US 20040245547A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2004/0245547 A1 Stipe (43) Pub. Date: Dec. 9, 2004
(54) ULTRA LOW-COST SOLID-STATE MEMORY Publication Classi?cation
(75) Inventor; Barry Cushing Stipe, San Jose, CA (51) Int. Cl.7 ...... H01L 31/109 (Us) (52) US. Cl...... 257/200
Correspondence Address: (57) ABSTRACT
JOSEPH P. CURTIN . . . . A three-dimensional solid-state memory is formed from a plurality of bit lines, a plurality of layers, a plurality of tree ’ structures and a plurality of plate lines. Bit lines extend in a (73) A551 nee, Hitachi Global Stora e Technolo ies ?rst direction in a ?rst plane. Each layer includes an array of g ' B V AZ Amsterdam g memory cells, such as ferroelectric or hysteretic-resistor ' " memory cells. Each tree structure corresponds to a bit line, (21) APPL NO: 10/751 740 has a trunk portion and at least one branch portion. The trunk ’ portion of each tree structure extends from a corresponding (22) Filed; Jam 5, 2004 bit line, and each tree structure corresponds to a plurality of layers. Each branch portion corresponds to at least one layer Related US, Application Data and extends from the trunk portion of a tree structure. Plate lines correspond to at least one layer and overlap the branch (63) Continuation-in-part of application No. 10/453,137, portion of each tree structure in at least one roW of tree ?led on Jun. 3, 2003, noW abandoned. structures at a plurality of intersection regions.
SRIIIIII DRAM HIIIJ FLASH PROBE GUM MTJ-MRAM 3D-MHAM MATRIX ITFBRIIM GT FERAM 001 size 50F? 012 512 502 502 5F? 002 5e? 512 002 502 Minimum "1" 100m 300m 100m 30 0m 311m 100m 40 nm 400m 10 nm 100m 100m MEX. IJIIS/CEII 1 1 1 4 I 2 I 1 1 1 1 Max. layers 1 1 1 1 1 4 1 12 12 1 16 Mam/m 0000/0 0110/01? 001 10/102 110/102 04 10/102 100/102 010/102 004 10/102 0.15 10/012 12 10/012 0010/02 1010/02 0051/3186 (AU) 10 10 1 10 10 16 10 16 16 I0 16 Min. COSI/IJiI/IIII) 1G0 140 1 22 1 2 250 20 1.3 15 1 Retention withpower (11sec > 10 yrs > 10 yrs > 10 yrs > 10 yrs > 10 yrs > 10 yrs > 10 yrs > 10 yrs > 10 yrs Endurance > 1015 > 1015 >1012 >106 >105 > 1013 > 1015 > 1015 1 > 1014 > 1014 Byte access Yes Yes N0 N0 No Yes Yes Yes Yes Yes N0 Min. read time 0.20s Ins 1050s 50s 1060s 511s 111s 1040s 1040s 10s 50s Min. 00100010 0.20s 1115 1050s 1060s 1060s 500s Ins 104/15 104,15 10s 1011s WIIIB energy/bi! LOW-HIGH HIGH VERYHIGH VERY HIGH VERY HIGH HIGH MED-HIGH MED-HIGH HIGH LOW LOW Revenue (2002) $481000 1178111100 $20 Billion $881000 DEY DEY DEY RES. DEV $0.1 Billion RES. Patent Application Publication Dec. 9, 2004 Sheet 1 0f 19 US 2004/0245547 A1
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