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EE 143 Microfabrication Technology Fall 2014 EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition EE 143 Microfabrication Technology Fall 2014 Prof. Clark T.-C. Nguyen Dept. of Electrical Engineering & Computer Sciences University of California at Berkeley Berkeley, CA 94720 Lecture Module 3: Film Deposition EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 1 Thin Film Deposition EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 2 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Thin Film Deposition • Methods for film deposition: Evaporation Sputter deposition Chemical vapor deposition (CVD) Plasma enhanced chemical vapor deposition (PECVD) Epitaxy Electroplating Atomic layer deposition (ALD) Evaporation: • Heat a metal (Al,Au) to the point of vaporization • Evaporate to form a thin film covering the surface of the Si wafer • Done under vacuum for better control of film composition EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 3 Evaporation Filament Evaporation System: 1. Pump down to vacuum reduces film contamination and allows + - better thickness control 2. Heat W filament melt Al, wet filament 3. Raise temperature W filament evaporate Al Al staples kT mean free path 2 Pd 2 Vacuum Pump wafer k = Boltzmann Constant T = temperature P = pressure d = diameter of gas molecule EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 4 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Evaporation (cont.) • can be ~60m for a 4Å particle at 10-4 Pa (-0.75 Torr) thus, at 0.75 Torr, get straight line path from Al staple filament to wafer Problem: Shadowing & Step Coverage Source Problem: line of sight deposition Get an open Solns: i. Rotate water during Source evaporation ii. Etch more gradual sidewalls Better Solution: forget evaporation sputter deposit the film! EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 5 Sputter Deposition • Use an energetic plasma to dislodge atoms from a material target, allowing the atoms to settle on the wafer surface Not as low a Target vacuum as (Al, SiO2, Si2N4, ZnO, Ti, …) evaporation Ar+ Ar+ (~100 Pa) (750 mTorr) plasma Vacuum Pump wafer EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 6 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Sputter Deposition Process • Step-by-step procedure: 1. Pump down to vacuum 760 Torr (~ 100 Pa) 1 Pa 9.810-6 atm 0.0075012 Torr atm 750 mTorr 2. Flow gas (e.g., Ar) 3. Fire up plasma (create Ar+ ions) apply dc-bias (or RF for non-conductive targets) 4. Ar+ ions bombard target (dislodge atoms) 5. Atoms make their way to the wafer in a more random fashion, since at this higher pressure, ~60m for a 4Å particle; plus, the target is much bigger • Result: better step coverage! EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 7 Problems With Sputtering 1. Get some Ar in the film 2. Substrate can heat up up to ~350oC, causing nonuniformity across the wafer but it still is more uniform than evaporation! 3. Stress can be controlled by changing parameters (e.g., flow rate, plasma power) from pass to pass, but repeatability is an issue • Solution: use Chemical Vapor Deposition (CVD) EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 8 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Chemical Vapor Deposition (CVD) • Even better conformity than sputtering • Form thin films on the surface of the substrate by thermal decomposition and/or reaction of gaseous compounds Desired material is deposited directly from the gas phase onto the surface of the substrate Can be performed at pressures for which (i.e., the mean free path) for gas molecules is small This, combined with relatively high temperature leads to Excellent Conformal Step Coverage! Types of films: polysilicon, SiO2, silicon nitride, SiGe, Tungsten (W), Molybdenum (M), Tantalum (Ta), Titanium (Ti), … EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 9 The CVD Process Reactant gas (+ inert diluting gases) are introduced into the reaction chamber Gas species move (a) to the substrate Gas Flow – Gas Stream Reactants adsorb Atoms migrate (b) onto the substrate and react (e) (e) chemically to (d) (c)(d) Reaction by-products form films desorbed from surface Wafer This determines the ultimate Energy required to drive reactions supplied conformality of the film (i.e., by several methods: Thermal (i.e., heat), determines step photons, electrons (i.e., plasma) coverage) EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 10 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition The CVD Process (cont.) Step-by-Step CVD Sequence: Gas phase processes a) Reactant gases (+ inert diluting gases) are introduced into reaction chamber b) Gas species move to the substrate c) Reactants adsorbed onto the substrate d) Atoms migrate and react chemically to form films This determines to a large extent whether or not a film is conformal (i.e. better step coverage) processes Surface Not Conformal Conformal low T High T not enough adatom migration Plenty of adatom migration e) Reaction by-products desorbed and removed from reaction chamber EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 11 CVD Modeling Simplified Schematic: Ng = conc. of reactant molecules in the gas stream N g Ns = conc. of reactant molecules at J the surface g J s Js = flux of gas molecules at the surface Ns ∙ Jg = flux of molecules diffusing in from the gas stream surface Effective diffusion const. Governing Equations: for the gas molecule J s ks Ns [ks surface reaction rate const.] Dg Vapor phase mass- J N N h N N g g s g g s transfer coefficient EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 12 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition CVD Modeling (cont.) J s J s J g J , N s k s J h J g Otherwise reactants will J hg N g hg N g build up somewhere! ks ks h k h g s g J1 hg N g J N g ks||hg N g ks ks hg flux J growth rate # molecules incorporated unit volume N J kshg N g N g ks || hg growth rate N ks hg N N EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 13 CVD Modeling (cont.) • Case: ks >> hg surface reaction rate >> mass transfer rate N g growth rate h (mass-transfer-limited) g N • Case: hg >> ks mass transfer rate >> surface reaction rate N growth rate k g (surface-reaction-limited) s N Ea kT ~ R o (Arrhenius character) EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 14 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Temperature Dependence of CVD log (growth Reaction Rate rate) Mass Limited Regime Transport Limited Regime Slope = Ea Arrhenius behavior 1 T Dep. Rate less dependent on T, here temperature for better control, better to operate here (@ higher T) EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 15 Atmospheric Pressure Reactor (APCVD) • Once used for silicon dioxide passivation in integrated circuits • Substrates fed continuously • Large diameter wafers • Need high gas flow rates • Mass transport-limited regime (high pressure, so tougher for gas to get to the wafer surface) • Problems/Issues: Wafers lay flat, and thus, incorporate foreign particles Poor step coverage EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 16 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Low Pressure Reactor (LPCVD) • Many films available: polysilicon, SiGe, Si3N4, SiO2, phosphosilicate glass (PSG), BPSG, W • Temp.: 300 1150°C • Press.: 30 250 Pa (200mTorr 2Torr) • Reaction rate limited; reduced pressure gives gas molecular high diffusivity; can supply reactants very fast! • Can handle several • Problems: hundred wafers at a Low dep. rate (compared to atm.) time Higher T (than atmospheric) • Excellent uniformity In hot wall reactors, get deposition on tube walls (must clean) EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 17 Plasma-Enhanced CVD Reactor (PECVD) • RF-induced glow discharge + thermal energy to drive reactions allows lower temperature deposition with decent conformability • Still low pressure • Problems: Pin-holes Non-stoichiometric films Incorporation of H2, N2, O2 contaminants in film; can lead to outgassing or bubbling in later steps EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 18 Copyright @ 2014 Regents of the University of California at Berkeley EE 143: Microfabrication Technology CTN 10/2/14 Lecture Module 3: Film Deposition Polysilicon CVD Polysilicon Deposition: Fairly high temperature conformal 600°C SiH4 Si + 2H2 (thermal decomposition of silane) (conformal high T) LPCVD (25 to 150 Pa) 100-200Å/min • In situ doping of polysilicon: n-type: add PH3 (phosphine) or Arsine gases (but greatly reduces dep. rate) p-type: add diborane gas (greatly increases dep. Rate) EE 143: Microfabrication Technology LecM 3 C. Nguyen 2/14/10 19 Silicon Oxide CVD Silicon Dioxide Deposition: • After metallization (e.g., over aluminum) Temperature cannot exceed the Si-Al eutectic pt.: 577oC Actually, need lower than this (<500oC) to prevent hillocks from growing on Al surfaces Similar issues for copper (Cu) metallization • Low temperature reactions: SiH4 + O2 SiO2 + 2H2 LPCVD (silane) 300-500°C LTO Reactions 4PH3 + 5O2 2P2O5 + 6H2 (phosphine) 300-500°C Phosphosilicate glass (PSG) • Above reactions: not very conformal step coverage need higher T for this EE 143: Microfabrication Technology LecM 3 C.
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