Committed to excellence Memory Technologies V 2.0 Non-Volatile & Volatile Memory Technologies Volatile Memory Technologies Rutronik is very pleased to offer you a comprehensive range of memory technologies from some of the world’s leading suppliers. Kbit Mbit Gbit Whether it is standard commodity DRAM or leading edge technology like FRAM – we have the solution. In the tables shown Type 8 16 32 64 128 256 512 1 2 3 4 6 8 12 16 32 64 128 256 512 1 2 4 6 8 12 16 24 32 64 128 256 512 technologies are split into "volatile" devices – data are lost when power is removed; fast access time – and "non-volatile" devices – Technology data are retained without power; slow access speed. You can also see that products are divided between embedded devices, those Low Power Fast which are soldered down, and removable “module devices”. Whatever memory you are looking for Rutronik has the solution. SRAM Synchronous 9 18 36 72 144 NVRAM Volatile Memory Non-Volatile Memory Removable Devices SDR DDR 2 ■ SRAM: Low-power, fast and synchronous ■ EEPROM: with I C, SPI and microwire ■ SD and micro SD card: 128 Mbit to 128 Gbit DDR2 technologies from 64 Kbit to 64 Mbit interfaces, 1 Kbit through to 2 Mbit ■ Compact Flash: 128 Mbit to 128 Gbit DDR3 ■ NVRAM: from 16 to 256 Kbit ■ ReRam: with SPI interface DDR4 ■ Modules: USB, PATA and SATA LPSDR Embedded Devices ■ SDRAM: a comprehensive range of ■ FRAM: with I2C, SPI and parallel ■ Solid State Drive (SSD): 2.5”, mSATA and M.2 technology from SDRAM through to interfaces, 4 Kbit to 4 Mbit SDRAM LPDDR ■ USB Stick DDR4 and mobile, low power devices LPDDR2 ■ NOR Flash: serial and parallel devices, LPDDR3 ■ DDR Modules: a range from 512 Kbit to 256 Mbit * * LPDDR4 DDR through to DDR4 ■ NAND Flash: serial, parallel and with * * * Pseudo SRAM ■ Pseudo SRAM/IoT RAM from 16 Mbit integrated ECC devices, 1 to 128 Gbit DDR to 256 Mbit with ADMUX, QSPI or OPI ■ e·MMC: 4 to 128 GByte in 2D MLC DDR2 interface 16 to 128 GByte in 3D TLC DDR3 Module DDR4 Removable * under development 128 256 512 1 2 4 8 16 32 64 Non-Volatile Memory Technologies MByte GByte bit Kbit Mbit Gbit Tbit Type Interface 64 128 256 512 1 2 4 8 16 32 64 128 256 512 1 2 4 8 16 32 64 128 256 512 1 2 4 8 16 32 64 128 256 512 1 2 4 8 16 32 64 128 256 I²C EEPROM SPI Microwire ReRAM SPI I²C FRAM SPI Parallel Serial NOR Parallel Serial Embedded Devices NAND Parallel 2D MLC e∙MMC 3D TLC UFS SD/ microSD Compact Flash CFast USB Module PATA SATA SATA 2.5“ PCIe SATA M.2 PCIe Removable Devices AIC PCIe Ruler PCIe mSATA SATA USB Stick 64 128 256 512 1 2 4 8 16 32 64 128 256 512 1 2 4 8 16 32 MByte GByte TByte Committed to excellence Linecard Memories Technology Type Alliance Apacer AP Memory ESMT/ EliteMT Fujitsu Giantec GoodRam Infineon + Cypress Insignis Intel Kioxia Nanya Rohm ST Swissbit Transcend Zentel EEPROM Serial ReRAM Serial FRAM Serial/ Parallel Serial NOR Parallel NOR Serial NAND NAND e·MMC™ UFS Flash SD/ micro SD Compact Flash/ Cfast Flash Module (USB/ PATA/ SATA) SSD (2.5"/ mSATA/ M.2) Add-in Card USB Sticks SDR DDR DDR2 DDR3 DDR4 LPSDR LPDDR LPDDR2 SDRAM LPDDR3 LPDDR4 Pseudo SRAM/ IoT RAM SDRAM Module DDR Module DDR2 Module DDR3 Module DDR4 Module Low Power Fast SRAM Synchronous NVRAM U11 | ENG | HMB | Specifications subject to change without notice. Please note, there could be some limitations for some franchised product lines in several countries. For more information, please contact our sales team. information, please contact our sales countries. For more lines in several limitations for some franchised product could be some without notice. Please note, there | HMB |Specifications subject to change U11 | ENG Embedded devices R Removeable devices ESMT / EliteMT Your Contact Rutronik Elektronische Bauelemente GmbH | Industriestr. 2 | 75228 Ispringen | Germany Phone:+49 7231 801- 0 | [email protected] | www.rutronik.com.