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EXPERIMENT 4: RC, RL and RD Circuits
Laboratory 4: The RC Circuit EXPERIMENT 4: RC, RL and RD CIRCUITs Equipment List An assortment of resistor, one each of (330, 1k,1.5k, 10k,100k,1000k) Function Generator Oscilloscope 0.F Ceramic Capacitor 100H Inductor LED and 1N4001 Diode. Introduction We have studied D.C. circuits with resistors and batteries and discovered that Ohm’s Law governs the relationship between current through and voltage across a resistance. It is a linear response; i.e., 푉 = 퐼푅 (1) Such circuit elements are called passive elements. With A.C. circuits we find other passive elements called capacitors and inductors. These, too, obey Ohm’s Law and circuit loop problems can be solved using Kirchoff’ 3 Laws in much the same way as with DC. circuits. However, there is one major difference - in an AC. circuit, voltage across and current through a circuit element or branch are not necessarily in phase with one another. We saw an example of this at the end of Experiment 3. In an AC. series circuit the source voltage and current are time dependent such that 푖(푡) = 푖푠sin(휔푡) (2) 푣(푡) = 푣푠sin(휔푡 + 휙) where, in this case, voltage leads current by the phase angle , and Vs and Is are the peak source voltage and peak current, respectively. As you know or will learn from the text, the phase relationships between circuit element voltages and series current are these: resistor - voltage and current are in phase implying that 휙 = 0 휋 capacitor - voltage lags current by 90o implying that 휙 = − 2 inductor - voltage leads current by 90o implying that 휙 = 휋/2 Laboratory 4: The RC Circuit In this experiment we will study a circuit with a resistor and a capacitor in m. -
Chapter 7: AC Transistor Amplifiers
Chapter 7: Transistors, part 2 Chapter 7: AC Transistor Amplifiers The transistor amplifiers that we studied in the last chapter have some serious problems for use in AC signals. Their most serious shortcoming is that there is a “dead region” where small signals do not turn on the transistor. So, if your signal is smaller than 0.6 V, or if it is negative, the transistor does not conduct and the amplifier does not work. Design goals for an AC amplifier Before moving on to making a better AC amplifier, let’s define some useful terms. We define the output range to be the range of possible output voltages. We refer to the maximum and minimum output voltages as the rail voltages and the output swing is the difference between the rail voltages. The input range is the range of input voltages that produce outputs which are not at either rail voltage. Our goal in designing an AC amplifier is to get an input range and output range which is symmetric around zero and ensure that there is not a dead region. To do this we need make sure that the transistor is in conduction for all of our input range. How does this work? We do it by adding an offset voltage to the input to make sure the voltage presented to the transistor’s base with no input signal, the resting or quiescent voltage , is well above ground. In lab 6, the function generator provided the offset, in this chapter we will show how to design an amplifier which provides its own offset. -
Unit-1 Mphycc-7 Ujt
UNIT-1 MPHYCC-7 UJT The Unijunction Transistor or UJT for short, is another solid state three terminal device that can be used in gate pulse, timing circuits and trigger generator applications to switch and control either thyristors and triac’s for AC power control type applications. Like diodes, unijunction transistors are constructed from separate P-type and N-type semiconductor materials forming a single (hence its name Uni-Junction) PN-junction within the main conducting N-type channel of the device. Although the Unijunction Transistor has the name of a transistor, its switching characteristics are very different from those of a conventional bipolar or field effect transistor as it can not be used to amplify a signal but instead is used as a ON-OFF switching transistor. UJT’s have unidirectional conductivity and negative impedance characteristics acting more like a variable voltage divider during breakdown. Like N-channel FET’s, the UJT consists of a single solid piece of N-type semiconductor material forming the main current carrying channel with its two outer connections marked as Base 2 ( B2 ) and Base 1 ( B1 ). The third connection, confusingly marked as the Emitter ( E ) is located along the channel. The emitter terminal is represented by an arrow pointing from the P-type emitter to the N-type base. The Emitter rectifying p-n junction of the unijunction transistor is formed by fusing the P-type material into the N-type silicon channel. However, P-channel UJT’s with an N- type Emitter terminal are also available but these are little used. -
Special Diodes 2113
CHAPTER54 Learning Objectives ➣ Zener Diode SPECIAL ➣ Voltage Regulation ➣ Zener Diode as Peak Clipper DIODES ➣ Meter Protection ➣ Zener Diode as a Reference Element ➣ Tunneling Effect ➣ Tunnel Diode ➣ Tunnel Diode Oscillator ➣ Varactor Diode ➣ PIN Diode ➣ Schottky Diode ➣ Step Recovery Diode ➣ Gunn Diode ➣ IMPATT Diode Ç A major application for zener diodes is voltage regulation in dc power supplies. Zener diode maintains a nearly constant dc voltage under the proper operating conditions. 2112 Electrical Technology 54.1. Zener Diode It is a reverse-biased heavily-doped silicon (or germanium) P-N junction diode which is oper- ated in the breakdown region where current is limited by both external resistance and power dissipa- tion of the diode. Silicon is perferred to Ge because of its higher temperature and current capability. As seen from Art. 52.3, when a diode breaks down, both Zener and avalanche effects are present although usually one or the other predominates depending on the value of reverse voltage. At reverse voltages less than 6 V, Zener effect predominates whereas above 6 V, avalanche effect is predomi- nant. Strictly speaking, the first one should be called Zener diode and the second one as avalanche diode but the general practice is to call both types as Zener diodes. Zener breakdown occurs due to breaking of covalent bonds by the strong electric field set up in the depletion region by the reverse voltage. It produces an extremely large number of electrons and holes which constitute the reverse saturation current (now called Zener current, Iz) whose value is limited only by the external resistance in the circuit. -
KVL Example Resistor Voltage Divider • Consider a Series of Resistors And
KVL Example Resistor Voltage Divider • Consider a series of resistors and a voltage source • Then using KVL V −V1 −V2 = 0 • Since by Ohm’s law V1 = I1R1 V2 = I1R2 • Then V − I1R1 − I1R2 = V − I1()R1 + R2 = 0 • Thus V 5 I1 = = = 1 mA R1 + R2 2000 + 3000 • i.e. get the resistors in series formula Rtotal = R1 + R2 = 5 KΩ KVL Example Resistor Voltage Divider Continued • What is the voltage across each resistor • Now we can relate V1 and V2 to the applied V • With the substitution V I 1 = R1 + R 2 • Thus V1 VR1 5(2000) V1 = I1R1 = = = 2 V R1 + R2 2000 + 3000 • Similarly for the V2 VR2 5(3000) V1 = I1R2 = = = 3V R1 + R2 2000 + 3000 General Resistor Voltage Divider • Consider a long series of resistors and a voltage source • Then using KVL or series resistance get N V V = I1∑ R j KorKI1 = N j=1 ∑ R j j=1 • The general voltage Vk across resistor Rk is VRk Vk = I1Rk = N ∑ R j j=1 • Note important assumption: current is the same in all Rj Usefulness of Resistor Voltage Divider • A voltage divider can generate several voltages from a fixed source • Common circuits (eg IC’s) have one supply voltage • Use voltage dividers to create other values at low cost/complexity • Eg. Need different supply voltages for many transistors • Eg. Common computer outputs 5V (called TTL) • But modern chips (CMOS) are lower voltage (eg. 2.5 or 1.8V) • Quick interface – use a voltage divider on computer output • Gives desired input to the chip Variable Voltage and Resistor Voltage Divider • If have one fixed and one variable resistor (rheostat) • Changing variable resistor controls out Voltage across rheostat • Simple power supplies use this • Warning: ideally no additional loads can be applied. -
Three-Dimensional Integrated Circuit Design: EDA, Design And
Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change. -
Ohm's Law and Kirchhoff's Laws
CHAPTER 2 Basic Laws Here we explore two fundamental laws that govern electric circuits (Ohm's law and Kirchhoff's laws) and discuss some techniques commonly applied in circuit design and analysis. 2.1. Ohm's Law Ohm's law shows a relationship between voltage and current of a resis- tive element such as conducting wire or light bulb. 2.1.1. Ohm's Law: The voltage v across a resistor is directly propor- tional to the current i flowing through the resistor. v = iR; where R = resistance of the resistor, denoting its ability to resist the flow of electric current. The resistance is measured in ohms (Ω). • To apply Ohm's law, the direction of current i and the polarity of voltage v must conform with the passive sign convention. This im- plies that current flows from a higher potential to a lower potential 15 16 2. BASIC LAWS in order for v = iR. If current flows from a lower potential to a higher potential, v = −iR. l i + v R – Material with Cross-sectional resistivity r area A 2.1.2. The resistance R of a cylindrical conductor of cross-sectional area A, length L, and conductivity σ is given by L R = : σA Alternatively, L R = ρ A where ρ is known as the resistivity of the material in ohm-meters. Good conductors, such as copper and aluminum, have low resistivities, while insulators, such as mica and paper, have high resistivities. 2.1.3. Remarks: (a) R = v=i (b) Conductance : 1 i G = = R v 1 2 The unit of G is the mho (f) or siemens (S) 1Yes, this is NOT a typo! It was derived from spelling ohm backwards. -
Thyristors.Pdf
THYRISTORS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Thyristors Thyristors are a class of semiconductor devices characterized by 4-layers of alternating p and n material. Four-layer devices act as either open or closed switches; for this reason, they are most frequently used in control applications. Some thyristors and their symbols are (a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The 4-layer diode (or Shockley diode) is a type of thyristor that acts something like an ordinary diode but conducts in the forward direction only after a certain anode to cathode voltage called the forward-breakover voltage is reached. The basic construction of a 4-layer diode and its schematic symbol are shown The 4-layer diode has two leads, labeled the anode (A) and the Anode (A) A cathode (K). p 1 n The symbol reminds you that it acts 2 p like a diode. It does not conduct 3 when it is reverse-biased. n Cathode (K) K Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The concept of 4-layer devices is usually shown as an equivalent circuit of a pnp and an npn transistor. Ideally, these devices would not conduct, but when forward biased, if there is sufficient leakage current in the upper pnp device, it can act as base current to the lower npn device causing it to conduct and bringing both transistors into saturation. -
Negative Capacitance in a Ferroelectric Capacitor
Negative Capacitance in a Ferroelectric Capacitor Asif Islam Khan1, Korok Chatterjee1, Brian Wang1, Steven Drapcho2, Long You1, Claudy Serrao1, Saidur Rahman Bakaul1, Ramamoorthy Ramesh2,3,4, Sayeef Salahuddin1,4* 1 Dept. of Electrical Engineering and Computer Sciences, University of California, Berkeley 2 Dept. of Physics, University of California, Berkeley 3 Dept. of Material Science and Engineering, University of California, Berkeley 4 Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, *To whom correspondence should be addressed; E-mail: [email protected] The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny1-5. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive1-3. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time–in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this ‘inductance’-like behavior from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications. 1 Owing to the energy barrier that forms during phase transition and separates the two degenerate polarization states, a ferroelectric material could show negative differential capacitance while in non-equilibrium1-5. The state of negative capacitance is unstable, but just as a series resistance can stabilize the negative differential resistance of an Esaki diode, it is also possible to stabilize a ferroelectric in the negative differential capacitance state by placing a series dielectric capacitor 1-3. -
PIN Diode Drivers Literature Number: SNVA531
PIN Diode Drivers Literature Number: SNVA531 PIN Diode Drivers National Semiconductor PIN Diode Drivers Application Note 49 March 1986 INTRODUCTION The charge control model of a diode1,2 leads to the charge The DH0035/DH0035C is a TTL/DTL compatible, DC continuity equation given in Equation (1). coupled, high speed PIN diode driver. It is capable of deliver- ing peak currents in excess of one ampere at speeds up to 10 MHz. This article demonstrates how the DH0035 may be (1) applied to driving PIN diodes and comparable loads which = require high peak currents at high repetition rates. The sa- where: Q charge due excess minority carriers lient characteristics of the device are summarized in Table 1. τ = mean lifetime of the minority carriers Equation (1) implies a circuit model shown in Figure 2. Under TABLE 1. DH0035 Characteristics steady conditions hence: Parameter Conditions Value Differential Supply 30V Max. (2) Voltage (V+ −V−) where: I = steady state “ON” current. Output Current 1000 mA Maximum Power 1.5W tdelay PRF = 5.0 MHz 10 ns + − trise V −V =20V 15 ns 10% to 90% + − tfall V −V =20V 10 ns 90% to 10% PIN DIODE SWITCHING REQUIREMENTS Figure 1 shows a simplified schematic of a PIN diode switch. AN008750-2 Typically, the PIN diode is used in RF through microwave fre- I = Total Current quency modulators and switches. Since the diode is in shunt IDC = SS Control Current with the RF path, the RF signal is attenuated when the diode iRF = RF Signal Current is forward biased (“ON”), and is passed unattenuated when FIGURE 2. -
Driver Circuit for High-Power PIN Diode Switches
APPLICATION NOTE Driver Circuit for High-Power PIN Diode Switches Introduction The Skyworks High-Power Pin Diode Switch Driver Circuit is a TTL/DTL compatible, DC coupled, high-speed PIN diode bias controller. Part No. EN33-X273 This driver reference design is designed to operate with the Skyworks series of high-power SPDT PIN diode switches. These include: SKY12207-306LF SKY12207-478LF SKY12208-306LF SKY12208-478LF SKY12209-478LF SKY12210-478LF SKY12211-478LF SKY12212-478LF SKY12213-478LF SKY12215-478LF Features High drive current capability (± 50 mA to ± 100 mA) This driver is designed to provide forward currents up to 100 mA 28 V back bias in off state for each diode, and 28 V reverse bias. It is designed for SPDT switches operating with a CW input a power up to 100 W. The Fast switching speed approximately 142 nS driver utilizes fast switching NPN transistors and Skyworks Low current consumption discrete PIN diodes. The driver is designed to utilize a VDD set to Single TTL logic input +28 V, but could operate with voltages as low as +5 V. Skyworks GreenTM products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of GreenTM, document number SQ04–0074. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 203950A • Skyworks Proprietary and Confidential Information • Products and Product Information are Subject to Change Without Notice. • March 28, 2016 1 APPLICATION NOTE • DRIVER CIRCUIT FOR HIGH-POWER PIN DIODE SWITCHES Table 1. Absolute Maximum Ratings1 Parameter Conditions ANT (+5 V) –0.5 V to 7 V RXTX (+28 V) –0.5 V to 40 V VLGC –0.5 V to 7 V RX drive current 150 mA TX drive current 150 mA Operational temperature –40 to +85°C Storage temperature –55 to +125°C 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. -
Very High Frequency Integrated POL for Cpus
Very High Frequency Integrated POL for CPUs Dongbin Hou Dissertation submitted to the Faculty of the Virginia Polytechnic Institute and State University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Electrical Engineering Fred C. Lee, Chair Qiang Li Rolando Burgos Daniel J. Stilwell Dwight D. Viehland March 23rd, 2017 Blacksburg, Virginia Keywords: Point-of-load converter, integrated voltage regulator, very high frequency, 3D integration, ultra-low profile inductor, magnetic characterizations, core loss measurement © 2017, Dongbin Hou Dongbin Hou Very High Frequency Integrated POL for CPUs Dongbin Hou Abstract Point-of-load (POL) converters are used extensively in IT products. Every piece of the integrated circuit (IC) is powered by a point-of-load (POL) converter, where the proximity of the power supply to the load is very critical in terms of transient performance and efficiency. A compact POL converter with high power density is desired because of current trends toward reducing the size and increasing functionalities of all forms of IT products and portable electronics. To improve the power density, a 3D integrated POL module has been successfully demonstrated at the Center for Power Electronic Systems (CPES) at Virginia Tech. While some challenges still need to be addressed, this research begins by improving the 3D integrated POL module with a reduced DCR for higher efficiency, the vertical module design for a smaller footprint occupation, and the hybrid core structure for non-linear inductance control. Moreover, as an important category of the POL converter, the voltage regulator (VR) serves an important role in powering processors in today’s electronics.