The Miller Effect and the Cascode Amplifier
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PH-218 Lec-12: Frequency Response of BJT Amplifiers
Analog & Digital Electronics Course No: PH-218 Lec-12: Frequency Response of BJT Amplifiers Course Instructors: Dr. A. P. VAJPEYI Department of Physics, Indian Institute of Technology Guwahati, India 1 High frequency Response of CE Amplifier At high frequencies, internal transistor junction capacitances do come into play, reducing an amplifier's gain and introducing phase shift as the signal frequency increases. In BJT, C be is the B-E junction capacitance, and C bc is the B-C junction capacitance. (output to input capacitance) At lower frequencies, the internal capacitances have a very high reactance because of their low capacitance value (usually only a few pf) and the low frequency value. Therefore, they look like opens and have no effect on the transistor's performance. As the frequency goes up, the internal capacitive reactance's go down, and at some point they begin to have a significant effect on the transistor's gain. High frequency Response of CE Amplifier When the reactance of C be becomes small enough, a significant amount of the signal voltage is lost due to a voltage-divider effect of the source resistance and the reactance of C be . When the reactance of Cbc becomes small enough, a significant amount of output signal voltage is fed back out of phase with the input (negative feedback), thus effectively reducing the voltage gain. 3 Millers Theorem The Miller effect occurs only in inverting amplifiers –it is the inverting gain that magnifies the feedback capacitance. vin − (−Av in ) iin = = vin 1( + A)× 2π × f ×CF X C Here C F represents C bc vin 1 1 Zin = = = iin 1( + A)× 2π × f ×CF 2π × f ×Cin 1( ) Cin = + A ×CF 4 High frequency Response of CE Amp.: Millers Theorem Miller's theorem is used to simplify the analysis of inverting amplifiers at high-frequencies where the internal transistor capacitances are important. -
Cascode Amplifiers by Dennis L. Feucht Two-Transistor Combinations
Cascode Amplifiers by Dennis L. Feucht Two-transistor combinations, such as the Darlington configuration, provide advantages over single-transistor amplifier stages. Another two-transistor combination in the analog designer's circuit library combines a common-emitter (CE) input configuration with a common-base (CB) output. This article presents the design equations for the basic cascode amplifier and then offers other useful variations. (FETs instead of BJTs can also be used to form cascode amplifiers.) Together, the two transistors overcome some of the performance limitations of either the CE or CB configurations. Basic Cascode Stage The basic cascode amplifier consists of an input common-emitter (CE) configuration driving an output common-base (CB), as shown above. The voltage gain is, by the transresistance method, the ratio of the resistance across which the output voltage is developed by the common input-output loop current over the resistance across which the input voltage generates that current, modified by the α current losses in the transistors: v R A = out = −α ⋅α ⋅ L v 1 2 β + + + vin RB /( 1 1) re1 RE where re1 is Q1 dynamic emitter resistance. This gain is identical for a CE amplifier except for the additional α2 loss of Q2. The advantage of the cascode is that when the output resistance, ro, of Q2 is included, the CB incremental output resistance is higher than for the CE. For a bipolar junction transistor (BJT), this may be insignificant at low frequencies. The CB isolates the collector-base capacitance, Cbc (or Cµ of the hybrid-π BJT model), from the input by returning it to a dynamic ground at VB. -
Cascode Techniques
Analysis and Design of Analog Integrated Circuits Lecture 8 Cascode Techniques Michael H. Perrott February 15, 2012 Copyright © 2012 by Michael H. Perrott All rights reserved. M.H. Perrott Review of Large Signal Analysis of Current Mirrors Vdd Δ V2 I I 1 2 1 μ W2 2 λ nCox (VGS2-VTH) (1+ 2Vds2) I2 2 L = 2 I 1 W 2 1 μ C 1(V -V ) (1+λ V ) 2 n ox GS1 TH 1 ds1 M L1 2 ΔV M1 Vds2 > Vdsat2 1 V +ΔV V +ΔV Δ Δ Δ Δ Vss=0 TH 1 TH 2 But, VTH+ V1=VTH+ V2 V1 = V2 λ I2 W2 L1 (1+ 2Vds2) I2 = λ I1 W1 L2 (1+ 1Vds1) M2 in Saturation Current Mismatch setting due to Vds based on difference M2 in Triode geometry Note: for accurate ratio, set L1 = L2 Vds2 Vdsat2 M.H. Perrott 2 The Issue of Vds Mismatch in Current Mirrors V λ dd I2 W2 (1+ 2Vds2) = λ I1 W1 (1+ 1Vds1) I1 I2 Current Mismatch setting due to Vds based on difference geometry V V ds1 ds2 Note: we are assuming L = L M1 M2 1 2 . Issue: Current I2 can vary significantly as a function of the drain voltage of M2 - We often want a tightly controlled current set only by I1 and transistor sizes . How do we improve the current mirror matching performance? M.H. Perrott 3 Cascoded Current Source I Rth R ref d3 thd3 Ibias Vbias V M bias 3 M3 M ro1 2 M1 . Offers increased output resistance - Reduces small signal dependence of output current on the output voltage of the current source - From Lecture 6, we derived: . -
CHAPTER 3 Frequency Response of Basic BJT and MOSFET Amplifiers (Review Materials in Appendices III and V)
CHAPTER 3 Frequency Response of Basic BJT and MOSFET Amplifiers (Review materials in Appendices III and V) In this chapter you will learn about the general form of the frequency domain transfer function of an amplifier. You will learn to analyze the amplifier equivalent circuit and determine the critical frequencies that limit the response at low and high frequencies. You will learn some special techniques to determine these frequencies. BJT and MOSFET amplifiers will be considered. You will also learn the concepts that are pursued to design a wide band width amplifier. Following topics will be considered. Review of Bode plot technique. Ways to write the transfer (i.e., gain) functions to show frequency dependence. Band-width limiting at low frequencies (i.e., DC to fL). Determination of lower band cut-off frequency for a single-stage amplifier – short circuit time constant technique. Band-width limiting at high frequencies for a single-stage amplifier. Determination of upper band cut-off frequency- several alternative techniques. Frequency response of a single device (BJT, MOSFET). Concepts related to wide-band amplifier design – BJT and MOSFET examples. 3.1 A short review on Bode plot technique Example: Produce the Bode plots for the magnitude and phase of the transfer function 10s Ts() , for frequencies between 1 rad/sec to 106 rad/sec. (1ss / 1025 )(1 / 10 ) We first observe that the function has zeros and poles in the numerical sequence 0 (zero), 2 5 2 10 (pole), and 10 (pole). Further at ω=1 rad/sec i.e., lot less than the first pole (at ω=10 rad/sec), Ts() 10 s. -
Optimal High Performance Self Cascode CMOS Current Mirror
View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Global Journal of Computer Science and Technology (GJCST) Global Journal of Computer Science and Technology Volume 11 Issue 15 Version 1.0 September 2011 Type: Double Blind Peer Reviewed International Research Journal Publisher: Global Journals Inc. (USA) Online ISSN: 0975-4172 & Print ISSN: 0975-4350 Optimal High Performance Self Cascode CMOS Current Mirror By Vivek Pant, Shweta Khurana Kurukshetra University Kurukshetra Abstract - In this paper the current mirror presented, having low voltage and mixed mode structure has been proposed. The performance of self cascade MOSFET current mirror is optimized with high output impedance and can operate at 1 V or below. Simulation results conform to Analog Mentor tools having Design Architect for schematics and Eldonet for SPICE simulation, with input reference current of 20μA. This review paper presents a comparative performance study of self cascode current mirror with other current mirrors. Keywords : current mirrors, cascode current mirror, low voltage analog circuit. GJCST Classification : I.2.9 Optimal High Performance Self Cascode CMOS Current Mirror Strictly as per the compliance and regulations of: © 2011. Vivek Pant, Shweta Khurana.This is a research/review paper, distributed under the terms of the Creative Commons Attribution-Noncommercial 3.0 Unported License http://creativecommons.org/licenses/by-nc/3.0/), permitting all non commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Optimal High Performance Self Cascode CMOS Current Mirror Vivek Pantα, Shweta KhuranaΩ Abstract - In this paper the current mirror presented, having I = I (W/L) 2 (1+λVds2) (3) out ref low voltage and mixed mode structure has been proposed. -
High-Frequency Amplifier Response
Section H5: High-Frequency Amplifier Response Now that we’ve got a high frequency models for the BJT, we can analyze the high frequency response of our basic amplifier configurations. Note: in the circuits that follow, the actual signal source (vS) and its associated source resistance (RS) have been included. As discussed in the low frequency response section of our studies, we always knew that this source and resistance was there but we just started our investigations with the input to the transistor (vin). Remember - the analysis process is the same and the relationship between vS and vin is a voltage divider! Again, in some instances in the following discussion, I will be using slightly different notation and taking a different approach than your author. As usual, if this results in confusion, or you are more comfortable with his technique, let me know and we’ll work it out. High Frequency Response of the CE and ER Amplifier The generic common-emitter amplifier circuit of Section D2 is reproduced to the left below and the small signal circuit using the high frequency BJT model is given below right (based on Figures 10.17a and 10.17b of your text). Note that all external capacitors are assumed to be short circuits at high frequencies and are not present in the high frequency equivalent circuit (since the external capacitors are large when compared to the internal capacitances – recall that Zc=1/jωC gets small as the frequency or capacitance gets large). We can simplify the small signal circuit by making the following observations and approximations: ¾ Cce is very small and may be neglected. -
A Design Basis for Composite Cascode Stages Operating in the Subthreshold/Weak Inversion Regions
Brigham Young University BYU ScholarsArchive Theses and Dissertations 2012-01-28 A Design Basis for Composite Cascode Stages Operating in the Subthreshold/Weak Inversion Regions Taylor Matt Waddel Brigham Young University - Provo Follow this and additional works at: https://scholarsarchive.byu.edu/etd Part of the Electrical and Computer Engineering Commons BYU ScholarsArchive Citation Waddel, Taylor Matt, "A Design Basis for Composite Cascode Stages Operating in the Subthreshold/Weak Inversion Regions" (2012). Theses and Dissertations. 2934. https://scholarsarchive.byu.edu/etd/2934 This Thesis is brought to you for free and open access by BYU ScholarsArchive. It has been accepted for inclusion in Theses and Dissertations by an authorized administrator of BYU ScholarsArchive. For more information, please contact [email protected], [email protected]. A Design Basis for Composite Cascode Stages Operating in the Subthreshold/Weak Inversion Regions Taylor M. Waddel A thesis submitted to the faculty of Brigham Young University in partial fulfillment of the requirements for the degree of Master of Science David J. Comer, Chair Aaron R. Hawkins Richard H. Selfridge Department of Electrical and Computer Engineering Brigham Young University April 2012 Copyright © 2012 Taylor M. Waddel All Rights Reserved ABSTRACT A Design Basis for Composite Cascode Stages Operating in the Subthreshold/Weak Inversion Regions Taylor M. Waddel Department of Electrical and Computer Engineering, BYU Master of Science Composite cascode stages have been used in operational amplifier designs to achieve ultra- high gain at very low power. The flexibility and simplicity of the stage makes it an appealing choice for low power op-amp designs. Op-amp design using the composite cascode stage is often made more difficult through the lack of a design process. -
Miller Effect Cascode BJT Amplifier
ESE319 Introduction to Microelectronics Miller Effect Cascode BJT Amplifier 2008 Kenneth R. Laker,update 18Oct10 KRL 1 ESE319 Introduction to Microelectronics Prototype Common Emitter Circuit Ignore “low frequency” High frequency model capacitors 2008 Kenneth R. Laker,update 18Oct10 KRL 2 ESE319 Introduction to Microelectronics Multisim Simulation Mid-band gain ∣Av∣=g m RC=40mS ∗5.1k =20446.2 dB Half-gain point 2008 Kenneth R. Laker,update 18Oct10 KRL 3 ESE319 Introduction to Microelectronics Introducing the Miller Effect The feedback connection of C between base and collector causes it to appear to the amplifier like a large capacitor 1 − K C has been inserted between the base and emitter terminals. This phenomenon is called the “Miller effect” and the capacitive multiplier “1 – K ” acting on C equals the common emitter amplifier mid-band gain, i.e. K = − g m R C . NOTE: Common base and common collector amplifiers do not suffer from the Miller effect, since in these amplifiers, one side of C is connected directly to ground. 2008 Kenneth R. Laker,update 18Oct10 KRL 4 ESE319 Introduction to Microelectronics High Frequency CC and CB Models B C E ground B v-pi C B v-pi C E E C Common Collector Common Base C is in parallel with R . C is in parallel with R . B C 2008 Kenneth R. Laker,update 18Oct10 KRL 5 ESE319 Introduction to Microelectronics Miller's Theorem I Z −I I 1=I I 2=−I + + + + V 1 K V 1 V 2 V 1 Z Z V 2=K V 1 <=> 1 2 - - - - V 1 V 1 Z V 1−V 2 V 1−K V 1 V 1 Z I = = = => 1= = = Z Z Z I 1 I 1−K 1−K 1 Z 1= 1 j 2 f C 1−K V 2− V 2 V 2−V 2 K V 2 −I = = = V 2 V 2 Z Z Z Z Z = = = ≈ Z => 2 I −I 1 if K >> 1 1 2 1− 1− K K approx. -
A.F. Amplification with the Cascode
A.F. Amplification with the Cascode AN OUTLINE OF THE ADVANTAGES OF THE TWIN-TRIODE OVER THE PENTODE FOR A.F. By G. A. STEVENS R OR to the development of Band television Hence the circuit has the same gain as a pentode with the I III tuners the cascode was very little u5ed, its main same gm as the lower valve. use being in low noise r.f. stages, and it was used Also, since for any valve that has an impedance RA in asP a voltage amplifier in a stabilised power supply, where its cathode, its anode impedance is increased by a factor: high gain was required. + gm The properties that enhance its use for r.f. amplifica We can write (for1 the cascode:-RK)· tion also indicate its suitability as an a.f. voltage amplifier. ra=ra2(I+gm2 ral) (2) These advantages are as follows :- since the anode impedance of VI is in series with the l. High gain. cathode of V2. Therefore, from equations (1) and (2) 2. Low noise. we can derive:- 3. Low inter-electrode capacitances (particularly be gm g 1 2 tween input and output). ft= ra = ra2 . ml ( + gm ral) (3) From equation (2) it can be seen that for a twin triode 4. Capability of being designed with low phase shift (in feedback amplifiers). The characteristics of the cascode that give rise to the -----�------------Vs above advantages are best illustrated by a simplified analysis of the circuit (a fuller analysis will be found in the " Radio Designers' Handbook" by Langford-Smith, Ch. -
Dv/Dt-Control Methods for the Sic JFET/ Si MOSFET Cascode
Dv/dt-control methods for the SiC JFET/ Si MOSFET cascode . Daniel Aggeler, Member, IEEE, Francisco Canales, Member, IEEE, Juergen Biela, Member, IEEE, and Johann W. Kolar, Senior Member, IEEE „This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of ETH Zürich’s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promo- tional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document you agree to all provisions of the copyright laws protecting it.” 4074 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 28, NO. 8, AUGUST 2013 Dv/Dt-Control Methods for the SiC JFET/Si MOSFET Cascode Daniel Aggeler, Member, IEEE, Francisco Canales, Member, IEEE, Juergen Biela, Member, IEEE, and Johann W. Kolar, Fellow, IEEE Abstract—Switching devices based on SiC offer outstanding per- formance with respect to operating frequency, junction tempera- ture, and conduction losses enabling significant improvement of the performance of converter systems. There, the cascode consist- ing of a MOSFET and a JFET has additionally the advantage of being a normally off device and offering a simple control via the gate of the MOSFET. Without dv/dt-control, however, the tran- sients for hard commutation reach values of up to 45kV/μs, which could lead to electromagnetic interference problems. Especially in drive systems, problems could occur, which are related to earth currents (bearing currents) due to parasitic capacitances. -
Chapter 5: BJT AC Analysis Two-Port Systems Approach
Chapter 5: BJT AC Analysis Two-Port Systems Approach This approach: • Reduces a circuit to a two-port system • Provides a “Thévenin look” at the output terminals • Makes it easier to determine the effects of a changing load With Vi set to 0 V: ZTh Zo Ro The voltage across the open terminals is: ETh AvNLVi where AvNL is the no-load voltage gain. Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc. Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved. Effect of Load Impedance on Gain This model can be applied to any current- or voltage- controlled amplifier. Adding a load reduces the gain of the amplifier: Vo RL A v A vNL Vi RL Ro Zi Ai A v R L Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc. Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved. Effect of Source Impedance on Gain The fraction of applied signal that reaches the input of the amplifier is: R i Vs Vi R i Rs The internal resistance of the signal source reduces the overall gain: Vo Ri A vs A vNL Vs Ri Rs Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc. Robert L. Boylestad and Louis Nashelsky Upper Saddle River, New Jersey 07458 • All rights reserved. Combined Effects of RS and RL on Voltage Gain Effects of RL: Vo RLA vNL A v Vi RL Ro Ri Ai A v RL Effects of RL and RS: Vo Ri RL A vs A vNL Vs Ri Rs RL Ro Rs Ri Ais A vs RL Electronic Devices and Circuit Theory, 10/e Copyright ©2009 by Pearson Education, Inc. -
33-Ghz Monolithic Cascode Alinas/Gainas Heterojunction Bipolar Transistor Feedback Amplifier
1378 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 26, NO. 10, OCTOBER 1991 ductance FETs (NOTFET),” in IEEE Indium Phosphide and Re- amplifiers up to 60 GHz,” in IEEE Microwave and Millimeter-Wuue lated Materials Conf. Dig., 1990, p. 24. Monolithic Circuits Symp. Dig., 1990, pp. 23-26. [5] R. Majidi-Ahy et al., “5.100 GHz InP CPW MMIC 7-section [IO] R. Majidi-Ahy et al., “100 GHz active electronic probe for on-wafer distributed amplifier,” in IEEE Microwarv and Millimeter-War’e S-parameter measurements,” Electron. Lett., vol. 25, no. 13, pp. Monolithic Circuits Symp. Dig., 1990, pp. 31-34. 828-830, 1989. [6] R. Majidi-Ahy et al., “94 GHz InP MMIC five-section distributed [Ill R. Majidi-Ahy et al., “100 GHz high-gain InP MMIC cascode amplifier,” Electron. Lett., vol. 26, no. 2, pp. 91-92, Jan. 1990. amplifier,” in IEEE Gds IC Symp. Proc., 1990, pp. 173-176. [7] N. Camilleri et al., “A W-band monolithic amplifier,’’ in IEEE Int. [12] Y. C. Pao et al., “Impact of surface layer on InAlAs/InGaAs/InP Microwave Symp. Dig., 1990, pp. 903-906. high electron mobility transistors,” IEEE Electron Device Lett., vol. [8] K. H. G. Duh et al., “W-band InGaAs HEMT low noise amplifiers,” 11, no. 7, pp. 312-314, 1990. in IEEE Int. Microwai,e Symp. Dig.,1990, pp. 595-598. [13] L. E. Dickens et al., “A GaAs wideband cascode MMIC amplifier,” [9] C. Yuen et al., “High-gain, low-noise monolithic HEMT distributed in IEEE GdsIC Symp. Proc., 1983, pp.