Microprocessors We Saw in 1996

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Microprocessors We Saw in 1996 Integrated Circuit Engineering Corporation MICRMICROPROPROCESSORSOCESSORS Deservedly still the technology leader category we believe (although the Siemens’ 64Mb DRAM may make this too close to call). Again this year this product category provided not only the most complex metal interconnect technology (Motorola), but also the shortest gates (Motorola)! So, Motorola appears to definitely be “in the game” and gets our vote for “most improved” technology this year. Intel’s Pentium Pro and IBM PC601+ seem to be “mature” technologies at this point. The UltraSparc from SUN included here has a somewhat unfair disadvantage, it is about a year older technology, (since we seem to be unable to obtain any late model devices). Hewlett Packard also remains shrouded in mystery (shyness?). Now, if all these manufacturers could only catch DEC Alpha’s speed! 5-1 HORIZONTAL DIMENSIONS (DESIGN RULES) MOTOROLA DEC INTEL IBM SUN CPUs MPC 604e Alpha 21164 Pentium Pro 6X86 Ultra Sparc 64 Bit RISC 64 Bit RISC 64 Bit CISC 32 Bit CISC 64 Bit RISC 1996 1996 1996 1996 9528 ❶ Die size 11.7 x 12.9mm 16.8 x 18.6mm 14 x 14mm 13.3 x 14.6mm 17.7 x 17.8mm (148mm2) (313mm2) (196mm2) (194mm2) (315mm2) Min. M6 width/space 3.0µm/2.0µm NA NA 1.7µm/1.4µm NA Min. M5 width/space 1.0µm/0.7µm NA NA 0.75µm/0.8µm NA Min. M4 width/space 1.1µm/0.65µm 3.4µm/2.6µm 2.0µm/2.0µm 0.65µm/0.8µm 2.0µm/1.8µm Min. M3 width/space 1.0µm/0.75µm 2.2µm/2.6µm 0.6µm/0.55µm 0.6µm/0.9µm 0.8µm/0.9µm Min. M2 width/space 0.8µm/0.5µm 1.2µm/0.8µm 0.6µm/0.55µm 0.55µm/0.7µm 0.8µm/0.9µm ❷ Min. M1 width/space 0.55µm/0.75µm 1.2µm/0.8µm 0.55µm/0.4µm 0.7µm/NA 0.8µm/0.9µm + + + + + Min. via (Met. to Met) 0.55µm 0.5µm 0.5µm 0.65µm 0.7µm µ + µ + µ + µ + µ + Min contact (Met. to Si) 0.55 m 0.6 m 0.55 m 0.7 m 0.7 m Integrated CircuitEngineeringCorporation Min. Poly 0.25µm* 0.35µm 0.3µm* 0.35µm* 0.45µm* Min. gate-(N)† 0.25µm 0.4µm 0.3µm 0.35µm 0.45µm Min. gate-(P)† 0.25µm 0.45µm 0.3µm 0.35µm 0.45µm Cache Cell 36µm2 43µm2 49µm2 44µm2 64µm2 ❶ ❷ * Polycide † Physical gate length + Plugs Active area See text Table 5-1 VERTICAL DIMENSIONS MOTOROLA DEC INTEL IBM SUN CPUs MPC 604e Alpha 21164 Pentium Pro 6X86 Ultra Sparc 64 Bit RISC 64 Bit RISC 64 Bit CISC 32 Bit CISC 64 Bit RISC 1996 1996 1996 1996 9528 Final passivation 1.0µm 0.7µm 0.7µm 1.0µm 2.0µm Metal 6 1.8µm NA NA NA NA Metal 5 0.7µm NA NA 0.9µm NA Metal 4 0.7µm 1.6µm 1.9µm 0.85µm 1.3µm Metal 3 0.65µm 1.6µm 0.85µm 0.8µm 0.8µm Metal 2 0.7µm 0.9µm 0.8µm 0.65µm 0.8µm Metal 1 0.8µm 0.9µm 0.6µm 0.65µm 0.8µm Pre-metal dielectric 0.7µm 1.2µm 0.45µm 0.75µm❸ 0.6µm Poly 0.2µm* 0.3µm* 0.35µm* 0.15µm* 0.25µm* Integrated CircuitEngineeringCorporation Recessed oxide 0.55µm❷ 0.4µm❷ 0.4µm❷ 0.4µm❷ 0.55µm N-well 1µm ?❶ 1µm 1µm 2µm P-well ?❶ ?❶ ?❶ ?❶ ?❶ Epi 2.5µm (P) 2.5µm (P) 2µm (P) 2µm (P) 6µm (P) ❶ ❷ ❸ * Polycide Could not delineate Shallow trench See text Table 5-2 DIE MATERIALS MOTOROLA DEC INTEL IBM SUN CPUs MPC 604e Alpha 21164 Pentium Pro 6X86 Ultra Sparc 64 Bit RISC 64 Bit RISC 64 Bit CISC 32 Bit CISC 64 Bit RISC 1996 1996 1996 1996 9528 Final passivation Nitride on glass glass Nitride Nitride on glass Nitride on glass Metal 6 Aluminum NA NA Titanium-Nitride NA Aluminum Titanium Metal 5 Titanium-Nitride NA NA Same as Metal 6 NA Aluminum Titanium-Nitride Titanium Metal 4 Same as Metal 5 Titanium-Nitride Titanium-Nitride Same as Metal 6 Titanium-Nitride Aluminum Aluminum Aluminum Titanium-Nitride Titanium Titanium-Nitride Metal 3 Same as Metal 5 Same as Metal 4 Same as Metal 4 Same as Metal 6 Same as Metal 4 Metal 2 Same as Metal 5 Same as Metal 4 Same as Metal 4 Same as Metal 6 Same as Metal 4 Integrated CircuitEngineeringCorporation Metal 1 Tungsten Same as Metal 4 Same as Metal 4 Tungsten❶ Same as Metal 4 Via (metal to metal) Tungsten+ Tungsten+ Tungsten+ Tungsten+ Tungsten+ Contact (metal to silicon) Tungsten+ Tungsten+ Tungsten+ Tungsten+ Tungsten+ Intermetal dielectric glass glass w SOG glass glass glass w SOG Pre-metal dielectric glass/nitride Layered glass glass glass/nitride glass Polycide*/salicide† metal titanium*† cobalt*† titanium*† titanium*† titanium*† + Plugs ❶ See text Table 5-3 Motorola Power PC604e Integrated Circuit Engineering Corporation TECHNOLOGY DESCRIPTION MOTOROLA MPC604e 64-BIT RISC MICROPROCESSOR Introduction Ref. report SCA 9607-486 The part was packaged in a 256-pin (255 actual) ceramic ball grid array package. A date code was not identifiable but the devices were undoubtedly fabbed in 1996. The device has on-chip 32Kbyte instruction and data cache memory arrays, a 64-bit external data bus, 32-bit address bus, and runs at 166MHz. See tables for specific dimensions and materials identification and see figures for examples of physical structures. Important/Unique Features – The most advanced microprocessor technology seen in 1996! – Very aggressive feature size (0.25 micron gates). – Six metal process (five aluminum, one tungsten). – High degree of planarization (CMP). – Shallow trench isolation. – “C4” flip-chip design with solder bumps. Quality Quality of the process implementation was very good and we found no areas of concern. In the area of layer patterning, etch definition and control were both good. Alignment and registration were also good. 5-2 Motorola Power PC604e Integrated Circuit Engineering Corporation Technology The device was manufactured by a shallow trench oxide isolation twin (multiple)-well CMOS process in a P-epi on a P substrate. It is the first example we’ve seen of an IBM style process fabbed by Motorola. Final passivation consisted of a layer of nitride over a layer of silicon dioxide. This device incorporated six levels of metal. Metals 2 - 6 were defined by dry-etch techniques (no damascene) and consisted of aluminum with titanium-nitride caps and barriers on thin tita- nium adhesion layers, except for metal 6 which had no cap or barrier. Metal 1 consisted of tungsten and was defined using a damascene process. It was used for local interconnect. Metal 6 used standard vias to connect to metal 5. Tungsten plugs (some elongated) were used for vertical interconnects between metals 2 - 5, and were stacked where needed. Planarization of the interlevel dielectric 5 (between M5 and M6) consisted of a layer of deposit- ed glass (possibly TEOS) which was subjected to an etchback, then followed by a thin layer of deposited glass (no SOG). Interlevel dielectrics 2 - 4 each consisted of a layer of deposited glass followed by a thick layer of glass that was planarized by CMP, and another layer of glass that was planarized by the CMP process that leveled the tungsten plugs. Interlevel dielectric 1 consisted of a thick layer of glass which was also planarized by the tungsten plug leveling CMP. Planarization of the “pre-metal” dielectric (which in this process surrounds metal 1) was done using a thick layer of silicon-dioxide (subjected to CMP) followed by a thin layer of silicon- dioxide. Again here also the thin layer was planarized as part of the tungsten planarizing CMP. A thin nitride “sealing layer” was present under the “pre-metal” covering all active areas. No evidence of any spin-on-glass (SOG) was found anywhere. A single layer of titanium-silicided polysilicon (polycide) was used for all gates on the die. Sidewall spacers were of nitride, providing both the spacing for the LDD requirements as well as separation between gate edges and the metallized (salicide process) source/drain diffusions. The same material (titanium) was used at sources/drains as for siliciding the polysilicon. Buried contacts were not used, the metal 1 tungsten being used for connecting poly to diffusions. No evidence of unusual gate oxides was found, but shallow trench oxide isolation was employed and well implemented. 5-3 Motorola Power PC604e Integrated Circuit Engineering Corporation Redundancy fuses made with metal 5 were present, but no blown links were found. Passivation and oxide cutouts were present over the fuses. Cache memory cells consisted of a six transistor CMOS SRAM cell design. Metal 3 formed the bit lines (via metals 1 and 2). Metal 2 formed “piggyback” word lines and distributed Vcc and GND (via metal 1). This SRAM had a 36 microns2 cell size, the smallest seen on any micro- processor this year. Overall minimum feature size measured anywhere on this die was the 0.25 micron polycide (gates). This represents the smallest feature size found on any microprocessor product in 1996! Packaging/Assembly As mentioned, the part was packaged in a 256-pin (255 actual) ceramic ball grid array package. No decoupling capacitors were present outside or inside the package. The die was mounted using a flip-chip design (“C4”) incorporating solder bumps. A thin protective coating (under- fill) was present between the ceramic substrate and the die surface. A spun-on patterned, poly- imide die coat covered the active die surface, but was not present over the test array along the edge of the die.
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