High Precision Frequency Synthesizer Based on Mems Piezoresistive Resonator
T1D.005 HIGH PRECISION FREQUENCY SYNTHESIZER BASED ON MEMS PIEZORESISTIVE RESONATOR K.L. Phan1, T. van Ansem1, C. van der Avoort1, J.T.M. van Beek1, M.J. Goossens1, S. Jose2, R.J.P. Lander3, S. Menten1, T. Naass1, J. Sistermans2, E. Stikvoort1, F. Swartjes2, K. Wortel1, and M.A.A. in 't Zandt1 1Research & Development - NXP Semiconductors, Eindhoven, the NETHERLANDS 2Operations, NXP Semiconductors, Nijmegen, the NETHERLANDS 3Research & Development - NXP Semiconductors, Leuven, BELGIUM ABSTRACT middle of the structure. The heads of the dog-bone face In this paper, we present a detailed description of a two electrodes called the gate, over small gaps (g) of MEMS frequency synthesizer product, including the 200nm. The resonator is actuated electrostatically by a principle, processing, system architecture, and reliability combination of a DC voltage (VDC) and an AC voltage and characterization results. The synthesizer is based on a (vin) applied on the gate (Figure 1, right), which drives the MEMS piezoresistive dog-bone shaped resonator, having resonator into the extensional symmetrical resonance a resonant frequency of 56MHz, and a Q-factor of mode shape. To sense the vibration, a DC bias current >40,000. Using a specific temperature compensation (Id) is sent though the beams via the anchors, which are algorithm, the output frequency can be kept stable within also called the source and drain terminals. Thanks to the ±20ppm over an operating temperature from -20°C to piezoresistance effect, resistance of the beams is +85°C. Jitter over a bandwidth from 12kHz to 20MHz is modulated by their strain, which results in an AC signal typically 2.96ps.
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