Committed to excellence
Memory Technologies
V 2.0
Non-Volatile & Volatile ■ ■ ■ ■ Non-Volatile MemoryTechnologies ■ Volatile Memory arewhich soldered down, and removable “module devices”. Whatever you memory are looking for Rutronik has solution. the data are retained technologies are split into "volatile" – data devices are lost power when is removed; fast access – time and "non-volatile" – devices Whether it is standard commodity DRAM or leadinglike –we edge FRAM technology have solution. the In tables the shown Rutronik to offer pleased is very you acomprehensive range fromtechnologiesof memory some the of world’s leading suppliers. Memory Technologies EEPROM NOR FRAM Ruler ReRAM AIC Module SD/ microSD NAND CFast Compact Flash Type mSATA M.2 e∙MMC USB Stick UFS 2.5“
interface to 256 Pseudo SRAM/IoT from RAM 16 DDR through to DDR4 DDR Modules: arange from DDR4 and mobile, low power devices fromtechnology SDRAM through to SDRAM: acomprehensive range of NVRAM: fromNVRAM: 16to 256 technologies from 64 SRAM: Low-power, fast and synchronous Mbit with ADMUX, QSPI or OPI I²C Serial I²C SPI PCIe PCIe SPI PCIe Parallel USB Serial Parallel SATA PATA Interface SPI SATA SATA 2D MLC Microwire Parallel PCIe SATA 3D TLC without power; slowwithout power; You access speed. that see products can also those are devices, embedded between divided Kbit to 64 Kbit 64 Mbit 128 Mbit bit 256 512 ■ ■ ■ ■ ■ Non-Volatile Memory ■
ReRam: with SPIReRam: interface interfaces, 1 interfaces, 4 with I2C,SPIFRAM: and parallel 512 and NOR devices, parallel Flash: serial integrated 1to 128 devices, ECC NAND and parallel with Flash: serial, EEPROM: with I e·MMC: 4to 128 1
Kbit to 256 16to 128 2
Kbit through to 2 Kbit to 4
Mbit Mbit 4
2 GByte in2DMLC C, SPI and microwire GByte in3DTLC Mbit 8
16
Kbit Mbit Gbit 32
64
■ ■ ■ ■ ■ Removable Devices
Solid StateSolid Drive (SSD): 2.5”, mSATA and M.2 Modules: USB, PATA and SATA Compact Flash: 128 USB Stick SD and micro SD card: 128 128
256
512
1
Mbit to 128 2
Mbit to 128 4
Gbit 8
Gbit 16
Mbit 32
64
128
* underdevelopment Volatile MemoryTechnologies Module SDRAM SRAM Technology Pseudo SRAM Synchronous 256 Low Power
LPDDR4 LPDDR3 LPDDR2 NVRAM LPDDR LPSDR DDR4 DDR3 DDR4 DDR3 DDR2 DDR2 Type DDR DDR SDR Fast 512 64
8 128 1
MByte 16
32 256 2
Kbit 64
512 128 4
256
8 1
512
1 16 2
Gbit 2
32 3 4
4 64 8
6 9 8 128 16
Mbit 12 GByte
18 16
256 32
36 32
512 72 64 64
144 128
128 256 1
512
256 2
128
1 256 512
2 MByte 4
512
4 * 8 1
6
1 8 Tbit 16 2
12 * * Gbit 16
2 32 4
TByte 24 * * GByte 32
4 64 8
64
8 128 128 16 16
256 32
256 32 512 64
Removable Devices Embedded Devices Removable Embedded Devices Committed to excellence
Linecard Memories
Technology Type Alliance Apacer AP Memory ESMT/ EliteMT Fujitsu Giantec GoodRam Infineon + Cypress Insignis Intel Kioxia Nanya Rohm ST Swissbit Transcend Zentel EEPROM Serial ReRAM Serial FRAM Serial/ Parallel Serial NOR Parallel NOR Serial NAND NAND e·MMC™ UFS Flash SD/ micro SD Compact Flash/ Cfast Flash Module (USB/ PATA/ SATA) SSD (2.5"/ mSATA/ M.2) Add-in Card USB Sticks SDR DDR DDR2 DDR3 DDR4 LPSDR LPDDR LPDDR2 SDRAM LPDDR3 LPDDR4 Pseudo SRAM/ IoT RAM SDRAM Module DDR Module DDR2 Module DDR3 Module DDR4 Module Low Power Fast SRAM Synchronous NVRAM U11 | ENG | HMB | Specifications subject to change without notice. Please note, there could be some limitations for some franchised product lines in several countries. For more information, please contact our sales team. our sales please contact information, more countries. For several in lines franchised product limitations for some be some could there Please note, without notice. to change Specifications subject HMB | | | ENG U11
Embedded devices R Removeable devices
ESMT / EliteMT
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Rutronik Elektronische Bauelemente GmbH | Industriestr. 2 | 75228 Ispringen | Germany Phone:+49 7231 801- 0 | [email protected] | www.rutronik.com