10 FLASH TECHNOLOGY Overview Flash memory technology is a mix of EPROM and EEPROM technologies. The term “flash” was chosen because a large chunk of memory could be erased at one time. The name, therefore, distinguishes flash devices from EEPROMs, where each byte is erased individually. Flash memory technology is today a mature technology. Flash memory is a strong com- petitor to other memories such as EPROMs, EEPROMs, and to some DRAM applications. Figure 10-1 shows the density comparison of a flash versus other memories. 64M 16M 4M DRAM/EPROM 1M SRAM/EEPROM Density 256K Flash 64K 1980 1982 1984 1986 1988 1990 1992 1994 1996 Year Source: Intel/ICE, "Memory 1996" 18613A Figure 10-1. Flash Density Versus Other Memory How the Device Works The elementary flash cell consists of one transistor with a floating gate, similar to an EPROM cell. However, technology and geometry differences between flash devices and EPROMs exist. In particular, the gate oxide between the silicon and the floating gate is thinner for flash technology. It is similar to the tunnel oxide of an EEPROM. Source and INTEGRATED CIRCUIT ENGINEERING CORPORATION 10-1 Flash Technology drain diffusions are also different. Figure 10-2 shows a comparison between a flash cell and an EPROM cell with the same technology complexity. Due to thinner gate oxide, the flash device will be more difficult to process. CMOS Flash Cell CMOS EPROM Cell Mag. 10,000x Mag. 10,000x Flash Memory Cell – Larger transistor – Thinner floating gate – Thinner oxide (100-200Å) Photos by ICE 17561A Figure 10-2.
International Journal Of Engineering Research and Technology (IJERT) IFET-2014 Conference Proceedings INTERFACE ECE T14 INTRACT – INNOVATE - INSPIRE NANOTECHNOLOGY – NRAM (NANO RANDOM ACCESS MEMORY) RANJITHA. T, SANDHYA. R GOVERNMENT COLLEGE OF TECHNOLOGY, COIMBATORE 13. containing elements, nanotubes, are so small, NRAM technology will Abstract— NRAM (Nano Random Access Memory), is one of achieve very high memory densities: at least 10-100 times our current the important applications of nanotechnology. This paper has best. NRAM will operate electromechanically rather than just been prepared to cull out answers for the following crucial electrically, setting it apart from other memory technologies as a questions: nonvolatile form of memory, meaning data will be retained even What is NRAM? when the power is turned off. The creators of the technology claim it What is the need of it? has the advantages of all the best memory technologies with none of How can it be made possible? the disadvantages, setting it up to be the universal medium for What is the principle and technology involved in NRAM? memory in the future. What are the advantages and features of NRAM? The world is longing for all the things it can use within its TECHNOLOGY palm. As a result nanotechnology is taking its head in the world. Nantero's technology is based on a well-known effect in carbon Much of the electronic gadgets are reduced in size and increased nanotubes where crossed nanotubes on a flat surface can either be in efficiency by the nanotechnology. The memory storage devices touching or slightly separated in the vertical direction (normal to the are somewhat large in size due to the materials used for their substrate) due to Van der Waal's interactions.
Application Report SLAA334B–September 2006–Revised August 2018 MSP430 Flash Memory Characteristics ........................................................................................................................ MSP430 Applications ABSTRACT Flash memory is a widely used, reliable, and flexible nonvolatile memory to store software code and data in a microcontroller. Failing to handle the flash according to data-sheet specifications can result in unreliable operation of the application. This application report explains the physics behind these specifications and also gives recommendations for the correct management of flash memory on MSP430™ microcontrollers (MCUs). All examples are based on the flash memory used in the MSP430F1xx, MSP430F2xx, and MSP430F4xx microcontroller families. Contents 1 Flash Memory ................................................................................................................ 2 2 Simplified Flash Memory Cell .............................................................................................. 2 3 Flash Memory Parameters ................................................................................................. 3 3.1 Data Retention ...................................................................................................... 3 3.2 Flash Endurance.................................................................................................... 5 3.3 Cumulative Program Time......................................................................................... 5 4
COMPUTER ORGANIZATION & ARCHITECTURE EIE 411 Course Lecturer: Engr Banji Adedayo. Reg COREN. The characteristics of different computers vary considerably from category to category. Computers for data processing activities have different features than those with scientific features. Even computers configured within the same application area have variations in design. Computer architecture is the science of integrating those components to achieve a level of functionality and performance. It is logical organization or designs of the hardware that make up the computer system. The internal organization of a digital system is defined by the sequence of micro operations it performs on the data stored in its registers. The internal structure of a MICRO-PROCESSOR is called its architecture and includes the number lay out and functionality of registers, memory cell, decoders, controllers and clocks. HISTORY OF COMPUTER HARDWARE The first use of the word ‘Computer’ was recorded in 1613, referring to a person who carried out calculation or computation. A brief History: Computer as we all know 2day had its beginning with 19th century English Mathematics Professor named Chales Babage. He designed the analytical engine and it was this design that the basic frame work of the computer of today are based on. 1st Generation 1937-1946 The first electronic digital computer was built by Dr John V. Atanasoff & Berry Cliford (ABC). In 1943 an electronic computer named colossus was built for military. 1946 – The first general purpose digital computer- the Electronic Numerical Integrator and computer (ENIAC) was built. This computer weighed 30 tons and had 18,000 vacuum tubes which were used for processing.
Parallel Computer Architecture Introduction to Parallel Computing CIS 410/510 Department of Computer and Information Science Lecture 2 – Parallel Architecture Outline q Parallel architecture types q Instruction-level parallelism q Vector processing q SIMD q Shared memory ❍ Memory organization: UMA, NUMA ❍ Coherency: CC-UMA, CC-NUMA q Interconnection networks q Distributed memory q Clusters q Clusters of SMPs q Heterogeneous clusters of SMPs Introduction to Parallel Computing, University of Oregon, IPCC Lecture 2 – Parallel Architecture 2 Parallel Architecture Types • Uniprocessor • Shared Memory – Scalar processor Multiprocessor (SMP) processor – Shared memory address space – Bus-based memory system memory processor … processor – Vector processor bus processor vector memory memory – Interconnection network – Single Instruction Multiple processor … processor Data (SIMD) network processor … … memory memory Introduction to Parallel Computing, University of Oregon, IPCC Lecture 2 – Parallel Architecture 3 Parallel Architecture Types (2) • Distributed Memory • Cluster of SMPs Multiprocessor – Shared memory addressing – Message passing within SMP node between nodes – Message passing between SMP memory memory nodes … M M processor processor … … P … P P P interconnec2on network network interface interconnec2on network processor processor … P … P P … P memory memory … M M – Massively Parallel Processor (MPP) – Can also be regarded as MPP if • Many, many processors processor number is large Introduction to Parallel Computing, University of Oregon,
Memory Map: 68HC12 CPU and MC9S12DP256B Evaluation Board
ECE331 Handout 7: Microcontroller Peripheral Hardware MCS12DP256B Block Diagram: Peripheral I/O Devices associated with Ports Expanded Microcontroller Architecture: CPU and Peripheral Hardware Details • CPU – components and control signals from Control Unit – connections between Control Unit and Data Path – components and signal flow within data path • Peripheral Hardware Memory Map – Memory and I/O Devices connected through Bus – all peripheral blocks mapped to addresses so CPU can read/write them – physical memory type varies (register, PROM, RAM) Handout 7: Peripheral Hardware Page 1 Memory Map: 68HCS12 CPU and MC9S12DP256B Evaluation Board Configuration Register Set Physical Memory Handout 7: Peripheral Hardware Page 2 Handout 7: Peripheral Hardware Page 3 HCS12 Modes of Operation MODC MODB MODA Mode Port A Port B 0 0 0 special single chip G.P. I/O G.P. I/O special expanded 0 0 1 narrow Addr/Data Addr 0 1 0 special peripheral Addr/Data Addr/Data 0 1 1 special expanded wide Addr/Data Addr/Data 1 0 0 normal single chip G.P. I/O G.P. I/O normal expanded 1 0 1 narrow Addr/Data Addr 1 1 0 reserved -- -- 1 1 1 normal expanded wide Addr/Data Addr/Data G.P. = general purpose HCS12 Ports for Expanded Modes Handout 7: Peripheral Hardware Page 4 Memory Basics •RAM: Random Access Memory – historically defined as memory array with individual bit access – refers to memory with both Read and Write capabilities •ROM: Read Only Memory – no capabilities for “online” memory Write operations – Write typically requires high voltages or erasing by UV light • Volatility of Memory – volatile memory loses data over time or when power is removed • RAM is volatile – non-volatile memory stores date even when power is removed • ROM is no n-vltilvolatile • Static vs.
The Rise of the Flash Memory Market: Its Impact on Firm
The Rise of the Flash Web version: Memory Market: Its Impact July 2007 on Firm Behavior and Author: Global Semiconductor Falan Yinug1 Trade Patterns Abstract This article addresses three questions about the flash memory market. First, will the growth of the flash memory market be a short- or long-term phenomenon? Second, will the growth of the flash memory market prompt changes in firm behavior and industry structure? Third, what are the implications for global semiconductor trade patterns of flash memory market growth? The analysis concludes that flash memory market growth is a long-term phenomenon to which producers have responded in four distinct ways. It also concludes that the rise in flash memory demand has intensified current semiconductor trade patterns but has not shifted them fundamentally. 1 Falan Yinug (Falan.Yinug@usitc.gov) is a International Trade Analyst from the Office of Industries. His words are strictly his own and do not represent the opinions of the US International Trade Commission or of any of its Commissioners. 1 Introduction The past few years have witnessed rapid growth in a particular segment of the 2 semiconductor market known as flash memory. In each of the past five years, for example, flash memory market growth has either outpaced or equaled that 3 of the total integrated circuit (IC) market (McClean et al 2004-2007, section 5). One observer expects flash memory to have the third-strongest market growth rate over the next six years among all IC product categories (McClean et al 2007, 5-6). As a result, the flash memory share of the total IC market has increased from 5.5 percent in 2002, to 8.1 percent in 2005.
Charles Lindsey the Mechanical Differential Analyser Built by Metropolitan Vickers in 1935, to the Order of Prof
Issue Number 51 Summer 2010 Computer Conservation Society Aims and objectives The Computer Conservation Society (CCS) is a co-operative venture between the British Computer Society (BCS), the Science Museum of London and the Museum of Science and Industry (MOSI) in Manchester. The CCS was constituted in September 1989 as a Specialist Group of the British Computer Society. It is thus covered by the Royal Charter and charitable status of the BCS. The aims of the CCS are: To promote the conservation of historic computers and to identify existing computers which may need to be archived in the future, To develop awareness of the importance of historic computers, To develop expertise in the conservation and restoration of historic computers, To represent the interests of Computer Conservation Society members with other bodies, To promote the study of historic computers, their use and the history of the computer industry, To publish information of relevance to these objectives for the information of Computer Conservation Society members and the wider public. Membership is open to anyone interested in computer conservation and the history of computing. The CCS is funded and supported by voluntary subscriptions from members, a grant from the BCS, fees from corporate membership, donations, and by the free use of the facilities of both museums. Some charges may be made for publications and attendance at seminars and conferences. There are a number of active Projects on specific computer restorations and early computer technologies and software.
Great Encounters That Led Me to the Invention of Flash Memory
Honda Foundation Report No. 174 Commemorative lecture at the 39th Honda Prize Award Ceremony on the 19th November 2018 Great Encounters That Led Me to the Invention of Flash Memory Dr. Fujio Masuoka Professor Emeritus, Tohoku University Representative’s Address : Dr. Koji Sakui Principal Scientist, Honda Research Institute Japan Co., Ltd. Dr. Fujio Masuoka Professor Emeritus, Tohoku University ■Date of Birth ■Major Awards Received (out of 16 awards) May 8th, 1943 1980: Invention Award, National Commendation for Invention, Japan Institute for Promoting Invention and Innovation ■Biography 1997: IEEE, The Morris N. Liebmann Memorial Award 1966: Graduated from Department of Electronic 2000: The Main Prize of Ichimura Industrial Award, the New Engineering, School of Engineering, Tohoku Technology Development Foundation University 2002: International Conference on Solid State Devices and 1971: Obtained a doctorate in engineering from Materials, SSDM Award Department of Electronic Engineering, Graduate 2005: The Economist Innovation Awards School of Engineering, Tohoku University 2007: Medal of Honor with the Purple Ribbon 1971: Joined Tokyo Shibaura Electric Co., Ltd. 2012: The Photographic Society of America (PSA), Progress Medal (currently Toshiba Corporation) 2013: USA Flash Memory Summit, Lifetime Achievement Award 1994: Resigned Toshiba Corporation and appointed as a 2013: Person of Cultural Merit professor of Graduate School of Information 2017: Orders of the Sacred Treasure, Gold and Silver Star Sciences, Tohoku University 1996: Transitioned to a professor of Research Institute Substitute Lecturer: Dr. Koji Sakui of Electrical Communication, Tohoku University 2005: Appointed as the director and chief technology Principal Scientist officer of Unisantis Electronics (Japan) Ltd. Honda Research Institute Japan Co., Ltd. 2007: Retired Tohoku University and appointed as a professor emeritus of the Tohoku University 2012: Changed the corporate name from Unisantis ■Biography Electronics (Japan) Ltd.