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Floating-Gate Transistor Photodetector University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Mechanical & Materials Engineering Faculty Mechanical & Materials Engineering, Publications Department of 10-10-2017 Floating-Gate Transistor Photodetector Jinsong Huang University of Nebraska-Lincoln, [email protected] Yongbo Yuan Lincoln, NE Follow this and additional works at: https://digitalcommons.unl.edu/mechengfacpub Part of the Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, and the Other Mechanical Engineering Commons Huang, Jinsong and Yuan, Yongbo, "Floating-Gate Transistor Photodetector" (2017). Mechanical & Materials Engineering Faculty Publications. 393. https://digitalcommons.unl.edu/mechengfacpub/393 This Article is brought to you for free and open access by the Mechanical & Materials Engineering, Department of at DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in Mechanical & Materials Engineering Faculty Publications by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. THULHUILUWUTTURUS009786857B2 (12 ) United States Patent ( 10 ) Patent No. : US 9 ,786 , 857 B2 Huang et al. ( 45 ) Date of Patent : Oct . 10 , 2017 ( 54 ) FLOATING -GATE TRANSISTOR ( 58 ) Field of Classification Search PHOTODETECTOR CPC .. .. .. HO1L 31/ 1136 ; HO1L 51/ 0052 ; HOLL 51/ 428 ; YO2E 10 / 549 (71 ) Applicant : NUtech Ventures, Lincoln , NE (US ) See application file for complete search history . ( 72 ) Inventors : Jinsong Huang , Lincoln , NE (US ) ; ( 56 ) References Cited Yongbo Yuan , Lincoln , NE (US ) U . S . PATENT DOCUMENTS ( 73 ) Assignee : NUtech Ventures, Lincoln , NE (US ) 2007/ 0063304 A1 * 3 / 2007 Matsumoto .. B82Y 10 / 00 257 /462 ( * ) Notice : Subject to any disclaimer, the term of this 2010 /0155707 A1* 6 /2010 Anthopoulos .. B82Y 10 /00 patent is extended or adjusted under 35 257 /40 U . S .C . 154 (b ) by 2 days. 2013/ 0049738 A1 2 /2013 Sargent ( 21 ) Appl. No. : 15 / 091, 201 OTHER PUBLICATIONS ( 22 ) Filed : Apr. 5 , 2016 Agostinelli et al. , “ A polymer / fullerene based photodetector with extremely low dark current for X -ray medical imaging applications, " (65 ) Prior Publication Data Applied Physics Letters, 2008 , 93 (20 ) . Arnold et al. , “ Broad Spectral Response Using Carbon Nanotube / US 2016 / 0285020 A1 Sep . 29 , 2016 Organic Semiconductor / C (60 ) Photodetectors, " NANO Letters , 2009, 9 ( 9 ) : 3354 - 3358 . Related U . S . Application Data ( Continued ) (62 ) Division of application No. 14 / 214 , 513 , filed on Mar. Primary Examiner — Francis M Legasse , Jr . 14 , 2014 , now Pat . No . 9 ,331 , 293 . ( 74 ) Attorney, Agent, or Firm — Fish & Richardson P . C . ( 60 ) Provisional application No . 61/ 783 , 108 , filed on Mar . (57 ) ABSTRACT 14 , 2013 . A field effect transistor photodetector that can operate in (51 ) Int. CI. room temperature includes a source electrode , a drain elec HOIL 31/ 113 (2006 .01 ) trode, a channel to allow an electric current to flow between HOIL 51 /42 ( 2006 . 01 ) the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the HOIL 51 / 00 ( 2006 .01 ) channel. The photodetector includes a light- absorbing mate HOIL 51 / 05 ( 2006 .01 ) rial that absorbs light and traps electric charges . The light HOIL 51/ 44 (2006 . 01 ) absorbing material is configured to generate one or more ( 52 ) U . S . CI. charges upon absorbing light having a wavelength within a CPC . .. .. HOIL 51/ 428 (2013 .01 ) ; HOIL 31/ 1136 specified range and to hold the one or more charges . The one ( 2013 . 01 ) ; HO1L 51 /0052 ( 2013 .01 ) ; HOIL or more charges held in the light- absorbing material reduces 51 /0074 ( 2013 .01 ) ; HOIL 51 /055 ( 2013 .01 ) ; the current flowing through the channel . HOIL 51/ 0545 (2013 . 01 ) ; HOIL 51/ 447 ( 2013. 01 ) ; YO2E 10 /549 ( 2013 .01 ) 8 Claims, 14 Drawing Sheets 100 102 104 Semiconductor Channel 106 SVSot 114 KonoBono 112 Silicon Oxide 108 Silicon US 9 ,786 ,857 B2 Page 2 References Cited Lee et al ., “ High efficiency organic multilayer photodetectors based (56 ) on singlet exciton fission , ” Applied Physics Letters , 2009 , 95 ( 3 ) : 033301 - 1 , 4 pages. Lin et al. , “ Highly efficient visible - blind organic ultraviolet OTHER PUBLICATIONS photodetectors , ” Advanced Materials , 2005 , 17 (20 ) : 2489 . 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Gansen et al. , Photon -number - discriminating detection using a Semenov et al. , “ Intrinsic quantum efficiency and electro - thermal quantum -dot , optically gated , field - effect transistor , Nature Photon model of a superconducting nanowire single -photon detector ," ics , 2007 , 1 ( 10 ) :585 - 588 . Journal of Modern Optics , 2009 , 56 ( 2 - 3 ) : 345 , 8 pages . Gol ’ Tsman et al. , “ Picosecond superconducting single - photon opti Sidhu et al . , “ GaAsSb resonant - cavity enhanced avalanche cal detector ,” Applied Physics Letters, 2001 , 79 ( 6 ) :705 - 707 . photodiode operating at 1 . 06 um , ” Electronics Letters, 2004 , Gong et al. , “ High -detectivity polymer photodetectors with spectral 40 ( 20 ) :220 - 221. response from 300 nm to 1450 nm ,” Science , 2009 , Soci et al . , “ ZnO nanowire UV photodetectors with high internal 325 (5948 ) : 1665 - 1667 . gain ,” NANO Letters, 2007, 7 ( 4 ): 1003 - 1009 . Hertz , “Ueber einen Einfluss des ultravioletten Lichtes auf die Tseng et al . , “ Nanoparticle - induced negative differential resistance electrische Entladung , ” Annalen der Physik , 1987 , 267 ( 8 ) :983 . and memory effect in polymer bistable light- emitting device, " Hiskett et al ., “ Performance and design of InGaAs/ InP photodiodes Applied Physics Letters , 2006 , 88 ( 12 ) : 123506 , 3 pages . for single - photon counting at 1 . 55 um , ” Applied Optics , 2000 , Woodard et al. , “ Photon counting using a large area avalanche 39 ( 36 ) :6818 -6829 . photodiode cooled to 100K ,” Applied Physics Letters, 1994 , Hu et al. , " Superconducting nanowire single - photon detectors inte 64 ( 10 ) : 1177 - 1179 . grated with optical nano - antennae , ” Optics Express , 2011, 19 ( 1 ) : 17 Yao et al. , “ Plastic near - infrared photodetectors utilizing low band 31 . gap polymer ,” Advanced Materials , 2007 , 19 ( 22 ) :3979 - 3983 . Jin et al . , “ Solution - processed ultraviolet photodetectors based on Yuan et al. , " Solution - Processed Nanoparticle Super- Float -Gated colloidal ZnO nanoparticles ,” Nano letters, 2008 , 8 ( 6 ) : 1649 - 1653 . Organic Field - Effect Transistor as Un -cooled Ultraviolet and Infra Kalb et al. , “ Trap density of states in small -molecule organic red Photon Counter ,” Scientific Reports , Sep . 19 , 2013 , 3 : 2707 , 7 semiconductors : a quantitative comparison of thin - film transistors pages. with single crystals, ” Physical Review B , 2010 , 81: 155315 , 13 Zhang et al. , “ Highly efficient photovoltaic diode based organic pages . ultraviolet photodetector and the strong electroluminescence result Kim et al ., “ Multiphoton detection using visible light photon ing from pure exciplex emission , " Organic Electronics, 2009 , counter ,” Applied Physics Letters , 1999 , 74 : 902 - 904 . 10 ( 2 ) :352 - 356 . 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