Rochester Institute of Technology RIT Scholar Works Theses 2-2006 Development of nickel silicide for integrated circuit technology Phu H. Do Follow this and additional works at: https://scholarworks.rit.edu/theses Recommended Citation Do, Phu H., "Development of nickel silicide for integrated circuit technology" (2006). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact
[email protected]. Development of Nickel Silicide for Integrated Circuit Technology A thesis submitted in partial fulfillment of the requirements for the degree of Master of Science in Materials Science & Engineering By PhuDo Materials Science & Engineering Department Rochester Institute of Technology February 2006 Dr. Sean L. Rommel Sean L. Rommel Date: (Thesis Advisor) Santosh K. Kurinec Dr. Santosh Kurinec Date: 0$ (J2f 10 , (Committee Member) , Dr. Surendra K. Gupta S. K. Gupta Date: C.3 I ~2/0-6 (Committee Member) Dr. K.S.V. Santhanam Santhanam KSV Date: !i~i ~ a (Department Head) PhuDo MS Thesis Development of Nickel Silicide for Integrated Circuit Technology By PhuH. Do I, Phu H. Do, hereby grant pennission to the Wallace Memorial Library of the Rochester Institute of Technology to reproduce this document in whole or in part that any reproduction will not be for commercial use or profit. Phu H. Do March 23, 2006 First M. Last Month Day, Year 11 Phu Do MS Thesis Acknowledgement First, I like to thank my thesis advisor, Dr.