Photodiode and LIGHT EMITTING DIODE
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Phys 586 Laboratory Lab11
Phys 586 Laboratory Lab11 Goal: In this lab you will make measurements with a photodiode. While not the same type of diode used in diode arrays for radiation planning or microstrip detectors in high energy physics, many of the basic device characteristics are the same. Additionally, photodiodes are used in x-ray imaging (along with a scintillator layer) and avalanche photodiodes find application in high energy physics. Reading: See Photodiode Characteristics article in the Readings. Lab: 1. Construct the LED circuit shown in Figure 1. a) Is the LED forward or reverse biased? The LED is forward biased. b) What is the purpose of the resistor? The value of the resistor is chosen so that the specified LED operating current results in the desired LED voltage drop. The value that this resistor should have can be determined using Kirchhoff’s loop rule and Ohm’s Law. Vary the voltage and convince yourself the brightness of the LED changes. Note the longer leg on the LED is the anode. 1 2. Measure the current through the LED and the voltage across the LED for LED supply voltages of 2.5, 5, 8, 10, 13, 15, 18 and 20V. LED LED LED Supply Voltage Current Voltage (V) (V) (mA) 2.5 1.67 2.46 5.01 1.76 4.91 8.01 1.82 7.8 10.05 1.85 9.9 13 1.9 12.83 15 1.92 14.9 18 1.96 17.82 20 1.99 20.1 Circuit 1: LED Current vs LED Voltage 25 20 15 10 LED Current (mA) 5 0 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 LED Voltage (V) 2 3. -
Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits
Sensors and Materials, Vol. 13, No. 4 (2001) 189-206 MYUTokyo S &M0442 Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits Horst Zimmermann Institut fiirElektrische Mess- und Schaltungstechnik, Technische Universitat Wien, Gusshausstrasse, A-1040 Wien, Austria (Received February 28, 2000; accepted February3, 2001) Key words: integrated circuits, integrated optoelectronics, optical receivers, optoelectronic de vices, PIN photodiode, double photodiode, silicon A review of the properties of photodiodes available through the use of standard silicon technologies is presented and some examples of how to improve monolithically integrated photodiodes are shown. The application of these photodiodes in optoelectronic integrated circuits (OEICs) is described. An innovative double photodiode requiring no process modificationsin complementary metal-oxide sem!conductor (CMOS) and bipolar CMOS (BiCMOS) technologies achieves a bandwidth in excess of 360 MHzand data rates exceeding 622 Mb/s. Furthermore, a new PIN photodiode requiring only one additional mask for the integration in a CMOS process is capable of handling a data rate of 1.1 Gb/s. Antireflection coating improves the quantum efficiencyof integrated photodiodes to values of more than 90%. Integrated optical receivers for data communication achieve a high bandwidth and a high sensitivity. Furthermore, an OEIC for application in optical storage systems is introduced. Author's e-mail address: [email protected] 189 l 90 Sensors and Materials, Vol. 13, No. 4 (2001) 1. Introduction Photons with an energy larger than the band gap generate electron-hole pairs in semiconductors. This photogeneration G obeys an exponential law: aP,0 G( x) = -- exp( -ax), Ahv (1) where xis the penetration depth coordinate, P0 is the nonreflectedportion of the incident optical power, A is the light-sensitive area of a photodiode, hv is the energy of the photon, and a is the wavelength-dependent absorption coefficient. -
Leds As Single-Photon Avalanche Photodiodes by Jonathan Newport, American University
LEDs as Single-Photon Avalanche Photodiodes by Jonathan Newport, American University Lab Objectives: Use a photon detector to illustrate properties of random counting experiments. Use limiting probability distributions to perform statistical analysis on a physical system. Plot histograms. Condition a detector’s signal for further electronic processing. Use a breadboard, power supply and oscilloscope to construct a circuit and make measurements. Learn about semiconductor device physics. Reading: Taylor 3.2 – The Square-Root Rule for a Counting Experiment pp. 48-49 Taylor 5.1-5.3 – Histograms and the Normal Distribution pp. 121-135 Taylor Ch. 11 – The Poisson Distribution pp. 245-254 Taylor Problem 5.6 – The Exponential Distribution p. 155 Experiment #1: Lighting an LED A Light-Emitting Diode is a non-linear circuit element that can produce a controlled amount of light. The AND113R datasheet shows that the luminous intensity is proportional to the current flowing through the LED. As illustrated in the IV curve shown below, the current flowing through the diode is in turn proportional to the voltage across the diode. Diodes behave like a one-way valve for current. When the voltage on the Anode is more positive than the voltage on the Cathode, then the diode is said to be in Forward Bias. As the voltage across the diode increases, the current through the diode increases dramatically. The heat generated by this current can easily destroy the device. It is therefore wise to install a current-limiting resistor in series with the diode to prevent thermal runaway. When the voltage on the Cathode is more positive than the voltage on the Anode, the diode is said to be in Reverse Bias. -
LED Circuit and Device Physics 120 Pts Objective: Meas
Applied Quantum Mechanics for Electrical Engineers Workshop III – LED Circuit and Device Physics 120 pts Objective: Measure the voltage drop across an LED in a simple circuit, demonstrate that the voltage drop is proportional to the band gap of the semiconductor material, and analyze the behavior of the circuit in terms of the device physics of the PN junction. Background: A light emitting diode (LED) is a device that is designed by fabricating a PN junction or diode as illustrated in Figure 1. Figure 1. Schematic of LED and illustration of carrier movement resulting in emission of light. Image: http://blog.ucsusa.org/wp-content/uploads/2014/10/UCS-LED-how-it-works-graphic.gif A simple PN junction can be fabricated by growing a p-type material on top of an n-type material, or by doping an n-type material with sufficient p-type dopants so that the surface becomes p-type. The energy band diagram for a PN Junction under forward bias conditions is illustrated in Figure 2, along with a schematic of the circuit under forward bias. Figure 2. LED circuit and PN Junction energy band diagram illustrating carrier movement under forward bias. Image: http://www.vit.ac.in/onlinelab/m9.aspx The application of a forward bias to the circuit results in a decrease in the barrier to electron movement from the n-side to the p-side. Likewise, the barrier of hole movement from the p- side to the n-side is also reduced. Thus, majority carriers from each side are able to cross the energy barrier. -
LUXEON Illumination Leds Circuit Design and Layout Practices to Minimize Electrical Stress
ILLUMINATION LUXEON Illumination LEDs Circuit Design and Layout Practices to Minimize Electrical Stress Introduction LED circuits operating in the real world can be subjected to various abnormal electrical overstress situations. Among the most common are: • Isolation test during validation or production of the luminaire (“hi-pot test”) • Lightning strikes and line transients • Hot-swapping of LED circuits (disconnecting and reconnecting an LED circuit board to the driver while the driver remains powered up) • Driver failures • ESD (Electro-Static Discharge) Scope This paper presents background information on some of these overstress modes and discusses recommendations to minimize the potentially destructive effects of electrical overstress on LEDs. AB06 LUXEON LEDs Application Brief ©2016 Lumileds Holding B.V. All rights reserved. Table of Contents Scope . 1 1 . Electrical Overstress . 3 2 . Isolation Test Requirements . 3 3 . Isolation Test on an LED Board . 4 4 . LUXEON Rebel LED Circuit Model on a Board . 5 5 . Electrical Stress Simulation during Isolation Test . 6 6 . Protection Circuits . 8 7 . High Voltage Drivers . 10 8 . Lightning Strikes and Line Transients . 11 9 . Recommendations . 11 About Lumileds . 12 AB06 LUXEON LEDs Application Brief 20170605 ©2017 Lumileds Holding B.V. All rights reserved. 2 1. Electrical Overstress Electrical Overstress (EOS) can present itself to an LED array in two forms, either as excess voltage or excess current. Because voltage and current are interrelated, it is not always possible to identify whether a high voltage or high current caused a failure. Currents can flow through an LED array in two ways: differential mode and common mode (see Figure 1). Differential mode currents can be very destructive. -
The Importance of Leds in Switches
WHITEPAPER The Importance of LEDs in Switches LEDS PROVIDE ADDITIONAL OPTIONS FOR DESIGNERS AND IMPROVE THE FUNCTIONALITY OF THE SWITCH NKK SWITCHES THE IMPORTANCE OF LEDs IN SWITCHES Why put an LED on a switch? LEDs are a simple, compact way to indicate the status of a circuit. By having the LED in the switch, it reduces space and component count for an assembly. There are many ways to control LEDs. Some indicator circuits use the switch’s own circuity in an ON-OFF fashion. Others are bicolor or even RGB and are hooked up to a microprocessor to give additional visual feedback. Most of the illuminated switches available at NKK Switches have the LED circuit separate from that of the switching circuit. This is to provide maximum flexibility for design. 1. The two circuits found in an illuminated switch (single pole) Switching Circuit LED Circuit UB2 1 L (+) L(+) NC NC R1 +VDC Switching NO NO LED Circuit Circuit 3 2 GND L(-) L (-) COM COM The simple indicator circuit shown above is one that uses a spare pole on the switch to turn OFF and ON the LED to show that a circuit is connected. This type of circuit just shows the state of the switch, either OFF or ON, with the reasonable assumption that if the LED is illuminated then the load circuit is active as well. 2. Simple single LED ON-OFF indicator using the second pole of a double pole switch to light the LED. The dotted line indicates that the two poles are mechanically connected to each other. -
Circuit Topology Analysis for LED Lighting and Its Formulation Development
energies Article Circuit Topology Analysis for LED Lighting and its Formulation Development William Chen, Ka Wai Eric Cheng * and Jianwei Shao Power Electronics Research Centre, Department of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, China; [email protected] (W.C.); [email protected] (J.S.) * Correspondence: [email protected] Received: 30 July 2019; Accepted: 24 October 2019; Published: 4 November 2019 Abstract: Light emitted diode (LED) is becoming more popular in the illumination field, and the design of LED lighting is generally made to provide illumination at lower power usage, helping save energy. A power electronic converter is needed to provide the power conversion for these LEDs to meet high efficiency, reduce components, and have low voltage ripple magnitude. The power supply for LED is revisited in this paper. The LEDs connected in series with diode, transistor, or inductor paths are examined. The formulation for each of the cases is described, including the classical converters of buck, boost, buck–boost, and Cuk.´ The circuit reductions of the classic circuit, circuit without the capacitor, and without a freewheeling diode are studied. Using LED to replace freewheeling diodes is proposed for circuit component reduction. General equations for different connection paths have been developed. The efficiency and output ripple amplitude of the proposed power converters are investigated. Analytical study shows that the efficiency of proposed circuits can be high and voltage ripple magnitude of proposed circuits can be low. The results show that the proposed circuit topologies can be easily adapted to design LED lighting, which can meet the criteria of high efficiency, minimum components, and low-voltage ripple magnitude at the same time. -
Bipolar Junction Transistor As a Detector for Measuring in Diagnostic X-Ray Beams
2013 International Nuclear Atlantic Conference - INAC 2013 Recife, PE, Brazil, November 24-29, 2013 ASSOCIAÇÃO BRASILEIRA DE ENERGIA NUCLEAR - ABEN ISBN: 978-85-99141-05-2 BIPOLAR JUNCTION TRANSISTOR AS A DETECTOR FOR MEASURING IN DIAGNOSTIC X-RAY BEAMS Francisco A. Cavalcanti1,2, David S. Monte1,2, Aline N. Alves1,2, Fábio R. Barros2, Marcus A. P. Santos2, and Luiz A. P. Santos1,2 1 Departamento de Energia Nuclear Universidade Federal de Pernambuco Av. Prof. Luiz Freire, 1000 50740-540 Recife, PE [email protected] 2 Centro Regional de Ciências Nucleares do Nordeste (CRCN-NE / CNEN) Av. Prof. Luiz Freire, 1 50740-540 Recife, PE [email protected] ABSTRACT Photodiode and phototransistor are the most frequently used devices for measuring ionizing radiation in medical applications. The cited devices have the operating principle well known, however the bipolar junction transistor (BJT) is not a typical device used as a detector for measuring some physical quantities for diagnostic radiation. In fact, a photodiode, for example, has an area about 10 mm square and a BJT has an area which can be more than 10 thousands times smaller. The purpose of this paper is to bring a new technique to estimate some physical quantities or parameters in diagnostic radiation; for example, peak kilovoltage (kVp), deep dose measurements. The methodology for each type of evaluation depends on the energy range of the radiation and the physical quantity or parameter to be measured. Actually, some characteristics of the incident radiation under the device can be correlated with the readout signal, which is a function of the electrical currents in the electrodes of the BJT: Collector, Base and Emitter. -
Designing Photodiode Amplifier Circuits with Opa128
® DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier RS achieves its 75fA maximum bias current without compro- mise. Using standard design techniques, serious perfor- I R C mance trade-offs were required which sacrificed overall P J J amplifier performance in order to reach femtoamp (fA = 10–15 A) bias currents. IP = photocurrent RJ = shunt resistance of diode junction CJ = junction capacitance UNIQUE DESIGN MINIMIZES R = series resistance PERFORMANCE TRADE-OFFS S FIGURE 1. Photodiode Equivalent Circuit. Small-geometry FETs have low bias current, of course, but FET size reduction reduces transconductance and increases noise dramatically, placing a serious restriction on perfor- Responsivity ≈ 109V/W 5pF mance when low bias current is achieved simply by making Bandwidth: DC to ≈ 30Hz input FETs extremely small. Unfortunately, larger geom- Offset Voltage ≈ ±485µV etries suffer from high gate-to-substrate isolation diode leak- HP 109Ω age (which is the major contribution to BIFET® amplifier 5082-4204 input bias current). Replacing the reverse-biased gate-to-substrate isolation di- 2 6 OPA128LM ode structure of BlFETs with dielectric isolation removes 3 this large leakage current component which, together with a 8 noise-free cascode circuit, special FET geometry, and ad- 109Ω vanced wafer processing, allows far higher Difet ® perfor- mance compared to BIFETs. FIGURE 2. High-Sensitivity Photodiode Amplifier. HOW TO IMPROVE PHOTODIODE AMPLIFIER PERFORMANCE An important electro-optical application of FET op amps is √ for photodiode amplifiers. The unequaled performance of eOUT = 4k TBR the OPA128 is well-suited for very high sensitivity detector k: Boltzman’s constant = 1.38 x 10–23 J/K ° designs. -
Integration of Photodiode As a Data Receiver in Visible Light Communication Circuit
International Journal of Scientific Engineering and Science Volume 4, Issue 9, pp. 67-77, 2020. ISSN (Online): 2456-7361 Integration of Photodiode as a Data Receiver in Visible Light Communication Circuit ANUSIUBA Overcomer Ifeanyi Alex1, EKWEALOR Oluchuku Uzoamaka2, ORJI Ifeoma Maryann3, AKAWUKU Godspower I4 1, 2, 3, 4Department of Computer Science, Faculty of Physical Sciences, Nnamdi Azikiwe University Awka Anambra State Nigeria E-mail: [email protected], [email protected], [email protected], [email protected] Abstract— The exponential increase of mobile data traffic in the last two decades has identified the limitations and deficiency of RF-only mobile communications. Visible light communication VLC research has shown that it is capable of achieving very high data rates (nearly 100 Mbps in IEEE 802.15.7 standard and up to multiple Gbps) however lacking practical implementation. Several modulation techniques have been proposed in theory to improve the data rate and maximum range of VLC system. In practice, the intensity modulation tends to be susceptible to ambient noise while pulse width modulation flickers the LED at a human eye disturbing frequency. Based on the limitations of the past attempts to practically implement a noiseless transmission at a high data rate, this work focused on designing, implementing and integration of photodiode as a data receiver for a real time VLC system capable of noiseless data transmission using quasi pulse with modulation. The design adopted Beagle-Bone-Black (BBB) as development platform while prototype modeling methodology was adopted for VLC implementation and the circuit was tested with PROTUES 8 Professional and data sent reliably and accurately over a short distance at a fair speed which ensures that the initial goals for the functionality of this new system which includes being able to send audio, text or pictures over a distance of approximately 10 meter at a data rate of at least 10 Mbps was achieved using Photodiode as Data Receiver. -
SDN136 Analog High Speed Optocoupler 1Mbd, Photodiode with Transistor Output
SDN136 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features The SDN136 is a high speed optocoupler consisting of an TTL Compatible infrared GaAs LED optically coupled through a high High Bit Rate: 1Mb/s isolation barrier to an integrated high speed transistor and Bandwidth: 2.0MHz photodiode. Open Collector Output High Isolation Voltage (5000VRMS) Separate access to the photodiode and transistor allow High Common Mode Interference Immunity users to reduce base-collector capacitance, enabling much RoHS / Pb-Free / REACH Compliant higher switching speeds. Signals with frequencies of up to 2.0MHz can be switched, giving the SDN136 a much broader application range than traditional optocouplers. Agency Approvals The SDN136 comes standard in an 8 pin DIP package. UL / C-UL: File # E201932 Applications VDE: File # 40035191 (EN 60747-5-2) High Speed Logic Ground Isolation Replace Slower Speed Optocouplers Absolute Maximum Ratings Line Receivers Power Transistor Isolation Pulse Transformer Replacement The values indicated are absolute stress ratings. Functional Switch Mode Power Supplies operation of the device is not implied at these or any High Voltage Insulation conditions in excess of those defined in electrical Ground Isolation – Analog Signals characteristics section of this document. Exposure to absolute Maximum Ratings may cause permanent damage to the device and may adversely affect reliability. Schematic Diagram Storage Temperature …………………………..-55 to +125°C Operating Temperature …………………………-40 -
All About LED's (PDF)
All About LEDs Created by Tyler Cooper Last updated on 2018-08-22 03:33:51 PM UTC Guide Contents Guide Contents 2 Overview 4 What is an LED? 5 All the different sizes and colors 6 What are LEDs used for? 9 Changing the brightness with resistors 12 Which LED is brightest (what is the resistor)? 13 Which LED is dimmest (what is the resistor)? 13 If we had an LED with a resistor that was 5K ohms, which LED would it be brighter than? Which LED would it be dimmer than? 13 Changing the brightness with voltage 13 Which LED is brightest (what is the voltage)? 14 Which LED is dimmest (what is the voltage)? 14 If we had an LED with a 1.0K resistor connected to a 4.2v supply, which LED would it be brighter than? Which LED would it be dimmer than? 14 Max brightness!? 14 We connect our LED to the resistor, as we turn it from infinite to to zero, what happens? 14 We connect our LED through a 1K resistor, as we adjust the voltage from 0 volts to infinite volts, what happens? What happened? 1515 The LED datasheet 16 Forward Voltage and KVL 18 Quick Quiz! 19 Let's say we have the same circuit above, except this time its a 5V battery and an LED with a forward voltage of 2.5V, how much voltage must be 'absorbed' by the resistor? 19 Let's say we have the same circuit above, except this time its a 5V battery and an LED with a forward voltage of 3.4V, how much voltage must be 'absorbed' by the resistor? 19 Ohm's Law 19 If I have a 3 ohm resistor (R) with a current of 0.5 Amperes (I) going through it.