United States Patent ( 10 ) Patent No.: US 10,629,695 B2 Tsai Et Al
US010629695B2 United States Patent ( 10 ) Patent No.: US 10,629,695 B2 Tsai et al. (45 ) Date of Patent : Apr. 21 , 2020 (54 ) SEMICONDUCTOR DEVICE AND METHOD (52 ) U.S. CI. FOR FABRICATING THE SAME CPC HOIL 29/516 (2013.01 ) ; HOLL 21/02181 ( 2013.01 ) ; HOIL 21/02189 ( 2013.01 ) ; ( 71) Applicant: UNITED MICROELECTRONICS (Continued ) CORP . , Hsin - Chu ( TW ) ( 58 ) Field of Classification Search CPC HO1L 29/516 ; HO1L 21/02189 ; HOIL ( 72 ) Inventors: Shih -Hung Tsai, Tainan ( TW ) ; 21/02181; HO1L 29/4966 ; HOLL Po -Kuang Hsieh , Kaohsiung ( TW ) ; 21/28167 ; Yu - Ting Tseng , Tainan ( TW ) ; Cheng - Ping Kuo , Pingtung County (Continued ) ( TW ) ; Kuan -Hao Tseng , Kaohsiung (56 ) References Cited (TW ) U.S. PATENT DOCUMENTS (73 ) Assignee : UNITED MICROELECTRONICS 8,785,995 B2 7/2014 Dubourdieu et al . CORP ., Hsin - Chu ( TW ) 9,196,696 B2 11/2015 Xie ( * ) Notice : Subject to any disclaimer, the term of this (Continued ) patent is extended or adjusted under 35 U.S.C. 154 ( b ) by 0 days . FOREIGN PATENT DOCUMENTS ( 21) Appl. No .: 16 /239,541 CN 100550391 C 10/2009 (22 ) Filed : Jan. 4 , 2019 OTHER PUBLICATIONS Li, Title : Sub -60mV - Swing Negative -Capacitance FinFET without (65 ) Prior Publication Data Hysteresis , IEEE 2015 . US 2019/0140068 A1 May 9 , 2019 (Continued ) Primary Examiner — Victor A Mandala Related U.S. Application Data (74 ) Attorney, Agent, or Firm Winston Hsu (63 ) Continuation of application No. 15 /678,125 , filed on Aug. 16 , 2017 , now Pat . No. 10,211,313 . (57 ) ABSTRACT A semiconductor device includes a metal gate on a substrate , (30 ) Foreign Application Priority Data a polysilicon layer on the metal gate , a hard mask on the polysilicon layer , and a source /drain region adjacent to two Jul.
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