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Bipolar/JFET, Audio Operational Amplifier OP176*

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Bipolar/JFET, Audio Operational Amplifier OP176* Bipolar/JFET, a Audio Operational Amplifier OP176* FEATURES PIN CONNECTIONS Low Noise: 6 nV/√Hz High Slew Rate: 25 V/µs 8-Lead Narrow-Body SO 8-Lead Epoxy DIP Wide Bandwidth: 10 MHz (S Suffix) (P Suffix) Low Supply Current: 2.5 mA Low Offset Voltage: 1 mV Unity Gain Stable NULL 1 8NC NULL 1 OP176 8NC –IN 2 7V+ SO-8 Package OP176 –IN 2 7V+ +IN 3 6OUT +IN 3 6OUT APPLICATIONS V– 45NULL V– NULL Line Driver 45OP-482 Active Filters Fast Amplifiers Integrators 200 µV. This allows the OP176 to be used in many dc coupled or summing applications without the need for special selections GENERAL DESCRIPTION or the added noise of additional offset adjustment circuitry. The OP176 is a low noise, high output drive op amp that The output is capable of driving 600 Ω loads to 10 V rms while features the Butler Amplifier front-end. This new front-end maintaining low distortion. THD + Noise at 3 V rms is a low OBSOLETEdesign combines both bipolar and JFET transistors to attain 0.0006%. amplifiers with the accuracy and low noise performance of The OP176 is specified over the extended industrial (–40°C to bipolar transistors, and the speed and sound quality of JFETs. +85°C) temperature range. OP176s are available in both plastic Total Harmonic Distortion plus Noise equals previous audio DIP and SO-8 packages. SO-8 packages are available in 2500 amplifiers, but at much lower supply currents. piece reels. Many audio amplifiers are not offered in SO-8 Improved dc performance is also provided with bias and offset surface mount packages for a variety of reasons, however, the currents greatly reduced over purely bipolar designs. Input OP176 was designed so that it would offer full performance in offset voltage is guaranteed at 1 mV and is typically less than surface mount packaging. *Protected by U.S. Patent No. 5101126. 7 RB4 RB6 RB5 RB7 RB2 RB3 QB5 QB6 QB4 QB7 CB1 QB3 R4 J1 J2 Q10 Q1 Z2 Q2 2 3 QS1 Q9 RS1 R5 6 JB1 CCB RS2 CC2 QB2 Q6 Q5 QS2 Q4 QS3 Q3 Q8 Q11 RB1 CF R3 Q7 R1L R1P1 R2P1 R2L QB8 QB9 QB1 Z1 CC1 R1A R1P2 R1S R2S R2P2 R2A 1 5 4 Simplified Schematic REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A. otherwise under any patent or patent rights of Analog Devices. Tel: 617/329-4700 Fax: 617/326-8703 OP176–SPECIFICATIONS ± ° ELECTRICAL CHARACTERISTICS (@ VS = 15.0 V, TA = +25 C unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units INPUT CHARACTERISTICS Offset Voltage VOS 1mV ° ≤ ≤ ° Offset Voltage VOS –40 C TA +85 C 1.25 mV Input Bias Current IB VCM = 0 V 350 nA ° ≤ ≤ ° VCM = 0 V, –40 C TA +85 C 400 nA ± Input Offset Current IOS VCM = 0 V 50 nA ° ≤ ≤ ° ± VCM = 0 V, –40 C TA +85 C 100 nA Input Voltage Range VCM –10.5 +10.5 V ± Common-Mode Rejection CMRR VCM = 10.5 V, ° ≤ ≤ ° –40 C TA +85 C 80 106 dB Ω Large Signal Voltage Gain AVO RL = 2 k 250 V/mV Ω ° ≤ ≤ ° RL = 2 k , –40 C TA +85 C 175 V/mV Ω RL = 600 200 V/mV ∆ ∆ µ° Offset Voltage Drift VOS/ T5V/ C OUTPUT CHARACTERISTICS Ω ° ≤ ≤ ° Output Voltage Swing VO RL = 2 k , –40 C TA +85 C –13.5 +13.5 V Ω ± RL = 600 , VS = 18 V –14.8 +14.8 V Output Short Circuit Current I ±25 ±50 mA OBSOLETESC POWER SUPPLY ± ± Power Supply Rejection Ratio PSRR VS = 4.5 V to 18 V 86 108 dB ° ≤ ≤ ° –40 C TA +85 C80dB ± ± Supply Current ISY VS = 4.5 V to 18 V, VO = 0 V, ∞ ° ≤ ≤ ° RL = , –40 C TA +85 C 2.5 mA ± ∞ Supply Current ISY VS = 22 V, VO = 0 V, RL = , ° ≤ ≤ ° –40 C TA +85 C 2.75 mA ± ± Supply Voltage Range VS 4.5 22 V DYNAMIC PERFORMANCE Ω µ Slew Rate SR RL = 2 k 15 25 V/ s Gain Bandwidth Product GBP 10 MHz AUDIO PERFORMANCE THD + Noise VIN = 3 V rms, Ω RL = 2 k , f = 1 kHz 0.001 % √ Voltage Noise Density en f = 1 kHz 6 nV/ Hz √ Current Noise Density in f = 1 kHz 0.5 pA/ Hz Specifications subject to change without notice. –2– REV. 0 OP176 ± ° WAFER TEST LIMITS (@ VS = 15.0 V, TA = +25 C unless otherwise noted) Parameter Symbol Conditions Limit Units Offset Voltage VOS 1 mV max Input Bias Current IB VCM = 0 V 350 nA max ± Input Offset Current IOS VCM = 0 V 50 nA max 1 ± Input Voltage Range VCM 10.5 V min ± Common-Mode Rejection CMRR VCM = 10.5 V 80 dB min Power Supply Rejection Ratio PSRR V = ±4.5 V to ±18 V 86 dB min Ω Large Signal Voltage Gain AVO RL = 2 k 250 V/mV min Ω Output Voltage Range VO RL = 2 k 13.5 V min ± Ω VS = 18.0 V, RL = 600 14.8 V min ± ∞ Supply Current ISY VS = 22.0 V, VO = 0 V, RL = 2.75 mA max ± ± VS = 4.5 V to 18 V, 2.5 mA max ∞ VO = 0 V, RL = NOTES Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. 1Guaranteed by CMR test. ABSOLUTE MAXIMUM RATINGS1 DICE CHARACTERISTICS Supply Voltage . ±22 V Input Voltage2. ±18 V NULL OBSOLETE2 ± V+ OUT Differential Input Voltage . 7.5 V Output Short-Circuit Duration to GND . Indefinite Storage Temperature Range P, S Package . .–65°C to +150°C Operating Temperature Range OP176G . .–40°C to +85°C Junction Temperature Range P, S Package . .–65°C to +150°C Lead Temperature Range (Soldering, 60 sec) . +300°C V– θ 3 θ NULL Package Type JA JC Units –IN +IN 8-Pin Plastic DIP (P) 103 43 °C/W ° 8-Pin SOIC (S) 158 43 C/W OP176 Die Size 0.069 × 0.067 Inch, 4,623 Sq. Mils. NOTES Substrate (Die Backside) Is Connected to V–. 1Absolute maximum ratings apply to both DICE and packaged parts, unless Transistor Count, 26. otherwise noted. 2For input voltages greater than ±7.5 V limit input current to less than 5 mA. 3θ θ JA is specified for the worst case conditions, i.e., JA is specified for device in socket θ for P-DIP packages; JA is specified for device soldered in circuit board for SOIC package. ORDERING GUIDE Model Temperature Range Package Description Package Option OP176GP –40°C to +85°C 8-Pin Plastic DIP N-8 OP176GS –40°C to +85°C 8-Pin SOIC SO-8 OP176GSR –40°C to +85°C SO-8 Reel, 2500 Pieces OP176GBC +25°C DICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. WARNING! Although the OP176 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ESD SENSITIVE DEVICE REV. 0 –3– OP176–Typical Characteristics 120 30 ±V = ±15V ±V = ±15V S 100 S 25 Ω ≤–40°C ≤ T ≤ +85°C T = +25°C AAAAAAAAA A R = 2k L 80AAAAAAAA 20 BASED ON 300 OP AMPS 60AAAAAAAA 15 40AAAAAAAA 10 20AAAAAAAA SWING – Volts MAXIMUM OUTPUT 5 0 0 AAAAAAAA0 1 2364 5 7 8 1k 10k100k 1M 10M µt V – µV/°C FREQUENCY – Hz COS Figure 1. Input Offset Voltage Drift Distribution @ ±15 V Figure 4. Maximum Output Swing vs. Frequency 16 16 V = ±15V Ω ± Ω S VS = 18V, +VOM, RL = 600 14 TA = +25°C Ω ± Ω VS = 18V, –VOM , RL = 600 POSITIVE SWING 15 12 OBSOLETE10 NEGATIVE SWING ΩV = ±15V, +V , R = 2kΩ 14 S OM L 8 Ω ± Ω 6 VS = 15V, –VOM , RL = 2k Ω ± Ω SWING – Volts OUTPUT 13 VS = 15V, +VOM, RL = 600 4 ΩV = ±15V, –V , R = 600Ω ABSOLUTE OUTPUT VOLTAGE – V OUTPUT VOLTAGE ABSOLUTE S OM L 2 12 0 –50 –25 0 25 50 75 100 10 1001k 10k Ω Ω TEMPERATURE – °C LOAD RESISTANCE – Figure 2. Output Swing vs. Temperature Figure 5. Maximum Output Swing vs. Load Resistance 300 2.50 ±V = ±15V S V = 0V 250 CM 2.25 200 T = +85°C A 150 2.00 T = +25°C A 100 SUPPLY CURRENT – mA SUPPLY CURRENT 1.75 INPUT BIAS CURRENT – nA INPUT BIAS T = –40°C 50 A 0 1.50 –50 –25 0 25 50 75 100 0 ±5± ±10± ±15± ±20± ±25± TEMPERATURE – °C SUPPLY VOLTAGE – V Figure 3. Input Bias Current vs. Temperature Figure 6. Supply Current per Amplifier vs. Supply Voltage –4– REV. 0 OP176 80 120 T = +25°C ±V = ±15V A 70 S +PSRR ±V = ±15V 100 S SINK 60 80 50 SOURCE 40 60 –PSRR 30 40 20 POWER SUPPLY REJECTION – dB REJECTION – dB POWER SUPPLY 20 ABSOLUTE OUTPUT CURRENT – mA ABSOLUTE OUTPUT 10 0 0 –50 –25 0 25 50 75 100 100 1k10k 100k 1M TEMPERATURE – °C FREQUENCY – Hz Figure 7.
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