DOCSLIB.ORG

Neutron Transmutation Doping of Silicon at Research Reactors

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Neutron Transmutation Doping of Silicon at Research Reactors Silicon at Research Silicon Reactors Neutron Transmutation Doping of Doping Neutron Transmutation IAEA-TECDOC-1681 IAEA-TECDOC-1681 n NEUTRON TRANSMUTATION DOPING OF SILICON AT RESEARCH REACTORS 130010–2 VIENNA ISSN 1011–4289 ISBN 978–92–0– INTERNATIONAL ATOMIC AGENCY ENERGY ATOMIC INTERNATIONAL Neutron Transmutation Doping of Silicon at Research Reactors The following States are Members of the International Atomic Energy Agency: AFGHANISTAN GHANA NIGERIA ALBANIA GREECE NORWAY ALGERIA GUATEMALA OMAN ANGOLA HAITI PAKISTAN ARGENTINA HOLY SEE PALAU ARMENIA HONDURAS PANAMA AUSTRALIA HUNGARY PAPUA NEW GUINEA AUSTRIA ICELAND PARAGUAY AZERBAIJAN INDIA PERU BAHRAIN INDONESIA PHILIPPINES BANGLADESH IRAN, ISLAMIC REPUBLIC OF POLAND BELARUS IRAQ PORTUGAL IRELAND BELGIUM QATAR ISRAEL BELIZE REPUBLIC OF MOLDOVA BENIN ITALY ROMANIA BOLIVIA JAMAICA RUSSIAN FEDERATION BOSNIA AND HERZEGOVINA JAPAN SAUDI ARABIA BOTSWANA JORDAN SENEGAL BRAZIL KAZAKHSTAN SERBIA BULGARIA KENYA SEYCHELLES BURKINA FASO KOREA, REPUBLIC OF SIERRA LEONE BURUNDI KUWAIT SINGAPORE CAMBODIA KYRGYZSTAN CAMEROON LAO PEOPLES DEMOCRATIC SLOVAKIA CANADA REPUBLIC SLOVENIA CENTRAL AFRICAN LATVIA SOUTH AFRICA REPUBLIC LEBANON SPAIN CHAD LESOTHO SRI LANKA CHILE LIBERIA SUDAN CHINA LIBYA SWEDEN COLOMBIA LIECHTENSTEIN SWITZERLAND CONGO LITHUANIA SYRIAN ARAB REPUBLIC COSTA RICA LUXEMBOURG TAJIKISTAN CÔTE DIVOIRE MADAGASCAR THAILAND CROATIA MALAWI THE FORMER YUGOSLAV CUBA MALAYSIA REPUBLIC OF MACEDONIA CYPRUS MALI TUNISIA CZECH REPUBLIC MALTA TURKEY DEMOCRATIC REPUBLIC MARSHALL ISLANDS UGANDA OF THE CONGO MAURITANIA UKRAINE DENMARK MAURITIUS UNITED ARAB EMIRATES DOMINICA MEXICO UNITED KINGDOM OF DOMINICAN REPUBLIC MONACO GREAT BRITAIN AND ECUADOR MONGOLIA NORTHERN IRELAND EGYPT MONTENEGRO UNITED REPUBLIC EL SALVADOR MOROCCO OF TANZANIA ERITREA MOZAMBIQUE UNITED STATES OF AMERICA ESTONIA MYANMAR URUGUAY ETHIOPIA NAMIBIA UZBEKISTAN FINLAND NEPAL VENEZUELA FRANCE NETHERLANDS VIETNAM GABON NEW ZEALAND YEMEN GEORGIA NICARAGUA ZAMBIA GERMANY NIGER ZIMBABWE The Agency’s Statute was approved on 23 October 1956 by the Conference on the Statute of the IAEA held at United Nations Headquarters, New York; it entered into force on 29 July 1957. The Headquarters of the Agency are situated in Vienna. Its principal objective is “to accelerate and enlarge the contribution of atomic energy to peace, health and prosperity throughout the world’’. IAEA-TECDOC-1681 NEUTRON TRANSMUTATION DOPING OF SILICON AT RESEARCH REACTORS INTERNATIONAL ATOMIC ENERGY AGENCY VIENNA, 2012 COPYRIGHT NOTICE All IAEA scientific and technical publications are protected by the terms of the Universal Copyright Convention as adopted in 1952 (Berne) and as revised in 1972 (Paris). The copyright has since been extended by the World Intellectual Property Organization (Geneva) to include electronic and virtual intellectual property. Permission to use whole or parts of texts contained in IAEA publications in printed or electronic form must be obtained and is usually subject to royalty agreements. Proposals for non-commercial reproductions and translations are welcomed and considered on a case-by-case basis. Enquiries should be addressed to the IAEA Publishing Section at: Marketing and Sales Unit, Publishing Section International Atomic Energy Agency Vienna International Centre PO Box 100 1400 Vienna, Austria fax: +43 1 2600 29302 tel.: +43 1 2600 22417 email: [email protected] http://www.iaea.org/books For further information on this publication, please contact: Physics Section International Atomic Energy Agency Vienna International Centre PO Box 100 1400 Vienna, Austria email: [email protected] © IAEA, 2012 Printed by the IAEA in Austria May 2012 IAEA Library Cataloguing in Publication Data Neutron transmutation doping of silicon at research reactors. – Vienna : International Atomic Energy Agency, 2012. p. ; 30 cm. – (IAEA-TECDOC series, ISSN 1011-4289 ; no. 1681) ISBN 978-92-0-130010-2 Includes bibliographical references. 1. Nuclear reactors – Research. 2. Neutron transmutation doping of semiconductors. 3. Silicon. I. International Atomic Energy Agency. II. Series. IAEAL 12-00743 FOREWORD The IAEA has for many years been conducting several missions to its Member States in order to assist them in ensuring and enhancing the performance of their neutron irradiation facilities. One area that can serve as a significant source for commerce and cooperation for these facilities is the irradiation of materials for added value, including the production of semiconductor material and gemstone colouration through neutron bombardment and transmutation, a process in which research reactors (RRs) possess prevalence over chemical techniques with regard to uniformity and enhanced electro-conductivity. In the Asia-Pacific region in particular, its research reactors are uniquely positioned to gain substantially through implementing demanding standards and promoting their burgeoning irradiation and processing capacity to the robust electronics industry and gemstone dealers. In order to gather the region’s leading producers and interested research reactor staff, the IAEA sponsored under a Regional Cooperative Agreement (RCA) the project RAS4026, ‘Adding Value to Materials through Irradiation with Neutrons,’ which concluded in 2010. The participating Member States were Bangladesh, China, India, Indonesia, the Republic of Korea, Pakistan, Thailand and Vietnam, and the project’s objectives were: — To expand utilization of RRs in the region with a specific focus on neutron irradiation of materials to increase their material value and thereby generate additional revenue for the utility; — To gather valuable information to improve the design and capability of such irradiation activities in new research reactors being planned by some Member States in the region. Within the eight participating Member States are eight operational research reactors already practicing neutron transmutation techniques on various materials, and 33 research reactors overall of a wide spectrum in terms of design, power rating and age. Also, each is at a different stage in the management of its irradiation facilities, making the exchange of experiences very important to achieving safe and effective practices as well as optimized production in collaboration with end users and industrial partners. Among the several research reactor utilization fields in the region that need information exchange, silicon doping, gem colouration and membrane production activities have not been collaboratively organized so far, but Member States assert high interest because such technologies are growing more important, especially regarding the semiconductors necessary for a rapidly advancing electronics sector. This report is the culmination of the project, and its purpose is to relate guidance on the preparation, design, execution and quality control of neutron transmutation doping (NTD) for silicon in a single document. The publication also contains a detailed history of techniques used at research reactors over the past 50 years and guidelines for quality design and operation of a Member State’s irradiation facilities. In addition, an extensive database containing information on experiences world-wide and existing capabilities in using neutron irradiation for the increase of material value has been included for assessing reactor capacity for providing irradiation services. Ultimately, the report is intended to improve research reactor utilization by promulgating the best practices in use today and the quality control demanded by industrial partnership in the field of neutron irradiation services. The IAEA officers responsible for this publication were D. Ridikas of the Division of Physical and Chemical Sciences and N.D. Peld of the Division of Nuclear Fuel Cycle and Waste Technology. EDITORIAL NOTE The use of particular designations of countries or territories does not imply any judgement by the publisher, the IAEA, as to the legal status of such countries or territories, of their authorities and institutions or of the delimitation of their boundaries. The mention of names of specific companies or products (whether or not indicated as registered) does not imply any intention to infringe proprietary rights, nor should it be construed as an endorsement or recommendation on the part of the IAEA. CONTENTS 1. INTRODUCTION ......................................................................................................... 1 1.1. Background ......................................................................................................... 1 1.2. Purpose and scope ............................................................................................... 1 1.3. Structure .............................................................................................................. 2 2. WHAT IS NTD? ........................................................................................................... 2 2.1. Definition of NTD ............................................................................................... 2 2.2. Targets of NTD ................................................................................................... 2 3. WHY IS NTD NEEDED? ............................................................................................. 4 3.1. Doping of a semiconductor ................................................................................. 4 3.2. Crystal growth ....................................................................................................
Load more

Recommended publications
  • Amorphous Silica Containers for Germanium Ultrapurification by Zone Refining O
    View metadata, citation and similar papers at core.ac.uk brought to you by CORE provided by Siberian Federal University Digital Repository ISSN 0020-1685, Inorganic Materials, 2016, Vol. 52, No. 11, pp. 1091–1095. © Pleiades Publishing, Ltd., 2016. Original Russian Text © O.I. Podkopaev, A.F. Shimanskii, T.V. Kulakovskaya, A.N. Gorodishcheva, N.O. Golubovskaya, 2016, published in Neorganicheskie Materialy, 2016, Vol. 52, No. 11, pp. 1163–1167. Amorphous Silica Containers for Germanium Ultrapurification by Zone Refining O. I. Podkopaeva, *, A. F. Shimanskiib, **, T. V. Kulakovskayaa, A. N. Gorodishchevac, ***, and N. O. Golubovskayab aOJSC Germanium, Transportnyi proezd 1, Krasnoyarsk, 660027 Russia bSiberian Federal University, Svobodnyi pr. 79, Krasnoyarsk, 660047 Russia cReshetnev Siberian State Aerospace University, pr. im. gazety Krasnoyarskii rabochii 31, Krasnoyarsk, 660014 Russia *e-mail: [email protected] **e-mail: [email protected] ***e-mail: [email protected] Received March 2, 2016 Abstract—We have studied the wetting behavior of molten germanium on silica ceramics and amorphous sil- ica coatings in vacuum at a pressure of 1 Pa and a temperature of 1273 K. The results demonstrate that the wetting of rough surfaces of ceramic samples and coatings by liquid Ge is significantly poorer than that of the smooth surface of quartz glass. The contact angle of polished glass is ~100°, and that of the ceramics and coatings increases from 112° to 137° as the total impurity content of the material decreases from 0.120 to 1 × 10–3 wt %. Using experimental contact angle data, we calculated the work of adhesion of molten Ge to the materials studied.
    [Show full text]
  • Refining Crude Oil
    REFINING CRUDE OIL New Zealand buys crude oil from overseas, as well as drilling for some oil locally. This oil is a mixture of many hydrocarbons that has to be refined before it can be used for fuel. All crude oil in New Zealand is refined by The New Zealand Refining Company at their Marsden Point refinery where it is converted to petrol, diesel, kerosene, aviation fuel, bitumen, refinery gas (which fuels the refinery) and sulfur. The refining process depends on the chemical processes of distillation (separating liquids by their different boiling points) and catalysis (which speeds up reaction rates), and uses the principles of chemical equilibria. Chemical equilibrium exists when the reactants in a reaction are producing products, but those products are being recombined again into reactants. By altering the reaction conditions the amount of either products or reactants can be increased. Refining is carried out in three main steps. Step 1 - Separation The oil is separated into its constituents by distillation, and some of these components (such as the refinery gas) are further separated with chemical reactions and by using solvents which dissolve one component of a mixture significantly better than another. Step 2 - Conversion The various hydrocarbons produced are then chemically altered to make them more suitable for their intended purpose. For example, naphthas are "reformed" from paraffins and naphthenes into aromatics. These reactions often use catalysis, and so sulfur is removed from the hydrocarbons before they are reacted, as it would 'poison' the catalysts used. The chemical equilibria are also manipulated to ensure a maximum yield of the desired product.
    [Show full text]
  • Modeling Techniques for Multijunction Solar Cells Meghan N
    NUSOD 2018 Modeling Techniques for Multijunction Solar Cells Meghan N. Beattie Karin Hinzer Matthew M. Wilkins SUNLAB, Centre for Research in SUNLAB, Centre for Research in SUNLAB, Centre for Research in Photonics Photonics Photonics University of Ottawa University of Ottawa University of Ottawa Ottawa, Canada Ottawa, Canada Ottawa, Canada [email protected] Christopher E. Valdivia SUNLAB, Centre for Research in Photonics University of Ottawa Ottawa, Canada Abstract—Multi-junction solar cell efficiencies far exceed density of defects at the interface [4]. Many of these defects those attainable with silicon photovoltaics. Recently, this propagate towards the surface, resulting in threading technology has been applied to photonic power converters with dislocations that inhibit minority carrier collection [3] In this conversion efficiencies higher than 65%. These devices operate research, we are investigating the use of a voided germanium well in part because of luminescent coupling that occurs in the interface layer to intercept dislocations before they reach the multijunction device. We present modeling results to explain surface, enabling epitaxial growth of high quality Ge, IV how this boosts device efficiencies by approximately 70 mV per (e.g. SiGeSn), and III-V (e.g. InGaAs, InGaP) junction in GaAs devices. Luminescent coupling also increases semiconductors on Si substrates. efficiency in devices with four more junctions, however, the high cost of materials remains a barrier to their widespread By modelling multijunction solar cell designs on Si use. Substantial cost reduction could be achieved by replacing substrates, we investigate the impact of threading the germanium substrate with a less expensive alternative: dislocations on device performance. With highly doped Si, silicon.
    [Show full text]
  • Efficient Er/O Doped Silicon Light-Emitting Diodes at Communication Wavelength by Deep Cooling
    Efficient Er/O Doped Silicon Light-Emitting Diodes at Communication Wavelength by Deep Cooling Huimin Wen1,#, Jiajing He1,#, Jin Hong2,#, Fangyu Yue2* & Yaping Dan1* 1University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, 200240, China. 2Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200241, China. #These authors contributed equally * To whom correspondence should be addressed: [email protected], [email protected] Abstract A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the aggregation of erbium ions that are efficient non-radiative centers, formed during the standard rapid thermal treatment. Here, we apply a deep cooling process following the high- temperature annealing to suppress the aggregation of erbium ions by flushing with Helium gas cooled in liquid nitrogen. The resultant light emitting efficiency is increased to a record 14% at room temperature, two orders of magnitude higher than the sample treated by the standard rapid thermal annealing. The deep-cooling-processed Si samples were further made into light-emitting diodes. Bright electroluminescence with a spectral peak at 1.54 µm from the silicon-based diodes was also observed at room temperature. With these results, it is promising to develop efficient silicon lasers at communication wavelength for the monolithically integrated silicon photonics. The monolithic integration of fiber optics with complementary metal-oxide- semiconductor (CMOS) integrated circuits will significantly speed up the computing and data transmission of current communication networks.1-3 This technology requires efficient silicon-based lasers at communication wavelengths.4, 5 Unfortunately, silicon is an indirect bandgap semiconductor and cannot emit light at communication wavelengths.
    [Show full text]
  • A New Strategy of Bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability
    A New Strategy of bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability Rimsha Baloach University of Education Khurshid Ayub University of Education Tariq Mahmood University of Education Anila Asif University of Education Sobia Tabassum University of Education Mazhar Amjad Gilani ( [email protected] ) University of Education Original Research Full Papers Keywords: Boron phosphide (B12P12), Bi-alkali metal doping, Nonlinear optical response (NLO), Density functional theory Posted Date: February 11th, 2021 DOI: https://doi.org/10.21203/rs.3.rs-207373/v1 License: This work is licensed under a Creative Commons Attribution 4.0 International License. Read Full License Version of Record: A version of this preprint was published at Journal of Inorganic and Organometallic Polymers and Materials on April 16th, 2021. See the published version at https://doi.org/10.1007/s10904-021-02000-6. A New Strategy of bi-Alkali Metal Doping to Design Boron Phosphide Nanocages of High Nonlinear Optical Response with Better Thermodynamic Stability ABSTRACT: Nonlinear optical materials possess high rank in fields of optics owing to their impacts, utilization and extended applications in industrial sector. Therefore, design of molecular systems with high nonlinear optical response along with high thermodynamic stability is a dire need of this era. Hence, the present study involves investigation of bi-alkali metal doped boron phosphide nanocages M2@B12P12 (M=Li, Na, K) in search of stable nonlinear optical materials. The investigation includes execution of geometrical and opto-electronic properties of complexes by means of density functional theory (DFT) computations. Bi-doped alkali metal atoms introduce excess of electrons in the host B12P12 nanocage.
    [Show full text]
  • Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications
    nanomaterials Review Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications Hocheon Yoo 1,2,† , Keun Heo 3,† , Md. Hasan Raza Ansari 1,2 and Seongjae Cho 1,2,* 1 Department of Electronic Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea; [email protected] (H.Y.); [email protected] (M.H.R.A.) 2 Graduate School of IT Convergence Engineering, Gachon University, 1342 Seongnamdaero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, Korea 3 Department of Semiconductor Science & Technology, Jeonbuk National University, Jeonju-si, Jeollabuk-do 54896, Korea; [email protected] * Correspondence: [email protected] † These authors contributed equally to this work. Abstract: Two-dimensional materials have garnered interest from the perspectives of physics, materi- als, and applied electronics owing to their outstanding physical and chemical properties. Advances in exfoliation and synthesis technologies have enabled preparation and electrical characterization of various atomically thin films of semiconductor transition metal dichalcogenides (TMDs). Their two-dimensional structures and electromagnetic spectra coupled to bandgaps in the visible region indicate their suitability for digital electronics and optoelectronics. To further expand the potential applications of these two-dimensional semiconductor materials, technologies capable of precisely controlling the electrical properties of the material are essential. Doping has been traditionally used to effectively change the electrical and electronic properties of materials through relatively simple processes. To change the electrical properties, substances that can donate or remove electrons are Citation: Yoo, H.; Heo, K.; added. Doping of atomically thin two-dimensional semiconductor materials is similar to that used Ansari, M..H.R.; Cho, S.
    [Show full text]
  • Designing Band Gap of Graphene by B and N Dopant Atoms
    Designing band gap of graphene by B and N dopant atoms Pooja Rani and V.K. Jindal1 Department of Physics, Panjab University, Chandigarh-160014, India Ab-initio calculations have been performed to study the geometry and electronic structure of boron (B) and nitrogen (N) doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 2 % (one atom of the dopant in 50 host atoms) to 12 % (six dopant atoms in 50 atoms host atoms) and also by considering different doping sites for the same concentration of substitutional doping. All the calculations have been performed by using VASP (Vienna Ab-initio Simulation Package) based on density functional theory. By B and N doping p-type and n-type doping is induced respectively in the graphene sheet. While the planar structure of the graphene sheet remains unaffected on doping, the electronic properties change from semimetal to semiconductor with increasing number of dopants. It has been observed that isomers formed differ significantly in the stability, bond length and band gap introduced. The band gap is maximum when dopants are placed at same sublattice points of graphene due to combined effect of symmetry breaking of sub lattices and the band gap is closed when dopants are placed at adjacent positions (alternate sublattice positions). These interesting results provide the possibility of tuning the band gap of graphene as required and its application in electronic devices such as replacements to Pt based catalysts in Polymer Electrolytic Fuel Cell (PEFC). INTRODUCTION Graphene is the name given to a single layer of graphite, made up of sp2 hybridized carbon atoms arranged in a honeycomb lattice, consisting of two interpenetrating triangular sub-lattices A and B (Fig.
    [Show full text]
  • PETROLEUM: CHEMISTRY, REFINING, FUELS and PETROCHEMICALS - Petroleum: Chemistry, Refining, Fuels and Petrochemicals - Product Treating - James G
    PETROLEUM: CHEMISTRY, REFINING, FUELS AND PETROCHEMICALS - Petroleum: Chemistry, Refining, Fuels and Petrochemicals - Product Treating - James G. Speight PETROLEUM: CHEMISTRY, REFINING, FUELS AND PETROCHEMICALS - PRODUCT TREATING James G. Speight 2476 Overland Road,Laramie, WY 82070-4808, USA Keywords: Caustic treating, Dualayer distillate process, Dualayer gasoline process, electrolytic mercaptan process, Ferrocyanide process, lye treatment, Mercapsol process, polysulfide treatment, Sodasol process, Solutizer process, steam regenerative caustic treatment, Unisol process, acid treating, Nalfining process, sulfuric acid treatment, clay and related processes, alkylation effluent treatment, Arosorb process, bauxite treatment, continuous contact filtration process, cyclic adsorption process, gray clay treatment, percolation filtration process, thermofor continuous percolation process, oxidative treating processes, bender process, copper sweetening process, doctor process, hypochlorite sweetening process, Merox process, solvent treating, deasphalting, solvent refining, dewaxing, gas treating, acid gas removal, gas sweetening Contents 1. Introduction 2. Caustic Processes 2.1. Dualayer Distillate Process 2.2. Dualayer Gasoline Process 2.3. Electrolytic Mercaptan Process 2.4. Ferrocyanide Process 2.5. Lye Treatment 2.6. Mercapsol Process 2.7. Polysulfide Treatment 2.8. Sodasol Process 2.9. Solutizer Process 2.10. Steam Regenerative Caustic Treatment 2.11. Unisol Process 3. Acid Processes 3.1. Nalfining Process 3.2. Sulfuric Acid Treatment 4. Clay
    [Show full text]
  • Environmental, Health, and Safety Guidelines for Petroleum Refining
    ENVIRONMENTAL, HEALTH, AND SAFETY GUIDELINES PETROLEUM REFINING November 17, 2016 ENVIRONMENTAL, HEALTH, AND SAFETY GUIDELINES FOR PETROLEUM REFINING INTRODUCTION 1. The Environmental, Health, and Safety (EHS) Guidelines are technical reference documents with general and industry-specific examples of Good International Industry Practice (GIIP).1 When one or more members of the World Bank Group are involved in a project, these EHS Guidelines are applied as required by their respective policies and standards. These industry sector EHS Guidelines are designed to be used together with the General EHS Guidelines document, which provides guidance to users on common EHS issues potentially applicable to all industry sectors. For complex projects, use of multiple industry sector guidelines may be necessary. A complete list of industry sector guidelines can be found at: www.ifc.org/ehsguidelines. 2. The EHS Guidelines contain the performance levels and measures that are generally considered to be achievable in new facilities by existing technology at reasonable costs. Application of the EHS Guidelines to existing facilities may involve the establishment of site-specific targets, with an appropriate timetable for achieving them. 3. The applicability of the EHS Guidelines should be tailored to the hazards and risks established for each project on the basis of the results of an environmental assessment in which site-specific variables— such as host country context, assimilative capacity of the environment, and other project factors—are taken into account. The applicability of specific technical recommendations should be based on the professional opinion of qualified and experienced persons. 4. When host country regulations differ from the levels and measures presented in the EHS Guidelines, projects are expected to achieve whichever is more stringent.
    [Show full text]
  • Honeywell in Refining
    Honeywell Process Solutions HPS INTRODUCTION, MARKET OVERVIEW AND TECHNOLOGY UPDATE P.G.Millette May-2017 Honeywell Oil & Gas Technologies Symposium – Cairo, Alexandria Honeywell Confidential - © 2017 by Honeywell International Inc. All rights reserved. Agenda • Honeywell Process Solutions Overview • HPS activity • Market update & Trends • Technology Trends • Honeywell Technology update – summary - Innovation - LEAP - Joint HPS-UOP Solutions - IIoT Honeywell Confidential - © 2017 by Honeywell International Inc. All rights reserved. HPS - Serving Process Industries Refining & Petrochemical Oil & Gas & Midstream Our solutions are installed at more than Chemicals Power Generation 10,000 sites And renewables around the world Minerals, Metals & Mining Pulp & Paper Specialty / Batch Chemicals, Pharmaceuticals, Food, Water Honeywell Confidential - © 2017 by Honeywell International Inc. All rights reserved. HPS Egypt activity - examples EXAMPLE ALEXANDRIA & WEST DESERT CUSTOMERS ALEXANDRIA ALEXANDRIA SIDI KERIR AMREYA PETROLEUM CO. MINERAL OIL PETROCHEM CO. PETROLEUM (APC) (AMOC) (SIDPEC) REFINING CO. (Refining) (Refining) (Petrochemical) (Refining) EGYPTIAN MISR KHALDA ABU QIR POWER MIDOR PETROCHEM CO. PETROLEUM CO. PETROLEUM CO. STATION Refinery (EPC) (MPC) (KPC) (Power) (Refiining) (Petrochemical) (Refining) (Up Stream) EXAMPLE CAIRO & EAST & SOUTH OF EGYPT CUSTOMERS SUEZ MEDITOR. ABU SULTAN PETROBELL PIPE LINE CO. IDEAL STANDARD POWER STATION (Up Stream) (Pipe line) (Ceramic Manufacturing) (Power) (ENPPI) (SUMED) PROCTER ORIENTAL SUGAR INTERATED
    [Show full text]
  • Doping of Semiconductors N Doping This Involves Substituting Si by Neighboring Elements That Contribute Excess Electrons
    Materials 100A, Class 12, Electrical Properties etc Ram Seshadri MRL 2031, x6129 [email protected]; http://www.mrl.ucsb.edu/∼seshadri/teach.html Doping of semiconductors n doping This involves substituting Si by neighboring elements that contribute excess electrons. For example, small amounts of P or As can substitute Si. Since P/As have 5 valence electrons, they behave like Si plus an extra electron. This extra electron contributes to electrical conductivity, and with a sufficiently large number of such dopant atoms, the material can displays metallic conductivity. With smaller amounts, one has extrinsic n-type semiconduction. Rather than n and p being equal, the n electrons from the donor usually totally outweigh the intrinsic n and p type carriers so that: σ ∼ n|e|µe The donor levels created by substituting Si by P or As lie just below the bottom of the conduction band. Thermal energy is usually sufficient to promote the donor electrons into the conduction band. electron from P Energy CB electron pair Donor levels VB p doping This involves substituting Si by neighboring atom that has one less electron than Si, for example, by B or Al. The substituent atom then creates a “hole” around it, that can hop from one site to another. The hopping of a hole in one direction corresponds to the hopping of an electron in the opposite direction. Once again, the dominant conduction process is because of the dopant. σ ∼ p|e|µh hole from Al Energy CB electron pair Acceptor levels VB T dependence of the carrier concentration The expression: 1 Materials 100A, Class 12, Electrical Properties etc Eg ρ = ρ0 exp( ) 2kBT can inverted and written in terms of the conductivity −Eg σ = σ0 exp( ) 2kBT Now σ = n|e|µe or σ = p|e|µh.
    [Show full text]
  • Ultrahigh Doping of Graphene Using Flame-Deposited Moo 3
    1592 IEEE ELECTRON DEVICE LETTERS, VOL. 41, NO. 10, OCTOBER 2020 Ultrahigh Doping of Graphene Using Flame-Deposited MoO3 Sam Vaziri , Member, IEEE, Victoria Chen, Lili Cai, Yue Jiang , Michelle E. Chen, Ryan W. Grady, Xiaolin Zheng, and Eric Pop , Senior Member, IEEE Abstract— The expected high performance of graphene- result, applying conventional semiconductor doping methods based electronics is often hindered by lack of adequate (e.g. substituting C atoms with dopants) is very challenging doping, which causes low carrier density and large sheet for graphene and other 2D materials. resistance. Many reported graphene doping schemes also suffer from instability or incompatibility with existing semi- A more promising route to control the doping of graphene conductor processing. Here we report ultrahigh and stable and other 2D materials is to introduce charge carriers from p-type doping up to ∼7 × 1013 cm−2 (∼2 × 1021 cm−3) of the outside, either with a field-effect (electrostatically or with monolayer graphene grown by chemical vapor deposition. external charge dipoles) or by external dopants (similar to This is achieved by direct polycrystalline MoO3 growth on modulation doping in conventional semiconductors) [10]–[13]. graphene using a rapid flame synthesis technique. With this approach, the metal-graphene contact resistance for For example, charge transfer from external metal-oxide layers holes is reduced to ∼200 · μm. We also demonstrate is one of the most promising mechanisms, being compati- that flame-deposited MoO3 provides over 5× higher doping ble with semiconductor device processing while minimally of graphene, as well as superior thermal and long-term degrading the electronic properties of graphene [14], [15].
    [Show full text]