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D MATERIALS SPUTTERING D TARGETS • Manufacturing Processes ...................... D 03 • Sputtering Targets ............................ D 04 • Sputter Yield Guide ............................ D 17 • Backing Plates ................................ D 20 • Bonding of Sputtering Targets ................. D 21 MATERIALS / INORGANICS & THIN FILMS GUIDE D 01 MATERIALS SPUTTERING TARGETS Manufacturing Processes Most sputtering target can be fabricated into a wide range of shapes and sizes. There are some technical limitations to the maximum size for a given single piece construction. In such cases, a multi-segmented target can be produced with the individual segments joined together by butt or beveled joints. OUR SPUTTERING TARGETS AT A GLANCE • Pure metal and alloy targets (99% to 99.9999%), industrial application targets: Al, Ni/Cr, Mo, Ta, Ti, Ti/Al, W... • Precious metal targets: Ag, Au, Ir, Pd, Pt, Rh... and alloys on request. • Hot pressed oxides and intermetallic targets without binder: Al2O3, AZO, ITO, PZT, SiO2, ZnO... • Circular, rectangular, Delta, ring, tube and any shape on request. • All targets are delivered with a certificate of analysis. D 02 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALS SPUTTERING TARGETS Manufacturing Processes D Manufacturing Processes Neyco manufactures sputtering targets from a wide variety of compositions in various purity levels, allowing customers to match targets to their spe- cific requirements. We employ a number of different target manufacturing techniques to yield optimum grain size, density, hardness and composition. The specific manufacturing process depends on the properties of the target material and the end use of the target. Manufacturing techniques used include: • Casting • Ceramic Sintering • Cold and Hot Isostatic Pressing • Extrusion • Hot and Cold Rolling • Inert Gas Hot-Pressing • Plasma Spray • Precision Machining • Vacuum Hot-Pressing • Vacuum Melting MATERIALS / INORGANICS & THIN FILMS GUIDE D 03 MATERIALS SPUTTERING TARGETS ManufacturingSputtering Targets Processes Sputtering Targets Al Sb 13 ALUMINUM Base 51 ANTIMONY Base CHEMICAL FORMULA PURITY* CHEMICAL FORMULA PURITY* Aluminum Al 99.99 / 99.999 Antimony Sb 99.5 / 99.999 Aluminum Antimonide AlSb 99.99 Antimony Sulfide Sb2S3 99.99 Aluminum Chromium (95:5) AlCr 99.95 Antimony Telluride Sb2Te 3 99.999 Aluminum Copper (99.5:0.5) AlCu 99.995 Aluminum Copper (90:10) / 99.99 / 99.995 / AlCu (92:8) / (95:5) / (98:2) / (99:1) 99.999 Ba Aluminum Copper Silicon AlCuSi 99.999 (98:1:1) 56 BARIUM Base Aluminum Magnesium AlMg 99.995 Aluminum Magnesium Silicon AlMgSi 99.99 CHEMICAL FORMULA PURITY* Aluminum Neodymium AlNd 99.95 Barium Ba 99.9 BaFe O Aluminum Nickel Boron Barium Ferrite 12 19 99.9 AlNiB 99.99 (95.5:4:0.5at%) Barium Fluoride BaF2 99.9 / 99.995 BaPbO Aluminum Nickelide Al3Ni 99.9 Barium Lead Oxide 3 99.5 BaMnO 99 / 99.5 / 99.8 / Barium Manganese Oxide 3 99.9 Aluminum Nitride AlN 99.9 Barium Oxide BaO 99.95 Aluminum Nitride Titanium Barium Strontium AlN-TiN 99.5 BaSrTiO 99.95 Nitride (50:50at%) Titanate, BST 3 BaTiO 99.99 / 99.995/ Barium Titanate 3 99.9 / 99.95 Aluminum Oxide Al O 2 3 99.999 Barium Zirconate BaZrO3 99.99 Aluminum Oxide Tungsten Barium Zirconium Al O -WO 99.99 BaZrTiO 99.9 Oxide (95:5at%) 2 3 3 Titanate 3 Aluminum Oxide Yttrium Al O -Y O 99.99 Oxide (95:5at%) 2 3 2 3 Aluminum Silicon Copper AlSiCu 99.95 Aluminum Silicon (98:2) / (99:1) AlSi 99.99 / 99.999 Aluminum Silicon AlSi 99.999 *All purities indicated in the tables are based on metallic impurities. D 04 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALSMATERIALS SPU TT SERINPUTTG ERINTARGGE TARTS G EManufacturingTS Sputtering Processes Targets Bi Cd 83 BISMUTH Base 48 CADMIUM Base CHEMICAL FORMULA PURITY* CHEMICAL FORMULA PURITY* 99.9 / 99.99 / 99.9 / 99.99 / Bismuth Bi Cadmium Cd 99.999 99.999 Bismuth Aluminum Oxide BiAlO 99.99 Cadmium Oxide CdO 99.99 3 D Bismuth Antimonide BiSb 99.99 99.99 / Cadmium Selenide CdSe 99.995 Bismuth Antimony BiSbTe 99.999 Telluride Cadmium Stannate Cd2SnO4 99.99 BiCoO Bismuth Cobalt Oxide 3 99.95 99.99 / Cadmium Sulfide CdS 99.999 Bismuth Ferrite BiFeO3 99.99 Bismuth Gallate BiGa2O3 99.99 Cadmium Telluride CdTe 99.999 Bismuth Indium Oxide BiInO3 99.9 Cadmium Tin CdSn 99.99 Bismuth Iron Titanium Bi Fe Ti O 99.9 Oxide 1.02 0.98 0.02 3 Bismuth Manganese Oxide BiMnO 99.95 3 Ca Bismuth Neodymium (Bi Nd )Ti O 99.9 Titanium Oxide, BNdT 3.15 0.85 3 12 20 CALCIUM Base 99.9 / 99.999 / Bismuth Oxide Bi O 2 3 99.99 CHEMICAL FORMULA PURITY* Bismuth Samarium Ferrite BiSmFeO3 99.9 99.99 / Calcium Fluoride CaF 2 99.995 Bismuth Selenide Bi2Se3 99.999 CaMnO Bismuth Silicon Oxide Bi2SiO5 99.99 Calcium Manganate 3 99.95 Bismuth Strontium Calcium Calcium Oxide CaO 99.99 Bi2Sr2Ca1Cu2O8 99.9 Copper Oxide, BSCCO (2212) Calcium Titanate CaTiO3 99.99 Bismuth Strontium Calcium Bi Sr Ca Cu O 99.9 Copper Oxide, BSCCO (2223) 2 2 2 3 10 Bismuth Telluride Bi Te 99.999 2 3 Ce Bismuth Telluride Selenide BiTe1-xSex 99.999 58 CERIUM Base Bismuth Titanate Bi2Ti4O11 99.9 Bismuth Vanadate BiVO4 99.99 CHEMICAL FORMULA PURITY* Cerium Ce 99.9 / 99.95 Cerium Fluoride CeF3 99.9 B Cerium Gadolinium CeGd 99.95 5 BORON Base Cerium Oxide CeO2 99.9 CHEMICAL FORMULA PURITY* 99.9 / 99.97 / Boron B 99.999 Boron Carbide B4C 99.5 / 99.9 97.5 / 99.5 / Boron Nitride BN 99.9 *All purities indicated in the tables are based on metallic impurities. MATERIALS / INORGANICS & THIN FILMS GUIDE D 05 MATERIALS SPUTTERING TARGETS ManufacturingSputtering Targets Processes Cs Co 55 CESIUM Base 27 COBALT Base CHEMICAL FORMULA PURITY* CHEMICAL FORMULA PURITY* Cesium Iodide CsI 99.99 / 99.999 99.8 / 99.95 / Cobalt Co 99.99 Cobalt Boride Co2B 99.9 Cobalt Chromium CoCrAl 99.95 Cr Aluminum 24 CHROMIUM Base Cobalt Chromium Iron CoCrFeAl 99.9 Aluminum CHEMICAL FORMULA PURITY* Cobalt Chromium Oxide CoCr2O4 99.9 99.8 / 99.9 / Cobalt Gadolinium CoGd 99.95 Chromium Cr 99.95 / 99.99 Cobalt Iron (50:50at%) CoFe 99.95 Chromium Aluminide CrAl 99.99 Cobalt Iron (50:50) / Chromium Boride CrB2 99.5 (60:40) / (70:30) / (84:16) / CoFe 99.9 / 99.95 (90:10) Chromium Carbide Cr3C2 99.5 / 99.95 Chromium Diboride CrB2 99.5 Cobalt Iron Boron CoFeB 99.95 Cr N Chromium Nitride 2 99.5 Cobalt Oxide Co3O4 99.95 99.8 / 99.9 / Cobalt Oxide CoO 99.95 Chromium Oxide Cr O 2 3 99.95 Cobalt Silicide CoSi2 99.5 Chromium Silicide CrSi2 99.5 / 99.9 Cobalt Silicon CoSi 99.95 Chromium Silicide Cr3Si 99.5 Chromium Titanium CrTi 99.9 (80:20) / (95:5) Chromium Nickel (60:40) CrNi 99.9 Chromium Nickel CrNiAl 99.9 Aluminum Chromium Silicon CrSiO 99.5 / 99.9 Monoxide (60:40) / (70:30) Chromium Ruthenium CrRu 99.95 *All purities indicated in the tables are based on metallic impurities. D 06 MATERIALS / INORGANICS & THIN FILMS GUIDE MATERIALSMATERIALS SPU TT SERINPUTTG ERINTARGGE TARTS G EManufacturingTS Sputtering Processes Targets Cu Eu 29 CoPPER Base 63 EUROPIUM Base CHEMICAL FORMULA PURITY* CHEMICAL FORMULA PURITY* Europium Eu 99.9 99.99 / Copper Cu 99.995 / Europium Oxide Eu2O3 99.95 99.997 / 99.999 D Copper Aluminum Oxide CuAl2O3 99.9 Copper Aluminum Oxide CuAlO2 99.99 Copper Boron (95:5at%) CuB 99.9 Gd 64 Copper Gallium CuGa 99.99 / 99.995 GADOLINIUM Base Copper Germanide CuGe 99.99 Copper Indium CuIn 99.99 CHEMICAL FORMULA PURITY* Copper Indium Gallium CuInGa 99.99 Gadolinium Gd 99.9 / 99.95 Gd O Copper Indium Gallium Gadolinium Oxide 2 3 99.9 CuInGaSe 99.99 Selenide 2 Copper Iron (99:1) CuFe 99.95 Copper Magnesium CuMg 99.99 Ga Copper Nickel CuNi 99.99 31 GALLIUM Base Copper Oxide CuO 99.7 / 99.9 Copper Oxide Cu2O 99.9 Copper Selenide CuSe 99.99 CHEMICAL FORMULA PURITY* Gallium Antimonide GaSb 99.999 Copper Selenide Cu2Se 99.5 Gallium Arsenide GaAs 99.999 Copper Sulfide Cu2S 99.95 Ga O -In O -ZnO Copper Sulfide CuS 99.999 Gallium Indium Zinc Oxide 2 3 2 3 99.99 Copper Telluride Cu Te 99.99 Gallium Iron Magnesium 2 GaFeMgO 99.9 Oxide 3 Copper Tin (90:10) CuSn 99.99 Copper Titanium Oxide CuTiO 99.99 99.995 / 3 Gallium Oxide Ga O 2 3 99.999 Gallium Phosphide GaP 99.999 Gallium Selenide Ga Se 99.99 Dy 2 3 66 DYSPROSIUM Base Ge CHEMICAL FORMULA PURITY* 32 GERMANIUM Base Dysprosium Dy 99.95 CHEMICAL FORMULA PURITY* Germanium Ge 99.999 Er Germanium Antimonide GeSb 99.999 Germanium Antimony 68 ERBIUM Base Ge Sb Te 99.999 Telluride, GST 2 3 5 Germanium Oxide GeO2 99.99 CHEMICAL FORMULA PURITY* Germanium Selenide GeSe 99.999 Erbium Er 99.95 Germanium Telluride GeTe 99.999 Erbium Fluoride ErF3 99.99 Erbium Oxide Er O 99.95 / 99.99 2 3 *All purities indicated in the tables are based on metallic impurities. MATERIALS / INORGANICS & THIN FILMS GUIDE D 07 MATERIALS SPUTTERING TARGETS ManufacturingSputtering Targets Processes Au Ho 79 GOLD Base 67 HOLMIUM Base CHEMICAL FORMULA PURITY* CHEMICAL FORMULA PURITY* 99.95:99.99 / Holmium Ho 99.95 Gold Au 99.999 Holmium Manganese HoMnO 99.95 Gold Boride AuB 99.99 Oxide 3 Gold Germanium (88:12) AuGe 99.999 Gold Palladium (60:40) AuPd 99.99 Gold Tin (70:30) AuSn 99.99 Gold Zinc (92:8) AuZn 99.99 In 49 INDIUM Base See Section E - Precious Metals in this catalogue about Presentation and Precious Metal Recycling.
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  • Microwave Assisted Synthesis of Thermoelectric Nanostructures

    Microwave Assisted Synthesis of Thermoelectric Nanostructures

    ROYAL INSTITUTE OF TECHNOLOGY Microwave assisted synthesis of thermoelectric nanostructures: p- and n-type Bi2-xSbxTe3 VIKING ROOSMARK Master of Science Thesis Department of Applied Physics KTH – Royal Institute of Technology Stockholm, Sweden 2018 1 (37) Supervisor Mr. Bejan Hamawandi [email protected] Examiner Prof. Muhammet S. Toprak [email protected] Biomedical and X-Ray Physics KTH/Albanova SE-106 91 Stockholm TRITA-SCI-GRU 2018:416 2 (37) Abstract Improving the way energy can be obtained, is becoming increasingly important from both environmental and economical aspects. Thermoelectric (TE) materials can be a stepping stone in the right direction for better energy management, seeing how they can recycle waste heat and generate electricity from energy that otherwise would be wasted. In recent years TE materials have been the focus of several projects to find materials which can easily and inexpensively be used in devices to harvest heat and produce clean energy, which is aimed by this project. TE nanomaterials based on the Bi2-xSbxTe3 system with different stoichiometry (x) have been synthesized using a bottom-up microwave (MW) assisted synthesis method. Nanopowders have been consolidated with SPS into pellets to examine their TE transport properties. The purpose of the project was to fabricate p- and n-type TE materials with comparable thermal expansion, for the purpose of obtaining a high efficiency TE device with high durability. The MW assisted synthesis shows highly reproducible results with nanopowders having good uniformity with low to none batch to batch variation in the powder composition. One of the most important aspects of this technique is the process speed, the MW heating itself only takes 2-3 min to synthesize the desired TE material using the developed thermolysis route.
  • Material Safety Data Sheet

    Material Safety Data Sheet

    LTS Research Laboratories, Inc. Safety Data Sheet Germanium Antimony Telluride ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 1. Product and Company Identification ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Trade Name: Germanium Antimony Telluride Chemical Formula: Ge2Sb2Te5 Recommended Use: Scientific research and development Manufacturer/Supplier: LTS Research Laboratories, Inc. Street: 37 Ramland Road City: Orangeburg State: New York Zip Code: 10962 Country: USA Tel #: 855-587-2436 / 855-lts-chem 24-Hour Emergency Contact: 800-424-9300 (US & Canada) +1-703-527-3887 (International) ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– 2. Hazards Identification ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– Signal Word: Danger Hazard Statements: H301: Toxic if swallowed H315: Causes skin irritation H319: Causes serious eye irritation H331: Toxic if inhaled H335: May cause respiratory irritation H373: May cause damage to organs through prolonged or repeated exposure Precautionary Statements: P210: Keep away from heat/sparks/open flames/hot surfaces – No Smoking P240: Ground/bond container and receiving equipment P241: Use explosion-proof electrical/ventilating/light/ equipment P261: Avoid breathing dust/fume/vapor P264: Wash thoroughly after handling P280: Wear protective gloves/protective clothing/eye protection/face protection P301+P310: IF SWALLOWED: