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High Performance Cnt Based Nanoelectronic Circuits An International Journal of Advanced Research in Engineering and Technology (IJARET) Volume 11, Issue 8, August 2020, pp. 110-121, Article ID: IJARET_11_08_012 Available online at http://iaeme.com/Home/issue/IJARET?Volume=11&Issue=8 ISSN Print: 0976-6480 and ISSN Online: 0976-6499 DOI: 10.34218/IJARET.11.8.2020.012 © IAEME Publication Scopus Indexed HIGH PERFORMANCE CNT BASED NANOELECTRONIC CIRCUITS: AN ANALYSIS S. Bashiruddin Horned Coot Research in Aesthetic Decors Pvt Ltd, New Delhi, India ABSTRACT Carbon Nano Tubes (CNTs) with their unique electronic and geometric features have emerged as candidates in next generation high-performance nano-electronics application. CNTs have played a significant role in overcoming the challenges of scaling process of traditional silicon/conventional MOS based devices and therefore, carbon nanotube field effect transistor (CNTFET) based circuit development has been boosted in recent years. The present review encompasses inquisitive assessment of CNTs and its application in designing of CNTFET based circuits in nano-electronics. Recently reported CNTFET based nanoelectronic circuits like three stage operational amplifiers (OP AMP), novel operational trans-conductance amplifier (OTA), universal logic circuits, tristate buffer, Cascode Operational Transconductance Amplifiers (COTA), folded cascode operational transconductance amplifiers (FC- OTAs), Ternary Full Adder Cell and pure CNT based multistage operational amplifier, as well as improvement in their performance parameters (DC gain, output resistance, slew rate, average power, speed and power consumption) as compared to respective MOS based circuits have been extensively reviewed. In order to harness the high quality intrinsic features of CNTs further investigations of nanotube-based- electronics are anticipated and considered as future perspective beyond silicon-based- electronics. Key words: CNTFET, CNT, OTA, OP AMP, CMOS. Cite this Article: S. Bashiruddin, High Performance CNT based Nanoelectronic Circuits: An Analysis, International Journal of Advanced Research in Engineering and Technology, 11(8), 2020, pp. 110-121. http://iaeme.com/Home/issue/IJARET?Volume=11&Issue=8 1. INTRODUCTION In recent years, MOS technology has withered from several microns to nanometer scale following the scaling trend demonstrated by Moore’s law [1, 2]. In the discipline of Nano electronics, with decrease in channel length of device at level of sub-10 nm era, short channel effects, and direct tunnelling between source and drain pose various challenges which deteriorate the device reliability [3]. As the MOSFET scaling looming its supreme limit hence there is an immediate quest for highly efficient devices and materials to outperform Silicon MOS in order to keep the miniaturization enhancement in trend [4]. Recently, the researchers http://iaeme.com/Home/journal/IJARET 110 [email protected] High Performance CNT based Nanoelectronic Circuits: An Analysis interest is to cease the opportunity of superior properties of CNT based FETs to replace Silicon FETs, much progress has been made in recent years showing that CNT FETs can outperform silicon MOSFETs in many ways. CNTFETs have the potential to spur all the limits of silicon FETs such as exponential rise of leakage currents in scaled devices [5]. CNTFETs and MOSFETs are different at the level of channel material, In CNTFETs formation of channel is realized by using semiconducting SWCNT whereas in MOSFETS silicon is used as channel material between the drain and source [6, 7]. The schematic view of CNTFET is shown in (Fig. 1). The source and drain are the heavily doped regions while CNT channel is undoped. The number of CNTs in the channel is an important parameter, as it has a significant impact on the overall performance of the device, particularly on the drive current. The working of a CNTFET is similar to the conventional MOSFET. The gate voltage turns the device ON and OFF and is capacitive coupled with the channel. The CV/I performance of an intrinsic CNTFET was noticed to be 13 times better as compared to conventional MOSFET [8]. CNTFET which uses CNT as a channel material enables high mobility, large transconductance and very low power consumption due to the presence of 1D ballistic electron transport i.e. no electron scattering in CNTs [8, 9]. Precisely, even at very high frequencies good operation can be obtained with CNTs [10, 11]. Figure 1 Schematic of a CNTFET 2. ASSESSMENT OF CNTS Carbon Nano Tubes (CNTs) a fascinating new class of materials was first observed by Endo in (1975) and later discovered by Sumio Iijima of NEC, Japan in 1991 [12]. CNTs can be visualized as Graphene sheet rolled up in the shape of a cylinder of few nanometre in diameter [12, 13]. Diameters of CNTs typically ranges from 1 to 100 nm and lengths can be of millimetres, or even centimetres range [13, 14]. Graphene is a single atomic layer of hexagonal arrangement of carbon atoms, known as honeycomb lattice [15]. CNTs are categorized in two types: Single-walled carbon nanotubes (SWCNTs) and Multiple-walled carbon nanotubes (MWCNTs). SWCNT - Structure and morphology: The SWCNTs are generally narrower than the multi- walled tubes, with diameters typically in the range 1-2 nm, and tend to be curved rather than straight (Fig. 2). SWCNTs usually contain only 10 atoms around the circumference and the thickness of the tube is only one-atom thick [16]. In general, SWCNTs electronic properties vary from metallic to semiconducting [16, 17] while MWCNTs are observed as metallic [15]. http://iaeme.com/Home/journal/IJARET 111 [email protected] S. Bashiruddin Figure 2 Single Wall CNT MWCNT- Structure and morphology: MWCNT is restricted to nanostructures with outer diameter of less than 15 nm [16]. In MWCNT, many tubes are arranged in a coaxial fashion to form concentric cylinders (Fig. 3) [18]. Each nanotube is a single molecule composed of millions of atoms and the length of this molecule can be tens of micrometres long with diameters as small as 0.7 nm [16, 19]. Figure 3 Multi wall CNT A substantial amount of work has been done in the past decade to unravel the electrical, mechanical and chemical properties of CNTs. Usually Nanotubes have huge aspect ratio (length-to-diameter ratio) of about 1000, subsequently considered as nearly one-dimensional configuration [20, 21]. The electrical properties of CNTs depend on their geometrical structure which is determined by chiral vector [22, 23]. CNTs may behave as metallic or semi-conducting depending on their indices (n, m) and bandgaps that scale inversely with their diameter [15, 16]. Based on chirality vector and chiral angle (θ), SWCNTs can be of 3 types, i.e. arm chair type if (n = m, φ = 0°), zig zag type if (n, m = 0, φ = 30°), and chiral type if (n ≠ m ≠0 and θ lies between 0o and 30o) [24, 25]. particularly, Armchair (n=m) are always metallic whereas zigzag and chiral can be either metallic or semiconducting depends on value of n, m if n = m or n – m = 3i (where i is an integer), the nanotube shows metallic behaviour otherwise semiconducting [6, 23]. It has been shown experimentally that CNT conducts with no electron scattering also there is no heat dissipation owing to their ballistic electron transport and Quasi 1-D nature [15, 26]. The inimitable characteristics of CNTs http://iaeme.com/Home/journal/IJARET 112 [email protected] High Performance CNT based Nanoelectronic Circuits: An Analysis keep attracting the researches to explore and use them in the field of electronics, biomedical, materials science, energy management and many other fields [15, 23]. Semiconducting CNTs find their use in the formation of CNTFET [9], transistors [23, 27, 28], sensors [29], diodes [30, 31] 3. CNT-BASED INVESTIGATION COMPENDIA A simulation and designed study was undertaken by Loan et al in order to propose a CNT based novel operational trans-conductance amplifier (OTA) which encashes the advantages associated with CNTFET. In this investigation multifactorial performance of two types of newly designed CNT based OTAs were compared with that of CMOS based OTA. N CNT- PMOS-OTA and P CNT-NMOS-OTA transistors were used to realise the OTA. CNT based OTAs were observed to be with augmented performance as compared to conventional CMOS-OTA. Increase in DC gain by 44.4% and 69.3 % while decrease in average power by 24.18 % and 14.98 % in PCNT-NMOS OTA and NCNT-PMOS OTA respectively as compared to those in CMOS-OTA in this investigation. The circuit diagram of proposed PMOS NCNT OTA is shown in (Fig. 4) [32]. Figure 4 PMOS-NCNT-OTA [32] A simulation and designed study was accomplished by Shakir et al in order to propose a CNTFET based tristate buffer (Fig.5a) and a 2X1 Multiplexer using the proposed tristate buffer. It was investigated that the edges of the waveform were sharper, also it contains less spikes and glitches (Fig. 5b). Thus, output was more similar to input wave form. The proposed tristate buffer was also found faster and less power consuming as compared to convention MOS tristate Buffer [33]. Figure 5a- CNTFET based Tristate Buffer (for active low) http://iaeme.com/Home/journal/IJARET 113 [email protected] S. Bashiruddin Figure 5b- CNTFET Based Tristate Buffer Output A simulation and designed study was demonstrated by Loan et al in order to propose a CNTFET based cascode operational transconductance amplifiers (COTAs). In this investigation of two types of newly designed CNT based COTAs multifactorial performance were compared with that of conventional CMOS OTA. NCNT-PMOS COTA and the other PCNT-NMOS COTA were designed based on 45 nm technology node using HSPICE. Considerable augmentation in parameters like DC gain, bandwidth, power reduction, output resistance is achieved in the proposed COTAs. Further, it has been found that optimizing the number of CNTs in the CNTFETs used for designing COTAs will further optimize the performance of COTAs.
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