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Fundamentals of Microelectronics Chapter 3 Diode Circuits
9/17/2010 Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box 1 Chapter 3 Diode Circuits 3.1 Ideal Diode 3.2 PN Junction as a Diode 3.3 Applications of Diodes 2 1 9/17/2010 Diode Circuits After we have studied in detail the physics of a diode, it is time to study its behavior as a circuit element and its many applications. CH3 Diode Circuits 3 Diode’s Application: Cell Phone Charger An important application of diode is chargers. Diode acts as the black box (after transformer) that passes only the positive half of the stepped-down sinusoid. CH3 Diode Circuits 4 2 9/17/2010 Diode’s Action in The Black Box (Ideal Diode) The diode behaves as a short circuit during the positive half cycle (voltage across it tends to exceed zero), and an open circuit during the negative half cycle (voltage across it is less than zero). CH3 Diode Circuits 5 Ideal Diode In an ideal diode, if the voltage across it tends to exceed zero, current flows. It is analogous to a water pipe that allows water to flow in only one direction. CH3 Diode Circuits 6 3 9/17/2010 Diodes in Series Diodes cannot be connected in series randomly. For the circuits above, only a) can conduct current from A to C. CH3 Diode Circuits 7 IV Characteristics of an Ideal Diode V V R = 0⇒ I = = ∞ R = ∞⇒ I = = 0 R R If the voltage across anode and cathode is greater than zero, the resistance of an ideal diode is zero and current becomes infinite. -
VOLTAGE REGULATORS 1. Zener Controlled Transistor Voltage Regulator
VOLTAGE REGULATORS A voltage regulator is a voltage stabilizer that is designed to automatically stabilize a constant voltage level. A voltage regulator circuit is also used to change or stabilize the voltage level according to the necessity of the circuit. Thus, a voltage regulator is used for two reasons:- 1. To regulate or vary the output voltage of the circuit. 2. To keep the output voltage constant at the desired value in-spite of variations in the supply voltage or in the load current. To know more on the basics of this subject, you may also refer Regulated Power Supply. Voltage regulators find their applications in computers, alternators, power generator plants where the circuit is used to control the output of the plant. Voltage regulators may be classified as electromechanical or electronic. It can also be classified as AC regulators or DC regulators. We have already explained about IC Voltage Regulators. Electronic Voltage Regulator All electronic voltage regulators will have a stable voltage reference source which is provided by the reverse breakdown voltage operating diode called zener diode. The main reason to use a voltage regulator is to maintain a constant dc output voltage. It also blocks the ac ripple voltage that cannot be blocked by the filter. A good voltage regulator may also include additional circuits for protection like short circuits, current limiting circuit, thermal shutdown, and over voltage protection. Electronic voltage regulators are designed by any of the three or a combination of any of the three regulators given below. 1. Zener Controlled Transistor Voltage Regulator A zener controlled voltage regulator is used when the efficiency of a regulated power supply becomes very low due to high current. -
ON Semiconductor Is
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. -
Schottky Diodes Selection Guide
SCHOTTKY DIODES ( HOT - CARRIER ) pag A 1 Schottky diodes selection guide For HIGH SENSITIVITY , ZERO-BIAS or LOW BARRIER applications --- for lab detectors as RF detector with sweep generator --- RF fields detector, electromagnetic pollution, TAG , etc… --- passive or active mobile phones and bugs detector diode TSS Glass SMD Ceramic or special (tangential sensitivity) case case case HSMS 2850 - 2851 -59 dBm @ 2 GHz SMS 7630 -55 dBm @ 10 GHz these are the much sensitive diodes at usable up to 18 GHz ZERO BIAS -53 dBm @ 2 GHz ND 4991 - 1SS276 DDC2353 -55 dBm @ 6 GHz LOW BARRIER up to 20 GHz from -54 dBm to -52 dBm all BAT 15… types are LOW BARRIER up to 24 GHz depending on type high sensitivity vatious types available -56 dBm @ 2 GHz with bias HP 5082-2824 HSMS.282…series low barrier, up to millimeter freq. beam lead version version with leads of the famous 1N821 point-contact 1N21 - 23 silicon , up to 5 GHz NOTE : high sensitivity silicon or germanium diodes for detectors are available too, see VARIOUS DIODES for : RECEIVING MIXERS - RF DETECTORS - SAMPLING freq. config. glass case SMD or plastic case ceramic case up to 500 MHz BAT 42 - 43 - 46 - 48 - 85 - 86 BAS 40-…- BAT 64-.... 5082.2800 - BAT 45 - 82 - 83 single HSMS 28.... , BAT 68 up to HSCH 1001 2 GHz pair 5082.2804 BAS 70... , HSMS 28... quad 5082.2836 ND 487C1-3R 5082.2810, 2811, 2817 2824, up to HSMS 2810 , 2820 single 2835, 2900, MA4853 ND4991 BAT 17 , BAT 68 3 - 5 1SS154 ,BA 481, QSCH 5374 pair 5082.2826, 2912 HSMS 28…. -
Power Supply Using Power Transistors
Section F6: Power Supply Using Power Transistors In this section of our studies we will be looking at the design of power supplies using power transistors. We discussed the concepts of rectification and filtering using regular and zener diodes in Section B, and we are going to start this section with a twist on our previous work – adding a BJT. After this introduction using discrete transistors, we will be examining design approaches using integrated circuits – both the 7800 series of integrated circuit regulators and the LM317 adjustable regulator. Power Supply Using Discrete Components In Section B9 (3.4 of your text), we used the zener diode as the voltage-controlling device in the design of a regulated power supply. The figure to the right is a modified version of Figure 8.20 in your text, where the notation has been changed to correctly reproduce Figure 3.39. As we saw earlier, this is a fairly well behaved circuit that supplies a nearly constant output voltage over a wide range of currents. However, as we always must, we can do better. A better regulation may be obtained if the zener diode is connected to the base circuit of a power transistor in the EF (CC) configuration as shown below (Figure 8.21 of your text). In the configuration above, the transistor is referred to as a pass transistor. Because of the current amplifying properties of the BJT in the EF (CC)configuration, the current through the zener diode may be small. With the smaller current, there is little voltage drop across the diode resistance, which allows the zener to approximate an ideal constant voltage source. -
Chip Varistors Countermeasure for Surge Voltage and Static Electricity
Chip Varistors Countermeasure for surge voltage and static electricity AVR series Type: AVR-M AVRL Issue date: September 2013 • All specifications are subject to change without notice. • Conformity to RoHS Directive: This means that, in conformity with EU Directive 2002/95/EC, lead, cadmium, mercury, hexavalent chromium, and specific bromine-based flame retardants, PBB and PBDE, have not been used, except for exempted applications. (2/11) Varistors(SMD) Conformity to RoHS Directive Countermeasure for Surge Voltage and Static Electricity AVR Series AVR-M, AVRL Types Varistors are voltage dependent nonlinear resistive elements with a resistance that decreases rapidly when the voltage is over the constant value. Varistor is equivalent with Zener diode of two series connection. Therefore, do not have polarity. CURRENT vs. VOLTAGE CHARACTERISTICS EQUIVALENT CIRCUIT 2 Zener Diodes ) 10–1 A ( 10–2 Zener diode /Vz:6.8V –3 Positive direction 10 Chip varistor Current /V1mA:12V 10–4 A capacitance content 10–5 –18 –14–10–610–262 14 18 –10–5 –10–4 –10–3 Negative direction –10–2 –10–1 Voltage(V) THE EFFECT OF THE VARISTOR WITHOUT VARISTOR WITH VARISTOR A malfunction and failure of electronic equipment Suppress abnormal voltage by inserting varistor in a circuit ESD, Surge voltage ESD, Surge voltage Power line IC Power line IC Signal line Signal line Insert a varistor between a line and ground : Chip varistor • All specifications are subject to change without notice. 002-01 / 20130927 / e9c11_avr.fm (3/11) FEATURES INTERNAL STRUCTURE • No polarity, due to symmetrical current-voltage characteristics. Inner electrode Varistor body Equivalent to anode common type Zener diode. -
(Or Varicap) Diode
Radio and Electronics Cookbook 20 The varactor (or varicap) diode Introduction Many of the circuits for receivers and transmitters presented in this series rely upon the variable capacitor as a means of tuning. Another method of varying capacitance (without any moving parts) is provided by the varactor diode, sometimes called a varicap diode. This is a component which changes its capacitance as the voltage across it is varied. The details Figure 1 shows how a varactor diode might be connected to demonstrate its operation. Its symbol is that of an ordinary diode, with a capacitor symbol next to it. A variable voltage is applied across it in such a way that the diode is reverse-biased. This means that virtually no current passes through it – the positive voltage is applied to the cathode. Varactors are cheaper than variable capacitors, and they are tiny in comparison, very suitable for today’s miniature circuits. If A and B were connected across the tuning coil in a simple receiver (with a series capacitor to block the DC from the battery reaching the coil), the tuning operation would be accomplished by turning the knob on the 10 kilohm potentiometer. Varactors are available with different values, from less than 20 picofarad (pF) for VHF applications to 500 pF for medium-wave radios. They are Figure 1 The capacitance of the varicap diode (between A and B) increases as the voltage is reduced, using the variable resistor 64 A portable radio for medium waves tuned usually by voltages between 2 V and 9 V. For a real application of varactors, you should consult the circuit diagram of the Yearling 20 metre receiver, elsewhere in this book. -
J. W. Miller Company the Coil Forum March 1960
J. W. MILLER COMPANY-LOS ANGELES, CALIFORNIA-VOLUME 1, NUMBER 1 MARCH 1960 A TRANSISTOR FM RECEIVER With this issue, the J. W. Miller Company inaugurates a new publication devoted to the experimenter. Although coils, and their associated com ponents, are our business, we at Miller would like to supply our customers with timely information on circuits, theory to assist with your work or experiments, and data on how to select and use our coils wisely. We believe you will agree that THE COIL FORUM is indeed an appropriate nam~. www.SteamPoweredRadio.Com J. W. M I L L E R C O M P A N Y Recent advances in the state of the semiconductor from the collector back to the base through capacitor art have made it possible to construct a transistor Cl2 and the stage oscillates. Coil L3, along with the FM receiver which performs every bit as well as a tuning capacitor and circuit capacity, determines the vacuum tube version. VHF equipment places very frequency of oscillation, which is always 10. 7 me. strict demands on the transistors. They must be above the incoming signal frequency. Resistors R9 capable of constant amplification over the entire and Rl 1 provide bias and RIO is used for d.c. degener band being received, create a minimum of circuit ation. Transistor QlO and diode Xl are part of the drift, and provide maximum gain with a minimum automatic frequency control system and will be of stages. ' discussed later. All tuned circuits in the "front end" are tracked with a three-gang variable capacitor The excellent performance of the receiver to be (C3, 3-lOmmfd.) described is an outgrowth of the work done by Philco Corporation on their transistor "Safari" tele The i.f. -
PIN Diode Drivers Literature Number: SNVA531
PIN Diode Drivers Literature Number: SNVA531 PIN Diode Drivers National Semiconductor PIN Diode Drivers Application Note 49 March 1986 INTRODUCTION The charge control model of a diode1,2 leads to the charge The DH0035/DH0035C is a TTL/DTL compatible, DC continuity equation given in Equation (1). coupled, high speed PIN diode driver. It is capable of deliver- ing peak currents in excess of one ampere at speeds up to 10 MHz. This article demonstrates how the DH0035 may be (1) applied to driving PIN diodes and comparable loads which = require high peak currents at high repetition rates. The sa- where: Q charge due excess minority carriers lient characteristics of the device are summarized in Table 1. τ = mean lifetime of the minority carriers Equation (1) implies a circuit model shown in Figure 2. Under TABLE 1. DH0035 Characteristics steady conditions hence: Parameter Conditions Value Differential Supply 30V Max. (2) Voltage (V+ −V−) where: I = steady state “ON” current. Output Current 1000 mA Maximum Power 1.5W tdelay PRF = 5.0 MHz 10 ns + − trise V −V =20V 15 ns 10% to 90% + − tfall V −V =20V 10 ns 90% to 10% PIN DIODE SWITCHING REQUIREMENTS Figure 1 shows a simplified schematic of a PIN diode switch. AN008750-2 Typically, the PIN diode is used in RF through microwave fre- I = Total Current quency modulators and switches. Since the diode is in shunt IDC = SS Control Current with the RF path, the RF signal is attenuated when the diode iRF = RF Signal Current is forward biased (“ON”), and is passed unattenuated when FIGURE 2. -
Driver Circuit for High-Power PIN Diode Switches
APPLICATION NOTE Driver Circuit for High-Power PIN Diode Switches Introduction The Skyworks High-Power Pin Diode Switch Driver Circuit is a TTL/DTL compatible, DC coupled, high-speed PIN diode bias controller. Part No. EN33-X273 This driver reference design is designed to operate with the Skyworks series of high-power SPDT PIN diode switches. These include: SKY12207-306LF SKY12207-478LF SKY12208-306LF SKY12208-478LF SKY12209-478LF SKY12210-478LF SKY12211-478LF SKY12212-478LF SKY12213-478LF SKY12215-478LF Features High drive current capability (± 50 mA to ± 100 mA) This driver is designed to provide forward currents up to 100 mA 28 V back bias in off state for each diode, and 28 V reverse bias. It is designed for SPDT switches operating with a CW input a power up to 100 W. The Fast switching speed approximately 142 nS driver utilizes fast switching NPN transistors and Skyworks Low current consumption discrete PIN diodes. The driver is designed to utilize a VDD set to Single TTL logic input +28 V, but could operate with voltages as low as +5 V. Skyworks GreenTM products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of GreenTM, document number SQ04–0074. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 203950A • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice. • March 28, 2016 1 APPLICATION NOTE • DRIVER CIRCUIT FOR HIGH-POWER PIN DIODE SWITCHES Table 1. Absolute Maximum Ratings1 Parameter Conditions ANT (+5 V) –0.5 V to 7 V RXTX (+28 V) –0.5 V to 40 V VLGC –0.5 V to 7 V RX drive current 150 mA TX drive current 150 mA Operational temperature –40 to +85°C Storage temperature –55 to +125°C 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. -
Michael J. Chudobiak Ii
New Approaches For Designing High Voltage, High Current Silicon Step Recovery Diodes for Pulse Sharpening Applications by Michael John Chudobiak, B.Sc. (Hons.) A thesis submitted to the Faculty of Graduate Studies and Research in partial fulfillment of the requirements for the degree of Doctor of Philosophy Ottawa-Carleton Institute for Electrical Engineering Department of Electronics Carleton University Ottawa, Ontario, Canada July 30, 1996 Copyright 1996, Michael J. Chudobiak ii Acceptance Sheet iii Abstract Two promising new approaches for designing step recovery diodes (SRDs) for operation at voltages of several hundred volts are considered in this thesis. An entirely new type of step recovery diode is presented, which can operate with reverse voltages of several hundred volts and which exhibits exceptionally long lifetimes of several microseconds. These diodes have been named “wide field step recovery diodes (WFSRDs)”. Experimental results for two batches of fabricated devices are presented for 300 V operation into a 50 Ω load. Pulse sharpening operation with rise times as low as 0.9 ns and storage times as large as 9 ns has been observed for fabricated diodes with effective carrier lifetimes of 4500 ns. Pulse sharpening operation has also been observed with rise times as low as 0.6 ns and storage times as large as 30 ns for fabricated diodes with effective carrier lifetimes of 950 ns. These diodes have a diffused p-π-n structure. A comprehensive design theory is developed by considering the nature of the reverse transient in the diode. A method of calculating the breakdown voltage of diffused structures without resorting to simulations is also presented. -
Capacitor & Capacitance
CAPACITOR & CAPACITANCE - TYPES Capacitor types Listed by di-electric material. A 12 pF 20 kV fixed vacuum capacitor Vacuum : Two metal, usually copper, electrodes are separated by a vacuum. The insulating envelope is usually glass or ceramic. Typically of low capacitance - 10 - 1000 pF and high voltage, up to tens of kilovolts, they are most often used in radio transmitters and other high voltage power devices. Both fixed and variable types are available. Vacuum variable capacitors can have a minimum to maximum capacitance ratio of up to 100, allowing any tuned circuit to cover a full decade of frequency. Vacuum is the most perfect of dielectrics with a zero loss tangent. This allows very high powers to be transmitted without significant loss and consequent heating. Air : Air dielectric capacitors consist of metal plates separated by an air gap. The metal plates, of which there may be many interleaved, are most often made of aluminium or silver-plated brass. Nearly all air dielectric capacitors are variable and are used in radio tuning circuits. Metallized plastic film: Made from high quality polymer film (usually polycarbonate, polystyrene, polypropylene, polyester (Mylar), and for high quality capacitors polysulfone), and metal foil or a layer of metal deposited on surface. They have good quality and stability, and are suitable for timer circuits. Suitable for high frequencies. Mica: Similar to metal film. Often high voltage. Suitable for high frequencies. Expensive. Excellent tolerance. Paper: Used for relatively high voltages. Now obsolete. Glass: Used for high voltages. Expensive. Stable temperature coefficient in a wide range of temperatures. Ceramic: Chips of alternating layers of metal and ceramic.