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T Echnical B Riefs Technical Briefs APRIL 2020 VOL. 27, NO. 2 ISSN: 1074 1879 EDITOR-IN-CHIEF: DANIEL TOMASZEWSKI TABLE OF CONTENTS T ECHNICAL B RIEFS TECHNICAL BRIEFS . .1 • Marvels of Microelectronic Technology: From the Floating Gate and Charge Trapping concepts to the Flash Memory of Terabit class MARVELS OF MICROELECTRONIC UPCOMING TECHNICAL MEETINGS . 10 ECHNOLOGY FROM THE LOATING • 2020 IEEE Photovoltaic Specialists Conference (PVSC) T : F • 2020 IEEE International Interconnect Technology Conference (IITC) GATE AND CHARGE TRAPPING • 2020 IEEE Symposia on VLSI Technology and Circuits (VLSI) CONCEPTS TO THE FLASH MEMORY SOCIETY NEWS . .14 OF TERABIT CLASS • Message from Editor-in-Chief • Message from EDS Vice President of Regions BY SIMON DELEONIBUS, PAST CHIEF SCIENTIST CEA, LETI and Chapters • Announcement of Newly Elected Officers • In Memory of Harvey C. Nathanson Introduction Awards and Call for Nominations . 19 • Meyya Meyyappan wins Technology Champion Award In this Technical Brief, we are focusing on the discovery, inventions • 2020 IEEE Robert Bosch Award Winner Announcement and development of modern Non Volatile Memories (NVMs). Where- • IEEE Robert Bosch Award Call for Nominations • 2019 EDS Distinguished Service Award Winner as, we reported on the invention and development of Dynamic Ran- • 2019 EDS J. J. Ebers Award Winner(s) dom-Access Memory (DRAM) in the October 2019 Newsletter issue. • EDS J. J. Ebers Award Call for Nominations • 2019 EDS Education Award Winner Since the years 1990s to 2000s, NVMs, in their Flash Floating Gate • 2020 EDS Education Award Call for Nominations and Charge Trap (FFG&CT) versions, have become the market and • 2019 EDS Early Career Award Winners • EDS Early Career Award Call for Nominations technology driver for integrated circuits as they entered the mass • EDS Members Elected to IEEE Grade of Fellow market through the camera, automotive and, further on, commu- • Announcement of Newly Elected EDS Senior Members • Heterogeneous Integration Roadmap (HIR) nication markets. Who among us has not used a USB key, a Solid Event Resounding Success State Disk (SSD), stored data on a mobile phone, or used a digi- YOUNG PROFESSIONALS . .30 tal camera? No one can ignore today the formidable expansion of • IEEE Young Professionals Spain presents “IEEE FFG&CT NVMs and the way they overcame the leadership on DRAM Inspiring Leaders” Event • IEEE Young Professionals Germany Social Meeting and Logic circuits as technology driver for Nanoelectronics. NVMs in Stuttgart have gone through the highest number of conceptual and architec- CHAPTER NEWS . .33 tural changes in the past 50 years, evolving at the same time, from • COVID-19, How a Virus Affects the Science Community a niche product to a mass production driver. Just to give an exam- • Region 8 IEEE EDS Distinguished Lecture Reports • Region 10 IEEE EDS Distinguished Lecture Reports ple, Multi-Deca Gigabit (several tens of Gbit) USB keys, based on FFG&CT organized in a NAND architecture, are given almost for free REGIONAL NEWS . .38 nowadays as a storage and code share vector. Whereas, 256k NOR EDS VISION, MISSION AND FIELD OF Erasable Programmable Read-Only Memory (EPROM), which were INTEREST STATEMENTS . .48 necessarily erased by using a UV lamp, were used for professional applications, essentially for storing microcontroller programs in the 1980s! Many hurdles have appeared in their 2-dimensional (2D) scal- ing, and today 3-dimensional (3D) multilevel cells (up to 4bits/cell) integration can increase the bit density without requesting conven- tional device scaling. The NAND FFG&CT memories have reached the Terabit integration level, using either an intermediate floating gate or pseudo floating gate charge trapping. Their market ex- ceeded $52B in 2018, which is unprecedented. They are on the way (continued on page 3) ELECTRON DEVICES NEWSLETTER SOCIETY EDITORIAL STAFF President Vice President of Membership Editor-In-Chief Meyya Meyyappan and Services Daniel Tomaszewski NASA Ames Research Center Patrick Fay Institute of Electron Technology E-mail: [email protected] University of Notre Dame Email: [email protected] E-mail: [email protected] President-Elect Ravi Todi Vice President of Publications Western Digital Technologies and Products REGIONS 1–6, 7 & 9 United Kingdom, Middle Email: [email protected] Joachim Burghartz Institute for Microelectronics Eastern, Northeastern & East & Africa Treasurer Stuttgart Southeastern USA Jonathan Terry Bin Zhao E-mail: [email protected] (Regions 1, 2 & 3) The University of Edinburgh Freescale Semiconductor Rinus Lee E-mail: [email protected] E-mail: [email protected] Vice President of Regions/ GlobalFoundries Chapters E-mail: [email protected] Western Europe Secretary Murty Polavarapu Mike Schwarz M.K. Radhakrishnan Space Electronics Solutions Robert Bosch GmbH NanoRel E-mail: [email protected] Central USA & Canada E-mail: [email protected] (Regions 4 & 7) E-mail: mike.schwarz1980@ Vice President of Strategic Michael Adachi googlemail.com Jr. Past President Directions Simon Fraser University Fernando Guarin Paul Berger E-mail: [email protected] REGION 10 GlobalFoundries The Ohio State University Australia, New Zealand & E-mail: [email protected] E-mail: [email protected] Southwestern & Western USA South East Asia (Regions 5 & 6) Sr. Past President Vice President of Technical P Susthitha Menon Samar Saha Committees Editor Vacancy Universiti Kebangsaan Malaysia Prospicient Devices John Dallessase E-mail: [email protected] E-mail: [email protected] University of Illinois at Urbana- Latin America (Region 9) Champaign Edmundo A. Guiterrez-D. North East and East Asia Vice President of Education Email: [email protected] INAOE Ming Liu Navakanta Bhat E-mail: [email protected] Institute of Microelectronics Indian Institute of Science E-mail: [email protected] Email: [email protected] REGION 8 Vice President of Meetings Eastern Europe South Asia Kazunari Ishimaru Kateryna Arkhypova Manoj Saxena Kioxia Corporation IRE NASU University of Delhi Email: [email protected] E-mail: [email protected] E-mail: [email protected] Scandinavia & Central Europe IEEE prohibits discrimination, harassment, and bullying. For more information, Marcin Janicki visit http://www.ieee.org/web/aboutus/whatis/policies/p9-26.html. Lodz University of Technology E-mail: [email protected] EDS Board of Governors (BoG) CONTRIBUTIONS WELCOME Elected Members-at-Large Elected for a three-year term (maximum two terms) with ‘full’ voting privileges Readers are encouraged to submit news items concerning the Society and its members. Please send your ideas/articles directly to either Editor-in 2020 TERM 2021 TERM 2022 TERM Chief or the Regional Editor for your region. The e-mail addresses of all Roger Booth (1) Paul Berger (1) Constantin Bulucea (1) Regional Editors are listed on this page. E-mail is the preferred form of Mukta Farooq (2) Navakanta Bhat (2) Daniel Camacho (1) submission. Edmundo (1) Merlyne De Souza (1) John Dallesasse (1) NEWSLETTER DEADLINES A. Gutierrez-D. Benjamin Iniquez (1) Kazumari Ishimaru (1) Mario Lanza (1) ISSUE DUE DATE Carmen M. Lilley (2) William (Bill) Nehrer (1) Geok Ing Ng (1) Durga Misra (2) Murty Polavarapu (2) Claudio Paoloni (1) Manoj Saxena (1) Camilo Velez Cuervo (1) Hitoshi Wakabayashi (1) July April 1st Sumant Sood (1) October July 1st January October 1st April January 1st The EDS Newsletter archive can be found on the Society web site at http://eds.ieee.org/eds-newsletters.html. The archive contains issues from July 1994 to the present. IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and Electronics Engineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016–5997. Printed in the U.S.A. One dollar ($1.00) per member per year is included in the Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Send address changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08854. Copyright © 2020 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies are not used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy. 2 IEEE Electron Devices Society Newsletter ❍ April 2020 MARVELS OF MICROELECTRONIC TECHNOLOGY: FROM THE FLOATING GATE AND CHARGE TRAPPING CONCEPTS TO THE FLASH MEMORY OF TERABIT CLASS (continued from page 1) to replacing hard disk drives (HDDs) in computers and equipping data centers with Solid State Disks (SSDs). Two major key persons that marked the history of Non Volatile Memories research and development, Professor Simon M. Sze, NCTU, IEEE Fellow, IEEE EDS Celebrated member (Figure 1a) and Professor Fujio Ma- suoka, Tohoku University, IEEE Fellow (Figure 1b), have kindly accepted to testify on the birth of the discovery of the floating gate effect and the inven- tion of Flash Memories, respectively. Their testimonies are reported in sec- tions 1 and 2. In section 4, members of the former team at Toshiba Memory (spun into Kioxia) who invented and first announced the 3D BICS-FLASHTM Figure 1 Recent portraits of: (a) Simon M. Sze (by courtesy of Simon Sze) architecture graciously accepted to (b) Fujio Masuoka (by courtesy of Fujio Masuoka) share their recollection. Memory (FGM) effect [2]. The device Electrically Erasable Programmable 1. Simon Sze and the early cradle featured a
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