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The Effects of Piezoelectric Ceramic Dissipation Factor on the Performance of Ultrasonic Transducers

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The Effects of Piezoelectric Ceramic Dissipation Factor on the Performance of Ultrasonic Transducers The Effects of Piezoelectric Ceramic Dissipation Factor on the Performance of Ultrasonic Transducers Dominick A. DeAngelis and Gary W. Schulze 7 Dies Transducer Tool Device Forming Gas Wand for Cu Ball Bonded Stacked Die Device (SEM) Wire Bonding in Action with Fine Copper Wire (20 Wires/Sec) COPPER OR GOLD WIRE Kulicke & Soffa’s Flagship Capillary Semiconductor Tool Wire Bonding Machine Ultrasonic Transducer Used For Wire Bonding Machine Primary steps of the Wire Bond Cycle 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -1- OUTLINE Specific Application and Definition of Dissipation Factor ( DF ) How Does DF Affect Transducer Performance? Ball After EFO Research Summary Equivalent Circuit Model for DF Measuring DF Model Parameters Measuring Porosity of Piezo Ceramics Mixing Rules for Piezo Properties FEA Modeling and Experimental Results Conclusions Questions? 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -2- SPECIFIC TRANSDUCER APPLICATION K&S is the leading MFG of semiconductor wire bonding equipment Transducer delivers energy to a capillary tool for welding tiny wires Patented single piece “Unibody” design is ideal for research studies Portability across 100’s of machines required for same customer device Piezo Stack Transducer Transducer Specs Body On IConn Machine 500 mA Max Current 50/120 kHz Operating Modes Transducer 80 Ohm Max Impedance 1¢ US Operation 40 Bonds/Sec Capillary Device Bond Duration ~10 mSec PZT8 Ceramics (4X) New IConn Capillary Transducer Tool EFO (Spark) Diced Parts (thk=1mm) 1¢ US Typical Capillary Tool with Wire PZT8 Piezoelectric Ceramics Actual Wire Bonds From Compared to Sewing Needle Multi-Tier Package 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -3- DEFINITION OF DISSIPATION FACTOR ( DF) Ratio of Equivalent Series Resistance ( ESR ) and the magnitude of capacitance reactance ( Xc), i.e., DF = ESR /| Xc| Also known as loss tangent or tan (δ), where angle δ is deviation from 90°between voltage and current for an ideal capacit or (i.e., no losses) Ratio of (energy lost)/(energy stored) or Re /| Im | of the impedance Typically measured at 120 Hz (for AC) and 1000 Hz (more common) The higher the DF the more heat is generated via I2ESR heating Series Model Complex Impedance ( Z) Plane (Voltage /Current ) Parallel Model Imaginary Z(ω) =Re( ω) + Im ( ω ) j = ESR R s ( j) ESR Real For Constant C and ESR , DF Cideal C Rp p Increases Linearly with 1 Frequency ω C X = Z c ωC R 1 δ Re (Z ) 1 ESR = p C= C 1 + tan ()δ=ESR ω C == DF = +ω 2 2 2 p ω 2 2 2 − −Im ()Z Q 1 Cp R p Cp R p jX c 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -4- HOW DOES DF AFFECT TRANSDUCERS? DF is an important material property of the piezo ceramics It governs the amount of self-heating under resonant conditions It quantifies a particular material type for either an actuator or resonator High DF materials with higher output ( d33 ) are better for actuators Low DF materials with typically lower d33 are better for resonators Designers must often compromise between mechanical output and DF in the selection of piezo ceramics for power ultrasonic applications Abnormally high DF is one of the main causes of production stoppages of power transducers used in wirebonding Abnormally high DF is typically caused by moisture absorption due to poor piezo ceramic porosity (manufacturing issue) MFG’s often use heat drying after aqueous degreasing to remove polling oil: this can mask DF issues in final inspection before shipping Moisture absorption can cause voltage leakage effects; e.g., first seen in production when setting piezo stack preload via charge amp Corresponding large increases in capacitance can also be associated with poor porosity, which is counterintuitive unless there is moisture absorption or electrodes are wicking/penetrating 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -5- RESEARCH SUMMARY Investigated the mechanisms for abnormally high DF in piezo ceramics, and its corresponding effect on transducer performance Investigated if DF is only affected by the bulk dielectric properties of the piezo ceramics (e.g. porosity and moisture), or also influenced by non- uniform electric field effects such as from electrode wicking Explored if higher DF ceramics can affect transducer current/voltage to displacement gain stability via moisture expulsion at higher drive levels Investigation focused solely on the common PZT8 piezoelectric material used with welding transducers for semiconductor wire bonding Transducers were built with both normal DF piezo ceramics, and those with abnormally high DF ceramics which caused production stoppages Several metrics were investigated such as impedance, capacitance, displacement/current gain and displacement/voltage gain The experimental and theoretical research methods included Bode plots, equivalent circuits, scanning laser vibrometry and coupled-field finite element analysis 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -6- EQUIVALENT CIRCUIT MODEL FOR DF C: Nominal Capacitance Rs: Series Resistance Rp: Parallel Resistance C0: Dielectric Absorption R0: Dielectric Loss ω: Frequency RDC = Rs + Rp ω120 = 2π(120) ω1k = 2π(1000) DF 120 = DF at 120 Hz C120 = Capacitance at 120 Hz DF 1k = DF at 1000 Hz C1k = Capacitance at 1000 Hz 1 ()ω = + Equivalent Impedance ( ZEQ ) of Circuit ZCRCRREQ,, p ,0 , 0 , s R s 111++ + 1 + 1 − j R j RjR10 100 j p R − 0 − 0 − ωC 0 ω ω ω C0 10 C 0 100 C 0 Equations for Solve Block (Mathcad) to Determine Unknowns from Equivalent Circuit = ω ω DF120Re( ZEQ( 120 ,,,,, CRCRR p 00 s )) 120120 C Relation for Dissipation Factor at 120 Hz = ω ω DF1kRe( Z EQk( 1 ,,,,, CRCRR p 00 skk)) 11 C Relation for Dissipation Factor 1000 Hz −1 = Im()Z()ω ,,,,, CRCRR ω EQ120 p 00 s Relation for Capacitance at 120 Hz 120C 120 −1 = Im()Z()ω ,,,,, CRCRR Relation for Capacitance at 1000 Hz ω EQk1 p 0 0 s 1kC 1 k = + Series and Parallel (Leakage) Resistance at DC RDC R s R p 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -7- MEASURING DF MODEL PARAMETERS LCR meter used to measure capacitance and dissipation factor at 120 Hz & 1000 Hz (BK 878). Tiny probes avoids inductance errors Multi Meter w/ Probe Piezo Conductance (G) LCR Meter Tweezers Range 100000 Megohms G=1/R 1¢ US Parallel resistance Rp is very high, but can ionize with moisture to cause shorts at DC. Used conductance measurement ( 1/R) with Fluke 187 Conductance is affected by moisture expulsion due to current heating from multimeter, and typically decreases rapidly for times longer than RC time constant. This is not an accurate method for measuring RDC Conductivity of moisture is not a major factor for dissipation factor with respect to leakage across electrodes, but rather affects internal operation of capacitor to store charge due to local ionization with AC Typical measurements for excellent, good and bad piezo ceramics Type DF 120 C120 (pF) DF 1k C1k (pF) G (nS) Excellent .001 268 .001 268 0 Good .001 283 .004 282 0 Bad .073 269 .034 252 Varies 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -8- MEASURING DF MODEL CON’T Parallel or leakage resistance ( Rp) reduces when taking transducer based measurements for DF with many piezo ceramics are in parallel =1 = 1 + + + + Req R p Piezo Piezo Piezo 1 1 1 1 Rp Piezo Rp Rp Rp + + + 4 −−− −−− −−− −−− Rp R p R p R p Parallel leakage resistance (Rp) also decreases in similar fashion when several conductive percolation paths (in red ) appear due to moisture =1 = Req 2 R 1+ 1 4R 4 R When using piezo ceramics to set preload, RC time constant ( τ) for charge amp needs to be greater than ~30 sec in practice for accuracy τ 30 R≥ = =Ω15 M p + + µ C0 Ca 1550 pF 2 F Percolated conduction paths due to moisture can cause rapid decay or excessive preload due to charge leakage via Rp (production stoppage) 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -9- DF CIRCUIT MODEL EXAMPLES DF model predictions based on individual piezo ceramic measurements Type DF 120 C120 (pF) DF 1k C1k (pF) C (pF) Rp (M Ω) C0 (pF) R0 (M Ω) Rs (M Ω) Good .001 283 .004 282 281 2e12 2 64 0 Bad .073 269 .034 252 248 131 22 33 6637 DF Vs Frequency (Good Part) DF Vs Frequency (Bad Part) 0.005 0.08 Bad Part has More: 0.004 0.07 Leakage, Dielectric Absorption (Moisture), and Series Resistance 0.003 0.06 DF DF 0.002 0.05 0.001 0.04 0 0.03 0 200 400 600 800 1000 0 100 200 300 400 500 600 700 800 900 1000 Frequency (Hz) Frequency (Hz) Capacitance Vs Frequency (Good Part) Capacitance Vs Frequency (Bad Part) 270 283.5 283.25 265 283 260 282.75 282.5 Capacitance(pF) Capacitance(pF) 255 282.25 250 282 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 Frequency (Hz) Frequency (Hz) 41 th UIA Symposium, San Francisco, CA, USA 18-Apr-12 -10- DF CIRCUIT MODEL EXAMPLES DF Model predictions based on transducer assembly measurements Type DF 120 C120 (pF) DF 1k C1k (pF) C (pF) Rp (M Ω) C0 (pF) R0 (M Ω) Rs (M Ω) Good .001 1564 .004 1557 1551 16470822 12 16 16 Bad .023 1558 .011 1530 1524 100 45 23 548 DF Vs Frequency (Good Transducer) DF Vs Frequency (Bad Transducer) 0.0045 0.024 0.00406 0.0222 Bad Transducer has More: Leakage, Dielectric 0.00363 0.0205 Absorption (Moisture), Dielectric Loss and Series 0.00319 0.0188 Resistance 0.00275 DF 0.017 DF 0.00231 0.0153 0.00188 0.0135 0.00144 0.0117 0.001 0.01 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 Frequency (Hz) Frequency (Hz) Frequency (Hz) Frequency (Hz) Capacitance Vs Freqeuncy (Good Transducer) Capacitance Vs Freqeuncy (Bad
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