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MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ Material removal methods LIGA technique Micromachining Table of Contents, Slide2 of Table Microfabrication andMicromachiningMethods Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Control Laboratory Engineering Control HELSINKI UNIVERSITY TECHNOLOGY OF Soft Soft Dry Electron beammachining Plasma beammachining Diamond milling Micro Ultrasonicmachining Micro electro-dischargemachining Ion beammilling micromachining laser Excimer Bulk micromachining Introduction to MicroSystem Technology ™ Material depositionmethods Ö Ö Ö Ö Ö deposition Localized electrochemical deposition Laser-assisted chemicalvapor Micro stereolithography Micromolding M icrofabrication Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Quan Zhou

Lecture 2

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ Ceramics Silicon Table of Contents, Slide4 of Table Contents, Slide3 of Table Ö Ö Ö Ö Micromolding lithography Soft Surface polymermicromachining Thick resistlithography – – – – PMMA, PC, PS, COC, PP PMMA, PC,PS,COC, PDMS Conductive polymers depositable photoresists, Polyimide, Parylene, Electro- P 100 Ma- AZ9260, AZ4562, SU-8, PMMA, Properties ofSilicon ™ ™ ™ Active materials: Metal mechanical properties mechanical Have thesametime goodelectricand Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Active polymers Magneto/electrostrictive materials EMFi MSM NiTi) (e.g. SMA Piezoelectric Ni Ti, Al, Au, Pt, Low cost,high reliability onsinglechip Integrated MEMS actuator Can beusedforsensor and micromachining. properties forsurface excellent physicalandchemical have Some siliconcompounds, density low due toits than steel stiffer steel of comparable tothat is silicon the elasticityof – – silicon dioxidesilicon nitride silicon Materials

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ ™ ™ Methods Purpose Etching Lithography Layer techniques Table of Contents, Slide6 of Table Contents, Slide5 of Table Ö Ö Ö Ö Thick film techniques Deposition fromtheliquidphase Thin filmtechniques range Produce andstructurelayersof materials inthemicroandnanometer Silicon FabricationTechniques Layer Techniques Surface micromachining Surface Surface micromachining Surface Bulk micromachining Bulk micromachining

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide8 of Table Contents, Slide7 of Table Deposition fromtheLiquidPhase Thin FilmTechniques ™ ™ ™ ™ ™ ™ Deposition processes structuring thechip For generation of function layerand ofa fewThickness nm to a few Spin-coating method Spin-coating Catalytic method Galvanic techniques Ö Ö Ö Ö Ö Ö Ö Ö Chemical layerdeposition Physical layerdeposition Thermal deposition sdfrptsniiecoating Used forphtosensitive ofmetals allow onlythedeposition Used forLIGA high aspectratio can depositvarious kindofmetal – – – – Plasma Enhanced CVD(PECVD) chemical vapor deposition (CVD) sputtering process vapor deposition Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY µ

m

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ Doping methodsusedinMST so thatnorpconduc areintroducedtoa Doping atoms Table of Contents, Slide10 of Table Contents, Slide9 of Table Ö Ö Ö Ö Diffusion methods stop barrier such aswear andcorrosion,asetching Improve mechanicalproperties Determine theelectric properties High-Aspect-Ratio – – – – doping profile only on the the surface on only profile doping in afurnace Process boron, phosphorus the ion canpenetrateup tofew micrometers ting layersareformed. ting silicon substrate in a defined way substrateinadefined silicon Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

Doping

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ ™ Add Oxide Layer to Continue Add OxideLayer Feature SuccessfullyCreated Remove OxideLayer Implanted Successfully Dopant toDopant Expose Table of Contents, Slide12 of Table Contents, Slide11 of Table ™ ™ Elements stage. processing subsequent forthe Used forpreparing thesubstrate of a Diffusion Doping Ö Ö Ö Resist Mask Light source – – – – – positive and negative resist another deposition layer µ sensitive to the light source, about 1 transparent substrate (glass). a chromium pattern on a light- process of 250-450 forsilicon used nm is wavelength a with (UV)light Ultraviolet light, X-ray, electron or ion beams m thick, applied on the silicon waferor appliedonthesilicon m thick, Lithography

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide14 of Table Contents, Slide13 of Table ™ ™ ™ ™ ™ Ready forExposure Pattern Mask Select Layer Add Photoresist Add OxideLayer SiliconSubstrate Select Three LithographyMethods Preparation ofSubstrate ™ ™ ™ Projection lithography Projection Proximity lithography Contact lithography Ö Ö Ö Ö Ö Ö Ö expansive m resolution of0.5 10:1) lens (5:1- using areducing high resolution resolution islimitedto2 air gap20-50 damaged high mechanicalload,easily resolution 1 µ m or high or m µ m, reduced wear m, Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY µ

m

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ ™ Table of Contents, Slide16 of Table Contents, Slide15 of Table Expose toUltravioletLight Expose Remove UnhardenedPhotoresist Solvent toPhotoresist Expose Prepare forEtching is Hardened Photoresist Exposed Exposure ofthePhotoresist Patterning ofthePhotoresist

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ Remove HardenedPhotoresist Oxide Remove Exposed toHydrofluoricAcid Expose Table of Contents, Slide18 of Table Contents, Slide17 of Table Etching oftheOxideLayer More inLithography ™ ™ ™ ™ X-ray lithography methods Electro-optical Gray-tone lithography ratio Aspect Ö Ö Ö Ö Ö Ö Ö µ structure precision canbe0.2 small wavelength(1nm), time-consuming no maskneeded electron orionbeam a bypointwith “write” point raster-screen photomask 6-8 withspecialtechniques 1-2 usingUVlithography m.

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ the wafer andtherespec the wafer (unexposed exposed To removethe Table of Contents, Slide20 of Table Contents, Slide19 of Table Ö Ö Dry Etching Wet Etching Example: AMicrostructureMade using Gray-ToneLithography tive deposi Etching Techniques ted layers. ) areasofthephotoresistfrom

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ Two types (based on structure ofthe onstructure (based Two types Etching solution solution. intoanetchi substrate Dipping the Table of Contents, Slide22 of Table Contents, Slide21 of Table Ö Ö Ö Anisotropic etching Isotropic etching acidic oralkaline ng bath or spraying it with etching etching itwith ng bathorspraying ™ ™ ™ material or the etching solution) material ortheetching micromachining Used formanyapplications insurface all directions Attack thematerialat the sameratein amorphous orpolycrystalline ifthe materialEtching isisotropic is Ö Ö Ö Isotropic Etching than 2-3 suitable forcavitywidthsmaller not for deepforming, Limited The resistisundercut off edges cavitieswithrounded Formation of Wet Etching µ m.

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide24 of Table Contents, Slide23 of Table a) (110) silicon; b)(100)silicon. a) (110)silicon; Basic Structurescanbe Produced inSilicon Anisotropic Etching ™ ™ ™ ™ Resist Etching solution the crystal’sorientation isdependent The etchingon speed etched anisotropically siliconcanbe Single-crystal Ö Ö Ö Ö Ö Silicon nitride Silicon dioxide pyrocatechol). EDP (ethylenediamine NaOH KOH

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ carbon. contain fluorine,and chlorine, The most widelyusedgasmixtures of the most wet etchants. chemical arealsohigherthanthoseprocesses The etch ratesachieved inRIE crystal orientationpossible. make etchingindependentof the Reactive IonEtching(RIE)processes Table of Contents, Slide26 of Table Contents, Slide25 of Table Reactive IonEtching(RIE) ™ ™ ™ Combined physical/chemicaletching etching Chemical plasma etching sputter Physical etchingorionbeam Ö Ö Ö Ö Ö Ö Ö Ö Ö reactive ionbeametching:500nm/min 200nm/min reactive ionetching(RIE):20- nm/min speed: upto100 isotropic, selective using reactivegases nm/min speed: afew10 guaranteed anisotropic, selectivityisnon- using inertions atomic level “sand inthe blasting”technology Dry Etching

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide28 of Table Contents, Slide27 of Table Made bythePlasmaEtchingProcess Example: AluminumMicrostructures ™ ™ ™ Lift-Off Technique Normal solvent: aceton. metals. fromhard-to-etch layers conductive Suitable formakingelectrically pads onachip. formakingmetallic A techniqueused

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ aigItriia CapacitorStructure Making Interdigital Surface micromachining Bulk micromachining Table of Contents, Slide30 of Table Contents, Slide29 of Table Ö Ö Ö Ö Ö Ö ufc irmcnn wasbornin1985 Surface micromachning micrometers can makecomplicatedplanarstructurewith amaximumthicknessof few wafer or othersuitable substrate. build upthestructureinlayersofthinfilmson the structureof the silicon The termbulk in1982 micromachining structuring in3D, theentiresubstrate canbe used. the desiredresult. form microstructure byetching away thebulkof thesilicon wafer toarchive Bulk andSurfaceMicromachining Example: Lift-offTechnologyfor

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide32 of Table Contents, Slide31 of Table Etch-stop Techniques:Boron Bulk Micromachining ™ ™ ™ ™ ™ ™ Limitation: to form complex3Dstructures multiplewafer toconnect Possibility Crystal orientationplaysabigrole Developed in60’s 20 hours. as far20 m over periodsof15to Boron canbedrivenintothesilicon atoms germanium, phosphorus orboron substratewith Doping thesilicon Ö Ö cylindrical cavities orcolumns,etc. cannot makesimplecircular, crystal isnotvariable, structureofthesilicon the lattice Implantation

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide34 of Table Contents, Slide33 of Table Electrochemical Technique Surface Micromachining Etch-stop Techniques: ™ ™ ™ Features Base materials Basic methods Ö Ö Ö Ö Ö with a height about20 with aheight make complex,3Dmicrostructure thickness innmrange can makemicrostructurewith metals, polycrystallinesilicon selective etching thin layertechnology Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY µ

m.

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ Operation Voltage: 35V Rotation speed: 15,000 rpm Distance betweenthe rotor and the stator: 1-2 Diameter: 100 Table of Contents, Slide36 of Table Contents, Slide35 of Table irmtr(SurfaceMicromachining) Micromotor Application Example:Electrostatic Comb-like, Free-standingMicrostructure µ m Example for Surface Micromachining: Surface Example for µ m Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY 0.8 Beam size: µ m W, 2.0 W, µ m

H

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ Features Developed attheRese German acronymfor(LIthograpie, Table of Contents, Slide38 of Table Contents, Slide37 of Table Ö Ö Ö Ö high production cost high production microsystem hybrid can useplastics,metals, ceramics ortheircombinations - allow 3D microstructure of severalhundred ,moldingprocess lithography, electroplating Alignment Device(BulkMicromachining) Application Example:OpticalFiber arch Center Karlsruhe intheearly80’s arch CenterKarlsruhe Galvanoformung, Abformung), Galvanoformung, LIGA Technology µ m high and laterally in0.2 highandlaterally m Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY µ

m

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide40 of Table Contents, Slide39 of Table Steps ofLIGAProcess ™ ™ ™ ™ be upto severalthousands ofdollars The productioncostof a maskcould thickness Relation between maskandstructure Mask foil Mask material Ö Ö Ö Mask Fabrication µ the goldlayershouldbeabout10 nm, with X-raywavelengthof0.225 to makea400 beryllium X-ray transparent titanium, material: X-ray absorber: gold,tantalum m µ

m thickstructure

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide42 of Table Contents, Slide41 of Table ™ ™ ™ ™ ™ X-ray Lithography nickel-based electrolytes nickel-based Can bebestcarriedoutbyusing be madein LIGA process. can alloys andnickel-iron nickel-cobalt Microstructure ofnickel,coppergold, conductive electrically The substrate material mustbe Expose time Expose X-ray Ö Ö Ö Ö energy doseofradiation exposed for8hourstoahigh 350 3D structureupto1mm tobuild suitable deep penetration- parallelism (spread of0.2mrad) high energydensityand wavelengths 0.2-0.6nm Microgalvanics µ m PMMA resistmustbe PMMA m

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide44 of Table Contents, Slide43 of Table Example: of PMMA(LIGAProcess) ™ ™ Methods components To of mass production the Ö Ö Plastic Modeling Cylindrical reaction injection injection – – caprolactame. silicon and methacrylatene, materials: reactive resin based on orPMMA. like polyoxymethyleme materials: non-viscous thermoplast Thickness: 150 Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

lenses mode µ m

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide46 of Table Contents, Slide45 of Table Example: Sacrificial LIGA(SLIGA) Acceleration Components (LIGA) Technique Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Gap 3 Height 100 µ m µ

m

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide48 of Table Contents, Slide47 of Table Example: Example: irtrieImpeller Microturbine Micromotor and the rotor: 500nm and the axle Clearance betweenthe Height: 100 (SLIGA) Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY (SLIGA) φ size: impeller Nickel 260 µ µ m m, 150 µ

m H

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide50 of Table Contents, Slide49 of Table Microstructure withaCombDrive xml:Mcoup(LIGA) Example: Micropump Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

(LIGA)

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide52 of Table Contents, Slide51 of Table a) a nickel mold; b)the tertiary Example: Example: itbeFluidic A Bistable High PassOpticalFilter microstructure madeofPMMA. Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

(LIGA) (LIGA)

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ ™ Material removal methods LIGA technique Silicon Micromachining Excimer laser andorganicmaterials laser Excimer (excited dimer)laser The excimer Table of Contents, Slide54 of Table Contents, Slide53 of Table Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Microfabrication andMicromachiningMethods effects onorganicmaterials inultravioletrange Wavelength lasers lasers arereferredtoasexcimer rare gashalide material using diatomicmoleculeaslasing invented in1975 Dry etching Electron beammachining Plasma beammachining Diamond milling Micro Ultrasonicmachining Micro electro-dischargemachining Ion beammilling Excimer lasermicromachining Surface micromachining Bulk micromachining applications ineye surgery applications intensity ofthelaser andeffects – – – , polymers (compatible with chemicalbond energies) 157 nm, 193 nm, 248 nm, 308 nm, 353 nm N2, H2 ™ Material depositionmethods Ö Ö Ö Ö Ö Ö Electron beammachining Plasma beammachining Electroplating deposition Localized electrochemical Micro stereolithography deposition Laser-assisted chemicalvapor Excimer Laser

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ Be abletomakethick Anisotropic No resistlayer Apply ionbeamdirectlyont Table of Contents, Slide56 of Table Contents, Slide55 of Table microstructure (about100mm) o substrate throughamask o substrate ™ ™ ™ ™ ™ Structure canbemade removed Material isselectively a mask Shape ofthe structureiscontrolledby made Cuts ofhundredsbe ofmicronscan Remove material ateverypulse Ö Ö Ö Ion BeamMilling Micromachining tapered walls vertical walls anisotropic Excimer Laser

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Example: Table of Contents, Slide58 of Table Contents, Slide57 of Table dielectric fluid dielectric Microstructure CreatedusingIon tool electrode workpiece electrode Micro Electro-discharge ™ ™ ™ ™ ™ structure canbemade action remove material through erosive atlater80’s re-discovered first experiment at the endof 60’s machining “non-conventional” Ö Ö Ö Ö Ö Ö other complexshapes micro shafts micro holes 12,000 C upto 500,000/s frequency 180/s- 70:1 to tool wearration3:1 Machining Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

Milling

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP ™ ™ ™ ™ ™ Commercial microEDMmachine(1990s) (1994) pr withelectroforming, Combining 3D microEDM,smallest (1989) aspe Drilling ofdeepmicroholes, EDM-drilled holesforink-jetpr Table of Contents, Slide60 of Table Contents, Slide59 of Table electrodes f4.3mm electrodesf4.3mm (1991) inter nozzles,f1 History ofMicroEDM Benefits oftheMicro ct ratioof10:1forf50mmhole ocess for micronozzle fabrication fabrication micronozzle for ocess ™ ™ ™ ™ ™ ™ High aspectratio influence onthe EDM no directions have Crystallographic Easy tomakecomplex3Dstructure Flexible, idealfor prototypes little joboverhead Low installationcost 5-300mm (1985) Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

EDM

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide62 of Table Contents, Slide61 of Table Different Typesof ™ ™ ™ ahnbematerial machinable wire EDM EDM die-sinking Ö Ö Ö Ö Ö Ö Ö Ö Ö Ö Fabrication of semiconductor materials electrically conductive accuracy reduced wire maybend- can onlymakeruledsurface shorter machining time renew tool cheaper, easyto can makecomplexparts tool material complex tool,expansive tool material – – Micronozzle tungsten, copper copper, graphite Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

EDM

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide64 of Table Contents, Slide63 of Table Fabrication ofMicroEDMElectrodes

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide66 of Table Contents, Slide65 of Table Laser-assisted ChemicalDeposition ™ ™ ™ Substrates Laser by laser-assisting Chemical depositionfrom vapor phase Ö Ö Ö Ö Ö Ö Ö Ö Ö metals borides carbides nitrides oxides boron carbon silicon aluminum garnet)orAr+ Nd-YAG (neodymiumyttrium Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

(LCVD)

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide68 of Table Contents, Slide67 of Table Free-Standing Microstructurewith High PressureandLow ™ ™ Low pressureLCVD High pressureLCVD Ö Ö Ö Ö low growth rate <100 low growthrate<100 <<1 bar max) high growthrate(>1.1mm/s >1 bar Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY µ LCVD LCVD

m/s

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide70 of Table Contents, Slide69 of Table ™ ™ ™ Material Light source Principle Ö Ö Ö Ö liquid curingpolymer ultraviolet radiation Xenon lamp laser He-Cd from liquid constructing 2Dslicedthinplane Generating 3Dstructureby Micro Stereo Lithography Two Laser Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide72 of Table Contents, Slide71 of Table IH andSuperStereoLithography Microstructures MadebyMicro Stereo LithographyProcess ™ ™ Super IHprocess IH process Ö Ö Ö Ö Ö Ö Ö higher yieldrate resolution <1 make freelymoveablestructure space liquid form solidin3D resolution 5 layer by need support µ µ m

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MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide74 of Table Contents, Slide73 of Table Localized Electrochemical Stereo Lithography Deposition Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Process Micro

MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP RESEARCH SYSTEMS NANO AND MICRO MICRO AND NANO SYSTEMS RESEARCH GROUP MICRO AND NANO SYSTEMS RESEARCH GROUP Table of Contents, Slide76 of Table Contents, Slide75 of Table The Electrodeof Electrochemical Deposition Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Control Engineering Laboratory Engineering Control HELSINKI UNIVERSITY OF TECHNOLOGY Local LED

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