AN568: EEPROM Emulation for Flash Microcontrollers
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Chapter 3 Semiconductor Memories
Chapter 3 Semiconductor Memories Jin-Fu Li Department of Electrical Engineering National Central University Jungli, Taiwan Outline Introduction Random Access Memories Content Addressable Memories Read Only Memories Flash Memories Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 2 Overview of Memory Types Semiconductor Memories Read/Write Memory or Random Access Memory (RAM) Read Only Memory (ROM) Random Access Non-Random Access Memory (RAM) Memory (RAM) •Mask (Fuse) ROM •Programmable ROM (PROM) •Erasable PROM (EPROM) •Static RAM (SRAM) •FIFO/LIFO •Electrically EPROM (EEPROM) •Dynamic RAM (DRAM) •Shift Register •Flash Memory •Register File •Content Addressable •Ferroelectric RAM (FRAM) Memory (CAM) •Magnetic RAM (MRAM) Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 3 Memory Elements – Memory Architecture Memory elements may be divided into the following categories Random access memory Serial access memory Content addressable memory Memory architecture 2m+k bits row decoder row decoder 2n-k words row decoder row decoder column decoder k column mux, n-bit address sense amp, 2m-bit data I/Os write buffers Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 4 1-D Memory Architecture S0 S0 Word0 Word0 S1 S1 Word1 Word1 S2 S2 Word2 Word2 A0 S3 S3 A1 Decoder Ak-1 Sn-2 Storage Sn-2 Wordn-2 element Wordn-2 Sn-1 Sn-1 Wordn-1 Wordn-1 m-bit m-bit Input/Output Input/Output n select signals are reduced n select signals: S0-Sn-1 to k address signals: A0-Ak-1 Advanced Reliable Systems (ARES) Lab. Jin-Fu Li, EE, NCU 5 Memory Architecture S0 Word0 Wordi-1 S1 A0 A1 Ak-1 Row Decoder Sn-1 Wordni-1 A 0 Column Decoder Aj-1 Sense Amplifier Read/Write Circuit m-bit Input/Output Advanced Reliable Systems (ARES) Lab. -
Hard Disk Drives
37 Hard Disk Drives The last chapter introduced the general concept of an I/O device and showed you how the OS might interact with such a beast. In this chapter, we dive into more detail about one device in particular: the hard disk drive. These drives have been the main form of persistent data storage in computer systems for decades and much of the development of file sys- tem technology (coming soon) is predicated on their behavior. Thus, it is worth understanding the details of a disk’s operation before building the file system software that manages it. Many of these details are avail- able in excellent papers by Ruemmler and Wilkes [RW92] and Anderson, Dykes, and Riedel [ADR03]. CRUX: HOW TO STORE AND ACCESS DATA ON DISK How do modern hard-disk drives store data? What is the interface? How is the data actually laid out and accessed? How does disk schedul- ing improve performance? 37.1 The Interface Let’s start by understanding the interface to a modern disk drive. The basic interface for all modern drives is straightforward. The drive consists of a large number of sectors (512-byte blocks), each of which can be read or written. The sectors are numbered from 0 to n − 1 on a disk with n sectors. Thus, we can view the disk as an array of sectors; 0 to n − 1 is thus the address space of the drive. Multi-sector operations are possible; indeed, many file systems will read or write 4KB at a time (or more). However, when updating the disk, the only guarantee drive manufacturers make is that a single 512-byte write is atomic (i.e., it will either complete in its entirety or it won’t com- plete at all); thus, if an untimely power loss occurs, only a portion of a larger write may complete (sometimes called a torn write). -
Z/OS ICSF Overview How to Send Your Comments to IBM
z/OS Version 2 Release 3 Cryptographic Services Integrated Cryptographic Service Facility Overview IBM SC14-7505-08 Note Before using this information and the product it supports, read the information in “Notices” on page 81. This edition applies to ICSF FMID HCR77D0 and Version 2 Release 3 of z/OS (5650-ZOS) and to all subsequent releases and modifications until otherwise indicated in new editions. Last updated: 2020-05-25 © Copyright International Business Machines Corporation 1996, 2020. US Government Users Restricted Rights – Use, duplication or disclosure restricted by GSA ADP Schedule Contract with IBM Corp. Contents Figures................................................................................................................ vii Tables.................................................................................................................. ix About this information.......................................................................................... xi ICSF features...............................................................................................................................................xi Who should use this information................................................................................................................ xi How to use this information........................................................................................................................ xi Where to find more information.................................................................................................................xii -
Section 10 Flash Technology
10 FLASH TECHNOLOGY Overview Flash memory technology is a mix of EPROM and EEPROM technologies. The term “flash” was chosen because a large chunk of memory could be erased at one time. The name, therefore, distinguishes flash devices from EEPROMs, where each byte is erased individually. Flash memory technology is today a mature technology. Flash memory is a strong com- petitor to other memories such as EPROMs, EEPROMs, and to some DRAM applications. Figure 10-1 shows the density comparison of a flash versus other memories. 64M 16M 4M DRAM/EPROM 1M SRAM/EEPROM Density 256K Flash 64K 1980 1982 1984 1986 1988 1990 1992 1994 1996 Year Source: Intel/ICE, "Memory 1996" 18613A Figure 10-1. Flash Density Versus Other Memory How the Device Works The elementary flash cell consists of one transistor with a floating gate, similar to an EPROM cell. However, technology and geometry differences between flash devices and EPROMs exist. In particular, the gate oxide between the silicon and the floating gate is thinner for flash technology. It is similar to the tunnel oxide of an EEPROM. Source and INTEGRATED CIRCUIT ENGINEERING CORPORATION 10-1 Flash Technology drain diffusions are also different. Figure 10-2 shows a comparison between a flash cell and an EPROM cell with the same technology complexity. Due to thinner gate oxide, the flash device will be more difficult to process. CMOS Flash Cell CMOS EPROM Cell Mag. 10,000x Mag. 10,000x Flash Memory Cell – Larger transistor – Thinner floating gate – Thinner oxide (100-200Å) Photos by ICE 17561A Figure 10-2. -
Nanotechnology ? Nram (Nano Random Access
International Journal Of Engineering Research and Technology (IJERT) IFET-2014 Conference Proceedings INTERFACE ECE T14 INTRACT – INNOVATE - INSPIRE NANOTECHNOLOGY – NRAM (NANO RANDOM ACCESS MEMORY) RANJITHA. T, SANDHYA. R GOVERNMENT COLLEGE OF TECHNOLOGY, COIMBATORE 13. containing elements, nanotubes, are so small, NRAM technology will Abstract— NRAM (Nano Random Access Memory), is one of achieve very high memory densities: at least 10-100 times our current the important applications of nanotechnology. This paper has best. NRAM will operate electromechanically rather than just been prepared to cull out answers for the following crucial electrically, setting it apart from other memory technologies as a questions: nonvolatile form of memory, meaning data will be retained even What is NRAM? when the power is turned off. The creators of the technology claim it What is the need of it? has the advantages of all the best memory technologies with none of How can it be made possible? the disadvantages, setting it up to be the universal medium for What is the principle and technology involved in NRAM? memory in the future. What are the advantages and features of NRAM? The world is longing for all the things it can use within its TECHNOLOGY palm. As a result nanotechnology is taking its head in the world. Nantero's technology is based on a well-known effect in carbon Much of the electronic gadgets are reduced in size and increased nanotubes where crossed nanotubes on a flat surface can either be in efficiency by the nanotechnology. The memory storage devices touching or slightly separated in the vertical direction (normal to the are somewhat large in size due to the materials used for their substrate) due to Van der Waal's interactions. -
Detection Method of Data Integrity in Network Storage Based on Symmetrical Difference
S S symmetry Article Detection Method of Data Integrity in Network Storage Based on Symmetrical Difference Xiaona Ding School of Electronics and Information Engineering, Sias University of Zhengzhou, Xinzheng 451150, China; [email protected] Received: 15 November 2019; Accepted: 26 December 2019; Published: 3 February 2020 Abstract: In order to enhance the recall and the precision performance of data integrity detection, a method to detect the network storage data integrity based on symmetric difference was proposed. Through the complete automatic image annotation system, the crawler technology was used to capture the image and related text information. According to the automatic word segmentation, pos tagging and Chinese word segmentation, the feature analysis of text data was achieved. Based on the symmetrical difference algorithm and the background subtraction, the feature extraction of image data was realized. On the basis of data collection and feature extraction, the sentry data segment was introduced, and then the sentry data segment was randomly selected to detect the data integrity. Combined with the accountability scheme of data security of the trusted third party, the trusted third party was taken as the core. The online state judgment was made for each user operation. Meanwhile, credentials that cannot be denied by both parties were generated, and thus to prevent the verifier from providing false validation results. Experimental results prove that the proposed method has high precision rate, high recall rate, and strong reliability. Keywords: symmetric difference; network; data integrity; detection 1. Introduction In recent years, the cloud computing becomes a new shared infrastructure based on the network. Based on Internet, virtualization, and other technologies, a large number of system pools and other resources are combined to provide users with a series of convenient services [1]. -
Linux Data Integrity Extensions
Linux Data Integrity Extensions Martin K. Petersen Oracle [email protected] Abstract The software stack, however, is rapidly growing in com- plexity. This implies an increasing failure potential: Many databases and filesystems feature checksums on Harddrive firmware, RAID controller firmware, host their logical blocks, enabling detection of corrupted adapter firmware, operating system code, system li- data. The scenario most people are familiar with in- braries, and application errors. There are many things volves bad sectors which develop while data is stored that can go wrong from the time data is generated in on disk. However, many corruptions are actually a re- host memory until it is stored physically on disk. sult of errors that occurred when the data was originally written. While a database or filesystem can detect the Most storage devices feature extensive checking to pre- corruption when data is eventually read back, the good vent errors. However, these protective measures are al- data may have been lost forever. most exclusively being deployed internally to the de- vice in a proprietary fashion. So far, there have been A recent addition to SCSI allows extra protection infor- no means for collaboration between the layers in the I/O mation to be exchanged between controller and disk. We stack to ensure data integrity. have extended this capability up into Linux, allowing filesystems (and eventually applications) to be able to at- An extension to the SCSI family of protocols tries to tach integrity metadata to I/O requests. Controllers and remedy this by defining a way to check the integrity of disks can then verify the integrity of an I/O before com- an request as it traverses the I/O stack. -
Nasdeluxe Z-Series
NASdeluxe Z-Series Benefit from scalable ZFS data storage By partnering with Starline and with Starline Computer’s NASdeluxe Open-E, you receive highly efficient Z-series and Open-E JovianDSS. This and reliable storage solutions that software-defined storage solution is offer: Enhanced Storage Performance well-suited for a wide range of applica- tions. It caters perfectly to the needs • Great adaptability Tiered RAM and SSD cache of enterprises that are looking to de- • Tiered and all-flash storage Data integrity check ploy a flexible storage configuration systems which can be expanded to a high avail- Data compression and in-line • High IOPS through RAM and SSD ability cluster. Starline and Open-E can data deduplication caching look back on a strategic partnership of Thin provisioning and unlimited • Superb expandability with more than 10 years. As the first part- number of snapshots and clones ner with a Gold partnership level, Star- Starline’s high-density JBODs – line has always been working hand in without downtime Simplified management hand with Open-E to develop and de- Flexible scalability liver innovative data storage solutions. Starline’s NASdeluxe Z-Series offers In fact, Starline supports worldwide not only great features, but also great Hardware independence enterprises in managing and pro- flexibility – thanks to its modular archi- tecting their storage, with over 2,800 tecture. Open-E installations to date. www.starline.de Z-Series But even with a standard configuration with nearline HDDs IOPS and SSDs for caching, you will be able to achieve high IOPS 250 000 at a reasonable cost. -
Use External Storage Devices Like Pen Drives, Cds, and Dvds
External Intel® Learn Easy Steps Activity Card Storage Devices Using external storage devices like Pen Drives, CDs, and DVDs loading Videos Since the advent of computers, there has been a need to transfer data between devices and/or store them permanently. You may want to look at a file that you have created or an image that you have taken today one year later. For this it has to be stored somewhere securely. Similarly, you may want to give a document you have created or a digital picture you have taken to someone you know. There are many ways of doing this – online and offline. While online data transfer or storage requires the use of Internet, offline storage can be managed with minimum resources. The only requirement in this case would be a storage device. Earlier data storage devices used to mainly be Floppy drives which had a small storage space. However, with the development of computer technology, we today have pen drives, CD/DVD devices and other removable media to store and transfer data. With these, you store/save/copy files and folders containing data, pictures, videos, audio, etc. from your computer and even transfer them to another computer. They are called secondary storage devices. To access the data stored in these devices, you have to attach them to a computer and access the stored data. Some of the examples of external storage devices are- Pen drives, CDs, and DVDs. Introduction to Pen Drive/CD/DVD A pen drive is a small self-powered drive that connects to a computer directly through a USB port. -
Nanotechnology Trends in Nonvolatile Memory Devices
IBM Research Nanotechnology Trends in Nonvolatile Memory Devices Gian-Luca Bona [email protected] IBM Research, Almaden Research Center © 2008 IBM Corporation IBM Research The Elusive Universal Memory © 2008 IBM Corporation IBM Research Incumbent Semiconductor Memories SRAM Cost NOR FLASH DRAM NAND FLASH Attributes for universal memories: –Highest performance –Lowest active and standby power –Unlimited Read/Write endurance –Non-Volatility –Compatible to existing technologies –Continuously scalable –Lowest cost per bit Performance © 2008 IBM Corporation IBM Research Incumbent Semiconductor Memories SRAM Cost NOR FLASH DRAM NAND FLASH m+1 SLm SLm-1 WLn-1 WLn WLn+1 A new class of universal storage device : – a fast solid-state, nonvolatile RAM – enables compact, robust storage systems with solid state reliability and significantly improved cost- performance Performance © 2008 IBM Corporation IBM Research Non-volatile, universal semiconductor memory SL m+1 SL m SL m-1 WL n-1 WL n WL n+1 Everyone is looking for a dense (cheap) crosspoint memory. It is relatively easy to identify materials that show bistable hysteretic behavior (easily distinguishable, stable on/off states). IBM © 2006 IBM Corporation IBM Research The Memory Landscape © 2008 IBM Corporation IBM Research IBM Research Histogram of Memory Papers Papers presented at Symposium on VLSI Technology and IEDM; Ref.: G. Burr et al., IBM Journal of R&D, Vol.52, No.4/5, July 2008 © 2008 IBM Corporation IBM Research IBM Research Emerging Memory Technologies Memory technology remains an -
MRAM Technology Status
National Aeronautics and Space Administration MRAM Technology Status Jason Heidecker Jet Propulsion Laboratory Pasadena, California Jet Propulsion Laboratory California Institute of Technology Pasadena, California JPL Publication 13-3 2/13 National Aeronautics and Space Administration MRAM Technology Status NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance Jason Heidecker Jet Propulsion Laboratory Pasadena, California NASA WBS: 104593 JPL Project Number: 104593 Task Number: 40.49.01.09 Jet Propulsion Laboratory 4800 Oak Grove Drive Pasadena, CA 91109 http://nepp.nasa.gov i This research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not constitute or imply its endorsement by the United States Government or the Jet Propulsion Laboratory, California Institute of Technology. ©2013. California Institute of Technology. Government sponsorship acknowledged. ii TABLE OF CONTENTS 1.0 Introduction ............................................................................................................................................................ 1 2.0 MRAM Technology ................................................................................................................................................ 2 2.1 -
MSP430 Flash Memory Characteristics (Rev. B)
Application Report SLAA334B–September 2006–Revised August 2018 MSP430 Flash Memory Characteristics ........................................................................................................................ MSP430 Applications ABSTRACT Flash memory is a widely used, reliable, and flexible nonvolatile memory to store software code and data in a microcontroller. Failing to handle the flash according to data-sheet specifications can result in unreliable operation of the application. This application report explains the physics behind these specifications and also gives recommendations for the correct management of flash memory on MSP430™ microcontrollers (MCUs). All examples are based on the flash memory used in the MSP430F1xx, MSP430F2xx, and MSP430F4xx microcontroller families. Contents 1 Flash Memory ................................................................................................................ 2 2 Simplified Flash Memory Cell .............................................................................................. 2 3 Flash Memory Parameters ................................................................................................. 3 3.1 Data Retention ...................................................................................................... 3 3.2 Flash Endurance.................................................................................................... 5 3.3 Cumulative Program Time......................................................................................... 5 4