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Data & Computer Recovery Guidelines
Data & Computer Recovery Guidelines Data & Computer Recovery Guidelines This document contains general guidelines for restoring computer operating following certain types of disasters. It should be noted these guidelines will not fit every type of disaster or every organization and that you may need to seek outside help to recover and restore your operations. This document is divided into five parts. The first part provides general guidelines which are independent of the type of disaster, the next three sections deal with issues surrounding specific disaster types (flood/water damage, power surge, and physical damage). The final section deals with general recommendations to prepare for the next disaster. General Guidelines 2. Your first step is to restore the computing equipment. These are general guidelines for recovering after any type If you do try to power on the existing equipment, it of disaster or computer failure. If you have a disaster is best to remove the hard drive(s) first to make sure recovery plan, then you should be prepared; however, the system will power on. Once you have determined there may be things that were not covered to help the system powers on, you can reinstall the hard drive you recover. This section is divided into two sections and power the system back on. Hopefully, everything (computer system recovery, data recovery) works at that point. Note: this should not be tried in the case of a water or extreme heat damage. Computer System Recovery 3. If the computer will not power on then you can either The first step is to get your physical computer systems try to fix the computer or in many cases it is easier, running again. -
Data Remanence in Non-Volatile Semiconductor Memory (Part I)
Data remanence in non-volatile semiconductor memory (Part I) Security Group Sergei Skorobogatov Web: www.cl.cam.ac.uk/~sps32/ Email: [email protected] Introduction Data remanence is the residual physical representation of data that has UV EPROM EEPROM Flash EEPROM been erased or overwritten. In non-volatile programmable devices, such as UV EPROM, EEPROM or Flash, bits are stored as charge in the floating gate of a transistor. After each erase operation, some of this charge remains. It shifts the threshold voltage (VTH) of the transistor which can be detected by the sense amplifier while reading data. Microcontrollers use a ‘protection fuse’ bit that restricts unauthorized access to on-chip memory if activated. Very often, this fuse is embedded in the main memory array. In this case, it is erased simultaneously with the memory. Better protection can be achieved if the fuse is located close to the memory but has a separate control circuit. This allows it to be permanently monitored as well as hardware protected from being erased too early, thus making sure that by the time the fuse is reset no data is left inside the memory. In some smartcards and microcontrollers, a password-protected boot- Structure, cross-section and operation modes for different memory types loader restricts firmware updates and data access to authorized users only. Usually, the on-chip operating system erases both code and data How much residual charge is left inside the memory cells memory before uploading new code, thus preventing any new after a standard erase operation? Is it possible to recover data application from accessing previously stored secrets. -
Databridge ETL Solution Datasheet
DATASHEET Extract and Transform MCP Host Data for Improved KEY FEATURES Client configuration tool for Analysis and Decision Support easy customization of table layout. Fast, well-informed business decisions require access to your organization’s key performance Dynamic before-and-after indicators residing on critical database systems. But the prospect of exposing those systems images (BI-AI) based on inevitably raises concerns around security, data integrity, cost, and performance. key change. 64-bit clients. For organizations using the Unisys ClearPath MCP server and its non-relational DMSII • Client-side management database, there’s an additional challenge: Most business intelligence tools support only console. relational databases. • Ability to run the client as a service or a daemon. The Only True ETL Solution for DMSII Data • Multi-threaded clients to That’s why businesses like yours are turning to Attachmate® DATABridge™. It’s the only increase processing speed. true Extract, Transform, Load (ETL) solution that securely integrates Unisys MCP DMSII • Support for Windows Server and non-DMSII data into a secondary system. 2012. • Secure automation of Unisys With DATABridge, you can easily integrate production data into a relational database or MCP data replication. another DMSII database located on an entirely different Unisys host system. And because • Seamless integration of DATABridge clients for Oracle and Microsoft SQL Server support a breadth of operating both DMSII and non-DMSII environments (including Windows 7, Windows Server 2012, Windows Server 2008, UNIX, data with Oracle, Microsoft SQL, and other relational AIX, SUSE Linux, and Red Hat Linux), DATABridge solutions fit seamlessly into your existing databases. infrastructure. -
Fast Non-Volatile RAM Products Superior Price and Performance from a Source You Can Trust
Fast Non-Volatile RAM Products Superior price and performance from a source you can trust www.freescale.com/MRAM The Future of Non-Volatile Read/Write Memory is Magnetic Freescale Semiconductor delivers the world’s non-volatile for greater than 20 years. Commercial MRAM Products Selector Guide Freescale MRAM Features first commercial magnetoresistive random SRAM-compatible packaging assures Part Number Density Configuration Voltage Speed Grades Temperature Package RoHS Compliant • 35 ns read/write cycle time access memory (MRAM) products. Our alternate sourcing from other suppliers. MR2A16ATS35C 4 Mb 256 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Unlimited read/write endurance MRAM products store data using magnetic MR1A16AYS35 2 Mb 128 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • 3.3V ± 10 percent power supply polarization rather than electric charge. Extended Temperature Range and MR0A16AYS35 1 Mb 64 Kb x 16 3.3V 35 ns 0 to 70°C 44-TSOP Type II √ • Always non-volatile with greater than MRAM stores data for decades while reading Superior Reliability 20-year retention and writing at SRAM speed without wear- MRAM delivers a 3 volt high-density out. MRAM products use small, simple • Magnetically shielded to greater than non-volatile RAM that operates over extended cells to deliver the highest density and best 25 oersted (Oe) temperature. MRAM does not exhibit the price/performance in the non-volatile RAM • Commercial, Industrial and Extended charge storage failure modes that limit the marketplace. With our new expanded product Temperature Options data retention or endurance of line, we serve a growing portion of the other technologies. -
Database Analyst Ii
Recruitment No.: 20.186 Date Opened: 5/25/2021 DATABASE ANALYST II SALARY: $5,794 to $8,153 monthly (26 pay periods annually) FINAL FILING DATE: We are accepting applications until closing at 5 pm, June 8, 2021 IT IS MANDATORY THAT YOU COMPLETE THE SUPPLEMENTAL QUESTIONNAIRE. YOUR APPLICATION WILL BE REJECTED IF YOU DO NOT PROVIDE ALL NECESSARY INFORMATION. THE POSITION The Human Resources Department is accepting applications for the position of Database Analyst II. The current opening is for a limited term, benefitted and full-time position in the Information Technology department, but the list may be utilized to fill future regular and full- time vacancies for the duration of the list. The term length for the current vacancy is not guaranteed but cannot exceed 36 months. The normal work schedule is Monday through Friday, 8 – 5 pm; a flex schedule may be available. The Information Technology department is looking for a full-time, limited-term Database Analyst I/II to develop and manage the City’s Open Data platform. Initiatives include tracking city council goals, presenting data related to capital improvement projects, and measuring budget performance. This position is in the Data Intelligence Division. Our team sees data as more than rows and columns, it tells stories that yield invaluable insights that help us solve problems, make better decisions, and create solutions. This position is responsible for building and maintaining systems that unlock the power of data. The successful candidate will be able to create data analytics & business -
Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives
ERRORS, MITIGATION, AND RECOVERY IN FLASH MEMORY SSDS 1 Error Characterization, Mitigation, and Recovery in Flash Memory Based Solid-State Drives Yu Cai, Saugata Ghose, Erich F. Haratsch, Yixin Luo, and Onur Mutlu Abstract—NAND flash memory is ubiquitous in everyday life The transistor traps charge within its floating gate, which dic- today because its capacity has continuously increased and cost has tates the threshold voltage level at which the transistor turns on. continuously decreased over decades. This positive growth is a The threshold voltage level of the floating gate is used to de- result of two key trends: (1) effective process technology scaling, termine the value of the digital data stored inside the transistor. and (2) multi-level (e.g., MLC, TLC) cell data coding. Unfortu- When manufacturing process scales down to a smaller tech- nately, the reliability of raw data stored in flash memory has also nology node, the size of each flash memory cell, and thus the continued to become more difficult to ensure, because these two trends lead to (1) fewer electrons in the flash memory cell (floating size of the transistor, decreases, which in turn reduces the gate) to represent the data and (2) larger cell-to-cell interference amount of charge that can be trapped within the floating gate. and disturbance effects. Without mitigation, worsening reliability Thus, process scaling increases storage density by enabling can reduce the lifetime of NAND flash memory. As a result, flash more cells to be placed in a given area, but it also causes relia- memory controllers in solid-state drives (SSDs) have become bility issues, which are the focus of this article. -
The Rise of the Flash Memory Market: Its Impact on Firm
The Rise of the Flash Web version: Memory Market: Its Impact July 2007 on Firm Behavior and Author: Global Semiconductor Falan Yinug1 Trade Patterns Abstract This article addresses three questions about the flash memory market. First, will the growth of the flash memory market be a short- or long-term phenomenon? Second, will the growth of the flash memory market prompt changes in firm behavior and industry structure? Third, what are the implications for global semiconductor trade patterns of flash memory market growth? The analysis concludes that flash memory market growth is a long-term phenomenon to which producers have responded in four distinct ways. It also concludes that the rise in flash memory demand has intensified current semiconductor trade patterns but has not shifted them fundamentally. 1 Falan Yinug ([email protected]) is a International Trade Analyst from the Office of Industries. His words are strictly his own and do not represent the opinions of the US International Trade Commission or of any of its Commissioners. 1 Introduction The past few years have witnessed rapid growth in a particular segment of the 2 semiconductor market known as flash memory. In each of the past five years, for example, flash memory market growth has either outpaced or equaled that 3 of the total integrated circuit (IC) market (McClean et al 2004-2007, section 5). One observer expects flash memory to have the third-strongest market growth rate over the next six years among all IC product categories (McClean et al 2007, 5-6). As a result, the flash memory share of the total IC market has increased from 5.5 percent in 2002, to 8.1 percent in 2005. -
Magnetic Storage- Magnetic-Core Memory, Magnetic Tape,RAM
Magnetic storage- From magnetic tape to HDD Juhász Levente 2016.02.24 Table of contents 1. Introduction 2. Magnetic tape 3. Magnetic-core memory 4. Bubble memory 5. Hard disk drive 6. Applications, future prospects 7. References 1. Magnetic storage - introduction Magnetic storage: Recording & storage of data on a magnetised medium A form of „non-volatile” memory Data accessed using read/write heads Widely used for computer data storage, audio and video applications, magnetic stripe cards etc. 1. Magnetic storage - introduction 2. Magnetic tape 1928 Germany: Magnetic tape for audio recording by Fritz Pfleumer • Fe2O3 coating on paper stripes, further developed by AEG & BASF 1951: UNIVAC- first use of magnetic tape for data storage • 12,7 mm Ni-plated brass-phosphorus alloy tape • 128 characters /inch data density • 7000 ch. /s writing speed 2. Magnetic tape 2. Magnetic tape 1950s: IBM : patented magnetic tape technology • 12,7 mm wide magnetic tape on a 26,7 cm reel • 370-730 m long tapes 1980: 1100 m PET –based tape • 18 cm reel for developers • 7, 9 stripe tapes (8 bit + parity) • Capacity up to 140 MB DEC –tapes for personal use 2. Magnetic tape 2014: Sony & IBM recorded 148 Gbit /squareinch tape capacity 185 TB! 2. Magnetic tape Remanent structural change in a magnetic medium Analog or digital recording (binary storage) Longitudinal or perpendicular recording Ni-Fe –alloy core in tape head 2. Magnetic tape Hysteresis in magnetic recording 40-150 kHz bias signal applied to the tape to remove its „magnetic history” and „stir” the magnetization Each recorded signal will encounter the same magnetic condition Current in tape head proportional to the signal to be recorded 2. -
EEPROM Emulation
...the world's most energy friendly microcontrollers EEPROM Emulation AN0019 - Application Note Introduction This application note demonstrates a way to use the flash memory of the EFM32 to emulate single variable rewritable EEPROM memory through software. The example API provided enables reading and writing of single variables to non-volatile flash memory. The erase-rewrite algorithm distributes page erases and thereby doing wear leveling. This application note includes: • This PDF document • Source files (zip) • Example C-code • Multiple IDE projects 2013-09-16 - an0019_Rev1.09 1 www.silabs.com ...the world's most energy friendly microcontrollers 1 General Theory 1.1 EEPROM and Flash Based Memory EEPROM stands for Electrically Erasable Programmable Read-Only Memory and is a type of non- volatile memory that is byte erasable and therefore often used to store small amounts of data that must be saved when power is removed. The EFM32 microcontrollers do not include an embedded EEPROM module for byte erasable non-volatile storage, but all EFM32s do provide flash memory for non-volatile data storage. The main difference between flash memory and EEPROM is the erasable unit size. Flash memory is block-erasable which means that bytes cannot be erased individually, instead a block consisting of several bytes need to be erased at the same time. Through software however, it is possible to emulate individually erasable rewritable byte memory using block-erasable flash memory. To provide EEPROM functionality for the EFM32s in an application, there are at least two options available. The first one is to include an external EEPROM module when designing the hardware layout of the application. -
PROTECTING DATA from RANSOMWARE and OTHER DATA LOSS EVENTS a Guide for Managed Service Providers to Conduct, Maintain and Test Backup Files
PROTECTING DATA FROM RANSOMWARE AND OTHER DATA LOSS EVENTS A Guide for Managed Service Providers to Conduct, Maintain and Test Backup Files OVERVIEW The National Cybersecurity Center of Excellence (NCCoE) at the National Institute of Standards and Technology (NIST) developed this publication to help managed service providers (MSPs) improve their cybersecurity and the cybersecurity of their customers. MSPs have become an attractive target for cyber criminals. When an MSP is vulnerable its customers are vulnerable as well. Often, attacks take the form of ransomware. Data loss incidents—whether a ransomware attack, hardware failure, or accidental or intentional data destruction—can have catastrophic effects on MSPs and their customers. This document provides recommend- ations to help MSPs conduct, maintain, and test backup files in order to reduce the impact of these data loss incidents. A backup file is a copy of files and programs made to facilitate recovery. The recommendations support practical, effective, and efficient back-up plans that address the NIST Cybersecurity Framework Subcategory PR.IP-4: Backups of information are conducted, maintained, and tested. An organization does not need to adopt all of the recommendations, only those applicable to its unique needs. This document provides a broad set of recommendations to help an MSP determine: • items to consider when planning backups and buying a backup service/product • issues to consider to maximize the chance that the backup files are useful and available when needed • issues to consider regarding business disaster recovery CHALLENGE APPROACH Backup systems implemented and not tested or NIST Interagency Report 7621 Rev. 1, Small Business planned increase operational risk for MSPs. -
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UNIVERSITY OF CALIFORNIA Los Angeles Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical and Computer Engineering by Xiang Li 2018 © Copyright by Xiang Li 2018 ABSTRACT OF THE DISSERTATION Interface Engineering of Voltage-Controlled Embedded Magnetic Random Access Memory by Xiang Li Doctor of Philosophy in Electrical and Computer Engineering University of California, Los Angeles, 2018 Professor Kang Lung Wang, Chair Magnetic memory that utilizes spin to store information has become one of the most promising candidates for next-generation non-volatile memory. Electric-field-assisted writing of magnetic tunnel junctions (MTJs) that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers great potential for high density and low power memory applications. This emerging Magnetoelectric Random Access Memory (MeRAM) based on the VCMA effect has been investigated due to its lower switching current, compared with traditional current-controlled devices utilizing spin transfer torque (STT) or spin-orbit torque (SOT) for magnetization switching. It is of great promise to integrate MeRAM into the advanced CMOS back-end-of-line (BEOL) processes for on-chip embedded applications, and enable non-volatile electronic systems with low static power dissipation and instant-on operation capability. To achieve the full potential of MeRAM, it is critical to design magnetic materials with high voltage-induced ii writing efficiency, i.e. VCMA coefficient, to allow for low write energy, low write error rate, and high density MeRAM at advanced nodes. In this dissertation, we will first discuss the advantage of MeRAM over other memory technologies with a focus on array-level memory performance, system-level 3D integration, and scaling at advanced nodes. -
Great Encounters That Led Me to the Invention of Flash Memory
Honda Foundation Report No. 174 Commemorative lecture at the 39th Honda Prize Award Ceremony on the 19th November 2018 Great Encounters That Led Me to the Invention of Flash Memory Dr. Fujio Masuoka Professor Emeritus, Tohoku University Representative’s Address : Dr. Koji Sakui Principal Scientist, Honda Research Institute Japan Co., Ltd. Dr. Fujio Masuoka Professor Emeritus, Tohoku University ■Date of Birth ■Major Awards Received (out of 16 awards) May 8th, 1943 1980: Invention Award, National Commendation for Invention, Japan Institute for Promoting Invention and Innovation ■Biography 1997: IEEE, The Morris N. Liebmann Memorial Award 1966: Graduated from Department of Electronic 2000: The Main Prize of Ichimura Industrial Award, the New Engineering, School of Engineering, Tohoku Technology Development Foundation University 2002: International Conference on Solid State Devices and 1971: Obtained a doctorate in engineering from Materials, SSDM Award Department of Electronic Engineering, Graduate 2005: The Economist Innovation Awards School of Engineering, Tohoku University 2007: Medal of Honor with the Purple Ribbon 1971: Joined Tokyo Shibaura Electric Co., Ltd. 2012: The Photographic Society of America (PSA), Progress Medal (currently Toshiba Corporation) 2013: USA Flash Memory Summit, Lifetime Achievement Award 1994: Resigned Toshiba Corporation and appointed as a 2013: Person of Cultural Merit professor of Graduate School of Information 2017: Orders of the Sacred Treasure, Gold and Silver Star Sciences, Tohoku University 1996: Transitioned to a professor of Research Institute Substitute Lecturer: Dr. Koji Sakui of Electrical Communication, Tohoku University 2005: Appointed as the director and chief technology Principal Scientist officer of Unisantis Electronics (Japan) Ltd. Honda Research Institute Japan Co., Ltd. 2007: Retired Tohoku University and appointed as a professor emeritus of the Tohoku University 2012: Changed the corporate name from Unisantis ■Biography Electronics (Japan) Ltd.