PRINTED CIRCUIT BOARD WINDINGS-BASED ULTRA LOW-PROFILE POWER CONDITIONING CIRCUITS for SDR APPLICATION SYSTEMS Wonseok Lim (
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Imperial College London Department of Physics Graphene Field Effect
Imperial College London Department of Physics Graphene Field Effect Transistors arXiv:2010.10382v2 [cond-mat.mes-hall] 20 Jul 2021 By Mohamed Warda and Khodr Badih 20 July 2021 Abstract The past decade has seen rapid growth in the research area of graphene and its application to novel electronics. With Moore's law beginning to plateau, the need for post-silicon technology in industry is becoming more apparent. Moreover, exist- ing technologies are insufficient for implementing terahertz detectors and receivers, which are required for a number of applications including medical imaging and secu- rity scanning. Graphene is considered to be a key potential candidate for replacing silicon in existing CMOS technology as well as realizing field effect transistors for terahertz detection, due to its remarkable electronic properties, with observed elec- tronic mobilities reaching up to 2 × 105 cm2 V−1 s−1 in suspended graphene sam- ples. This report reviews the physics and electronic properties of graphene in the context of graphene transistor implementations. Common techniques used to syn- thesize graphene, such as mechanical exfoliation, chemical vapor deposition, and epitaxial growth are reviewed and compared. One of the challenges associated with realizing graphene transistors is that graphene is semimetallic, with a zero bandgap, which is troublesome in the context of digital electronics applications. Thus, the report also reviews different ways of opening a bandgap in graphene by using bi- layer graphene and graphene nanoribbons. The basic operation of a conventional field effect transistor is explained and key figures of merit used in the literature are extracted. Finally, a review of some examples of state-of-the-art graphene field effect transistors is presented, with particular focus on monolayer graphene, bilayer graphene, and graphene nanoribbons. -
What Is a Neutral Earthing Resistor?
Fact Sheet What is a Neutral Earthing Resistor? The earthing system plays a very important role in an electrical network. For network operators and end users, avoiding damage to equipment, providing a safe operating environment for personnel and continuity of supply are major drivers behind implementing reliable fault mitigation schemes. What is a Neutral Earthing Resistor? A widely utilised approach to managing fault currents is the installation of neutral earthing resistors (NERs). NERs, sometimes called Neutral Grounding Resistors, are used in an AC distribution networks to limit transient overvoltages that flow through the neutral point of a transformer or generator to a safe value during a fault event. Generally connected between ground and neutral of transformers, NERs reduce the fault currents to a maximum pre-determined value that avoids a network shutdown and damage to equipment, yet allows sufficient flow of fault current to activate protection devices to locate and clear the fault. NERs must absorb and dissipate a huge amount of energy for the duration of the fault event without exceeding temperature limitations as defined in IEEE32 standards. Therefore the design and selection of an NER is highly important to ensure equipment and personnel safety as well as continuity of supply. Power Transformer Motor Supply NER Fault Current Neutral Earthin Resistor Nov 2015 Page 1 Fact Sheet The importance of neutral grounding Fault current and transient over-voltage events can be costly in terms of network availability, equipment costs and compromised safety. Interruption of electricity supply, considerable damage to equipment at the fault point, premature ageing of equipment at other points on the system and a heightened safety risk to personnel are all possible consequences of fault situations. -
Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters
Article Measurement Error Estimation for Capacitive Voltage Transformer by Insulation Parameters Bin Chen 1, Lin Du 1,*, Kun Liu 2, Xianshun Chen 2, Fuzhou Zhang 2 and Feng Yang 1 1 State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China; [email protected] (B.C.); [email protected] (F.Y.) 2 Sichuan Electric Power Corporation Metering Center of State Grid, Chengdu 610045, China; [email protected] (K.L.); [email protected] (X.C.); [email protected] (F.Z.) * Correspondence: [email protected]; Tel.: +86-138-9606-1868 Academic Editor: K.T. Chau Received: 01 February 2017; Accepted: 08 March 2017; Published: 13 March 2017 Abstract: Measurement errors of a capacitive voltage transformer (CVT) are relevant to its equivalent parameters for which its capacitive divider contributes the most. In daily operation, dielectric aging, moisture, dielectric breakdown, etc., it will exert mixing effects on a capacitive divider’s insulation characteristics, leading to fluctuation in equivalent parameters which result in the measurement error. This paper proposes an equivalent circuit model to represent a CVT which incorporates insulation characteristics of a capacitive divider. After software simulation and laboratory experiments, the relationship between measurement errors and insulation parameters is obtained. It indicates that variation of insulation parameters in a CVT will cause a reasonable measurement error. From field tests and calculation, equivalent capacitance mainly affects magnitude error, while dielectric loss mainly affects phase error. As capacitance changes 0.2%, magnitude error can reach −0.2%. As dielectric loss factor changes 0.2%, phase error can reach 5′. -
The Reliability of the Silicon Nitride Dielectric in Capacitive MEMS
The Pennsylvania State University The Graduate School Department of Materials Science and Engineering THE RELIABILITY OF THE SILICON NITRIDE DIELECTRIC IN CAPACITIVE MEMS SWITCHES A Thesis in Materials Science and Engineering by Abuzer Dogan © 2005 Abuzer Dogan Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science August 2005 I grant The Pennsylvania State University the nonexclusive right to use this work for the University's own purposes and to make single copies of the work available to the public on a not-for-profit basis if copies are not otherwise available. Abuzer Dogan We approve the thesis of Abuzer Dogan. Date of Signature Susan Trolier-McKinstry Professor of Ceramic Science and Engineering Thesis Advisor Michael Lanagan Associate Professor of Engineering Science and Mechanics and Materials Science and Engineering Mark Horn Associate Professor of Engineering Science and Mechanics James P. Runt Professor of Polymer Science Associate Head for Graduate Studies iii ABSTRACT Silicon nitride thin film dielectrics can be used in capacitive radio frequency micro-electromechanical systems switches since they provide a low insertion loss, good isolation, and low return loss. The lifetime of these switches is believed to be adversely affected by charge trapping in the silicon nitride. These charges cause the metal bridge to be partially or fully pulled down, degrading the on-off ratio of the switch. Little information is available in the literature providing a fundamental solution to this problem. Consequently, the goals of this research were to characterize SixNy–based MIM (Metal-Insulator-Metal) capacitors and capacitive MEMS switches to measure the current-voltage response. -
MOSFET Technology Scaling, Leakage Current, and Other Topics
Chapter 7 MOSFET Technology Scaling, Leakage Current and Other Topics 7.1 Technology Scaling Small is Beautiful YEAR 1992 1995 1997 1999 2001 2004 2007 2010 Technology 0.5 0.35 0.25 0.18 0.13 90 65 45 Generation µµµm µµµm µµµm µµµm µµµm nm nm nm • New technology node every three years or so. Defined by minimum metal line width. • All feature sizes, e.g. gate length, are ~70% of previous node. • Reduction of circuit size by 2 good for cost. Semiconductor Devices for Integrated Circuits (C. Hu) Slide 7-1 International Technology Roadmap for Semiconductors, 1999 Edition Year of Shipment 1999 2002 2005 2008 2011 2014 DRAM metal half pitch 180 130 100 70 50 35 (nm) MPU physical Lg (nm) 140 85 65 45 32 22 Tox (nm) 1.5-1.8 1.5-1.9 1-1.5 0.8-1.2 0.6-0.8 0.5-0.6 VDD 1.5-1.8 1.2-1.5 0.9-1.2 0.6-0.9 0.5-0.6 0.3-0.6 µµµ µµµ Ion,HP ( A/ m) 750/350 750/350 750/350 750/350 750/350 750/350 µµµ Ioff,HP (nA/ m) 5 10 20 40 60 160 µµµ µµµ Ion,LP ( A/ m) 490/230 490/230 490/230 490/230 490/230 490/230 µµµ Ioff,LP (pA/ m) 7 10 20 40 80 160 No known solutions •Vdd is reduced at each node to contain power consumption in spite of rising transistor density and frequency •Tox is reduced to raise I on for speed consideration Semiconductor Devices for Integrated Circuits (C. -
A Design Methodology and Analysis for Transformer-Based Class-E Power Amplifier
electronics Communication A Design Methodology and Analysis for Transformer-Based Class-E Power Amplifier Alfred Lim 1,2,* , Aaron Tan 1,2 , Zhi-Hui Kong 1 and Kaixue Ma 3,* 1 School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore; [email protected] (A.T.); [email protected] (Z.-H.K.) 2 GLOBALFOUNDRIES, Singapore 738406, Singapore 3 School of Microelectronics, Tianjin University of China, Tianjin 300027, China * Correspondence: [email protected] (A.L.); [email protected] (K.M.) Received: 28 March 2019; Accepted: 26 April 2019; Published: 2 May 2019 Abstract: This paper proposes a new technique and design methodology on a transformer-based Class-E complementary metal-oxide-semiconductor (CMOS) power amplifier (PA) with only one transformer and two capacitors in the load network. An analysis of this amplifier is presented together with an accurate and simple design procedure. The experimental results are in good agreement with the theoretical analysis. The following performance parameters are determined for optimum operation: The current and voltage waveform, the peak value of drain current and drain-to-source voltage, the output power, the efficiency and the component values of the load network are determined to be essential for optimum operation. The measured drain efficiency (DE) and power-added efficiency (PAE) is over 70% with 10-dBm output power at 2.4 GHz, using a 65 nm CMOS process technology. Keywords: Class-E; transformer-based; silicon CMOS; wireless communication; power amplifier 1. Introduction With the explosive growth of wireless and mobile communication systems adoption, the demand for compact, low-cost and low power portable transceiver has increased dramatically. -
60 Ghz CMOS Amplifiers Using Transformer- Coupling and Artificial
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 44, NO. 5, MAY 2009 1425 60 GHz CMOS Amplifiers Using Transformer- Coupling and Artificial Dielectric Differential Transmission Lines for Compact Design Tim LaRocca, Member, IEEE, Jenny Yi-Chun Liu, Student Member, IEEE, and Mau-Chung Frank Chang, Fellow, IEEE Abstract—57–65 GHz differential and transformer-coupled power and variable-gain amplifiers using a commercial 90 nm digital CMOS process are presented. On-chip transformers com- bine bias, stability and input/interstage matching networks to enable compact designs. Balanced transmission lines with artifi- cial dielectric strips provide substrate shielding and increase the effective dielectric constant up to 54 for further size reduction. Consequently, the designed three-stage power amplifier occupies only an area of only 0.15 mmP. Under a 1.2 V supply, it consumes 70 mA and obtains small-signal gains exceeding 15 dB, saturated output power over 12 dBm and associated peak power-added efficiency (PAE) over 14% across the band. The variable-gain amplifier, based on the same principle, achieved a peak gain of 25 dB with 8 dB of gain variation. Fig. 1. Differential transmission line with floating artificial dielectric strips. Index Terms—CMOS, differential amplifiers, millimeter-wave amplifiers, power amplifiers, transformers. minimal size to allow a high level of integration within a I. INTRODUCTION low-cost 60 GHz CMOS transceiver. Artificial dielectric strips, as shown in Fig. 1, are inserted be- CMOS transformer-coupled power amplifier and vari- neath a differential line [2], [3] and coplanar waveguide [4] on A able-gain amplifier for the unlicensed 57–64 GHz CMOS as a method to reduce the physical length of the trans- spectrum are presented with high efficiency and compact mission line by increasing the effective dielectric constant while designs. -
How To: Wire a Dimmable Transformer
How to: Wire a Dimmable Transformer Using a hardwired dimmable transformer from Inspired LED, you can create a Important Note: This driver is to be installed in accordance with Article 450 of the National Electric fully integrated LED system for your home or business. Our transformers take the 120V AC running through standard wires and convert them down to a more Code by a qualified electrician. Transformers should always be mounted in well-ventilated, LED friendly 12V DC. When done properly, this simple install will allow you to accessible area such as an attic or cabinet. Never utilize a compatible wall switch or dimmer in just a few simple steps… cover or seal transformer inside of a wall. To Install: You will need… - Hardwire dimmable transformer Tip: Route the AC wires from transformer through rigid spacer to - Compatible wall switch the open box extender. This will give you more room to tie 12VDC - 14-16 AWG Class 2 in-wall/armored cable transformer and dimmer wiring together. - 16-22 AWG thermostat/speaker wire OR Tip: To connect using Inspired LED cable, Inspired LED interconnect cable cut off one end connector, split and strip. - Junction box(es) (optional if needed) The side with white lettering is positive. - Wire nuts & cable strippers 1. Turn off power to location Use standard Inspired LED where transformer is being cables to run from transformer Standard end connectors installed, be sure switch and to standard 3.5mm jacks or Tiger Paws® LEDs are in place Use bulk cable to run from 2. Open transformer and Tip: For in-wall wiring applications, use 18-22 AWG 2-conductor cable transformer to screw terminals Screw Terminal remove knockout holes to gain Class 2 or higher (commonly sold as in-wall speaker or thermostat wire). -
Leakage Current and Breakdown Electric-Field Studies on Ultrathin
APPLIED PHYSICS LETTERS 87, 182904 ͑2005͒ Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs ͒ H. C. Lin and P. D. Yea School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 G. D. Wilk Advanced Semiconductor Materials (ASM) America, 3440 East University Drive, Phoenix, Arizona 85034 ͑Received 29 June 2005; accepted 1 September 2005; published online 25 October 2005͒ Atomic-layer deposition ͑ALD͒ provides a unique opportunity to integrate high-quality gate dielectrics on III-V compound semiconductors. We report detailed leakage current and breakdown electric-field characteristics of ultrathin Al2O3 dielectrics on GaAs grown by ALD. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of state-of-the-art SiO2 on Si, not counting the high-k dielectric properties for Al2O3. A Fowler-Nordheim tunneling analysis on the GaAs/Al2O3 barrier height is also presented. The breakdown electric field of Al2O3 is measured as high as 10 MV/cm as a bulk property. A significant enhancement on breakdown electric field up to 30 MV/cm is observed as the film thickness approaches to 1 nm. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2120904͔ Al2O3 is a widely used insulating material for gate di- sured as high as 10 MV/cm for films thicker than 50 Å, electric, tunneling barrier, and protection coating due to its which is near the bulk breakdown electric field for ALD excellent dielectric properties, strong adhesion to dissimilar Al2O3. A significant enhancement on breakdown electric materials, and its thermal and chemical stabilities. -
Transformer Design & Design Parameters
Transformer Design & Design Parameters - Ronnie Minhaz, P.Eng. Transformer Consulting Services Inc. Power Transmission + Distribution GENERATION TRANSMISSION SUB-TRANSMISSION DISTRIBUTION DISTRIBUTED POWER 115/10 or 20 kV 500/230 230/13.8 132 345/161 161 161 230/115 132 230 230/132 115 345 69 500 34 Generator Step-Up Auto-transformer Step-down pads transformer transformer Transformer Consulting Services Inc. Standards U.S.A. • (ANSI) IEEE Std C57.12.00-2010, standard general requirements for liquid- immersed distribution, power and regulation transformers • ANSI C57.12.10-2010, safety requirements 230 kV and below 833/958 through 8,333/10,417 KVA, single-phase, and 750/862 through 60,000/80,000/100,000 KVA, three-phase without load tap changing; and 3,750/4,687 through 60,000/80,000/100,000 KVA with load tap changing • (ANSI) IEEE C57.12.90-2010, standard test code for liquid-immersed distribution, power and regulating transformers and guide for short-circuit testing of distribution and power transformers • NEMA standards publication no. TR1-2013; transformers, regulators and reactors Canada CAN/CSA-C88-M90(reaffirmed 2009); power transformers and reactor; electrical power systems and equipment Transformer Consulting Services Inc. Transformer Design: • Power rating [MVA] • Core • Rated voltages (HV, LV, TV) • Insulation coordination (BIL, SIL, ac tests) • Short-circuit Impedance, stray flux • Short-circuit Forces • Loss evaluation • Temperature rise limits, Temperature limits • Cooling, cooling method • Sound Level • Tap changers (DTC, LTC) Transformer Consulting Services Inc. Transformer Design: Simple Transformer • Left coil - input (primary coil) – Source – Magnetizing current • Right coil - output (secondary coil) – Load • Magnetic circuit Transformer Consulting Services Inc. -
Rectifier Troubleshooting
TROUBLESHOOTING PRELIMINARY • To troubleshoot, one must first have a working knowledge of the individual parts and their relation to one another. • Must have adequate hand tools • Must have basic instrumentation: Accurate digital voltmeter with diode test mode for silicon units Clamp-on AC – DC ammeter Voltage detectors Cell phone very useful • Observe all safety precautions RECTIFIER COMPONENTS • Cabinet - protects the rectifier components from the elements • Circuit Breaker - serves as an on - off switch and overload protection • Transformer - reduces the line voltage to a useable level for the cathodic protection system and isolates the CP system from the incoming power • Rectifier Stack - used to change A.C. to D.C. (Silicon) or (Selenium) • Fuses - to protect the more expensive components (like Diodes, ACSS,etc. • Meters - used to indicate D.C. Voltage and D.C. Current • Shunts - used to accurately measure circuit current •Arrestors - protects the rectifier from voltage and lightning surges TROUBLESHOOTING - BASIC An adequate inspection and maintenance program will greatly reduce the possibility of rectifier failure. Rectifier failures do occur, however, and the field technician must know how to find and repair troubles quickly to reduce rectifier down time. MAJOR CAUSES OF RECTIFIER FAILURES 1. NEGLECT 2. AGE 3. LIGHTNING TROUBLESHOOTING PRECAUTIONS • Turn the RECTIFIER and the MAIN DISCONNECT OFF! • Be careful when testing a rectifier which is in operation. Safety first • Consult the rectifier wiring diagram before troubleshooting • Correct polarity must be observed when using DC instruments • Rectifier should be in the OFF position before using an OHMETER • Common sense prevails TROUBLESHOOTING PROCEDURES Most rectifier troubles are simple and do not require extensive detailed troubleshooting procedures. -
Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................