Lecture 12: Photodiode Detectors
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Fundamentals of Microelectronics Chapter 3 Diode Circuits
9/17/2010 Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box 1 Chapter 3 Diode Circuits 3.1 Ideal Diode 3.2 PN Junction as a Diode 3.3 Applications of Diodes 2 1 9/17/2010 Diode Circuits After we have studied in detail the physics of a diode, it is time to study its behavior as a circuit element and its many applications. CH3 Diode Circuits 3 Diode’s Application: Cell Phone Charger An important application of diode is chargers. Diode acts as the black box (after transformer) that passes only the positive half of the stepped-down sinusoid. CH3 Diode Circuits 4 2 9/17/2010 Diode’s Action in The Black Box (Ideal Diode) The diode behaves as a short circuit during the positive half cycle (voltage across it tends to exceed zero), and an open circuit during the negative half cycle (voltage across it is less than zero). CH3 Diode Circuits 5 Ideal Diode In an ideal diode, if the voltage across it tends to exceed zero, current flows. It is analogous to a water pipe that allows water to flow in only one direction. CH3 Diode Circuits 6 3 9/17/2010 Diodes in Series Diodes cannot be connected in series randomly. For the circuits above, only a) can conduct current from A to C. CH3 Diode Circuits 7 IV Characteristics of an Ideal Diode V V R = 0⇒ I = = ∞ R = ∞⇒ I = = 0 R R If the voltage across anode and cathode is greater than zero, the resistance of an ideal diode is zero and current becomes infinite. -
PN Junction Is the Most Fundamental Semiconductor Device
Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box 1 Chapter 2 Basic Physics of Semiconductors 2.1 Semiconductor materials and their properties 2.2 PN-junction diodes 2.3 Reverse Breakdown 2 Semiconductor Physics Semiconductor devices serve as heart of microelectronics. PN junction is the most fundamental semiconductor device. CH2 Basic Physics of Semiconductors 3 Charge Carriers in Semiconductor To understand PN junction’s IV characteristics, it is important to understand charge carriers’ behavior in solids, how to modify carrier densities, and different mechanisms of charge flow. CH2 Basic Physics of Semiconductors 4 Periodic Table This abridged table contains elements with three to five valence electrons, with Si being the most important. CH2 Basic Physics of Semiconductors 5 Silicon Si has four valence electrons. Therefore, it can form covalent bonds with four of its neighbors. When temperature goes up, electrons in the covalent bond can become free. CH2 Basic Physics of Semiconductors 6 Electron-Hole Pair Interaction With free electrons breaking off covalent bonds, holes are generated. Holes can be filled by absorbing other free electrons, so effectively there is a flow of charge carriers. CH2 Basic Physics of Semiconductors 7 Free Electron Density at a Given Temperature E n 5.21015T 3/ 2 exp g electrons/ cm3 i 2kT 0 10 3 ni (T 300 K) 1.0810 electrons/ cm 0 15 3 ni (T 600 K) 1.5410 electrons/ cm Eg, or bandgap energy determines how much effort is needed to break off an electron from its covalent bond. -
Photodiode and LIGHT EMITTING DIODE
Photodiode and LIGHT EMITTING DIODE Presentation by JASWANT KUMAR ROLL NO.-12 rd IT(3 SEM.) 1 About LEDs (1/2) • A light emitting diode (LED) is essentially a PN junction opto- semiconductor that emits a monochromatic (single color) light when operated in a forward biased direction. • LEDs convert electrical energy into light energy. LED SYMBOL 2 ABOUT LEDS (2/2) • The most important part of a light emitting diode (LED) is the semi-conductor chip located in the center of the bulb as shown at the right. • The chip has two regions separated by a junction. • The junction acts as a barrier to the flow of electrons between the p and the n regions. 3 LED CIRCUIT • In electronics, the basic LED circuit is an electric power circuit used to power a light-emitting diode or LED. The simplest such circuit consists of a voltage source and two components connect in series: a current-limiting resistor (sometimes called the ballast resistor), and an LED. Optionally, a switch may be introduced to open and close the circuit. The switch may be replaced with another component or circuit to form a continuity tester. 4 HOW DOES A LED WORK? • Each time an electron recombines with a positive charge, electric potential energy is converted into electromagnetic energy. • For each recombination of a negative and a positive charge, a quantum of electromagnetic energy is emitted in the form of a photon of light with a frequency characteristic of the semi- conductor material. 5 Mechanism behind photon emission in LEDs? MechanismMechanism isis “injection“injection Electroluminescence”.Electroluminescence”. -
DESIGN and EVALUATION of CONTROLS for DRIFT, VIDEO GAIN, and COLOR BALANCE in SPACEBORNE FACSIMILE CAMERAS by Stephen J. Katrber
NASA TECHNICAL NOTE @ NASA Tli D-73.3 m % & m U.S.A. m (NASA-TN-D-7333) DESIGN AND EVALUATION OP CONTROLS FOR DRIFT, VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE FACSIMILE CAMERAS (NASA) 33 p HC $3.00 CSCL 14E Unclas 4 81/10 23462 Z DESIGN AND EVALUATION OF CONTROLS FOR DRIFT, VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE FACSIMILE CAMERAS by Stephen J. Katrberg, W. Lane Kelly IV, QR~Q~F~&$.MH?AlMS Carroll W. Rowland, and Ernest E. Burcher GQdhU.* . .b"'3H8 Langley Research Center Humpton, Vu. 23665 NATIONAL AERONAUTICS AND SPACE ADMINISTRATION WASHINGTON, D. C. DECEMBER 1973 1. Report No. a. Government Accasrion No. 3. Recipient's Catalog No. NASA TN D-7333 4. Title and Subtitle 5. Report Date DESIGN AND EVALUATION OF CONTROLS FOR DRIFT, December 1973 VIDEO GAIN, AND COLOR BALANCE IN SPACEBORNE 6. Performing Organization Code FACSIMILE CAMERAS 7. Author(s1 8. Performing Organization Rwrt No. Stephen J. Katzberg, W. Lane Kelly IV, Carroll W. Rowland, L-8845 and Ernest E. Burcher 10. Work Unit No. g. Rrforming Organintion Name and Addrerr 502-03-52-04 NASA Langley Research Center 11. Contract or Grant No. Hampton, Va. 23665 13. Type of Repon and Period Covered 12. Sponsoring Agency Name and Addresr Technical Note National Aeronautics and Space Administration 14. Sponsoring Agency Code Washington, D.C. 20546 15:' Subplementary Notes 16. AbsuaR The facsimile camera is an optical-mechanical scanning device which has become an attractive candidate as an imaging system for planetary landers and rovers. This paper presents electronic techniques which permit the acquisition and reconstruction of high-quality images with this device, even under varying lighting conditions. -
Special Diodes 2113
CHAPTER54 Learning Objectives ➣ Zener Diode SPECIAL ➣ Voltage Regulation ➣ Zener Diode as Peak Clipper DIODES ➣ Meter Protection ➣ Zener Diode as a Reference Element ➣ Tunneling Effect ➣ Tunnel Diode ➣ Tunnel Diode Oscillator ➣ Varactor Diode ➣ PIN Diode ➣ Schottky Diode ➣ Step Recovery Diode ➣ Gunn Diode ➣ IMPATT Diode Ç A major application for zener diodes is voltage regulation in dc power supplies. Zener diode maintains a nearly constant dc voltage under the proper operating conditions. 2112 Electrical Technology 54.1. Zener Diode It is a reverse-biased heavily-doped silicon (or germanium) P-N junction diode which is oper- ated in the breakdown region where current is limited by both external resistance and power dissipa- tion of the diode. Silicon is perferred to Ge because of its higher temperature and current capability. As seen from Art. 52.3, when a diode breaks down, both Zener and avalanche effects are present although usually one or the other predominates depending on the value of reverse voltage. At reverse voltages less than 6 V, Zener effect predominates whereas above 6 V, avalanche effect is predomi- nant. Strictly speaking, the first one should be called Zener diode and the second one as avalanche diode but the general practice is to call both types as Zener diodes. Zener breakdown occurs due to breaking of covalent bonds by the strong electric field set up in the depletion region by the reverse voltage. It produces an extremely large number of electrons and holes which constitute the reverse saturation current (now called Zener current, Iz) whose value is limited only by the external resistance in the circuit. -
Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits
Sensors and Materials, Vol. 13, No. 4 (2001) 189-206 MYUTokyo S &M0442 Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits Horst Zimmermann Institut fiirElektrische Mess- und Schaltungstechnik, Technische Universitat Wien, Gusshausstrasse, A-1040 Wien, Austria (Received February 28, 2000; accepted February3, 2001) Key words: integrated circuits, integrated optoelectronics, optical receivers, optoelectronic de vices, PIN photodiode, double photodiode, silicon A review of the properties of photodiodes available through the use of standard silicon technologies is presented and some examples of how to improve monolithically integrated photodiodes are shown. The application of these photodiodes in optoelectronic integrated circuits (OEICs) is described. An innovative double photodiode requiring no process modificationsin complementary metal-oxide sem!conductor (CMOS) and bipolar CMOS (BiCMOS) technologies achieves a bandwidth in excess of 360 MHzand data rates exceeding 622 Mb/s. Furthermore, a new PIN photodiode requiring only one additional mask for the integration in a CMOS process is capable of handling a data rate of 1.1 Gb/s. Antireflection coating improves the quantum efficiencyof integrated photodiodes to values of more than 90%. Integrated optical receivers for data communication achieve a high bandwidth and a high sensitivity. Furthermore, an OEIC for application in optical storage systems is introduced. Author's e-mail address: [email protected] 189 l 90 Sensors and Materials, Vol. 13, No. 4 (2001) 1. Introduction Photons with an energy larger than the band gap generate electron-hole pairs in semiconductors. This photogeneration G obeys an exponential law: aP,0 G( x) = -- exp( -ax), Ahv (1) where xis the penetration depth coordinate, P0 is the nonreflectedportion of the incident optical power, A is the light-sensitive area of a photodiode, hv is the energy of the photon, and a is the wavelength-dependent absorption coefficient. -
Valve Biasing
VALVE AMP BIASING Biased information How have valve amps survived over 30 years of change? Derek Rocco explains why they are still a vital ingredient in music making, and talks you through the mysteries of biasing N THE LAST DECADE WE HAVE a signal to the grid it causes a water as an electrical current, you alter the negative grid voltage by seen huge advances in current to flow from the cathode to will never be confused again. When replacing the resistor I technology which have the plate. The grid is also known as your tap is turned off you get no to gain the current draw required. profoundly changed the way we the control grid, as by varying the water flowing through. With your Cathode bias amplifiers have work. Despite the rise in voltage on the grid you can control amp if you have too much negative become very sought after. They solid-state and digital modelling how much current is passed from voltage on the grid you will stop have a sweet organic sound that technology, virtually every high- the cathode to the plate. This is the electrical current from flowing. has a rich harmonic sustain and profile guitarist and even recording known as the grid bias of your amp This is known as they produce a powerful studios still rely on good ol’ – the correct bias level is vital to the ’over-biased’ soundstage. Examples of these fashioned valves. operation and tone of the amplifier. and the amp are most of the original 1950’s By varying the negative grid will produce Fender tweed amps such as the What is a valve? bias the technician can correctly an unbearable Deluxe and, of course, the Hopefully, a brief explanation will set up your amp for maximum distortion at all legendary Vox AC30. -
Leds As Single-Photon Avalanche Photodiodes by Jonathan Newport, American University
LEDs as Single-Photon Avalanche Photodiodes by Jonathan Newport, American University Lab Objectives: Use a photon detector to illustrate properties of random counting experiments. Use limiting probability distributions to perform statistical analysis on a physical system. Plot histograms. Condition a detector’s signal for further electronic processing. Use a breadboard, power supply and oscilloscope to construct a circuit and make measurements. Learn about semiconductor device physics. Reading: Taylor 3.2 – The Square-Root Rule for a Counting Experiment pp. 48-49 Taylor 5.1-5.3 – Histograms and the Normal Distribution pp. 121-135 Taylor Ch. 11 – The Poisson Distribution pp. 245-254 Taylor Problem 5.6 – The Exponential Distribution p. 155 Experiment #1: Lighting an LED A Light-Emitting Diode is a non-linear circuit element that can produce a controlled amount of light. The AND113R datasheet shows that the luminous intensity is proportional to the current flowing through the LED. As illustrated in the IV curve shown below, the current flowing through the diode is in turn proportional to the voltage across the diode. Diodes behave like a one-way valve for current. When the voltage on the Anode is more positive than the voltage on the Cathode, then the diode is said to be in Forward Bias. As the voltage across the diode increases, the current through the diode increases dramatically. The heat generated by this current can easily destroy the device. It is therefore wise to install a current-limiting resistor in series with the diode to prevent thermal runaway. When the voltage on the Cathode is more positive than the voltage on the Anode, the diode is said to be in Reverse Bias. -
Junction Field Effect Transistor (JFET)
Junction Field Effect Transistor (JFET) The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes only and are simplified versions of the actual device. Note that the material that serves as the foundation of the device defines the channel type. Like the BJT, the JFET is a three terminal device. Although there are physically two gate diffusions, they are tied together and act as a single gate terminal. The other two contacts, the drain and source, are placed at either end of the channel region. The JFET is a symmetric device (the source and drain may be interchanged), however it is useful in circuit design to designate the terminals as shown in the circuit symbols above. The operation of the JFET is based on controlling the bias on the pn junction between gate and channel (note that a single pn junction is discussed since the two gate contacts are tied together in parallel – what happens at one gate-channel pn junction is happening on the other). If a voltage is applied between the drain and source, current will flow (the conventional direction for current flow is from the terminal designated to be the gate to that which is designated as the source). The device is therefore in a normally on state. -
Vacuum Tube Theory, a Basics Tutorial – Page 1
Vacuum Tube Theory, a Basics Tutorial – Page 1 Vacuum Tubes or Thermionic Valves come in many forms including the Diode, Triode, Tetrode, Pentode, Heptode and many more. These tubes have been manufactured by the millions in years gone by and even today the basic technology finds applications in today's electronics scene. It was the vacuum tube that first opened the way to what we know as electronics today, enabling first rectifiers and then active devices to be made and used. Although Vacuum Tube technology may appear to be dated in the highly semiconductor orientated electronics industry, many Vacuum Tubes are still used today in applications ranging from vintage wireless sets to high power radio transmitters. Until recently the most widely used thermionic device was the Cathode Ray Tube that was still manufactured by the million for use in television sets, computer monitors, oscilloscopes and a variety of other electronic equipment. Concept of thermionic emission Thermionic basics The simplest form of vacuum tube is the Diode. It is ideal to use this as the first building block for explanations of the technology. It consists of two electrodes - a Cathode and an Anode held within an evacuated glass bulb, connections being made to them through the glass envelope. If a Cathode is heated, it is found that electrons from the Cathode become increasingly active and as the temperature increases they can actually leave the Cathode and enter the surrounding space. When an electron leaves the Cathode it leaves behind a positive charge, equal but opposite to that of the electron. In fact there are many millions of electrons leaving the Cathode. -
PIN Diode Drivers Literature Number: SNVA531
PIN Diode Drivers Literature Number: SNVA531 PIN Diode Drivers National Semiconductor PIN Diode Drivers Application Note 49 March 1986 INTRODUCTION The charge control model of a diode1,2 leads to the charge The DH0035/DH0035C is a TTL/DTL compatible, DC continuity equation given in Equation (1). coupled, high speed PIN diode driver. It is capable of deliver- ing peak currents in excess of one ampere at speeds up to 10 MHz. This article demonstrates how the DH0035 may be (1) applied to driving PIN diodes and comparable loads which = require high peak currents at high repetition rates. The sa- where: Q charge due excess minority carriers lient characteristics of the device are summarized in Table 1. τ = mean lifetime of the minority carriers Equation (1) implies a circuit model shown in Figure 2. Under TABLE 1. DH0035 Characteristics steady conditions hence: Parameter Conditions Value Differential Supply 30V Max. (2) Voltage (V+ −V−) where: I = steady state “ON” current. Output Current 1000 mA Maximum Power 1.5W tdelay PRF = 5.0 MHz 10 ns + − trise V −V =20V 15 ns 10% to 90% + − tfall V −V =20V 10 ns 90% to 10% PIN DIODE SWITCHING REQUIREMENTS Figure 1 shows a simplified schematic of a PIN diode switch. AN008750-2 Typically, the PIN diode is used in RF through microwave fre- I = Total Current quency modulators and switches. Since the diode is in shunt IDC = SS Control Current with the RF path, the RF signal is attenuated when the diode iRF = RF Signal Current is forward biased (“ON”), and is passed unattenuated when FIGURE 2. -
Bias Circuits for RF Devices
Bias Circuits for RF Devices Iulian Rosu, YO3DAC / VA3IUL, http://www.qsl.net/va3iul A lot of RF schematics mention: “bias circuit not shown”; when actually one of the most critical yet often overlooked aspects in any RF circuit design is the bias network. The bias network determines the amplifier performance over temperature as well as RF drive. The DC bias condition of the RF transistors is usually established independently of the RF design. Power efficiency, stability, noise, thermal runway, and ease to use are the main concerns when selecting a bias configuration. A transistor amplifier must possess a DC biasing circuit for a couple of reasons. • We would require two separate voltage supplies to furnish the desired class of bias for both the emitter-collector and the emitter-base voltages. • This is in fact still done in certain applications, but biasing was invented so that these separate voltages could be obtained from but a single supply. • Transistors are remarkably temperature sensitive, inviting a condition called thermal runaway. Thermal runaway will rapidly destroy a bipolar transistor, as collector current quickly and uncontrollably increases to damaging levels as the temperature rises, unless the amplifier is temperature stabilized to nullify this effect. Amplifier Bias Classes of Operation Special classes of amplifier bias levels are utilized to achieve different objectives, each with its own distinct advantages and disadvantages. The most prevalent classes of bias operation are Class A, AB, B, and C. All of these classes use circuit components to bias the transistor at a different DC operating current, or “ICQ”. When a BJT does not have an A.C.