, gravure, photo-imaging, pad printing, “DuPont Microcircuit Materials has developed and other processing techniques. Ink jet a broad range of conductive inks for printed materials are in development. Printed electronic applications, and we continue to electronic materials include biomedical sensor advance our technology offering by customizing materials, flexible display materials, LuxPrint® materials for specific applications to meet our electroluminescent materials, membrane customers’ needs better and faster,” said Walt touch switch materials, materials for printed Cheng, global business director -- DuPont batteries, printable materials for printed wiring Microcircuit Materials. “We look at where the boards, Radio Frequency Identification (RFID) market is expanding, target key areas where antennae materials, Solamet® photovoltaic more cost-effective solutions are needed metallizations, touch sensor materials and and pursue those areas most aggressively. other printed electronic applications. Touch Screen technology, OLED and thin film photovoltaics are all areas where we expect to grow by helping our customers succeed.”
According to industry estimates, the printed electronics market is expected to reach $10 billion by 2012, and as much as $300 billion by 2025. Estimates for growth in the global Touch Screen module market are similarly strong with a forecast to grow to $6.4 billion by 2013, and the market for OLED lighting and displays could reach more than $6.7 billion in 2014. DuPont MCM continues to build its portfolio of products for these and other high-growth markets, with leading materials including DuPont™ Solamet® Skyworks unveils new power amplifier photovoltaic metallization inks for higher products efficiency solar cells. 2010-04-13
New DuPont 7723 delivers excellent adhesion Skyworks Solutions has announced the release to Indium Tin Oxide (ITO) coated glass, it of five new power amplifier modules (PAMs). is lead-free and solderable, ideal for use in Touch Screen devices. DuPont 9169 has Each of the devices uses a single gallium extremely high conductivity, strong adhesion arsenide (GaAs) monolithic microwave to ITO coated flexible substrates, low contact integrated circuit and includes on-board bias resistance to ITO, and fine line capability. circuitry, as well as input and inter-stage Both products are recommended where high matching circuits, Semiconductor Today performance on coated substrates is critical, reported. such as in Touch Screens and OLEDs. Skyworks stated: “The fully matched ten-pad These are the latest in the broad and growing surface-mount PAMs support all required line of DuPont MCM functional inks used modulations for a given frequency band, for forming conductive traces, capacitor including CDMA, WCDMA and LTE handsets and resistor elements, and dielectric and
140 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest and datacards, as well as enabling a variety H-Square unveils new ergonomic tweezers of compatible baseband/radio frequency 2010-04-13 architectures.” Customized tips and spring loading provide The devices are manufactured using the consistent force eliminating strain on the company’s indium gallium phosphide GaAs operator heterojunction bipolar transistor BiFET process and have been designed to supply positive DC H-Square Corporation which has been voltage supply operation, while maintaining manufacturing cleanroom equipment used high efficiency and good linearity. in the semiconductor industry since 1975, yesterday unveiled the Nu-twEZer. Skyworks has a current share price of $15.70 (April 13th, 14:42 BST) and is floated on the Since their commercialization over 500 years US Nasdaq stock exchange. It specialises ago, tweezer design has hardly progressed in the manufacture of linear products, power so the new design has not come a minute too amplifiers, front-end modules and radio soon. The ESD safety protects semiconductor solutions for handset and infrastructure chips from damage and stray particles from equipment. sticking to the tool, improving cleanliness.
Sharp launch First Ever Four-Primary-Color 3D LCD TV with LED backlight 2010-04-13
LED backlight attributed to 1.8x increase in brightness
Japanese firm Sharp claims that in the new 3D LCD television, undesirable double contour “ghost” images (also known as crosstalk) have been eliminated. The product is alleged to possess the industry’s highest brightness at 1.8 times higher than that of conventional displays due to the improvised LED backlight system. Furthermore, the new product reduces the chances of Carpal Tunnel Syndrome, which The full screen LED backlight uses hundreds can be caused from continued use of tweezers. of white LED lights located directly behind the panel to recreate high definition pictures with High temperature and chemical resistant tips a superior picture quality. Proprietary LED are available and they can be customized to fit technology delivers images that are brighter non-standard chip trays and securely hold odd with vibrant colors and deeper blacks. Power shaped objects. Optional color coding would consumption of these sets is up to 40% less prove useful in a cleanroom environment and a than conventional LCD TVs. range of spring tensions are also available.
The Nu-twEZer is available for less than $200.
April/May 2010 www.compoundsemiconductor.net 141 news digest ♦ compound semiconductor
LED efficiency ‘boosted 20%’ watt incandescent, the bulb will use less than 7 2010-04-12 watts. The new platform has a larger footprint than Cree’s XP family and is claimed to offer New manufacturing process could boost LED very high efficacy at very high drive currents. efficiency. The thermal resistance of the XM platform is 2 degrees C per watt and is a massive Research carried out by the National improvement on the Cree XLamp XP-E LED. Renewable Energy Laboratory (NREL) has shown how new manufacturing processes Chuck Swoboda, Cree chairman and CEO could boost light-emitting diode (LED) efficiency remarked “We continue to set the pace for LED by 20 per cent. performance, establishing new benchmarks that make you wonder why anyone would Technology Review reported that by combining consider last-century’s energy-wasting yellow-green with other coloured LEDs and technology.” by utilising solar module manufacturing “This new platform continues Cree’s well- techniques, the energy efficiency of creating established record of turning R&D innovations white light products could be improved by 20 into products,” he added. The bulbs are per cent. expected to be commercially available from Fall 2010. A breakthrough came when scientists were able to layer indium and gallium nitride compound Along with GE who announced their 40-Watt semiconductors to bridge the gap between LED equivalent last week, Cree are joining the different sized crystals, thereby improving LED lighting revolution to make the relatively efficiency over phosphor-based LED designs. energy-inefficient and environmentally unfriendly incandescent bulb obsolete. Angelo Mascarenhas, team leader for solid- state spectroscopy in the Centre for Basic Cree’s products families include LED fixtures Sciences at NREL, stated: “If you try to do it in and bulbs, blue and green LED chips, high- one shot, the whole thing will be defective. You brightness LEDs, lighting-class power LEDs, have to grow a sequence of layers in a step- power-switching devices and radio-frequency/ wise fashion.” wireless devices.
NREL is the primary laboratory for research into renewable energy and energy efficiency in Osram introduces System Integrator team the US. It began operating as the Solar Energy to customize LED lighting solutions Research Institute in 1977, but later changed 2010-04-12 its name in 1991. Projects will be speeded up by the link between LED users and specialists from OTE sectors Cree go green with new LED alternative to 60-Watt incandescent lightbulb OSRAM Opto Semiconductors which 2010-04-12 manufactures LEDs, Infrared components, High-Power Laser Diodes and Intelligent Thermal resistance of new platform is a 350% Displays says the new concept which will improvement on flagship predecessor provide an interface between the customer and the application. Cree today unveiled their latest product, the XLamp XM LED which delivers light output of Experts from optics, thermal management and 750 lumens at 2-Amps. Equivalent to a 60- electronics will liaise with the appointed system
142 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest integrator in order to simplify communication conditions. This will provide army personnel with with the customer and speed up the project. a full range of detection capabilities which can be adapted for used in complete darkness. Projects could involve applications in the signage industry and for the design of LED Having to adhere to extremely stringent conditions luminaires. If requested to do so, the integrator in an often harsh environment, the products will also coordinate all the activities necessary have undergone extensive shock, vibration and for the successful completion of a project. environmental stress screening and with their high-volume manufacturing capabilities, Kopin “The network therefore offers a complete are hoping to expand by taking their business to solution from a single source for various a number of Defence Organisations. target groups such as architects, luminaire manufacturers and anyone interested in LED technology”, said Sebastian Lyschick, Project Manager at OSRAM Opto Semiconductors. Connector Optics purchases Riber MBE machine He added, “As a link between LED users and 2010-04-09 specialists from the OTE sectors, the system integrator can coordinate entire projects or A Russian firm has purchased an MBE49 various aspects of such projects.” machine from Riber for the development of III-V semiconductor-based nanostructures.
Russian company LLC Connector Optics has Kopin demonstrate Advanced Thermal purchased a molecular beam epitaxy (MBE) Imaging Eyepieces at International Defense, machine from Riber to help in the development Security and Sensing Symposium 2010-04-12 of III-V semiconductor-based nanostructures.
Kopin Corporation, manufacturer of HBTs and The firm hopes to use the device to further its ultra-small LCDs today introduce a new family research into the development of vertical cavity of plug-and-play eyepiece products for use in surface-emitting lasers and photodetectors for military applications optical data communications.
Connector Optics stated that Riber’s MBE49 The standard eyepiece model which may be machine is perfect for the job, as it is the most hand-held, used in tripods, vehicles or headgear, adapted system to the production of highly dissipates less than 155 mW while displaying demanding nitride-based optical components. full-rate video at 60 Hz and less than 20 mW in low-power standby mode. It has been fully “We were impressed by the performance of the qualified by the U.S. Army’s Thermal Weapon Riber MBE machines and by the quality of the Sight Bridge program and will be introduced optical device structures obtained using the alongside custom eyepiece solutions based on MBE49,” commented Leonid Karachinsky, chief the new CyberDisplay 640M LVR microdisplay. executive officer of Connector Optics. The latest CyperDisplay technology is claimed, by Kopin, to have near instant-on capability, Riber developed its first MBE machine in superior reliability and uses an ultra-low-power 1978 and has been at the forefront of MBE active matrix liquid crystal display (AMLCD). technology ever since. It stated that MBE The displays are alleged to use the lowest power materials are crucial to the development of and have a constant contrast ratio over a wide compound semiconductors, such as gallium range of operating temperatures and brightness nitride and silicon carbide.
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Obducat receives order for Nano Imprint manufacturing line to New York based firm Lithography (NIL) system from CNRS Solartech Renewables which specialize in 2010-04-09 advanced photovoltaic panels.
System to be installed at the largest innovation Photovoltaics (PVs) are cell arrays which centre for micro- and nanotechnology of Europe convert solar radiation to DC electricity and materials used in their manufacture include The Eitre 6 will be installed in the Plateforme CdTe. Technologique Amont (PTA) clean room at the MINATEC campus, part of the Centre National These thin film products are currently not as de la Recherche Scientific (CNRS) in Grenoble. efficient as their traditional crystalline silicon- The machine will offer imprint areas of up to 6” based counterparts as the panel sizes need to and be used for research in nanoelectronics be far greater to provide the same power. The and photonics. advantage is that they offer a considerable cost reduction as they utilize a semiconductor gas The ordered model will have a number of rather than costly solar grade silicon to deposit options apart from the standard features and a thin film of semiconductor material on the will comprise a complete range of imprint glass panel. methods, including thermal NIL, hot embossing, UV NIL, as well as Obducat’s proprietary The Solartech factory will create up to 100 Simultaneous Thermal and UV imprint process. fulltime jobs and Roger Little, Chairman and CEO of Spire Corporation stated “Solartech is The Eitre range is suitable for Research & responding to the need for more U.S. based Development purposes and allows replication manufacturing for PV modules.” of patterns in the micro- and nanometer range. It has a proprietary design of the He added “With the federal and state incentives heater, embedded in the substrate chuck, for PV systems now in place, the U.S. market which provides a homogeneous temperature has become the fastest growing in the world. It distribution across the whole imprint area. is projected to be more than two gigawatts by The uniform heating and a wide range of 2011, with as much as a one gigawatt shortfall temperature settings, makes it possible to use of U.S. based manufacturing.” a wide range of imprint polymer.
“We are very proud that the renowned research Thorlabs introduces turnkey broadband community at MINATEC now will have access SLD sources in 1310 nm and 1550 nm to our NIL technology. It’s a very prestigious versions order” said Lars Tilly, CEO of Obducat. 2010-04-09
S5FC series Benchtop Sources to be used Spire and Solartech Renewables seal deal in Optical Coherence Tomography (OCT), on PV modules Imaging Systems, and Fiber Optic Gyroscopes 2010-04-09 (FOG)
The aim is to improve efficiency by replacing Thorlabs manufactures photonic equipment traditional crystalline silicon-based solar panels including tunable lasers, optical detectors, with thin film products motion control equipment and various imaging systems. Compound semiconductor epitaxy foundry Spire, will provide a new PV module
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The chip is capable of operating at a range of frequencies - from 900 MHz to 5.8 GHz - and is optimised for use in wireless audio, video and data transfer. It also supports streaming applications and RF connectivity in the 2.400 GHz to 2.485 GHz unlicensed ISM band.
The ML2730 has seen the incorporation of a power amplifier and low-noise amplifier on to the same chip - thereby boosting energy efficiency through improved power output and also providing robust wireless links for users. The company which has offices in the US, Europe, Japan and China yesterday unveiled RFMD’s products have uses in a range of its new Superluminescent Diode (SLD) Light sectors, including in cellular handsets, wireless Sources. Composed of InP SLDs manufactured infrastructure, wireless local area networks, by TQE, a subsidiary of Thorlabs formerly cable television, broadband and aerospace and known as Covega, both wavelength versions defence. use Single mode (SM) and polarization- maintaining (PM) fibers. The firm is headquartered in Greensboro, North Carolina and operates design and The LCD interface provides high temperature manufacturing facilities across the globe. stability and enables users to view and set the current and temperature for each fiber- coupled laser independently. Typical power AQT and Intevac Enter into Business output ranges from 2.5 mW to 30 mW and each Agreement source includes a rear panel interlock, keylock 2010-04-07 power switch, and independent enable buttons. Users can easily configure the interlock to Applied Quantum Technology (AQT) today trigger when doors open, disabling the lasers announced that they have completed a and providing a key safety feature when business agreement in which Intevac will operating in high-traffic facilities. To prevent provide AQT with equipment for its current and damage, the units are also equipped with a future production needs microcontroller which disables the output if input settings exceed laser limits. Applied Quantum Technology (AQT), a leading developer of low-cost CIGS (copper-indium- gallium-diselenide) thin-film solar cells and RFMD delivers new single-chip transceiver (IVAC 13.85, -0.14, -0.10%) , a leader in 2010-04-08 high-productivity manufacturing equipment today announced that they have completed A new transceiver chip has been developed a business agreement in which Intevac will by compound semiconductor and RF device provide AQT with equipment for its current and manufacturer RFMD. future production needs. This announcement coincides with AQT’s latest funding news, which Radio frequency (RF) product and compound was released separately today. semiconductor device manufacturer RF Micro Devices (RFMD) has announced the release Under the terms of this business agreement, of a new single-chip industrial, scientific and Intevac will provide AQT and its manufacturing medical (ISM) band transceiver - the ML2730. partners with manufacturing capacity for the
April/May 2010 www.compoundsemiconductor.net 145 news digest ♦ compound semiconductor production of AQT’s CIGS cells. AQT plans to About AQT receive its first manufacturing system in the Founded in 2007, AQT (Applied Quantum second quarter of this year at its new Silicon Technology) deploys a proprietary process on Valley R&D and production facility. proven manufacturing platforms to produce high-performance, low-cost CIGS thin-film solar AQT has created a unique and highly scalable cells. For more information, visit www.aqtsolar. architecture to produce very low-cost drop-in com. replacements for conventional crystalline silicon cells utilizing Intevac’s production-proven manufacturing platform and AQT’s patented CIGS process technology. Widest ranging series of tuneable lasers introduced by Daylight Solutions “This agreement is an important milestone 2010-04-07 for Intevac as this tool will represent our first shipment in the solar industry,” said Kevin Über Tuner™ Family of External Cavity Fairbairn, president and chief executive Quantum Cascade Lasers (ECqcL™) provides officer of Intevac. “By leveraging our proven gapless coverage from 6.2 to 12.2 µm high throughput lean manufacturing platform, Intevac enables the economic solution to AQT US firm Daylight Solutions provides miniature and the solar cell industry for conventional cell fixed wavelength and broadly tunable lasers in sizes. the mid-infrared wavelength region to markets including Defense, and Scientific Research. AQT is an important business partner and we Quantum cascade lasers often comprise are excited to begin a long term partnership as thousands of very thin III-V semiconductor their manufacturing equipment supplier utilizing layers. The laser sources manufactured by their CIGS process technology.” Daylight Solutions can be operated in both pulsed and continuous wave mode and the new AQT’s innovative approach to CIGS technology, series specify up to 1.6 µm of continuous tuning dubbed CIGS 2.0, allows for continuous in-line in a single laser head. manufacturing, which simplifies and streamlines the manufacturing process, resulting in the highest projected capital utilization efficiency The Über Tuner™ range is claimed to represent in the industry, while dramatically reducing cell a new standard in commercially available costs. broad tunability in the mid-IR and will be suited to explosives and chemical warfare agent “This agreement with Intevac is a major step detection and hyperspectral imaging. towards capitalizing on AQT’s breakthrough The patented ECqcL™ technology combined CIGS 2.0 approach,” said Michael with recent advances in broadly tunable QC Bartholomeusz, chief executive officer, AQT. gain media has allowed for the engineering of the advanced Über Tuner™ cavity. This is “Our leverage-based business model depends claimed to have the best precision tuning over on strategic partners like Intevac in order the broadest wavelength range available to to address the three critical success factors date. required by the new PV market realities; scalability, aggressive cost reduction and With extreme robustness and reliability, continuous technical advancement. Intevac Daylight Solutions have claimed their previous enables AQT to address our mission to achieve laser products have from 1,000 to 10,000 hours the highest cost/performance ratio of any solar of real-time operation. cell manufacturer.”
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leadership, technological innovation, customer “Once again, we are delivering on our service, and strategic product development in a strategic plan to expand wavelength coverage variety of sectors. in evermore flexible packages” says Dr. Timothy Day, CEO/CTO of Daylight Solutions. AZUR SPACE is now planning to enter the “The Über Tuner™ is productizing performance healthcare market and develop its GaAs that our customers have asked for again and technology for medical applications such again. We are pleased to make such broad as X-ray detectors and is optimistic about a tuning available as a standard product.” breakthrough innovation.
AZUR SPACE solar cells win Frost & RF Integration collaborate with Agilent Sullivan Best Practices Award in Advanced Radio Frequency IC (RFIC) 2010-04-07 development 2010-04-06 German based AZUR SPACE is acknowledged with the “2009 World Solar Power Industry Agilent Technologies today announce that their Growth Leadership Award.” GoldenGate software has been selected by RF integration to enhance their RFICs AZUR SPACE is the sole manufacturer of GaAs solar cells in Europe and one of only RF Integration provides custom solutions to the three GaAs based cell providers worldwide. It defence, industrial and consumer markets and uses MOVPE growth technology to produce focuses on improving RF performance, power GaInP and GaAs on germanium substrates to consumption, cost and size. Working with SiGe, produce very high (greater than 30%) efficiency CMOS, GaAs or GaN processes in advanced solar cells used in space and custom-designed process nodes below 65nm they have opted PV systems for terrestrial applications. to use the simulation accuracy, capacity and The company also uses varying grades of performance benefits offered by GoldenGate in Czochralski-grown materials in the production their customized RF Systems-on-a-Chip. of its silicon based solar cells employed in deep Benchmarking tests have shown a 50% space missions. decrease on previous simulation times of full
and transmitter chains. The company which claims to produce the best solar cells for satellite applications has been U.S. firm Agilent Technologies offers technical driven to improve the technology and mass solutions to the compound semiconductor, production capability of solar panels whilst electronics and chemical analysis sectors reducing the manufacturing costs in order and serves customers in over 110 countries. to promote this renewable energy source. GoldenGate is a subsidiary of Agilent’s RFIC With 38% efficient solar cells for terrestrial simulation, analysis and verification products concentrator applications reported, the first that also includes Momentum for 3-D planar aim is to develop PV cells of 40% efficiency in electromagnetic simulation and Ptolemy collaboration with the Fraunhofer Institute for Wireless Test Benches for system level. Solar Energy Systems ISE. The GoldenGate suite links the RF system, subsystem, and component-level design and Frost & Sullivan Best Practices Awards analysis in a unique RFIC design flow. use industry analysts to compare market participants’ merits and concentrates on “RF Integration’s full transmitter and receiver companies demonstrating outstanding chains simulation results tell a compelling story.
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We are pleased that they selected GoldenGate in ultra-vacuum deposit technologies”, stated for the design of their high-performance Leonid Karachinsky, Chief Executive Officer of RF products” said Paul Colestock, RFIC Connector Optics. product manager, with Agilent’s EEsof EDA organization. More than 180 production systems have been installed worldwide and are dedicated to optical components design and to the mass production Order for a production machine in Russia of radiofrequency components. 2010-04-06
RIBER, the global leader for molecular beam epitaxy (MBE), announces the sale of a JDSU launches Ethernet test application production system to LLC Connector Optics, a 2010-04-06 company based in St Petersburg in Russia. Optical products and network measurement The acquisition of an MBE49 system by a device manufacturer JDSU has announced the Russian semi-conductor industry participant launch of a new testing application. confirms RIBER’s global leadership in the field of MBE – Molecular Beam Epitaxy). JDSU has launched a new test application as part of its J-Complete range of products.
RIBER systems provide great flexibility in processing large-size substrates (multi 4 and The firm’s new J-Profiler package enhances multi 6-inches) to grow IIIV semi-conductor troubleshooting capabilities for testers and based nanostructures. The MBE49 machine is capable of diagnosing problems across acquired by LLC Connector Optics will hundreds of cell sites. be dedicated to manufacturing innovative VCSELs (Vertical Cavity Surface Emitting It has applications in Ethernet Mobile Backhaul Lasers) and photodetectors for optical data networks and is capable of providing automatic communications. and non-intrusive discovery of Virtual Local Area Network, Q-in-Q, Internet Protocol and The MBE49 model is by far the most adapted Transmission Control Protocol/User Datagram system to the production of highly demanding Protocol streams. nitride-based optical components, due to its unique deposit quality, mono-atomic precision Jim Nerschook, vice-president and general and highly purity level. manager in JDSU’s Communications Test and Measurement business segment, commented: The new MBE49 machine will be installed in a “By providing an expert tool that dramatically brand new LLC Connector Optics facility in St reduces test times and requires no network Petersburg. down time, J-Profiler is an excellent new addition to J-Complete and enables unmatched “We were impressed by the performance of the operational efficiency.” Riber MBE machines and by the quality of the optical device structures obtained using the The company stated that its ethos is to MBE49. The reputation of RIBER and the total provide next-generation products for the installed base of RIBER production machines optical solutions and measurement and testing around the world illustrate its foremost markets that make the “unimaginable possible”. expertise in the nanotechnology industry and It is presently in the process of developing confirm its internationally recognized reputation laser, optical communications and broadband
148 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest testing and measurement services. The LMR4 (120V) is UL recognized and the LMR4 (230V) complies with multiple international standards. Fixture makers seeking New LED Module Product Line Brings ENERGY STAR® qualification will have access Cree TrueWhite Technology to Lighting to specification and performance data, including Manufacturers LM-80 reports, which can speed regulatory 2010-04-06 approvals.
Cree Module Makes LED Lighting Design “We’ve never seen or worked with any LED Faster and Easier product as simple as the Cree LED Module,” Cree, Inc. (Nasdaq: CREE) introduces a new said Miroslav Masar, OMS, LED Department class of products designed to accelerate the director. “We anticipate our new downlight will adoption of LED lighting by traditional lighting be available in summer 2010—and that’s less fixture manufacturers and speed time-to-market than six months from when we started working for their new LED-based fixtures. With this new with prototypes of the module. In a fast-paced line of LED module products, Cree customers industry like lighting, this is a keen advantage will now have access to Cree’s award-winning for us.” TrueWhite™ technology allowing them to deliver efficient, high-quality light in a compact, The Cree LED Module LMR4 can be ordered easy-to-use product. now for summer 2010 general availability, and sample evaluation kits are available now The first product in the new line is the Cree directly from Cree’s website, www.cree.com/ LED Module LMR4, created to overcome modules. Demonstrations of the LMR4 can be common design issues manufacturers have seen at Cree’s Light + Building stand (Hall 4.2, faced when trying to incorporate LED solutions G71), April 11-16, 2010 in Frankfurt, Germany. into their lighting fixtures. The LMR4 has also been designed into “Cree customers now have access to our demonstration fixtures that can be seen at industry-proven TrueWhite technology, allowing Disano, Hall 3.1 E21; OMS, Hall 4.2 F10/G10; them to quickly deliver better products to the and LTS, Hall 3.1 A51. market, faster,” said Chuck Swoboda, Cree chairman and chief executive officer. “Cree TrueWhite™ technology is already installed in Kopin demonstrate Advanced Thermal thousands of locations including restaurants, Imaging Eyepieces at International Defense, retail stores, and others that demand both high- Security and Sensing Symposium quality light and energy-efficiency.” 2010-04-07
The Cree LED Module LMR4 uniquely Kopin Corporation, manufacturer of HBTs and integrates driver electronics, optics and primary ultra-small LCDs today introduce a new family thermal management, making the compact of plug-and-play eyepiece products for use in Cree module drop-in-ready. Designed to last military applications. 35,000 hours while consuming just 12 watts of power, it delivers 700 lumens at a warm- The standard eyepiece model which may white color temperature of 2700 with a CRI be hand-held, used in tripods, vehicles or >90. Fixture manufacturers have the option headgear, dissipates less than 155 mW while to include a specially designed heat sink to displaying full-rate video at 60 Hz and less than accommodate specific high-heat applications, 20 mW in low-power standby mode. like downlights for insulated ceilings. It has been fully qualified by the U.S. Army’s
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Thermal Weapon Sight Bridge program and high brightness dual-LED illumination and are will be introduced alongside custom eyepiece targeted towards the high brightness LED, solutions based on the new CyberDisplay(R) solar cell, medical and research markets and 640M LVR microdisplay. Veeco claim that they deliver up to 10 times better throughput and capacity over other systems. Other improvements on the 3 models have been made to the hardware and software measurement capabilities, user interface and reliability.
The Vision64 operating and analysis software also allows user-defined automation and enables stitching of individual datasets so as to produce a single contiguous image. For example, to view spacially topographic features such as peaks and troughs on a patterned sapphire substrate. Information regarding The latest CyperDisplay technology is claimed, surface texture, substrate bow and thickness by Kopin, to have near instant-on capability, and LED efficiency and color consistency can superior reliability and uses an ultra-low-power also be obtained. active matrix liquid crystal display (AMLCD). The displays are alleged to use the lowest Executive Vice President of Veeco Metrology power and have a constant contrast ratio over and Instrumentation Mark R. Munch, Ph.D, a wide range of operating temperatures and stated “We believe the ContourGT platform brightness conditions. This will provide the will help our customers increase yield while army personnel with a full range of detection decreasing their manufacturing costs” . capabilities which can be adapted for used in complete darkness.
Having to adhere to extremely stringent Mitsubishi Electric Installs 600-inch conditions in an often harsh environment, the Diamond Vision Screen at Kumamoto products have undergone extensive shock, 2010-04-05 vibration and environmental stress screening and with their high-volume manufacturing Mitsubishi Electric has installed a 600-inch capabilities, Kopin are hoping to expand by Diamond Vision LED screen system in an taking their business to a number of Defence athletics stadium in Kumamoto City, Japan. Organisations. Japanese electronics firm Mitsubishi Electric has installed a 13.2m by 7.6m display composed of Veeco announces their 10th generation of high luminance LEDs with a 12.5 mm pitch. Non-Contact 3D Optical Profilers 2010-04-06 This display replaces an electric discharge tube screen and offers improvements in terms of Veeco Instruments, manufacturer of contact brightness and resolution. In addition, the new and non-contact metrology solutions introduces screen delivers an 80 percent improvement in its ContourGT Surface Metrology Product energy consumption over its predecessor. Family Equipped with the latest digital screen The new generation of optical profilers use controllers, the display will showcase live videos
150 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest in high-definition in the multiple-use athletics magnetic effect to form different lighting modes, stadium. The venue is one of the main home emphasizing lighting effects and LED lighting stadiums for J2 soccer team Roasso Kumamoto. features. Second place prizes, including RMB 10,000 (approximately US$1,500) each, were Mitsubishi has previously installed smaller given to Jiang Lin, Liu Yanliang, Chen Shan Diamond Vision LCD screens in soccer stadiums and Zhenma Quzong from Tibet University and worldwide. Strengths of this display are said to Gu Weiwei from Tongji University. be an extremely wide viewing angle, and good viewing conditions in any weather conditions, The design work from Tibet University, “Solar including bright, direct sunlight. LED Multi-Functional Butter Lamp,” combines LED lighting and solar energy with traditional The Japanese firm aims to expand its business Tibetan lamp design, and includes integrated further in giant displays for other sports facilities features like cell phone charging. “Guang Ling,” including public athletics stadiums. designed by Gu Weiwei, is portable, and uses sound control and LED features to meet the needs of the deaf or those hard of hearing.
Cree Announces Winners of First Creative Team advisors, Professor Hao Luoxi from LED Lighting Design Contest Tongji University and Professor Yuan Zongnan 2010-04-01 from Chung Yuan Christian University in
Taiwan, received special mentor awards for National Cheng Kung University Wins First their efforts in supporting the students. Cree Cup with “Lighting to Share” Submission Dou Linping, secretary general of the China After seven months of intense competition, the Association of Lighting Industry and member first Cree Cup - Creative LED Lighting Design of the judging panel, commented, “We Contest for China university students jointly were delighted to see so many wonderful organized by the China Association of Lighting designs during the competition and we’d like Industry (CALI) and Cree, Inc. has ended, to congratulate all the winning teams and culminating in an award ceremony held at the universities. We’re happy to see that the China LED Technology and Application Forum. submitted works were not only highly creative Finalist works were showcased in the “China but also functionally sound. As the LED lighting Hotel Lighting Exhibition.” market continues to grow, we will need more and more talents in this field, and we will Nearly 1,000 students, representing continue to offer platforms like this contest to approximately 100 universities in China, students in order to facilitate their growth and submitted hundreds of design entries. Fifty knowledge.” designs were chosen for the final round of judging. Winners were chosen based on Excellence awards were presented to all the following criteria: creativity, practicality, the finalists by the organizing committee. marketability, LED performance, artistic quality Chris James, Cree vice president of market and energy efficiency. The judging panel development, stated, “Cree partnered with consisted of LED industry experts, scholars and the China Association of Lighting Industry to industrial design/lighting application experts. organize this contest. Our core objectives were to develop LED technology as the lighting First prize, including RMB 20,000 source of the 21st century and to discover (approximately US$3,000), was awarded to and motivate highly innovative and high- Huang Jiongzhang, Du Weizheng and Ni Yujun caliber LED design talents We are pleased from Taiwan’s National Cheng Kung University. to see such outstanding works submitted by Titled “Lighting to Share,” the design uses a undergraduates, and we sincerely thank the
April/May 2010 www.compoundsemiconductor.net 151 news digest ♦ compound semiconductor advisors and universities for their support!” Product Supply Uninterrupted Prof. Zhan Qingxuan, a renowned scholar in the building lighting industry, and Professor and The supply of CEL products that come from PhD supervisor at the School of Architecture in NEC Electronics, including RF switches, power Tsinghua University, congratulated the winners amplifiers, low noise amplifiers, optocouplers, and praised the instructions that Cree had solid state relays, lasers, and detectors, will given to the students during the competition. continue without interruption. During the contest, the contestants received extensive support from Cree, from instruction “We are delighted that the uncertainty caused on the techniques of LED design and provision by the pending merger is behind us. Now, of LED components, to the funding of LED without any distractions, CEL and the new components. About Cree Cree is leading the Renesas can confidently bring the best RF LED lighting revolution and setting the stage to and optical semiconductors to market,” said obsolete the incandescent light bulb through Paul Minton, President and CEO for California the use of energy-efficient, environmentally Eastern Laboratories. friendly LED lighting. Merger Impact Minimal Cree is a market-leading innovator of lighting- class LEDs, LED lighting, and semiconductor “Mergers happen, but we are still us. We are solutions for wireless and power applications. still CEL, dedicated to the same great products Cree’s product families include LED fixtures and same great service our customers have and bulbs, blue and green LED chips, high- come to expect. And we are looking forward to brightness LEDs, lighting-class power LEDs, another 50 plus years of working with the new power-switching devices and radio-frequency/ Renesas and serving our key customers and wireless devices. Cree solutions are driving partners,” continued Mr. Minton. improvements in applications such as general illumination, backlighting, electronic signs and For more informationon themerger, please visit: signals, variable-speed motors, and wireless communications. For additional product and company information, please refer to www.cree. http://www.cel.com/merger com. To learn more about the LED Lighting Revolution, please visit www.creeledrevolution. SOURCE California Eastern Laboratories com.
Oxford Instruments Sells Five Module CEL Congratulates NEC Electronics Cluster Tool for growing PV market on Completion of Merger with Renesas 2010-04-01 Technology Corporation 2010-04-01 Oxford Instruments Plasma Technology (OIPT) has just won a contract for a five module cluster California Eastern Laboratories (CEL) tool from Robert Bosch, one of the world’s congratulates our long-standing partner, NEC leading manufacturers of solar cells. Electronics, on the completion of its merger with Renesas Technology Corporation.
The new entity, Renesas Electronics Corporation, continues its 50 year partnership with CEL.
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The System100Pro deposition tool is a ‘Hex switch (WSS) components within it, measured Handler’ providing capabilities for several by channel spacing and degree-count. deposition technologies, allowing multiple process steps to be carried out without a Finisar’s WSS portfolio includes the DWP 50, vacuum break. The cluster tool has the DWP 100, and DWP 100e -- all fully integrated option of integrating a Kelvin Probe for in- high-performance intelligent modules offering situ measurement capability of material work flexible and upgradeable WSS functionality for functions and photo voltage, without a vacuum advanced reconfigurable network applications. break. A key enabler of this highly programmable platform is Finisar’s unique Liquid Crystal on OIPT cluster systems offer high vacuum Silicon (LCoS) switching technology used to options for the handler and process modules, produce the industry’s most feature-rich and resulting in reduced background contamination cost-effective WSS modules. Inherent in LCoS levels, and the ability to cluster different technology is the capability to deliver next deposition technologies. The Bosch system generation flexible grid architectures which also incorporates a high temperature substrate enable carriers to future-proof their networks as table option up to 700ºC, and flexibility of power data rates increase. ramping within the software, thus minimising potential damage at the start of process. “The fastest growing segment in optical Based in Stuttgart, Germany, Bosch develops, networking is the WSS ROADM market,” said manufactures, and markets wafer-based and Rafik Ward, Vice President of Marketing at thin film silicon solar cells that are characterised Finisar. “As the ROADM market expands, by high, stable output with narrow output Finisar is poised to meet the demands of our tolerance. The company has purchased the customers through our 100 GHz, 50 GHz, and OIPT cluster tool for use in research and flexible grid offerings.” development. “We believe Finisar’s LCoS software With the increasing trend towards generating provisioned grid-less engine is a very energy by renewable means, OIPT is interesting technology for the Comcast establishing itself as a key supplier to the network,” said Shamim Akhtar, Director of growing PV R&D market, and has more than Network Engineering at Comcast Corporation. doubled its turnover in this sector compared to “The flexibility of Finisar’s offering between 100 last year. GHz and 50 GHz and flexible grid architecture is a key feature as we migrate our rings/spans from current 100 GHz to 50 GHz grid in phases Finisar Positioned as WSS ROADM Market and later introduce higher data rate lambdas Share Leader beyond 100G on some of our network spans.” 2010-04-01 As noted by Infonetics Research Analyst, Finisar Corporation today announced that it Andrew Schmitt: “Since the launch of Infonetics’ has been positioned by Infonetics Research wavelength selective switch component as the market share leader in WSS ROADM reporting, JDSU had been the market share components in the second half of 2009. leader, but in the second half of 2009, Finisar took the lead based on the strength of its The first edition report, released yesterday by 50 GHz WSS shipments. The transition Infonetics Research, tracks the Reconfigurable from 100 GHz to 50 GHz channel spacing Optical Add/Drop Multiplexer optical network is accelerating, with the 50 GHz segment equipment market and the wavelength selective expected to account for all future revenue and
April/May 2010 www.compoundsemiconductor.net 153 news digest ♦ compound semiconductor unit growth in the WSS market.” parameters such as operating frequency range, mounting configurations, and connector type. For more information about Finisar’s WSS ROADM products, visit: www.finisar.com/ roadm or contact us at: [email protected]. For more information about the Infonetics ROADM NREL and 3M Sign Agreement on Components report, visit www.infonetics.com. Renewable Energy Research 2010-03-31
The U.S. Department of Energy’s (DOE) BC Systems GaN-based Military RF Power National Renewable Energy Laboratory Amplifier Delivers 100 W from 20 to 305 MHz (NREL) has announced a series of Cooperative 2010-04-01 Research and Development Agreements (CRADAs) with 3M, the St. Paul, Minn.-based BC Systems have introduced the Model technology company. RF40015, an RF power amplifier designed for defense applications in which broadband The collaborative effort demonstrates both frequency coverage of 20 to 305 MHz and 3M’s and NREL’s commitments to meeting the RF output power of at least 100 W in Class nation’s clean energy needs by developing AB operation is desired in a compact, rugged technologies that are vital to producing large- package. scale sources of new renewable electricity and fuel at competitive costs. The Model RF40015 combines the latest Gallium Nitride (GaN) RF power transistors with The agreements between NREL and 3M the company’s advanced design and fabrication establish joint investigations in three key techniques to deliver high RF power density in areas of innovation: thin-film photovoltaics, a module measuring only 5.5 x 4.5 x 1.6 in and concentrating solar power and biofuels. weighing less than 2 lb. It has extremely fast blanking speed of less than 5 µs for excellent The CRADAs range from jointly identifying noise performance and low standby power and developing critical aspects of renewable consumption, as well as efficiency of at least energy technology to accelerated testing of 3M 30% and the ability to deliver its full RF power designs and scaling-up successful prototype output into VSWR of 2.5:1. technologies for commercial production. The agreements last for at least one year.
The amplifier incorporates a custom DC-to- “CRADAs like these with 3M not only help DC converter designed and manufactured by shift the nation to clean energy, but they also BC Systems that is highly efficient and allows establish and expand important partnerships the amplifier to operate from a 26 to 30 VDC for product development through technology power source. The unit is fully protected for transfer,” NREL Senior Vice President of over-current and over-voltage conditions, and Commercialization and Deployment Casey has an operating temperature range of -20o C Porto said. “3M’s wide-ranging expertise and to +85o C (-45o C to +95o C non-operating). It commitment in these fields makes this a key can be specified with an integrated low-power partnership for the laboratory.” sampling port for RF output monitoring as well as a directional coupler. “3M is excited for the opportunity to tap into NREL’s expertise and understanding of a BC Systems can customize the DA Module to variety of solar modules and the interplay meet various military standards as well as for between the materials and systems,” said Mike
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Roman, general manager and vice president of platform providers to implement global 3G and 3M Renewable Energy Division. “Also, NREL 4G pentaband handset platforms with product has pilot plant capabilities, which allow valuable footprints that are 35 per cent smaller than application testing of 3M’s biofuel distillation today’s highest-volume quadband solutions.” technologies in a controllable and scalable environment.” He adds that, for this reason, RFMD is anticipating significant adoption of the line- Areas of investigation and testing under the up by customers in the months to come; the agreements include: company already develops components for cellular handsets and offers gallium nitride * New moisture barrier films and flexible foundry services, with facilities throughout packaging for CIGS (copper indium gallium Europe, Asia and the US. diselenide) thin film solar cells to increase module performance and reduce manufacturing Mr Creviston’s comments come as PowerSmart costs has been given an Editor’s Choice award by * New reflective coatings to protect and Embedded Computing Design Magazine. enhance the performance of lower-cost mirrors used in concentrating solar power The publication praised the range for being * New alternatives to ethanol biofuel able to reduce power consumption in multiband distillation that will reduce energy and water devices, lowering thermal dissipation and use, and increase throughput in existing corn extending battery life in order to allow the ethanol and future cellulosic ethanol production handsets to be greener. plants
iGuzzini designs OSRAM Opto Semiconductors LEDs into highly efficient Handsets ‘35% smaller’ with RFMD streetlamps PowerSmart 2010-03-31 2010-03-31
With iGuzzini’s new Archilede, designed and A 35 per cent reduction in product footprint manufactured by iGuzzini for Enel Sole, LEDs is possible with RFMD’s award-winning PowerSmart range for cellular devices. are being used on a large scale for the first time for street lighting in Italy.
RFMD is anticipating continued strong Several hundred of these innovative LED uptake of its PowerSmart range in light of the luminaires are now installed in various Italian physical size benefits that it offers to handset cities. OSRAM Opto Semiconductors’ durable manufacturers. and highly efficient LEDs with a light output of 100lm/W illuminate the northern Italian cities The radio frequency and compound of Piacenza, Lodi and Alessandria and are semiconductor technology developer created already reducing energy costs and eliminating PowerSmart to provide manufacturers with a large amounts of CO . multimode and multiband cellular air interface 2 standards solution delivered through its trademarked RF Configurable Power Core.
Eric Creviston, president of the cellular products group at RFMD, says: “PowerSmart enables smartphone manufacturers and cellular
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groups”, for example, pedestrians, cyclists or motor vehicles – and adapt lighting specifically for them.
LED as an efficient and economical alternative to conventional technologies
Compared with the sodium vapour and mercury vapour lamps widely used in street lighting, LED luminaires achieve energy savings of 40– 60 percent. Extrapolated to 1,000 lamps with 84 LED each, this equates to savings in CO2 Archilede, designed and manufactured by uptake of more than 6,600 trees compared with iGuzzini for Enel Sole, is available in three conventional sodium vapour lamps. versions: 84 LED with an output of around 100 Markus Klein, Senior Director SSL at OSRAM watts, 59 LED at 70 watts and 39 LED at 55 Opto Semiconductors, says, “Even though watts. the initial investment costs of an LED street Source: iGuzzini lighting system is higher than a conventional lighting system, over a few years time the New Archilede, iGuzzini by ENEL Sole, LED system will end up costing less due to street luminaire shine with OSRAM Opto the high efficiency, long operating life and low Semiconductors’ Golden DRAGON Plus LEDs maintenance costs of the LED system.” with a color temperature of 6,000K. The color rendering of the LEDs provides a natural color “With OSRAM Opto Semiconductors’ high- impression which can enhance safety and performance LEDs we are able to provide security. Due to their directional nature, LEDs local authorities with street luminaires that eliminate stray light and reduce overall light are attractive looking on the one hand and pollution. In additional to their high efficiency represent a sustainable solution on the other; this LED also provides long life (between as well as electricity costs they also drastically 60,000 and 100,000 hours depending on reduce CO2 emissions and maintenance operating conditions) which translates to lower requirements”, says Adolfo Guzzini, iGuzzini maintenance costs. President.
The light-emitting diodes have given iGuzzini’s The Archilede can be seen at the OSRAM designers considerable creative freedom due booth on Light+Building 2010, together with to their small dimensions. The luminaire itself LED streetlamps from Hess, Siteco and was developed specifically for street lighting Leipziger Leuchten. requirements and has its own individual, contemporary design. The Archilede has been designed for use on any type of roadway. G&P Technologies Appoints Axus Technology as North American Distributor With its intelligent control system and 2010-03-31 various programming options these LED street luminaires are capable, for example, Delivering Research CMP and Post-CMP of automatically shining more light in one Cleaning Equipment direction depending on the volume of traffic or of shining more light on a roadway crossing Axus Technology has been appointed by G&P than other areas of the road. It is also possible Technologies as the exclusive North American to customize the lighting for different “user distributor for the full range of G&P CMP and
156 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest post-CMP cleaning products. Axus Technology featuring WiSpry’s products with advanced is a US-based supplier of custom CMP tunable RF technology,” said Hideo Toda, and wafer thinning technologies, providing president of TK. “WiSpry’s product portfolio equipment and support to a wide range of and roadmap are central and are strategically production and research customers. G&P important to our mobile business segment and Technologies manufactures CMP and post- we plan to build a solid partnership with them.” CMP cleaning tools specifically designed for development and research applications. The “We spent a great deal of time determining G&P products are used for a wide range of what channel partner would be the best fit semiconductor and related CMP and cleaning for WiSpry,” said Lew Boore, WiSpry’s vice applications and are used for all wafers sizes; president of Marketing & Sales. “TK’s unique ranging from small diameter wafers through combination of market knowledge, customer 300mm diameter applications. G&P tools are focus and technical know-how makes them a engineered with a streamlined user interface vital partner for us in Japan. They are key in and compact footprint, delivering high reliability providing our customers with the local technical along with the process flexibility users require. and logistical support they require.” Source: WiSpry, Inc. “This is an important development for our North American customers,” stated Dr. Haedo Jeong, President of G&P. “With an increasing number of installations in the region, engaging KLA-Tencor Announces Adoption of Its Axus Technology as a distribution partner will Candela CS20 Platform by Leading Korean improve the direct service and applications LED Device Maker 2010-03-31 support for our North American customers.”
LED Manufacturer to Optimize Epi Productivity Through Improved Process Control WiSpry Signs Takachiho Koheki Co., Ltd. as its Technical Distributor for Japan Today, KLA-Tencor Corporation, the world’s 2010-03-31 leading supplier of process control and yield management solutions for the semiconductor WiSpry, Inc., the leader in tunable radio and related industries, announced that Korean frequency (RF) semiconductor products for company, Seoul Optodevice Company, Ltd., the wireless industry, today announced the has become the latest Light-emitting Diode addition of Takachiho Koheki Co., Ltd. (TK) as (LED) device maker to adopt KLA-Tencor’s its technical distributor for Japan. Candela CS20 platform. This significant sale marks the growing importance of defect TK is one of Japan’s leading distributors inspection for the Metal Organic Chemical of electronics components to consumer Vapor Deposition (MOCVD) process, and electronics manufacturers and mobile phone reinforces KLA-Tencor’s continued focus on makers. With over 50 years of experience in LED inspection. bringing Western technology to the Japanese market, TK gives companies the vital support Defects from epi and substrate processes necessary to make their products a success. can impact yield and field reliability. Critical epi defects include: pits, cracks, topographic “We will be able to provide important Japanese anomalies, and surface non-uniformity, while customers, such as mobile phone makers and substrate defects can include: particles, module makers of wireless communications, scratches and stains. KLA-Tencor’s Candela greater value by offering new solutions CS20 system is uniquely designed for the
April/May 2010 www.compoundsemiconductor.net 157 news digest ♦ compound semiconductor inspection of transparent materials--gallium Cary Eskow, director of LightSpeed - Avnet nitride and sapphire--with simultaneous Electronics Marketing’s solid-state lighting detection of surface reflectivity, topography, and LED unit - said in an interview with the scatter and phase signatures. This automated EFY Times that the introduction of low-cost inspection system, with real-time classification, production processes due to a growing demand provides actionable data for effective process for these products will make LEDs more control. economically viable for manufacturers and consumers in the long run. Commenting on the tool capability, Seoul Optodevice stated, “Inspection results from the She stated: “Energy costs are at a premium, Candela CS20 will enable us to optimize epi this will only worsen, thus promoting low-energy processes and improve productivity. Adoption lighting. Ecological concerns are becoming of this advanced process control strategy will more important and the fact that LEDs - unlike enhance the value to our customers through tubelights - have no mercury is the key.” improved product quality and consistent performance. These benefits align directly with Digitimes also recently reported the LED our goal to maintain leadership in this rapidly market is set to flourish in Taiwan in the months emerging market.” ahead, with Philips Taiwan general manager Edward Po claiming his company looks set to Jeff Donnelly, group vice president of the quadruple its sales of LEDs during 2010. Growth and Emerging Markets division of KLA- Tencor, stated, “LED market growth is slated to be greater than 35 percent year-over-year. We Graphene optical link unveiled by IBM are making significant investments in products 2010-03-30 that specifically address LED manufacturing needs. This investment, combined with our IBM has showcased a new graphene optical extensive experience in process control link photodetector. solutions, enables us to bring superior products to market rapidly to address the industry’s cost A new graphene optical link capable of and technology roadmaps.” transferring 10 Gb per second has been showcased by IBM. The Candela CS20 is currently installed in multiple fabs around the world. For more The device utilises a graphene photodetector information about KLA-Tencor’s LED offerings, fabricated on a silicon-on-insulator (SOI) please visit www.kla-tencor.com. substrate and achieved 6.1 milliamps per watt at the communications wavelength of 1.55 microns during a demonstration in Portland, Oregon. Economy of scale ‘to drive down LED prices’ IBM has broken with convention in creating a 2010-03-30 graphene photodetector which operates on an SOI substrate, as traditional photodetectors LED development in India is likely to push use III-V compound semiconductors such as down the cost of production and purchase. gallium nitride.
Light-emitting diodes (LEDs) will likely become However, the company stated it hopes that this cheaper in India over the coming months due innovation will usher in a new age of photonic to an economy of scale as more items are circuitry. produced, it has been claimed.
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“A key advantage of graphene lies in the very people from 80 nations to carry out projects in high speeds in which electrons propagate, a range of scientific fields. However, its main which is essential for achieving high-speed, areas of expertise are in engineering sciences high-performance next-generation transistors,” and architecture, system-oriented sciences, said Dr TC Chen, vice-president of science and mathematics and natural sciences. technology at IBM Research.
IBM presently employs approximately 20,000 WITec Introduces Line Extension of its people in the UK and reported global revenues Microscope Series of $95.8 billion (£63.4 billion) in 2009. 2010-03-30 Furthermore, the company controls total assets valued in excess of $109 billion. WITec introduces a line extension of the alpha300 microscope series. Building on the system’s inherent modularity, WITec has added Microcavity lasers ‘first of their kind’ several new microscope versions in order to 2010-03-30 meet all the diverse and multi-faceted customer requirements one may encounter. In the field A team from Switzerland have developed a of Raman Microscopy the new baseline is the laser that is smaller than the beam of energy it micro Raman system alpha300 M for single emits. point spectrum acquisitions and depth profiling. The alpha300 M+ is additionally equipped with Researchers at ETH Zurich in Switzerland have a stepper motor and allows Raman mapping developed possibly the world’s smallest laser experiments and large area investigations. system. The stepper motor can also be attached to the Raman Imaging system alpha300 R, providing The microcavity laser is just 30 nm but is an extremely flexible and powerful research capable of emitting at up to 200 nm and, as tool (alpha300R+) for automated large area such, is the first laser to feature an electron and high-resolution 3D chemical imaging. cavity smaller than the beam it emits. The alpha300 ML features cost-effective high-resolution confocal Raman mapping for Optics.org reported the team behind the the highest spectral flexibility (UV-VIS-NIR). technology feel it has applications in a range of Upgrades and combinations with Atomic Force areas, including quantum optics studies and in or Scanning Near-field Optical Microscopy are radio astronomy. possible at any time.
“It can be made extremely small compared A scientific-grade research optical microscope with the emitted wavelength and has a very is the foundation of WITec’s modular and flexible cavity design. We could scale the size flexible microscope series. Only highly precise of the cavity down even further,” commented and optimized components are used in order to Jerome Faist from ETH’s Institute for Quantum achieve the various capabilities of the different Electronics. microscope models resulting in a highly sensitive setup. This sensitivity can enable The breakthrough came when the researchers a reduction in acquisition times of a single replaced the traditional Fabry-Perot resonators Raman spectrum to below one millisecond. in the optical cavity with an electron resonator, When performing measurements on delicate enabling electronic feedback. and precious samples this can lower required levels of excitation power or allow weak Raman ETH Zurich is a research university that scatterers to be analyzed. presently enables approximately 20,000
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About WITec can be a limiting factor in mobile handset WITec is a manufacturer of high performance designs, there is an increasing demand optical and scanning probe microscopy for smaller camera modules that can still systems. A modular product line allows the address the call for higher resolution and cost combination of different microscopy techniques effectiveness. This has shifted manufacturing such as Raman, SNOM or AFM in a single of both the CMOS image sensor and the instrument for flexible analysis of the optical, micro-optics stack to the wafer level, which chemical and structural properties of a sample. in turn has created new manufacturing The instruments are distributed worldwide and challenges. Manufacturing these devices at are used primarily in the fields of Materials the wafer level requires precision alignment Science, Life Science and Nanotechnology. and effective bonding in multiple layers of the WITec is based in Ulm, Germany and Maryville, optical stack in order to reach maximum device TN, USA. For more information, please visit performance. Known for its ability to align http://www.witec.de. wafers with extremely high accuracy, EVG’s IQ Aligner is the only industry-proven, high-volume manufacturing solution for wafer lens molding and stacking available today. Wafer-Level Camera Manufacturer, Nemotek Technologie, Selects EV Group Wafer “Demand continues to rise for wafer-level Bonding and UV Nanoimprint Lithography cameras, and we are ramping up our Systems for Capacity Ramp production capabilities in order to meet our 2010-03-30 customers’ needs,” said Jacky Perdrigeat, chief executive officer of Nemotek Technologie. “To Follow-on Order Demonstrates the Strength of support our production expansion efforts, we EVG’s High-volume Manufacturing Solutions selected EV Group’s wafer bonding and UV- for Wafer-level Camera Applications NIL systems not only for their high-volume capabilities, but also for their support of our EV Group, supplier of wafer bonding and preferred wafer-level technology process. The lithography equipment for the MEMS, quality of the technical results and the nanotechnology and semiconductor markets, repeatability that we have witnessed in using today announced that Morocco-based the existing EVG systems in our state-of-the- wafer-level camera manufacturer Nemotek art cleanroom also weighed heavily in our Technologie has placed a repeat order for selection process.” EVG’s bonding and UV nanoimprint lithography Paul Lindner, executive technology director (UV-NIL) systems – the EVG520IS and IQ of EV Group, noted, “This opportunity to Aligner. Nemotek will use these systems to further support Nemotek’s capacity needs is address its production demands for CMOS testament to the strength of our wafer-level image sensors and wafer-level optics that will solutions portfolio, which features field-proven, be deployed in wafer-level cameras for mobile high-volume capabilities. It also validates our applications. success in parlaying our long-time expertise in the manufacture of CMOS image sensors to This order marks a significant win for EVG as handle the shift to wafer-level production for the it paves the way for a long-term partnership overall optics market. We value the confidence with Nemotek – and further bolsters EVG’s Nemotek has placed in our wafer bonding, dominant position as the preferred bonding UV-NIL lens molding and aligned UV bonding and UV-NIL equipment provider for wafer-level technologies for their wafer-level camera camera applications. applications, and look forward to opportunities As the size of the camera in mobile phones to not only expand our relationship, but also
160 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest forge collaborative ties in support of Nemotek’s equipment, as well as photoresist coaters, growth.” The EVG systems augment Nemotek’s cleaners and inspection systems. In addition class 10 cleanroom, which already houses to its dominant share of the market for wafer several EVG tools, including an EVG6200 bonders, EVG holds a leading position in NIL bond aligner, a fully automated IQ Aligner and lithography for advanced packaging and UV-NIL system, an EVG520IS wafer bonder, MEMS. Along these lines, the company co- and an EVG40NT metrology system. The founded the EMC-3D consortium in 2006 to two new tools will be installed in phases with create and help drive implementation of a cost- the two-bond chamber EVG520IS for CMOS effective through-silicon via (TSV) process for image sensor manufacturing, to be completed major ICs and MEMS/sensors. Other target this month. The second IQ Aligner UV-NIL semiconductor-related markets include silicon- system for micro-lens molding, bond alignment on-insulator (SOI), compound semiconductor and UV bonding of micro-optics stacks will and silicon-based power-device solutions. be installed later this year. The wafer-level Founded in 1980, EVG is headquartered in camera equipment market represents another St. Florian, Austria, and operates via a global high-growth segment in which EVG has customer support network, with subsidiaries successfully established its technology process in Tempe, Ariz.; Albany, N.Y.; Yokohama and and expertise. Its dominant position in this Fukuoka, Japan; Seoul, Korea and Chung- market contributed to EVG’s financial success Li, Taiwan. The company’s unique Triple in 2009, when the company continued to see i-approach (invent - innovate - implement) is an increase in both order intake and revenue supported by a vertical integration, allowing despite the global economic recession. EVG to respond quickly to new technology developments, apply the technology to About Nemotek Technologie Nemotek manufacturing challenges and expedite Technologie manufactures customized Wafer- device manufacturing in high volume. More Level Cameras for portable applications. The information is available at www.EVGroup.com. company provides customers with design and manufacturing services for Wafer-Level Packaging, Wafer-Level Optics and Wafer- Level Cameras. Established in May 2008, Purdue University to receive AIXTRON Nemotek Technologie is funded by Caisse de Black Magic tool for carbon nanomaterials 2010-03-30 Depot et de Gestion (CDG). The company features a world-class manufacturing and clean AIXTRON AG today announced an order room facility located in the Rabat Technology for one Black Magic deposition system from Park, a hub for technology development based Purdue University’s Birck Nanotechnology in Morocco. For more information, visit: http:// Center in West Lafayette, IN, USA. www.nemotektechnologies.com/
About EV Group EV Group (EVG) is a world The order is for a 2 inch wafer configuration leader in wafer-processing solutions for system for the deposition of carbon semiconductor, MEMS and nanotechnology nanomaterials and high-k oxides by atomic applications. Through close collaboration layer deposition (ALD). The order was received with its global customers, the company in the fourth quarter of 2009 and the system will implements its flexible manufacturing be delivered in the second quarter of 2010. model to develop reliable, high-quality, low- cost-of-ownership systems that are easily While acknowledging the Army Research integrated into customers’ fab lines. Key Office for the support of this project through products include wafer bonding, lithography/ the US Department of Defense’s DURIP nanoimprint lithography (NIL) and metrology program, Associate Professor Peide Ye of
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Purdue University comments, “The Black Magic EDWARDS ANNOUNCES ORDERS FROM CVD/PECVD platform is vital to our ongoing FLAT PANEL DISPLAY MANUFACTURERS advanced CMOS device characterization IN CHINA research projects. This first-of-a-kind dual- 2010-03-30 configuration CVD system will allow us to not only to carry out CNT and graphene deposition Dry and turbomolecular pumps purchased but also to prepare high-k oxides by ALD in- will support advanced FPD manufacturing situ. Having this unique capability at Birck processes means that we will be able to optimise carbon/ oxide-based materials for the next-generation Edwards Limited, a leading global supplier device channels. The advantage of preparing of vacuum and abatement equipment and the oxide in-situ directly after channel growth services, today announced the sale of is that it potentially eliminates contamination multiple dry pumps and turbomolecular (TMP) and trapped charge, leading to cleaner vacuum pumps to two flat panel display (FPD) channel/oxide interfaces and better device manufacturers in China. Total sales were in performance.” excess of US$13 million, making it one of Edwards’ largest sales to that region to date. Opened in July 2005, the $58 million, 187,000 sq. ft., Birck Nanotechnology Center includes a 25,000 sq. ft. Class 1-10-100 nanofabrication cleanroom - the Scifres Nanofabrication Laboratory. The facility has many state- of-the-art features such as special low vibration rooms for nanostructure research with precise temperature and environment control. The center also houses other laboratories for nanophotonics, crystal growth, molecular electronics, MEMS and NEMS, surface analysis, SEM/TEM and electrical characterization. In addition, it has a unique nanotechnology incubator facility for interaction and tech transfer with industry.
Dr. Rainer Beccard, Vice President Marketing “These two sales demonstrate Edwards at AIXTRON, further comments. “While continued leadership in the FPD sector where research has progressed towards achieving we have an established record of providing Moore’s Law with the possibility of introducing consistently trusted vacuum solutions along III-V materials as device channel material, the with high quality customer support. They other channel materials based on carbon are also highlight our growing presence in also now being investigated as future options. the expanding Chinese market,” said Neil AIXTRON’s 300mm-wafer scale MOCVD Lavender-Jones, president, Edwards Asia equipment has already been used at other Pacific. “The pumps will be used in a number locations for III-V channel materials. With the of FPD manufacturing processes, including unique implementation of CNT/graphene/ALD array, cell and color filter fabrication. Both sales capability at Purdue, researchers can also are a result of the outstanding collective efforts explore the challenges of integrating carbon of our local China team and global support nanomaterials in the device channel.” specialists.”
Edwards offers a comprehensive range
162 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest of modular vacuum pump and exhaust order to make them work. management systems designed to improve FPD processes, minimizing downtime and In the future, the Noida plant will also be used extending product life with lower costs of to create other electronics applications but for ownership. All products are supported by our now will focus on white LED technology, the global network of field and on-site services. firm stated.
The orders include iXH process pumps, iF De Core was founded in 2004 by entrepreneur loadlock pumps and STP TMP pumps. The Deepak Loomba. However, this new venture iXH range of dry pumps have been designed is being carried out by Loomba along with a to provide the highest reliability on demanding number of associates, including chief scientific harsh duty processes where pumps have officer Dr S K Agarwal and V M Dhingra, to withstand toxic, corrosive and powder director and chief projects officer at the firm. forming processes. iF pumps are robust, mechanical pumps used for the frequent and rapid pumpdown of very large chambers from AirWalk launches new SoC device atmosphere to vacuum. The iF range has a 2010-03-29 large, field-proven install base and continues to be a customer favourite. AirWalk has created a new SoC device to enhance RF performance management. For further information about Edwards products please visit www.edwardsvacuum.com. Radio frequency (RF) device manufacturer AirWalk Communications has announced the launch of a new system-on-a-chip (SoC) De Core to produce white LEDs in India device. 2010-03-29 The firm has been working in partnership with White LEDs are soon to be manufactured in QualComm to create an integrated SoC tool India by De Core Science and Technologies. using the Femtocell station modem, providing
automatic configuration enhancements and De Core Science and Technologies has delivering RF performance management announced plans to produce white light-emitting capabilities. diodes (LEDs) at its Noida manufacturing plant in India. It has applications in voice and data cellular
services for homes, small businesses and The company specialises in the development campus areas and aims to provide performance of optoelectronic application-specific advantages over existing SoC solutions. semiconductor devices and utilises compound semiconductors such as aluminium indium “By integrating channel modems, processors, gallium nitride to achieve this. GPS elements and beacons into one device,
the hardware needed to perform these It will become the first company in India to functions is significantly reduced,” commented develop this kind of technology, with the firm Serge Pequeux, president and chief executive also manufacturing blue laser systems for use officer of AirWalk. in Blu-Ray DVD players at the site.
AirWalk has received a number of accolades However, to make white LED technology a in recent years, including being the 2009 reality, the firm is also investing in driver IC winner of the Innovation in Wireless Enterprise manufacture at a separate plant in Gujarat, in Solutions Development prize at the 3G CDMA
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Industry Achievement Awards, as well as New multiple wavelength IR detector for being a 2009 finalist in the emerging company missile warning systems category for the Metroplex Technology 2010-03-29 Business Council. Sofradir releases Altair MWIR-MWIR, a new multiple wavelength IR detector for missile Efficient Power Conversion Corporation warning systems. Altair MWIR-MWIR provides Announces SPICE Models dual visibility in the 3 – 4 and 4 - 5 micron 2010-03-29 wavebands, bringing new detection advantages in a single piece of equipment Efficient Power Conversion Corporation (EPC) today announced that the company has made Sofradir, a developer and manufacturer of available on its web site SPICE models for all advanced infrared detectors for military, space of its enhancement mode GaN transistors. and industrial applications, announced today that it has released Altair, a new dual-band TSPICE, PSPICE, and LTSPICE device models MW-MW IR detector. Altair MWIR-MWIR have been developed to help the designer operates in two mid-wave bandwidths, 3 – 4 of advanced GaN-based power conversion micron and 4 – 5 micron, allowing users to circuits and systems understand the value of better identify objects and thereby reduce the this new power transistor family and reduce number of false threats identified. The dual- their time-to-market with benchmark products. band MW-MW IR detector also enables more These free downloads are available at: accurate temperature measurement of targets. Altair MWIR-MWIR first shipped in early http://epc-co.com/epc/ToolsandDesignSupport/ January to a European customer. Production DeviceModels.aspx ramp-up is expected in mid 2011.
EPC has also written an application note to “The quality achieved in our latest IR help users understand enhancement mode detector Altair MWIR-MWIR - that operates GaN transistor capabilities and the applicability in two different bandwidths - reinforces our of the SPICE models. This application note is position as one of the leading IR detector available at: suppliers,” says Philippe Tribolet, VP R&D and Technologies. “With this new detector, Sofradir http://epc-co.com/epc/documents/product- is providing higher quality images for users training/Circuit_Simulations_Using_SPICE.pdf of missile warning systems, an improvement which is totally in line with Sofradir’s goal of About EPC delivering state-of-the art solutions to customer requirements.” EPC is the leader in enhancement mode gallium nitride based power management The key advantage of dual-band IR detectors devices. EPC is the first to introduce is that users can choose the band most suited enhancement-mode Gallium-Nitride-on-Silicon to conditions, such as high humidity, high transistors as power MOSFET replacements temperatures etc., to detect and identify targets in applications such as servers, netbooks, and threats in the mid-wave range using a notebooks, LED lighting, cell phones, base single piece of equipment. Or, they can fuse stations, flat-panel displays, and class-D audio or compare the image of both bandwidths amplifiers with device performance many times to improve target identification, for example, greater than the best silicon power MOSFETs. as the images will be naturally registered. Visit our web site: www.epc-co.com. Naturally registered means that the two color dots that make up each pixel are able to focus
164 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest on the same location at the same time. manufacturer of high-performance analog ICs, today announced the AS8510, a high precision Sofradir will present Altair MWIR-MWIR at data acquisition front-end IC for automotive the SPIE Defense, Security and Sensing battery current, voltage, temperature sense symposium, April 5 - 9, in Orlando, Florida, applications and in general for sensor interface on booth #635. SPIE Defense, Security and applications where precise measurement of Sensing 2010 is one of the defense & security small signals close to ground is required. industry’s leading meetings for light-based and optronics applications, and brings together top The new flexible sensor interface IC offers researchers, scientists and engineers from advantages over alternative solutions, including the defense industry and academia. Programs being the first to feature a 16-bit dual-channel cover the latest enabling technologies and ADC + PGA architecture with less than one applications in infrared sensors, image LSB of offset and noise. Highly configurable, analysis, and other systems and devices. the AS8510 allows systems tailored to individual needs making it well suited for About Sofradir a wide range of present and future battery Sofradir develops and manufactures advanced management applications. The AS8510 in infrared detectors (IR) for military, space and combination with austriamicrosystems “System commercial applications. It specializes in Basis Chip” and a micro controller provides an cooled IR detectors based on a sophisticated entire battery sensor semiconductor solution high performance technology, Mercury for both High-Side or Low-Side at a price below Cadmium Telluride (MCT), and its vast product 2,8$ in volume. portfolio of scanning and staring arrays covers the entire infrared spectrum. Sofradir also offers The AS8510 data acquisition front-end QWIP detectors developed in cooperation with IC features two independent analog input Thales. channels with 16-bit ADCs, each with individually programmable sampling rates. Sofradir’s headquarters are located in Each channel has a low-drift programmable Châtenay-Malabry, near Paris, France. Its gain amplifier for handling +/- 160 mV signals manufacturing facilities and those of ULIS, or 0V to 1 V when by-passing PGA, thus its subsidiary that manufactures uncooled battery currents from the mA range to the kA IR detectors, are located in Veurey-Voroize, range can be measured from 100 µ? shunt. A near Grenoble, in France. Sofradir EC, the highly linear sigma delta architecture and wide company’s US subsidiary, operates in Fairfield, range of sampling rates allows the AS8510 to NJ. Sofradir, ULIS and Sofradir EC employ provide flexible support of EV (electric vehicle) more than 500 people. For more information, applications. The offset auto-zero feature (both visit http://www.sofradir.com channels) allows high accuracy measurements with low value shunt resistance (to 100 µ?) with negligible insertion loss. Also, various operating austriamicrosystems’ new battery modes include low power standby with current management data acquisition front-end monitoring for active wake-up. 2010-03-29 “The need for increasingly more accurate and The highly flexible multi-channel AS8510 efficient power management is being driven features unique zero offset for simultaneous by the exploding market for battery powered voltage, current and temperature measurement devices and, increasingly, electric vehicles,” in conventional, hybrid or electric vehicles. stated Manfred Brandl, Product Manager Automotive Sensor Interface and SBC ASSPs austriamicrosystems, a designer and at austriamicrosystems. He continued, “With
April/May 2010 www.compoundsemiconductor.net 165 news digest ♦ compound semiconductor the AS8510, designers have the highest An adapter board for quick start of AS8510 accuracy available and the flexibility required is available as well as an evaluation system for a wide variety of applications. In addition, by for voltage, temperature and battery adding an austriamicrosystems LIN companion current measurement at 12V plus terminal. IC and a low-cost microcontroller, automotive Contact austriamicrosystems for price. applications can realize reduced time to market For further information on the AS8510 in an evolving field at competitive price and or to request samples, please visit www. improved performance.” austriamicrosystems.com/Battery_Mgmt/ AS8510. The AS8510 operates with the current shunt sensor in a 12 V system either at About austriamicrosystems a battery’s ground terminal or at the plus terminal in conjunction with dedicated level austriamicrosystems is a leading designer shift companion IC, or it can be used as a and manufacturer of high performance analog general purpose sensor interface for precise ICs, combining more than 27 years of analog measurement of signals close to ground. Fully design capabilities and system know-how with differential inputs allow the AS8510 to capture its own state-of-the-art manufacturing and differential signals with 300 mV of common test facilities. austriamicrosystems leverages mode above ground and 160 mV below ground. its expertise in low power and high accuracy The two-channel architecture enables digital to provide industry-leading customized error correction techniques like “delta by sigma” and standard analog products. Operating division or capture of bridge current / voltages worldwide with more than 1,000 employees, with subsequent error correction in an external austriamicrosystems focuses on the areas microcontroller. In addition, the AS8510 draws of power management, sensors & sensor just 40 µA in standby mode. interfaces and mobile infotainment in its markets Communications, Industry & Medical The AS8510 high precision data acquisition and Automotive, complemented by its Full device can be configured for differential Service Foundry activities. austriamicrosystems simultaneous two-channel operation, or for is listed on the SIX Swiss Exchange in Zurich multiplexing two single-ended channels in (ticker symbol: AMS). For more information, addition to one of the differential channels for please visit www.austriamicrosystems.com sequential measurements. Furthermore to measuring voltage and current, the AS8510 also allows accurate temperature measurement CAMTEK SIGNS EXCLUSIVE DISTRIBUTION from either the internal sensor or from an RIGHTS AGREEMENT external temperature sensor, which may be 2010-03-29 powered by an on-chip 250 µA current source. The AS8510 includes an internal precision Camtek’s FALCON and Gannet Systems will be reference, integrated digital low-pass filters, on- exclusively distributed by Canon MJ in Japan chip precision oscillators and a four-wire SPI interface. Camtek Ltd. Have announced the signing of an exclusive distribution rights agreement The AS8510 is available in a SSOP20 package, with Canon Marketing Japan Inc. for sales of operates from 3.3 volts, and has an ambient Camtek’s Automatic Optical Inspection (“AOI”) operating temperature range of -40 to +125°C. systems, that address the semiconductor market in Japan. Price & Availability Samples are available. Prices on request. Canon Marketing Japan is a leading provider Technical Support of a wide variety of solutions to the Japanese
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Semiconductor industry with a very strong by applying its technologies to the industry- market position and support organization specific requirements. specializing in high end complex equipment. The Company believes its variety of Yield Enhancing solutions will fit and compliment the Spintronic breakthrough announced Canon MJ product line. 2010-03-26
“We are very pleased and proud of our A breakthrough in spintronic technology has cooperation with Canon, a world leading been achieved by Intel researchers. company in the semiconductor industry,” said Mr. Aharon Sela, President Camtek Asia. “ This Research carried out by Intel and a group strategic cooperation is the beginning of a long of other firms has resulted in the further term partnership that will enhance our current development of spintronic technology. activity in Japan and will enable us to penetrate to new market segments such as Memory The team has found a way of encoding products, LED, CIS, 3-D integration, MEMS, information regarding the spin of electrons Compound Semiconductor and automotive - either “spin up” or “spin down” - in order to IC in Japan and will allow us to provide our provide ultra-low power operation for non- advanced AOI solutions both for the front-end volatile circuits. (Gannet product line) and the back-end (Falcon product line), backed up by Canon MJ’s Indeed, the development of dilute magnetic outstanding pre- and post-sales support.” semiconductors have, until now, relied on the use of manganese-doped compound Mr.Kunio Kurihara,Director Canon Marketing semiconductors, such as indium arsenide or Japan Inc. “By concluding this distribution gallium arsenide. agreement with Camtek, Canon MJ adds to its line-up wafer inspection systems that can be Professor of engineering at the University of used in a wide range of semiconductor front- California - Los Angeles (UCLA) Kang Wang end and back-end applications. Through our said the team has achieved success on cooperation with Camtek, we will aggressively electron field-controlled ferromagnetism at 100 deploy these systems to meet the needs of degrees Kelvin and is now in the process of customers in Japan. Furthermore, based on developing applications at room temperature. Camtek’s rich installation base overseas, we have high expectations for this product line. “ A UCLA announcement recently claimed that spintronic technology will form an integral part ABOUT CAMTEK LTD. of the drive to enable the creation of smaller circuitry in the future, as it will enable scientists Camtek Ltd provides automated solutions to create semiconductors which use less power dedicated for enhancing production processes and are more energy efficient. and yield, enabling our customers new technologies in two industries; Semiconductors, Printed Circuit Board (PCB) & IC Substrates. SMI Announces Sale of NanoH+ CVD Camtek addresses the specific needs of these System for Oxides and Nitrides industries with dedicated solutions based on a 2010-03-26 wide and advanced platform of technologies Structured Materials Industries, Inc. announced including intelligent imaging, image processing, today, March 26th, 2010, the sale of a NanoH+ ion milling and digital material deposition. CV tool for deposition of oxides and nitrides. Camtek’s solutions range from micro-to-nano
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The tool, capable of depositing films on them for their valuable contributions to the 100 mm substrates is specifically designed company” to alternate between depositions of both oxides and nitride films with minimal cross Mr. Joyce and Mr. Greene were director contamination. The load locked tool features designees of Silver Lake and KKR, operation through 1200C. This system offers respectively. Silver Lake and KKR, through rapid turnaround from sample to sample their ownership of Bali Investments S.àr.l, and material to material. Dr. Gary S. Tompa, Avago’s principal and controlling shareholder, company president said “SMI has had a beneficially own approximately 54% of Avago’s surge of NanoH and NanoH+ CVD™ tool outstanding ordinary shares. Pursuant to sales as we have focused on providing the terms of Avago’s Second Amended and customized solutions for researcher flexibility, Restated Shareholder Agreement, Silver upgradeability, value pricing, experimental Lake and KKR are each currently entitled results, customer achievements, and other to designate three members to the Board. benefits.” SMI’s line of NanoH CVD™ span However, for the time being, neither Silver several sizes, multiple material systems, Lake nor KKR is designating another director plasma enhancement options, and so on; to the Board to replace their resigning director including the option to operate in both CVD and designee. In light of the Company’s transition ALD modes. to being a public company and the completion of its recent secondary offering, KKR and Silver Lake believe it is an appropriate time Avago Technologies Announces Changes to to decrease their presence on the Board and Board of Directors allow independent directors to comprise a 2010-03-26 greater proportion of the Board.
Avago Technologies Limited, announced that “John and Jamie have served Avago well John R. Joyce and James H. Greene, Jr. have as directors over the last four years, and I resigned from its board of directors, effective thank them for their valuable contributions to today. the company,” said Hock Tan, President and Chief Executive Officer of Avago. “Given our Avago Technologies Limited (Nasdaq:AVGO), a transition to being a public company, it was leading designer, developer and global supplier appropriate to reconsider the composition of of a broad range of analog semiconductor Avago’s Board.” devices with a focus on III-V based products, announced that John R. Joyce and James H. Greene, Jr. have resigned from its board Vishay Releases New Integrated Power of directors (the “Board”), effective today. In Phototriacs connection with their resignations from the 2010-03-26 Board, Messrs. Joyce and Greene have each withdrawn as candidates for re-election at Vishay Releases New Integrated Power Avago’s upcoming Annual General Meeting Phototriacs in DIP-8 Package With Output of Shareholders, scheduled to take place on Current up to 1 A March 31, 2010. The Board has decided not to fill the vacancies created by their resignations Space-Saving Devices Eliminate Need for and no other nominees for election will be Separate Power TRIACs named in either of their places. Vishay Intertechnology, Inc is broadening its “John and Jamie have served Avago well as optoelectronics portfolio with the introduction of directors over the last four years, and I thank two integrated power phototriacs: the VO2223,
168 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest which features an output current of 0.9 A, inductors, sensors, and transducers). These and the VO2223A, which features an output components are used in virtually all types current of 1.0 A. These new power phototriacs of electronic devices and equipment, in the integrate functions formerly performed by two industrial, computing, automotive, consumer, discrete devices, a phototriac and a power telecommunications, military, aerospace, and TRIAC. By eliminating the need for an external medical markets. Its product innovations, power TRIAC, the devices save board space successful acquisition strategy, and “one-stop and reduce costs. Packaged in the 8-pin DIP, shop” service have made Vishay a global the optocouplers protect people against electric industry leader. Vishay can be found on the shock and low-voltage control circuitry against Internet at http://www.vishay.com. overload conditions by optically isolating high- voltage power supplies in home appliances and Link to datasheets: many other systems. http://www.vishay.com/doc?81166 (VO2223) Rated at a 600-V blocking voltage, the VO2223 and VO2223A provide isolation between DC http://www.vishay.com/doc?81924 (VO2223A) and AC voltages on 120-V and 240-V AC lines and offer an input-to-output isolation voltage of 5300 V, which is 32 % higher than the closest competing device. 5N Plus promotes Nicholas Audet to Vice President announces end of partnership Power phototriacs are commonly used in with Amerigon home appliances like air conditioners and 2010-03-26 refrigerators, which feature a control panel the consumer uses to set temperature. While 5N Plus Inc. (TSX:VNP), a leading producer such control panels are typically powered by and provider of high-purity metals and voltages of less than 5 V DC, the blower motors compounds for electronic applications, to which they are linked are typically powered announced today that it has promoted Nicholas by a high-voltage AC source. The power Audet to Vice President phototriac performs two functions: switching on the power to the blower and isolating the With operational and commercial responsibility control panel from high voltage spikes and for all of 5N Plus’ activities, excluding those noise from the motor. A 10-mA input trigger of its subsidiary Firebird Technologies. 5N current from a microcontroller turns on the Plus also announced that it has sold its entire power phototriac which in turn provides power interest in ZT Plus, which had been headed by to the motor. Mr. Audet, to its partner in this venture BSST LLC, a subsidiary of Amerigon Incorporated. Samples and production quantities of the new Financial terms of the transaction are not being VO2223 and VO2223A power phototriacs are disclosed. available now, with lead times of eight weeks for large orders. Follow Vishay optocouplers at 5N Plus President and Chief Executive Officer http://twitter.com/VishayPowerMgmt. Jacques L’Écuyer said, “We are pleased to promote Nicholas Audet and provide him Vishay Intertechnology, Inc., a Fortune 1,000 with additional responsibilities and the ability Company listed on the NYSE (VSH), is one of to further contribute to the growth of our the world’s largest manufacturers of discrete corporation. Nicholas has been instrumental semiconductors (diodes, rectifiers, MOSFETs, in our success through his leadership of our optoelectronics, and selected ICs) and passive R&D activities, which included the development electronic components (resistors, capacitors, of our cadmium telluride technology. More
April/May 2010 www.compoundsemiconductor.net 169 news digest ♦ compound semiconductor recently Nicholas was acting as managing a practical solid state lighting source for the director of our joint venture ZT Plus. Q-Spot but its big-chip footprint eliminates the Unfortunately the commercial progress of ZT need for CHAUVET to use LED arrays in future Plus was slower to develop than anticipated. In designs.” addition, there were differences over the future business strategy between the two partners The Q-Spot 260-LED light comes equipped with that could not be reconciled. Accordingly, it one CST-90 white PhlatLight LED, capable of was mutually agreed that 5N Plus would sell reliably delivering 3,500 lumens, without costly its entire interest in the venture, which we have lamp changes or high energy consumption. done today.” It is designed for small to medium-sized installations as well as mobile applications. About 5N Plus Inc. The Q-Spot 260-LED weighs 29 pounds and is ideal for areas where temperature control is a 5N Plus draws its name from the purity of its concern. products, 99.999% (five nines or 5N) and more. “Big-chip PhlatLight LEDs enable CHAUVET to 5N Plus, which has its head office in Montreal, manufacture lighting fixtures that are smaller, Québec, develops and produces high- lightweight and obviously brighter with a more purity metals and compounds for electronic pure, flat light ideally suited for nightclubs applications and provides its customers and mobile environments where temperature with recycling solutions. The Company is an control is essential,” said Mike Graham, product integrated producer with both primary and manager, CHAUVET. “What sets a single, secondary refining capabilities. 5N Plus focuses CST-90 LED apart in the industry is that it on specialty metals such as tellurium, cadmium gives us the ability to fully take advantage of and selenium and on related compounds such environmental and electrical advantages of as cadmium telluride and cadmium sulphide. solid-state lighting technology similar to current The Company’s products are critical precursors high-output fixtures on the market, saving our in a number of electronic applications, customers money.” including the rapidly-expanding solar (thin-film photovoltaic) market, for which 5N Plus is a Designed to provide an ultra-bright, reliable major supplier of cadmium telluride, and the light source, PhlatLight LEDs are currently radiation detector and thermoelectric markets. used by some of the world’s largest companies, including Acer, LG, Philips Vari*Lite, Sony, Samsung and Toshiba. Luminus Devices White PhlatLight LEDs Powers New Entertainment Light 2010-03-26 Mitsubishi Electric Develops Dual-rate
Burst-mode Optical Transceiver for Luminus Devices White PhlatLight LEDs 10G-EPON Systems Powers New Entertainment Light from 2010-03-26 CHAUVET
World’s first transceiver for GE-PON and “The real value of big-chip PhlatLight LEDs 10G-EPON is that they enable the design of much more efficient optical systems for controlled-beam Mitsubishi Electric Corporation (TOKYO: 6503) applications such as the Q-Spot imaging gobo announced today it has developed the world’s spotlight resulting in more light in the beam first dual-rate burst-mode optical transceiver and reduced overall power consumption,” said that enables the coexistence of GE-PON Don McDaniel, director, global entertainment, and 10G-EPON, which is used in optical line Luminus Devices. “The CST-90 is not only
170 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest terminals. This announcement will also be PON s Mitsubishi Electric has developed made today at OFC/NFOEC2010 (Optical Fiber key devices for dual-rate burst-mode optical Communication Conference and the National transceiver to enable thecoexistence of GE- Fiber Optic Engineers Conference) held in San PON with 10G-EPON. The key devices achieve Diego, USA. the world’s highest receiver sensitivity.
The transceiver will be integral to cost- (1) Chip set for dual-rate burst-mode receiving effectively installing 10G-EPON systems on circuit Burst-mode preamplifier IC and limiting existing fiber plant networks. This will enable amplifier IC are developed, which can switch the optical access system to provide a faster, their gain and bandwidth optimized for 10Gbps more economic connection by using existing and 1Gbps receiver less than 800ns optical fiber networks effectively. (2) 82.5GS/s sampling CDR (Clock and Data Part of this work was supported by the National Recovery) for dual-rate operation Burst-mode Institute of Information and Communications CDR consists of 82.5GS/s sampling IC, the Technology. world’s fastest sampling speed, and a dual-rate data selector logical circuit Background 2) Optical performances complying with In the current, FTTH optical access system, the the strictest standards IEEE802.3av PR30 1Gbps GE-PON is being extensively utilized. standards Mitsubishi Electric developed optical But with the recent growth of internet traffic, an devices (EML, DFB, APD-preamplifier) and optical access system of 10G-EPON that can a triplexer optical module, which fully meet transmit data 10 times faster is expected to the IEEE802.3av PR30 standards. They are provide users with a more comfortable online integrated into a XFP-E-sized 2R transceiver. environment, such as easier high-definition Their excellent transmission performance video delivery and bulk file transfers. enables a loss budget of 29dB, the split ratio of 32 and a maximum transmission distance When the 10G-EPON system is introduced, to of SMF 20km, effectively utilizing existing fiber reduce costs for laying fibers and equipment, plant networks for coexistent GE-PON and both the GE-PON and 10G-EPON systems 10G-EPON systems. are required to be installed in the same fiber. To downstream from an Optical Line Terminal Patents (OLT) to an Optical Network Unit (ONU) a The technologies announced in this press mixed installation using multiplewavelength release encompass 25 Japanese and 9 systems that multiplex 1Gbps signals and international patents pending. 10Gbps signals in different wavelengths is required. To upstream from ONU to OLT, a mixed installation using time-division JDSU develops tunable XFP innovations multiplexing systems that multiplex them in 2010-03-25 the same wavelength is required. The biggest challenge is the development of a 10G/1G A range of new XFP products have been Dual-rate Burst 3R Transceiver for 10G-EPON released by JDSU. corresponding to those systems. Optical and communications technology Main Developments developer JDSU has announced the development of three new tunable XFP 1) Dual-rate burst-mode 3R transceiver transceiver products. enabling co-existing of 10G-EPON and GE-
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The products include a linear tunable XFP+ manufacturing investments in the agile photonic transceiver to provide extended reach of up layer technologies are driving next-generation to 200 km and enhanced tolerance to fibre networks and require more advanced and impairments, an enhanced tunable XFP sensitive photonic test capabilities.” transceiver to provide increased power for metro and regional applications, as well as its He added that there is a growing need to zero chirp tunable XFP transceiver suitable for provide cost-effective network capacity long-haul applications. increases and these products will go some way towards achieving this goal. Craig Iwata, senior director of marketing at JDSU, commented: “We’ve collaborated with JDSU is based in Milpitas, California and our customers on a mix of new products that works to deliver products aimed at the optical will help them get the most agility out of every communications, communications testing and network node in the most cost-efficient way measurement, commercial laser and advanced possible.” optical technology sectors.
JDSU is presently listed on the US Nasdaq stock market and has a share price of $11.4916 Longer Life and Higher Light Intensity of (£7.728 - March 25th, 14:35 GMT). PLCC 4 Package – Power DomiLED 2010-03-25 In trading so far today, the company has seen its share price rise by $0.3016 or 2.7 per cent. DOMINANT introduces new high intensity InGan devices, DWx-LJG of its Power DomiLED series, alternative to the existing JDSU launches new MAP products DWx-YJG device and completing their product 2010-03-25 portfolio of medium power LEDs.
A range of new MAP-200 products have been With an operating current of only 30mA, this released by JDSU. LED features a luminous intensity of 1800mcd (typical) for true green and 560mcd (typical) for Optical product developer JDSU has blue. announced the release of four new modules for its MAP-200 optical test and measurement platform.
The products are a new MAP insertion/return loss meter, MAP high-performance optical power meter, 100GE/40GE MAP utility and a MAP tunable distributed Bragg reflector laser.
Each has applications for the firm’s MAP-200 platform and have been designed to improve network system development and deliver a broad base of tools for the stringent testing of applications found in both laboratory and manufacturing environments.
Gegs Jones, JDSU product line manager, commented: “Continued R&D and
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The new InGaN Power DomiLED provides producer of thin-film photovoltaic modules. Prior an outstanding long product lifetime due to to First Solar, Mr. Poirier was with Honeywell its silicone encapsulation and low thermal International, where he held several leadership resistance of the housing, turning it into the positions including most recently, vice president most durable product in PLCC-4 package. In of global marketing for the Honeywell Security terms of design and dimensions, the package Group, a 3B division, and director of worldwide is the same as their other Power DomiLEDs marketing for Honeywell Turbo Technologies, a (4.2(L) x 1.2 (W) x 1.3(H) mm). high growth company within Honeywell. Prior to Honeywell International, Mr. Poirier served as This new devices perfect fit for various sales leader at SMB, a subsidiary of the Dehon illumination applications where space is Group in Europe, a leading conditioner and limited such as channel lighting and signage. distributor of specialty chemicals. It also fulfills the stringent requirements of the automotive industry. “Jean-Noel’s experience in product Engineering samples are available by March development, sales and marketing coupled 2010 whereas mass-production starts by end of with his understanding of the global solar June 2010. industry will be incredibly valuable to the future growth and success of Global Solar,” said, Dr. Jeffrey Britt, president and CEO of Global Solar Energy. “We look forward to start Jean- Global Solar Energy Expands Management Noel’s contributions to direct our marketing and Team development efforts. His leadership at Global 2010-03-25 Solar is integral to ensuring we continue being
a technology innovator in the emerging building Experienced Executive to Spearhead Product integrated photovoltaic (BIPV) industry.” Strategy and Market Growth for Thin Film CIGS
Leader; Jean-Noel Poirier Appointed Vice Mr. Poirier is also a founder of the advisory President of Marketing, Business Development firm, NextRound Venture Partners LLC., and and Tim Teich appointed Vice President of continues to advise early stage companies Operations including MachFlow Energy Inc., ElectroMotive
LLC., the Triana Group, and sits on the Global Solar Energy, Inc., manufacturer of high- advisory board of the Executive Program of efficiency Copper Indium Gallium diSelenide the New York City Accelerator for a Clean and (CIGS) solar material and the only company Renewable Economy at Polytechnic Institute in large scale production of CIGS on a flexible of New York University. Mr. Poirier holds an substrate, today announced Jean-Noel MBA from the Kellogg graduate School of Poirier as the company’s new vice president Management, Northwestern University, as well of marketing and business development. as a B.S. in Applied Economics and a B.S. in Mr. Poirier will lead Global Solar’s sales, Management Sciences from the University of marketing, business development and product Paris Dauphine. management efforts, to support the successful execution of the company’s technology “Global Solar Energy has made tremendous roadmap and corporate strategy. strides for CIGS, establishing the solar
technology as one of the most efficient and Mr. Poirier replaces Timothy Teich, who was viable PV options in the industry,” said Poirier. appointed the new vice president of operations “One of the most interesting areas of solar is earlier this year. Prior to joining Global Solar BIPV, a breakthrough approach to integrating Energy, Mr. Poirier served as vice president solar material into building products and design, of market development at First Solar Inc., a and an area where Global Solar’s CIGS flexible
April/May 2010 www.compoundsemiconductor.net 173 news digest ♦ compound semiconductor cells are uniquely suited to succeed. This is a eliminate the need for corrective optics, while truly exciting time to join Global Solar and the low threshold currents enable high-density company’s seasoned, passionate team, as they arrays. are poised for dramatic growth in the coming years.” In addition, the devices have a lower temperature sensitivity than edge-emitting laser Mr. Poirier’s appointment to Global Solar, and diodes and provide high transmission speed Mr. Teich’s new role on the executive team, coupled with low power consumption. come at the heels of important technology milestones for the company. Last month, Global Solar Energy recently became the first Transition metals ‘boost PV conversion’ manufacturer to exceed 13 percent module 2010-03-24 efficiency of a thin film on a flexible substrate. This benchmark underscores Global Solar’s Solar panels could benefit from the introduction technical achievements as well as advances of transition metals to help increase the the CIGS sector. bandgap to allow the cells to convert more wavelengths of energy.
VCSELs ‘must get more powerful’ Research carried out in Japan has revealed 2010-03-24 that the addition of transition metals to photovoltaic (PV) cells which utilise gallium VCSEL technology must improve in order to nitride (GaN) compound semiconductors can further development in the data communication help to boost conversion rates. sector. The study by Saki Sonoda, associate professor Vertical-cavity surface-emitting lasers at the Kyoto Institute of Technology, revealed (VCSELs) are presently only commercially the introduction of manganese, scandium, viable at ten to 20 Gb per second (Gbps), but in titanium, vanadium and a host of other metals the future this will not be sufficient, it has been allowed the cell to convert not just visible light claimed. wavelengths, but also those in the infra red and ultravoilet ranges. According to SPIE, high-speed laser advances In particular, the team has developed a p-type will be required to increase development of GaN PV cell using cobalt, which is capable of high-capacity, short-reach data communication. providing two volts of electricity in a one-sun environment. Indeed, at present the industry is working on the creation of VCSEL devices capable of 40 Transition metals are noteworthy elements as Gbps transfer rates, but in order to achieve this they are capable of moving electrons between photon density is being scaled down, resulting the energy shells of each atom. Properties of in a loss in reliability. the group include malleability and being ductile, as well as offering excellent heat and electrical Alternatively, scientists are experimenting conductivity. with increasing the speed of 850nm gallium arsenide-based VCSELs, although this can In addition, the only three elements which suffer from high electrical resistance, meaning create a magnetic field - iron, cobalt and nickel energy efficiency can suffer. - are all transition metals.
The key features of VCSELs include how circular and low divergence output beams
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More than 1m 2G Transmit Module market ZigBee front-end modules for smart grid shipments for RFMD applications. 2010-03-24 The product has been designed to enable users RFMD has announced one of its products has to have greater control over energy use and is seen more than one million shipments in less a global wireless networking tool for monitoring than a year. and control in a variety of applications.
Radio frequency and compound semiconductor Bob Van Buskirk, president of RFMD’s multi- product developer RF Micros Devices (RFMD) market products group, said: “RFMD and has announced the firm has surpassed the one Ember are leveraging each other’s expertise million unit mark in cumulative shipments of its to deliver high-performance, highly integrated RF71xx family of 2G dual-band and quad-band ZigBee solutions that reduce design cycle transmit modules. times, lower costs and accelerate time-to- market.” The product was launched less than a year ago and the pin-to-pin compatible devices have He added that large-scale smart energy therefore become one of the company’s most projects are likely to grow rapidly over the successful offerings in a very short space of coming months and ZigBee will capitalise on time. this trend.
“RFMD continues to develop new product RFMD was founded in 1991 and currently derivatives of the RF71xx family and we expect employs in excess of 3,700 members of staff. ongoing design-win activity and market share Last year, the firm reported annual revenues of gains in emerging markets across handset $886.5 million (£594.6 million) and controlled manufacturers and global platform providers,” total assets of $1.08 billion. commented Eric Creviston, president of RFMD’s cellular products group. It is presently listed on the US Nasdaq stock market and has a share price of $5.16 (March The firm’s headquarters are situated in 24th, 13:41 GMT). Greensboro, North Carolina, but the firm operates facilities across the US, Europe and Asia. DOW POWERHOUSE Solar Shingle Wins It provides a range of services, including GLOBE Award wireless products, broadband components, 2010-03-24 gallium nitride foundry services, as well as cellular handsets and mobile devices. The Dow Chemical Company today announced that its new DOW POWERHOUSE Solar Shingle received a GLOBE Foundation award RFMD announces ZigBee collaboration for “Environmental Excellence in Emerging 2010-03-24 Technology.”
Compound semiconductor and radio frequency The GLOBE Awards are presented annually to technology developer RFMD has announced its extraordinary companies and industry groups new ZigBee product. who have managed to balance competitive business strategies and sustainable RF Micro Devices (RFMD) has announced a development. The award was presented on collaboration with Ember to introduce to the March 23rd in Vancouver, Canada, on the
April/May 2010 www.compoundsemiconductor.net 175 news digest ♦ compound semiconductor eve of GLOBE 2010, the largest and longest- Control Over Solar Panel Manufacturing running international conference and tradeshow Process dedicated to the business of the environment. GE Intelligent Platforms today announced that Dow is bringing the power of chemistry to the HelioVolt has implemented the Proficy Software GLOBE 2010 conference and showcasing suite in its new thin film solar PV module its suite of smart solutions, new innovations, manufacturing plant. The company, based in operational best practices, partnerships and Austin, Texas, chose GE’s software to increase expertise. Dow’s solutions for today and plant yield and throughput, while meeting innovations for tomorrow include technologies strict control and traceability requirements. and advanced materials aimed at solving some With the solution, HelioVolt will be able to of the world’s most pressing challenges, from achieve a rapid return on its investment and energy and climate change to water, food, gain immediate visibility into its manufacturing health, housing and infrastructure. processes.
HelioVolt is producing thin film solar PV About POWERHOUSE Solar Shingles modules for commercial rooftop, utility-scale ground mount, residential, BIPV and custom Unveiled in 2009, the DOW(TM) installations. It is the first thin-film company POWERHOUSE(TM) Solar Shingle installs combining high-efficiency products with low- and performs like a standard asphalt shingle cost manufacturing capabilities to create a while harnessing the power of the sun to offset new generation of Copper Indium Gallium a portion of a home’s energy usage. Dow’s Selenide (CIGS) based solar modules. Thin Solar Solutions (DSS) technology uses a film technologies reduce the amount (or mass) cost-effective and durable PV material called of light absorbing material required to create a CIGS (Copper Indium Gallium diSelenide). solar cell. This can lead to reduced processing The unique product design has similar reveal, costs from that of bulk materials. weight, and installation practices as an asphalt shingle and also generates electricity. Electrical “Our automated and fully integrated circuitry is integrated into each shingle and the manufacturing process, from substrate to shingles are connected by wireless plug-style final module assembly and test, allows us to connectors. The technology blends form and reach high manufacturing efficiencies and function, aesthetics and performance into a low costs more rapidly than other competing solar solution that is accessible and affordable technologies,” said Iga Hallberg, Vice President for homeowners. of Business Development for HelioVolt. “The
Proficy solution can help us to keep plant yield The DOW POWERHOUSE Solar Shingle was and throughput high, as well as ensure quality. named one of the “50 Best Inventions of 2009” Ultimately, this will lead to better and more cost- by Time magazine, and is expected to be effective solar modules for our customers.” available in 2011. As a new company, HelioVolt needed a solution that is easily replicated to new plants, but also HelioVolt Chooses GE Intelligent Platforms’ needed the solution to scale data storage for Proficy Software up to 30 years to satisfy warranty requirements. 2010-03-24 In addition, high volume manufacturing was
a must to drive cost down while maintaining HelioVolt Chooses GE Intelligent Platforms’ quality. Proficy Software To Achieve a Competitive Advantage Through Complete Visibility and “HelioVolt had some tight project deadlines to
176 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest meet to satisfy their investors, so only a turnkey Cree LEDs Light Up Dallas American solution supported by rapid implementation Airlines Center Video Screens services would work for them,” said Erik 2010-03-24 Udstuen, Vice President of Software and Services for GE Intelligent Platforms. “Proficy High Definition Video Screens Enhance the offers a complete Lean Manufacturing solution Fan Experience that provides the flexibility to add equipment and optimized work processes as HelioVolt Cree, Inc., a market leader in LED lighting, scales its business.” announces that its high brightness LEDs are used in Lighthouse Technologies’ high definition The software system employed at HelioVolt is video screens installed this season in the made up of five core elements of the Proficy American Airlines Center, the Dallas home to suite providing the company with robust both the NBA’s Mavericks and NHL’s Stars. redundancy, enhanced data security, reliable Cree’s versatile 3-in-1 high-brightness LEDs information and increased control of every are delivering crystal-clear, high definition aspect of operations through access to critical images to fans throughout the arena. data. By delivering web-based visualization and real-time analytics, operators are able to In addition to hosting thousands of NBA increase efficiency and optimize production and NHL fans, the American Airlines Center processes in real-time resulting in reduced also features numerous concerts and live costs and increased profitability. entertainment throughout the year. Opened nearly 10 years ago and seating up to 20,000, “GE’s experience in manufacturing as well the installation of 25 Lighthouse LED video as the company’s ability to get a complete screens is part of a large-scale technological system up and running in a short time frame renovation project at the arena. This includes were key to working with HelioVolt,” concluded the first 1080x1920 high-definition video screen HelioVolt’s Hallberg. “We are looking forward in any NBA or NHL facility. Overall, the new to a bright future in the solar business and digital screens will increase video visibility we think this software solution will help us get throughout the facility, providing spectators there.” with dramatic instant replays, important scoring information and dynamic ad content in vivid For more information: www.ge-ip.com/solar. color and ultra-sharp detail.
About GE Intelligent Platforms “Cree’s Screen Master high-brightness LEDs provide excellent quality and performance, GE Intelligent Platforms is an experienced helping Lighthouse Technologies deliver vibrant high-performance technology company and a color and crisp detail,” said Paul Thieken, Cree global provider of software, hardware, services, director of marketing, LED components. “Sports and expertise in automation and embedded fans and concert attendees alike are sure computing. We offer a unique foundation to appreciate the stunning views, on-screen of agile and reliable technology providing statistics and high-resolution action offered by customers a sustainable competitive advantage the state-of-the-art Lighthouse video screens.” in the industries they serve, including energy, water, consumer packaged goods, government “Cree’s broad product portfolio of LEDs & defense, and telecommunications. GE featuring high-intensity output and wide Intelligent Platforms is headquartered in viewing angles were the optimal solution Charlottesville, VA. For more information, visit for all the video screens, including the 4mm www.ge-ip.com. high resolution, high definition video screens Lighthouse designed for the American
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Airlines Center,” said Ed Whitaker, Lighthouse amplifiers in systems that require increased Technologies North American Sales Director. linearity for high data rate transmission.
The arena’s core display consists of four Key Features Lighthouse LED screens, each producing high-quality, superior-focus images to keep basketball and hockey fans front and center * Frequency range: 37 to 40GHz with all the action, and providing advertising * 1 Watt P1dB output power screens on the top and bottom sections of the * 35dBm OIP3 for high linearity screen. At each end of the arena, two stadium- * 50 ohm matched on input and output sized video screens have been installed, each * ESD protection (50V MM and 250V HBM) three times larger than the previous monitors. Pricing and Availability
Avago’s AMMP-6442 and AMMC-6442 are Avago Technologies Expands Series of Low available now with pricing starting from $29 Cost Power Amplifiers for Point-to-Point and $27, respectively in 1,000 unit volumes. Radio Transmitters More information about Avago Technologies’ 2010-03-24 wireless products can be found at: www. avagotechwireless.com. New 1-Watt Power Amplifiers Target Point-to- Point, Point-to-Multi-Point Radio Systems in the 37 to 40GHz Frequency Range TRIQUINT NAMED “MOST POPULAR Avago Technologies, a leading supplier SEMICONDUCTOR BRAND IN CHINA” BY of analog interface components for CHINA ELECTRONIC NEWS communications, industrial and consumer 2010-03-25 applications, today announced a new pair of low cost 1-Watt power amplifiers (PAs) for CEN Recognizes TriQuint’s Brand, Sales, use in millimeter wave (mmW) communication Products, Service and Localization transmitters that operate at frequencies between 37 and 40GHz. Avago’s AMMP-6442 TriQuint Semiconductor, Inc. a leading RF monolithic microwave IC (MMIC) is a linear front-end product manufacturer and foundry power amplifier offered in a 5 by 5 mm surface services provider, announced it received mount (SMT) package, while the AMMC- China Electronics News’ (CEN) “Most Popular 6442 is a MMIC die. Typical applications Semiconductor Brand in China” award for include Point-to-Point and Point-to-Multi-Point 2009. This award recognizes TriQuint’s brand radio systems, and mmW communication influence, sales revenue, product performance applications. and service, as well as localization efforts in China. Award recipients were chosen by a Both the AMMP-6442 and AMMC-6442 PAs combination of the CEN editorial team and the from Avago provide 30dBm of typical output results of an online poll on CEN’s website. power and 23dB of typical small-signal gain and are designed to provide high efficiency to help TriQuint established business in China in reduce power consumption. These MMICs, 2001 and provides radio frequency solutions which provide good linearity and high gain, are for mobile devices, wireless communications suitable for high linear applications and have network infrastructure and foundry services. 35dBm of output third order intercept point TriQuint has worked to establish a footprint making them ideal for use as last stage power in China by opening offices in Shanghai,
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Shenzhen and Zhongshan, launching a solar technology is,” said Joe Laia, CEO of Chinese language website, and working with MiaSole. local universities to increase awareness of radio frequency technology. The project is a milestone for MiaSole, marking the company’s first commercial project in “We are honored to receive this award from California. China Electronic News,” said Ting Xiong, China Country Manager of TriQuint. “In 2010 TriQuint MiaSole’s CIGS thin-film photovoltaic solar is celebrating its 25th anniversary and over panels convert 10.5% of sunlight into electricity the course of our history, we’ve worked hard and have some of the highest efficiency rates to deliver innovative, high-quality products that for thin film solar technology in the world. The enable the devices and networks for voice, data products are designed specifically for large- and video. We are pleased that our efforts to scale rooftop and ground mount installations partner with Chinese companies are recognized for utilities, independent power providers and by readers of China Electronic News.” industrial scale deployments. SOURCE MiaSole
Solar Energy Leader MiaSole Participates in Chevron’s Project Brightfield Solar Installation JPSA Awarded Laser Scribing Patent in 2010-03-24 China 2010-03-24 CIGS Manufacturer Installs 200 kW at Emerging Solar Testing and Evaluation Facility J. P. Sercel Associates Inc., announced that China P.R. has awarded a patent to JPSA MiaSole, a leading manufacturer of Copper covering the unique laser scribing technology Indium Gallium Selenide thin-film photovoltaic used by JPSA Laser. solar panels, today announced the installation of thin-film modules providing 200 kW of power The same process has been previously at Project Brightfield, a 740KW solar energy patented by JPSA in the USA, Taiwan, Korea, demonstration facility owned by Chevron and Japan. Corporation at their former refinery site near Bakersfield, California. JPSA’s patented scribing technology permits an industry-leading 2.5um kerf, which provides more die per wafer, higher throughput, less Project Brightfield brings together seven debris, minimized heat affected zone (HAZ), emerging solar photovoltaic companies for the and faster return on investment (ROI). The testing and evaluation of 7,700 solar panels, making it one of the most comprehensive sites ChromaDice system significantly increases throughput and yield. in the United States. The site will measure the amount of energy produced by each solar technology and monitor how weather elements – such as temperature, rain, wind and humidity – affect the panels’ performance.
“Solar energy is one of the most cost effective, efficient sources of energy on earth and we are pleased to be a part of a project that shows not only the power of solar energy, but also how efficient and reliable MiaSole’s CIGS thin film
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of Moore’s Law well into the future.
This technology breakthrough is the result of research funded by Science Foundation Ireland and conducted by a team of scientists at Tyndall led by Professor Jean-Pierre Colinge. They designed and fabricated a junctionless transistor that significantly reduces power consumption and greatly simplifies the IC manufacturing process. Currently, all existing transistors are based upon junctions, which are formed when two pieces of silicon with different In announcing the new China P.R. patent, polarities are placed side by side. Controlling Jeffrey Sercel, JPSA’s Chief Technology the junction allows the current in the device Officer, said, “This patent protects our growing to be turned on and off, and it is the precise presence in China’s laser scribing market. fabrication of this junction that determines the JPSA has long been in the forefront of characteristics and quality of the transistor. It is advancing new laser techniques for LED and also a major factor in the cost and complexity of semiconductor manufacturing, and we look semiconductor production. forward to providing more of our high precision Tyndall’s groundbreaking technology eliminates laser systems to manufacturers in China and the need for a junction. Instead, the current throughout the world.” flows in a very thin silicon wire and is perfectly controlled by a “wedding ring” structure that For more information, visit www.jpsalaser.com, electrically squeezes the silicon wire in the or call Tel. 603.518.3200. same way that the flow of water through a hose can be controlled by squeezing the hose. These new structures are easy to fabricate, Tyndall CEO takes III V breakthrough to even at extremely small design nodes, thereby Silicon Valley offering a significant potential to reduce 2010-03-24 manufacturing costs.
Ireland’s Tyndall Institute’s CEO visits Silicon As design nodes shrink, minimizing current Valley to discuss junctionless transistors leakage has become a significant challenge. The Tyndall junctionless devices have near Prof. Roger W. Whatmore, CEO of Tyndall ideal electrical properties and behave like the National Institute, University College Cork, most perfect transistors, thereby alleviating this has visited Silicon Valley, participating in challenge. In addition, they have the potential a Trade and Investment Mission led by to operate at greater speeds and consume less Ireland’s Prime Minister, Brian Cowen. The energy than the conventional transistors used Mission was organized by Enterprise Ireland, in today’s microprocessors. the Irish state agency responsible for the development and promotion of Ireland’s In other developments, researchers at indigenous business sector. Prof. Whatmore Tyndall are exploring the use of alternative will present information on a recent technology semiconductor materials formed from the breakthrough achieved by Tyndall—the world’s elements in group 3 and 5 of the periodic table. first junctionless transistor—a development that These elements, known as III-Vs, have superior could revolutionize semiconductor microchip properties to silicon and offer the possibility of manufacturing and help ensure the continuation building microchips with superior performance
180 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest and greater energy efficiency than those the rising video and mobile data traffic,” said produced today. Young Sohn, President and CEO, Inphi.
Fabricating fully operational III-V transistors “Our new 4336TA will enable customers will require combining III-V semiconductors to better manage the increasing 40 Gbps with insulators of only a few atomic layers in data traffic on the network, while providing thickness. To improve device performance, improvements in signal integrity, capacity and these insulating layers must have a high power.” dielectric (high-k) constant. One of the major challenges in fabricating III-V transistors is the “Over the next two years, service providers ability to control the properties of the interface worldwide will either plan to use or already are between the III-V semiconductor and the high-k using 40 Gbps serial technologies for router layers. Researchers at Tyndall, led by Dr. Paul connections,” said Andrew Schmitt, Directing Hurley, have recently developed a new process Analyst, Optical, Infonetics Research. “Due that results in a fourfold improvement in the to the rapid growth of the 40 Gbps optical electronic properties of this critical high-k/III-V market in 2009, with port shipment roughly interface that will reduce the voltage required to doubling when compared to 2008, companies turn the transistor on and off. like Inphi that have a strong technology and market position will be able to take advantage of the expected expansion of 40 Gbps serial deployments.” Inphi Introduces 40 Gbps TIA for Very Short Reach Applications and Next-Generation Innovative analog integrated circuit design Networks techniques from Inphi are enabling the rapid 2010-03-24 growth of 40 Gbps serial deployments. The 4336TA delivers the highest gain, highest Inphi Corporation, a high-speed analog sensitivity and excellent optical overload semiconductor company, today introduced its performance for an unparalleled dynamic 4336TA Transimpedance Amplifier (TIA) for range, which improves link margins and next-generation Small Form-Factor 40 Gbps leapfrogs the performance of other products Very Short Reach (VSR) transponder modules. offered today.
The new 4336TA is a high-gain TIA that “One of the most challenging 40 Gbps issues is enables transponders to achieve high- to connect routers-to-routers and core routers- sensitivity and high-overload performance to-DWDM systems at the native 40 Gbps over a wide range of temperatures and supply serial bit rate, while maintaining performance voltages. As a result, Inphi helps its customers over wide dynamic range of optical power, simplify the design, production and installation temperature, and supply voltage conditions,” of 40 Gbps serial components and equipment. said Loi Nguyen, Vice President Networking, The new 4336TA component will be shown at Communications and Multi-Market Products, OFC/NFOEC 2010 in San Diego, March 23- Inphi. “Customers have asked that we build a 25. Engineering samples of the 4336TA are TIA solution to solve this technical challenge. available immediately. We are pleased to introduce the new 4336TA to address our customers’ problems and “Networking and data centers play a vital role enable them to quickly develop SFF 40 Gbps in the delivery of cloud services, which require VSR transponder modules for SONET/SDH more speed and scale than ever before. We as well as for future 40 Gigabit Serial Ethernet are seeing more organizations and service applications.” providers rapidly moving from 10 Gbps to 40 Gbps core and backbone networks to handle The new 4336TA is designed to meet the
April/May 2010 www.compoundsemiconductor.net 181 news digest ♦ compound semiconductor demanding signal integrity requirements of “The significance of this announcement is 40 Gbps serial connections over diverse that it demonstrates the viability of extending environmental conditions. Inphi’s new 4336TA the transmission distance of 40G serial offers exceptional performance margin in terms transmission in a conventional single-mode of sensitivity and overload. The high-gain environment, offering higher bandwidth per functionality eliminates the need for external fiber,” said Masahiro Kobayashi, general limiting amplifiers and other integrated circuits. manager of Lightwave Devices Division, The new 4336TA helps reduce the complexity Sumitomo Electric Device Innovations, Inc. of 40 Gbps serial components and equipment “This demonstration paves the way for a rapid with the following features. commercial development of 40G systems.”
- Wide dynamic range The demonstration will feature Sumitomo - Best optical overload, > +6 dBm Electric’s 40G EML Laser and 40G Receiver. - Highest gain 40 Gbps TIA, 3.5 KΩ The 40G EML is ideal for 43Gb/s serial - Stable bandwidth and signal integrity over applications and will be capable of distances operating conditions up to 40 km with an integrated modulator driver IC. The 40G Receiver is housed in an 8-pin Availability package with PIN and TIA and supports 30 GHz bandwidth. Engineering samples of the Inphi 4336TA for 40 Gbps VSR modules and SONET OC-768 and Consisting of MP1800 BERT Signal Quality SDH STM-256 equipment are available now. Analyzer and MP1821A/1822A External 56G-MUX/DeMUX, Anritsu’s 40G test solution supports testing from 0.1Gbps to 56Gbps Sumitomo Electric and Anritsu to serial BERT with the 3.5Vp-p high-amplitude Demonstrate 40Gb/s Serial EML 1310nm output and cross point adjustment. The solution Technology for High-bandwidth Next- provides the fastest Tr/Tf and minimum intrinsic generation Networks jitter. The flexible and expandable configuration 2010-03-24 of the MP1800A BERT allows users to customize the system to fit their specific Sumitomo Electric Industries, Ltd., a provider applications. The solution supports not only the of optical components and modules, and 56G serial BERT but also 100G applications, Anritsu Company, a global leader in optical such as CFP testing (25.78G x 4) and DP- test solutions, will be conducting a joint 40Gb/s QPSK. technology demonstration in Anritsu’s booth – #3140 – during OFC/NFOEC 2010. New Family of High Performance Front End The demonstration will showcase Anritsu’s Modules for Smart Energy Applications MP1800 BERT Signal Quality Analyzer and 2010-03-24 External 56G-MUX/DeMUX, and Sumitomo Electric’s 40G EML Laser and 40G Receiver. RF Micro Devices, Inc., a global leader in the The Sumitomo devices are XLMD MSA design and manufacture of high-performance compliant. The XLMD MSA defines the radio frequency components and compound electrical and optical interface specifications semiconductor technologies, announced for 40Gbit/s pigtail optical devices supporting today it is teaming with Ember Corporation to the emergence of the compact 40G transceiver introduce ZigBee front end modules (FEMs) module market for high-capacity networks and for smart grid applications that give utilities and storage systems. consumers more control over how they monitor and save energy.
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ZigBee is a global wireless networking standard leadership in RF components and compound for monitoring and control in a variety of semiconductors into multiple industries.” applications such as energy management, safety and security, lighting and appliances. “By teaming with RFMD we are further simplifying ZigBee development for OEMs RFMD’s new ZigBee FEM product family, and bolstering our partner ecosystem to unveiled today, enables customers to bring include a global leader in high performance new ZigBee products to market faster, RF components. Fine tuned to work with the while dramatically reducing the number of Ember platform, RFMD’s ZigBee FEMs deliver components required and the size, cost, and impressive size reduction and outstanding power consumption of smart grid FEMs. performance, thereby enabling faster, easier development of smart energy products While RFMD’s newest ZigBee FEMs can be worldwide,” said Bob LeFort, Ember CEO. used with any ZigBee application, the product family initially targets smart grid and smart Ember’s ZigBee networking systems - chips, energy applications such as smart meters, ZigBee protocol software and tools -simplify the demand response, and home area network complexity of integrating embedded software, (HAN) devices. Beyond smart energy, RFMD’s networking and RF for developing low power, ZigBee FEM family is also designed for wireless products in smart energy, connected industrial applications and any other wireless home and other remote monitoring and control sensing and control applications that demand applications. Since its inception, Ember has low power consumption, high performance and been an industry leader, future-proofing proven reliability. customers and partners like RFMD with the most advanced features. RFMD’s ZigBee FEM family includes the RF6525, RF6515, and RF6535, which are The EM300 Series is Ember’s next-generation optimized to operate with the Ember EM300 ZigBee chip family, and the world’s first ARM Series system-on-chip (SoCs) - EM351 and Cortex-M3 based ZigBee SoC, packing EM357 - as well as Ember’s EM250 SoC and the industry’s highest wireless networking EM260 network co-processor. performance and application code space into the lowest power-consuming chip set. Bob Van Buskirk, president of RFMD’s Multi- The EM250 and EM260 ZigBee are the most Market Products Group (MPG), said, “RFMD deployed family of ZigBee semiconductors and Ember are leveraging each other’s delivering excellent RF performance, sensitivity expertise to deliver high-performance, highly and transmit power for long range, and 802.11 integrated ZigBee solutions that reduce design immunity. cycle times, lower costs, and accelerate time- to-market. Large-scale smart energy projects For additional information please visit http:// are forecast to grow rapidly, with particular www.rfmd.com/ember/zigbeerf.aspx . demand anticipated in low-power wireless IC technologies like ZigBee.
“RFMD anticipates our collaboration with PV cell utilises GaN 2010-03-23 Ember will directly benefit our smart energy customers while supporting continued growth The development of a PV cell which utilises a in the burgeoning smart energy marketplace. mix of GaN and manganese semiconductors These diversification efforts, and RFMD’s could help improve the bandwidth of other diversified growth initiatives currently conversion. underway, highlight the embedded value in our strategic mission to extend and leverage our The production of a new photovoltaic (PV) cell
April/May 2010 www.compoundsemiconductor.net 183 news digest ♦ compound semiconductor which uses gallium nitride (GaN) compound president Brian Balut. semiconductors has been announced by a Japanese research group. “Our drivers set standards, simplify RF connectivity and break new ground.” Led by Saki Sonoda, associate professor at the Kyoto Institute of Technology, the research The devices will be showcased at the Optical team claimed it could improve the energy Fiber Communication conference that is taking output of PV cells through the combination of place this week (March 22nd to 25th) in San manganese and GaN to increase the bandwidth Diego, California. of light which it can convert to electricity. The company’s main headquarters are situated The team said that at present, open voltages in Portland, Oregon in the US, but it has bases are high at approximately two volts on of operations spread out across four continents average, but energy conversion rates remain - including in San Jose, Costa Rica, in Munich, disappointing - a situation which it hopes to Germany and in Shanghai, China. rectify in the near future. However, TriQuint’s main 100 mm gallium Research carried out by the team found that arsenide and gallium nitride fabrication plant is following the introduction of manganese to located in Richardson, Texas. GaN the product was able to convert a wider wavelength band of light including ultraviolet, visible and infrared. Emcore announces optical cable results 2010-03-23 The Kyoto Institute of Technology presently has in excess of 2,700 students enrolled Fibre optics developer Emcore has published and operates an international exchange findings regarding the reliability of its optical programme, providing opportunities to people cabling. across the globe to take part in research projects such as this. Compound semiconductor and fibre optic subsystems developer Emcore has published the results of a study into the reliability of its 20 TriQuint delivers world’s first 40 and 100 Gb per second (Gbps) optical cables. Gbps SMT amplifiers 2010-03-23 The firm revealed just five failures over the past three years in one billion hours of device World-first product delivery for TriQuint. operation and, as such, concluded fibre optic is able to deliver faster, more reliable and Radio frequency (RF) product developer higher bandwidth transfer rates than alternative and foundry services provider TriQuint has technologies. announced the release of the world’s first surface-mounted (SMT) 40 and 100 GB per At present, fibre optic cabling acts as a second driver amplifiers. compact, lightweight alternative to copper cables in the telecoms and information Sustainability has been put at the heart of the exchange sectors. new product, the firm said, as it uses half the energy of its competitors at just 1.7 Watts. Chris Wiggins, director of Emcore’s enterprise business group, said: “Emcore is the field- “TriQuint SMT modulator drivers have proven proven market leader in high-quality and themselves in the market,” said company vice- reliable active optical cable products.”
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infrastructure networks. He added the company has based its next- generation 40 Gbps optical cabling on the According to Cisco, mobile data traffic volumes same technology and therefore hopes to deliver are projected to increase at a compounded similar levels of performance in the future. annual growth rate of 131 percent from 2008 to 2013. As a result, mobile operators will need Emcore is based predominantly in the US and to begin to install new base stations, routers operates facilities in Albuquerque, New Mexico, and backhaul network equipment starting now Ewing, New Jersey, San Diego, Alhambra to avoid network traffic jams and to preserve and Newark, California and Warminster, their highly profitable data service revenue. Pennsylvania. Furthermore, upgrades and expansion to existing infrastructure will be needed - requiring increased analog and mixed signal content. Skyworks Launches Industry’s Widest The SKY73134 addresses these needs and Frequency Range Integrated Synthesizers does so with one common device for all for 3G/4G Base Stations platforms. 2010-03-23 “Skyworks is pleased to be expanding its Solutions Enable Expanded Capacity to product portfolio with a solution offering the Support Increasing Mobile Data Traffic broadest frequency range available on the market today,” said Wesley Boyd, director of Skyworks Solutions, Inc., an innovator of marketing at Skyworks. “This breakthrough high reliability analog and mixed signal synthesizer enables customers to implement semiconductors enabling a broad range of a one-chip solution for all frequencies versus end markets, today introduced the industry’s more than ten different discrete solutions - first suite of high performance broadband significantly reducing board size requirements, synthesizers spanning ultra wide frequency cost, and streamlining customer supply ranges from 375 MHz to 5.6 GHz. Skyworks’ logistics.” new device, which is designed to cover all GSM, WCDMA and LTE frequency bands About the SKY73134 with one device, supports the world’s leading 3G and 4G base station providers including The SKY73134 is a wideband integer-N Ericsson, Huawei, ZTE, Alcatel/Lucent, and frequency synthesizer with an approximate Nokia/Siemens. Leveraging state-of-the-art 6 GHz locking range. This extremely small design techniques, Skyworks has been able 5 x 5 millimeter (mm) device includes four to deliver very stringent requirements all on a differential VCOs which, by applying internal single silicon die. VCO frequency division, continuously cover the The SKY73134’s performance allows radio output frequency from 0.375 to 5.6 GHz. designers to support increasing levels of voice and data traffic volumes, enables design The integrated phase noise from 100 Hz to flexibility across multiple applications, and 100 kHz measures less than 0.6 degree RMS is applicable for use in microwave-link and at 960 MHz frequency. In addition, the phase software-defined radios. With the addition of noises at 100 kHz, 1 MHz and 3 MHz frequency this new synthesizer, Skyworks continues to offsets are -115 dBc/Hz, -143 dBc/Hz and 150 broaden its infrastructure and linear products dBc/Hz respectively, making the SKY73134 an portfolio. At a higher level, the company is ideal solution for GSM/EDGE, CDMA/WCDMA capitalizing on mobile Internet applications and LTE base station transceivers. - supporting both handsets as well as The SKY73134 is controlled by a bi-directional
April/May 2010 www.compoundsemiconductor.net 185 news digest ♦ compound semiconductor read/write serial to parallel interface which proven reliability. allows flexible device configurations that may be locked with an external VCO or external RFMD’s ZigBee FEM family includes the PLL, or be used as a divider chain only. RF6525, RF6515, and RF6535, which are Furthermore, the device is a key building block optimized to operate with the Ember EM300 for any radio system design including backhaul, Series system-on-chip (SoCs) - EM351 and military and satellite applications that require EM357 - as well as Ember’s EM250 SoC and a combination of high performance, low power EM260 network co-processor. and multi-purpose features. Bob Van Buskirk, president of RFMD’s Multi- Market Products Group (MPG), said, “RFMD and Ember are leveraging each other’s RF Micro Devices Features Ember ZigBee expertise to deliver high-performance, highly Technology in New Family of High integrated ZigBee solutions that reduce design Performance Front End Modules cycle times, lower costs, and accelerate time- 2010-03-24 to-market. Large-scale smart energy projects are forecast to grow rapidly, with particular RF Micro Devices, Inc., a global leader in the demand anticipated in low-power wireless IC design and manufacture of high-performance technologies like ZigBee. radio frequency components and compound “RFMD anticipates our collaboration with semiconductor technologies, announced Ember will directly benefit our smart energy today it is teaming with Ember Corporation to customers while supporting continued growth introduce ZigBee(R) front end modules (FEMs) in the burgeoning smart energy marketplace. for smart grid applications that give utilities and These diversification efforts, and RFMD’s consumers more control over how they monitor other diversified growth initiatives currently and save energy. underway, highlight the embedded value in our strategic mission to extend and leverage our ZigBee is a global wireless networking standard leadership in RF components and compound for monitoring and control in a variety of semiconductors into multiple industries.” applications such as energy management, safety and security, lighting and appliances. “By teaming with RFMD we are further simplifying ZigBee development for OEMs RFMD’s new ZigBee FEM product family, and bolstering our partner ecosystem to unveiled today, enables customers to bring include a global leader in high performance new ZigBee products to market faster, RF components. Fine tuned to work with the while dramatically reducing the number of Ember platform, RFMD’s ZigBee FEMs deliver components required and the size, cost, and impressive size reduction and outstanding power consumption of smart grid FEMs. performance, thereby enabling faster, easier development of smart energy products While RFMD’s newest ZigBee FEMs can be worldwide,” said Bob LeFort, Ember CEO. used with any ZigBee application, the product family initially targets smart grid and smart Ember’s ZigBee networking systems - chips, energy applications such as smart meters, ZigBee protocol software and tools -simplify the demand response, and home area network complexity of integrating embedded software, (HAN) devices. Beyond smart energy, RFMD’s networking and RF for developing low power, ZigBee FEM family is also designed for wireless products in smart energy, connected industrial applications and any other wireless home and other remote monitoring and control sensing and control applications that demand applications. Since its inception, Ember has low power consumption, high performance and been an industry leader, future-proofing
186 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest customers and partners like RFMD(R) with the high performance computing applications, most advanced features. the bandwidth limitations, power and size requirements of copper interconnects are The EM300 Series is Ember’s next-generation reaching their limits and rapidly becoming less ZigBee chip family, and the world’s first ARM effective. As a result, system designers are Cortex-M3 based ZigBee SoC, packing making the transition to optical interconnects, the industry’s highest wireless networking which have the capability to handle much performance and application code space higher bandwidths for longer reach lengths, into the lowest power-consuming chip set. while consuming less power to operate, The EM250 and EM260 ZigBee are the most and with improved EMI and flexible cable deployed family of ZigBee semiconductors management than copper interconnect delivering excellent RF performance, sensitivity solutions. and transmit power for long range, and 802.11 immunity. Avago’s QSFP transceiver module provides designers with maximum flexibility to support For additional information please visit http:// installations of varying cable links or for difficult www.rfmd.com/ember/zigbeerf.aspx . cable plant installations. This new QSFP transceiver module, which is now available for sampling, incorporates Avago’s proven Avago Technologies Announces 40Gbps integrated circuit and VCSEL technology Ethernet QSFP Transceiver to provide high performance and long life 2010-03-23 reliability. With data rates of 10Gbps for up to 100 meters using OM3 fiber, Avago’s QSFP High Performance Transceiver Module module is designed to operate over multimode Integrates Four 10 Gbps Data Lanes to Provide fiber systems using a nominal wavelength 40Gbps Aggregate Bandwidth of 850nm. The electrical interface uses a 38 contact edge type connector while the optical Avago Technologies, a supplier of analog interface uses either an 8 or 12 fiber MTP interface components for communications, (MPO) connector. industrial and consumer applications, today announced a new four-channel pluggable Avago’s QSFP transceiver module also parallel optic QSFP transceiver module for provides superior electro-optical performance 40 Gigabit Ethernet applications. This latest to enable optimal jitter performance required addition to Avago’s expanding portfolio of QSFP for high speed computing, server clustering, transceivers is a high performance module, Infiniband and Ethernet switching and core fully compliant to the IEEE 802.3ba 40GBASE routers. Additionally, this transceiver is hot pluggable for ease of installation and servicing, SR4 specification. This transceiver provides a solution for multi-lane data communication and backward compatible with 5 and 2.5Gbps and interconnect applications that integrate per channel applications. four independent 10 Gigabit per second (Gbps) Avago will be demonstrating its latest high data lanes in each direction to provide 40Gbps density transceivers and parallel optics aggregate bandwidth. In addition to 40Gbps solutions at the OFC/NFOEC Conference this Ethernet interconnects, this transceiver can be week at the San Diego Convention Center (in used in datacom/telecom switch, and router Booth #2027) March 23 – 25. connections, as well as data aggregation and backplane applications.
With the need for high bandwidth and density in many of today’s data centers and
April/May 2010 www.compoundsemiconductor.net 187 news digest ♦ compound semiconductor
JDSU to Increase Agility of Optical 1x9 Mini 50 WSS. This will enable increased Networks cost efficiencies in a compact form factor for 2010-03-23 applications requiring high numbers of add/ drop ports and colorless and directionless JDSU today announced that it is continuing to applications. expand its family of reconfigurable optical add •Mini 100 GHz Low Port Count WSS -- 1X2 drop multiplexer (ROADM) and tunable XFP and 1X4 WSSs designed to provide high optical products to increase the agility of optical performance but lower cost points for smaller- networks. sized 100GHz applications. •Mini 50 GHz Low Port Count WSS -- Will JDSU will introduce a series of these new offer 1X2 and 1X4 WSSs designed for high products over the next six months to network performance at lower cost points for smaller- equipment manufacturers (NEMs). sized 50 GHz applications.
“Bandwidth capacity requirements continue to Tunable XFP Innovations increase, requiring a great degree of flexibility Tunable XFP transceivers, products in the network. To support this level of agility, responsible for sending and receiving signals all of the components within an optical network within agile optical networks, provide a must also be agile,” said Craig Iwata, senior dramatically smaller, pluggable and cost director of Marketing for the CCOP business effective solution compared to older transceiver segment at JDSU. “We’ve collaborated with products. They are transforming available our customers on a mix of new products that will help them get the most agility out of every fixed XFP ports into tunable interfaces. New tunable XFP products from JDSU will provide network node in the most cost efficient way performance enhancements and include: possible.”
As businesses and consumers use more on •Linear Tunable XFP+ Transceiver -- Will provide extended reach of 200km and demand applications such as video, increasing enhanced tolerance to fiber impairments. volumes of network traffic are entering networks in unpredictable ways. NEMs and •Enhanced Tunable XFP Transceiver -- Will provide increased power for metro and regional service providers are evolving their networks applications and improved OSNR performance. to more sophisticated architectures that can •Zero Chirp Tunable XFP Transceiver -- flexibly support this traffic. Designed to support long haul applications. New products from JDSU will enable colorless To see JDSU’s new products and its entire AON and directionless architectures, essentially portfolio, visit Booth # 2015 at OFC-NFOEC enabling any add/drop port to be switched to 2010 in San Diego, CA from March 23 - 25, any degree in the ROADM node. 2010. ROADM Innovations
ROADMs add, drop, and switch wavelengths Avago Technologies Announces GPS Front- within an agile optical network. JDSU will End Module introduce new ROADM products over the 2010-03-23 next six months tailored to meet various requirements that include: Miniature GPS Front-End Module Integrates a •Mini 50 GHz High Port Count WSS -- Will Low Noise Amplifier with Pre- and Post High offer an increased port count of 23 ports Rejection FBAR Filters in 3 by 2.5mm Package with the same size and performance as the
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Avago Technologies, a l supplier of analog and WLAN band frequencies. These features interface components for communications, combine to make the ALM-2712 an ideal industrial and consumer applications, today solution to help enhance the performance of announced the expansion of its market leading the GPS receivers used in mobile handsets and ultra low-noise GPS front-end modules for other GPS applications. mobile GPS applications. The ALM-2712, which has the lowest noise figure of any GPS filter- Features LNA-filter modules in the industry, integrates •Miniature package with no external RF pre- and post-high rejection FBAR filters to matching helps reduce board space and provide superior performance. This integrated number of components required FBAR filter provides low insertion loss in GPS •Very low noise figure: 1.26 dB typical band frequencies and exceptional out of band •Low external component count (only 2 bypass rejection at cellular, DCS/PCS and WLAN band capacitors) frequencies, making it an ideal device for use •Shutdown current: < 1 uA in simultaneous GPS (S-GPS), voice and data •CMOS compatible shutdown pin operations in today’s mobile handsets. •ESD: > 3kV at RFin pin S-GPS and other location-based GPS services •Adjustable bias current via single external used in mobile handsets require a high level of resistor/voltage receiver sensitivity. Avago’s ALM-2712 delivers •Advanced GaAs E-pHEMT and FBAR a very low noise figure and high linearity technology performance which helps to significantly •Halogen free improve the sensitivity of the GPS receivers. By •Pb-Free and RoHS compliant integrating the low noise amplifier (LNA), pre- Pricing and Availability and post high-rejection FBAR filters, and other RF matching components into the module, Avago’s ALM-2712 GPS module is priced at the ALM-2712 does not require any external $1.44 each in 10,000 piece quantities. Samples RF matching components. As a result, it helps and production quantities are available now customers to simplify the design process, and through Avago’s direct sales channel and reduce board space and component count in worldwide distribution partners. their applications. Moreover, the ALM-2712 has a built-in shunt inductor at the RF input pin to enhance ESD production, which allows Cree Expands High-Power Color LED Family the device to survive more than 3kV of Human with New XLamp XP-C Color LEDs Body Model (HBM) ESD charge at the RF input 2010-03-23 pin. Cree, Inc., expands its family of high-power Avago’s ALM-2712 GPS module is housed in a color LEDs with the availability of XLamp XP-C miniature 3.0 by 2.5 by 1.0 mm MCOB package color LEDs in royal blue, blue, green, amber, and is ideal for use in space constrained red-orange and red. These new XP-C LEDs are applications. At a typical operating condition of 10-to-50 percent brighter than Cree’s previous 2.7V and 7.5mA, this GPS front-end module midrange color LEDs. effectively leverages Avago’s 0.25 µm GaAs enhancement-mode pHEMT process and its leading-edge proprietary FBAR filtering XLamp XP-C color LEDs are designed for technologies, to deliver a 1.26 dB noise figure, 0.5-watt to 1-watt operation and can provide a 14.2 dB gain, and + 5 dBm input third order cost-effective solution for many color lighting intercept point (IIP3) and 89dBc/80dBc/72dBc applications. In addition, XP-C LEDs are of out of band rejection at cellular, DCS/PCS often compatible with existing optical designs,
April/May 2010 www.compoundsemiconductor.net 189 news digest ♦ compound semiconductor potentially reducing system design costs. bold solutions and Desertec certainly provides an ambitious vision,” he said. “Cree continues to expand design options within our industry-leading XLamp XP LED Right now, everything is in the planning stages, family,” said Paul Thieken, Cree, director of but Desertec is shaping up to be one of the marketing, LED Components. “Cree offers the largest construction projects ever attempted. broadest portfolio of color LEDs in the industry, from high-brightness LEDs for the signage At MENASOL 2010 taking place on May and entertainment industries to high-power 4-5 in Cairo Oliver Steinmetz, Member of LEDs for applications including architectural, the Supervisory Board & Co-Founder at color-changing, stage, emergency vehicle and DESERTEC will be speaking extensively about transportation, all in a wide range of price- their vision for solar generation in the MENA performance levels.” region, where the project is now and what you can expect to see happening in the next few Cree’s broad family of color XLamp LEDs is months. available through the Cree distribution network (www.cree.com/buyxlamp). Semiconductor Veteran Geoff Tate Named CEO of Nanosolar, Inc. First Solar has joined the Industrial 2010-03-23 Desertec initiative 2010-03-23 Company Committed to Meeting Customer Demand for Cost Efficient Solar Panels First Solar Inc on Tuesday announced that it had joined the Desertec Industrial Initiative Nanosolar, a thin film solar panel manufacturer, as an Associated Partner to demonstrate the today announced that it has named Geoff Tate potential of photovoltaic (PV) solar technology as chief executive officer. Mr. Tate is the former to provide clean, sustainable energy on a vast CEO of Rambus, Inc. and former senior vice scale by harnessing the desert sun. president and corporate officer of Advanced Micro Devices (AMD). The Desertec initiative will attempt to build renewable power plants in the deserts of North Geoff Tate served as CEO of Rambus, which Africa that will supply a significant amount specializes in the invention and design of of power to the Europe, the Middle East and high-speed chip interfaces, from 1990 through North Africa by 2050. Photovoltaics, solar 2005. Prior to Rambus, Tate served in multiple thermal, wind, and other technologies, along general management roles at AMD over the with experiments in carbon capture, will likely course of ten years. He has a bachelor’s ultimately play a role in the project. degree in computer science from University of Alberta and an MBA from Harvard University. “We look forward to working with Desertec to demonstrate the potential of renewable “Geoff is a dedicated, hard-working executive energies - and PV in particular - to deliver with a successful track record developing great clean, reliable power to the people of Africa technologies into winning businesses,” said Erik and the Middle East as well as Europe,” said Straser, Nanosolar board member and general Stephan Hansen, managing director of First partner, Mohr Davidow Ventures. “For example, Solar GmbH, the company’s European sales under Geoff’s leadership, Rambus developed and customer service unit for Europe, the and commercialized a 500MHz interface, Middle East and Africa. “The challenges of which at the time was 5-10 times faster than energy security and global warming demand competitive alternatives. We are confident that
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Geoff will be a terrific addition to Nanosolar VUV technology is the most sensitive non- as we bring our thin film CIGS (copper indium destructive optical metrology available for gallium selenium) solar panels to market.” ultra thin FEOL layers such as Hi-K dielectric and Metal gates, therefore, complements Brian Sager, founder, board member and Jordan Valley’s well-established X-ray-based vice president corporate development, semiconductor metrology solutions, already in added, “We have market-leading customers, use in most advanced fabs worldwide. strategic investors, a strong balance sheet, and groundbreaking technology that has the Founded in 2002, Metrosol’s SHORTY potential to enable the lowest cost solar panels ES (Enhanced Spectrum) Series, short in the industry. Our highest priority under wavelength optical metrology systems is the Geoff’s leadership will be to meet our customer only commercially-available technology able commitments and help make our customers to collect optical reflectance data down to 120 successful.” nanometers. These shorter wavelengths enable greater sensitivity on thickness, composition, and optical property measurements on the X-Ray-based Metrology leader Jordan complex films and stacks necessary to achieve Valley Semiconductors Acquires Assets desired device performance. of Semiconductor Equipment Supplier About Jordan Valley Semiconductors Ltd. Metrosol (www.jvsemi.com) 2010-03-23 Jordan Valley Semiconductors Ltd. (JVS), Jordan Valley Semiconductors Ltd. (JVS), the leader in X-ray metrology solutions for provider of X-ray based semiconductor advanced semiconductor fabs, develops metrology tools, has acquired the assets of and supplies superior metrology equipment Metrosol, an advanced Vacuum Ultra Violet for quality control of thin films based on (VUV) metrology tool firm, effective March 19, rapid, non-contacting and non-destructive 2010. X-ray technology. The company offers the Semiconductor Industry the most Metrosol’s state-of-the-art thin film comprehensive array of tools, based on measurement systems is a powerful metrology advanced XRR, XRF, HRXRD, WAXRD for the upcoming challenging ultra-thin films and SAXS technologies, ideal for both stacks of next-generation semiconductor product or blanket wafers. For the compound nodes; it is also a proven technology for semiconductors industries, JVS offers fast and several critical applications for patterned imprint economic HRXRD tools for high-brightness HDD Media manufacturing. Metrosol’s short LED (HB-LED) manufacturing; this niche wavelength VUV metrology solution enables was added in 2008, through Jordan Valley’s better and tighter process control on product acquisition of U.K.-based Bede Ltd. wafers at a throughput suitable for high-volume manufacturing. Jordan Valley’s investors include Clal Industries and Investments Ltd. (TASE: “The acquired VUV technology will strengthen CII), Intel Capital (Nasdaq: INTC) and Elron Jordan Valley’s position as a key metrology Electronics Industries Ltd. (Nasdaq: ELRN). solutions provider for the sub 45nm With headquarters in Migdal Haemek Israel, semiconductors processes while expanding the company has offices in Durham United its capabilities to new markets such as the Kingdom and Austin Texas USA, as well as emerging patterned HDD market,” commented representatives worldwide. Isaac Mazor, Jordan Valley CEO. About Metrosol (www.metrosol.com)
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Metrosol, Inc., a developer, manufacturer and transmission systems. We utilize our hybrid worldwide supplier of short wavelength optical PIC technology to combine Hybrid Coherent metrology solutions, delivers advanced thin-film Mixer with four balanced°an integrated dual 90 measurement systems that solve the needs of photodiodes and the requisite linear amplifiers next-generation semiconductor manufacturing in a single compact package,” said Tim Jenks, such as process monitoring and excursion Chairman and CEO of NeoPhotonics. suppression for high-k gate structures and multilayer dielectric stacks. Metrosol’s VUV “NeoPhotonics is actively contributing to optical metrology technology offers the only developments in the Optical Internetworking commercially available platform capable of Forum (OIF) 100G project, particularly with collecting reflectance data in the vacuum respect to Integrated Photonics Receiver,” said ultraviolet wavelength region down to 120 nm., Wupen Yuen, Vice President of Research and Metrosol is a privately-held company based in Development at NeoPhotonics. “NeoPhotonics Austin, Texas is also participating in the OIF Product Showcase* for 100G components and the NeoPhotonics ICR may be seen displayed there*,” continued Dr. Yuen. NeoPhotonics Launches Integrated Coherent Receiver (ICR) For 100 Gbps and In addition to the Hybrid Coherent Mixers and 40 Gbps Coherent Transmission Systems DQPSK°ICR, NeoPhotonics currently offers 90 2010-03-23 Hybrid Coherent Mixer°Demodulators based on PIC technologies. The 90 provides the Supports Expected Requirements of Emerging demodulation function of the ICR, requires no Standard Agreements for 100G Integrated electrical power, operates across the C or L Coherent Receivers band and is designed to be used with external photo-receivers. NeoPhotonics’ DQPSK NeoPhotonics today announced the initial demodulator consists of two Delay Line availability of its Integrated Coherent Receiver Interferometers (DLIs) and provides in-phase (ICR) for 100 Gbps and 40 Gbps transmission and quadrature analysis of a phase-encoded systems. The ICR is an integrated intradyne signal. receiver based on NeoPhotonics’ Photonic Integrated Circuit (PIC) technology. NeoPhotonics is showcasing its products this week at the OFC/NFOEC Conference and This device provides advanced demodulation Exposition in San Diego (March 23 – 25, in to analyze the state-of-polarization and booth 1125) optical phase of a phase-modulated signal *The OIF is sponsoring a Product Showcase relative to an externally supplied optical at OFC/NFOEC 2010 to display components, reference, enabling recovery of the phase- modules, and/or other hardware supporting polarization constellation of 100 Gbps Dual the OIF’s 100G project focused on Integrated Polarization Quadrature Phase Shift Keyed (DP-DQPSK) format signals. In addition, the Photonics Transmitters and Receivers. OIF ICR incorporates four sets of high sensitivity member companies and their products can balanced photodiodes with four differential be viewed at the OIF booth # 3041. For more information about the OIF, visit www.oiforum. linear amplifiers to provide four output channels at 32 Gbaud data rates. A second version com. performs the same function for 40 Gbps About NeoPhotonics applications. NeoPhotonics Corporation is a leading ”We are pleased to add the ICR to our developer and vertically integrated existing line of PIC products for high speed
192 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest manufacturer of photonic integrated circuit market in 2009. (PIC) based components, modules and subsystems for use in telecommunications “We are enthusiastic about working with Aviat networks. The Company’s products include Networks as a strategic provider of 70/80 active semiconductor, passive PLC and MEMS Gigahertz point-to-point, gigabit capacity multi-dimensional switching functions in a radio systems. Aviat’s global customer base, single product. This integration is enabled core competency in network management by nanomaterials and nanoscale design and strong IP product portfolio in support and fabrication technologies. NeoPhotonics of 4G networks, are a natural fit for our maintains headquarters in San Jose, California product and technology,” said Sam Smookler, and ISO 9001:2000 certified engineering and president and chief executive officer of E-Band manufacturing facilities in Silicon Valley and Communications. Shenzhen, China. The agreement enables Aviat to provide NeoPhotonics is a registered trademark and the its carrier and enterprise customers red dot logo is a trademark of NeoPhotonics with a complete portfolio of end-to-end Corporation. All other marks are the property of transformational 4G network solutions. Aviat’s their respective owners. backhaul solutions now cover frequency ranges from 4 to 86 GHz, the broadest range of www.neophotonics.com products available in the industry.
“We’re excited to offer our valued customers the industry’s highest performance 70/80 GHz E-Band Communications and Aviat backhaul solutions,” said Michael Pangia, Networks Sign OEM Agreement for High senior vice president and chief sales officer of Performance 70/80 GHz Backhaul Solutions Aviat Networks. “E-Band’s radios complement 2010-03-23 our portfolio of products and services and help ensure that Aviat Networks maintains AGREEMENT BROADENS AVIAT its position as a leading provider in wireless NETWORKS’ PRODUCT OFFERING FOR network backhaul solutions. This win-win CARRIERS AND ENTERPRISES relationship will increase opportunities for both companies worldwide and enable us to provide E-Band Communications Corporation, a our customers with industry-leading GigE developer of ultra-high capacity 70/80 GHz backhaul solutions at a competitive price.” point-to-point wireless backhaul solutions today announced that it has entered into an original About E-Band Communications Corp. equipment manufacturer (OEM) agreement with Aviat Networks, Inc. (Nasdaq: AVNW), a E-Band Communications Corporation is leading wireless expert in advanced IP network the leading supplier of ultra-high capacity migration. The strategic partnership enables 70/80 GHz wireless solutions, serving 4G both companies to jointly and independently carriers (WiMAX, LTE) and enterprises. In market and support E-Band’s radios worldwide. 2009, E-Band achieved the highest market E-Band’s flagship product is the E-Link share in the U.S., based on publicly available 1000EXR, a full duplex fiber-equivalent speed annual FCC license data. A key advantage Gigabit Ethernet point-to-point radio which is its Monolithic Microwave Integrated Circuit provides an industry leading +22 dBm of (MMIC) technology originally designed for output power and extremely low latency (less high-end military applications and now under than 5µs). E-Band’s products have won wide exclusive field-of-use license from a major acceptance in major 4G network deployments defense contractor. E-Band’s investors and gained a number one position in the U.S. include Avalon Ventures, Hercules Technology
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Growth Capital, Reliance ADA Group, ADC install and commission the new reactor at their Telecommunications, Investec, Express laboratory in the third quarter of 2010. Ventures, OpenAir Ventures and a top-three U.S. telecommunications carrier. Learn more at Dr. Klaus Koehler, Deputy Dept. Head of www.e-band.com. IAF’s Epitaxy Group comments, “We have already made a good start on the development About Aviat Networks, Inc. Aviat Networks, of GaN on SiC transistors on our existing Inc. (Nasdaq: AVNW), previously known as AIXTRON reactors. However, we now need to Harris Stratex Networks, Inc., is a leading significantly expand our capabilities. The new wireless expert in advanced IP network reactor will be used for the growth of AlGaN/ migration, building the foundation for the 4G/ GaN based HEMT (High Electron Mobility LTE broadband future. We offer best-of-breed Transistor) structures on 4 inch semi-insulating transformational wireless solutions, including SiC substrates. With this new system we will LTE-ready microwave backhaul, WiMAX achieve the highest uniformity and crystal access and a complete portfolio of essential quality which is necessary for the fabrication service options that enable wireless public and of AlGaN/GaN based power amplifiers and private telecommunications operators to deliver MMICs. advanced data, voice and video and mobility services around the world. Aviat is agile and The AIX 2800G4 HT will enable us to readily adaptive to anticipate what’s coming to help scale up to 11x4 inch wafers and to 6x6 inch our customers make the right choices, and our at a future point. It has all the characteristics products and services are designed for flexible we need such as uniformity and efficiency in evolution, no matter what the future brings. a production setting as required for GaN on With global reach and local presence on the SiC transistors for high power, high frequency ground we work by the side of our customers, commercial applications. In addition, it has the allowing them to quickly and cost effectively scope to provide us with a GaN on Si epiwafer seize new market and service opportunities, capability should the application require that.” while managing migration toward an all- IP Dr. Frank Schulte, Vice President of AIXTRON future. For more information, please visit www. Europe adds, “The long-standing fruitful aviatnetworks.com. scientific cooperation with the IAF will have taken another key step when the AIX 2800G4 HT is delivered later this year. The system Fraunhofer Institute orders AIXTRON will enable them to further optimize the MOCVD tool for GaN on SiC transistors performance and process technology of these 2010-03-23 devices.”
For further information on AIXTRON AG please AIXTRON AG today announced an order from consult our website at: www.aixtron.com its long-time customer, Fraunhofer Institute for Applied Solid State Physics (IAF) located in Freiburg, Germany. IAF has ordered one AIX 2800G4 HT, 11x4 inch MOCVD tool Osram produces high-efficiency LED engine which it will be using for GaN on SiC for high 2010-03-22 power, high frequency applications to enable commercialization of GaN devices in the near A new high-efficiency LED product has been future. developed by Osram.
The IAF placed its order in the fourth quarter Osram Opto Semiconductor has announced of 2009 and AIXTRON’s support team will the release of its new PrevaLED Core Light
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Engines product, which it claims is one of its exploiting a common optical platform we can most flexible and efficient products to date. satisfy our customers’ requirements for different granularities of WSS at both 50 GHz and 100 The company stated the product can be GHz spacing.” tailored to offer a range of outputs, from 800 to 3,000 lumens, while providing an efficiency of The firm is based in San Jose, California and 75 lumens per watt. specialises in the development of optical and laser components. Following the purchase of In addition, all modules have the same Newport Spectra Physics - a high-power laser dimensions - 50 mm diameter - making the diodes business - in mid-2009, the company is product ideally suited for use in downlighting now one of the largest suppliers of laser diodes and spot applications. Furthermore, the and VCSEL lasers in the world. 140-degree beam angle and easy installation of additional functions, such as dimming, make the PrevaLED system ideal for use in TriQuint Begins Producing Industry’s First illuminating office or other indoor space. 40 & 100 Gb/s SMT Amplifiers for Major Telecom Manufacturers Osram has headquarters in the US, Germany 2010-03-23 and Hong Kong and has been in operation for more than 30 years in the optoelectronic TriQuint’s Modulator Driver PAs Offer Best-in- semiconductor components industry. Class, ‘Greener’ Power Usage for 40 Gb/s & Emerging 100 Gb/s Optical Networks It was awarded the 2007 German Future Prize for its continuing innovation and commitment to TriQuint Semiconductor, a leading RF product the LED development field. manufacturer and foundry services provider, today announced that it has begun high- volume production for major optical network Oclaro releases new WSS product manufacturers of new driver amplifiers, 2010-03-22 including the market’s first surface-mount technology (SMT) 40 and 100 Gb/s (gigabits A new WSS product has been released by per second) devices. TriQuint products ease Oclaro to improve networking solutions for assembly and significantly reduce power firms. consumption for ‘greener’ wideband high-speed Oclaro has announced development of its new optical networks. XTLS 4x1 50 GHz wavelength selective switch (WSS). TriQuint’s new modulator drivers will be shown at the Optical Fiber Communication The company stated the release of this product (OFC) Conference and Exhibition (March will enable businesses to double the switching 22-25) in San Diego, CA (USA), Booth 1105. capacity of their networking systems. As a TriQuint’s TGA4943-SL driver will also be result, the product offers a cost-effective and featured in the Optical Internetworking Forum’s flexible method for improving productivity. (OIF) showcase at the 2010 OFC exhibition. TGA4943-SL, the industry’s first 40 and 100 XTLS 4x1 50 GHz WSS adds to the business’s Gb/s surface mount driver, is ‘green’ technology family of WSS products and is based on liquid in action since it operates using half the power crystal and one-axis MEMS core technologies. of other devices: just 1.7 Watts. The TGA4943- SL is also available in an adaptive module for Dr Krishna Bala, executive vice-president compatibility with legacy systems. of Oclaro’s WSS division, commented: “By
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Another new device, the TGA4826-SM, was thermal operation. TriQuint’s technology selected as a key component of the fiber leadership makes the company well suited system that powers Europe’s first 100 Gb/s link, to meet the needs of the higher value, higher which entered service in late 2009. TriQuint’s growth market demand from 10 Gb/s, 40 Gb/s new modulator driver is ideally suited for optical and 100 Gb/s networks,” concluded Mr. Anwar. network applications that need high drive combined with high linearity. The TGA4826- The need to expand high-speed fiber and SM wideband amplifier offers very low power wireless broadband capacity continues to grow consumption (dissipation) and is available in a in response to a global customer demand for standard 6x6mm package. faster, ‘always-on’ internet access supporting data-hungry smartphones and fixed access In addition to announcing production of its points, as well as wired and wireless network 40 and 100 Gb/s modulator drivers, TriQuint backhaul. TriQuint simplifies RF connectivity is ramping its new smaller, low-power for optical, point-to-point, CATV and cellular driver amplifier, TGA4956-SM, that offers base station applications through its wide enhanced performance for 10 Gb/s optical selection of product solutions that offer linearity, communications systems—a significant portion efficiency and reliability. TriQuint is working with of today’s deployed fiber networks. leading network systems manufacturers and announced an agreement with China’s Huawei “TriQuint surface-mount modulator drivers have Technologies in 2009 to work on developing proven themselves in the market,” said Brian P. faster, more efficient networks. Balut, TriQuint Vice President. “Our drivers set standards, simplify RF connectivity and break TriQuint has also grown its broadband portfolio new ground. We’re pleased to be supplying with the TriAccess line of CATV / Fiber to SMT amplifiers for the first commercial 100G the Home (FTTH) / RF over Glass (RFoG) European system.” products that enable cable systems to expand capacity and cost-effectively offer ‘triple play’ “Since entering the modulator driver market (video-voice-internet) services through existing we have shipped nearly 500,000 SMTs; our networks. new 40G and 100G products are designed for the move to higher-speed networks,” Mr. Balut Samples and evaluation boards are available added. for the TGA4826-SM, the TGA4943-SL (40 Gb/s and 100 Gb/s) and the TGA4956-SM (10 “Demand for bandwidth is maintaining the Gb/s); data sheets and S-Parameters can be momentum behind growth of higher-speed downloaded from TriQuint’s Optical Network networks, with 40 Gb/s networks expected to web pages. For Cable TV Fiber to the Home show an 80% CAGR (compound annual growth devices, visit CATV / FTTH. Contact TriQuint rate) over 2011 - 2013,” noted Asif Anwar, Product Marketing for details: info-networks@ Director, GaAs and Compound Semiconductor tqs.com. Register for TriQuint product updates Technologies Service, Strategy Analytics. “The and our newsletter at: www.triquint.com/rf. market for 100 Gb/s networks will also emerge over this timeframe and while still at an early stage, Strategy Analytics predicts a CAGR of 174% for 100 Gb/s networks over the same Avago Technologies Collaborates with IBM timeframe.” on High Bandwidth Optical Interconnect Breakthrough for Supercomputers “TriQuint is a leader in developing optical driver 2010-03-22 amplifier technology based on proven GaAs processes that offer optimal performance while Miniature Low Cost Transmitter and Receiver also reducing power dissipation and improving Provide Up to 120 Gbps Aggregate Bandwidth
196 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest and Superior Signal Integrity Avago enables improved system performance via superior signal integrity, thermal Avago Technologies, a leading supplier management and EMI design. of analog interface components for “This is an important achievement for the communications, industrial and consumer applications, today introduced the fastest, future of fiber optic technologies and high- performance computing,” said Ed Seminaro, most energy-efficient embedded interconnect IBM Fellow, Power Systems Development, IBM technology of its kind, an embedded fiber optic Systems & Technology Group. “We are pleased solution that could eventually replace copper as the optimal solution for handling high-speed that we were able to play a significant part in data rate requirements of the world’s most the definition and qualification of new optical technology that enables the processing of powerful supercomputers. enormous amounts of information in real time.” Avago’s new miniature 12-channel parallel optic Details of the new interconnect technology transmitter and receiver modules, designed in will be presented by Avago and IBM during collaboration with IBM, are capable of handling data rates up to 120 gigabits per second, a sessions at the 2010 Optical fiber Conference being held in San Diego, March 21-25 record transfer rate that is two times faster than current data rates, taking high-performance computing to an entire new level in terms of processing throughput. Such high performance Avago Technologies Eclipses Speed rates could allow further advances in such and Bandwidth Barriers with Miniature grand challenges as automobile safety, weather Embedded Parallel Optics Modules forecasting, and the discovery of new drugs 2010-03-22 and worldwide oil reserves. Receiver/Transceiver Modules Provide Up The first of these micro-parallel modules have to 150 Gbps Aggregate Bandwidth for Short- been designed specifically for IBM and will Range Data Communication and Interconnect first appear in the company’s new generation Apps POWER7 supercomputing systems. Avago Technologies , today announced it has “This achievement is the culmination of a developed one of the industry’s most compact three year collaboration between Avago and innovative low-cost, high-bandwidth and IBM,” said Philip Gadd, vice president parallel optic solution for short-range data and general manager, Fiber Optics Product and communication interconnect applications. Division, Avago Technologies. “This is all about Avago’s miniature 12-channel embedded working together closely with our clients to MicroPOD parallel optics transmitter and deliver value and marrying the expertise of two receiver modules support lane rates of up innovative companies to create and deliver to 12.5 Gbit per second for an aggregate technological advances that help differentiate bandwidth of up to 150 Gbps. These modules us in our respective markets. We are proud enable higher density interconnect solutions to have worked alongside IBM to realize this than previously possible with other embedded remarkable achievement.” or edge-mount pluggable optical or electrical The micro-parallel optics modules created for interconnect solutions. next-generation IBM POWER7 systems feature As an industry leader in delivering embedded the smallest form factors in the industry and parallel optics technologies for differentiated incorporate a highly-integrated package for solutions, Avago’s compact transmitter dense tiling of the modules in the host system. and receiver modules will pave the way The embedded optics solution provided by
April/May 2010 www.compoundsemiconductor.net 197 news digest ♦ compound semiconductor in the development of next generation – 25. supercomputers, networking switches and routers used in data centers, and in science, research and entertainment industries. Versatile design solutions are possible as the MicroPOD Ascent in deal with Kirloskar to build plant modules support data rates from 1 to 12.5Gbps in India in addition to being compliant to IBTA 12xQDR 2010-03-22
Infiniband and IEEE 802.3ba 100GBASE-SR10 U.S. photovoltaic module maker Ascent Solar specifications. Technologies Inc (ASTI.O) said it signed Historically, the dominant form factors in an agreement with Kirloskar Integrated embedded computing have been SNAP12 Technologies Ltd to sell its products and build a and POP4, with speeds up to 3.125 Gbps per module assembly plant in India. lane. Next-generation computing, switching, and routing systems will require Terabytes of Ascent said its copper indium gallium selenide interconnect between nodes. Avago’s novel (CIGS) modules will be integrated into MicroPOD modules, which have been designed products, and added that a complete backend to meet this market need, offer unprecedented module assembly plant will be established density to extend bandwidth capacity to 12.5 in India as part of the second phase of the Gbps per lane in a highly compact form factor. agreement. With dimensions of 7.8mm (L) by 8.2 mm (W) by 3.9mm (H), these modules incorporate The company also said it would expand Avago’s VCSEL and PIN array technology production in India to include complete end- and IC technologies to optimize the modules to-end module manufacturing under the final for superior electrical signal integrity and phase of the agreement with Maharashtra, optical performance. Signal integrity is further India-based Kirloskar. improved with the use of a micro LGA electrical interface to the host board. Ascent, whose thin-film modules convert sunlight into electricity, said target markets US Conec’s miniature detachable PRIZM include defense, consumer portable power, LightTurn connector developed specifically for and hybrid solar and diesel generation back-up Avago’s MicroPOD receiver and transmitter power systems. modules, provides the passive optical connection and enables the dense tiling of the modules on the host printed circuit board. The use of the PRIZM LightTurn connector in 3S PHOTONICS Announces Successful combination with US Conec’s MTP brand MPO 40Gbit/s Transmission Tests of its 1915 LMA Directly Modulated Analog Laser Module style connector provides a significant increase 2010-03-22 in card edge port density compared to serial and parallel edge-mount pluggable solutions. 3S PHOTONICS’ new 1915 LMA 1550nm This solution from US Conec enables simple, analog DFB laser module has been low cost termination that requires no polishing successfully tested at 32Gbit/s over 20km of fibers and easy testing, while providing excellent coupling to Avago’s modules. of single mode fiber without any chromatic dispersion compensation. These promising Avago will be demonstrating its innovative results confirm the expected benefits of such MicroPOD parallel optics solution at the OFC/ devices for the Next-Generation of Broadband NFOEC Conference this week at the San Diego Optical Access Networks. Convention Center (in Booth #2027) March 23
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3S PHOTONICS, world-leading French TRIQUINT BEGINS PRODUCING manufacturer of optical and optoelectronic INDUSTRY’S FIRST 40 & 100 Gb/s components for telecommunications networks, 2010-03-22 today announced the successful 32Gbit/s transmission over 20km of singlemode fiber TriQuint’s Modulator Driver PAs Offer Best-in- without dispersion compensation using an Class, ‘Greener’ Power Usage for 40 Gb/s & AMOOFDM1 modulation of its new 1915 LMA Emerging 100 Gb/s Optical Networks Series of Next-Generation directly modulated 1550nm high bandwidth analog laser module. TriQuint Semiconductor a leading RF product manufacturer and foundry services provider, This 1915 LMA prototype, presenting a 17GHz today announced that it has begun high- bandwidth and a +10dBm output power was volume production for major optical network tested by Orange Labs in Lannion (France) manufacturers of new driver amplifiers, within the EPOD2 telecom project, sponsored including the market’s first surface-mount by the French National Research Agency – technology (SMT) 40 and 100 Gb/s (gigabits ANR. per second) devices. TriQuint products ease 4 months after demonstrating a 19Gb/s assembly and significantly reduce power transmission over 25 km using Discrete Multi- consumption for ‘greener’ wideband high-speed Tone modulation (DMT), fully satisfactory optical networks. 40Gb/s back to back test and 32Gbit/s TriQuint’s new modulator drivers will be transmission over a 20km single-mode fiber shown at the Optical Fiber Communication link was experimentally demonstrated using (OFC) Conference and Exhibition (March Adaptively Modulated Optical OFDM signal 22-25) in San Diego, CA (USA), Booth 1105. (AMOOFDM) combined with a power/bit TriQuint’s TGA4943-SL driver will also be loading algorithm. The AMOOFDM signal featured in the Optical Internetworking Forum’s contains 255 subcarriers spread over 12GHz. (OIF) showcase at the 2010 OFC exhibition. Transmission was achieved without any TGA4943-SL, the industry’s first 40 and 100 chromatic dispersion compensation and using a Gb/s surface mount driver, is ‘green’ technology 35GHz bandwidth PIN-based receiver module in action since it operates using half the power for direct detection. of other devices: just 1.7 Watts. The TGA4943- These very promising experimental results SL is also available in an adaptive module for reinforce the credibility of using OFDM compatibility with legacy systems. modulation applied on a directly modulated Another new device, the TGA4826-SM, was analog laser module as a key contributor selected as a key component of the fiber to design the Next-Generation of low cost system that powers Europe’s first 100 Gb/s link, broadband optical access networks. which entered service in late 2009. TriQuint’s new modulator driver is ideally suited for optical network applications that need high drive combined with high linearity. The TGA4826- SM wideband amplifier offers very low power consumption (dissipation) and is available in a standard 6x6mm package.
In addition to announcing production of its 40 and 100 Gb/s modulator drivers, TriQuint is ramping its new smaller, low-power driver amplifier, TGA4956-SM, that offers
April/May 2010 www.compoundsemiconductor.net 199 news digest ♦ compound semiconductor enhanced performance for 10 Gb/s optical selection of product solutions that offer linearity, communications systems—a significant portion efficiency and reliability. TriQuint is working of today’s deployed fiber networks. with leading network systems manufacturers and announced an agreement with China’s “TriQuint surface-mount modulator drivers have Huawei Technologies in 2009 to work on proven themselves in the market,” said Brian P. developing faster, more efficient networks. Balut, TriQuint Vice President. “Our drivers set standards, simplify RF connectivity and break TriQuint has also grown its broadband portfolio new ground. We’re pleased to be supplying with the TriAccess™ line of CATV / Fiber to SMT amplifiers for the first commercial 100G the Home (FTTH) / RF over Glass (RFoG) European system.” products that enable cable systems to expand capacity and cost-effectively offer ‘triple play’ “Since entering the modulator driver market (video-voice-internet) services through existing we have shipped nearly 500,000 SMTs; our networks. new 40G and 100G products are designed for the move to higher-speed networks,” Mr. Balut Samples and evaluation boards are available added. for the TGA4826-SM, the TGA4943-SL (40 Gb/s and 100 Gb/s) and the TGA4956-SM (10 “Demand for bandwidth is maintaining the Gb/s); data sheets and S-Parameters can be momentum behind growth of higher-speed downloaded from TriQuint’s Optical Network networks, with 40 Gb/s networks expected to web pages. For Cable TV Fiber to the Home show an 80% CAGR (compound annual growth devices, visit CATV / FTTH. Contact TriQuint rate) over 2011 - 2013,” noted Asif Anwar, Product Marketing for details: info-networks@ Director, GaAs and Compound Semiconductor tqs.com. Register for TriQuint product updates Technologies Service, Strategy Analytics. “The and our newsletter at: www.triquint.com/rf. market for 100 Gb/s networks will also emerge over this timeframe and while still at an early stage, Strategy Analytics predicts a CAGR of 174% for 100 Gb/s networks over the same LN2 Auto Changeover Upgrade to Oxford timeframe.” Instruments Cryo Tables 2010-03-22
“TriQuint is a leader in developing optical driver As a leader in systems and processes for etch, amplifier technology based on proven GaAs deposition and growth, Oxford Instruments processes that offer optimal performance while Plasma Technology (OIPT) is continuously also reducing power dissipation and improving designing upgrades for its systems, processes thermal operation. TriQuint’s technology and software as new techniques are developed. leadership makes the company well suited In this way the company can offer greater to meet the needs of the higher value, higher efficiencies and cost savings to its customers. growth market demand from 10 Gb/s, 40 Gb/s and 100 Gb/s networks,” concluded Mr. Anwar.
The need to expand high-speed fiber and wireless broadband capacity continues to grow in response to a global customer demand for faster, ‘always-on’ internet access supporting data-hungry smartphones and fixed access points, as well as wired and wireless network backhaul. TriQuint simplifies RF connectivity for optical, point-to-point, CATV and cellular base station applications through its wide The Liquid Nitrogen (LN2) Auto Changeover
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Unit (ACU) is one such cost and time saving generation enhancements simply through the development, enabling table cooling fluid substitution of a few standard components.” to be automatically switched between LN2 and Chiller Fluid, via a recirculating chiller. The company specialises in the provision of Impressive time savings mean that when using compound semiconductor and fibre optics the ACU, cool down time from 200ºC to 20ºC products predominantly for the solar energy is cut to 40 minutes (including switching from market. Cryo to Chiller mode) compared to the natural cool down time of 10 to 12 hours. It also works to deliver a range of other components, however, including satellite OIPT’s Liquid Nitrogen (LN2) ACU gives and microwave fibre links, laser and receiver accelerated cooling in temperature range chips, datacom transceivers, video, audio and 200 °C to 0 °C, and saves time when rapid data transport equipment and a host of other mode change is required. The Unmanned/ products. Overnight mode change gives time for the table temperature to stabilise, ready for process at the beginning of the next day. With a setpoint 3S PHOTONICS Accelerates the Green range of between -150ºC to +400ºC and Revolution more efficient use of LN2, this fully automated 2010-03-19 upgrade will save users time and money. 3S PHOTONICS, a world-leading French All new or existing Oxford Instruments’ systems manufacturer of optical and optoelectronic with a Cryo Table or RIE heated electrode are components is accelerating the release of compatible with the LN2 Auto Changeover Unit. its complete range of high efficiency pump lasers, at the Optical Fiber Communication Conference/National Fiber Optics Engineers Tunable laser technology released by Conference (OFC/NFOEC) and Exhibition from Emcore March 23-25 in San Diego, USA 2010-03-19
Compound semiconductor product developer Emcore has announced the creation of a new tunable laser system.
Emcore has announced the release of its new micro-integrable tunable laser assembly which has been designed to meet the needs of 40 to 100 gigabits per second line-cards and The need for optical amplification is increasing transponders. in next generation optical networks. Metro or
core amplification of D-WDM signals is a major The product delivers all the functionality of full- contributor to overall power consumption in sized models including narrow linewidth, low today’s optical networks. The evolving need noise, frequency fine tuning and high output for amplification of single channels in FTTx power, but at just a quarter of the size. and high speed 40 or 100Gb/s transponder applications using conventional pumping has Rob Stone, marketing director of Emcore’s a significant and detrimental effect on systems’ fibre optics division, said: “The modularity and power consumption, reliability and cost. The flexibility of our technology platform enables latest evolution of the class-leading pump laser a wide array of product variants and next- portfolio from 3S PHOTONICS is designed
April/May 2010 www.compoundsemiconductor.net 201 news digest ♦ compound semiconductor to minimize power consumption, cost and The whole range of 3S PHOTONICS’ pump reliability concerns. lasers have been designed to be easily integrated into both old and new amplifier platforms with The need for absolute reliability using minimum re-engineering required. commercially available chips requires significant “If you look at the growing demand for cooling of the chip to be provided. The resulting sustainable energy usage and continuous cost power demands and heat dissipation have a reduction pressures in all industry sectors, major impact on the design, operation and cost power consumption reductions up to 80% will of optical amplification systems. Utilizing in- help contribute to the Green Revolution that house “state of the art” laser chips and class- is required in the telecom sector” said Yannick leading alignment technology, 3S PHOTONICS Bailly, Vice-President of Marketing and Product offers the most efficient range of pump laser Lines Management at 3S PHOTONICS. “In modules on the market today. addition, the significant Capex and Opex reductions demonstrate a true “win-win” for both Whether it is EDFA or Raman amplification, the the environment and business. class-leading reliability of the 3S PHOTONICS About 3S PHOTONICS pump laser chips enables either very high optical output or significantly reduced cooling, 3S PHOTONICS – formerly Alcatel Optronics whichever is the design priority. The ultimate – is the leading world manufacturer of laser result is the lowest initial and operating cost/Bit chips, optical discrete modules and components of transmitted data. for undersea telecommunication networks. It designs, develops, manufactures and The complete product range includes commercializes active components powered by conventionally cooled, 45°C cooled or un-cooled in-house III-V optoelectronic chips based on both pump laser modules. The 1999 HPM and 1999 Gallium Arsenide (GaAs) and Indium Phosphide CHP Series are conventionally cooled devices (InP) technologies and passive components with operating power up to 430 and 720mW using Fiber Bragg Gratings (FBG). respectively. These versions use up to 20% less power compared to competing solutions and are The 3S PHOTONICS renowned optoelectronic a straightforward drop-in replacement. The 1999 chip manufacturing plant of Nozay is a HEP is a 45°C cooled product with operating technological feat that is unique in the world as power up to 450mW which requires up to 50% it brings together GaAs and InP technologies less power to operate. For the greatest savings under the same roof. of all, the 1999 HPU provides operating power up 400mW and an 80% reduction in power Its product portfolio includes five product lines: consumption. * Transmission Laser and Detector Modules These savings have been achieved through * Pump Laser Modules for terrestrial and the incorporation of the submarine qualified submarine applications 1999 LCv2 laser chip which is produced at the * Chromatic Dispersion Compensation Modules 3S PHOTONICS facility in Nozay, France. With * Filters, gain equalizers and pump stabilizers a hermetically sealed, 14-pin Butterfly or Mini- based on Fiber Bragg Gratings for terrestrial and DIL package, and Fiber Bragg Grating (FBG) submarine applications stabilization integrated into the fibre pigtail, all * Chips (lasers and detectors) and Front End products provide stable performance over a Services wide dynamic range. All modules are qualified to Telcordia GR-468-CORE and provide the lowest failure in time (FIT) rates in the industry.
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Fujitsu Introduces Advanced 40 Gbps supports network sizes of up to 1200 km, up to Coherent Optics 24 add/drop nodes per network, and a capacity 2010-03-19 of up to 1.6 Tbps.
Industry-Leading FLASHWAVE® 7500 ROADM The new 40 Gbps coherent interfaces for the Platform Enhanced with Latest High-Bandwidth FLASHWAVE 7500 ROADM include individual Transmission Technology transponder, muxponder, and regenerator units. Combining advanced coherent detection Fujitsu, a leading provider of business, technology with dual polarization quadrature information technology, and communications phase shift keying (DP-QPSK) modulation, solutions, announced today the addition of these new units enable enhanced performance third generation 40 Gbps optical interfaces on ultra-high speed 40 Gbps wavelength to its industry leading FLASHWAVE® 7500 division multiplexing (WDM) networks. Reconfigurable Optical Add/Drop Multiplexer (ROADM) platform. “Fujitsu has been the leader in optical communications patents for four consecutive Coherent receivers offer many advantages, years thanks to our sizeable investment in including improved optical performance, which core optical R&D,” said Bill Erickson, senior allows for larger geographic networks with vice president of planning and development longer optical spans. Utilizing all-electronic at Fujitsu Network Communications. “We first compensation, coherent optics eliminate the introduced 40 Gbps interfaces in 2007 and need for dispersion compensation modules and with the introduction of these third generation improve operational flexibility. units, Fujitsu continues to back up our R&D investment with commercially available product “The market for 40G transport gear surpassed innovations that significantly advance high- $500 million in 2009 as carriers around the speed optical networking options.” globe embraced the technology,” said Ron Kline, principal analyst of network infrastructure The second generation 40 Gbps interface at Ovum. “The latest Fujitsu 40G products cards, which are based on Adaptive Differential respond to evolving and growing market needs Phase Shift Keying (ADPSK) modulation, are for systems with higher tolerance to dispersion still available and will continue to be offered while at the same time shortening the 100G and supported for applications that do not developmental cycle. We expect the market for require the enhanced DP-QPSK / coherent 40G to double this year and exceed $3 billion performance. by 2014.”
The market-leading FLASHWAVE 7500 ROADM is a complete optical hubbing and EMCORE Corporation Announces transport solution widely deployed in traditional Expansion of ClearLightTM Tunable Laser telecom carrier and cable operator networks Technology Platform With New micro-ITLA to support core network consolidation, metro/ 2010-03-19 regional capacity relief, and triple-play service delivery. Globally deployed in North EMCORE Corporation (NASDAQ: EMKR), a America, Europe, and Asia, the FLASHWAVE leading provider of compound semiconductor- 7500 platform is available in ANSI and ETSI based components and subsystems for the configurations. Network topology support fiber optic and solar power markets, today spans from simple two-degree (2D) ROADM announced the expansion of its Telecom ring networks to advanced 12-degree optical DWDM product portfolio empowered by the hubbing/mesh applications. The system ClearLight™ proprietary tunable external-
April/May 2010 www.compoundsemiconductor.net 203 news digest ♦ compound semiconductor cavity laser (ECL) technology platform, with the emcore.com. introduction of the new micro-ITLA (Integrable Tunable Laser Assembly).
EMCORE’s micro-ITLA is specifically designed EMCORE Releases High-Power, Ultra-Low to meet the needs of 40 and 100 Gb/s (gigabits RIN DWDM Laser Modules per second) line-cards and transponders. Its 2010-03-19 features include narrow linewidth, low noise, EMCORE Corporation (NASDAQ: EMKR), a frequency fine tune and high output power, while providing the full functionality of the ITLA leading provider of compound semiconductor- multi-source agreement (MSA) in a quarter- based components and subsystems for size form factor and with half the power the broadband, fiber optic, satellite and consumption. This next step in product density terrestrial solar power markets, announced is made possible by EMCORE’s ClearLight™ the introduction and immediate availability of a technology which builds upon several new line of high-power, > 100 milliwatt (mW), generations of EMCORE’s industry-leading continuous-wave (CW) source laser modules tunable products, having over 500 million for 1550-nm range DWDM applications. total field hours. Heino Bukkems, Product Line Manager for the micro-ITLA, stated, “The The DWDM 100-mW high-power CW laser EMCORE ECL laser has always been the module, available in all ITU grid wavelengths, device of choice for next-generation 40 and offers solutions for growing demands of high 100 Gb/s systems. The size-reduced micro- optical power in DWDM, CATV networks, ITLA enables the emergence of smaller 40 and free space optics applications. The and 100 Gb/s transponders. Our experienced laser module is DC-coupled with a built-in engineering team and a deep understanding TEC, thermistor, and monitor photodiode. of our core technology have made this highly The device is mounted in a 14-pin, OC-48 differentiated product possible.” pinout compatible butterfly package with the The new micro-ITLA is the third product optical isolator mounted on the TEC. It also empowered by EMCORE’s ClearLight™ incorporates an innovative, high efficiency technology, joining the tunable TOSA and coupling scheme to deliver more than 100- tunable XFP products announced last year. mW CW optical power at a low bias current. Rob Stone, Marketing Director of EMCORE’s Features of these laser modules, model Fiber Optics Division, stated, “The modularity number 1782, include: and flexibility of our technology platform · Operating temperature ranges from -20°C to enables a wide array of product variants and +65°C next generation enhancements simply through · Ultra low RIN (relative intensity noise) is the substitution of a few standard components. typically less than -170 dB/Hz We can then integrate our ClearLight™ optical · Optical power output is greater than 100 mW engines at different levels, all the way from · Maximum laser bias current is 450 mA TOSA and laser assemblies, to transceivers and transponders to meet the specific needs of our customers.” “The ultra low RIN and high optical power makes this product family an excellent choice EMCORE will be conducting demonstrations to design into externally modulated transmitters of the new micro-ITLA at the Optical Fiber that require high optical power or dual optical Communication Conference and Exposition power outputs for RFoG and FTTx networks,” (OFC) in San Diego on March 23-25 2010. said Vu Tran, Optical Component Product Line Manager for EMCORE Broadband. The laser For more information, visit EMCORE at www. modules are immediately available. Please visit
204 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest our booth at the Optical Fiber Communication from cell phones, to WiFi, to Radar, to Satellite Conference and Exposition (OFC) in San Diego and Military communications,” adds Shaw. on March 23-25, 2010, for more information. “And these systems are not only available, but installed and providing a capability for our customers to find and improve the reliability and performance degradation of their products.” Accel-RF announces shipment of its first millimeter-wave reliability & performance About Accel-RF characterization test system. 2010-03-18 Accel-RF Corporation is a closely-held private corporation located in San Diego, California. Accel-RF Corporation announces the The company specializes in the development, shipment and successful installation of its first design, and production of accelerated life-test/ millimeter-wave reliability and performance burn-in test systems for RF semiconductor characterization test system. The turn-key devices. These systems are turn-key integrated system independently performs RF life- instruments that provide a cost-effective and tests and accelerated-aging performance high-value proposition for manufacturers, characterization tests on 8 to 16 devices fabless designers, testing-service providers, simultaneously. The system stresses original equipment manufacturers, components with elevated temperature; fixed, system integrators, and research and pulsed, or stepped DC bias; and elevated CW development laboratories requiring intrinsic or pulsed millimeter-wave power to frequencies reliability identification, process-control beyond 77 GHz. validation, specification standard-deviation “Accel-RF now has RF Reliability systems characterization, and product qualification testing. for applications ranging from cell phones, to WiFi, to Radar, to Satellite and Military communications” Plasma-Therm Joins the Fab Owners
Association This is another significant addition to theAccel- 2010-03-18 RF family of RF reliability and performance characterization test systems. “Accel-RF Plasma-Therm, a global supplier of plasma introduced a High Power System to test process equipment, is pleased to announce it application-specific GaN power devices and has recently joined the Fab Owners Association MMICs last year. Now our new millimeter-wave (FOA). systems significantly broaden the capability to perform RF characterization and aging effects Through quarterly meetings, FOA members on new compound semiconductor as well as work collaboratively to discuss problems and traditional device technologies,” says Roland provide solutions on issues relevant to the Shaw, President and Founder of Accel-RF semiconductor manufacturing industry. Corporation. “Members like Plasma-Therm are extremely Accel-RF designs, manufactures and sells important to our trade association: They reliability test equipment to compound bring tomorrow’s solutions to our device semiconductor manufacturers, military maker members today,” said L.T. Guttadauro, component manufacturers, defense Executive Director of the Fab Owners contractors, and the tri-services wide-bandgap Association. “We are happy to have Plasma- component teams. “Accel-RF now has RF Therm as one of our newest members.” Reliability systems for applications ranging
April/May 2010 www.compoundsemiconductor.net 205 news digest ♦ compound semiconductor
Through active membership participation, Dr. Krishna Bala, Executive Vice President Plasma-Therm will provide industry insight of of Oclaro’s WSS Division. “By exploiting common practices and solutions to problems a common optical platform we can satisfy in dry etch and PECVD technologies. “The Fab our customers’ requirements for different Owners Association gives key industry players granularities of WSS at both 50 GHz and 100 a valuable forum to discuss relevant issues and GHz spacing.” share solutions that will benefit technological advancement in many different markets,” said About the XTLS 4x1 50 GHz WSS Abdul Lateef, CEO of Plasma-Therm. The new family of XTLS 4x1 50 GHz Plasma-Therm, founded in 1974, is a supplier Wavelength Selective Switches are the latest of advanced plasma process equipment that addition to Oclaro’s complete portfolio of 50 caters to various specialty markets including GHz spacing WSS module products. These photomask, solid state lighting, thin film head products further enhance Oclaro’s ability to and compound semiconductor. Plasma-Therm support high speed optical signals cascading offers both dry etch & PECVD technologies. To through multiple ROADM nodes. The modules meet the diverse needs of our global customer are based on Oclaro’s field proven optical base, Plasma-Therm has sales, service and platform with over 50 million device hours of spares locations throughout North America, network deployment. These new WSS show Europe and Asia-Pacific. Oclaro’s commitment to the industry’s shift to 50 GHz spacing for higher traffic carrying Founded in 2004, the Fab Owners Association density. (FOA) is an international, non-profit, mutual benefit corporation composed of semiconductor Oclaro offers a family of scalable, high and MEMS manufacturers, along with our performance WSS modules based on the industry suppliers. combination of liquid crystal and one-axis MEMS core technologies. Oclaro WSS modules are available as standalone devices Oclaro Announces Family of 50 GHz and also as complete solutions integrated with Spacing Wavelength Selective Switches amplifiers and channel monitors on ROADM 2010-03-18 blades.
Oclaro, Inc., a provider of optical components, SOURCE Oclaro, Inc. modules and subsystems to the telecom industry, today announced the addition of an XTLS 4x1 50 GHz Wavelength Selective Switch FIRECOMMS LICENSES OPTOLOCK (WSS). PLUGLESS INTERCONNECT DESIGN TO SUTTLE FOR NEW POF WALL PLATE This new WSS module complements Oclaro’s PRODUCT existing 2x1 and 9x1 50 GHz WSS family to fit 2010-03-18 a broadening spectrum of ROADM applications. By employing 50 GHz, WSS customers are Firecomms, a leading developer of high-speed able to double the switching capacity of their Plastic Optical Fiber (POF) transceivers , networking systems in a flexible and cost announces that it has licensed its OptoLock effective manner. interconnect system to Suttle , a leading supplier of communication connectivity “We are seeing an increased demand for 50 products for the telecom and datacom GHz spacing WSS products to support higher industries worldwide. capacity optical networking systems,” said
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OptoLock, an easy-to-use, low-cost housing photonics, today announced successful for instant termination of bare Plastic Optical demonstration of their Echelle grating Mux Fiber (POF), provides plugless terminations and Demux for 500 Gb/s wavelength division that allow for simpler, quicker connections of multiplexing applications. The ½ Terabit-per- communications and infotainment network second demonstration, in partnership with devices. CyOptics, marks the successful completion of the second year milestone as part of a three- “Suttle is excited to offer the first commercially year program called Terabit Photonic Integrated available POF to POF passive OptoLock wall Circuits (TERAPICS). plate adapter system, which we’ve added to our SpeedStar line of modular connectivity,” says The 12 channel Mux and Demux chips, Bill Heuer, senior product manager. “Firecomms designed and fabricated by Kotura, directly has pioneered the development of POF as a couple light from laser arrays and detectors into low-cost alternative for copper cabling in home a single fiber, greatly simplifying the packaging, networking, which we look forward to support.” and eliminating the costly need for dozens of lens, isolators, laser monitors and Thermo- “With the rapid adoption of OptoLock by an Electric Coolers (TECs). increasing number of equipment providers, we are pleased to license our technology to “While much of the industry is developing 40 Suttle, a well established telecom vendor that and 100 Gb/s Ethernet solutions, the next has been supplying communication equipment major step will be 500 Gb/s and one Terabit,” to companies worldwide since 1910, ” says explains Arlon Martin, Vice President of Lawrence Thorne, Firecomms’ vice president Marketing at Kotura. “Server blades with multi- of sales and marketing, the Americas. “Suttle, core CPUs and 10 Gb/s I/O ports are becoming like all suppliers of OptoLock products, will more common, accelerating the need for higher manufacture its product based on a common speeds in the core of the data center.” mechanical specification for the fiber interface.” “Kotura has designed a large variety of WDM Suttle’s new SpeedStar OptoLock wall plate chips with small footprint, low cross-talk adapter system will be available in Q2 2010. and low PDL,” added Mehdi Asghari, CTO of Kotura. “We have successfully fabricated Due to its ease of use, large core tolerances, designs from 4 to 40 channels, supporting and low costs, POF is enjoying substantial wavelengths from 1200 to 1600 nm and growth in home network and point-to-point channel spacings from 20 nm to 100 GHz. interconnection. The annual worldwide POF The ATP-CyOptics chips contain hybridization market is estimated to be worth over $2.5 features for the laser arrays, a Gaussian filter billion in 2011, according to market research by on the laser side, and a flat-top filter on the Information Gatekeepers. detector side.”
The 500 Gb/s demonstration was performed Kotura Announces Industry’s First Silicon at CyOptics, Kotura’s partner in the ATP NIST Photonics Mux/DeMux for ½ Terabit/s program. Transmission 2010-03-18 Brian Kingston Joins RASIRC to Manage ATP/NIST Award Milestone Sets New Record North America Sales for Photonic Integration 2010-03-17
Kotura Inc., an industry leader in silicon RASIRC, the steam purification company,
April/May 2010 www.compoundsemiconductor.net 207 news digest ♦ compound semiconductor announced today that Brian Kingston has RASIRC products purify and deliver ultra pure joined its team as North American sales liquids and gases. RASIRC technology is manager. Mr. Kingston brings over a dozen the first to generate ultra high purity (UHP) years of semiconductor and solar industry steam from de-ionized water. It reduces cost, business experience, most recently as a increases yield, and improves safety. RASIRC business manager of abatement at Applied dryers, humidifiers, and steam generators are Materials. He will be responsible for sales of critical importance for many applications in of RASIRC products and services for the semiconductor, pharmaceutical, medical, semiconductor, MEMS, nanotechnology, biological, fuel cell, and power industries. photovoltaics and other manufacturing Custom systems are available upon request. applications. Call 858-259-1220, e-mail [email protected], or visit www.rasirc.com. “RASIRC products have the potential to dramatically improve manufacturing processes in the microelectronics market,” said new High-Temperature Fast Driver for Power sales manager Brian Kingston. “I joined this Transistors innovative company to be part of the team 2010-03-17 that brings these products to market, and to develop the world class support network that its CISSOID Introduces PROMETHEUS-II. A High- customers’ demand.” Temperature Fast Driver for Power Transistors In Motor Drives, Inverters and SMPS Mr. Kingston holds a B.S. degree in business management and an MBA in marketing. He CISSOID, a leader in high temperature also studied telecommunication engineering semiconductor solutions, released at Christchurch Polytechnic, New Zealand. PROMETHEUS-II, a fast High Temperature Prior to Applied Materials, Mr. Kingston Power Transistor Driver reference design was product marketing manager for ATMI suitable for operation from -55°C up to +225°C. and North American regional manager for PROMETHEUS-II brings the solution to drive Delatech, where he managed a distributed Silicon-Carbide (SiC), GaN and other Power staff of engineers. In addition to building a first Devices such as MOSFET’s, IGBT, JFET and class sales organization, Brian will be directly BJT in highly demanding applications requiring responsible for setting up the new distribution reliable and continuous operation up to 225°C. channel featuring Matheson Tri-Gas in the United States. PROMETHEUS-II is the next product in Cissoid’s family of TITAN power drivers, “Brian’s strong background in the which the company is going to further expand semiconductor equipment subsystem segment in the future. It is a reference design based as well as his previous success in customer on the recently introduced high temperature relationship building fits well with our focus half-bridge driver CHT-HYPERION. All active on delivering innovative technology to the components of the bill-of-material are high microelectronics market,” said RASIRC founder temperature proven products from Cissoid, and president Jeffrey Spiegelman. “As our ensuring reliable operation at extreme products move from R&D to production, it is temperatures. critical that our customer supportalso matures. Our customers will benefit from his passion for Compared to the earlier version, customer care and knowledge of the processes PROMETHEUS-II brings greater sink/source they manage.” current capability, shorter delays and faster rise and fall times. The current capability depends About RASIRC on the MOSFETs used in the output push-pull
208 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest stage. As an example, the CHT-NMOS4005 chips, or in high temperature environments, is able to sink up to 6A at 25°C in switching CISSOID products enable energy, weight mode. For applications requiring higher current and cost savings in lighter, cooling-free and capabilities, the CHT-NMOS4010 (for 12A at more compact electronic systems. They are 25°C) or CHT-NMOS4020 (for 22A at 25°C) used in mission-critical systems as well as can be used. in applications requiring long term reliability. CISSOID supplies leaders in the Oil&Gas, PROMETHEUS-II is meant to be used with Aeronautics, Industrial and Automotive markets. high voltage, high power devices in DC or AC Motor Drives, Switched Mode Power Supplies (SMPS) and any other power Xenics to target high-end thermography conversion application within high temperature 2010-03-17 environment or whenever system designers want to skip expensive cooling. Aeronautics Xenics to extend its range of high-volume (fly-by-wire), Train, Automotive (electric and security and high-end thermography products. hybrid vehicle), Industrial and Oil & Gas are amongst the target markets. Imaging solutions and infrared detection developer Xenics has announced it will extend The application note for PROMETHEUS-II its product portfolio to target the high-volume is available upon request. It includes detailed security and high-end thermography markets. instructions to build a Power Transistors Driver, a reference design with its bill-of-material and The firm plans to showcase a number of its schematic as well as detailed implementation new devices in the infrared (IR) imaging and for each chip of the BOM. Depending on thermography markets at this year’s Defense, specific customer needs, PROMETHEUS-II can Security and Sensing conference which is be implemented with packaged components taking place in Orlando, Florida between April on a high-temperature Printed Circuit Board, 5th and 9th, including its Meerkat, Xlin, Onca, or within a Multi-Chip-Module on the basis of Bobcat, Gobi and Cheetah ranges. bare dice. All active components are available immediately from Cissoid. A demonstration “We are broadening our product portfolio, as board can be ordered separately. For more well as our strategic presence in new markets, information, visit www.cissoid.com or contact changing from a mainly technology-driven to the company’s representatives at www.cissoid. a fully market-driven approach,” commented com/company/about-.... Xenics founder and chief executive officer Bob Grietens. About Cissoid - www.cissoid.com The company claimed its indium gallium CISSOID is the leader in high temperature arsenide devices will revolutionise global semiconductor solutions, delivering standard markets in short-wave infrared spectroscopy, products and custom solutions for power imaging and non-contact temperature management, power conversion and signal measurement. conditioning in extreme temperature and harsh environments. CISSOID provides high reliability Xenics’ products are aimed at the most active products guaranteed from -55°C to +225°C range of IR from one to 14 micrometers and and commonly used outside that range, from have applications in commercial, industrial, cryogenic lows to upper extremes. medical, security-related and scientific fields.
Whether the ambient temperature is low but the power dissipation heats up the
April/May 2010 www.compoundsemiconductor.net 209 news digest ♦ compound semiconductor
Oclaro Announces Qualified 40-Gigabit RZ- By choosing the RZ-DQPSK format combined DQPSK Transponder with Oclaro’s expert utilization of Indium 2010-03-17 Phosphide technology, Oclaro is able to set a new standard in performance, features and cost Oclaro, Inc., a provider of optical components, for 40G transponders. Oclaro’s customers are modules and subsystems to the telecom able to exploit the power of vertical integration industry, today announced it’s first 40G RZ- which allows differentiation of features at the DQPSK Indium Phosphide based transponder chip level and drives cost disruption. qualified to Telcordia standards.
Delivering high-performance in a low-cost, 300 MSi Employs PowerPSoC Controller from pin Multi-Source Agreement (MSA) platform, Cypress in Revolutionary New Intelligent the new TL9040 transponder modules are LED Replacement Bulb currently shipping to tier-one customers for next 2010-03-17 generation field deployments. LED Technology Leader Uses PowerPSoC “Our new 40G transponders demonstrate Programmability for Variable Power, Oclaro’s commitment to continually increase Communications and Compatibility with the bandwidth and functionality of the network Installed Dimming Systems while reducing costs to the end-user,” said Paul Johnson, 40G Modules Product Line Cypress Semiconductor Corp. today Manager at Oclaro. “By incorporating our announced that its PowerPSoC embedded highly-successful Indium Phosphide technology power controller is an integral part of the into an Industry MSA footprint, we have been revolutionary new iPAR-38 LED replacement able to achieve substantial cost reductions bulb from MSi. The new bulb leverages and, at the same time, increase the overall PowerPSoC’s programmability and flexibility performance of the system.” to deliver unique features including adjustable About the TL9040 Transponder Module power levels, communications capability, and the ability to be dimmed through the use of Oclaro’s new multi-rate adaptable 43Gbps virtually any installed dimming system. RZ-DQPSK transponder is a long reach, 300- pin transponder module suitable for wideband The MSi iPAR-38 is UL and CSA certified, tunable, C-band applications requiring -150ps/ and is available in 2700K or 3000K in 10 nm to +150ps/nm dispersion tolerance in noise degree spot, 16 degree hybrid or 22.5 degree loaded link applications, offering a significant flood configurations. Its unique Powerband™ OSNR improvement over legacy DPSK technology enables adjustable power levels systems designed around a 50GHz channel from 10 to 12 to 16 watts – depending on the spacing. need for additional light or additional energy savings. The new 40G transponders are the latest addition to Oclaro’s complete portfolio of The iPAR-38 LED bulb has been designed with products that power the metro / regional a universal voltage power supply of 85 volts to infrastructure of the network. To ensure the 265 volts, allowing it to be installed in virtually highest level of reliability, the Oclaro 40G any country in the world. In addition, MSi’s transponders have undergone rigorous testing Proprietary Intelligent Communication system to Telcordia standards, including 2000 hours allows the bulb to communicate information of active endurance, damp heat, temperature such as manufacturing and installation cycling, and shock and vibration testing. information, the number of hours it has been in use, and wattage settings to a handheld remote
210 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest device through a sophisticated electronic light Base Stations, Satellite TV, and Set-Top Boxes wave pattern. This is especially important due to the extremely long bulb life, but also can Avago Technologies a leading supplier play a key role in overall energy evaluation, of analog interface components for maintenance and design. communications, industrial and consumer applications, today announced two new The PowerPSoC family integrates from economical, easy to use general purpose one to four constant-current regulators and InGaP Hetero-Junction Bipolar Transistor (HBT) 32V/1A MOSFETs with Cypress’s PSoC MMIC gain block amplifiers for use in a variety programmable system-on-chip, which includes of wireless applications. a microcontroller, programmable analog and digital blocks, and memory. Avago’s AVT-51663/53663 gain blocks, which This unprecedented level of integration operate within the DC to 6000MHz frequency provides customers with a single-chip solution band, can be used as either a broadband gain for high-quality LED-based lighting products block or driver amplifier. These gain blocks and other embedded applications such as white target designers of cellular infrastructure goods and industrial control. The result is end applications, but can be also be used in a systems with fewer components, faster design variety of other wireless applications such as cycles, lower power consumption and higher Base Stations, WiMAX, WLAN, CATV, Satellite reliability. More information on the PowerPSoC TV and set-top boxes. family is available at www.cypress.com/go/pr/
PowerPSoC.
“We are delighted to add value to this amazing product using PowerPSoC’s programmability and flexibility,” said Brian Moody, director of marketing for Cypress’s PowerPSoC Business Unit. “The iPAR-38 is a tremendous showcase for the many benefits that PowerPSoC can bring to LED systems.”
“We clearly could not have delivered this unprecedented level of customer configurability without the PowerPSoC functionality,” said John Burke, vice president of Sales and Marketing for MSi.
“This product is unique in the industry and customers are raving about the possibilities Avago’s AVT-51663/53663 gain block they see in putting it to use.” amplifiers, which are internally matched to 50-Ohms, were designed in Darlington configuration housed in an industry Avago Technologies Announces New High standard six-lead SOT-363 surface mount Performance Broad Band InGaP HBT Gain plastic package. The Darlington feedback Blocks structure provides inherent broad bandwidth 2010-03-17 performance resulting in a useful operating frequency range of up to 6 GHz making the Economical, Easy to Use InGaP HBT Gain AVT-51663/53663 ideal for small-signal gain Block Amplifiers Ideal for WiMAX, Wireless cascades or IF amplification. Moreover, these
April/May 2010 www.compoundsemiconductor.net 211 news digest ♦ compound semiconductor new gain blocks feature easy installation deposition system from the Eidgenössische and only require DC blocking capacitors, RF Materialprüfungsund Forschungsanstalt choke, biasing resistors and bypass capacitors (EMPA), Switzerland. The order was received for operation. Additionally, no additional RF in the third quarter 2009 and the system will be matching components are required to achieve delivered in the first quarter 2010 with the 1x2 broadband performance. inch wafer configuration.
These new gain block amplifiers were Dr. Stefan Egger comments: “We were looking developed using advanced InGaP HBT for a flexible system that could give us the technology that offers state-of-the-art means to reliably synthesize a range of reliability, temperature stability and consistent different types of carbon nanomaterials. performance. At a typical operating condition of 5V and 37mA, the AVT-51663 delivers Furthermore, it was essential that it is easy performance of 19.0dB gain, 24dBm to operate and reliable with good efficiency. Output Third Order Intercept Point (OIP3) Overall, the AIXTRON Black Magic system and 12.5dBm Output Power at 1dB Gain ticks all the boxes and seems to be an ideal Compression (P1dBm) and 3.2dBm noise match to our requirements.” figure at 2000MHz. The AVT-53663 operates at 5V and 48mA to deliver a performance of EMPA, the interdisciplinary research and 19.5dB Gain, 5dBm OIP3, 15dBm P1dB and services institution for material sciences and 3.2dB noise figure at 2000MHz. technology development, will employ the new system to produce several different nanocarbon Key Features materials. “These applications require a system - Small signal gain amplifier with great flexibility, which can easily be used - 50 Ohm input and output by different researchers from several research - Broadband high linearity groups,” adds Dr. Egger. “These are needed for - No RF matching components required very different topics such as miniaturized X-ray - Flat broadband frequency response up to sources which demand MWCNT field emitters. 2GHz It will also be used to create single- and double-
- Single, fixed 5V supply walled CNTs and graphene for sensors and - Industry standard SOT-363 package other devices as well as composite materials - Lead-free and RoHS compliant incorporating carbon nanotubes and fibers.”
Availability
Avago’s AVT-51663 and AVT-53663 broadband high linearity gain blocks are available now. LED Processing with lasers 2010-03-17 More information about Avago Technologies’ wireless products can be found at: www. LEDs are expected to develop to one of the avagotechwireless.com. predominant light sources over the coming decades.
EMPA orders AIXTRON 2-inch Black Magic However, the pace of development differs tool for miniaturized X-ray sources and depending on specific requirements and sensors constraints. One of the most promising markets 2010-03-17 today is the display backlight technology. Experts forecast quadrupling of the number AIXTRON AG today announced an order for of LCD displays with LED backlighting in one Black Magic CNT (carbon nanotube) 2010 superseding conventional cold cathode
212 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest fluorescent lamps (CCFL). Laser marking is an essential step in manufacturing the required LEDs.
Reliable High-speed Marking with Real-Time Compensation of Position Tolerances There are currently two main ways to use LED backlighting in LCD flat panel televisions: LED edge-lighting and full array LED backlighting. The latter places about hundred backlight segments behind the entire screen allowing for local dimming and a significant increase in contrast range. Each segment consists of hundreds of minuscule LEDs. As each LCD High-power LED production usually requires display requires a huge number of LEDs, their traceability markings on GaN, sapphire, production has to be extremely cost-efficient, SiC or GaAs wafers with OCR or T7 data which also means fast. matrix codes. ROFINs Waferlase systems are designed to meet the most stringent ROFIN is among the few suppliers who can requirements of wafer marking, assuring reliably meet those criteria with the PowerLine traceability of the manufacturing process for E 12 IC laser at 532 nm and a double-head fault analysis of semiconductor devices. setup. Relevant application tests have already been successfully realized in our application The systems all produce marks that are lab. Laser marking is extremely demanding machine-readable, have no negative influence with 0.080 mm character height, 0.035 mm on subsequent manufacturing steps and still line width, exact positioning and more than permit clear identification at the end of the 1000 characters / s. Engraving is done on process chain. a tiny area as an example in white plastic housings. ROFIN‘s strengths are the real-time PowerLine E 12 IC SHG lasers mark compensation of position tolerances which is leadframes during the LED production process indispensable for a reliable production process. with miniscule 2D matrix codes, made up of Moreover, our lasers offer cost-efficient spots which are just 0.043 mm small. ROFIN‘s operation and high integration capability. PowerLine E 30 IC SHG lasers also mark white ceramics used as substrate for LEDs, with Traceability Marking of High-Power LEDs character heights of 0.15 mm and line widths of 0.020 mm or ECC200 data matrix codes of 1 Mass market production of LEDs for LCD mm edge length. backlighting typically requires simple marking of type codes and connection labels. But there Market With Significant Growth Potential is also a growing market for high-power LEDs which require full product traceability, like the LED backlighting technology will develop in automotive and mobile phone industry. Interior several stages according to expert opinion. lights of modern cars already make full usage Local dimming currently debuts in high-end of LEDs. Stoplights, rear- and headlights will displays and is expected to enter more price- follow in the next years according to expert sensitive segments while RGB backlighting will opinions. Mobile devices rely on LEDs for find its way into the mass market. This opens display and keyboard backlighting, flashlights up interesting and challenging application fields and more. for laser processing.
April/May 2010 www.compoundsemiconductor.net 213 news digest ♦ compound semiconductor
MaxIC Expands Production for the Next and communications,” said Dr. Jeff Cheng, Generation LED Lighting with WI Harper President and CEO, MaxIC Technology Investment Corporation. “We are excited to serve this 2010-03-17 dynamic industry with high performance, high efficiency driver ICs and proud to earn WI Fabless IC Designer Grows Operations and Harper’s support.” Team to Deliver the Next Generation of LED Driver Chips
MaxIC Technology Corporation, innovators of Tekcore announces placement to fund energy efficient integrated circuits (ICs) widely MOCVD purchase used in LEDs for general lighting, LCD TV 2010-03-16 backlighting, and consumer electronics, today announced an expansion capital investment led Tekcore has announced a placement to provide by WI Harper Group. Currently shipping four additional MOCVD machines to help meet a product lines, MaxIC will use this investment to growing demand for its products. ramp up production and expand the company’s cutting-edge R&D efforts. LED chip manufacturer Tekcore has announced the placement of an additional 100 million With headquarters in Beijing and operation shares worth NT$3 billion (£62.24 million) in offices in Shenzhen and Hong Kong, MaxIC order to fund the purchase of additional metal- is known as an emerging Chinese leader in organic chemical vapour deposition (MOCVD) the design, development and marketing of machines. advanced analog, mixed-signal, and power management ICs. The Company addresses The firm said that growing demand for its several high growth segments of the Light products in the backlighting sector in particular Emitting Diodes (LED) industry including have led it to make this announcement. general illumination, industrial and automotive lighting, and LCD backlighting. By the end of the first quarter of 2010, the company hopes to have made significant High Performance, High Efficiency, and investment in MOCVD and plans to own 38 Green Power machines - up from 27 at the end of 2009.
“MaxIC is a capital efficient fabless IC Increased demand for its high-brightness (HB) technology firm led by a team with industry LEDs is also forecast to push up the company’s credentials from an enviable group of global IC leaders,” said Peter Liu, Chairman, WI Harper revenue by 20 per cent over the first three months of the year to NT$160 million. Group. “MaxIC’s strategic presence in China provides global customers with cost-effective Tekcore was founded in 2000 and specialises operations and enables the firm to address in the development of HB LED technology. huge domestic and international market opportunities. The Company is ideally situated to become a global leader and key ecosystem The firm’s products have a range of uses, such partner in the LED value chain.” as primary light sources for fibre-optic cabling, LCD and projection backlighting, vehicle, “LED’s are replacing legacy technology interior and exterior lighting, as well as in large- rapidly because they are highly energy scale displays and billboards. efficient, avoid the use of environmental toxins, and dramatically improve the performance of consumer electronics, lighting
214 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Avago Technologies Announces Industry’s from a single intensity and color bin to provide First Surface Mount High Brightness Round better uniformity. and Oval LED Lamps for Electronic Sign Applications Key Features 2010-03-16 • Compact form factor with well defined spatial New Amber, Red, Green, and Blue LEDs Target radiation pattern Outdoor and Indoor Electronic Sign and Signal • Viewing angles: Manufacturers o ALMD-xx3D series: 30 degrees o ALMD-Lx36 series: 40 by 100 degrees Avago Technologies (Nasdaq: AVGO), • Lens features: Tinted a leading supplier of analog interface • High brightness material components for communications, industrial • Compatible with industrial reflow soldering and consumer applications, today announced processes the industry’s first surface mount technology • Moisture Sensitivity Level (MSL) 2A (SMT) high brightness oval and round LED lamps for use in outdoor and indoor electronic Pricing and Availability sign applications. Available in Amber, Red, Green and Blue colors, Avago’s round ALMD- Avago’s ALMD-xx3D and ALMD-Lx36 LED xx3D and oval ALMD-Lx36 LED lamps target lamps are priced from $0.24 to $0.30 each, manufacturers of full color and monochrome respectively in minimum quantities of 1,000. traffic signs, highway variable message signs, Samples and production quantities are gas station price signs, and full color video wall available now through Avago’s direct sales applications used for advertising. channel and worldwide distribution partners.
With the increased use of LED lamps in the About Avago Technologies marketplace, more designers of electronic signs are moving towards using LEDs in their Avago Technologies is a leading supplier designs that are cost effective, offer high of analog interface components for performance, high brightness and reliable communications, industrial and consumer long-term performance. Moreover, these applications. By leveraging its core designers are choosing SMT LEDs because competencies in III-V compound and silicon of their ease of assembly, compact footprint, semiconductor design and processing, the and manufacturing flexibility which can help to company provides an extensive range of reduce overall system design and development analog, mixed signal and optoelectronics costs. components and subsystems to approximately 40,000 end customers. Backed by strong Avago’s round ALMD-xx3D and oval ALMD- customer service support, the company’s Lx36 LEDs have about the same luminous products serve four diverse end markets: intensity as conventional high brightness wireless communications, wired infrastructure, through-hole LED lamps and can be assembled industrial and automotive electronics, and using common SMT assembly processes. consumer and computing peripherals. Avago Additionally, these LED lamps are compatible has a global employee presence and heritage with industrial reflow soldering processes, and of technical innovation dating back 40 years made with an advanced optical grade epoxy to its Hewlett-Packard roots. Information to provide superior performance in outdoor about Avago is available on the Web at www. sign applications. For easy pick and place avagotech.com. assembly, these LED lamps are shipped in EIA- compliant tape and reels. Each reel is shipped Follow Avago on Twitter at http://twitter.com/
April/May 2010 www.compoundsemiconductor.net 215 news digest ♦ compound semiconductor
Avagotech. silicon carbide, graphitized silicon carbide, or another diamond face) in abrasive applications, Safe Harbor Statement at extreme temperatures, or under poorly lubricated conditions. Running UNCD T30 This announcement and supporting materials against a silicon carbide counterface reduces may contain forward-looking statements which energy dissipation due to friction at the address our expected future business and interface by 75 percent when compared to financial performance. These forward looking running silicon carbide against itself. statements are based on current expectations, estimates, forecasts and projections of future Because UNCD T30 is exposed to extreme Company or industry performance based on shear forces when lubrication is lost, it has management’s judgment, beliefs, current trends been engineered so that its bond strength to and market conditions, and involve risks and silicon carbide is stronger than the compressive uncertainties that may cause actual results strength of the silicon carbide itself. “Diamond to differ materially from those contained in is the world’s hardest material and there’s no the forward-looking statements. Accordingly, better choice for durability on a surface that’s we caution you not to place undue reliance susceptible to failure due to wear than UNCD on these statements. Avago Technologies T30,” said ADT’s vice president of engineering, Registration Statement on Form S-1, as Charles West. amended, filed with the SEC on January 27, With the addition of UNCD T30 to ADT’s family 2010 and other filings with the U.S. Securities of UNCD materials, there is now a diamond and Exchange Commission (“SEC”) (which solution that is compatible with most fluid you may obtain for free at the SECs website media and sealing applications. “Diamond is at http://www.sec.gov) discuss some of the the material of choice when reliability matters. important risk factors that may affect our UNCD T30 is a game changer because instead business, results of operations, and financial of diamond being relegated to a small sliver condition. of high end applications, diamond is now compatible with almost all material types and fluid combinations found in mechanical seals,” Advanced Diamond Technologies said ADT’s president, Neil Kane. Introduces Diamond Wear Surfaces ADT gratefully acknowledges the National Optimized for Dry Running Science Foundation for its SBIR grant to 2010-03-16 develop UNCD materials for wear applications.
Advanced Diamond Technologies (ADT) announces UNCD T30TM, a new addition to its growing UNCD family of diamond materials. Powersafe’s Amplification Technologies Announces Distribution Agreement for Israel UNCD T30 is specifically optimized to withstand 2010-03-16 fluid loss or dry running in mechanical seals for fluid pumps. Fluid loss is one of the PowerSafe Technology Corporation subsidiary largest causes of premature failure in rotating Amplification Technologies Inc. and El-Gev equipment resulting in equipment damage, lost Electronics Ltd. today announced the signing production, and environmental contamination. of a distribution agreement for Israel. El-Gev UNCD T30, when applied to a silicon carbide Electronics Ltd. will market and distribute mechanical seal face, can be run against a the full line of ATI’s innovative Discrete variety of hard counterface materials (e.g., Amplification (DA) devices for low-level light
216 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest detection. “There are hundreds if not thousands of different lighting applications each with their “We are excited about expanding our product own light source requirements. We have two distribution network with El-Gev Electronics objectives. First, to provide a path for our Ltd,” said Avery Kornbluth, COO of ATI. “Israel customers to move to a solution that makes is a major hub of technology innovation in the sense for their business, and second, to enable markets we seek to serve and we are looking them to rethink their design, take full advantage forward to expanding in this region.” of the size and power of our LUXEON LEDs, and deliver a solution that adds value when “We look forward to adding ATI’s patented compared to the original bulb-based solutions,” Discrete Amplification technology to our product said Frank Harder, Vice President of Product set,” said Yoel Yogev, President and CEO of El- Marketing. Gev Electronics Ltd. “Our customers will now be able to start utilizing these next generation LUXEON c summary specifications are: photodetection devices, for their technology Small form factor, 2.04 mm x 1.64 mm x 0.7 products.” mm Typical 82 lumens per watt and 85 lumens of light output PHILIPS LUMILEDS INTRODUCES ULTRA Typical forward voltage of 2.95 V COMPACT LUXEON C ANSI aligned binning CCT 5000K to 5700K 2010-03-16 70% lumen maintenance at 20,000 hours
LUXEON c delivers a more efficient, cost Availability effective LED solution for appliance, portable and personal lighting solutions LUXEON c is available from Future Lighting Solutions, www.futurelightingsolutions. com. Future Lighting Solutions also offers Addressing the lighting industry’s need for engineering and complementary infrastructure smaller, more powerful, and long-lasting LEDs resources to assist customers with rapid for applications like refrigerators, freezers, and development and market introduction of washing machines, Philips Lumileds today solutions using LUXEON c. Complete is introducing LUXEON c, the company’s documentation is available at www. latest addition to its LUXEON power LED philipslumileds.com. portfolio. LUXEON c enables more efficient, cost effective, environmentally friendly lighting solutions for the tens of millions of appliances, tools, and portable applications that typically Intense Ltd. Adds Ultra Compact, High use a 10W to 40W conventional light bulb. Brightness 600W Mini Stacked Array Laser For owners and users of these applications, 2010-03-16 implementing LUXEON c can reduce operating Intense Ltd., developer of next generation costs, energy consumption, and deliver a better semiconductor lasers, systems and solutions, experience for the owner. today announced the 600W Mini stack, the newest member of the Hermes family of high power QCW stacked arrays.
The 600W Mini Stack is an ultra compact 600W QCW stack with an emission area of less than 3mm x 3mm. A high brightness stack, it
April/May 2010 www.compoundsemiconductor.net 217 news digest ♦ compound semiconductor generates output in the range of 7.6 kW/cm². Availability: The design is built in standard wavelengths The 600W Mini QCW stacked array is available of 808 and 940 nm. Custom wavelengths, now. Pricing is based on quantities ordered. including multicolor options, are available on Other wavelengths are available on request. request.
“The Mini stack offers 50% higher optical power density than some 2kW stacks that ORANGE LAUNCHES OPTOLOCK- use standard bar technology,” stated Kevin ENABLED FIBER OPTIC HOME INSTALLATIONS Laughlin, Chief Commercial Officer at Intense 2010-03-16 Ltd. “This, combined with a compact footprint and small emission area, makes the Mini stack Firecomms, a leading developer of high-speed the ideal candidate for high power end pumping Plastic Optical Fiber (POF) transceivers, of DPSS laser sources. Its ultra compact form announces that its OptoLock transceiver is factor and high optical power density offer a key component of the home networking a real opportunity to reduce size and cost, solution being deployed by Orange. and dramatically improve system operating efficiency for solid state laser manufacturers A key brand of France Telecom, one of the currently using flash lamps or standard diode bar pump technology.” world’s leading telecommunications operators, Orange is deploying POF as the medium of The standard 600W Mini stack is offered for choice in the home to reduce installation times, operating conditions to 60 degrees C. High guarantee network reliability, and enhance temperature versions of most Hermes bars and customer satisfaction ratings. stacks, covering operating ranges from 70 to 130 degrees C, are available. Power levels and Orange’s OptoLock-enabled fiber optic kits offer emission areas can also be custom designed to a reliable home networking solution by allowing the distribution of a POF network throughout meet specific needs of OEM customers. the house. The ready-to-install fiber optic kit “The 600W Mini stack was designed with the enables Orange customers and installers to defense market in mind,” continued Laughlin. connect a TV or computer within a high-speed “Defense customers are always looking home network in just minutes, minimizing the to reduce the footprint / weight ratio, and visual impact of the connection due to POF’s improve battery life and system performance, ultra-thin diameter. particularly under harsh conditions. The 600W Mini is an extremely compact, ruggedized end Orange has cited technical performance, pump diode array solution with a very bright simplicity of installation, and discreet design future in front of it.” as benefits of the fiber optic kit. According to Orange field trial results, 98% of users The 600W Mini stack and all Hermes bars and expressed deep satisfaction with this innovative stacked arrays incorporate Intense’s patented technology. Quantum Well Intermixing (QWI) technology. This increases the brightness and reliability of “This POF product offering by one of the largest the lasers while dramatically reducing instances telecommunications companies in the world of catastrophic optical damage (COMD). .” demonstrates the overwhelming benefits of POF to operators and customers alike,” says The entire line of Hermes QCW bars and Hugh Hennessy, vice president of sales and stacks are assembled using AuSn hard solder marketing for Firecomms. “This deployment and designed for a wide range of aerospace, is one of many as operators and installers defense and industrial applications. seek ways to overcome the disadvantages
218 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest associated with traditional wired technologies.” now available for smaller form-factor chips,” said Alexei Erchak, CTO, Luminus Devices. The design of OptoLock enables the fiber to “Luminus has been granted more than 40 be cut and terminated to the exact required patents for our PhlatLight technology with length on site, enabling even the most novice over 100 more applications on file. Although consumer to quickly and easily terminate the our primary business remains manufacturing bare optical fiber. This means that OptoLock big-chip LEDs, we are pleased that through enables all the advantages of optical fiber to licensing these patents we can help solid- be brought into the home with do-it-yourself state lighting grow even faster in small-chip simplicity and costs. The benefits of this simple, applications.” robust high-speed interface will be significant as high-speed services like 100 Mb IPTV are “We chose to license PhlatLight technology delivered into the home. because it provides the highest-efficiency chip Due to its ease of use, large core tolerances, design in the industry for all chip sizes,” said and low costs, POF is enjoying substantial Frank Chien, president and CEO of Forepi. “We growth in home network and point-to-point look forward to growing our business by using interconnection. The annual worldwide POF PhlatLight technology in small and mid-power market is estimated to be worth over $2.5 chip blue and green LEDs.” billion in 2011, according to market research by Information Gatekeepers. Designed to provide an ultra-bright, reliable light source, PhlatLight big-chip LEDs are used in display applications by some of the world’s largest electronics companies such as Acer, Luminus and Forepi Announce Licensing LG, Sony, Samsung and Toshiba. PhlatLight Agreement big-chip LEDs are also enabling new general 2010-03-15 illumination applications in lighting markets
such as architectural, entertainment, retail, Partnership Will Enable Small Form-Factor residential, roadways, digital signage and LEDs based on Award-Winning Phlatlight industrial high-bay lighting. Technology
Luminus Devices, developer and manufacturer About Luminus Devices of big-chip PhlatLight® LEDs, today announced a licensing agreement that enables Formosa Luminus Devices, Inc. develops and Epitaxy (Forepi) to manufacture small and manufactures high performance solid-state mid-power chip blue and green GaN LEDs light sources – PhlatLight® LEDs - for a variety on the PhlatLight platform. By licensing and of lighting applications. Its headquarters and incorporating PhlatLight chip-technology, Forepi primary manufacturing facilities are located now has the capability of producing high- in Billerica, Massachusetts, U.S.A. For more performance vertical-GaN chips for markets information, visit www.luminus.com that require the performance of PhlatLight technology, but in a small and mid-power chip New miniature high performance duplexers form factor. by Avago
2010-03-15 “Luminus’ award-winning big-chip PhlatLight
LEDs enable a multitude of new high- Avago Technologies Announces New Series performance lighting applications. By working of High Isolation FBAR Duplexers for UMTS with an innovative company like Forepi, the Handsets and Data Terminals. New 2 by 2.5 benefit of the PhlatLight chip-platform is mm Duplexer Series Provide Best-in-Class
April/May 2010 www.compoundsemiconductor.net 219 news digest ♦ compound semiconductor
Performance for Mobile Applications that degrees C Operate in UMTS Bands 2, 4 and 8 Duplexer Specifications Avago Technologies today announced three new miniature high performance duplexers for Band 2 - ACMD-7410 Rx Band performance: use in UMTS Bands 2, 4, and 8 handsets and 1.4 dB typical insertion loss; 61 dB typical Rx data terminals. Avago’s ACMD-7410/7609/7606 noise blocking. Tx Band performance: 1.4 dB duplexers are low insertion loss, high isolation typical insertion loss; 66 dB typical Tx interferer and high rejection duplexers that are achieved blocking. using Avago’s proprietary Film Bulk Acoustic Resonator (FBAR) technology. Avago’s Band 4 - ACMD-7609 Rx Band performance: innovative Microcap bonded wafer technology 1.3 dB typical insertion loss; 58 dB typical Rx allows these duplexers to be assembled in a noise blocking. Tx Band performance: 1.3 dB molded chip-on-board module that is less than typical insertion loss; 60 dB typical Tx interferer 0.95 mm high with a footprint of 2.0 by 2.5 mm. blocking.
These latest additions to Avago’s family of Band 8 - ACMD-7606 Rx Band performance: miniature UMTS duplexers have been designed 2.2 dB typical insertion loss; 55 dB typical Rx to enhance the sensitivity and dynamic range noise blocking. Tx Band performance: 2.2 dB of handset receivers by providing high isolation typical insertion loss; 60 dB typical Tx interferer of transmitted signals from the receiver input, blocking. and high rejection of transmit-generated noise in the receive band. Moreover, the superior Pricing and Availability power handling capability of the FBAR bulk- mode resonators designed into these duplexers All three of Avago’s new UMTS duplexers support the high output power levels used in are available now with pricing starting from mobile communications applications while $1.99 for the ACMD-7410 and $1.44 for the adding virtually no distortion. ACMD-7609/7606 in 10,000 unit volumes. More information about Avago Technologies’ Avago’s ACMD-7410 is a multi-mode duplexer wireless products can be found at: www. designed for use in UMTS Band 2 and CDMA avagotechwireless.com. PCS applications with the receive channel capable of being used for GSM1900 Rx co- banding. The ACMD-7609 is a multi-mode Edwards Zenith System Integrates Latest duplexer for use in UMTS Band 4 duplexer and Vacuum and Abatement Technology CDMA AWS-1 applications. Completing the 2010-03-15 trio of new duplexers from Avago is the ACMD- 7606, which is designed for use in UMTS Band New offering addresses latest semiconductor 8 handsets and mobile data terminals. manufacturing requirements while helping to reduce overall manufacturing cost Edwards, Key Features a leading global supplier of vacuum and abatement equipment and services, today -- Miniature size: Standard 2 by 2.5 mm PCB announced it has expanded its Zenith™ range footprint of integrated exhaust management systems -- High power rating: 31 dBm maximum Tx with a new offering incorporating the iXH harsh power process vacuum pump and the Atlas™ family -- Environmentally friendly: RoHS compliant, of gas abatement solutions. This expansion Halogen free and TBBPA free of the Zenith range offers semiconductor -- Operating temperature range: -20 to +85 manufacturers a highly efficient, low cost-of-
220 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest ownership (CoO) answer to the increasing as an innovative pump seal technology that vacuum and abatement demands for advanced helps lengthen process life and reduce leakage semiconductor processing at the 60 nm and risks. iXH systems also help to expand process smaller design rules. windows, thereby helping to improve yields. They have a smaller footprint than previous “Advanced semiconductor manufacturing generation pumps and help lower system CoO processes have created new vacuum by extending pump life and reducing utility technology challenges, while environmental costs. concerns are leading to tighter regulation of the gases exhausted during the The Atlas combustion-based abatement family semiconductor manufacturing process,” said offers a range of abatement systems tailored Mike Allison, managing director, sales and to the needs of individual semiconductor service, Edwards. “At the same time, economic manufacturing processes, such as CVD and imperatives are driving semiconductor etch. They consume half the fuel of previous- manufacturers to seek opportunities to lower generation abatement systems, thereby the CoO of their tools, as well as reduce overall significantly reducing operating costs. The manufacturing costs. Both the Atlas abatement Atlas family was specifically designed to system and the iXH pump were designed to increase ease-of-use and simplify maintenance meet these latest manufacturing requirements, operations. A combination of field-proven while delivering lower system CoO, reduced combustion abatement and wet scrubbing utility costs, improved ease-of-use and extend stages provide exceptional abatement maintenance cycles. Combining the two in performance, excellent powder handling and a Zenith system, results in additional CoO resistance to corrosion. benefits from increased system integration, while also reducing installation time and For further information on the Zenith range complexity, and saving valuable fab real estate.” or other Edwards products please visit www. edwardsvacuum.com The Zenith integrated vacuum and abatement systems offer a range of turn-key, process- centric exhaust management solutions for semiconductor manufacturing. All components EPC announce keynote address on are completely integrated, and each function is Integrated Power Electronic Systems supported by a powerful control interface. The 2010-03-15 Zenith range provides full internal distribution, as well as regulation and monitoring of all Efficient Power Conversion Corporation (EPC) services. A Zenith exhaust management today announced that CEO, Alex Lidow, will solution can reduce system footprint by up to be delivering the keynote address at the 2010 70 percent and can reduce utility hook-ups by Conference on Integrated Power Electronic over 60 percent. Systems (CIPS) in Nuremberg, Germany on March 18. The iXH series of dry pumps for harsh processes offer greater process capability and The title of the speech is, ‘Is it the End of the reduced cost of ownership (CoO) compared Road for Silicon on Power Management’? and to previous-generation Edwards pumps. They will discuss the reasons why gallium nitride feature a wide temperature range, which helps is now capable of replacing silicon power minimize by-product accumulation; greatly MOSFETs in a broad segment of the $7B increased powder-handling capabilities; and market. a unique Gas Buster™ technology; as well
April/May 2010 www.compoundsemiconductor.net 221 news digest ♦ compound semiconductor
‘Earlier this week EPC introduced a family its position in the German market and highlights of enhancement-mode GaN transistors its expertise in providing equipment for cutting ranging from 40V and 33ADC to 200V and edge compound semiconductor research. 12ADC. These products offer performance unachievable in silicon yet, due to the fact they are produced in a standard silicon foundry, can Innovative Technology for the Replacement be offered at silicon MOSFET level pricing. We of Silicon Solar Cells are pleased with this opportunity to discuss the 2010-03-16 implications of this disruptive product with the participants of this conference,’ said Dr. Lidow. XsunX Moves Closer to Commercializing Its Innovative Technology for the Replacement of The keynote speech is accompanied by a Silicon Solar Cells paper of the same title which will be available in the IEEE Xplore digital library, or at: XsunX Inc, the developer of advanced, thin-film www.epc-co.com/ToolsandDesignSupport/ photovoltaic (TFPV) solar cell technologies and ProductTraining.aspx manufacturing processes, today announced the Riber announces Compound 21 unit sale company has reached a significant milestone 2010-03-16 in its development process: the completion of a co-evaporation processing chamber design MBE unit sold to German compound that combines several thermal evaporation semiconductor research lab. techniques in one unified process to produce the CIGS (Copper Indium Gallium diSelenide) Molecular beam epitaxy (MBE) systems solar cell’s absorber layer. developer Riber has announced the sale of a “This development is crucial to both the Compound 21 MBE unit to a German firm. equipment and process technology side of Innovation of High-Performance our efforts,” said Tom Djokovich, CEO of Microelectronics Laboratory (IHP Labs) - XsunX, Inc. “The completion of this chamber based in Frankfurt - is a European research converges several operations that we have and innovation centre and has purchased the been developing separately, allowing all of the unit for the development of graphene-based processes necessary to produce the CIGS products. layer for our cross-industry technology to work in unison. This development increases the rate with which we can develop this new technology Graphene is a monofilament of carbon molecules, densely packed in a honeycomb towards our initial baseline commercialization lattice. The name is derived from graphite, goals. This is a fundamental next step in as it is made from many layers of graphene our plan to commercialize our hybrid CIGS sandwiched together. manufacturing process, and deliver a potential replacement solution for the use of silicon.” The material has uses in the development of The hybrid cross-industry system XsunX is next-generation ultra-fast transistors and, as developing is an integrated delivery method such, IHP Labs aims to use the Compound 21 that uses proven material handling and system to help in this research. automation technologies from the Hard Disk equipment (HD) industry and adapts them As a result, the organisation asked for the MBE to small-area thin-film photovoltaic (TFPV) unit to be fitted with a gas injector. co-evaporation processes to configure the absorber layer, or solar power conversion Riber noted that this deal will help strengthen portion of the cell, to produce low cost solar
222 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest cells. The chamber will process 125 mm x Matheson Tri-Gas and K-Air Form Industrial 125 mm production-sized substrates that the Gases Joint Venture in India company anticipates will be replicated as the 2010-03-16 key component of a full commercial production toolset, after additional testing of the chamber Matheson Tri-Gas and K-Air Gases India itself. Private Limited (“K-Air”) announced the signing of a definitive agreement to form a new “This integration of numerous processing industrial gases Joint Venture in India. technologies into a single chamber design will allow us to begin testing the value of hard disk The new company, named Matheson K-Air material handling and systems management Gases India Private Limited (“Matheson K-Air”), technologies,” said XsunX’s CTO Robert will bring together the existing industrial gases Wendt. “From the start, we envisioned this business of K-Air and the global industrial chamber as the key to our ability to viably gases experience of Matheson Tri-Gas in India. produce commercial quantities of CIGS solar Matheson K-Air plans to commence operations cells using small-area processing techniques.” in March 2010 and will be headquartered at an Mr. Wendt further added, “We believe that a existing K-Air facility in Pune, India. key component to our success lies in our use of the co-evaporation process on individual small- K-Air has operations in Pune and Aurangabad area substrates, or wafers similar in size to where it transfills helium and produces silicon wafers, to produce the solar absorbing packaged gases. It also trades in bulk and portion of the solar cell.” specialty gases. Founded in 2001, K-Air has built a reputation as one of the most Co-evaporation has been at the forefront of reliable suppliers of a wide portfolio of gases technology development efforts at institutes to its customers in India. In 2007, K-Air worldwide such as the National Renewable commissioned a modern helium transfill facility Energy Laboratories (NREL) here in the USA, in Pune that delivers best-in-class quality and and other renowned agencies including the performance. Institute of Energy Conversion/University of Delaware and Stuttgart in Germany. Each William J. Kroll, Chairman & CEO of Matheson of these agencies has achieved world class Tri-Gas stated, “This acquisition is consistent efficiency conversion capability utilizing co- with our international growth strategy and evaporation techniques. highlights Taiyo Nippon Sanso’s commitment to expand in high growth international markets. Chamber completion is the result of K-Air has done a great job of penetrating the experimentation and design modifications to bulk, helium and packaged gas businesses both equipment and process technology, and in India and provides an excellent platform in addition to being the foundation on which for growth. Together, we can grow faster and XsunX will continue to build its technology, also expand to other important market segments.” serves as a distinguishing advancement in the company’s intellectual capital portfolio. “From Kiran Karnawat, Managing Director of K-Air the beginning, we envisioned the completion added, “Formation of the JV is a natural of the chamber design, and its co-evaporation progression of our existing relationship with system, as a differentiating feat of the scientific Matheson Tri-Gas. team—a demonstration of their engineering and development prowess,” noted Djokovich. We are excited about the potential for the combined company that will bring together
the vast expertise of a key global player
like Matheson Tri-Gas and K-Air’s in depth
understanding of the Indian market. The K-Air
April/May 2010 www.compoundsemiconductor.net 223 news digest ♦ compound semiconductor team is excited about the JV and is looking “RWS05020-10 is a miniaturized wideband forward to accelerating its positive momentum. amplifier, a newly developed hybrid,” says chief ” technical officer Dr Samuel Cho. The Bridgeford Group, a unit of The Mizuho RFHIC has incorporated pin types for both Financial Group, and Meghraj Capital Advisors DC and RF port to make the product easy to Private Limited, the Indian investment use, he adds. The RWS05020-10 also has a banking arm of Meghraj Group, jointly acted bolted-down structure and operates at 28V as financial advisors to Matheson Tri-Gas with 51dBm @ OIP3. RFHIC says that, as for the transaction. Legal representation was GaN devices are actively evolving, reliability is provided to Matheson Tri-Gas by Wakhariya improving while they are also becoming more & Wakhariya. Ernst &Young India acted as cost-effective. financial advisors to K-Air. In addition, the firm has been developing more K-Air is a leading supplier of helium, specialty, thermally robust designs, and the substrate bulk and packaged gases in the domestic material has been migrated from silicon to Indian market, neighboring countries and silicon carbide (SiC), enhancing reliability Middle East. Matheson Tri-Gas is a single and efficiency further, directly addressing the source for industrial, medical, specialty and increasing ‘green’ concerns of both policy electronic gases, gas handling equipment, high makers and end users (who are also calling performance purification systems, engineering for smaller systems, without sacrificing and gas management services, and on-site gas performance). In particular, for sub L-band generation with a mission to deliver innovative frequencies, there are many obstacles to be solutions for global customer requirements. overcome in order to shrink the size of power Matheson Tri-Gas is the largest subsidiary of amplifiers. the Taiyo Nippon Sanso Corporation Group, one of the top five suppliers of industrial, specialty, and electronics gases in the world. Gain Microwave introduces the GMW3051 2010-03-16
RFHIC launches 20W GaN-on-SiC power Gain Microwave introduces the GMW3051 amplifier covering 20–1000MHz which is a high-power, negative impedance 2010-03-16 amplifier.
RFHIC Corp of Suwon, South Korea, a The MMIC is designed to be easily integrated manufacturer of gallium nitride and gallium with an external resonator for use as a Voltage arsenide active RF & microwave components Controlled Oscillator. Using a high performance and hybrid modules for telecom and broadcast gallium nitride (GaN) process, the GMW3051 markets, has introduced a molded GaN-on-SiC delivers good phase-noise performance and power amplifier generating 20W and covering high rf output power, combined with the ability the frequencies 20–1000MHz. to operate in harsh environments, such as high temperature. The RWS05020-10 is based on gallium nitride on silicon carbide (GaN-on-SiC) transistors, This makes it ideal for military, aerospace and providing good reliability at high temperature, industrial applications. as well as 36dB of gain and a typical 43dBm @ P3dB with 50% efficiency. Moreover, the physical size is just 2.1” x 1” x 0.5”.
224 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
SemiSouth Announces New Reference Business Development, “The SGDR600P1 is Design for its Engery-Efficient 1200 V SiC an opto-isolated, two-stage driver, used for FET high-speed, hard-switching of our normally- 2010-03-16 off 1200 V JFET, which enables customers to quickly and easily obtain record low switching SemiSouth today announced that a new gate (and total) losses at frequencies up to 250 reference design is available for its energy- kHz.” efficient SiC FET, which is a normally-off 63 mΩ, 1200 V, JFET consuming 7-to-10 times SiC is an emerging semiconductor technology less switching energy than the insulated gate enabling energy efficient operation of power bipolar transistors (IGBTs) typically used in ac conversion and power management in telecom distribution networks. power supplies, inverters in solar and high- frequency welding, future automotive electric vehicle platforms, and many other products. The true promise of SiC is its ability to make power supplies and power inverters up to 50- 75% more energy efficient, operate at up to four to eight times higher frequency, and as a result run cooler and be physically much smaller in size. As an example, SiC power JFETs are expected to increase the ‘fuel’ efficiency of hybrid electric vehicles and help make them more affordable for consumers.
Integra Technologies Becomes a DMEA Trusted Supplier for Test Services 2010-03-16 The peak gate current of the driver is +6 A / - 3 A, and is extremely helpful to customers who Integra Technologies, LLC., leading supplier of are designing in or ramping new designs using test services in the US, has been accredited by SemiSouth’s SiC FET since full schematics and The Defense Microelectronics Activity (DMEA) bill of materials is provided in the datasheet. as a DoD Category 1A Trusted Integrated Circuit Supplier for Test Services at their “This new reference design allows our Wichita , KS facility customers to add a standard gate driver with a bill of materials cost that is extremely low, As a Trusted test supplier, Integra offers since we are using all standard, off the shelf semiconductor test software development, commercial components for the very compact testing, qualification, characterization and other (28 mm x 19 mm) reference driver board,” related technical services. Integra’s electrical commented Dan Schwob , SemiSouth’s VP test services encompass both final test and of Sales & Marketing. Since releasing the probe. Integra has one of the largest and most SiC FET in late 2008, SemiSouth has seen experienced test engineering organizations in widespread adoption of this popular power the industry and has earned an outstanding transistor because of its advantages in energy reputation for quality, consistency, and on- efficiency, reliability, and cost relative to other time delivery. Integra’s engineering staff of 25 SiC technologies. experienced engineers and installed base of 32 According to Dr. Jeff Casady , CTO & VP of test systems is capable of handing all device technologies including RF, Digital, Analog,
April/May 2010 www.compoundsemiconductor.net 225 news digest ♦ compound semiconductor
Linear and Mixed Signal. potential environmental ramifications, if mishandled. Atlumin and Floridienne, both are Goto http://www.dmea.osd.mil/trustedic.html to recognized leaders in clean materials handling. view the current official list of trusted suppliers Atlumin has a rigorous closed loop system for all its minor metals, ensuring maximum use and reuse of these metals. Floridienne has a long- Minor metal partnership for solar standing reputation for its zealous pursuit of 2010-03-16 clean materials processing.
Atlumin Energy and Floridienne create Simon Vlajcic, Managing Director of Floridienne partnership to create ease of access for notes: “the unwavering commitment of both materials for solar production Atlumin and Floridienne to environmental responsibility is based on known, well Atlumin Energy, a supplier of minor metal- defined and controlled processes at work. based products to solar module manufacturers, Perhaps the most gratifying result of our new has established a partnership with Floridienne, partnership with Atlumin is the ability to assure a cadmium supplier and reclaimer, the lead solar manufacturers and their clients that global supplier. This partnership aims to ensure environmental issues are being managed by Atlumin’s position as the most reliable source two highly committed companies supplying the for the procurement, fabrication, and reclaim solar industry.” of cadmium containing materials. Atlumin’s Atlumin Energy manufactures materials for the partnerships with both MCP Group (of which renewal energy market, including solar module Atlumin is a wholly owned subsidiary) and manufacturers, with a focus on increasing Floridienne allow them to provide a turnkey efficiency. Atlumin products range from key solution for all minor metals used by solar elements, alloys, and specialty chemicals, to manufacturers in both CdTe and CIGS engineered fabrications, such as sputtering technologies. targets. Metals include cadmium, copper, Solar module manufacturers could welcome gallium, indium, molybdenum, selenium, the potential cost and time savings that the and tellurium. Atlumin also offers advanced Atlumin - Floridienne partnership can enable. recycling and reclaim programs. Previously, the supply chain involved several Floridienne is a Belgium based company different organizations, each handling a piece with activities in minor metals, chemicals, of the cycle. Now, Atlumin sources, refines, biotechnology, agro-foods and venture capital fabricates, and supplies products. All this is investments. It is the biggest producer and done by managing regulatory details in an reclaimer of cadmium based materials for environment friendly closed loop system. solar, batteries and metallurgical applications. Gregory Phipps, President of Atlumin notes: It is also a major player in the manufacture “this gives us opportunity to further compress and reclaim of zinc, lead, and nickel based the supply chain and create unique offerings materials. for our customers. Our clients can focus on their core technology and development while we streamline and manage the supply chain. Opnext Demonstrates Single Wavelength, We are pleased that our new partnership helps Real-Time Coherent 100G PM-QPSK Modem solar manufacturers to minimize their capital in AT&T Network investment and increase watts per unit cost.” 2010-03-16
A key issue with cadmium in solar is the 127 Gbps modem was field demonstrated on
226 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
900+ km link at AT&T Fiber-to-the-Home (FTTH) technologies push more traffic into carrier backbone networks, Opnext, Inc., a global leader in high speed where Opnext is in an excellent position to optical communications technology, today benefit from the next wave of bandwidth announced that it has demonstrated a single investments.” wavelength, real-time coherent 127G PM- The real-time optical Modulator Demodulator QPSK (Polarization Multiplexed Quadrature (MODEM) operates at 127 Gbps with a PM- Phase Shift Keying) modem trialed on an QPSK modulation format described in the AT&T ultra long haul link between Louisiana Optical Internetworking Forum framework and Florida. The demonstration also included document on Ultra Long Haul 100 Gbps Opnext’s fully IEEE 802.3ba standards- transmission. The system is designed compliant CFP MSA client optical modules to carry an industry leading 20 percent which are fully interoperable with 100 GbE overhead Forward Error Correction (FEC) interfaces on IP routers. required for ultra long haul and submarine Opnext’s plug and play technology allows transmission distance and to carry 100 GbE carriers to upgrade their existing line systems payload transparently mapped into an ITU to 100 Gbps without having to strand capacity OTU4 payload. The design is also extremely or light new fibers. It eliminates the need tolerant to filtering allowing for metro/regional for external dispersion compensation which networking with 10 or more cascaded ROADMs reduces cost, minimizes IP latency and allows at 50 GHz channel spacing. for deployment over older installed fiber with poor transmission characteristics. Veeco Introduces Dimension Edge Atomic “Most of the 100G coherent trials announced Force Microscope System in the past are not real time solutions and are 2010-03-16 only testing the optics; the data is acquired on a digitizing oscilloscope and coherent DSP Streamlined Access to Top AFM Performance post-processing is offloaded to a PC,” said Andrew Schmitt, Directing Analyst of Optical at Veeco Instruments Inc., provider of atomic force Infonetics Research. “Opnext’s trial is different microscopy technology to the nanoscience because they are demonstrating a real-time community, announced today the Dimension solution implemented in hardware for the Edge Atomic Force Microscope (AFM) System toughest part of the 100G coherent transport for physical and life sciences investigation. problem.” This latest offering follows five major AFM “Bandwidth requirements have increased releases from Veeco in 2009 alone, and offers significantly faster than capacity in recent years the best-in-class performance of the Dimension and faster transmission speeds will provide Icon(R) in a simplified package with a compact carriers with the ability to move more data over footprint. Nanoscale researchers now can essentially the same infrastructure,” said Mike utilize the top levels of AFM capability at lower Chan, President of the Opnext’s Subsystems system costs and with streamlined operation. business unit. “The latest consumer and “We continue to develop and release business applications such as HD video- revolutionary new AFM products, modes and on-demand, user-generated video, video system improvements aimed at enabling our gaming, video teleconferencing and software customers to push scientific boundaries and as a service will continue to drive the need for set new standards in their work,” said David greater bandwidth. Ever faster internet access Rossi, Vice President and General Manager speeds enabled by 4th generation wireless and of Veeco’s AFM Business. “We also want to
April/May 2010 www.compoundsemiconductor.net 227 news digest ♦ compound semiconductor break down the cost and productivity barriers Peregrine Semiconductor Corporation, supplier facing today’s researchers. With the Dimension of high-performance RF CMOS and mixed- Edge, Veeco again shows its dedication signal communications integrated circuits to making nanoscale materials and device (ICs), today announced the expansion of its characterization accessible to every facility and European design and manufacturing operations user.” and the opening of a new facility located in Aix- en-Provence, France. Peregrine Semiconductor About Dimension Edge Europe (PSE) operations include RF integrated The mid-priced Dimension Edge AFM features circuit (RFIC) design and engineering at its hardware and software advances that reduce design center in Aix-en-Provence, France; the time required to produce expert-level IC wafer manufacturing from wafer foundry data, providing a seamless path from sample Sapphicon in Australia and UMC in Taiwan; assembly and packaging from Hybritech placement through optical identification of the region of interest, and from AFM survey Composants Microelectroniques (HCM) France; and back-end testing at partner Rood mode to zoomed-in feature identification. The system’s proprietary closed-loop and drift- Microtec in Germany. PSE activities will focus compensated stage allow the productivity, on developing new RFIC products of European accuracy, and sample versatility advantages content to better support specific European of a large-sample, closed-loop system to be design requirements, as well as providing combined with the acquisition of high-resolution design services for Peregrine’s next-generation images traditionally only achieved by small- UltraCMOS RFIC portfolio sold worldwide. sample, open-loop systems. With lower noise levels, the Dimension Edge AFM system “Some of the world’s most visionary RF permits collection of the finer details critical to designs originate in Europe, and Peregrine’s proper material identification, while protecting UltraCMOS technology provides the ideal RF fragile tips and samples, and diminishing tip front-end solution” artifacts. “We are extremely pleased to be expanding This core performance, along with a wide our commitment to a country, and a region, offering of AFM modes, give the Dimension which have been instrumental to the worldwide Edge the exceptionally accurate imaging adoption of UltraCMOS silicon-on-sapphire and single-point spectroscopy capabilities (SOS) as the IC process technology of choice required for many applications, including the for RF designs,” commented Jim Cable, CEO characterization of solar and semiconductor and president of parent-company Peregrine devices, the mapping of heterogeneous Semiconductor Corporation. “In a time of polymer-based materials, interrogation of widespread economic turmoil, Peregrine is individual nanoparticles, and in situ imaging of among the exceptions in being able to post life science samples from single molecules to positive revenue growth and expand our whole cells. design and manufacturing capabilities to further demonstrate our commitment to the European RF engineering community. We are very encouraged by the support of our customers as Peregrine Semiconductor Expands well as the talented staff that have joined us,” European Operations 2010-03-10 he concluded. Peregrine Semiconductor Europe operates UltraCMOS RFIC design, manufacturing and as a subsidiary of Peregrine Semiconductor sales centered in Aix-en-Provence, France Corporation under the direction of Pascal LeBohec. Mr. LeBohec also manages
228 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest international sales for Peregrine’s high- NITRONEX STRENGTHENS SALES FORCE reliability IC business, which originated more IN NORTH AMERICA than a dozen years ago and continues today 2010-03-10 with customers such as Astrium, Thales Alenia Space, and Tesat and RUAG, all Nitronex, a leader in the design and member-companies of the European Space manufacture of gallium nitride (GaN) based RF Agency (ESA) which recognized the market- solutions for high performance applications in leading performance benefits of UltraCMOS the defense, communications, and industrial by qualifying Peregrine’s phase-locked loop & scientific markets, announced today the frequency synthesizers (PLLs) for adoption into addition of a key sales director and strategic their space satellite programs. Today, Peregrine partnerships with three premier sales devices are in flight with some of the world’s representative firms. These recent sales largest satellite programs, including Globalstar, additions are part of Nitronex’s overall strategy ExoMars, Glonass and Gallileo. to expand sales and customer support in North America. “I am proud to be part of a globally conscious company that invests in the creation of jobs Nitronex has recruited Diane DuVall as Director and opportunities to develop specific strengths of North American Sales. Recently, Ms. DuVall in support of its European customers,” said set up sales, marketing and operations across Mr. LeBohec. “Some of the world’s most the U.S. and Canada at Navman Wireless. visionary RF designs originate in Europe, and Ms. Duvall has also held senior sales director Peregrine’s UltraCMOS technology provides positions at Jazz Semiconductor, Skyworks the ideal RF front-end solution,” he added. Solutions and Conexant Systems. The first devices originating from the new European operation are world-class, next- “I am excited to join Nitronex at a key time of generation PLLs, which provide exceptional its growth and to help bring a strategic account RF performance demanded by the rigors sales focus,” said Diane DuVall. of rad-hard space and other high-reliability applications. In addition to its broad “This appointment demonstrates Nitronex’s performance benefits, there are fundamental overall dedication to having a world class sales properties of UltraCMOS technology which force,” said Gary Blackington, Vice President make it exceptionally green: devices built of Sales. “We are committed to accelerating on CMOS-based UltraCMOS consume our penetration into the North American Military dramatically less power than high-voltage Communications and Electronic Warfare processes such as SiGe or GaAs; and enable markets, and we continue to support the high levels of monolithic integration, resulting strong gallium nitride (GaN) market growth. in smaller die, fewer external components This growth trend has been anticipated by in the design and less eWaste. In particular, Nitronex and we are, and will remain, proactive while Reduction of Hazardous Substance in providing superior technology and customer (RoHS) initiatives across Europe are pressing support to our key customers in our target the strict prohibition of carcinogens such as market segments.” gallium-arsenide and its associated arsenic slurries, UltraCMOS RFICs, manufactured Nitronex has also partnered with TAI with a sapphire substrate, offer a more Corporation, Tri-Tech Electronics and Thom environmentally friendly option to forward- Luke Sales, three major sales representative looking, earth-conscious engineering teams. organizations in North America, to assist Ms. DuVall in accelerating the sales and customer support activities.
April/May 2010 www.compoundsemiconductor.net 229 news digest ♦ compound semiconductor
“We are very pleased to be representing applications, today announced two new high Nitronex in Maryland and Virginia,” said Ed linear power amplifier (PA) modules that feature Mihok, president of TAI Corporation. “Nitronex’s low power consumption and improves signal GaN technology is important to TAI’s quality for WiMAX and WiFi applications that penetration into the military customers in our operate in the 2GHz range. This PA series territory, and we are excited about our future as features high linear Pout for good linearity and part of the Nitronex team.” low distortion, high power added efficiency (PAE), as well as input and output pre-match “We were very excited when we were chosen for matching and application simplicity. Avago’s by Nitronex to represent them in the Upstate MGA-43x28 PA module series, which are New York territory,” said Jeff Pauly, President housed in a miniature 5 by 5 by 0.85 mm of Tri-Tech Electronics. “Nitronex is one of the package, are ideal for use as a final stage PA in fastest-growing RF device companies in our a wide range of high power WiMAX, WLAN and territory and we are thrilled to be a part of their LTE applications which operate in the 2300 to current and future success in our market.” 2700MHz spectrum.
The MGA-43x28 PA modules have the same “We see great potential for Nitronex’s GaN package footprint, pin-out and external power devices in the Arizona and New Mexico matching network to allow a common printed market,” said Joe Marvin, Managing Partner at circuit board (PCB) design when used at Thom Luke Sales. “Nitronex’s unique approach different frequencies. Additionally, this series to putting GaN-on–Silicon combined with our of PAs from Avago comes with an integrated innovative approach to selling will provide a bypass switch controlled attenuator which valuable resource within our customer base.” provides attenuation of ~24.0dB, along with a built-in power detector. In a typical “We are proud to have recruited such a operating environment of 5-volts and 1 Amp, seasoned and talented sales executive and the MGA-43228 delivers performance of outstanding sales representative partners,” 29.1dBm linear Pout at 2.5 percent error said Gary Blackington. “The companies vector magnitude (EVM), 38.5dB gain and 16 we are partnering with are vital to the rapid percent PAE at 2400MHz. Under the same implementation of our strategic sales and operating conditions, the MGA-43328 delivers marketing plans. They all have proven track a performance of 29.3dBm linear Pout at 2.5 records for success and are among the world’s percent EVM, 37.3dB gain and 16 percent PAE best sales firms.” at 2600 MHz. These features enable the MGA- 43x28 series PAs to provide superior signal quality for computer performance evaluation Miniature High Linearity Wireless Data (CPE) while transmitting at a higher throughput Power Amplifiers for WiMAX and WiFi to reduce power consumption. Applications Key Features 2010-03-10 •Miniature size: 5 by 5 by 0.85 mm Avago Technologies Announces Pair of •Advanced GaAs E-pHEMT technology Miniature High Linearity Wireless Data Power •5V power supply (can be used at 3.3V for Amplifiers for WiMAX and WiFi Applications lower supply voltage applications) •Built-in detector and shutdown switches Avago Technologies a leading supplier •MSL-2a and lead-free of analog interface components for communications, industrial and consumer Pricing and Availability
230 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Avago’s MGA-43228 and MGA-43328 PAs are applications,” said Mr. Leo Huang, founder, priced at $7.49 each in minimum quantities of CEO and chairman of Chroma and founder of 1,000. Samples and production quantities are Testar Electronics Corporation. “We recognized available now through Avago’s direct sales early on that LED chip manufacturers have channel and worldwide distribution partners. limited testing capability and must comply with evolving standards. By outsourcing LED testing, customers benefit from increased Testar Expands LED Chip Testing Services efficiency and improved quality, ensuring that 2010-03-10 manufacturers can achieve competitive prices for their high-grade chips.” Demand for Energy Efficient Light Emitting “Testar is ideally positioned to take advantage Diode (LED) Technology Fuels New Testing of the vast business opportunity in LED Services Sector testing services,” said Peter Liu, Chairman of WI Harper Group. “The insatiable demand Testar Electronics Corporation, specialists in for LEDs is placing pressure on chip testing and optimizing Light Emitting Diode manufacturers to increase throughput and (LED) chips and a subsidiary of Chroma ATE Testar plays a critical role in this strategic Inc., today announced it has signed definitive market.” Testar continues WI Harper’s LED agreements to become an independent entity investment program that includes LED chip and to receive an institutional investment maker SemiLEDs Corp. and LED emitter, light from WI Harper Group. This infusion of capital engine and fixture provider NeoPac Lighting allows the 3-year old subsidiary to expand its Group. operations and further establish its leadership role in providing testing services for LED chip manufacturers across Asia. New Single/Dual White LED Flash Driver “We recognized early on that LED chip 2010-03-10 manufacturers have limited testing capability and must comply with evolving standards. By austriamicrosystems’ New Single/Dual White outsourcing LED testing, customers benefit LED Flash Driver Improves Picture Quality from increased efficiency and improved quality, in Mobile Phones and Digital Still Cameras ensuring that manufacturers can achieve austriamicrosystems, a leading global designer competitive prices for their high-grade chips.” and manufacturer of high performance analog ICs today announced the AS3645 LED The ever-increasing demand for energy flash driver. This inductive, ultra small, high- efficient and cost effective lighting is driving efficiency single/dual LED flash driver offers the rapid growth of LEDs to support a range 25 per cent higher output current than existing of applications such as LCD-TV backlighting, equivalents. The higher flash power enhances laptop PC and computer screen backlighting picture and video quality especially in low light and general illumination. Industry analyst environments at same system size. iSuppli projects shipments of LEDs to nearly triple over the next three years from 63 billion in The AS3645 inductive flash driver drives up to 2010 to 166 billion in 2013. 1000 mA and can be used in single LED flash or double LED flash environments. The high- This proliferation of LED-related products is side current source works with up to 2x500 creating a new professional services sector: mA with two LEDs in serial configuration and LED chip testing. “LEDs are now used in up to 720 mA with one LED. When driving street lighting, consumer electronics such as two LEDs in series, LEDs draw identical backlit TVs, vehicles and numerous unique
April/May 2010 www.compoundsemiconductor.net 231 news digest ♦ compound semiconductor currents and provide output light matching and the most reliable source for the procurement, thermal dissipation. The AS3645 auto detects fabrication, and reclaim of cadmium containing whether to employ single or dual LED mode materials. Atlumin’s partnerships with both MCP and enables direct one-button flashlight mode. and Floridienne allow them to provide a unique A number of safety features protect against turnkey solution for all minor metals used by circuit damage and improve test time, including solar manufacturers in both CdTe and CIGS programmable current limiting, auto test technologies. (LED open/short detection), overvoltage and undervoltage, overtemperature and automatic Solar module manufacturers welcome the cost flash timeout timer for thermal LED protection and time savings that the Atlumin - Floridienne during flash. partnership enables. Previously, the supply chain involved several different organizations, These features suit the needs of a camera each handling a piece of the cycle. Now, phone flash, especially in smart phones Atlumin sources, refines, fabricates, and and feature-phones. For other devices with supplies products. All this is done by managing cameras, including digital still cameras, regulatory details in an environment friendly camcorders and PDAs, the AS3645 flashlight closed loop system. Gregory Phipps, President driver is a perfect solution. Its high efficiency 2 of Atlumin notes: “this gives us opportunity MHz fixed frequency DC-DC boost converter to further compress the supply chain and with soft start allows small inductors and create unique offerings for our customers. Our enables easy integration into noise sensitive clients can focus on their core technology and RF systems. The high power LED flash current development while we streamline and manage source can operate in flash, torch and assist the supply chain. We are pleased that our (video) light mode. An additional current source new partnership helps solar manufacturers to drives an optional indicator LED. Control can minimize their capital investment and increase be implemented through either the parallel watts per unit cost.” interface mode to allow simple integration, or the I2C interface to allow more sophisticated A key issue with cadmium in solar is the control of all settings like currents and timings. potential environmental ramifications, if The interface is selected by a dedicated pin mishandled. Atlumin and Floridienne, both are (I2C/EN). recognized leaders in clean materials handling. Atlumin has a rigorous closed loop system for The AS3645 is available in a tiny WL-CSP all its minor metals, ensuring maximum use package (3x4 balls 0.5 mm pitch, 2x1.6 mm) and reuse of these metals. Floridienne has a and has an operating temperature range of -30° long-standing reputation for its zealous pursuit to +85°C (ambient). of clean materials processing. Simon Vlajcic, Managing Director of Floridienne notes: “the unwavering commitment of both Atlumin and Atlumin and Floridienne accelerate growth Floridienne to environmental responsibility is of solar technology based on known, well defined and controlled 2010-03-10 processes at work. Perhaps the most gratifying result of our new partnership with Atlumin is Atlumin Energy, a leading supplier of minor the ability to assure solar manufacturers and metal-based products to solar module their clients that environmental issues are being manufacturers, has established a partnership managed by two highly committed companies with Floridienne, the largest cadmium supplier supplying the solar industry.” and reclaimer in the world for over 30 years. Atlumin Energy manufactures materials for the renewal energy market, including solar module This partnership solidifies Atlumin’s position as
232 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest manufacturers, with a focus on increasing instead focus on our existing businesses and efficiency. Atlumin products range from key other strategic opportunities available to II-VI.” elements, alloys, and specialty chemicals, to engineered fabrications, such as sputtering “We feel Zygo is a strong fit with II-VI’s strategic targets. Metals include cadmium, copper, plans and growth initiatives and strongly gallium, indium, molybdenum, selenium, believe that the Zygo shareholders, customers and tellurium. Atlumin also offers advanced and employees could have benefited from a recycling and reclaim programs. Atlumin is combination with II-VI,” added Mr. Kramer. headquartered in New Hartford, New York, USA “We were prepared to pay what we believed and manufactures in the Federal Republic of to be full and fair value for Zygo and then work Germany, the United Kingdom, and the United diligently toward a successful combination. We States. Atlumin is a subsidiary of the MCP- were surprised and disappointed that, despite Group, a global metals supplier since 1929. the fact that our offer was at a substantial premium and that we were willing to permit Floridienne is a Belgium based company each shareholder to opt for either cash or II-VI with activities in minor metals, chemicals, stock, it was dismissed without giving us the biotechnology, agro-foods and venture capital opportunity to discuss its merits directly with investments. It is the biggest producer and Zygo’s Board of Directors.” reclaimer of cadmium based materials for solar, batteries and metallurgical applications. Zygo, on February 16, 2010, issued a press It is also a major player in the manufacture release stating that its Board of Directors had and reclaim of zinc, lead, and nickel based unanimously rejected the II-VI proposal. materials.
SiGe Semiconductor introduces the II-VI Withdraws Proposal to Acquire Zygo industry`s first Silicon-based high power Corporation for $10.00 Per Share and 2GHz 802.11bgn WLAN Power Amplifier 2010-03-10 Ceases Acquisition Efforts 2010-03-10 SE2576L delivers complete area coverage for II-VI Incorporated announced today that fast-growth networking applications including it is withdrawing its proposal to acquire all Internet-enabled television and in-home video the outstanding common shares of Zygo distribution SiGe Semiconductor, Inc. has Corporation for $10.00 per share. II-VI launched the SE2576L, a 2.4GHz Wireless submitted an offer to Zygo’s Board of Directors LAN power amplifier (PA) module. The new on January 5, 2010. At the time the offer was IEEE 802.11bgn device is the industry’s made, it represented a premium of 46% to the smallest and most efficient power amplifier then 30-day trading average of Zygo shares. operating at 26dBm. The SE2576L targets applications requiring high RF transmit power such as residential video and data transport, Francis J. Kramer, II-VI’s President and Chief enterprise and outdoor networks as well as Executive Officer, said, “II-VI’s desire was public hotspots, delivering complete area to proceed in a friendly manner. Given the coverage and improved link budgets for more reluctance of Zygo’s Board of Directors to effective broadband data services. share with us the prospects of their strategic plan for creating shareholder value and their unwillingness to even enter into discussions with us regarding our proposal, we have decided to withdraw our offer for Zygo and
April/May 2010 www.compoundsemiconductor.net 233 news digest ♦ compound semiconductor
The SE 2576 features a temperature compensated, load insensitive power detector with 20dB of dynamic range and
Microsemi Extends Advanced Silicon Carbide Portfolio 2010-03-10
With 1,500 Watt RF Power Transistor for UHF Pulsed Radar Provides High Performance for Next-Generation Military/Aerospace Commenting on the new device, Jose Harrison, Applications Director, Product Marketing, Computing, Networking and Consumer WLAN at SiGe Microsemi Corporation (Nasdaq:MSCC), a said, “We designed the SE2576L with a focus leading manufacturer of high performance on ease-of-use and maximum flexibility. This analog mixed signal integrated circuits and high PA module allows our customers to lower their reliability semiconductors, announced today development, qualification and certification the introduction of a new 1,500 watt RF power costs. Most importantly, it assists them in transistor for UHF pulsed radar applications, reducing time to market for incorporating expanding its industry-leading portfolio of high WiFi™ functionality into a range of previously power silicon carbide transistors. un-networked products.” Designated the Model 0405SC-1500M, the The challenge facing high-power WLAN new device from Microsemi’s RF Integrated connectivity resides with the RF power Solutions group, utilizes state-of-the-art SiC amplifier. As the PA operates for a period of technology to provide unparalleled 1,500W time at higher RF power levels, the PA itself peak power performance in a compact single- tends to increase in temperature. As the PA ended package that replaces complex push- increases in temperature, its ability to maintain pull balun circuitry found in conventional silicon the desired RF power level degrades. This in BJT or LDMOS solutions. turn causes the PA control loop to increase RF power, which results in further increases to the “We are very excited to lead the market with operating temperature of the PA. In addition to this silicon carbide broadband transistor reducing RF power, increased PA temperature specifically designed for UHF Band pulsed degrades linearity performance, corrupting radar in military and aerospace applications,” the transmitted data as well as creating said Charles Leader, Microsemi RFIS Vice interference in nearby WiFi™ frequency President. “This new 1,500 watt device channels. demonstrates our ability to extend this advanced technology through aggressive The SE2576L is fabricated in silicon investment. We now can support next- germanium, a technology nearly identical to generation UHF radar designs with a full series standard silicon and three times more thermally of silicon carbide transistors having powers conductive than GaAs. The SE2576L integrates rated at 100 watts, 500 watts, 1000 watts and the input match and the external output match now the 0405SC-1500M at 1,500 watts. to adjust the load line for 5V, 26dBm operation -.enabling simplified design, enabling quicker The 0405SC-1500M is a high performance, time to market and higher production yield for common gate, class AB, high power transistor SiGe’s customers. designed for UHF frequencies from 406 to 450
234 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
MHz. It is built with 100% gold metallization and available on the Microsemi website at http:// gold wires in a hermetically sealed package www.microsemi.com. providing highest reliability for weather radar and over the horizon radar applications.
System Benefits with 0405SC-1500M SiC Order for a research machine in Germany transistors: 2010-03-09
-- Single-ended simple impedance-matching RIBER, the global leader for molecular beam design replaces complex push-pull balun epitaxy (MBE), announces the sale of a circuitry Compact 21 to IHP laboratory (Innovation of -- Industry’s highest peak power for reduced High Performance Microelectronics), based in system power: 4-way combination yields 5kW Frankfurt (Oder) in Germany. with margin -- High operating voltage slashes power supply As a European research and innovation size and dc current demand center, the IHP actively co-operates with -- Low conducting current minimizes system numerous industrial and academic partners noise effect within the framework of high performance -- Extremely rugged performance improves microelectronics and communication system yields technology research. In particular, the -- 50% smaller size than equivalent silicon laboratory develops specific expertise devices in material research and technological -- All gold metallization and gold wire for developments, as well as circuit and system military grade long term reliability design. -- Hermetic, solder-sealed packaging extends lifetime operation This order will significantly increase its applied technology research and development The 0405SC-1500M transistor utilizes new chip capabilities. design and processing enhancements to offer state-of-the-art performance, notably in high The system sold to IHP will thus be equipped power, small transistor and circuit size over the with a gas injector and be devoted to the development of graphene-based applications. specified frequency range with 300us pulse width and 6% duty cycle. Graphene is a highly promising new material for the development of many innovative 0405SC-1500M Key Product Features: applications, such as the production of a new generation of ultra-fast transistors. -- Designed for 406 -- 450 MHz UHF radar -- Medium Pulse Format: 300 us, 6% Compact 21 is the MBE research system -- 1,500 watt output power that has sold the most units in the world. It is -- High power gain: 8 dB Typ highly flexible and offers great adaptability to -- Drain efficiency: 45 % @450MHz meet the most demanding specifications of -- Compression: In Compression applied research on compound semi-conductor -- Vdd: +125V materials. -- Ruggedness capable of VSWR-T 5:1 This order will consolidate RIBER’s position in Demo units for the entire line of Microsemi the German market and confirms its significant silicon carbide transistors are available now by expertisein semi-conductor research. contacting the factory or by email request to [email protected]. Technical datasheets are
April/May 2010 www.compoundsemiconductor.net 235 news digest ♦ compound semiconductor
OPEL Solar, Inc. and BETASOL Secure grid, increasing revenue for BETASOL. The Spanish Feed-In Tariff for One of World’s installation is located in the Tarragona region of First Commercial HCPV Power Installations Spain, a prime locationfor solar development. 2010-03-09 OPEL built the installation with its Mk-I high Utility Grade Solar Farm of 330 kW Delivers a HCPV solar panels mounted on dual axis 20-Year Revenue Stream for Owner trackers. The combination of OPEL’s HCPV panels and precision dual axis trackers results OPEL Solar, Inc., a leading global developer in a higher powerproduction per unit of land and supplier of high concentration photovoltaic (acre/hectare) than silicon or thin film flat (“HCPV”) solar panels and other solar products, panels with a potential to increase photovoltaic including ground-based and rooftop tracker yields by up to 40 percent. systems, and its Spanish partner, BETASOL, today announced that its 330 kilowatts (kW) utility-grade solar photovoltaic power plant in Spain is eligible to begin receiving the feed-in 5N Plus Inc. and Teck Metals Ltd. enter into tariff (“FIT”) from the Spanish Government. This supply agreements for Germanium and makes the OPEL Solar project one of the first indium feedstock HCPV installations to be recognized with an FIT 2010-03-10 and guaranteed investment rate of return. 5N Plus Inc. (TSX:VNP), a leading producer The Spanish listing is called, the Photovoltaic and provider of high-purity metals and Allocation Registry, and was published in compounds for electronic applications, is mid-February 2010. It denotes those projects pleased to announce that its wholly-owned approved for the feed-in tariff starting in the subsidiary Firebird Technologies Inc. (“Firebird”) has entered into long-term supply agreements first quarter of 2010. The Vilalba del Arcs solar for germanium and indium feedstocks with Teck farm is on the approved list. As one of the first commercial HCPV installations, the 330 kW Metals Ltd. (“Teck”), a wholly-owned subsidiary site using OPEL Solar leading edge technology of Teck Resources Ltd. (TSX: TCK.A and will be eligible for a FIT of 28.1 Eurocents per TCK.B, NYSE: TCK), a world-leading producer kilowatt of electric power generated. The FIT of base metals and minor metals. will be provided for a 20-year period. “The approval of the Vilalba del Arcs utility solar farm Under the terms of these agreements, Teck will for the Spanish Feed-In Tariff Program is a provide a long term stable supply to Firebird of germanium and indium feedstocks which are significant business milestone for OPEL Solar and its HCPV technology,” said Robert Pico, to be further processed by Firebird into value- CEO of OPEL Solar, Inc. “This demonstrates added products. that HCPV is a viable technology for generating electricity from the sun at utility scale levels and 5N Plus President and Chief Executive Officer for providing guaranteed revenue to its owners, Jacques L’Écuyer said, “We are pleased to such as BETASOL in this case.” Pico added report that these important agreements have “From an investment viewpoint, this project been signed, which follows the memorandum offers a very attractive rate of returnto any of understanding with Teck that we announced investor.” in December 2009. Supply of these critical feedstocks will provide our subsidiary Firebird with the required precursors for its value-added This utility grade solar farm is one of the first products, which are to include semiconductor operable solar grid fields in the world using OPEL’s HCPV leading edge solar technology. wafers, semi-finished optics and high-purity It generates 330 kW of electricity to the power metals and compounds. Teck is one of the most
236 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest important producers of indium and germanium AG, a euro 60 million global machine vision worldwide and we expect the stability of technology company based in Germany. Prior Firebird’s supply chain to be viewed as a to that he was Manager, Global Business differentiating asset by our customers.” Development at NDC Infrared Engineering, a $60 million global operating unit of Spectris About 5N Plus Inc. PLC, London, which specializes in physics- based, online sensors used to manufacture 5N Plus draws its name from the purity of its hygienic and medical non-wovens, plastics, products, 99.999% (five nines or 5N) and more. packaging, pharmaceuticals and foods. 5N Plus, which has its head office in Montreal, Between 1998 and 2005, Mr. Riccardi held a Québec, develops and produces high- variety of management, business development purity metals and compounds for electronic and product development marketing positions applications and provides its customers at Cognex Corporation in their Surface with recycling solutions. The Company is an Inspection Systems Division. He also spent 15 integrated producer with both primary and years in a variety of sales and management secondary refining capabilities. 5N Plus focuses positions in the Industrial Systems Division of on specialty metals such as tellurium, cadmium Measurex Corporation. and selenium and on related compounds such as cadmium telluride and cadmium sulphide. “John is a highly experienced and effective The Company’s products are critical precursors business development and sales manager in a number of electronic applications, with a proven track record of national and including the rapidly-expanding solar (thin-film international accomplishments,” commented photovoltaic) market, for which 5N Plus is a Richard (Rick) Kurtz, API’s CEO. “We are major supplier of cadmium telluride, and the eager to utilize his expertise by tapping radiation detector and thermoelectric markets. into his knowledge of our markets. With his experience in the nuclear gauge industry, where Measurex is now the market leader (acquired by Honeywell), as well as his Advanced Photonix, Inc. Hires National significant background in quality control and his Sales Account Manager for Terahertz vast understanding of the use of vision systems Product Platform to find defects in the surface of products that 2010-03-09 are optical in nature, we know that his ability to strategize new opportunities for the Company Industry Veteran Brings Nuclear Gauge, will be a valuable asset as we move forward to Product Quality and Vision System Experience expand our Terahertz product platform.” to New Role “Advanced Photonix has an outstanding Advanced Photonix, Inc. (R) (NYSE Amex: reputation in the industry,” commented Mr. API) announced today that it has hired John Riccardi. “I look forward to driving the sales J. Riccardi, who has more than 25 years of initiative for the Terahertz product platform, national and international experience in capital leveraging its reach in its current marketplace, equipment technology sales, for the new expanding the platform’s visibility, and position of National Sales Account Manager for developing new markets for the high-quality, its Terahertz product platform, effective March high-performance products.” 1, 2010.
Most recently Mr. Riccardi has been Director of Global Business Development and North American Sales Director for ISRA Vision
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Microsemi Extends Advanced Silicon transistors: Carbide Portfolio With 1,500 Watt RF Power * Single-ended simple impedance-matching Transistor for UHF Pulsed Radar 2010-03-09 design replaces complex push-pull balun circuitry Provides High Performance for Next- * Industry’s highest peak power for reduced Generation Military/Aerospace Applications system power: 4-way combination yields 5kW with margin * High operating voltage slashes power supply Microsemi Corporation, a leading manufacturer size and dc current demand of high performance analog mixed signal * Low conducting current minimizes system integrated circuits and high reliability noise effect semiconductors, announced today the * Extremely rugged performance improves introduction of a new 1,500 watt RF power system yields transistor for UHF pulsed radar applications, * 50% smaller size than equivalent silicon expanding its industry-leading portfolio of high devices power silicon carbide transistors. * All gold metallization and gold wire for military
grade long term reliability Designated the Model 0405SC-1500M, the * Hermetic, solder-sealed packaging extends new device from Microsemi’s RF Integrated lifetime operation Solutions group, utilizes state-of-the-art SiC technology to provide unparalleled 1,500W The 0405SC-1500M transistor utilizes new chip peak power performance in a compact single- design and processing enhancements to offer ended package that replaces complex push- state-of-the-art performance, notably in high pull balun circuitry found in conventional silicon power, small transistor and circuit size over the BJT or LDMOS solutions. specified frequency range with 300us pulse width and 6% duty cycle. “We are very excited to lead the market with this silicon carbide broadband transistor 0405SC-1500M Key Product Features: specifically designed for UHF Band pulsed radar in military and aerospace applications,” * Designed for 406 – 450 MHz UHF radar said Charles Leader, Microsemi RFIS Vice * Medium Pulse Format: 300 us, 6% President. “This new 1,500 watt device * 1,500 watt output power demonstrates our ability to extend this * High power gain: 8 dB Typ advanced technology through aggressive investment. We now can support next- * Drain efficiency: 45 % @450MHz * Compression: In Compression generation UHF radar designs with a full series * Vdd: +125V of silicon carbide transistors having powers * Ruggedness capable of VSWR-T 5:1 rated at 100 watts, 500 watts, 1000 watts and now the 0405SC-1500M at 1,500 watts. Demo units for the entire line of Microsemi silicon carbide transistors are available now by The 0405SC-1500M is a high performance, contacting the factory or by email request to common gate, class AB, high power transistor [email protected]. Technical datasheets are designed for UHF frequencies from 406 to 450 available on the Microsemi website at http:// MHz. It is built with 100% gold metallization and www.microsemi.com. gold wires in a hermetically sealed package providing highest reliability for weather radar and over the horizon radar applications.
System Benefits with 0405SC-1500M SiC
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Finisar Corporation appoint Kurt Adzema as available to all of the Company’s executive Senior Vice President and Chief Financial officers. Officer 2010-03-09 Jenoptik Group opens laser application On March 2, 2010, the Board of Directors center in Korea. of Finisar Corporation (the “Company”) 2010-03-09 appointed Kurt Adzema, age 40, to serve as the Company’s Senior Vice President and Chief Customers and interested parties in the areas Financial Officer. of electronic, flat panel as well as photovoltaics and automotive can test and further develop Steve Workman, who has served as the production processes and lasers. Company’s Chief Financial Officer since joining the Company in 1999 prior to its initial public The official opening of the new sales, offering, will assume the role of Senior Vice application and service site took place today. President of Corporate Development and Customers and partners were presented Investor Relations. These changes will become the entire product spectrum of the Lasers & effective upon the filing of the Company’s Form Material Processing as well as Optical Systems 10-Q report for the quarter ended January 31, divisions. 2010.
Mr. Adzema has served as the Company’s Vice President of Strategy & Corporate Development since joining the Company in January 2005. Prior to joining the Company, he held various positions at SVB Alliant, a subsidiary of Silicon Valley Bank which advised technology companies on M&A transactions, at Montgomery Securities/Banc of America Securities, an investment banking firm, and in the financial restructuring group of Smith Barney. Mr. Adzema holds a BA in Mathematics from the University of Michigan and an MBA Jenoptik Chairman of the Executive Board Dr. from the Wharton School at the University of Michael Mertin and CFO Frank Einhellinger Pennsylvania. opened the new laser application center in the presence of around 100 invited guests from Mr. Adzema will receive compensation in business and politics, among them numerous accordance with the Company’s executive customers and partners of the Jenoptik compensation package, and is eligible to Group in Asia. “This moves our process of participate in the Company’s Executive internationalization a major step forward. Direct Retention and Severance Plan, all as described market access and a trained service team are in the Company’s definitive proxy statement indispensable for complex systems. With the for its annual meeting of stockholders held on new center, we have laid the foundation for November 18, 2009, which definitive proxy further business activities of all divisions of the statement was filed with the Securities and Jenoptik Group,” said Michael Mertin at the Exchange Commission on October 8, 2009 and opening. is available at http://www.sec.gov . In addition, Mr. Adzema will enter into the Company’s Customers and interested parties from across standard indemnification agreement made Asia can now test lasers and laser applications
April/May 2010 www.compoundsemiconductor.net 239 news digest ♦ compound semiconductor for their own production environments on develop individual technological solutions on site with their own materials and refine the the systems, manufacture pilot runs and small processes together with Jenoptik engineers. batches and commission feasibility studies. Jenoptik invested $4.4 million (approx. €3.4 million/5.4 billion Korean Won) in the laser There are plans to expand the application application center in the southern Korean city of center with additional laser systems in the Pyeongtaek (Gyeonggi province, 70 km south coming months as part of the expansion of of Seoul). JENOPTIK Korea Corporation Ltd. Within a short time, JENOPTIK Korea Corporation Ltd. The application center is sited on a campus has already positioned itself as a partner for shared with Telstar-Hommel Corp., a long- the entire Asian growth market. The company standing Jenoptik joint venture partner in the has eight employees and, in addition to the Industrial Metrology division. Together with application center, is in charge of all after-sales Telstar-Hommel Corp., Jenoptik founded service in Asia together with other Jenoptik JENOPTIK Korea Corp. in July 2009 and built companies, e.g. in Japan. A total of over 60 the new application center in only four months. laser systems for various applications are The Jenoptik Executive Board gave special currently in use in Asia. thanks to Buyng-Hoon Im, president and CEO of Telstar-Hommel: “We have an experienced 14 further systems have been commissioned partner in Telstar-Hommel. Without the close and will be delivered or installed in the coming and intensive collaboration, we would not have months. JENOPTIK Korea Corporation Ltd. been able to build the laser application center achieved its first successes quicker than so quickly and successfully,” said Michael expected and received new orders worth a total Mertin and Frank Einhellinger in their opening of around €5 million in recent months. speech. Jenoptik Group expanding presence in Asia. Lasers and laser processing systems available According to preliminary figures, sales of the for extensive tests, process development and Jenoptik Group in Asia comprised just under 8 pilot and small production runs. percent of overall sales of around €470 million in 2009, just under 10 percent of overall sales Over an area of approx. 500 square meters, in the Lasers & Optical Systems segment were the laser application center has initially in Asia. “We see more great potential for the been equipped with two laser systems overall Group in Asia. With our direct local for processes in the electronic as well as presence, we can now approach the market photovoltaics and flat panel industries: the better and more intensively. In the current year, JENOPTIK VOTANTM Semi 300 is designed we are again expanding our activity in Asia,” for machining wafers (Si, GaAs or SiC) and says Jenoptik boss Dr. Michael Mertin. In Asia, thus also for ultra-precise applications in clean the Jenoptik Group currently has a total of room environments. The special separation about 150 employees in own or joint venture process developed by Jenoptik, so-called TLS- companies and, in addition to Korea, is also DicingTM (TLS = Thermal Laser Separation), present in China and Japan. enables the quick, efficient and damage-free separation of semiconductor wafers. With The business contacts in Korea are attributable the JENOPTIK VOTANTM Advanced laser to the Industrial Metrology division of the system, the TLS process specifically addresses Jenoptik Group, which has already been the photovoltaics and flat panel industry for represented there for over 25 years. Customers industrial cutting (called separation) of thin- of Industrial Metrology include renowned film solar cells and display glass. In addition to automobile manufacturers and suppliers such tests, customers and interested parties can also as KIA, Hyundai and GM Daewoo.
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Facts & figures on the new laser application center “With technology breakthroughs increasing brightness, or lumens per watt, at lower price Start of construction: July 2009 points, the interest in LEDs continues to grow Move-in/handover date: November 2009 dramatically,” said Dave Doherty, Digi-Key’s Formal opening: March 8, 2010 vice president of semiconductor product. “With Area: 500 m2, of which 80 m2 clean room products such as Seoul Semiconductor’s Equipment: JENOPTIK VOTANTM Semi 300 l Acriche AC LED, we are confident a global JENOPTIK VOTANTM Advanced partnership will benefit our customers. Digi- Key’s commitment to providing top-quality Facts & figures on JENOPTIK Korea Corporation Ltd. products continues with the addition of Seoul Semiconductor’s product to our broad product Founded: July 2, 2009 offering.” Partners: Telstar-Hommel Corp (33.3 percent), JENOPTIK AG (66.6 percent) Brian Wilcox, vice president of North American Employees: 8 sales for Seoul, said, “We are pleased to Address: 455-2 Hyeongok, Cheongbuk partner with a distribution leader such as Digi- Pyeongtaek, Gyeonggi, Key on a product opportunity where demand Korea 451-831 is growing with increasing intensity. The Digi- Contact: Mr. Daniel Böhme, President & CEO Key Lighting Partners Program will link our Phone: +82-31-6464-020 customers to the entire eco-system surrounding E-mail: [email protected] the LED, helping them get to market faster.”
About Digi-Key Corporation Digi-Key and Seoul Semiconductor Announce Worldwide Distribution Agreement 2010-03-09
Electronic components distributor Digi-Key Corporation, and LED innovator/manufacturer As one of the world’s fastest growing Seoul Semiconductor have entered into a distributors of electronic components, Digi-Key global distribution agreement. The agreement Corporation has earned its reputation as an includes distribution through Digi-Key of the industry leader through its total commitment full range of Seoul Semiconductor’s products, to service and performance. Digi-Key is a full- from the smallest DC LED to the innovative and service provider of both prototype/design and world’s first AC LED, Acriche™. production quantities of electronic components, offering more than 1.5 million products from “With technology breakthroughs increasing over 400 quality name-brand manufacturers. brightness, or lumens per watt, at lower price A testament to Digi-Key’s unparalleled points, the interest in LEDs continues to grow commitment to service, North American dramatically” design engineers have ranked Digi-Key #1 for
Overall Performance for 18 consecutive years Seoul Semiconductor is a leading innovator (EE Times Distribution Study/August 2009). of high-brightness and energy-efficient LEDs. Additional information and access to Digi-Key’s Products stocked by Digi-Key are available broad product offering is available at www. for purchase on Digi-Key’s global websites. digikey.com. Additionally, these products are slated to be featured in future print and online catalogs.
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About Seoul Semiconductor that includes all necessary components required for CPRI-based optical transceivers that economically connect 3G/4G wireless base station servers to one or more remote radio heads (RRHs) over optical fiber.
Mindspeed(R) has collaborated with EMCORE’S Fiber Optics Division to develop a family of transmit and receive optical Seoul Semiconductor is a world-leading LED subassembly solutions based on Mindspeed’s manufacturer whose growth potential is widely PMD devices. This family of products will allow recognized by industry experts. Forbes and base station servers to transmit over longer Business Week each selected it as “one of the distances and at significantly higher data rates most promising companies in Asia” in 2006 than can be supported with copper links. and 2007, respectively. Its main offering, the Acriche™ LED, was named 2006 “Product “The wireless infrastructure is a rapidly of the Year” by Elektronik, one of the most growing market and we are excited to work prestigious publications in Europe, honored with Mindspeed to develop a family of optical in Newtech Korea 2008 and named as one of components for next-generation base station Korea’s Ten Best New Technologies in 2008. platforms,” said Chris Wiggins, director of sales Seoul Semiconductor’s Intelligent Property and marketing for EMCORE. “By leveraging position is extremely strong with over 5,000 our broad optoelectronic device portfolio, this patents filed or registered and many cross- collaboration effort provides key components license agreements with industry leaders. with optimized performance to our customers. Seoul also has 25 overseas operations, This will significantly reduce the time to market including three subsidiaries, and 114 worldwide of their integrated products.” distributor sites. For more information, visit www.acriche.com. “The industry’s migration to a 3G/4G mobile infrastructure is creating the need for significantly improved base station performance Mindspeed collaborates with EMCORE - not just for baseband processing, but also 2010-03-09 for the links between the main base station server and one or more distributed RRH units,” Mindspeed Debuts Optical Physical Media said Gary Shah, executive director of product Device (PMD) Chipsets for 3G/4G Wireless marketing with Mindspeed’s high-performance Base Stations; Collaborates with EMCORE on analog business unit. “Mindspeed is an industry Subsystems leader in high-speed PMD solutions for fiber- access networks, and now we are applying that Low-Power Chipsets Support Common same expertise to a new generation of power- Public Radio Interface (CPRI)-Based efficient CPRI-enabled optical PMD solutions Solutions That Connect Base Station for 3G/4G base stations. These PMDs join Servers to Remote Radio Heads at High our recently announced Transcede(TM) multi- Data Rates Over Long-Distance Fiber Links core baseband processing SoCs to address key challenges in the next-generation mobile Mindspeed Technologies, Inc. (NASDAQ: infrastructure.” MSPD), a leading supplier of semiconductor solutions for network infrastructure applications, Mindspeed’s CPRI optical PMD chipsets fully today announced a high-performance, low- support the latest CPRI V4.1 2009-02-18 power physical media device (PMD) chipset specification and are optimized for 4.915Gbps
242 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest and 6.144Gbps operation with lower power basestation equipment. consumption compared to the traditional 10Gbps PMD chipsets. They support data To learn more, visit us at www.mindspeed.com. rates from 614.4Mbps to 6144 Mbps over 20km Single-Mode-Fiber (SMF) and 500m About EMCORE Multi-Mode-Fiber (MMF). The receiver solution includes the M02020 transimpedance amplifier EMCORE Corporation offers a broad portfolio (TIA) combined with the M02049 limiting of compound semiconductor-based products amplifier, optimized for 4.915 Gigabits/second for the broadband, fiber optics, satellite (Gbps) or the M02129 TIA, combined with the and solar power markets. EMCORE’s Fiber M02142 limiting amplifier for 6.144Gbps. The Optics segment offers optical components, limiting amplifiers each feature selectable band- subsystems and systems for high speed width for optimal receiver sensitivity across data and telecommunications networks, CPRI rates. On the transmit side, solutions cable television (CATV) and fiber-to-the- include the M02061 laser driver for long-wave premises (FTTP). EMCORE’s Photovoltaics laser diodes and the M02069 driver for short- segment provides products for both satellite wave vertical-cavity surface-emitting lasers and terrestrial applications. For satellite (VCSELs). applications, EMCORE offers high efficiency gallium arsenide (GaAs) solar cells, covered Mindspeed’s CPRI optical PMD chipsets are interconnected cells (CICs) and panels. For available now, along with a small-form-factor terrestrial applications, EMCORE is adapting its reference design for up to 6.144Gbps data high-efficiency GaAs solar cells for use in solar rates. By offering seamless chipset solutions, concentrator systems. For further information Mindspeed’s CPRI optical PMD family enables about EMCORE, visit http://www.emcore.com optical transceiver vendors to get to market quickly with cost competitive solutions that deliver industry leading performance. Mimix Broadband, Inc. Celebrates 10th About Mindspeed Technologies Anniversary 2010-03-08 Mindspeed Technologies, Inc. designs, develops and sells semiconductor solutions Company Looks Forward to Another Decade for communications applications in the wireline Providing Optimal Semiconductor Solutions and wireless network infrastructure, which Worldwide includes today’s separate but interrelated and converging enterprise, broadband access, Mimix Broadband, Inc, a supplier of high metropolitan and wide area networks. Our performance gallium arsenide (GaAs) semiconductors from DC to 50 GHz for RF, products are classified into three focused product families: multiservice access, high- microwave and millimeter-wave applications, performance analog and wide area networking commemorates its 10th year of business in communications. Our products are sold to 2010. The company will celebrate the occasion original equipment manufacturers (OEMs) throughout the year, including at the 2010 IEEE for use in a variety of network infrastructure MTT-S International Microwave Symposium, to equipment, including voice and media be held this year in Anaheim, California. gateways, high-speed routers, switches, access multiplexers, cross-connect systems, add-drop Rick Montgomery, CEO of Mimix Broadband, multiplexers, digital loop carrier equipment, founded the company in 2000 IP private branch exchanges (PBXs), optical modules, broadcast video systems and wireless For 10 years, Mimix has served the top tier
April/May 2010 www.compoundsemiconductor.net 243 news digest ♦ compound semiconductor telecom, satellite and defense companies with a diversified product line that includes Efficient Power Conversion Corporation (EPC) state-of-the-art RF, microwave and millimeter- have introduced a family of enhancement mode wave semiconductors. The company currently power transistors based on its proprietary has offices in Houston, Sydney, Belfast and Gallium Nitride on Silicon technology. Hsinchu and works with sales representatives in countries around the world. Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power “Mimix Broadband was founded by engineers transistors demonstrate significant performance and industry pioneers who saw a need for advantages over state-of-the-art silicon-based the solutions that our unique combination power MOSFETs. EPC’s technology produces of semiconductor design expertise and devices that are smaller than similar resistance communications systems background could silicon devices and have many times superior offer,”said Montgomery. “Our vision has allowed switching performance. Applications that benefit us to consistently bring the most effective from this newly available performance are DC- semiconductor solutions to our customers.” DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook The company’s product milestones include computers, LED drive circuits, telecom base Mimix SmartSets, innovative QFN packaged stations, and cell phones, to name just a few. chipset solutions that lower material and assembly costs and increase reliability and EPC’s enhancement mode (normally OFF) manufacturability of products, while also GaN technology was explicitly developed to allowing engineers to simplify design and replace power MOSFETs. The products are improve time-to-market. Mimix has also produced in a standard silicon CMOS foundry excelled at producing a range of high linearity on 150mm (6 inch) silicon wafers. The use of and highly integrated devices, as featured in this low-cost infrastructure has allowed EPC to the company’s 2010 advertising campaign. price the initial product offerings aggressively in order to accelerate the conversion from silicon About Mimix power MOSFETs.
Mimix Broadband, Inc. supplies high This new technology is ready for commercial performance gallium arsenide (GaAs) use. EPC has posted to its web site, www. semiconductors from DC to 50 GHz for RF, epc-co.com, results from the most extensive microwave and millimeter-wave applications. reliability testing ever performed on GaN power Mimix has offices in Houston, Sydney, devices as well as a battery of application Belfast and Hsinchu, and offers a unique notes, SPICE models, demo boards, and combination of semiconductor design expertise development kits. and communications systems background to develop state-of-the-art RF, microwave “EPC’s GaN on silicon power transistors and millimeter-wave semiconductors. Mimix represent the first major breakthrough in power markets a highly diversified product line that conversion technology since the development serves the top tier telecom, satellite and of the commercial power MOSFET. We have defense companies worldwide. developed a very cost effective and reliable technology that is also very easy for anyone with power MOSFET experience to use in a Efficient Power Conversion Corporation way that will significantly boost their power management system performance” said Alex Announces 40 V to 200V Enhancement Lidow, EPC’s co-founder and Chief Executive Mode GaN Power Transistors 2010-03-09 Officer.
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The product is priced between $0.80 and $5.00 development,” said CEO Shigeaki Kameda. in 1k quantities and is immediately available “With CIS solar technology, our PV modules through Digi-Key Corporation at http://digikey. today combine compelling economics, non- com/Suppliers/us/Efficient-Power-Conversion. toxic materials, lower energy consumption page?lang=en in production, increasingly higher efficiency, and greater potential for tomorrow. With this announcement we signal our commitment Ritek Corp Breaks Ground on RMB 2b Thin- and capacity to set and supply the new global Film Cell Plant standard for photovoltaic panels into the future, 2010-03-08 starting with the European and North American office expansions.” Taiwan’s Ritek Corporation started construction of an RMB 2 billion copper indium/gallium Solar Frontier’s Director of International selenide (CIGS) thin-film solar cell plant in Business, Brooks Herring, added, “Thanks to Yangzhou, Jiangsu Province on February 28, Solar Frontier’s significant production capacity, reported Xinhuanew.com March 2. which will reach gigawatt class with the opening of our 3rd plant in Miyazaki, Japan, in 2011- The project will be built in two phases, a 30MW -the world’s largest CIS production facility production line that will be completed by 2010 at 900MW-- we can offer the full benefits of and another 30MW line expected to be finished economy of scale to our customers. This is by the end of 2011. matched by the strong economics of panel performance we have developed through years of research, development, and testing Solar Frontier Global Expansion and in the field. Our panel development engineers Consolidation understand that economics is the key driver 2010-03-06 of a panel’s value, which depends on the combination of efficiency, durability, stability, U.S. and Europe Offices, New Worldwide temperature coefficient, degradation, and Name and Brand for Soon-To-Be-Former numerous other factors, whether you are a Showa Shell Solar home owner, business, or utility. There is far more than a gigawatt of demand for the Showa Shell Solar K.K., a 100% subsidiary superior economics we can deliver.” of Showa Shell Sekiyu K.K.headquartered in Tokyo, today announced that it will open two “Our production, factory, and quality assurance overseas offices this April in Northern California engineers understand this as well,” added and Munich, further building its global network Kameda. “Our gigawatt scale capacity is an to facilitate one gigawatt per year of sales and engineering decision as well as an economic delivery of its proprietary CIS solar panels to decision because this is what we can do customers worldwide. today for maximum production efficiency and minimum energy payback time. Moreover, our The move will be accompanied by a global panel efficiency will continue to climb toward branding consolidation under a single name, the aperture area efficiency of 16.0% on a Solar Frontier (the original name of its 30cm x 30cm module we achieved recently international sales subsidiary), and a new logo. in our laboratories. While the aperture area efficiency of panels coming off of the assembly “We chose Solar Frontier as the name of our line today are at a competitive efficiency of international division a few years ago because around 13.0%, we expect to reach 14.2% when we knew we stood at the frontier of the our third plant starts operating in 2011, and photovoltaic industry in terms of research and approach 15.0% by 2014.”
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photovoltaic markets across Europe. Germany “Solar Frontier” expresses our commitment to is home to approximately half the solar modules leadership in the global PV market. We stand at in operation worldwide, based on recent the frontier with our proprietary CIS technology industry estimates. This market continues and its greater potential for improvement and to grow as 2009 installations exceeded innovation. It also expresses our vision of expectations, likely surpassing 3.0 GW. the future of energy, when human needs are abundantly met by the limitless power of the Germany is home to the largest solar cluster sun horizon. in the world that encompasses a wide range of manufacturers, suppliers, and research institutes. Together, these innovators create a synergy that has added photovoltaics to the Showa Shell Solar opens in Germany long tradition of the “Made in Germany” label, a 2010-03-05 symbol for high quality and innovation.
Japanese CIS PV maker is to open in German Solar Frontier manufactures proprietary thin- film modules that substitute silicon with the key Japanese solar company Showa Shell Solar ingredients copper, indium, and selenium. The has announced a new investment in Germany. company benefits from competitive material Along with the company’s renaming to Solar prices compared to conventional silicon wafer- Frontier, the CIS (copper-indium-selenium) based modules. The thin-film modules are photovoltaic module manufacturer will open expected to reach a 14.2 percent efficiency its first European office in Munich in 2010. level by 2011. Solar Frontier was assisted Germany Trade & Invest supported the by Germany Trade & Invest and Invest in company with its investment plans. Bavaria, the economic development agency for the federal state of Bavaria. Germany Trade Aiming to ramp up production to reach a sales & Invest is currently showcasing the latest goal of 1 million kilowatts worldwide in 2012, opportunities available in the world’s largest the Munich office, alongside a new American solar market at this year’s PV Expo (East Hall counterpart in California, will play an integral 4, Stand no. 26-22), taking place March 3 - 5 in role in achieving this mark. The company’s Tokyo, Japan. production figures will increase by more than ten times its current level, strengthened by an Germany Trade & Invest is the foreign trade additional plant that will begin production in and inward investment promotion agency of the mid-2011. Federal Republic of Germany. The organization advises foreign companies looking to expand Solar Frontier CEO Shigeaki Kameda: “The their business activities to the German market. German priority on both economic and It provides information on foreign trade to ecological criteria precisely matches Solar German companies that seek to enter foreign Frontier’s top design and production mandates. markets. Germany is also the world’s largest market, so we have three very critical reasons to invest here: the German priority on economy, the Nano based thin film solar German priority on ecology, and the German 2010-03-05 market size. We therefore expect to fulfill very strong demand.” Magnolia Solar announces NYSERDA award for nanostructure thin film solar Solar Frontier’s decision to invest in Germany Magnolia Solar Corporation has announced also serves it well for access to growing that its wholly owned subsidiary has recently
246 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest received a $1 million award from the New York friendly energy technologies. This partnership State Energy Research and Development further demonstrates CNSE’s growing portfolio Authority (NYSERDA). This award is to develop in supporting both innovative technologies and advanced thin-film solar cells in partnership companies in the critical alternative energy with the College of Nanoscale Science and sector.” Engineering (“CNSE”) of the University at Albany. Francis J. Murray, Jr., NYSERDA President and CEO, stated, “NYSERDA is pleased to Magnolia Solar has the technology to capture help Magnolia expand their work in New York a broader spectrum of the sun’s energy and State. NYSERDA’s early-stage investments to reduce energy losses due to reflection. This in innovative, environmentally-friendly technology uses non-toxic materials on low- technologies offer the promise of new jobs and cost substrates to produce high-efficiency, industries for New York in the future. The new low-cost solar cells. Magnolia Solar will work in products that result from these investments close collaboration with faculty and scientists will help us realize Governor David Paterson’s from CNSE’s Energy and Environmental vision for a clean energy economy that uses Technology Applications Center (“E2TAC”) new and emerging technologies to save energy, at CNSE’s Albany NanoTech Complex to create jobs, and improve our environment.” demonstrate its technologies in nanostructure- based thin film solar cells. The program, which is designed to improve energy efficiency while reducing production costs, is also being supported by Professor Fred Schubert at RPI. Financial news Magnolia Solar has received a NYSERDA order for the first phase of this three-phase STMicroelectronics Announces Proposals development program. to be Offered at 2010 AGM 2010-04-20 Dr. Ashok K. Sood, President and CEO of Magnolia Solar Corporation, commented, “We Dividends to be paid out in four equal quarterly are delighted to receive this critical funding installments following AGM in Amsterdam on from NYSERDA, and to have the opportunity to May 25th 2010 play a role in providing future energy solutions for New York State. We are committed to STMicroelectronics (NYSE:STM) announces growing in the Albany region, supported by the main resolutions to be submitted for the world-class intellectual and technological shareholder approval at the Company’s Annual infrastructure at CNSE’s Albany NanoTech General Meeting. Complex.” Dr. Sood continued, “Magnolia Solar’s mission is to provide environmentally The main resolutions, proposed by the responsible and low-cost solutions for the solar Supervisory Board, include: power industry, and to be an integral part of -- Approval of the Company’s 2009 accounts New York’s green energy future.” reported in accordance with International
Financial Reporting Standards (IFRS) Dr. Pradeep Haldar, CNSE Professor and -- The reappointment for a three-year Head of NanoEngineering and Executive term, expiring at the 2013 Annual General Director of E2TAC, commented, “We look Meeting, for thefollowing members of the forward to working closely with Magnolia Solar Supervisory Board: on this innovative clean energy research, which Mr. Raymond Bingham and Mr. enhances New York’s push to accelerate the Alessandro Ovi; development of renewable and environmentally
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-- The distribution of a cash dividend of and payment dates for the subsequent US$0.28 per share, to be paid in four equal installments are consistent with the usual quarterly installments in June, August and schedule. December 2010 and February 2011. The full schedule of the proposed installments is available at the following website: AXT schedules Q1 2010 Earning Release and Conference Call http://www.st.com/stonline/press/news/ 2010-04-20 year2010/c2626c.htm Financial Release will take place on April 28, Shareholders should register to participate at 2010 at 1:30 p.m. PDT immediately following the AGM by April 28, 2010. close of market.
The complete agenda and all relevant AXT, Inc. (NASDAQ: AXTI), developer and detailed information concerning the AGM manufacturer of compound semiconductor will be available on the Company’s web site substrates, will announce its financial results (www.st.com). for the first quarter 2010 in a press release immediately following the close of market. If approved, for the first installment, the Company’s common shares will trade ex- Financial information will be available on the dividend on Euronext Paris and the Milan AXT website ( http://www.axt.com ) immediately Stock Exchange (Borsa Italiana), on Monday, prior to the conference call. May 31, 2010. The payment date will be Thursday, June 3, 2010. The conference call, which will be webcast on the aforementioned website, can be accessed For holders of shares listed on the NYSE, via the following number: shares will trade ex-dividend on Friday, (719) 457-2705 (passcode 8474153) May 28, 2010. The record date will be The call may be replayed until May 5, 2010 on Wednesday, June 2, 2010, and the payment the number below: date will be on or after Tuesday, June 8, (719) 457-0820 (passcode 8474153). 2010. Transfers between New York and European (Dutch) registered shares will be closed from the end of business in Europe on Friday, May 28, 2010, until the open of Riber Q1 2010 Sales up by 11% business in New York on Thursday, June 3, 2010-04-20 2010. Sales order backlog 30% higher than for the *Since the Annual General Meeting will be same period in 2009 held on May 25, the Company will be unable to both set the ex-dividend date for, and to Riber, a global provider of MBE tools used pay, the first dividend installment in May in the compound semiconductor industry, according to the usual schedule, and has reported 1st quarter 2010 sales of € 2.9 million. therefore resolved, in coordination with the A sales order backlog of € 9.1 million was stock exchange and with a view to ensuring also announced and this is a 30% increase the appropriate functioning of the market for compared to the same period in 2009. its shares from a substantive standpoint, to pay such installment on June 3 with an ex- Sales for Q1 2010 saw an increase of 11% dividend date on May 31 (May 28 in NY). from € 2.6 million in 2009 and are mainly Other than indicated below, the ex-dividend attributed to sales associated with services and
248 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest accessories of the RIBER and VG brands. at 5:00pm E.T.
The backlog includes 7 machines to Cree Inc. which provides numerous forms of be delivered in 2010, one of which is power LEDs globally will announce its Q3 2010 manufacturing reactor sold at the end of March financial results in a webcast. to a Russian firm. The conference call can be accessed by As in 2009, two research tools were delivered logging on to the following website: over the 1st quarter although sales of cells and sources declined by € 0.3 million, compared to http://www.videonewswire.com/event. an exceptionally high 1st quarter in 2009. asp?id=67685
An Annual General Meeting for shareholders The webcast will also be available for replay at has been scheduled for Thursday May 27, the same website after the call. 2010.
NeoPhotonics announces intention for Kopin announces date for Q1 2010 Financial listing on NSE Release 2010-04-19 2010-04-19 Firm hope to offer up to $115 million of common Company to reveal results alongside stock under name “NPTN” conference call on Tuesday, May 4, 2010 at 9:00 a.m. ET. California based NeoPhotonics, known as NanoGram before 2002, is a designer Kopin Corporation (NASDAQ: KOPN) which is and manufacturer of photonic integrated a mass producer of III-V HBTs, will announce circuit based modules and high-speed its Q1 2010 financial results in conjunction with communications networks. a conference call. The company has announced its intention The conference call may be accessed by to apply for a listing on the New York Stock dialing Exchange under the symbol “NPTN”. An initial public offering of up to $115 million worth of (877) 407-5790 (from U.S. and Canada) shares of its common stock is intended.
(201) 689-8328 (International) The net proceeds from the stock are anticipated to be utilized for further business expansion, The audio webcast will be archived and working capital and general corporate available on the “Investors” section of the Kopin purposes. website, www.kopin.com following the call. The book-running and underwriter representatives will be jointly managed by J.P. Morgan Securities Inc. and Deutsche Bank Cree Announces Date for Q3 2010 Earnings Securities Inc. Call and Webcast 2010-04-19 NeoPhotonics reported revenue of $155.06 million and net loss of $6.8 million for the year Conference call to take place on April 20, 2010 ended December 31, 2009.
April/May 2010 www.compoundsemiconductor.net 249 news digest ♦ compound semiconductor
Eastern Time The main stockholders will belong to funds affiliated with Oak Investment Partners, Draper .A conference call reviewing the results is Fisher Jurvetson, Concord Investments Co., scheduled to take place an hour later at 5 p.m. ATA Ventures and International Finance Corp. E.T.
Mattson Announces Financial Release of Q1 A webcast of the call will be available www. 2010 and Web Cast zygo.com for 30 days following the call. 2010-04-19 The dial-in number for the conference call is Conference call to take place on Wednesday, April 21, 2010 at 6:00 p.m. E.T. 800-925-4693
Mattson Technology, Inc. a global supplier of semiconductor manufacturing equipment (including rapid thermal processing tools) Oclaro reports reverse stock split announced that the company will host a 2010-04-15 conference call on Wednesday, April 21, 2010 at 6:00 p.m. Eastern Time (3:00 p.m. Pacific Oclaro has announced a reverse stock split to Time). take place at the end of the month.
The conference call will cover the financial Optical and laser component developer Oclaro results of Q1 2010 and will be take place has announced a reverse stock split as part of alongside a slide presentation. its preliminary results for the third fiscal quarter.
The live web cast and slide presentation may The company is to undertake a one-for-five be accessed under the ‘Investors’ section at reverse stock split that will hopefully boost the Mattson’s website www.mattson.com . A digital value of its remaining shares. It is to undertake replay of the conference call will be available this action from the opening of trading on the on Mattson’s website until 28th April 2010. US Nasdaq on April 30th.
The live conference call may be accessed via “By executing a reverse stock split we believe the higher share price will appeal to a broader (970) 315-0417 universe of institutional investors,” said Alain Couder, president and chief executive officer of the firm.
Zygo Announces Date for Broadcasting He added that demand for the company’s Fiscal 2010 third-quarter Results services remains strong and this has led to 2010-04-16 a revenue forecast of $101.2 million (£65.6 million) for the third quarter of the financial Conference call to take place on May 4th 2010 year - in line with the firm’s $97-$102 million at 5:00 p.m. E.T. prediction which was set out in its second quarter results from February 1st. Zygo Corporation a global supplier of optical metrology instruments to the compound Oclaro presently has a share price of $2.73 semiconductorindustry announced that it will (April 15th, 14:14 BST). reveal its fiscal 2010 third-quarter financial results on Tuesday, May 4th, 2010 at 4p.m.
250 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
TriQuint announces date for Q1 2010 Laser market will reach about $500M in 2016 Earnings Release and Webcast with more than 45 million devices. 2010-04-15 Yole’sstudy provides a complete analysis of the Conference call to be held on Wednesday, April projection applications targeted by the green 28, 2010, at 2:00 pm PDT laser diodes along with key market metrics. It describes the involvement of the major laser TriQuint Semiconductor, Inc. the world’s largest device manu-facturers and gives a snapshot commercial GaAs foundry, will announce its of the GaN material industry playground. The earnings for Q1 2010 (ended April 3) on April report presents the $ and unit values on the 28 at 1.00pm PDT. 2009-2016 time scale for the green laser diode devices and the related ma-terial market size in A conference call with the investment 2” equivalent. community will also be hosted on the same day at 2:00 p.m. PDT. The green laser market today is highly segmented in numerous niche applications Conference Call Information: from medical to military applications and laser Date: Wednesday, April 28, shows. Those applications can work with 2010 existing Solid State Lasers or the more recent Time: 2:00 p.m. (PDT) combinations of semiconductor lasers with Dial-in: 888-813-6582 or 706- non linear crystals (SHG: Second Har-monic 643-7082 Generation) Conference Call ID #: 64261416 In the emerging market of picoprojectors A webcast of the conference call also will be and other display techniques such as Head available from the following link: http://www. Mounted Dis-play (HMD) or Head up Display triquint.com/investors/events (HUD), the ideal light emitting device would be A digital replay of the conference call will be lasers thanks to their capability to deliver highly available until midnight on May 5, 2010. saturated colors in the widest possible gamut. Additional features are fo-cus-free operation To access the replay, investors should dial and expected improved wall-plug efficiency 800-642-1687 or 706-645-9291 and enter which will affect the power consump-tion for Conference ID # 64261416 battery operation.
In 2009 however, the first LED based Green laser market to hit 500M by 2016 picoprojectors have been available on the 2010-04-15 marketplace with a slow take-off. No more than 300k units have been sold. The poor Yole Développement has released its new brightness (10 lm) for a relative high price might markets & technological study dedicated to be a reason for this. In the same year some green laser devices for projection applications. impressive progress has been published on the capability to shift the blue laser diodes towards In this report, the company announces that the green wavelength. The direct-emission picopro-jectors will drive the green laser semiconductor laser should be available in market. Indeed, in this emerging market, the the coming years (2011-2012) to serve the ideal light emitting de-vice would be lasers projection dis-play applications. thanks to their capability to deliver highly saturated colors in the widest possible gamut. Green laser diode market size will reach about According to Yole Développement the Green $500M size by 2016 and should represent
April/May 2010 www.compoundsemiconductor.net 251 news digest ♦ compound semiconductor more than 45M devices: Laptop: that is probably the most unclear segment as it is hard to accurately Stand-alone projectors: Yole predict about the behavior of consumers: Développement forecasts this market will they go for an all-in-one solution to really take-off by 2010 with a sales (PC plus projector) with an embedded volume in between 0.5 to 1 M units. projection device that will probably be During this first phase, most of it will be less efficient than desktop projectors? LED-based but the company forecasts Yole Développement remains very 10-20% will be laser-based by 2011 and conservative on that application. that ratio will grow to 50-75% by 2016. Only SHG laser diodes are available Yolealso envisions a natural move today on the market place. “Corning, from stand-alone to embedded device OSRAM and QD Laser hav-ing each as the technology will little-by-little their proprietary solution to green light be compatible with size and cost generation. However, given the complex constraints. package of these lasers, it seems difficult to reach a reasonable target Cell-Phone: that market will start late price. Moreover, these components 2010 with high-end devices (Samsung seem to suffer from a shortage “Android”,…). Laser-based systems situation”, explains Philippe Roussel, will be slowly implemented along with Project Manager at Yole Développe- cost reduction but Yole Déve-loppement ment. stays very conservative saying that LED will strongly dominate at least until 2016. Sumitomo SEI, KAAI (UCSB) and According to the small size requirement, OSRAM are the most advanced players direct-emission green laser will be highly for direct-emission green la-ser diodes. recommended. If performance meets the minimum requirements for optical power, wall-plug Media Players: that device is the perfect efficiency and lifetime, some of them location for embedded pico-projectors. could possibly offer products in limited Its ultimate function is to diffuse and quantities as soon as the middle of 2011. share media. There are less cost constraints and size issues com-pared The battle for direct-emission green to cell-phone. The boom should occur source will also take place at substrate by 2012 with 2.6 to 5 M units equipped side where non-polar and semi-polar with projection functionality. SHG green GaN crystal can play a very positive role lasers should dominate first waiting in green wavelength emission. for direct-emission to be price and performance-compatible. The Light-Engine Module, combination of light source and image management Camera and camcorder: “There, we (LCD, micro-mirrors, LCOS…) is forecast a slow market penetration for expected at a target price of $40, this laser-based technologies as the battery implies a price target of $10 per color, life-time and cost can become critical red will not be a problem, however, GaN parameters. LED technol-ogy should blue lasers have not reached that price dominate in these applications” says target yet despite their maturi-ty. Green Regis Hamelin, Yole Développement’s laser will also have to stay in the $10 Mar-ket & Technology Analyst. range to penetrate the market.
252 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
LED and HBLED are serious competitors “iSuppli believes that during the past two since some pico-projectors are already years, several events have occurred that announced with Brightness of up to have made GaN an up-and-coming star in the 30 lumens. The capability of lasers to power management semiconductor world,” deliver bright images becomes less said Marijana Vukicevic, principal analyst for ‘unique’. If the green and blue lasers power management at iSuppli. “First, the use of from GaN based materials are not silicon has reached its practical limits in power delivered in the expected target price, management semiconductors. Furthermore, the market share for lasers could be there have been major breakthroughs in limited to high end products. growing GaN layers on silicon.
Power designers also want to develop more efficient systems and to update their high- GaN Power Management Chip Market Set voltage products to waste less electricity.” for Boom Component suppliers have begun offering GaN 2010-04-14 parts. International Rectifier Corp., for instance, Thanks to rapid growth in the high-end released its first GaN technology-based Point- server, notebook, mobile handset and wired of-Load (POL) solutions in February, while communication segments, the Gallium Nitride Efficient Power Conversions Corp. (EPCC) (GaN) power management semiconductor is placing all its bets on GaN technology, market is expected to reach $183.6 million in releasing 10 power MOSFET devices this revenue in 2013, up from virtually nil in 2010, month. The attached figure presents iSuppli’s according to iSuppli Corp. GaN power management revenue forecast for the period of 2008 through 2013. Efficiency needed The adoption of GaN devices will be GaN is an emerging process technology for power management chips that recently moved driven by the improved efficiency and small form factors enabled by the material. beyond the university-based testing phase and into the commercialization stage. The Such benefits are in particularly high demand technology represents an attractive market for portable electronic products, including opportunity for suppliers by providing their mobile PCs and smart phones. customers with capabilities that may be out of the reach of present semiconductor process They also provide advantages for power- materials. hungry electronic equipment, such as enterprise servers and wired communications iSuppli Figure: Global Gallium Nitride (GaN) infrastructure gear. Power Management Semiconductor Revenue However, adoption of GaN technology for Forecast (in Millions of U.S. Dollars) these applications in 2010 and 2011 will be
slow due to the high cost of parts using the material. As the technology advances and the cost of manufacturing GaN technology drops in 2012 and 2013, the technology will begin to steal market share away from conventional MOSFETs, driver ICs and voltage regulator ICs. The first adoption of GaN devices most likely will be among servers, which always demand high-performance devices and often are one of the first product areas to accept new Source: iSuppli Corp. March 2010 technologies that improve performance.
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Over the next three years, the bulk of device US firm Cree (NASDAQ:CREE) which volume likely will be driven by notebooks, as manufactures LED fixtures and bulbs and the power savings and smaller form factor power-switching and wireless devices will host delivered by GaN will be in high demand. a webcast over the internet.
Discover more about the emerging power The webcast will be broadcast online at the management technologies with Vukicevic’s new following websitehttp://www.videonewswire. report entitled: World of Unlimited Possibilities com/event.asp?id=67685 — GaN Devices to Capture Market Share. The call may be viewed on the same website after the call. RF Micro Devices to Webcast Quarterly Earnings Conference Call on April 27, 2010 2010-04-13 KLA-Tencor Announces Live Webcast of Q3 RF Micro Devices, Inc will host a conference Review of Fiscal Year 2010 2010-04-13 call to review fiscal 2010 fourth quarter financial results on Tuesday, April 27, 2010, at 5:00 p.m. (ET) Webcast to take place on Thursday April 29th 2010 at 2:00pm PDT RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound KLA-Tencor Corporation (NASDAQ:KLAC), semiconductor technologies, will host a global supplier of process control and yield management solutions to the compound conference call to review fiscal 2010 fourth semiconductor industry announces that the quarter financial results on Tuesday, April 27, 2010, at 5:00 p.m. (ET). The conference call company will broadcast a live conference call to will be webcast live on the Company’s web site review its third quarter fiscal year 2010 results. at http://www.rfmd.com (under “Investors”). The webcast may be accessed from the A telephone playback of the conference call Investor Relations page of KLA-Tencor’s will be available approximately one hour after website at the call’s completion and can be accessed by dialing 303-590-3030 and using the passcode http://ir.kla-tencor.com/ 4282022. The playback will be available through the close of business May 4, 2010. The webcast will remain available on the same webpage for twelve months following the conference call. RFMD will distribute fiscal 2010 fourth quarter financial results at approximately 4:00 p.m. (ET) on Tuesday, April 27, 2010. Changelight places order for two more MOCVD reactors 2010-04-13 Cree announces Q3 Earnings Call and
Webcast 2010-04-13 Aixtron announces shipment of AIX 2600G3 tools in Q2 2010 Webcast to take place on April 20, 2010 at 5:00pm Eastern Time Chinese company Changelight Co, based
254 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest in Xiamen’s Torch Industry Park of Fujian Anadigics announces date for Q1 2010 Province, ordered the two IC multiwafer financial results and conference call production systems in the fourth quarter of 2010-04-12 2009. Financial release to occur after market closure The additional reactors will be used to increase on 26th April 2010 production of red, orange and yellow (ROY) ultra high-brightness (UHB) LEDs. The first New Jersey HQ based firm Anadigics 2600G3 Planetary Reactor system was who provide semiconductor solutions commissioned less than a year ago. to the broadband wireless and wireline communications markets, will issue a copy of General Manager of Changelight, Prof. Wang the earnings press release after close of market Xiang Wu, who has a decade of experience on 26th April 2010. working on Planetary MOCVD reactors, remarked, “The addition of a further pair of AIX Conference Call 2600G3 systems will underpin the next step in Analysts will later host a conference call our company strategy to become the leader of to discuss the First Quarter 2010 Financial the Chinese optoelectronics industry. They will Results and Second Quarter 2010 Business provide a major capacity boost for UHB ROY Outlook at 5:00 pm Eastern time. The LED products – we are already a leader in UHB conference call will be web cast live on the ROY LED products and now Changelight is Company’s Web site at http://www.anadigics. working hard to provide the very best products com/investors. for China’s solid-state lighting program.” Playback of the conference call will be available approximately one hour after the calls and may be replayed until May 3, 2010. Nanometrics to announce Q1 2010 results on May 6th 2010 with conference call 2010-04-12 SPTS announces shipments of $40 million Financial results to be revealed after close in Q1 of 2010 of market and conference call to be held at 2010-04-12 5:00pm Eastern time Growth in compound semiconductor industry Nanometrics, manufacturers of process control accounts for a significant proportion of sales metrology systems used in the manufacturing of semiconductors, wafer-scale packaging, SPP Process Technology Systems (SPTS) solar photovoltaics and high-brightness LEDs supplies a broad range of CVD, etching, will announce their first quarter financial results deposition and thermal processing equipment on May 6th 2010. to semiconductor device manufacturers and research institutions, globally. Conference call SPTS was formed in October 2009 in the merger of Surface Technology Systems (STS) A live webcast of the conference call can be and assets acquired from Aviza Technology. accessed from Nanometrics’ website at www. A subsidiary of Sumitomo Precision Products nanometrics.com and a webcast recording will (SPP), SPTS today revealed shipments of $40 also be available on the the website after the million during the first quarter of 2010 (ending call. 31 March). Apart from the traditional MEMS and image
April/May 2010 www.compoundsemiconductor.net 255 news digest ♦ compound semiconductor sensor markets, a large proportion of the All details may be accessed through the ‘News shipments were STS branded products to and Investors’ link on the Rubicon Technology the compound semiconductor industry. Light website www.rubicon-es2.com emitting diode (LED) applications accounted for a significant part of the sales. “We see continuing strong customer interest Decision made at Obducat’s Extraordinary in all product lines, with our system book to General Meeting bill ratio in excess of 1.3:1 during the first 2010-04-08 quarter,” said William Johnson, President and CEO of SPTS. “In addition, as we complete the At the extraordinary general meeting at integration of our UK Division and relocate the Obducat AB (publ) on April 7 2010, an Thermal Products Division to a new facility in unaminous decision was made according to the San Jose during the second quarter, we expect Board’s proposalAt the extraordinary general to see significant improvement in gross margin meeting at Obducat AB (publ) on April 7 2010 and operating expense efficiency as we enter the second half of the year.” At the extraordinary general meeting at Obducat AB (publ) on April 7 2010, an unaminous decision was made according to the Board’s proposal, regarding the conditions Rubicon Technology Announces Schedule of Obducat’s convertibles 2008/2011:A of First Quarter 2010 Financial Results and and B meaning that conversion to shares Conference Call 2010-04-09 corresponding to the whole or part of the debenture loan that the holder calls for during Rubicon Technology (Nasdaq:RBCN) the time from April 19 to April 30 shall be at schedules its release of first quarter 2010 a fixed price of 0,27 SEK. Such a conversion shall be executed within short. financial results for Thursday, April 29th, 2010
Rubicon Technology , a leading provider of Furthermore, at the Meeting was decided, sapphire substrates and products to the LED, according to the Board’s suggestion, if changes Semiconductor, and Optical industries, will of the conditions for the corporate’s warrants 2009/2011:A and B as well as 2009/2012:A report financial results for the first quarter ended March 31, 2010 on Thursday, April 29th, and B, which means that if converting the 2010 after the market closes. share rate and the number of shares that each warrant gives the right to underwrite, with the Conference Call purpose to compensate the holders of the warrants at the lower conversion rate as a The Rubicon management team will also host result of the changes of the conditions of the a conference call at 4:00 p.m. CDT on April debenture loan. Re-calculation of the warrant conditions will be made as soon as the result 29th to review the financial results. Callers may participate in the conference call either by of the convertible debenture conversion of dialing 10 minutes prior to the call or by pre- the period April 19 2010 to April 30 2010 have registering online. been summed up. Information about the re- calculated conditions will be published in a An audio replay of the call will be available press release. approximately two hours after the conclusion of the call and will remain available until 11:59 p.m. May 6, 2010. The conference call will also be webcast live over the internet.
256 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Natcore Technology Enlarges Solar Science by the emergence of digital photography. All Portfolio With Acquisition of Vanguard Solar production materials are widely available and 2010-04-07 dramatically cheaper than silicon and other thin film systems. If successfully developed, Vanguard’s technology to complement the process would enable a very cost-efficient Natcore’s production capability in large-scale facilities.
Two of Vanguard’s founders and shareholders One month after announcing the formation of are Professor Andrew Barron and Dr. Dennis a joint venture in China to produce equipment and materials for use in making solar cells, Flood, both of whom are scientific founders of Natcore. It was collectively felt that the Natcore Technology Inc. is pleased to acquisition of Vanguard Solar and the announce that it has executed a letter of intent integration of its technology into Natcore’s to purchase Vanguard Solar, Inc., a private firm intellectual property portfolio would continue controlling key intellectual property in the field to expand the depth and breadth of Natcore’s of solar energy. The closing of the transaction impact on the solar industry. is subject to the completion of due diligence and mutually agreeable legal documentation. As consideration for the purchase of Vanguard Solar, Natcore has agreed to issue Vanguard Vanguard has been focused on the shareholders common shares of Natcore development of a flexible, thin-film photovoltaic Technology, subject to the approval of the material capable of silicon solar cell-like TSX Venture Exchange. Specific terms of the efficiency performance potentially at one tenth transaction will be provided upon closing of the the manufacturing cost and one twentieth the acquisition. capital investment. “We are particularly excited about this Vanguard employs a proprietary chemical acquisition, because it represents another bath process similar to Natcore’s liquid compelling outgrowth of Prof. Barron’s phase deposition (LPD) technology, although foundational work in chemical processes that Vanguard is growing II-VI compound mimic materials growth in nature,” says Chuck semiconductor thin films on carbon nanotubes Provini, Natcore’s President and CEO. “In at room temperature and ambient pressure, fact, the very name of our company, being a while Natcore has thus far concentrated combination of ‘nature’ and ‘core,’ was chosen on growing silicon dioxide films on silicon substrates. to reflect this remarkable synthesis of natural processes, such as the growth of an abalone The first-generation products from Vanguard’s shell, that grow extraordinary materials in method could produce 15%-16% efficiencies widely varied environments. By employing at module costs of 60¢ to 70¢ per watt. It is ultra-pure chemicals and modern materials anticipated that second-generation technology science, Prof. Barron has been able to combine could achieve 20% efficiencies at even lower the best of man and nature.” costs per watt. The investment for production Brien Lundin, Natcore’s Chairman, notes that facilities is projected as low as $10 million to “While we remain focused and committed $15 million per 100-megawatt to 150-megawatt to advancing our LPD technology for anti- production capability, as compared with current costs of as much as $250 million for standard reflective (AR) films and super-efficient tandem solar cells, the acquisition of Vanguard Solar solar-cell production facilities. Vanguard’s production equipment would be designed provides significant additional value to our intellectual property portfolio. Meanwhile, our for insertion into an existing roll-to-roll film- work to advance our LPD technology, and to coating line of the sort that has been displaced finalize our joint venture agreement with our
April/May 2010 www.compoundsemiconductor.net 257 news digest ♦ compound semiconductor
Chinese partners for the design and sale of AR- “Earnings Conf. Call” sign-up link. A slide growth equipment, continues on schedule. We presentation will also be available for reference expect to provide more-detailed updates in the during the conference call; go to the investor very near future.” relations page of our website and click on On behalf of the Board of Directors, “Presentations.” “Charles Provini” Conference call replay via telephone will be President & Chief Executive Officer available from April 22, 2010, 1:00 p.m. Eastern Time through Midnight on May 7, 2010. For Goodrich Announces Schedule for replay, Release of First Quarter 2010 Results and Conference Call Domestic Callers: Dial #: 888-203-1112 2010-04-07 International Callers: Dial #: 719-457-0820 Use Replay Access: Code #: 5899490 Goodrich Corporation (NYSE: GR) has (Note: For replay, access code must be used) scheduled its release of first quarter 2010 financial results for Thursday, April 22, 2010 Goodrich Corporation, a Fortune 500 company, is a global supplier of systems and services Goodrich Corporation (NYSE: GR) has to aerospace, defense and homeland security scheduled its release of first quarter 2010 markets. With one of the most strategically financial results for Thursday, April 22, 2010, diversified portfolios of products in the industry, before the market opens. The financial results Goodrich serves a global customer base with release will be available through First Call and significant worldwide manufacturing and service on www.goodrich.com under “Goodrich News.” facilities. For more information visit http://www. goodrich.com/. Conference Call Media Contact: On Thursday, April 22, 2010, Goodrich Lisa Bottle +1 704 423 7060 Corporation will host a conference call for Laurie Tardif +1 704 423 7048 investors and security analysts to discuss Investor Relations: financial results for the first quarter of 2010. Paul Gifford +1 704 423 5517 Marshall Larsen, Chairman, President and Chief Executive Officer, and Scott Kuechle, Executive Vice President and Chief Financial LED demand leads to Cree share increase 2010-04-06 Officer, will host the call.
Shares in Cree have risen following a surge in Conference Call: Thursday, April 22, 2010 demand for LED products. Time: 10:00 a.m. Eastern Time
A growth in demand for light-emitting diodes All Callers: Dial #: 913-312-1235(Call in 10 (LEDs) has resulted in an upsurge in the value minutes prior to be included) of shares for LED manufacturer Cree.
Code: #5899490 (The operator may ask for this Shares in the company rose by 8.48 per cent code) yesterday (April 5th) to stand at a new 52-week
high of $77.07 (£50.79). The call will be broadcast live and will also be available for replay over the Internet. Go An analyst for UBS stated that the forecast to http://www.goodrich.com/ and click on the general lighting compound annual growth rate
258 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest has increased from 40 per cent to 56 per cent will be available on Skyworks’ Web site or by during the course of the year so far for firms calling 888-203-1112 (domestic) or 719-457- in Asia and, as such, prompted this growth in 0820 (international), pass code: 9263734. value.
“Our global LED team raised its demand Veeco Announces Date for First Quarter estimate 33 per cent for general lighting LEDs 2010 Financial Release to 9.7 billion sq mm in 2011 - from 7.3 billion 2010-04-05 previously - given an increasing focus on lighting from LED companies we visited on our Veeco Instruments Inc.today announced tour of LED companies in Asia,” the unnamed that first quarter 2010 financial results will be analyst commented. distributed after the market closes on Monday, April 26, 2010. A conference call reviewing Cree’s products include LED fixtures and bulbs, these results has been scheduled for 5:00pm high-brightness LEDs, power-switching devices EDT that day at 1-877-675-4756 (toll free) or and radio-frequency/wireless services. 1-719-325-4838 using passcode 8449787. The call will also be webcast live on the Veeco website at www.veeco.com. A replay of the call Skyworks Sets Date for Second Quarter will be available beginning at 8:00pm EDT that Fiscal 2010 Earnings Release and same evening through midnight on May 10, Conference Call 2010 at 888-203-1112 or 719-457-0820, using 2010-04-05 passcode 8449787, or on the Veeco website.
April 29 at 5:00 p.m. Eastern Time About Veeco Veeco Instruments Inc. manufactures enabling Skyworks Solutions, Inc.an innovator of solutions for customers in the HB-LED, solar, high reliability analog and mixed signal data storage, semiconductor, scientific research semiconductors enabling a broad range of end and industrial markets. We have leading markets, will conduct a conference call with technology positions in our three businesses: analysts to discuss its second quarter fiscal LED & Solar Process Equipment, Data 2010 results and business outlook on April 29 Storage Process Equipment, and Metrology at 5:00 p.m. Eastern time. Instruments. Veeco’s manufacturing and engineering facilities are located in New York, After the close of the market on April 29, and New Jersey, California, Colorado, Arizona, prior to the conference call, Skyworks will Massachusetts and Minnesota. Global sales issue a copy of the earnings press release via and service offices are located throughout the Business Wire. The press release may also U.S., Europe, Japan and APAC. To learn more be viewed on Skyworks’ Web site at www. visit http://www.veeco.com/ skyworksinc.com. To listen to the conference call via the Internet, please visit the investor relations section of CVD Equipment Corporation Reports Fiscal Skyworks’ Web site. To listen to the conference Year 2009 Results call via telephone, please call 888-218-8142 2010-04-01 (domestic) or 913-312-0842 (international), confirmation code: 9263734. CVD Equipment Corporation announced today that it has achieved profitable results for the Playback of the conference call will begin at sixth consecutive year 9:00 p.m. Eastern time on April 29, and end at 9:00 p.m. Eastern time on May 6. The replay We achieved net earnings of approximately
April/May 2010 www.compoundsemiconductor.net 259 news digest ♦ compound semiconductor
$179,000 or $0.04 per basic and diluted share to Solar polysilicon facilities. Our Application for the fiscal year ending December 31, 2009 Laboratory is providing research and the compared to $632,000 or $0.13 per basic and further implementation of our business plan to diluted share for the fiscal year 2008. offer Nano and Solar companies assistance in accelerating the commercialization of their Revenue for fiscal year ending December next generation of products on CVD production 31, 2009 was $ 10,575,000 compared to equipment platforms. We recently delivered $18,147,000 for fiscal year 2008. This 41.7% to Brookhaven National Laboratory (BNL) a decline in revenue of approximately $7,572,000 major deposition system for their Light Source was a result of (i) delays or reductions in II Synchrotron project. capital expenditures by potential customers due to unfavorable economic conditions and This system is a major engineering step (ii) a significant contract from a CVD division forward in technology and is key to BNL customer being breached during the fourth reaching an ambitious goal: x-ray nanofocusing quarter of 2009. This contract was accounted that will enable researchers to explore what for under the percentage of completion contract promises to be a whole new class of science. method of revenue recognition and had we The direction the Company has taken is been able to continue recognizing the revenue correct, we will continue to expand our from that contract, our revenue for 2009 would technology, products, customer base and the have been approximately $14,139,000 and revenues for 2010 should improve over 2009” the decline in revenue 22.1%. For additional information please refer to the Report on Form 10-K for 2009.
Leonard Rosenbaum, President and Chief Executive Officer stated, “2009 was a difficult year with unfavorable economic conditions and the breach of a major contract by a CVD Division customer. The difficult economic conditions experienced in 2009 have not continued into 2010. Our quotation activity is very high and new order levels have increased. Additionally, we believe this trend will continue This earnings release should be read in to increase in subsequent quarters. conjunction with the Company’s Annual Our decision to focus on the CVD/First Nano Report on Form 10-K for the fiscal year ended product lines for our long-term revenue growth December 31, 2009. and profitability is still proving to be successful The Private Securities Litigation Reform Act despite the conditions we experienced in 2009. of 1995 provides a “safe harbor” for forward- Our EasyTube product line is widely accepted looking statements. Certain information and continues to expand by serving University included in this press release (as well as and Research Laboratories, startup companies information included in oral statements or other and quality control departments throughout written statements made or to be made by CVD the world in fields such as Nanotubes (Carbon Equipment Corporation) contains statements and Boron Nitride), Graphene, Nanowires (Zinc that are forward-looking. All statements other Oxide, Gallium Nitride, Silicon,) Solar Cells, than statements of historical fact are hereby MEM’s, Energy, Semiconductors and Light Emitting Diodes. Our newest offering, the SiQC identified as “forward-looking statements, “as system is helping to analyze the feedstock such term is defined in Section 27A of the Securities Exchange Act of 1933, as amended,
260 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest and Section 21E of the Securities Exchange at the Annual Meeting, however, we urge you Act of 1934, as amended. Such forward looking to vote promptly in one of the following ways information involves a number of known and whether or not you plan to attend the Annual unknown risks and uncertainties that could Meeting: (1) by completing, signing and dating cause actual results to differ materially from the accompanying proxy card and returning it in those discussed or anticipated by management. the postage-prepaid envelope enclosed for that Potential risks and uncertainties include, among purpose, (2) by completing your proxy using other factors, conditions, success of CVD the toll-free number listed on the proxy card, Equipment Corporation’s growth and sales or (3) by completing your proxy via the Internet strategies, the possibility of customer changes by visiting the Website address listed on your in delivery schedules, cancellation of orders, proxy card. Should you receive more than potential delays in product shipments, delays one proxy card because your shares are held in obtaining inventory parts from suppliers in multiple accounts or registered in different and failure to satisfy customer acceptance names or addresses, please complete, sign, requirements. date and return each proxy card, or complete each proxy by telephone or the Internet, to ensure that all of your shares are voted. Your SKYWORKS – Notice of Annual Meeting of proxy may be revoked at any time prior to the Stockholders Annual Meeting. Any stockholder attending the 2010-04-01 Annual Meeting may vote at the meeting even if he or she previously submitted a proxy by mail, TO BE HELD ON TUESDAY, MAY 11, 2010 telephone or via the Internet. If your shares are held in “street name” by your broker (or The 2010 annual meeting of stockholders other nominee), your broker (or other nominee) of Skyworks Solutions, Inc., a Delaware will provide you with instructions on how you corporation, will be held at 2:00 p.m., local time, can vote your shares. Further, if you hold your on Tuesday, May 11, 2010, at the DoubleTree shares in “street name” you will not be able Hotel Boston — Bedford Glen, 44 Middlesex to attend the Annual Meeting, and your vote Turnpike, Bedford, Massachusetts (the “Annual in person at the Annual Meeting will not be Meeting”) to act upon the following proposals: effective, unless you have obtained and present a proxy issued in your name from the broker (or 1. To elect three members of the Board of other nominee). Directors of the Company to serve as Class II directors with terms expiring at the 2013 annual meeting of stockholders. Obducat AB (publ) publishes the Corporate 2. To ratify the selection by the Company’s Annual Report of 2009 Audit Committee of KPMG LLP as the 2010-03-31 independent registered public accounting firm The complete 2009 Annual Report of Obducat for the Company for fiscal year 2010. AB (publ) is now available on the company’s 3. To transact such other business as may web page. properly come before the Annual Meeting or any adjournment or postponement thereof. A printout may be obtained from the company via telephone +46 40 36 21 00, or by mail Only stockholders of record at the close of [email protected]. The English translation of business on March 23, 2010, are entitled to the Annual Report will be finalized and made notice of and to vote at the Annual Meeting. All available on the company’s web page shortly. stockholders are cordially invited to attend the Annual Meeting. To ensure your representation
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Veeco: Availability of Proxy Materials for the Nitronex announces $16m stock offering Annual Meeting of Stockholders 2010-03-26 2010-03-26 Nitronex has revealed a $16 million stock On Friday, May 14, 2010, Veeco Instruments offering. Inc. will hold its 2010 Annual Meeting of Stockholders at One Jericho Plaza, Jericho, NY Compound semiconductor manufacturer 11753. The meeting will begin at 9:30 a.m. Nitronex has announced plans for a $16 million (£10.74 million) stock offering in order to boost At the meeting, the below will be considered its operations.
1Election of two directors to hold office Triangle Business Journal reported the until the 2013 Annual Meeting of Stockholders; company plans to invest the funds in increasing 2. Approval of the Veeco its sales for both military and commercial Instruments Inc. 2010 Stock markets, as there is a growing trend for the Incentive Plan; incorporation of gallium nitride (GaN) on silicon 3. Approval of an amendment wafer technology into the next generation of to Veeco’s Certificate of products. Incorporation to increase the authorized shares of Veeco’s Chief executive officer of Nitronex Charlie common stock thereunder; Shalvoy said this is the third round of financing 4. Ratification of the appointment of our for the firm, with the company’s four main independent registered public backers - Alloy Ventures, Arch Ventures, accounting firm for fiscal year Diamondhead Ventures and Intersouth Partners 2010; and - having already input in excess of $50 million. 5. Any other business properly presented at the meeting or any He commented: “A lot of the seeds we planted adjournment or postponement a year, two years, even three years ago are thereof. now starting to sprout.”
Only stockholders who own stock at the close Nitronex was founded in 1999 and claims to be of business on March 19, 2010 can vote at at the forefront of developing GaN compound this meeting or any adjournments that may semiconductor products for use in radio take place. For ten days prior to the annual frequency applications. meeting, a list of these stockholders will be available for inspection at our principal executive offices, Terminal Drive, Plainview, IQE announces record revenues for 2009 NY 11803. A stockholder may examine the 2010-03-24 list for any legally valid purpose related to the meeting. Wafer manufacturer announces excellent year profits on the back of a record second half For more information about Veeco, please visit IQE, a global supplier of advanced our website at www.veeco.com. wafer products and wafer services to the semiconductor industry, has publishes its audited results for the year ended 31 December 2009. A strong second half of the year saw the company secure £3.0m full year operating profit and £3.7m free cash flow on the back of second half revenues of £31.2m the company
262 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest saw full-year revenues of £52.7m as opposed capital expenditure from 2008, mainly due to to £60.5m in 2008. market conditions.
Dr Drew Nelson, IQE Chief Executive, said, Nelson concluded, “We are at a very exciting “We made excellent progress in 2009 on all time in the Group’s history. We continue to fronts - strategic, operational and financial. We make excellent progress in our core wireless continue to build on our market leadership, and business, whilst at the same time are building by continued investment in R&D throughout an IP rich advanced semi-conductor ‘power the downturn. We now have a product range house’ that is uniquely positioned to take that addresses almost all of the rapidly advantage of the high growth markets that are growing markets for compound semiconductor rapidly emerging in areas such as solid state materials. lighting (SSL), CPV solar cells and consumer electronics. We are confident that IQE is well The first half of 2009 saw industry wide positioned to achieve continued growth in sales inventory adjustments but this was followed in 2010.” with sequential revenue growth of 46% in the second half demonstrating strong recovery. The company put cost saving measures into play Finisar Corporation Announces Closing of and these improved efficiencies boosted gross Public Offering of Common Stock margins to 22% resulting in £11.6m of gross 2010-03-24 profit as opposed to 2008 which saw 19% gross margins for a gross profit of £11.8m. Finisar Corporation, a technology leader for Nelson added. “We demonstrated a high fiber optic subsystems and components for degree of operational and financial resilience communication applications, today announced through a challenging year thanks to the closing of its previously announced public proactive management, and a committed and offering of 9,936,000 shares of its Common professional workforce. Stock at a price to the public of $14.00 per share. This has enhanced our customers’ confidence in us and builds on the strong relationships Today’s closing included the sale of the that we enjoy with them. We believe that 8,640,000 shares originally offered by the this positions us well to continue to grow our Company as well as 1,147,093 additional market share. I am extremely pleased with our shares sold by the Company and 148,907 progress on developing intellectual property shares sold by certain selling stockholders for the solar power and advanced electronics upon the full exercise of the underwriters’ markets. These advances are keeping us over-allotment option. Total gross proceeds at the forefront of emerging markets, and of the offering were $139.1 million. Net give me confidence that we will emerge as proceeds to the Company were $131.2 million, a clear leader as these markets move from after deducting underwriting discounts and development phase into production.” commissions and estimated offering expenses, and net proceeds to the selling stockholders In 2009 the company fulfilled a number of were $2.0 million, after deducting underwriting important goals including qualifying with all discounts and commissions. major wireless chip manufacturers. IQE also acquired NanoGaN bringing valuable IP. The Morgan Stanley & Co. Incorporated and company has accelerated high power LED and Jefferies & Company, Inc. served as joint book- blue/green laser development and developed running managers for the offering. Piper Jaffray significant new patents in solar and advanced & Co. and Morgan Keegan & Company, Inc. electronics. This was done despite a reduced acted as co-managers.
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The offering was made pursuant to an effective Jefferies & Company, Inc. are serving as joint shelf registration statement filed with the book-running managers for the offering. Piper Securities and Exchange Commission. This Jaffray & Co. and Morgan Keegan & Company, announcement shall not constitute an offer Inc. are acting as co-managers. to sell or the solicitation of an offer to buy securities nor shall there be any offer or sale of A shelf registration statement (including a these securities in any jurisdiction in which such base prospectus) has been filed with the offer, solicitation or sale would be unlawful. Securities and Exchange Commission, or SEC, for the offering to which this communication relates and is effective. Before you invest, AXT file their Annual Report you should read the base prospectus and the 2010-03-23 final prospectus supplement relating to the offering and other documents that Finisar has AXT file their Annual Report which provides a filed or will file with the SEC for more complete comprehensive overview of the company for information about Finisar and the offering. You the past year may get these documents for free by visiting the SEC website at www.sec.gov. Alternatively, See http://phx.corporate-ir.net/phoenix. you may obtain copies of the final prospectus zhtml?c=88339&p=IROL-secToc&TOC=aHR0c supplement and the accompanying base DovL2NjYm4uMTBrd2l6YXJkLmNvbS94bWwv prospectus from: Y29udGVudHMueG1sP2lwYWdlPTY4NDcwMz UmcmVwbz10ZW5r&ListAll=1 Morgan Stanley & Co. Incorporated Jefferies & Company, Inc
Finisar Corporation Announces Exercise of 180 Varick Street Over-Allotment Option 520 Madison Avenue 2010-03-22 New York, New York 10014 Finisar Corporation, a technology leader for New York, New York 10022 fiber optic subsystems and components for communication applications, today announced Attention: Prospectus Department that the underwriters of its previously Attention: Stephen M. Ficara announced public offering of Common Stock have exercised in full their over-allotment option E-mail: [email protected] to purchase an additional 1,147,093 shares of E-mail: [email protected] Common Stock from the Company and 148,907 shares from certain selling stockholders. Phone: (866) 718-1649 (toll free) The exercise of the over-allotment option Phone: (212) 284-3418 increases the size of the offering to 9,936,000 This announcement shall not constitute an shares, which will be sold at a price to the offer to sell or the solicitation of an offer to buy public of $14.00 per share, for total gross securities nor shall there be any offer or sale of proceeds of $139.1 million. Total proceeds to these securities in any jurisdiction in which such the Company from the sale of 9,787,093 shares offer, solicitation or sale would be unlawful. in the offering will be $131.5 million, and the selling stockholders will receive proceeds of $2.0 million. The offering is expected to close on March 23, 2010, subject to customary closing conditions. Morgan Stanley & Co. Incorporated and
264 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
Jordan Valley Semiconductors Announces About Jordan Valley Semiconductors Ltd. 10% year-to-year growth 2009 (http://www.jvsemi.com ) Jordan Valley 2010-03-19 Semiconductors Ltd. (JVS), the leader in X-ray metrology solutions for advanced Jordan Valley Semiconductors Ltd. (JVS), the semiconductor fabs, develops and supplies market leader in X-Ray metrology tools for the superior metrology equipment for quality control semiconductor and HB-LED manufacturing of thin films based on rapid, non-contacting industries, reported its 2009 year-end results and non-destructive X-ray technology. The today: company offers the Semiconductor Industry the most comprehensive array of tools, based on advanced XRR, XRF, HRXRD, WAXRD The Company surpassed its 2009 financial and SAXS technologies, ideal for both plan, managing to stay in the black with 10% product or blanket wafers. For the compound year-to-year growth, rather than an anticipated semiconductors industries, JVS offers fast and 8% loss. economic HRXRD tools for high-brightness LED (HB-LED) manufacturing. Jordan These positive results were generated, despite Valley’s investors include Clal Industries and the difficult market conditions, by technology Investments Ltd. (TASE: CII), Intel Capital ( buys and repeat orders for the company’s INTC) and Elron Electronics Industries Ltd. ( flagship product - the JVX6200(TM) multi- ELRN). With headquarters in Migdal Haemek channel metrology tools for FEOL, BEOL and Israel, the company has offices in Durham Wafer-level Packaging (WLP) applications. United Kingdom and Austin Texas USA, as well as representatives worldwide. During 2009, JVS also completed development of three new products, which were successfully launched. The JVX7200(TM), a revolutionary tool designed for challenging SiGe process Finisar Corporation, proposes to issue and monitoring, is the first ever production-worthy sell an aggregate of 8,640,000 shares tool combining HRXRD and XRR technology 2010-03-19 for strain, composition, and thickness measurement of SiGe stacks - a critical Finisar Corporation, a Delaware corporation element of the sub 45 nm technology nodes. proposes to issue and sell to the several The second product, the JVX6200(TM)RD, Underwriters an aggregate of 8,640,000 shares enables high-level Silicide and metal quality of the Common Stock, $0.001 par value per control, based on fast WAXRD technology. share, of the Company The third product, QC3(TM), which is based on well-established diffractometery technology, The Company also proposes to issue and is a powerful quality control solution for the sell to the several Underwriters, and certain emerging HB-LED market. stockholders of the Company (the “ Selling Stockholders ”) named in Schedule I hereto Isaac Mazor, CEO of JVS, said: “Although 2009 severally propose to sell to the several was the company’s most challenging year, we Underwriters, not more than an additional forged ahead with enhancement of our product 1,296,000 shares of the Common Stock, line while practicing caution and control on $0.001 par value per share, of the Company cash management, in order to provide the (the “ Additional Shares ”), of which not more semiconductor and HB-LED industries with than 1,147,093 shares are to be issued and more powerful metrology solutions. As of Q1 sold by the Company (the “ Company Additional 2010, we are already realizing rewards from Shares ”) and not more than 148,907 shares this strategy.” are to be sold by the Selling Stockholders (the
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“ Selling Stockholder Additional Shares ”), prospectus means the preliminary form of the Company and each Selling Stockholder the Prospectus dated March 15, 2010 and selling up to the amount set forth opposite distributed to prospective purchasers of the their respective name in Schedule I hereto, Shares. if and to the extent that you, as Managers of the offering, shall have determined to exercise, on behalf of the Underwriters, the TriQuint reports Q1 2010 revenue increase right to purchase such shares of common stock 2010-03-18 granted to the Underwriters in Section 3 hereof. The Firm Shares and the Additional Shares TriQuint has reported improved guidance for are hereinafter collectively referred to as the the three months ending April 3rd 2010. “ Shares .” The shares of Common Stock, $0.001 par value per share, of the Company to Radio frequency product manufacturer TriQuint be outstanding after giving effect to the sales has announced guidance for its first-quarter contemplated hereby are hereinafter referred results for 2010. to as the “ Common Stock .” The Company and the Selling Stockholders are hereinafter The company forecast a 47 per cent year- sometimes collectively referred to as the “ on-year increase in revenue to $175 million Sellers .” (£114.3 million) and reported non-GAAP earnings per share are expected to increase The Company has filed with the Securities and from its previous guidance of between $0.08 Exchange Commission (the “ Commission ”) a and $0.10 to $0.11. registration statement, including a prospectus, on Form S-3 (File No. 333-165479) relating In addition, the firm stated it will receive a tax to shelf securities (the “ Shelf Securities credit of approximately $1 million during the ”), including the Shares. The registration quarter ending April 3rd 2010. statement as amended to the date of this Agreement, including the information (if any) President and chief executive officer of TriQuint deemed to be part of the registration statement Ralph Quinsey made the announcement at its at the time of effectiveness pursuant to Rule annual Investor and Analyst Day in New York 430A under the Securities Act of 1933, as earlier today (March 18th). amended (the “ Securities Act ”), is hereinafter referred to as the “ Registration Statement TriQuint was founded in 1985 and specialises ”; the related prospectus covering the Shelf in the development of gallium arsenide (GaAs), Securities dated March 15, 2010, in the form gallium nitride, surface acoustic wave and bulk first used to confirm sales of Shares (or in the acoustic wave technologies. form first made available to the Underwriters by the Company to meet requests of purchasers It also claims to offer the industry’s largest pursuant to Rule 173 under the Securities selection of GaAs foundry processes and Act) is hereinafter referred to as the “ Base support services, as well as providing mobile Prospectus. ” The Base Prospectus, as devices and 3G and 4G cellular base stations. supplemented by the prospectus supplement specifically relating to the Shares in the form first used to confirm sales of the Shares Finisar Corporation Announces Pricing of (or in the form first made available to the Upsized Offering of Common Stock Underwriters by the Company to meet requests 2010-03-18 of purchasers pursuant to Rule 173 under the Securities Act) is hereinafter referred to as Finisar Corporation , a technology leader for the “ Prospectus ,” and the term preliminary fiber optic subsystems and components for
266 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest communication applications, today announced Jefferies & Company, Inc. 520 Madison Avenue that it has priced the previously announced New York, New York 10022 Attention: Stephen public offering of its Common Stock. M. Ficara E-mail: [email protected] Phone: (212) 284-3418 The Company increased the size of the offering from 7,200,000 shares to 8,640,000 shares, This announcement shall not constitute an which will be sold at a price to the public of offer to sell or the solicitation of an offer to buy $14.00 per share, for total gross proceeds securities nor shall there be any offer or sale of of $121.0 million. The offering is expected to these securities in any jurisdiction in which such close on March 23, 2010, subject to customary offer, solicitation or sale would be unlawful. closing conditions. The Company has also granted the underwriters a 30-day option to purchase up to an additional 1,147,093 StockerYale to Report 2009 Financial shares of Common Stock, and certain selling Results on March 18, 2010 stockholders have granted the underwriters an 2010-03-17 option to purchase up to an additional 148,907 shares, solely to cover over-allotments, StockerYale, Inc., a leading designer and if any. The Company will not receive any manufacturer of diode-based laser modules proceeds from any sale of shares by the selling and LED systems for industrial OEMs, medical stockholders. and defense markets, will report its financial results for the year ended December 31, 2009 Morgan Stanley & Co. Incorporated and at 4:30 p.m. on Thursday, March 18, 2010. Jefferies & Company, Inc. are serving as joint book-running managers for the offering. Piper Following the press release, management will Jaffray & Co. and Morgan Keegan & Company, conduct a conference call with simultaneous Inc. are acting as co-managers. webcast at 4:30 p.m. Eastern Daylight Time. Chairman and Chief Executive Officer Mark A shelf registration statement (including a Blodgett and Chief Financial Officer Tim Losik base prospectus) has been filed with the will discuss the Company’s 2009 results and Securities and Exchange Commission, or SEC, comment on business trends. for the offering to which this communication relates and is effective. Before you invest, Interested parties may participate in the live you should read the base prospectus and the conference call by dialing 877-941-0844 (U.S. final prospectus supplement relating to the toll-free) or 480-629-9645 (international dial- offering and other documents that Finisar has in ). No pass code is required for the call. A filed or will file with the SEC for more complete live webcast of the conference call may be information about Finisar and the offering. You accessed by visiting the Investor Relations: may get these documents for free by visiting Earnings Conference Call section of the the SEC website at www.sec.gov. Alternatively, StockerYale website at www.stockeryale.com. you may obtain copies of the final prospectus The webcast will be archived on the Company’s supplement and the accompanying base web site for six months. prospectus from:
Morgan Stanley & Co. Incorporated 180 Varick New shares from AIXTRON stock option Street New York, New York 10014 Attention: program will be traded under separate ISIN Prospectus Department E-mail: prospectus@ 2010-03-16 morganstanley.com Phone: (866) 718-1649 (toll free) AIXTRON AG worldwide leading provider of deposition equipment to the semiconductor
April/May 2010 www.compoundsemiconductor.net 267 news digest ♦ compound semiconductor industry, has a number of stock option preliminary prospectus supplement and programs in place that grant the members of accompanying base prospectus are available the Executive Board and employees the right on its website, www.sec.gov. Copies of the to purchase AIXTRON shares under certain preliminary prospectus supplement and base conditions prospectus may also be obtained from:
Under the terms of the stock option plan 2007, Morgan Stanley & Co. Incorporated stock options can currently be exercised. New 180 Varick Street shares resulting from exercised options are New York, New York 10014 not entitled for dividend for fiscal year 2009 Attention: Prospectus Department and will therefore be traded on the Frankfurt E-mail: [email protected] Stock Exchange under the separate ISIN Phone: (866) 718-1649 (toll free) DE000A1DAHX7 until and including the day of the AGM 2010 on May 18, 2010. Jefferies & Company, Inc. 520 Madison Avenue New York, New York 10022 Finisar Corporation Announces Common Attention: Stephen M. Ficara Stock Offering E-mail: [email protected] 2010-03-15 Phone: (212) 284-3418
Finisar Corporation, a technology leader for fiber optic subsystems and components for Finisar Corporation to Host Analyst and communication applications, today announced Investor Event at OFC Conference that it intends to offer, subject to market and 2010-03-15 other conditions, approximately 7,200,000 shares of its Common Stock. Finisar Corporation to Host Analyst and Investor Event at OFC Conference The Company will grant the underwriters the Finisar Corporation (NASDAQ: FNSR), a right to purchase up to an additional 931,093 technology leader in fiber optic solutions for shares of Common Stock, and certain selling high-speed networks, will host an Analyst stockholders will grant the underwriters the right and Investor Event during the OFC/NFOEC to purchase up to an additional 148,907 shares, Conference in San Diego, CA. solely to cover over-allotments, if any. The Company will not receive any proceeds from Jerry Rawls, Finisar’s executive Chairman of the sale of shares by the selling stockholders. the Board and Eitan Gertel, CEO, along with other members of the management team, Morgan Stanley & Co. Incorporated and will discuss Finisar’s business priorities, Jefferies & Company, Inc. are serving as joint the evolution of the Company and its key book-running managers for the offering. Piper technology differentiators. Additionally the Jaffray & Co. and Morgan Keegan & Company, executive officers will provide an update on Inc. are acting as co-managers. market conditions and respond to questions regarding Finisar’s strategy. The proposed offering will be made pursuant to an automatic shelf registration statement The event will be held at Hilton Gaslamp Hotel that was filed today with the U.S. Securities Marina Conference Room 401 K Street, San and Exchange Commission and became Diego, CA 92101 Phone: (619) 231-4040 effective immediately upon filing. A preliminary prospectus supplement relating to the offering When: Tuesday, March 23 from 5:00 p.m. to has also been filed with the SEC, and the 7:30 p.m.
268 www.compoundsemiconductor.net April/May 2010 compound semiconductor ♦ news digest
PT Schedule: Registration at Marina Company’s legal form from a German AG Conference Room: 5:00 p.m. (Aktiengesellschaft) into a European Company PT Keynote Address: 5:30 p.m. (Societas Europaea, SE) with the name PT Management Presentations: 5:45 p.m. AIXTRON SE. The company will continue to PT Q&A and Closing Reception: 7:30 p.m. have its registered office in Herzogenrath, PT To Register: Visit Finisar’s website:. http:// Germany. Together with their invitation to the investor.finisar.com/analyst_meeting_2010.cfm general meeting, the Shareholders of AIXTRON AG will receive detailed information under the Those who wish to attend in person must pre- relevant item of the AGM agenda regarding the register no later than March 21st. Due to limited contemplated conversion of the legal form. capacity, not all requests to attend in person Investor Conference Call may be accommodated. A live and archived webcast can be accessed from the same AIXTRON will host a financial analyst and website URL. investor conference call on Thursday, March 11, 2010, 3:00 p.m. CET (6:00 a.m. PST, 09:00 a.m. EST) to review the full-year 2009 results. AIXTRON reports highly successful final full From 2:50 p.m. CET (5:50 a.m. PST, 8:50 a.m. year 2009 results EST) you may dial in to the call at +49 (69) 2010-03-16
2010 Guidance: EUR 600m-EUR 650m New SEC Document(s) for Finisar Revenues, 25%plus EBIT, AIXTRON plans Corporation conversion into European Company (SE) 2010-03-10 AIXTRON AG worldwide leading provider of deposition equipment to the semiconductor Finisar releases quarterly report industry, today announced record financial To see report in full goto:http://investor.finisar. results for fiscal year 2009 and guidance for com/secfiling.cfm?filingid=950123-10-22609 2010 of EUR600m to EUR650m revenues with an EBIT margin of 25% or higher as well as its plan to convert from an AG into a SE company RFMD reports Q4 update structure. 2010-03-09
Outlook RFMD has delivered an update on its Q4 AIXTRON entered the year with a very performance. solid opening order backlog of EUR 190.9m (revalued from EUR 203.8m at USD 1.50/EUR RF Micro Devices (RFMD) has announced an as of January 1, 2010), all shippable in 2010. update to its fourth-quarter (Q4) predictions for AIXTRON Management believes that, on this the financial year ending April 3rd 2010. basis, AIXTRON can deliver total revenues of EUR 600m to EUR 650m and an EBIT margin The company has stated revenue is expected of 25%plus in fiscal year 2010. to total between $240 million (£160.1 million) and $245 million during the three-month period AIXTRON AG plans conversion into European - representing a 41 per cent year-on-year Company (SE) growth for the firm.
The Management Board and Supervisory As a result, RFMD expects to deliver quarterly Board of AIXTRON Aktiengesellschaft will earnings per share of approximately $0.11 to propose to its shareholders in the general $0.12 in Q4. meeting on 18 May 2010 to convert the The high-performance radio frequency
April/May 2010 www.compoundsemiconductor.net 269 news digest ♦ compound semiconductor components and compound semiconductor developer - which has its headquarters in Greensboro, North Carolina - made its forward- looking estimates based on non-GAAP financial measures.
As such, RFMD has been unable to provide a consolidated set of results for the last 12 months. Indeed, the company noted these figures may therefore vary slightly from its final year-end results.
RFMD officially announced these findings at the Raymond James 31st Annual Institutional Investors Conference in Orlando, Florida, which took place this afternoon (March 9th).
Annual Filings by Kopin 2010-03-09
Annual report which provides a comprehensive overview of the company for the past year
Click here to view the report: http://phx. corporate-ir.net/phoenix.zhtml?c=93548&p=irol- sec
Finisar Corporation Announces Third Quarter Financial Results 2010-03-04
Finisar Corporation, a technology leader in fiber optic solutions for high-speed networks, today announced financial results for its third fiscal quarter ended January 31, 2010. To view financial results in full goto: http://investor.finisar.com/releaseDetail. cfm?ReleaseID=449106
270 www.compoundsemiconductor.net April/May 2010