Bonds, Bands, and Doping: How Do Leds Work? Periodic Trends Experiment
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Wide Band Gap Materials: Revolution in Automotive Power Electronics
20169052 16mm Wide Band Gap Materials: Revolution in Automotive Power Electronics Luca Bartolomeo 1) Luigi Abbatelli 2) Michele Macauda 2) Filippo Di Giovanni 2) Giuseppe Catalisano 2) Miroslav Ryzek 3) Daniel Kohout 3) 1) STMicroelectronics Japan, Shinagawa INTERCITY Tower A, 2-15-1, Konan, Minato-ku, 108-6017 Tokyo, Japan (E-mail: [email protected]) 2) STMicroelectronics , Italy 3) STMicroelectronics , Czech Republic ④④④ ④④④ Presented at the EVTeC and APE Japan on May 26, 2016 ABSTRACT : The number of Electric and Hybrid vehicles on the roads is increasing year over year. The role of power electronics is of paramount importance to improve their efficiency, keeping lighter and smaller systems. In this paper, the authors will specifically cover the use of Wide Band Gap (WBG) materials in Electric and Hybrid vehicles. It will be shown how SiC MOSFETs bring significant benefits compared to standard IGBTs silicon technology, in both efficiency and form factor. Comparison of the main electrical characteristics, between SiC-based and IGBT module, were simulated and validated by experimental tests in a real automotive environment. KEY WORDS : SiC, Wide Band Gap, IGBT, Power Module 1. INTRODUCTION When considering power transistors in the high voltage range Nowadays, an increased efficiency demand is required in (above 600V), SiC MOSFETs are an excellent alternative to the power electronics applications to have lighter and smaller standard silicon devices: they guarantee lower RON*Area values systems and to improve the range of new Electric (EV) and compared to the latest silicon-based Super-Junction MOSFETs, Hybrid vehicles (HEV). There is an on-going revolution in the especially in high temperature environment (1). -
Neutron Transmutation Doping of Silicon at Research Reactors
Silicon at Research Silicon Reactors Neutron Transmutation Doping of Doping Neutron Transmutation IAEA-TECDOC-1681 IAEA-TECDOC-1681 n NEUTRON TRANSMUTATION DOPING OF SILICON AT RESEARCH REACTORS 130010–2 VIENNA ISSN 1011–4289 ISBN 978–92–0– INTERNATIONAL ATOMIC AGENCY ENERGY ATOMIC INTERNATIONAL Neutron Transmutation Doping of Silicon at Research Reactors The following States are Members of the International Atomic Energy Agency: AFGHANISTAN GHANA NIGERIA ALBANIA GREECE NORWAY ALGERIA GUATEMALA OMAN ANGOLA HAITI PAKISTAN ARGENTINA HOLY SEE PALAU ARMENIA HONDURAS PANAMA AUSTRALIA HUNGARY PAPUA NEW GUINEA AUSTRIA ICELAND PARAGUAY AZERBAIJAN INDIA PERU BAHRAIN INDONESIA PHILIPPINES BANGLADESH IRAN, ISLAMIC REPUBLIC OF POLAND BELARUS IRAQ PORTUGAL IRELAND BELGIUM QATAR ISRAEL BELIZE REPUBLIC OF MOLDOVA BENIN ITALY ROMANIA BOLIVIA JAMAICA RUSSIAN FEDERATION BOSNIA AND HERZEGOVINA JAPAN SAUDI ARABIA BOTSWANA JORDAN SENEGAL BRAZIL KAZAKHSTAN SERBIA BULGARIA KENYA SEYCHELLES BURKINA FASO KOREA, REPUBLIC OF SIERRA LEONE BURUNDI KUWAIT SINGAPORE CAMBODIA KYRGYZSTAN CAMEROON LAO PEOPLES DEMOCRATIC SLOVAKIA CANADA REPUBLIC SLOVENIA CENTRAL AFRICAN LATVIA SOUTH AFRICA REPUBLIC LEBANON SPAIN CHAD LESOTHO SRI LANKA CHILE LIBERIA SUDAN CHINA LIBYA SWEDEN COLOMBIA LIECHTENSTEIN SWITZERLAND CONGO LITHUANIA SYRIAN ARAB REPUBLIC COSTA RICA LUXEMBOURG TAJIKISTAN CÔTE DIVOIRE MADAGASCAR THAILAND CROATIA MALAWI THE FORMER YUGOSLAV CUBA MALAYSIA REPUBLIC OF MACEDONIA CYPRUS MALI TUNISIA CZECH REPUBLIC MALTA TURKEY DEMOCRATIC REPUBLIC MARSHALL ISLANDS UGANDA -
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang1,2*, Bing Huang2, Erjun Kan3, Su-Huai Wei2, X. G. Gong1 1 Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, P. R. China 2National Renewable Energy Laboratory, Golden, Colorado 80401, USA 3Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People’s Republic of China e-mail: [email protected] Abstract Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. In this work, we develop a novel inverse-band structure design approach based on the particle swarming optimization algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with quasi- direct gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells. PACS: 71.20.-b,42.79.Ek,78.20.Ci,88.40.jj 1 Due to the high stability, high abundance, and the existence of an excellent compatible oxide (SiO2), Si is the leading material of microelectronic devices. Currently, the majority of solar cells fabricated to date have also been based on diamond Si in monocrystalline or large- grained polycrystalline form [1]. There are mainly two reasons for this: First, Si is the second most abundant element in the earth's crust; Second, the Si based photovoltaics (PV) industry could benefit from the successful Si based microelectronics industry. -
Modeling Techniques for Multijunction Solar Cells Meghan N
NUSOD 2018 Modeling Techniques for Multijunction Solar Cells Meghan N. Beattie Karin Hinzer Matthew M. Wilkins SUNLAB, Centre for Research in SUNLAB, Centre for Research in SUNLAB, Centre for Research in Photonics Photonics Photonics University of Ottawa University of Ottawa University of Ottawa Ottawa, Canada Ottawa, Canada Ottawa, Canada [email protected] Christopher E. Valdivia SUNLAB, Centre for Research in Photonics University of Ottawa Ottawa, Canada Abstract—Multi-junction solar cell efficiencies far exceed density of defects at the interface [4]. Many of these defects those attainable with silicon photovoltaics. Recently, this propagate towards the surface, resulting in threading technology has been applied to photonic power converters with dislocations that inhibit minority carrier collection [3] In this conversion efficiencies higher than 65%. These devices operate research, we are investigating the use of a voided germanium well in part because of luminescent coupling that occurs in the interface layer to intercept dislocations before they reach the multijunction device. We present modeling results to explain surface, enabling epitaxial growth of high quality Ge, IV how this boosts device efficiencies by approximately 70 mV per (e.g. SiGeSn), and III-V (e.g. InGaAs, InGaP) junction in GaAs devices. Luminescent coupling also increases semiconductors on Si substrates. efficiency in devices with four more junctions, however, the high cost of materials remains a barrier to their widespread By modelling multijunction solar cell designs on Si use. Substantial cost reduction could be achieved by replacing substrates, we investigate the impact of threading the germanium substrate with a less expensive alternative: dislocations on device performance. With highly doped Si, silicon. -
CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures)
CSE-Module- 3:LED PHYSICS CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures) Light Emitting Diodes (LEDs) Light Emitting Diodes (LEDs) are semiconductors p-n junction operating under proper forward biased conditions and are capable of emitting external spontaneous radiations in the visible range (370 nm to 770 nm) or the nearby ultraviolet and infrared regions of the electromagnetic spectrum General Structure LEDs are special diodes that emit light when connected in a circuit. They are frequently used as “pilot light” in electronic appliances in to indicate whether the circuit is closed or not. The structure and circuit symbol is shown in Fig.1. The two wires extending below the LED epoxy enclose or the “bulb” indicate how the LED should be connected into a circuit or not. The negative side of the LED is indicated in two ways (1) by the flat side of the bulb and (2) by the shorter of the two wires extending from the LED. The negative lead should be connected to the negative terminal of a battery. LEDs operate at relative low voltage between 1 and 4 volts, and draw current between 10 and 40 milliamperes. Voltages and Fig.-1 : Structure of LED current substantially above these values can melt a LED chip. The most important part of a light emitting diode (LED) is the semiconductor chip located in the centre of the bulb and is attached to the 1 CSE-Module- 3:LED top of the anvil. The chip has two regions separated by a junction. The p- region is dominated by positive electric charges, and the n-region is dominated by negative electric charges. -
The Band Gap of Silicon
Norton 0 The Band Gap of Silicon Matthew Norton, Erin Stefanik, Ryan Allured, and Drew Sulski Norton 1 Abstract This experiment was designed to find the band gap of silicon as well as the charge of an electron. A transistor was heated to various temperatures using a hot plate. The resistance was measured over the resistor and transistor in the circuit. In performing this experiment, it was found that the band gap of silicon was (1.10 ± 0.08) eV. In performing this experiment, it was also found that the charge of an electron was (1.77 ± 0.20) × 10 −19 C. Introduction When a substance is placed under the influence of an electric field, it can portray insulating, semi-conducting, semi-metallic, or metallic properties. Every crystalline structure has electrons that occupy energy bands. In a semiconductor, there is a gap in energy between valence band and the bottom of the conduction band. There are no allowed energy states for the electron within the energy gap. At absolute zero, all the electrons have energies within the valence band and the material it is insulating. As the temperature increases electrons gain enough energy to occupy the energy levels in the conduction band. The current through a transistor is given by the equation, qV I= I e kT − 1 0 (1) where I0 is the maximum current for a large reverse bias voltage, q is the charge of the electron, k is the Boltzmann constant, and T is the temperature in Kelvin. As long as V is not too large, the current depends only on the number of minority carriers in the conduction band and the rate at which they diffuse. -
Efficient Er/O Doped Silicon Light-Emitting Diodes at Communication Wavelength by Deep Cooling
Efficient Er/O Doped Silicon Light-Emitting Diodes at Communication Wavelength by Deep Cooling Huimin Wen1,#, Jiajing He1,#, Jin Hong2,#, Fangyu Yue2* & Yaping Dan1* 1University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, 200240, China. 2Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China. #These authors contributed equally * To whom correspondence should be addressed: [email protected], [email protected] Abstract A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the aggregation of erbium ions that are efficient non-radiative centers, formed during the standard rapid thermal treatment. Here, we apply a deep cooling process following the high- temperature annealing to suppress the aggregation of erbium ions by flushing with Helium gas cooled in liquid nitrogen. The resultant light emitting efficiency is increased to a record 14% at room temperature, two orders of magnitude higher than the sample treated by the standard rapid thermal annealing. The deep-cooling-processed Si samples were further made into light-emitting diodes. Bright electroluminescence with a spectral peak at 1.54 µm from the silicon-based diodes was also observed at room temperature. With these results, it is promising to develop efficient silicon lasers at communication wavelength for the monolithically integrated silicon photonics. The monolithic integration of fiber optics with complementary metal-oxide- semiconductor (CMOS) integrated circuits will significantly speed up the computing and data transmission of current communication networks.1-3 This technology requires efficient silicon-based lasers at communication wavelengths.4, 5 Unfortunately, silicon is an indirect bandgap semiconductor and cannot emit light at communication wavelengths. -
A New Strategy of Bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability
A New Strategy of bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability Rimsha Baloach University of Education Khurshid Ayub University of Education Tariq Mahmood University of Education Anila Asif University of Education Sobia Tabassum University of Education Mazhar Amjad Gilani ( [email protected] ) University of Education Original Research Full Papers Keywords: Boron phosphide (B12P12), Bi-alkali metal doping, Nonlinear optical response (NLO), Density functional theory Posted Date: February 11th, 2021 DOI: https://doi.org/10.21203/rs.3.rs-207373/v1 License: This work is licensed under a Creative Commons Attribution 4.0 International License. Read Full License Version of Record: A version of this preprint was published at Journal of Inorganic and Organometallic Polymers and Materials on April 16th, 2021. See the published version at https://doi.org/10.1007/s10904-021-02000-6. A New Strategy of bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability ABSTRACT: Nonlinear optical materials possess high rank in fields of optics owing to their impacts, utilization and extended applications in industrial sector. Therefore, design of molecular systems with high nonlinear optical response along with high thermodynamic stability is a dire need of this era. Hence, the present study involves investigation of bi-alkali metal doped boron phosphide nanocages M2@B12P12 (M=Li, Na, K) in search of stable nonlinear optical materials. The investigation includes execution of geometrical and opto-electronic properties of complexes by means of density functional theory (DFT) computations. Bi-doped alkali metal atoms introduce excess of electrons in the host B12P12 nanocage. -
Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications
nanomaterials Review Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications Hocheon Yoo 1,2,† , Keun Heo 3,† , Md. Hasan Raza Ansari 1,2 and Seongjae Cho 1,2,* 1 Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; [email protected] (H.Y.); [email protected] (M.H.R.A.) 2 Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea 3 Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, Korea; [email protected] * Correspondence: [email protected] † These authors contributed equally to this work. Abstract: Two-dimensional materials have garnered interest from the perspectives of physics, materi- als, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are Citation: Yoo, H.; Heo, K.; added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used Ansari, M..H.R.; Cho, S. -
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency
Wide Band-Gap Semiconductor Based Power Electronics for Energy Efficiency Isik C. Kizilyalli, Eric P. Carlson, Daniel W. Cunningham, Joseph S. Manser, Yanzhi “Ann” Xu, Alan Y. Liu March 13, 2018 United States Department of Energy Washington, DC 20585 TABLE OF CONTENTS Abstract 2 Introduction 2 Technical Opportunity 2 Application Space 4 Evolution of ARPA-E’s Focused Programs in Power Electronics 6 Broad Exploration of Power Electronics Landscape - ADEPT 7 Solar Photovoltaics Applications – Solar ADEPT 10 Wide-Bandgap Materials and Devices – SWITCHES 11 Addressing Material Challenges - PNDIODES 16 System-Level Advances - CIRCUITS 18 Impacts 21 Conclusions 22 Appendix: ARPA-E Power Electronics Projects 23 ABSTRACT The U.S. Department of Energy’s Advanced Research Project Agency for Energy (ARPA-E) was established in 2009 to fund creative, out-of-the-box, transformational energy technologies that are too early for private-sector investment at make-or break points in their technology development cycle. Development of advanced power electronics with unprecedented functionality, efficiency, reliability, and reduced form factor are required in an increasingly electrified world economy. Fast switching power semiconductor devices are the key to increasing the efficiency and reducing the size of power electronic systems. Recent advances in wide band-gap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new genera- tion of power semiconductor devices that far exceed the performance of silicon-based devices. Past ARPA-E programs (ADEPT, Solar ADEPT, and SWITCHES) have enabled innovations throughout the power electronics value chain, especially in the area of WBG semiconductors. The two recently launched programs by ARPA-E (CIRCUITS and PNDIODES) continue to investigate the use of WBG semiconductors in power electronics. -
Designing Band Gap of Graphene by B and N Dopant Atoms
Designing band gap of graphene by B and N dopant atoms Pooja Rani and V.K. Jindal1 Department of Physics, Panjab University, Chandigarh-160014, India Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one atom of the dopant in 50 host atoms) to 12 % (six dopant atoms in 50 atoms host atoms) and also by considering different doping sites for the same concentration of substitutional doping. All the calculations have been performed by using VASP (Vienna Ab-initio Simulation Package) based on density functional theory. By B and N doping p-type and n-type doping is induced respectively in the graphene sheet. While the planar structure of the graphene sheet remains unaffected on doping, the electronic properties change from semimetal to semiconductor with increasing number of dopants. It has been observed that isomers formed differ significantly in the stability, bond length and band gap introduced. The band gap is maximum when dopants are placed at same sublattice points of graphene due to combined effect of symmetry breaking of sub lattices and the band gap is closed when dopants are placed at adjacent positions (alternate sublattice positions). These interesting results provide the possibility of tuning the band gap of graphene as required and its application in electronic devices such as replacements to Pt based catalysts in Polymer Electrolytic Fuel Cell (PEFC). INTRODUCTION Graphene is the name given to a single layer of graphite, made up of sp2 hybridized carbon atoms arranged in a honeycomb lattice, consisting of two interpenetrating triangular sub-lattices A and B (Fig. -
The Field-Effect Transistor (FET) in a Field-Effect Transistor, an Applied Voltage Is Used to Change the Conductivity of an Electron Or “Hole” Channel
The Field-Effect Transistor (FET) In a field-effect transistor, an applied voltage is used to change the conductivity of an electron or “hole” channel. To understand the operation of a FET, we first should understand just a little about the chemistry and physics of semiconductor devices. Let us consider, for simplicity, only silicon devices. Some Background (this section is Explore More!...will not be tested) Silicon (Si) is an element of the periodic table that contains 4 electrons in its “outer shell”. Pure silicon can arrange itself in a diamond cubic crystal structure (ref: http://en.wikipedia.org/wiki/Band_gap) where it shares its electrons with other Si atoms. The valance band is nominally full and the conduction band is nominally empty, thus resulting in an insulating material. Within this structure, Si forms an insulating material with a band gap energy of 1.11 electron volts (1.6e-19J, the amount of energy needed to move one electron across a one volt potential) separating the valance band from the conduction band. Figure 1: Electron band gap of an undoped (intrinsic) semiconductor. When doped (or infused) with an element that contains 5 electrons in its outer shell (say, for instance, nitrogen, N), this element will displace one silicon atom. Only using 4 of its 5 outer-shell electrons to form tight bonds with the neighboring Si atoms, nitrogen has one electron that is only loosely bound to the lattice. An electron may be more easily excited into the conduction band (the dopant provides a smaller band gap). With enough dopants (often 1 doping atom per 1 thousand to 1 billion Si atoms) and energy to excite electrons into the conduction band, the material becomes less like an insulator and more like a conductor.