Complete Circuit Designer's Notebook
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The Damped Harmonic Oscillator
THE DAMPED HARMONIC OSCILLATOR Reading: Main 3.1, 3.2, 3.3 Taylor 5.4 Giancoli 14.7, 14.8 Free, undamped oscillators – other examples k m L No friction I C k m q 1 x m!x! = !kx q!! = ! q LC ! ! r; r L = θ Common notation for all g !! 2 T ! " # ! !!! + " ! = 0 m L 0 mg k friction m 1 LI! + q + RI = 0 x C 1 Lq!!+ q + Rq! = 0 C m!x! = !kx ! bx! ! r L = cm θ Common notation for all g !! ! 2 T ! " # ! # b'! !!! + 2"!! +# ! = 0 m L 0 mg Natural motion of damped harmonic oscillator Force = mx˙˙ restoring force + resistive force = mx˙˙ ! !kx ! k Need a model for this. m Try restoring force proportional to velocity k m x !bx! How do we choose a model? Physically reasonable, mathematically tractable … Validation comes IF it describes the experimental system accurately Natural motion of damped harmonic oscillator Force = mx˙˙ restoring force + resistive force = mx˙˙ !kx ! bx! = m!x! ! Divide by coefficient of d2x/dt2 ! and rearrange: x 2 x 2 x 0 !!+ ! ! + " 0 = inverse time β and ω0 (rate or frequency) are generic to any oscillating system This is the notation of TM; Main uses γ = 2β. Natural motion of damped harmonic oscillator 2 x˙˙ + 2"x˙ +#0 x = 0 Try x(t) = Ce pt C, p are unknown constants ! x˙ (t) = px(t), x˙˙ (t) = p2 x(t) p2 2 p 2 x(t) 0 Substitute: ( + ! + " 0 ) = ! 2 2 Now p is known (and p = !" ± " ! # 0 there are 2 p values) p t p t x(t) = Ce + + C'e " Must be sure to make x real! ! Natural motion of damped HO Can identify 3 cases " < #0 underdamped ! " > #0 overdamped ! " = #0 critically damped time ---> ! underdamped " < #0 # 2 !1 = ! 0 1" 2 ! 0 ! time ---> 2 2 p = !" ± " ! # 0 = !" ± i#1 x(t) = Ce"#t+i$1t +C*e"#t"i$1t Keep x(t) real "#t x(t) = Ae [cos($1t +%)] complex <-> amp/phase System oscillates at "frequency" ω1 (very close to ω0) ! - but in fact there is not only one single frequency associated with the motion as we will see. -
Basic PCB Material Electrical and Thermal Properties for Design Introduction
1 Basic PCB material electrical and thermal properties for design Introduction: In order to design PCBs intelligently it becomes important to understand, among other things, the electrical properties of the board material. This brief paper is an attempt to outline these key properties and offer some descriptions of these parameters. Parameters: The basic ( and almost indispensable) parameters for PCB materials are listed below and further described in the treatment that follows. dk, laminate dielectric constant df, dissipation factor Dielectric loss Conductor loss Thermal effects Frequency performance dk: Use the design dk value which is assumed to be more pertinent to design. Determines such things as impedances and the physical dimensions of microstrip circuits. A reasonable accurate practical formula for the effective dielectric constant derived from the dielectric constant of the material is: -1/2 εeff = [ ( εr +1)/2] + [ ( εr -1)/2][1+ (12.h/W)] Here h = thickness of PCB material W = width of the trace εeff = effective dielectric constant εr = dielectric constant of pcb material df: The dissipation factor (df) is a measure of loss-rate of energy of a mode of oscillation in a dissipative system. It is the reciprocal of quality factor Q, which represents the Signal Processing Group Inc., technical memorandum. Website: http://www.signalpro.biz. Signal Processing Gtroup Inc., designs, develops and manufactures analog and wireless ASICs and modules using state of the art semiconductor, PCB and packaging technologies. For a free no obligation quote on your product please send your requirements to us via email at [email protected] or through the Contact item on the website. -
Uprating of Electrolytic Capacitors
White Paper Uprating of Electrolytic Capacitors By Joelle Arnold Uprating of Electrolytic Capacitors Aluminum electrolytic capacitors are comprised of two aluminum foils, a cathode and an anode, rolled together with an electrolyte-soaked paper spacer in between. An oxide film is grown on the anode to create the dielectric. Aluminum electrolytic capacitors are primarily used to filter low-frequency electrical signals, primarily in power designs. The critical functional parameters for aluminum electrolytic capacitors are defined as capacitance (C), leakage current (LC), equivalent series resistance (ESR), impedance (Z), and dissipation factor (DF). These five parameters are interrelated through the following schematic. Physically, leakage current (LC) tends to be primarily driven by the behavior of the dielectric. ESR is primarily driven by the behavior of the electrolyte. Physically, impedance (Z) is a summation of all the resistances throughout the capacitor, including resistances due to packaging. Electrically, Z is the summation of ESR and either the capacitive reactance (XC), at low frequency, or the inductance (LESL), at high frequency (see Figure 1). Dissipation factor is the ratio of ESR over XC. Therefore, a low ESR tends to give a low impedance and a low dissipation factor. 1.1 Functional Parameters (Specified in Datasheet) The functional parameters that can be provided in manufacturers’ datasheets are listed below 1.1.1 Capacitance vs. Temperature It can be seen that the manufacturer’s guarantee of ±20% stability of the capacitance is only relevant at room temperature. While a source of potential concern when operating aluminum electrolytic capacitors over an extended temperature range, previous research has demonstrated that the capacitance of this capacitor is extremely stable as a function of temperature (see Figure 2 and Figure 4). -
Equivalent Series Resistance (ESR) of Capacitors
Application Note 1 of 5 Equivalent Series Resistance (ESR) of Capacitors Questions continually arise concerning the correct definition of the ESR (Equivalent Series Resistance) of a capacitor and, more particularly, the difference between ESR and the actual physical series resistance (which we'll call Ras), the ohmic resistance of the leads and plates or foils. The definition and application of the term ESR has often been misconstrued. We hope this note will answer any questions and clarify any confusion that might exist. Very briefly, ESR is a measure of the total lossiness of a capacitor. It is larger than Ras because the actual series resistance is only one source of the total loss (usually a small part). The Series Equivalent Circuit At one frequency, a measurement of complex impedance gives two numbers, the real part and the imaginary part: Z = Rs + jXs. At that frequency, the impedance behaves like a series combination of an ideal resistance Rs and an ideal reactance Xs (Figure 1). Rs RS XS CS Figure 1: Equivalent series circuit representation If Xs is negative, the impedance is capacitive, and the general reactance can be replaced with a capacitance of: −1 Cs = ωXs We now have an equivalent circuit that is correct only at the measurement frequency. The resistance of this equivalent circuit is the equivalent series resistance ESR = Rs = Real part of Z © IET LABS, Inc., September 2019 Printed in U.S.A 035002 Rev. A4 1 of 5 Application Note 2 of 5 Add the dissipation FACTOR energy lost Real part of Z If we define the dissipation factor D as D = = energy stored (− Imaginary part of Z) Rs Then D = =Rsω C = (ESR) ω C (− )Xs If one took a pure resistance and a pure capacitance and connected them in series, then one could say that the ESR of the combination was indeed equal to the actual series resistance. -
Agilent Basics of Measuring the Dielectric Properties of Materials
Agilent Basics of Measuring the Dielectric Properties of Materials Application Note Contents Introduction ..............................................................................................3 Dielectric theory .....................................................................................4 Dielectric Constant............................................................................4 Permeability........................................................................................7 Electromagnetic propagation .................................................................8 Dielectric mechanisms ........................................................................10 Orientation (dipolar) polarization ................................................11 Electronic and atomic polarization ..............................................11 Relaxation time ................................................................................12 Debye Relation .................................................................................12 Cole-Cole diagram............................................................................13 Ionic conductivity ............................................................................13 Interfacial or space charge polarization..................................... 14 Measurement Systems .........................................................................15 Network analyzers ..........................................................................15 Impedance analyzers and LCR meters.........................................16 -
Microphonics & Lorentz Detuning: Determined by Cavity/Cryomodule Design and Background Environment
Old Dominion University October 2012 2 2 2 f opt (b 1) fo IRQQ(/) where b oocos V Phase Amplitude Controller Controller Klystron 1.0 Limiter 0.9 0.8 Loop 0.7 Phase Amplitude 0.6 CEBAF 6 GeV Set Point 0.5 Amplitude CEBAF Upgrade Detector 0.4 Cavity 0.3 0.2 Energy Content (Normalized)Content Energy 0.1 Reference Phase 0.0 Phase -1,000 -800 -600 -400 -200 0 200 Set Point Detector Detuning (Hz) • RF Systems • What are you controlling? • Cavity Equations • Control Systems Cavity Models • Algorithms Generator Driven Resonator (GDR) Self Excited Loop (SEL) • Hardware Receiver ADC/Jitter Transmitter Digital Signal Processing • Cavity Tuning & Resonance Control Stepper Motor Piezo • RF Systems are broken RF Control Power down into two parts. Electronics Amplifier • The high power section consisting of the power amplifier and the high power transmission line Waveguide/ (waveguide or coax) Coax • The Low power (level) section (LLRF) consisting of the field and resonance control components Cavity • Think your grandfathers “Hi-Fi” stereo or your guitar amp. • Intensity modulation of DC beam by control grid • Efficiency ~ 50-70% (dependent on operation Triode Tetrode mode) • Gain 10-20 dB • Frequency dc – 500 MHz • Power to 1 MW • Velocity modulation with input Cavity • Drift space and several cavities to achieve bunching • It is highly efficient DC to RF Conversion (50%+) • High gain >50 dB • CW klystrons typically have a modulating anode for - Gain control - RF drive power in saturation • Power: CW 1 MW, Pulsed 5 MW • Frequencies 300 MHz to 10 GHz+ A. Nassiri CW SCRF workshop 2012 • Intensity modulation of DC beam by control grid • It is highly efficient DC to RF Conversion approaching 70% • Unfortunately low gain 22 dB (max) • Power: CW to 80 kW • Frequencies 300 MHz to 1.5 GHz As a tetrode As a klystron A. -
The Q of Oscillators
The Q of oscillators References: L.R. Fortney – Principles of Electronics: Analog and Digital, Harcourt Brace Jovanovich 1987, Chapter 2 (AC Circuits) H. J. Pain – The Physics of Vibrations and Waves, 5th edition, Wiley 1999, Chapter 3 (The forced oscillator). Prerequisite: Currents through inductances, capacitances and resistances – 2nd year lab experiment, Department of Physics, University of Toronto, http://www.physics.utoronto.ca/~phy225h/currents-l-r-c/currents-l-c-r.pdf Introduction In the Prerequisite experiment, you studied LCR circuits with different applied signals. A loop with capacitance and inductance exhibits an oscillatory response to a disturbance, due to the oscillating energy exchange between the electric and magnetic fields of the circuit elements. If a resistor is added, the oscillation will become damped. 1 In this experiment, the LCR circuit will be driven at resonance frequencyωr = , when the LC transfer of energy between the driving source and the circuit will be a maximum. LCR circuits at resonance. The transfer function. Ohm’s Law applied to a LCR loop (Figure 1) can be written in complex notation (see Appendix from the Prerequisite) Figure 1 LCR circuit for resonance studies v( jω) Ohm’s Law: i( jω) = (1) Z - 1 - i(jω) and v(jω) are complex instantaneous values of current and voltage, ω is the angular frequency (ω = 2πf ) , Z is the complex impedance of the loop: 1 Z = R + jωL − (2) ωC j = −1 is the complex number The voltage across the resistor from Figure 1, as a result of current i can be expressed as: vR ( jω) = Ri( jω) (3) Eliminating i(jω) from Equations (1) and (3) results into: R v ( jω) = v( jω) (4) R R + j(ωL −1/ωC) Equation (4) can be put into the general form: vR ( jω) = H ( jω)v( jω) (5) where H(jω) is called a transfer function across the resistor, in the frequency domain. -
Arxiv:1704.05328V1 [Cond-Mat.Mes-Hall] 18 Apr 2017 Tuning the Mechanical Mode Frequencies by More Than Silicon Wafers
Quantitative Determination of the Mechanical Properties of Nanomembrane Resonators by Vibrometry In Continuous Light Fan Yang,∗ Reimar Waitz,y and Elke Scheer Department of Physics, Universit¨atKonstanz, 78464 Konstanz, Germany We present an experimental study of the bending waves of freestanding Si3N4 nanomembranes using optical profilometry in varying environments such as pressure and temperature. We introduce a method, named Vibrometry in Continuous Light (VICL) that enables us to disentangle the response of the membrane from the one of the excitation system, thereby giving access to the eigenfrequency and the quality (Q) factor of the membrane by fitting a model of a damped driven harmonic oscillator to the experimental data. The validity of particular assumptions or aspects of the model such as damping mechanisms, can be tested by imposing additional constraints on the fitting procedure. We verify the performance of the method by studying two modes of a 478 nm thick Si3N4 freestanding membrane and find Q factors of 2 × 104 for both modes at room temperature. Finally, we observe a linear increase of the resonance frequency of the ground mode with temperature which amounts to 550 Hz=◦C for a ground mode frequency of 0:447 MHz. This makes the nanomembrane resonators suitable as high-sensitive temperature sensors. I. INTRODUCTION frequencies of bending waves of nanomembranes may range from a few kHz to several 100 MHz [6], those of Nanomechanical membranes are extensively used in a thickness oscillation may even exceed 100 GHz [21], re- variety of applications including among others high fre- quiring a versatile excitation and detection method able quency microwave devices [1], human motion detectors to operate in this wide frequency range and to resolve [2], and gas sensors [3]. -
Application Note: ESR Losses in Ceramic Capacitors by Richard Fiore, Director of RF Applications Engineering American Technical Ceramics
Application Note: ESR Losses In Ceramic Capacitors by Richard Fiore, Director of RF Applications Engineering American Technical Ceramics AMERICAN TECHNICAL CERAMICS ATC North America ATC Europe ATC Asia [email protected] [email protected] [email protected] www.atceramics.com ATC 001-923 Rev. D; 4/07 ESR LOSSES IN CERAMIC CAPACITORS In the world of RF ceramic chip capacitors, Equivalent Series Resistance (ESR) is often considered to be the single most important parameter in selecting the product to fit the application. ESR, typically expressed in milliohms, is the summation of all losses resulting from dielectric (Rsd) and metal elements (Rsm) of the capacitor, (ESR = Rsd+Rsm). Assessing how these losses affect circuit performance is essential when utilizing ceramic capacitors in virtually all RF designs. Advantage of Low Loss RF Capacitors Ceramics capacitors utilized in MRI imaging coils must exhibit Selecting low loss (ultra low ESR) chip capacitors is an important ultra low loss. These capacitors are used in conjunction with an consideration for virtually all RF circuit designs. Some examples of MRI coil in a tuned circuit configuration. Since the signals being the advantages are listed below for several application types. detected by an MRI scanner are extremely small, the losses of the Extended battery life is possible when using low loss capacitors in coil circuit must be kept very low, usually in the order of a few applications such as source bypassing and drain coupling in the milliohms. Excessive ESR losses will degrade the resolution of the final power amplifier stage of a handheld portable transmitter image unless steps are taken to reduce these losses. -
Dielectric Loss
Dielectric Loss - εr is static dielectric constant (result of polarization under dc conditions). Under ac conditions, the dielectric constant is different from the above as energy losses have to be taken into account. - Thermal agitation tries to randomize the dipole orientations. Hence dipole moments cannot react instantaneously to changes in the applied field Æ losses. - The absorption of electrical energy by a dielectric material that is subjected to an alternating electric field is termed dielectric loss. - In general, the dielectric constant εr is a complex number given by where, εr’ is the real part and εr’’ is the imaginary part. Dept of ECE, National University of Singapore Chunxiang Zhu Dielectric Loss - Consider parallel plate capacitor with lossy dielectric - Impedance of the circuit - Thus, admittance (Y=1/Z) given by Dept of ECE, National University of Singapore Chunxiang Zhu Dielectric Loss - The admittance can be written in the form The admittance of the dielectric medium is equivalent to a parallel combination of - Note: compared to parallel an ideal lossless capacitor C’ with a resistance formula. relative permittivity εr’ and a resistance of 1/Gp or conductance Gp. Dept of ECE, National University of Singapore Chunxiang Zhu Dielectric Loss - Input power: - Real part εr’ represents the relative permittivity (static dielectric contribution) in capacitance calculation; imaginary part εr’’ represents the energy loss in dielectric medium. - Loss tangent: defined as represents how lossy the material is for ac signals. Dept of ECE, National University of Singapore Chunxiang Zhu Dielectric Loss The dielectric loss per unit volume: Dept of ECE, National University of Singapore Chunxiang Zhu Dielectric Loss - Note that the power loss is a function of ω, E and tanδ. -
RF-MEMS Load Sensors with Enhanced Q-Factor and Sensitivity In
Microelectronic Engineering 88 (2011) 247–253 Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: www.elsevier.com/locate/mee RF-MEMS load sensors with enhanced Q-factor and sensitivity in a suspended architecture ⇑ Rohat Melik a, Emre Unal a, Nihan Kosku Perkgoz a, Christian Puttlitz b, Hilmi Volkan Demir a, a Departments of Electrical Engineering and Physics, Nanotechnology Research Center, and Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey b Department of Mechanical Engineering, Orthopaedic Bioengineering Research Laboratory, Colorado State University, Fort Collins, CO 80523, USA article info abstract Article history: In this paper, we present and demonstrate RF-MEMS load sensors designed and fabricated in a suspended Received 31 August 2009 architecture that increases their quality-factor (Q-factor), accompanied with an increased resonance fre- Received in revised form 7 July 2010 quency shift under load. The suspended architecture is obtained by removing silicon under the sensor. Accepted 29 October 2010 We compare two sensors that consist of 195 lm  195 lm resonators, where all of the resonator features Available online 9 November 2010 are of equal dimensions, but one’s substrate is partially removed (suspended architecture) and the other’s is not (planar architecture). The single suspended device has a resonance of 15.18 GHz with 102.06 Q-fac- Keywords: tor whereas the single planar device has the resonance at 15.01 GHz and an associated Q-factor of 93.81. Fabrication For the single planar device, we measured a resonance frequency shift of 430 MHz with 3920 N of applied IC Resonance frequency shift load, while we achieved a 780 MHz frequency shift in the single suspended device. -
A Comprehensive Guide to Selecting the Right Capacitor for Your Specific Application
CAPACITOR FUNDAMENTALS EBOOK A Comprehensive Guide to Selecting the Right Capacitor for Your Specific Application 2777 Hwy 20 (315) 655-8710 [email protected] Cazenovia, NY 13035 knowlescapacitors.com CAPACITOR FUNDAMENTALS EBOOK TABLE OF CONTENTS Introduction .................................. 2 The Key Principles of Capacitance and How a Basic Capacitor Works .............................. 3 How Capacitors are Most Frequently Used in Electronic Circuits ............................. 6 Factors Affecting Capacitance .................. 9 Defining Dielectric Polarization .................. 11 Dielectric Properties ........................... 15 Characteristics of Ferroelectric Ceramics ......................... 19 Characteristics of Linear Dielectrics .............. 22 Dielectric Classification ......................... 24 Test Parameters and Electrical Properties .......... 27 Industry Test Standards Overview. 32 High Reliability Testing .......................... 34 Visual Standards For Chip Capacitors ............. 37 Chip Attachment and Termination Guidelines ...... 42 Dissipation Factor and Capacitive Reactance ..... 49 Selecting the Right Capacitor for Your Specific Application Needs ............................ 51 1 CAPACITOR FUNDAMENTALS EBOOK INTRODUCTION At Knowles Precision Devices, our expertise in capacitor technology helps developers working on some of the world’s most demanding applications across the medical device, military and aerospace, telecommunications, and automotive industries. Thus, we brought together our top engineers