TRANSMISSIONS Electrical and Computer Engineering | Missouri S&T | Spring 2018
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INDUSTRIAL STRENGTH by MICHAEL RIORDAN
THE INDUSTRIAL STRENGTH by MICHAEL RIORDAN ORE THAN A DECADE before J. J. Thomson discovered the elec- tron, Thomas Edison stumbled across a curious effect, patented Mit, and quickly forgot about it. Testing various carbon filaments for electric light bulbs in 1883, he noticed a tiny current trickling in a single di- rection across a partially evacuated tube into which he had inserted a metal plate. Two decades later, British entrepreneur John Ambrose Fleming applied this effect to invent the “oscillation valve,” or vacuum diode—a two-termi- nal device that converts alternating current into direct. In the early 1900s such rectifiers served as critical elements in radio receivers, converting radio waves into the direct current signals needed to drive earphones. In 1906 the American inventor Lee de Forest happened to insert another elec- trode into one of these valves. To his delight, he discovered he could influ- ence the current flowing through this contraption by changing the voltage on this third electrode. The first vacuum-tube amplifier, it served initially as an improved rectifier. De Forest promptly dubbed his triode the audion and ap- plied for a patent. Much of the rest of his life would be spent in forming a se- ries of shaky companies to exploit this invention—and in an endless series of legal disputes over the rights to its use. These pioneers of electronics understood only vaguely—if at all—that individual subatomic particles were streaming through their devices. For them, electricity was still the fluid (or fluids) that the classical electrodynamicists of the nineteenth century thought to be related to stresses and disturbances in the luminiferous æther. -
Transistor Und IC Historisch Betrachtet
HALBLEITER-HISTORIE Sowohl der Transistor als auch das IC wurden jeweils zweimal parallel „erfunden“ Transistor und IC historisch betrachtet Der Tag, an dem James Watt im Jahre 1769 zum ersten Mal eine Urform seiner Dampfmaschine präsentier- te, gilt unter Historikern als der Beginn des Industriezeitalters. Der 23.12.1947 markiert den Beginn des In- formations-Zeitalters, denn an diesem Tag wurde der Transistor „geboren“. elektronik industrie hat tief in den Archiven recherchiert und erläutert die wesentlichen Meilensteine auf dem Weg zum Transistor so- wie weiter bis zum IC von heute. Übrigens: Fast hätte der erste Transistor in Europa (und nicht in den USA) Signale verstärkt. Die „Erfinder“ des Transistors (Bild 1), John Bardeen und Walter Houser Brattain so- wie William Bradford Shockley haben hart gearbeitet und großartiges geleis- tet. Völlig zu Recht erhielten sie am 10.12.1956 dafür den Nobelpreis für Phy- sik, aber die Grundlagen für die „Erfin- Bell-Labs/Alcatel-Lucent Quelle: dung“ des Transistors legten Forscher in Europa. Außerdem wurde der Transistor nicht erfunden, sondern zielgerichtet im Team entwickelt – und zwar eingebettet in ein finanzkräftiges Gerüst. Der Transis- tor war somit auch das erste Ergebnis der industrialisierten Wissenschaft, des „Sys- tems Engineering“, so dass Walter Brat- tain anlässlich der Verleihung des Nobel- preises 1956 die Auswirkungen dieser neuen Forschungsstrategie auch sehr deutlich kommentierte: „Man muss Bild 1: Die Erfinder/Entwickler des Transistors: Die Erfinder des Transistors: John -
10.8 Books MH
Vol 442|10 August 2006 BOOKS & ARTS YALE JOEL/TIME LIFE PICTURES/GETTY LIFE JOEL/TIME YALE Shock result? William Shockley (centre) shared the 1956 physics Nobel with John Bardeen (left) and Walter Brattain for their work on transistors. The Moses of Silicon Valley William Shockley’s work led to the foundation of the US computer industry. Broken Genius: The Rise and Fall of William In the aptly titled biography Broken Genius, now, it was unusual for a newly minted PhD to Shockley, Creator of the Electronic Age Joel Shurkin reveals Shockley to be a fascina- go to an industrial laboratory. It was perhaps by Joel N. Shurkin ting example of an aristotelian tragic hero an indication that Shockley wanted his life to Macmillan Science: 2006. 400 pp. £19.99, whose flaw is readily discernible in the first have some practical impact. Besides, it was the $27.95 act. In Shockley’s case, this flaw was his over- middle of the Great Depression, and Shockley riding confidence in his own intelligence. now had a wife and family to support. Paul Grant Shockley was an only child, born in 1910 in Kelly saw that the electromechanical relays William Shockley was arguably the most enig- London to a gun-slinging mother and an MIT- that pervaded central telephone switchgear matic, provocative and controversial twentieth- educated father, a mining engineer whose at the time would not be able to handle the century US physicist. His notoriety derived search for gainful employment caused the ever-increasing traffic load. He asked his Bell both from his perceived indirect role in the family incessant relocation. -
Histoire De L'invention Du Transitor
0:00:00-0:03:07 History of the invension of the transistor Quentin Rafhay Based on the book: Crystal Fire 0:03:07-0:07:14 Everything starts with… Mervin Kelly Vaccum tube 0:07:14-0:08:20 Computer was like that… 0:08:20-0:10:14 Kelly hires Mervin Kelly William Shockley 0:10:14-0:11:25 Shockley hires (circa 1936) Walter Brattain Experimentalist 0:11:25-0:13:30 Sold state devices at that time Cat whisker (moustache de chat) Diode… They start working 0:13:30-0:17:37 Electrons and Holes in Semiconductors with Applications to Transistor Electronics by William Shockley (1950) … but they have to stop 0:17:37-0:18:34 0:18:34-0:19:22 After the war, Shockley hires John Bardeen Theorician 0:19:22-0:25:21 Bardeen first contribution Electrons and Holes in Semiconductors with Applications to Transistor Electronics by William Shockley (1950) 0:25:21-0:28:28 Changing the approach Injecting minority carriers ‘‘‘‘Electron’’’’ ‘‘‘‘Trou’’’’ 0:28:28-0:30:28 Changing the approach Injecting minority carriers Why electron do not recombine immediatly 0:30:28-0:32:11 Changing the approach Injecting minority carriers Electron wave function in quantum coherence Increase lifetime of minority carriers 0:32:11-0:33:58 Changing the approach Injecting minority carriers Theoretical calculation by Bardeen on the minimum length which could influence a current 0:33:58-0:37:27 On the 23rd of december, 1947 Invention the Point Contact transistor 0:37:27-0:38:38 Shockley’s answer Invent bipolar transistor, paper and pen… 0:38:38-0:41:22 The aftermath • Industrial development -
Transistorized!, the One Hour Documentary Airing on PBS, Tells the Compelling Story of the History of the Transistor and the Scientists Who Discovered It
About the PBS Documentary The transistor is one of the 20th century’s most important inventions. It revolutionized technology and launched the Information Age. Its creation is a dramatic story of top secret research, serendipitous accidents, collaborative genius and clashing egos. Transistorized!, the one hour documentary airing on PBS, tells the compelling story of the history of the transistor and the scientists who discovered it. They include William Shockley, who assembled the team at Bell Labs that built the first working transistors, but whose driving ego ultimately ended their collaboration; John Bardeen, a theoretical genius whose profound insights paved the way to the final discovery; and Walter Brattain, whose persistent tinkering led to the breakthrough that resulted in the first transistor. Host Ira Flatow leads us through a vivid and Host Ira Flatow takes viewers entertaining tour of the key moments in the history back in time to recapture the of the transistor — from the scientific excitement and drama breakthroughs early in the 20th century that behind the invention that set the stage for the invention, through the changed the world – the Transistorized! transistor — in the PBS frustrations and serendipitous accidents that program “Transistorized!” will be broadcast made the first transistor work, to the evolution of the first transistorized products nationally on PBS and the birth of Silicon Valley. All inextricably interwoven with the tale of the brilliant Monday, November 8, collaboration and dramatic demise of the team that made the transistor possible. 1999 at 10pm ET. (Check local listings for the broadcast To learn more about the transistor visit www.pbs.org/transistor. -
Innovation Is in Ourdna Letter from Our Contents Page 12 Our Editor Features
Magazine for the Science & Technology Innovation Center in Middletown, NJ • Premier Edition Honoring the Past, Creating the Future Innovation is in ourDNA Letter from Our Contents page 12 our Editor Features 2 The History of AT&T 94 Data Transmssion — Fax Welcome to our Science & Technology Innovation Center of Middletown, New Jersey magazine premier edition. The new Innovation Center is a place 12 The Transistor 100 Cellular Phones of inspiration and learning from the history of AT&T and significant inventions that our company has created over the past 142+ years that contribute to 13 Bell Solar Cell 104 Project AirGig™ the advancement of humanity. Over my years at AT&T, I have spoken to many The Telstar Project Our Contributors people who never knew that AT&T had a history of innovation in so many 16 109 areas beyond the creation of the telephone by Alexander Graham Bell. Coax Cable 24 Throughout the years, AT&T has been a key player in local and long-distance 30 Fiber Optics in the AT&T Network voice telephony, motion pictures, computers, the cable industry, wireless, and Science & Technology broadband. AT&T has served the nation’s telecommunication needs and par- 34 Vitaphone and Western Electric ticipated in many technology partnerships in every industry throughout the globe. The breadth of technology and innovation goes on and on, but a 44 Picturephone Irwin Gerszberg few of the innovations you might see at our new Innovation Center include: Innovation ground-to-air radio telephony, motion picture sound, the Telstar satellite, Theseus Honoring the Past, Creating the Future AVP Advanced Technology Research 48 telephone switching, the facsimile machine, military radar systems, the AT&T Science & Technology transistor, undersea cable, fiber communications, Picturephone via T1’s, coin 50 A Short History of UNIX™ EDITOR-IN-CHIEF Innovation Center phones, touch-tone dialing, AMPS cellular phones, UNIX™ and C language Irwin Gerszberg programming. -
CSET Policy Brief
July 2021 The Huawei Moment CSET Policy Brief AUTHORS Alex Rubin Alan Omar Loera Martinez Jake Dow Anna Puglisi Executive Summary 5G hardware will become the backbone of the United States’, and most of the world’s, telecommunications infrastructure. As such, it is a foundational element of U.S. national security. Despite the U.S. lead in telecommunications throughout the twentieth century, it now finds itself at the precipice of deploying a new generation of technology for its critical communications foundation without a U.S. company capable of providing a secure end to end solution. The United States is forced to choose whether to accept the economic costs of delaying deployment of a new generation of communications technology or instead run the security risks of choosing the market leader, Chinese firm Huawei.1 How did Washington, at the beginning of the twenty-first century, not take action to prevent a geopolitical competitor from taking leadership in telecommunications, a key piece of national security relevant critical infrastructure? Strategic investments and support by the U.S. government facilitated U.S. telecommunications equipment firms, AT&T prime among them, to lead the field and develop world-changing technological innovations that spurred the creation of new sectors.2 However, over time, U.S. firms lost their market leader positions. The exact causes have been debated, but contributing factors are generally thought to include antitrust pressures from the U.S. Department of Justice to break apart a regulated monopoly, along with fundamental changes in how U.S. corporations operate. The bigger problem is that the U.S. -
Defining New Frontiers in Electronic Devices with High K Dielectrics And
Defining New Frontiers in Electronic Devices with high k dielectrics and interfacial engineering Minghwei HONG 洪銘輝 Dept. of Materials Science and Eng., National Tsing Hua University, Hsinchu, Taiwan z The quest for the III-V and Ge MOSFET z Nano single crystal oxide on semiconductor – the structural pppperfection and applications for devices There's Plenty of Room at the Bottom An Invitation to Enter a New Field of Physics by Richard P. Feynman Where is the bottom ? I can’t see. Hay, there is plenty of room at the bottom. C. P. Lee, NCTU It’s interesting but useless. Don’ t worry, let me build something from the bottom up so that you can see. C. P. Lee, NCTU I think it’ll be better by doing it from the top down Stop ! It’s going to land iinn water.water. C. P. Lee, NCTU General observation • You lead, follow, or get out of the way – Lee Iococa of Chrysler • Three types of researchers – Leading – Following very closely – Wondering and not knowing what to do •Eithe r sc ie n tifica lly v er y in ter estin g or technologically very useful. The best is to have both and the worst is to have neither. motivation •Rappgid shrinkage of transistor size in Si industr y – devices of gate length of 65 nm in production, of 50 nm or smaller in R&D, with channel length ~ 15 nm by 2010, and SiO2 thickness to quantum tunneling limit of 1.0nm • Called for replacing SiO2 with high k dielectrics – equivalent oxide thickness (EOT) as thin as 1.0 nm or less • Coulomb scattering from charge trapping and phonon issue related to high k gate dielectrics leading to degraded channel mobility – higher mobility materials such as strained Si, Si-Ge alloys, Ge, and IIIV’s • Ge offers two times higher mobility for electrons and four times higher for holes comparing with Si – renewing interest in Ge-based devices. -
MERVIN JOE KELLY February 14, 1894-March 18, 1971
NATIONAL ACADEMY OF SCIENCES M E R V I N J O E K ELLY 1894—1971 A Biographical Memoir by J O H N R . P IERCE Any opinions expressed in this memoir are those of the author(s) and do not necessarily reflect the views of the National Academy of Sciences. Biographical Memoir COPYRIGHT 1975 NATIONAL ACADEMY OF SCIENCES WASHINGTON D.C. MERVIN JOE KELLY February 14, 1894-March 18, 1971 BY JOHN R. PIERCE N PREPARING this memoir of a remarkable man, I now regret I that I did not have a closer association with him. During his life, I regarded Mervin Kelly as an almost supernatural force. While I saw him many times in the course of my work at Bell Laboratories, usually with others, and a few times in his home, I did not seek him out for fear of being struck by lightning. Thus I have had to rely on other sources for some aspects of his life and personality. In quoting directly from such sources, I have in some cases eliminated passages or inserted explanatory material in brackets; I have not otherwise altered the writer's text. In trying to organize the material in a sensible way, I have put Kelly's character and work first; then his ideas concerning research and technology; and following these, a brief biographi- cal sketch; a list of honors, awards, and memberships; and a bibliography. THE MAN AND HIS WORKS Mervin Kelly had great intelligence and great force. His work with R. A. Millikan at the University of Chicago gave him a lasting appreciation of the rarity and importance of first-rate scientists and first-rate research. -
Walter Houser Brattain
NATIONAL ACADEMY OF SCIENCES WALTER HOUSER BRATTAIN 1902—1987 A Biographical Memoir by JOHN BARDEEN Any opinions expressed in this memoir are those of the author(s) and do not necessarily reflect the views of the National Academy of Sciences. Biographical Memoir COPYRIGHT 1994 NATIONAL ACADEMY OF SCIENCES WASHINGTON D.C. WALTER HOUSER BRATTAIN February 10, 1902-October 13, 1987 BY JOHN BARDEEN OST NOTED AS A coinventor of the transistor, Walter H. MBrattain, an experimental physicist, spent the bulk of his professional career at the Bell Telephone Laboratories, first on West Street in New York City and later in Murray Hill, New Jersey. For the discovery of the transistor effect, he shared the 1956 Nobel Prize for physics with William B. Shockley and me. His main interests focused on the elec- trical properties of surfaces and interfaces, first on thermi- onic cathodes for applications to vacuum tubes and later on semiconductors for applications to diodes and transis- tors. Toward the end of his career, he became interested in biophysical problems in which electrolytic conduction plays an important role. Brattain was an initial member of the Bell Solid State Department, formed at the end of World War II to exploit the understanding of properties of solids made possible by quantum theory. For some years before his retirement from Bell, Brattain taught on a part-time basis at his alma mater, Whitman College, and returned there to teach following his retire- ment. His research at Whitman was mainly on flow of ions through lipid bilayers in collaborations at Whitman and Battelle Northwest Laboratories. -
On the Trail of the Transistor
book reviews On the trail of the transistor Crystal Fire: The Birth of the Information Age by Michael Riordan and Lillian Hoddeson Norton: 1997. Pp. 352. $27.50 Frederick Seitz For a quarter of a century, Lillian Hoddeson, CORBIS-BETTMANN/UPI a physicist, has collected background mater- ial on the history of solid-state physics, both basic and applied, carrying out taped inter- views with many of the most creatively active scientists, and studying the available litera- ture, including archival files. One of the many by-products of this endeavour has been the multi-authored book Out of the Crystal Maze (Oxford University Press, 1992), of which Hoddeson was co-editor and leading catalyst. Early in this decade, and in recognition of the fact that 1997 would be the fiftieth anniver- sary of the invention of the transistor, she joined with Michael Riordan, another physi- cist with a comparable interest in science his- tory, to produce this lively account of the invention, with much emphasis on events that John Bardeen, William Shockley and Walter Brattain (left to right) at Bell Telephone Laboratories in preceded and followed it. The background, 1948. The picture appears in The Invention that Changed the World: The Story of Radar from War to personalities and actions of the principal Peace by Robert Buderi, reviewed by Frederick Seitz in Nature 384, 424 (1996) and now published in actors are given ample coverage. the United Kingdom by Little, Brown at £20. Mervin Kelly, who became head of the Bell Telephone Laboratories in 1936 and thoroughly understood semiconductors had understand the factors that had caused remained its leader for more than 20 years, become available for exploratory research. -
Walter Houser Brattain B
Brattain et.al. Bipolar TransistorInvention -1- This chapter is a reprint of the internet address: http://www.geocities.com/bioelectrochemistry/brattain.htm (Spring 2002) Walter Houser Brattain b. Feb. 10, 1902, Amoy, China d. Oct. 13, 1987, Seattle, Wash., U.S. American scientist who, along with John Bardeen and William B. Shockley, won the Nobel Prize for Physics in 1956 for his investigation of the properties of semiconductors-materials of which transistors are made--and for the development of the transistor. The transistor replaced the bulkier vacuum tube for many uses and was the forerunner of microminiature electronic parts. His father, Ross, and mother, Ottilie, married just after they'd graduated from Whitman College in Walla Walla, Washington. Ross got a job teaching science and math in China, and Walter Houser Brattain was born on February 10, 1902 in Amoy. They didn't stay abroad long: by 1903, the Brattains were back in Washington. Walter spent most of his youth on a large cattle ranch just south of the Canadian border. When he wasn't doing school work, Walter had little time for anything besides helping out on the ranch. He was a cowboy. In the fall of 1920, Brattain entered Whitman College and received a B.S. degree there in 1924. He claimed he majored in physics and math because they were the only subjects he was good at. Brattain attended college at a turning point in American science, when physics was being transformed. Older students would have been expected to travel to Europe for a first- class physics education, but Brattain was in the first wave of those who could do just as well in the US.