Overview of Camera Systems Used in Beam Instrumentation
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Photodiode and LIGHT EMITTING DIODE
Photodiode and LIGHT EMITTING DIODE Presentation by JASWANT KUMAR ROLL NO.-12 rd IT(3 SEM.) 1 About LEDs (1/2) • A light emitting diode (LED) is essentially a PN junction opto- semiconductor that emits a monochromatic (single color) light when operated in a forward biased direction. • LEDs convert electrical energy into light energy. LED SYMBOL 2 ABOUT LEDS (2/2) • The most important part of a light emitting diode (LED) is the semi-conductor chip located in the center of the bulb as shown at the right. • The chip has two regions separated by a junction. • The junction acts as a barrier to the flow of electrons between the p and the n regions. 3 LED CIRCUIT • In electronics, the basic LED circuit is an electric power circuit used to power a light-emitting diode or LED. The simplest such circuit consists of a voltage source and two components connect in series: a current-limiting resistor (sometimes called the ballast resistor), and an LED. Optionally, a switch may be introduced to open and close the circuit. The switch may be replaced with another component or circuit to form a continuity tester. 4 HOW DOES A LED WORK? • Each time an electron recombines with a positive charge, electric potential energy is converted into electromagnetic energy. • For each recombination of a negative and a positive charge, a quantum of electromagnetic energy is emitted in the form of a photon of light with a frequency characteristic of the semi- conductor material. 5 Mechanism behind photon emission in LEDs? MechanismMechanism isis “injection“injection Electroluminescence”.Electroluminescence”. -
Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits
Sensors and Materials, Vol. 13, No. 4 (2001) 189-206 MYUTokyo S &M0442 Integrated High-Speed, High-Sensitivity Photodiodes and Optoelectronic Integrated Circuits Horst Zimmermann Institut fiirElektrische Mess- und Schaltungstechnik, Technische Universitat Wien, Gusshausstrasse, A-1040 Wien, Austria (Received February 28, 2000; accepted February3, 2001) Key words: integrated circuits, integrated optoelectronics, optical receivers, optoelectronic de vices, PIN photodiode, double photodiode, silicon A review of the properties of photodiodes available through the use of standard silicon technologies is presented and some examples of how to improve monolithically integrated photodiodes are shown. The application of these photodiodes in optoelectronic integrated circuits (OEICs) is described. An innovative double photodiode requiring no process modificationsin complementary metal-oxide sem!conductor (CMOS) and bipolar CMOS (BiCMOS) technologies achieves a bandwidth in excess of 360 MHzand data rates exceeding 622 Mb/s. Furthermore, a new PIN photodiode requiring only one additional mask for the integration in a CMOS process is capable of handling a data rate of 1.1 Gb/s. Antireflection coating improves the quantum efficiencyof integrated photodiodes to values of more than 90%. Integrated optical receivers for data communication achieve a high bandwidth and a high sensitivity. Furthermore, an OEIC for application in optical storage systems is introduced. Author's e-mail address: [email protected] 189 l 90 Sensors and Materials, Vol. 13, No. 4 (2001) 1. Introduction Photons with an energy larger than the band gap generate electron-hole pairs in semiconductors. This photogeneration G obeys an exponential law: aP,0 G( x) = -- exp( -ax), Ahv (1) where xis the penetration depth coordinate, P0 is the nonreflectedportion of the incident optical power, A is the light-sensitive area of a photodiode, hv is the energy of the photon, and a is the wavelength-dependent absorption coefficient. -
Leds As Single-Photon Avalanche Photodiodes by Jonathan Newport, American University
LEDs as Single-Photon Avalanche Photodiodes by Jonathan Newport, American University Lab Objectives: Use a photon detector to illustrate properties of random counting experiments. Use limiting probability distributions to perform statistical analysis on a physical system. Plot histograms. Condition a detector’s signal for further electronic processing. Use a breadboard, power supply and oscilloscope to construct a circuit and make measurements. Learn about semiconductor device physics. Reading: Taylor 3.2 – The Square-Root Rule for a Counting Experiment pp. 48-49 Taylor 5.1-5.3 – Histograms and the Normal Distribution pp. 121-135 Taylor Ch. 11 – The Poisson Distribution pp. 245-254 Taylor Problem 5.6 – The Exponential Distribution p. 155 Experiment #1: Lighting an LED A Light-Emitting Diode is a non-linear circuit element that can produce a controlled amount of light. The AND113R datasheet shows that the luminous intensity is proportional to the current flowing through the LED. As illustrated in the IV curve shown below, the current flowing through the diode is in turn proportional to the voltage across the diode. Diodes behave like a one-way valve for current. When the voltage on the Anode is more positive than the voltage on the Cathode, then the diode is said to be in Forward Bias. As the voltage across the diode increases, the current through the diode increases dramatically. The heat generated by this current can easily destroy the device. It is therefore wise to install a current-limiting resistor in series with the diode to prevent thermal runaway. When the voltage on the Cathode is more positive than the voltage on the Anode, the diode is said to be in Reverse Bias. -
Invention of Digital Photograph
Invention of Digital photograph Digital photography uses cameras containing arrays of electronic photodetectors to capture images focused by a lens, as opposed to an exposure on photographic film. The captured images are digitized and stored as a computer file ready for further digital processing, viewing, electronic publishing, or digital printing. Until the advent of such technology, photographs were made by exposing light sensitive photographic film and paper, which was processed in liquid chemical solutions to develop and stabilize the image. Digital photographs are typically created solely by computer-based photoelectric and mechanical techniques, without wet bath chemical processing. The first consumer digital cameras were marketed in the late 1990s.[1] Professionals gravitated to digital slowly, and were won over when their professional work required using digital files to fulfill the demands of employers and/or clients, for faster turn- around than conventional methods would allow.[2] Starting around 2000, digital cameras were incorporated in cell phones and in the following years, cell phone cameras became widespread, particularly due to their connectivity to social media websites and email. Since 2010, the digital point-and-shoot and DSLR formats have also seen competition from the mirrorless digital camera format, which typically provides better image quality than the point-and-shoot or cell phone formats but comes in a smaller size and shape than the typical DSLR. Many mirrorless cameras accept interchangeable lenses and have advanced features through an electronic viewfinder, which replaces the through-the-lens finder image of the SLR format. While digital photography has only relatively recently become mainstream, the late 20th century saw many small developments leading to its creation. -
Bipolar Junction Transistor As a Detector for Measuring in Diagnostic X-Ray Beams
2013 International Nuclear Atlantic Conference - INAC 2013 Recife, PE, Brazil, November 24-29, 2013 ASSOCIAÇÃO BRASILEIRA DE ENERGIA NUCLEAR - ABEN ISBN: 978-85-99141-05-2 BIPOLAR JUNCTION TRANSISTOR AS A DETECTOR FOR MEASURING IN DIAGNOSTIC X-RAY BEAMS Francisco A. Cavalcanti1,2, David S. Monte1,2, Aline N. Alves1,2, Fábio R. Barros2, Marcus A. P. Santos2, and Luiz A. P. Santos1,2 1 Departamento de Energia Nuclear Universidade Federal de Pernambuco Av. Prof. Luiz Freire, 1000 50740-540 Recife, PE [email protected] 2 Centro Regional de Ciências Nucleares do Nordeste (CRCN-NE / CNEN) Av. Prof. Luiz Freire, 1 50740-540 Recife, PE [email protected] ABSTRACT Photodiode and phototransistor are the most frequently used devices for measuring ionizing radiation in medical applications. The cited devices have the operating principle well known, however the bipolar junction transistor (BJT) is not a typical device used as a detector for measuring some physical quantities for diagnostic radiation. In fact, a photodiode, for example, has an area about 10 mm square and a BJT has an area which can be more than 10 thousands times smaller. The purpose of this paper is to bring a new technique to estimate some physical quantities or parameters in diagnostic radiation; for example, peak kilovoltage (kVp), deep dose measurements. The methodology for each type of evaluation depends on the energy range of the radiation and the physical quantity or parameter to be measured. Actually, some characteristics of the incident radiation under the device can be correlated with the readout signal, which is a function of the electrical currents in the electrodes of the BJT: Collector, Base and Emitter. -
Designing Photodiode Amplifier Circuits with Opa128
® DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier RS achieves its 75fA maximum bias current without compro- mise. Using standard design techniques, serious perfor- I R C mance trade-offs were required which sacrificed overall P J J amplifier performance in order to reach femtoamp (fA = 10–15 A) bias currents. IP = photocurrent RJ = shunt resistance of diode junction CJ = junction capacitance UNIQUE DESIGN MINIMIZES R = series resistance PERFORMANCE TRADE-OFFS S FIGURE 1. Photodiode Equivalent Circuit. Small-geometry FETs have low bias current, of course, but FET size reduction reduces transconductance and increases noise dramatically, placing a serious restriction on perfor- Responsivity ≈ 109V/W 5pF mance when low bias current is achieved simply by making Bandwidth: DC to ≈ 30Hz input FETs extremely small. Unfortunately, larger geom- Offset Voltage ≈ ±485µV etries suffer from high gate-to-substrate isolation diode leak- HP 109Ω age (which is the major contribution to BIFET® amplifier 5082-4204 input bias current). Replacing the reverse-biased gate-to-substrate isolation di- 2 6 OPA128LM ode structure of BlFETs with dielectric isolation removes 3 this large leakage current component which, together with a 8 noise-free cascode circuit, special FET geometry, and ad- 109Ω vanced wafer processing, allows far higher Difet ® perfor- mance compared to BIFETs. FIGURE 2. High-Sensitivity Photodiode Amplifier. HOW TO IMPROVE PHOTODIODE AMPLIFIER PERFORMANCE An important electro-optical application of FET op amps is √ for photodiode amplifiers. The unequaled performance of eOUT = 4k TBR the OPA128 is well-suited for very high sensitivity detector k: Boltzman’s constant = 1.38 x 10–23 J/K ° designs. -
SDN136 Analog High Speed Optocoupler 1Mbd, Photodiode with Transistor Output
SDN136 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features The SDN136 is a high speed optocoupler consisting of an TTL Compatible infrared GaAs LED optically coupled through a high High Bit Rate: 1Mb/s isolation barrier to an integrated high speed transistor and Bandwidth: 2.0MHz photodiode. Open Collector Output High Isolation Voltage (5000VRMS) Separate access to the photodiode and transistor allow High Common Mode Interference Immunity users to reduce base-collector capacitance, enabling much RoHS / Pb-Free / REACH Compliant higher switching speeds. Signals with frequencies of up to 2.0MHz can be switched, giving the SDN136 a much broader application range than traditional optocouplers. Agency Approvals The SDN136 comes standard in an 8 pin DIP package. UL / C-UL: File # E201932 Applications VDE: File # 40035191 (EN 60747-5-2) High Speed Logic Ground Isolation Replace Slower Speed Optocouplers Absolute Maximum Ratings Line Receivers Power Transistor Isolation Pulse Transformer Replacement The values indicated are absolute stress ratings. Functional Switch Mode Power Supplies operation of the device is not implied at these or any High Voltage Insulation conditions in excess of those defined in electrical Ground Isolation – Analog Signals characteristics section of this document. Exposure to absolute Maximum Ratings may cause permanent damage to the device and may adversely affect reliability. Schematic Diagram Storage Temperature …………………………..-55 to +125°C Operating Temperature …………………………-40 -
Photovoltaic Couplers for MOSFET Drive for Relays
Photocoupler Application Notes Basic Electrical Characteristics and Application Circuit Design of Photovoltaic Couplers for MOSFET Drive for Relays Outline: Photovoltaic-output photocouplers(photovoltaic couplers), which incorporate a photodiode array as an output device, are commonly used in combination with a discrete MOSFET(s) to form a semiconductor relay. This application note discusses the electrical characteristics and application circuits of photovoltaic-output photocouplers. ©2019 1 Rev. 1.0 2019-04-25 Toshiba Electronic Devices & Storage Corporation Photocoupler Application Notes Table of Contents 1. What is a photovoltaic-output photocoupler? ............................................................ 3 1.1 Structure of a photovoltaic-output photocoupler .................................................... 3 1.2 Principle of operation of a photovoltaic-output photocoupler .................................... 3 1.3 Basic usage of photovoltaic-output photocouplers .................................................. 4 1.4 Advantages of PV+MOSFET combinations ............................................................. 5 1.5 Types of photovoltaic-output photocouplers .......................................................... 7 2. Major electrical characteristics and behavior of photovoltaic-output photocouplers ........ 8 2.1 VOC-IF characteristics .......................................................................................... 9 2.2 VOC-Ta characteristic ........................................................................................ -
Light Conversion, S/N Characteristics of X-Ray Phosphor Screens
Light conversion, S/N characteristics of x-ray phosphor screens Item Type text; Thesis-Reproduction (electronic) Authors Lum, Byron Kwai Chinn Publisher The University of Arizona. Rights Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. Download date 28/09/2021 05:29:31 Link to Item http://hdl.handle.net/10150/557456 LIGHT CONVERSION, S/N CHARACTERISTICS OF X-RAY PHOSPHOR SCREENS by Byron Kwai Chinn Lum A Thesis Submitted To the Committee on COMMITTEE ON OPTICAL SCIENCES (GRADUATE) In Partial Fulfillment of the Requirements for the Degree of MASTER OF SCIENCE In the Graduate College THE UNIVERSITY OF ARIZONA 19 8 0 STATEMENT BY AUTHOR This thesis has been submitted in partial fulfillment of re quirements for an advanced degree at The University of Arizona and is deposited in the University Library to be made available to borrowers under rules of the Library. Brief quotations from this thesis are allowable without special permission, provided that accurate acknowledgment of source is made. Requests for permission for extended quotation from or reproduction of this manuscript in whole or in part may be granted by the head of the major department or the Dean of the Graduate College when in his judg ment the proposed use of the material is in the interests of scholar ship. In all other instances, however, permission must be obtained from the author. -
(PPS) • CMOS Photodiode Active Pixel Sensor (APS) • Photoga
Lecture Notes 4 CMOS Image Sensors CMOS Passive Pixel Sensor (PPS) • Basic operation ◦ Charge to output voltage transfer function ◦ Readout speed ◦ CMOS Photodiode Active Pixel Sensor (APS) • Basic operation ◦ Charge to output voltage transfer function ◦ Readout speed ◦ Photogate and Pinned Diode APS • Multiplexed APS • EE 392B: CMOS Image Sensors 4-1 Introduction CMOS image sensors are fabricated in \standard" CMOS technologies • Their main advantage over CCDs is the ability to integrate analog and • digital circuits with the sensor Less chips used in imaging system ◦ Lower power dissipation ◦ Faster readout speeds ◦ More programmability ◦ New functionalities (high dynamic range, biometric, etc) ◦ But they generally have lower perofrmance than CCDs: • Standard CMOS technologies are not optimized for imaging ◦ More circuits result in more noise and fixed pattern noise ◦ In this lecture notes we discuss various CMOS imager architectures • In the following lecture notes we discuss fabrication and layout issues • EE 392B: CMOS Image Sensors 4-2 CMOS Image Sensor Architecture Word Pixel: Row Decoder Photodetector & Readout treansistors Bit Column Amplifiers/Caps Output Column Mux Readout performed by transferring one row at a time to the column • storage capacitors, then reading out the row, one (or more) pixel at a time, using the column decoder and multiplexer In many CMOS image sensor architectures, row integration times are • staggerred by the row/column readout time (scrolling shutter) EE 392B: CMOS Image Sensors 4-3 CMOS Image Sensor -
Amplified Photodetector User's Guide
AMPLIFIED PHOTODETECTOR USER’S GUIDE Thank you for purchasing your Amplified Photodetector. This user’s guide will help answer any questions you may have regarding the safe use and optimal operation of your Amplified Photodetector. TABLE OF CONTENTS I. Amplified Photodetector Overview ................................................................................................................. 1 II. Operation of your Amplified Photodetector .................................................................................................... 1 III. Troubleshooting ............................................................................................................................................... 2 IV. Drawings: Amplified Photodetectors .............................................................................................................. 2 V. Specifications: Amplified Photodetectors ....................................................................................................... 3 VI. Schematics: Amplified Photodetectors ............................................................................................................ 3 VII. Glossary of Terms .......................................................................................................................................... 4 I. Amplified Photodetector Overview The Amplified Photodetectors contain PIN photodiodes that utilize the photovoltaic effect to convert optical power into an electrical current. Figure 1 below identifies the main elements of -
Photodiode Arbind Kumar Mallik Department of Physics, Tribhuwan Multiple Campus, Palpa, Nepal [email protected]
Photodiode Arbind Kumar Mallik Department of Physics, Tribhuwan Multiple Campus, Palpa, Nepal [email protected] Abstract:- Light detection is important for many types of electronic instruments. One of the most important of these light detecting tools is the photodiode. These tools are present in dozens of electronic devices. Photodiodes are semi-conductors that convert light into electrical voltage. This turns light signals into electrical input instructions that the machine can understand. Infect photodiodes are optoelectronic devices, meaning that they create electricity when light shines on them, similar to photovoltaic cells. In this article a brief about photodiodes are discussed. Keywords:- photodiode, semiconductor, valence band, depletion region, p-n photodiode, p-i-n photodiode, quantum efficiency, dark current, photovoltaic mode, photoconductive mode. 1. INTRODUCTION LED with anode and cathode leads projecting out In semiconductors, electrons are released from from the case. But a photodiode is the exact opposite the valence band, when energy is supplied to such of an LED in function. Instead of emitting light, the electrons. This energy can be supplied in the form photodiode absorbs light and produces current. A of heat or through an accelerating voltage. Light photodiode and its symbol are shown in fig-1(a) and energy can also be used to produce the current in fig-1(b) respectively. semiconductors. A junction diode made from light (or photo) sensitive semiconductor is called a photodiode. Photodiode technology developments came out of the basic developments of the PN junction diode that started in the 1940s in earnest. Applications for the use of the PN junction diode were found outside the basic use of rectifying signals.