Development of Flexible and Functional Sequins Using Subtractive Technology and 3D Printing for Embroidered Wearable Textile Applications
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A Flexible Solution-Processed Memristor
This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE ELECTRON DEVICE LETTERS 1 A Flexible Solution-Processed Memristor Nadine Gergel-Hackett, Member, IEEE, Behrang Hamadani, Barbara Dunlap, John Suehle, Senior Member, IEEE, Curt Richter, Senior Member, IEEE, Christina Hacker, and David Gundlach, Member, IEEE Abstract—A rewriteable low-power operation nonvolatile physi- cally flexible memristor device is demonstrated. The active compo- nent of the device is inexpensively fabricated at room temperature by spinning a TiO2 sol gel on a commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10 000 : 1, is nonvolatile for over 1.2 × 106 s, requires less than 10 V, and is still operational after being physically flexed more than 4000 times. Index Terms—Flexible electronics, flexible memory, memristor, sol gel, titanium dioxide. I. INTRODUCTION E HAVE fabricated a physically flexible solution- W processed device that exhibits electrical behavior con- Fig. 1. Flexible polymer sheet patterned with four rewriteable nonvolatile sistent with that of a memristor, a memory device recently flexible TiO2 sol gel memory devices with cross-bar aluminum contacts. The experimentally demonstrated and proposed to be the miss- inset is a side view cartoon of the flexible TiO2 device structure. ing fourth basic circuit element [1], [2]. Although electrical make our flexible memristor device a prime candidate for use switching behavior has been observed from organic mono- in inexpensive flexible lightweight portable electronics, such as layers and metal oxides from as early 1968 [3]–[11], the disposable sensors [13]–[17]. -
Phys 586 Laboratory Lab11
Phys 586 Laboratory Lab11 Goal: In this lab you will make measurements with a photodiode. While not the same type of diode used in diode arrays for radiation planning or microstrip detectors in high energy physics, many of the basic device characteristics are the same. Additionally, photodiodes are used in x-ray imaging (along with a scintillator layer) and avalanche photodiodes find application in high energy physics. Reading: See Photodiode Characteristics article in the Readings. Lab: 1. Construct the LED circuit shown in Figure 1. a) Is the LED forward or reverse biased? The LED is forward biased. b) What is the purpose of the resistor? The value of the resistor is chosen so that the specified LED operating current results in the desired LED voltage drop. The value that this resistor should have can be determined using Kirchhoff’s loop rule and Ohm’s Law. Vary the voltage and convince yourself the brightness of the LED changes. Note the longer leg on the LED is the anode. 1 2. Measure the current through the LED and the voltage across the LED for LED supply voltages of 2.5, 5, 8, 10, 13, 15, 18 and 20V. LED LED LED Supply Voltage Current Voltage (V) (V) (mA) 2.5 1.67 2.46 5.01 1.76 4.91 8.01 1.82 7.8 10.05 1.85 9.9 13 1.9 12.83 15 1.92 14.9 18 1.96 17.82 20 1.99 20.1 Circuit 1: LED Current vs LED Voltage 25 20 15 10 LED Current (mA) 5 0 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 LED Voltage (V) 2 3. -
Workshop on Computational Physics and Materials Science
Workshop on Computational Physics and Materials Science: Total Energy and Force Methods 2020 Donostia-San Sebastián, Spain January 8-10, 2020 Institutional support and funding Preface This workshop is organized within the well-established “Total Energy and Force” conference series, which is held at ICTP in Trieste every odd year, and at a different place in the world every even year. The previous most recent workshops of this series outside Trieste took place in Barcelona (2012), Lausanne (2014), Luxembourg (2016) and Cambridge (2018). The main objective of this event is to identify new developments and topics in the field of electronic-structure methods from the first-principles perspective, their diverse applications, and its mathematical foundations. As such, it provides a great opportunity to assemble a wide range of leading scientists working on different aspects of computational material science. The workshop aims to cover the following topics: • Electron-phonon • Dielectrics • 2D materials • Correlation effects • Superconductivity • Topological materials • Transport properties • Excitations Organizing committee • Aran Garcia-Lekue, DIPC • Ivo Souza, UPV/EHU • Ion Errea, UPV/EHU Scientific advisory board • O. Akin-Ojo, University of Ibadan • E. Artacho, University of Cambridge & Nanogune • W. Andreoni, Ecole Polytechnique Fédérale de Lausanne • S. Biermann, Ecole Polytechnique, Palaiseau • R. Car, Princeton University • C. Filippi, University of Twente • M. Finnis, Imperial College • R. Gebauer, International Centre for Theoretical Physics • X.-G. Gong, Fudan University • J. Ihm, Seoul National University • E. Koch, Forschungszentrum Jülich • G. Kresse, University of Vienna • R. M. Martin, Stanford University • F. Mauri, University “La Sapienza” • A. Mostofi, Imperial College London • S. Narasimhan, JNCASR Bangalore • J. B. -
Photodiode and LIGHT EMITTING DIODE
Photodiode and LIGHT EMITTING DIODE Presentation by JASWANT KUMAR ROLL NO.-12 rd IT(3 SEM.) 1 About LEDs (1/2) • A light emitting diode (LED) is essentially a PN junction opto- semiconductor that emits a monochromatic (single color) light when operated in a forward biased direction. • LEDs convert electrical energy into light energy. LED SYMBOL 2 ABOUT LEDS (2/2) • The most important part of a light emitting diode (LED) is the semi-conductor chip located in the center of the bulb as shown at the right. • The chip has two regions separated by a junction. • The junction acts as a barrier to the flow of electrons between the p and the n regions. 3 LED CIRCUIT • In electronics, the basic LED circuit is an electric power circuit used to power a light-emitting diode or LED. The simplest such circuit consists of a voltage source and two components connect in series: a current-limiting resistor (sometimes called the ballast resistor), and an LED. Optionally, a switch may be introduced to open and close the circuit. The switch may be replaced with another component or circuit to form a continuity tester. 4 HOW DOES A LED WORK? • Each time an electron recombines with a positive charge, electric potential energy is converted into electromagnetic energy. • For each recombination of a negative and a positive charge, a quantum of electromagnetic energy is emitted in the form of a photon of light with a frequency characteristic of the semi- conductor material. 5 Mechanism behind photon emission in LEDs? MechanismMechanism isis “injection“injection Electroluminescence”.Electroluminescence”. -
Nextflex Project Call 4.0 Guidebook
PROJECT CALL 4.0 Release Date: August 6, 2018 TABLE OF CONTENTS 1. FHE Definition 2. Introduction and Background 3. FHE Roadmap 4.0 4. Project Call Topics 4.1. Manufacturing Thrust Area (MTA) 4.2. Technology Platform Demonstrator (TPD) 5. Proposal Submission Process 5.1. Proposal Format Guidelines 5.2. Project Call 4.0 Timeline 5.3. Pre-Proposal Guidelines and Table of Contents 5.4. Full Proposal Guidelines and Table of Contents 6. Administrative Topics 6.1. Confidential Information 6.2. Financial and Cost Share Requirements 6.3. Work Requirements 6.4. Membership Requirements 7. Proposal Evaluation Criteria 7.1. General Overview and Guidelines 8. Contact Information 9. Reference Documents 10. Glossary of Terms Appendix A: Cover Sheet Template Appendix B: Instructions for Filling Out Proposal Cost Calculations Excel Workbook Appendix C: Pre-Proposal Evaluation Criteria Appendix D: Full Proposal Evaluation Criteria PROJECT CALL 4.0 SECTION 1. FHE DEFINITION This section is provided as an introduction to potential members of NextFlex® (“Institute” or “the Institute”) who may not be familiar with Flexible Hybrid Electronics (FHE) and the scope of our efforts in the Manufacturing USA network. NextFlex describes FHE as the intersection of additive circuitry, passive devices, and sensor systems that may be manufactured using printing methods (sometimes referred to as printed electronics) and thin flexible silicon chips or multichip interposer structures. These devices take advantage of the power of silicon and the economies and unique capabilities of printed circuitry to form a new class of devices for IoT, medical, robotics, consumer and communication markets. FHE devices conform to any shape, but are also bendable, twistable, and stretchable. -
Front Cover Sis V2.Indd 1 24/06/2014 11:56 LITHOGRAPHY SOLUTIONS for HIGH-VOLUME MANUFACTURING
Volume 36 Issue 2 2014 @siliconsemi www.siliconsemiconductor.net Directed self assembly Wafer cleaning legislation Innovation in materials recovery Getting more out of graphene Chip spending increases MEMS microphones Features, News Review, Industry Analysis, Research News and much more. Free Weekly E News round up , go to www.siliconsemiconductor.net Front Cover SiS v2.indd 1 24/06/2014 11:56 LITHOGRAPHY SOLUTIONS FOR HIGH-VOLUME MANUFACTURING Advanced Packaging for Logic and Memory Ultra-High Throughput and Productivity Mid-End and Back-End Interconnect Applications GET IN TOUCH to discuss your manufacturing needs www.EVGroup.com Untitled-1 1 26/03/2014 12:11 executiveview by Rich Rogoff, Vice President and General Manager, Lithography Systems Group, Rudolph Technologies, Inc. We must think “outside of the box” for new approaches in advanced packaging AS SEMICONDUCTOR DEVICES have continued to shrink Moving from round wafers to rectangular substrates in back- in size and grow in complexity, manufacturers have had to end advanced packaging saves corner space, delivering a develop advanced packaging techniques to accommodate roughly 10% improvement in surface utilization. In the case of the rapidly increasing number and density of connections lithography, the larger size of the substrate and the improved required to communicate with the outside world. Often these fit between the reticle and substrate can reduce the handling technologies have developed as adaptations of front-end and processing overhead by a factor of five. These productivity methods. While there is certainly value to be found improvements more than offset any potential reduction in using these well characterized processes, in throughput resulting from an increase in the number of we must be careful not to carry along old alignment points required for these larger substrates. -
LED Circuit and Device Physics 120 Pts Objective: Meas
Applied Quantum Mechanics for Electrical Engineers Workshop III – LED Circuit and Device Physics 120 pts Objective: Measure the voltage drop across an LED in a simple circuit, demonstrate that the voltage drop is proportional to the band gap of the semiconductor material, and analyze the behavior of the circuit in terms of the device physics of the PN junction. Background: A light emitting diode (LED) is a device that is designed by fabricating a PN junction or diode as illustrated in Figure 1. Figure 1. Schematic of LED and illustration of carrier movement resulting in emission of light. Image: http://blog.ucsusa.org/wp-content/uploads/2014/10/UCS-LED-how-it-works-graphic.gif A simple PN junction can be fabricated by growing a p-type material on top of an n-type material, or by doping an n-type material with sufficient p-type dopants so that the surface becomes p-type. The energy band diagram for a PN Junction under forward bias conditions is illustrated in Figure 2, along with a schematic of the circuit under forward bias. Figure 2. LED circuit and PN Junction energy band diagram illustrating carrier movement under forward bias. Image: http://www.vit.ac.in/onlinelab/m9.aspx The application of a forward bias to the circuit results in a decrease in the barrier to electron movement from the n-side to the p-side. Likewise, the barrier of hole movement from the p- side to the n-side is also reduced. Thus, majority carriers from each side are able to cross the energy barrier. -
Eindhoven University of Technology MASTER Concept Design for Reel To
Eindhoven University of Technology MASTER Concept design for reel to reel flex foil handling on a component mounting machine Wakker, R. Award date: 2005 Link to publication Disclaimer This document contains a student thesis (bachelor's or master's), as authored by a student at Eindhoven University of Technology. Student theses are made available in the TU/e repository upon obtaining the required degree. The grade received is not published on the document as presented in the repository. The required complexity or quality of research of student theses may vary by program, and the required minimum study period may vary in duration. General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. • Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain Concept design for reel to reel flex foil handling on a component mounting machine DCT 2005.93 Remko Wakker s454659 Concept design for reel to reel flex foil handling on a component mounting machine Master thesis committee: prof.dr.ir.M.Steinbuch chairmain dr.ir.P.C.J.N.Rosielle, coach TU/e ing.W.Wesseling, coach Assembl¶eon B.V. ir.F.G.A. Homburg TU/e TECHNISCHE UNIVERSITEIT EINDHOVEN DEPARTMENT OF MECHANICAL ENGINEERING SECTION CONTROL SYSTEMS TECHNOLOGY CONSTRUCTIONS AND MECHANISMS Eindhoven, 24th June 2005 Preface and acknowledgements This report describes the concept design for a reel to reel flex foil production line, that is developed during my Master thesis project at the Technische Universiteit Eindhoven, faculty Mechanical engineering, group Constructions and Mechanisms. -
Project Call 6.0 Guidebook B
PROJECT CALL 6.0 GUIDEBOOK Online Cover Sheet Submission Deadline: 3/29/2021 Proposal Submission Deadline: 4/6/2021 Original Release Date: February 15, 2021 v1.0 PROJECT CALL 6.0 PROJECT CALL 6.0 TABLE OF CONTENTS Preface 3 SECTION 1. FHE Definition ................................................................................................................ 3 SECTION 2. Introduction and Background .......................................................................................... 3 SECTION 3. FHE Roadmap – 2020 Update ........................................................................................ 6 SECTION 4. Project Call Topics .......................................................................................................... 7 4.1 NextFlex-Funded Topics .............................................................................................................. 8 4.2 DoD Agency-Funded Topics ...................................................................................................... 14 SECTION 5. PROPOSAL SUBMISSION PROCESS ......................................................................... 15 5.1 Project Call 6.0 Timeline ............................................................................................................ 15 5.2 Proposal Format Guidelines ...................................................................................................... 16 5.3 Proposal Guidelines ................................................................................................................. -
Amorphous Metal Oxide Semiconductor Thin Film Transistors for Printed Electronics
New Jersey Institute of Technology Digital Commons @ NJIT Theses Electronic Theses and Dissertations Fall 12-31-2018 Amorphous metal oxide semiconductor thin film transistors for printed electronics Mustafa Mohammad Yousef New Jersey Institute of Technology Follow this and additional works at: https://digitalcommons.njit.edu/theses Part of the Electrical and Electronics Commons Recommended Citation Yousef, Mustafa Mohammad, "Amorphous metal oxide semiconductor thin film transistors for printed electronics" (2018). Theses. 1637. https://digitalcommons.njit.edu/theses/1637 This Thesis is brought to you for free and open access by the Electronic Theses and Dissertations at Digital Commons @ NJIT. It has been accepted for inclusion in Theses by an authorized administrator of Digital Commons @ NJIT. For more information, please contact [email protected]. Copyright Warning & Restrictions The copyright law of the United States (Title 17, United States Code) governs the making of photocopies or other reproductions of copyrighted material. Under certain conditions specified in the law, libraries and archives are authorized to furnish a photocopy or other reproduction. One of these specified conditions is that the photocopy or reproduction is not to be “used for any purpose other than private study, scholarship, or research.” If a, user makes a request for, or later uses, a photocopy or reproduction for purposes in excess of “fair use” that user may be liable for copyright infringement, This institution reserves the right to refuse to accept -
LUXEON Illumination Leds Circuit Design and Layout Practices to Minimize Electrical Stress
ILLUMINATION LUXEON Illumination LEDs Circuit Design and Layout Practices to Minimize Electrical Stress Introduction LED circuits operating in the real world can be subjected to various abnormal electrical overstress situations. Among the most common are: • Isolation test during validation or production of the luminaire (“hi-pot test”) • Lightning strikes and line transients • Hot-swapping of LED circuits (disconnecting and reconnecting an LED circuit board to the driver while the driver remains powered up) • Driver failures • ESD (Electro-Static Discharge) Scope This paper presents background information on some of these overstress modes and discusses recommendations to minimize the potentially destructive effects of electrical overstress on LEDs. AB06 LUXEON LEDs Application Brief ©2016 Lumileds Holding B.V. All rights reserved. Table of Contents Scope . 1 1 . Electrical Overstress . 3 2 . Isolation Test Requirements . 3 3 . Isolation Test on an LED Board . 4 4 . LUXEON Rebel LED Circuit Model on a Board . 5 5 . Electrical Stress Simulation during Isolation Test . 6 6 . Protection Circuits . 8 7 . High Voltage Drivers . 10 8 . Lightning Strikes and Line Transients . 11 9 . Recommendations . 11 About Lumileds . 12 AB06 LUXEON LEDs Application Brief 20170605 ©2017 Lumileds Holding B.V. All rights reserved. 2 1. Electrical Overstress Electrical Overstress (EOS) can present itself to an LED array in two forms, either as excess voltage or excess current. Because voltage and current are interrelated, it is not always possible to identify whether a high voltage or high current caused a failure. Currents can flow through an LED array in two ways: differential mode and common mode (see Figure 1). Differential mode currents can be very destructive. -
Antireflective Coatings
materials Review Antireflective Coatings: Conventional Stacking Layers and Ultrathin Plasmonic Metasurfaces, A Mini-Review Mehdi Keshavarz Hedayati 1,* and Mady Elbahri 1,2,3,* 1 Nanochemistry and Nanoengineering, Institute for Materials Science, Faculty of Engineering, Christian-Albrechts-Universität zu Kiel, Kiel 24143, Germany 2 Nanochemistry and Nanoengineering, Helmholtz-Zentrum Geesthacht, Geesthacht 21502, Germany 3 Nanochemistry and Nanoengineering, School of Chemical Technology, Aalto University, Kemistintie 1, Aalto 00076, Finland * Correspondence: [email protected] (M.K.H.); mady.elbahri@aalto.fi (M.E.); Tel.: +49-431-880-6148 (M.K.H.); +49-431-880-6230 (M.E.) Academic Editor: Lioz Etgar Received: 2 May 2016; Accepted: 15 June 2016; Published: 21 June 2016 Abstract: Reduction of unwanted light reflection from a surface of a substance is very essential for improvement of the performance of optical and photonic devices. Antireflective coatings (ARCs) made of single or stacking layers of dielectrics, nano/microstructures or a mixture of both are the conventional design geometry for suppression of reflection. Recent progress in theoretical nanophotonics and nanofabrication has enabled more flexibility in design and fabrication of miniaturized coatings which has in turn advanced the field of ARCs considerably. In particular, the emergence of plasmonic and metasurfaces allows for the realization of broadband and angular-insensitive ARC coatings at an order of magnitude thinner than the operational wavelengths. In this review, a short overview of the development of ARCs, with particular attention paid to the state-of-the-art plasmonic- and metasurface-based antireflective surfaces, is presented. Keywords: antireflective coating; plasmonic metasurface; absorbing antireflective coating; antireflection 1.